JPS63224214A - Molecular beam epitaxy device - Google Patents

Molecular beam epitaxy device

Info

Publication number
JPS63224214A
JPS63224214A JP5658687A JP5658687A JPS63224214A JP S63224214 A JPS63224214 A JP S63224214A JP 5658687 A JP5658687 A JP 5658687A JP 5658687 A JP5658687 A JP 5658687A JP S63224214 A JPS63224214 A JP S63224214A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
pump
trap
shroud
heaters
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5658687A
Inventor
Naoyuki Tamura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To make it possible to decompose the deposit adhered to a shroud by heating it up and it is introduced into an evacuation system having a cold trap.
CONSTITUTION: A crystal growth chamber 1 is connected to a turbo pump 14, a cold trap 16, a foreline trap 18 and a roughing vacuum pump 17 through the intermediary of a gate valve 15. The crystal growing chamber 1 is heated up to the temperature necessary for edgussing by baking by applying a current to heaters 12 and 13 in the state wherein the crystal growth chamber 1 is evacuated, and a current is applied to heaters 8W10. When a shroud 6 or 7 is heated up, the adhered matter is scattered by thermal decomposition, and lastly, it is streamed to an exhaust system together with other gas. As a turbo molecular pump is used as a evacuation pump, said matter is not stored in the pump, it is exhausted from the pump, and as the trap which in sufficiently cooled by the refrigerant such as liquid nitrogen is arranged, the deposit is readhered to the cooled surface of the trap and recovered.
COPYRIGHT: (C)1988,JPO&Japio
JP5658687A 1987-03-13 1987-03-13 Molecular beam epitaxy device Pending JPS63224214A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5658687A JPS63224214A (en) 1987-03-13 1987-03-13 Molecular beam epitaxy device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5658687A JPS63224214A (en) 1987-03-13 1987-03-13 Molecular beam epitaxy device

Publications (1)

Publication Number Publication Date
JPS63224214A true true JPS63224214A (en) 1988-09-19

Family

ID=13031283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5658687A Pending JPS63224214A (en) 1987-03-13 1987-03-13 Molecular beam epitaxy device

Country Status (1)

Country Link
JP (1) JPS63224214A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0806499A1 (en) * 1996-05-09 1997-11-12 Sharp Kabushiki Kaisha Method and apparatus for fabricating semiconductor
US7695700B2 (en) 1996-12-31 2010-04-13 Applied Materials, Inc. Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0806499A1 (en) * 1996-05-09 1997-11-12 Sharp Kabushiki Kaisha Method and apparatus for fabricating semiconductor
US6206969B1 (en) 1996-05-09 2001-03-27 Sharp Kabushiki Kaisha Method and apparatus for fabricating semiconductor
US7695700B2 (en) 1996-12-31 2010-04-13 Applied Materials, Inc. Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases

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