JPH07122406A - Chip-shaped fuse resistor and manufacture thereof - Google Patents
Chip-shaped fuse resistor and manufacture thereofInfo
- Publication number
- JPH07122406A JPH07122406A JP5287742A JP28774293A JPH07122406A JP H07122406 A JPH07122406 A JP H07122406A JP 5287742 A JP5287742 A JP 5287742A JP 28774293 A JP28774293 A JP 28774293A JP H07122406 A JPH07122406 A JP H07122406A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- chip
- metal film
- electrodes
- film resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/048—Fuse resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
- H01H85/0411—Miniature fuses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/46—Circuit arrangements not adapted to a particular application of the protective device
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、絶縁基板上に抵抗体
を設けてヒューズを形成したチップ状ヒューズ抵抗器と
その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip fuse resistor in which a resistor is provided on an insulating substrate to form a fuse, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来の表面実装型のヒューズ抵抗器は、
例えば特開平２−４３７０１号公報に開示されているよ
うに、薄い平板状の基板の表面に、複数の抵抗皮膜を無
電解メッキにより形成し、その上に電極を形成し、さら
に端面電極を形成する等の工程を経て、その基板を各抵
抗体毎に分割して、個々のチップ状ヒューズ抵抗器を形
成していた。2. Description of the Related Art Conventional surface mount fuse resistors are
For example, as disclosed in JP-A-2-43701, a plurality of resistance films are formed on a surface of a thin plate-like substrate by electroless plating, electrodes are formed on the resistance films, and end face electrodes are further formed. After that, the substrate is divided for each resistor to form individual chip fuse resistors.
【０００３】この従来のチップ状ヒューズ抵抗器の抵抗
体は、ニッケル−リンや、ニッケル−ボロン、ニッケル
−タングステン等の金属皮膜を無電解メッキにより形成
したものである。また、特公昭５５−５８４７号公報に
開示されているように、ニッケル−鉄−リン等を無電解
メッキして金属皮膜抵抗体を形成するものもある。The resistor element of the conventional chip-shaped fuse resistor is formed by electroless plating of a metal film of nickel-phosphorus, nickel-boron, nickel-tungsten or the like. Further, as disclosed in Japanese Patent Publication No. 55-5847, there is also one which forms a metal film resistor by electroless plating nickel-iron-phosphorus or the like.
【０００４】[0004]
【発明が解決しようとする課題】上記従来の技術の場
合、過大電流により、抵抗体皮膜を断線させる機構が、
抵抗体皮膜自身の発熱により、その負荷集中部を溶断さ
せて、ヒューズとして機能させるものであった。そし
て、この金属皮膜抵抗体の溶融温度は、上記公報に記載
されているように、約８００〜１０００度Ｃであり、き
わめて高い温度であるため、正確に溶断させることが難
しいものであり、再現性良く所望の電流値で溶断させる
ことが困難であった。また、上記特開平２−４３７０１
号公報では、溶断した負荷集中部に低融点物質からなる
溶融剤を塗布し、溶断部分を確実に絶縁させるようにし
ている。しかし、溶融温度が高いために、所望の電流値
で正確に断線させるように、トリミング等を施して負荷
集中部を形成しても、比較的小電力で溶断させることが
難しいものであった。In the case of the above-mentioned conventional technique, a mechanism for breaking the resistor film by an excessive current is
Due to the heat generated by the resistor film itself, the load concentration part is melted and made to function as a fuse. And, as described in the above publication, the melting temperature of this metal film resistor is about 800 to 1000 ° C., which is an extremely high temperature. It was difficult to melt and blow at a desired current value with good performance. Further, the above-mentioned JP-A-2-43701.
In the publication, a melting agent made of a low melting point substance is applied to the melted load concentration portion so that the melted portion is surely insulated. However, since the melting temperature is high, even if the load concentrated portion is formed by trimming or the like so that the wire is accurately broken at a desired current value, it is difficult to melt the wire with relatively small electric power.
【０００５】この発明は、上記従来の技術に鑑みて成さ
れたもので、簡単な構成で、製造も容易であり、正確に
断線させることが可能なチップ状ヒューズ抵抗器とその
製造方法を提供することを目的とする。The present invention has been made in view of the above prior art, and provides a chip fuse resistor which has a simple structure, is easy to manufacture, and can be accurately broken, and a manufacturing method thereof. The purpose is to do.
【０００６】[0006]
【課題を解決するための手段】この発明は、絶縁性のチ
ップ基板の両端部に電極が形成され、この電極間に、ニ
ッケル−リンに微量のタングステンまたはモリブデンを
添加した金属皮膜抵抗体が形成されたチップ状ヒューズ
抵抗器である。また、この金属皮膜抵抗体は、さらに鉄
を含有しているものである。さらに、この金属皮膜抵抗
体は、非晶質の金属皮膜であり、この金属皮膜抵抗体に
は、トリミングによる溝が形成され、この溝部分を低融
点物質で覆ったものである。According to the present invention, electrodes are formed on both ends of an insulating chip substrate, and a metal film resistor formed by adding a trace amount of tungsten or molybdenum to nickel-phosphorus is formed between the electrodes. Is a chip-shaped fuse resistor. Further, this metal film resistor further contains iron. Further, this metal film resistor is an amorphous metal film, and a groove is formed by trimming in this metal film resistor, and this groove portion is covered with a low melting point substance.
【０００７】またこの発明は、絶縁性のチップ基板の両
端部に電極を形成し、この電極間に、ニッケル−リンに
微量のタングステンまたはモリブデンを添加した金属皮
膜抵抗体を無電解メッキにより形成し、この後この金属
皮膜抵抗体に所定の電流でクラックを生じさせるための
トリミング溝を施し、このトリミング溝部分を低融点物
質で覆うチップ状ヒューズ抵抗器の製造方法である。Further, according to the present invention, electrodes are formed at both ends of an insulating chip substrate, and a metal film resistor in which a trace amount of tungsten or molybdenum is added to nickel-phosphorus is formed between the electrodes by electroless plating. After that, a trimming groove is formed in the metal film resistor to cause a crack with a predetermined current, and the trimming groove portion is covered with a low melting point material.
【０００８】[0008]
【作用】この発明のチップ状ヒューズ抵抗器とその製造
方法は、過大電流により金属皮膜抵抗体にクラックを生
じさせるようにし、このクラック部分に、低融点物質が
流れ込んで、確実に断線状態を維持させるようにしたも
のである。特に、ニッケル−リンに微量のタングステン
またはモリブデンを添加したことにより、金属皮膜の応
力が高くなり、クラックが入り易くしたものである。ま
た、この金属皮膜抵抗体は、非晶質状態で形成され、過
大電流により結晶化し始めると、熱膨張の途中で一旦そ
の体積が減少し、これによりよりクラックが入り易くな
るものである。The chip-shaped fuse resistor and the method for manufacturing the same according to the present invention are designed to cause a crack in the metal film resistor due to an excessive current, and a low melting point substance flows into the crack portion to reliably maintain the disconnection state. It was made to let. In particular, by adding a trace amount of tungsten or molybdenum to nickel-phosphorus, the stress of the metal film is increased and cracks are easily formed. In addition, this metal film resistor is formed in an amorphous state, and when it begins to crystallize due to an excessive current, its volume is temporarily reduced during thermal expansion, which makes cracking easier.
【０００９】[0009]
【実施例】以下この発明の実施例について図面に基づい
て説明する。図１〜図４はこの発明の第一実施例を示す
もので、この実施例のチップ状ヒューズ抵抗器１０は、
セラミックス等の絶縁性のチップ基板１２の表面両端部
に、銀−パラジウム等の導電ペーストを印刷して表面電
極１４を形成し、この表面電極１４間に跨がるように、
例えばニッケル７８．５重量％、リン９重量％、鉄１
２．５重量％に、微量のタングステンまたはモリブデン
を添加した金属皮膜抵抗体１６が、無電解メッキにより
形成されている。尚、この金属皮膜抵抗体１６の融点は
９００度Ｃ程度である。また、チップ基板１２の表面電
極１４と対向する裏面には裏面電極１５が、銀ペースト
等を印刷して形成されている。そして、抵抗体１６に
は、レーザトリマーにより、互い違いに対向した３本の
トリミング溝１７が形成され、このトリミング溝１７が
形成された部分は、３６０度Ｃ位の低温で溶融する低融
点ガラスや樹脂等の低融点物質１８で覆われている。Embodiments of the present invention will be described below with reference to the drawings. 1 to 4 show a first embodiment of the present invention, the chip-shaped fuse resistor 10 of this embodiment is
A conductive paste such as silver-palladium is printed on both ends of the surface of the insulating chip substrate 12 made of ceramics or the like to form the surface electrodes 14, so that the surface electrodes 14 are straddled.
For example, nickel 78.5% by weight, phosphorus 9% by weight, iron 1
A metal film resistor 16 having a small amount of tungsten or molybdenum added to 2.5 wt% is formed by electroless plating. The melting point of the metal film resistor 16 is about 900 ° C. A back surface electrode 15 is formed on the back surface of the chip substrate 12 facing the front surface electrode 14 by printing silver paste or the like. The resistor 16 is formed with three trimming grooves 17 that are alternately opposed to each other by a laser trimmer, and the portion where the trimming grooves 17 are formed is a low-melting-point glass that melts at a low temperature of about 360 ° C. It is covered with a low melting point material 18 such as resin.
【００１０】抵抗体１６及び低融点物質１８は、エポキ
シ系樹脂等のオーバーコート１９により覆われている。
さらに、オーバーコート１９の表面には、抵抗体１６の
抵抗値等を表示する所定の文字２０が、エポキシ系樹脂
等による塗料で印刷形成されている。また、基板１０の
側面には、銀ペースト等を塗布して形成された端面電極
２２が形成され、この端面電極２２及び、表面電極１４
上のメッキ層の外表面に、さらに保護層としてのニッケ
ルメッキ２４と、その外側に、ハンダ付けを確実にする
ためのハンダメッキ２６が施されている。The resistor 16 and the low melting point substance 18 are covered with an overcoat 19 such as an epoxy resin.
Further, on the surface of the overcoat 19, predetermined characters 20 indicating the resistance value of the resistor 16 and the like are formed by printing with a paint such as epoxy resin. Further, an end face electrode 22 formed by applying silver paste or the like is formed on the side surface of the substrate 10, and the end face electrode 22 and the surface electrode 14 are formed.
Nickel plating 24 as a protective layer is further provided on the outer surface of the upper plated layer, and solder plating 26 for ensuring soldering is provided on the outer surface thereof.
【００１１】次にこの実施例のチップ状ヒューズ抵抗器
の製造方法について図３、図４を基にして説明する。こ
の実施例のチップ状ヒューズ抵抗器１０は、先ず、図３
（Ａ）に示すように、チップ基板１２を形成する大型基
板３０の裏面に、端面電極２２が形成される分割線３２
に沿って、裏面電極１５を印刷する。そして、乾燥後、
焼成する。次に、図３（Ｂ）に示すように、各チップ上
基板１２毎に、その両端部で跨がるようにして、表面電
極１４を印刷し、乾燥、焼成する。各チップ上基板１２
の表面電極１５間には、図３（Ｃ）に示すように、パラ
ジウム入りガラスペーストのメッキ下地剤３４を印刷し
焼成する。この後、ニッケル−鉄−リン合金のメッキに
よる金属皮膜抵抗体１６を、表面電極１４間に形成す
る。これにより、図３（Ｄ）に示すように、表面電極１
４上にもメッキ層が形成される。Next, a method of manufacturing the chip-shaped fuse resistor according to this embodiment will be described with reference to FIGS. The chip-shaped fuse resistor 10 of this embodiment is first shown in FIG.
As shown in (A), the dividing line 32 on which the end face electrode 22 is formed on the back surface of the large-sized substrate 30 forming the chip substrate 12.
The back surface electrode 15 is printed along. And after drying,
Bake. Next, as shown in FIG. 3B, the surface electrodes 14 are printed, dried, and fired on each chip upper substrate 12 so as to extend over both ends thereof. Substrate 12 on each chip
As shown in FIG. 3C, a plating base material 34 of a glass paste containing palladium is printed and baked between the surface electrodes 15 of the above. After that, the metal film resistor 16 is formed by plating the nickel-iron-phosphorus alloy between the surface electrodes 14. As a result, as shown in FIG.
A plating layer is also formed on 4.
【００１２】この後、約２５０度Ｃ程度の温度で約２時
間熱エージングを行い、メッキによる金属皮膜を安定化
させる。この金属皮膜抵抗体１６は、非晶質状態で形成
され、非晶質状態を維持する温度で熱エージングを行
う。この後、図３（Ｅ）に示すように、この抵抗体１６
にレーザートリマーによりトリミング溝１７を形成す
る。このトリミング溝１７は、このチップ状ヒューズ抵
抗器１０に過大電流が流れた際に、トリミング溝１７間
で抵抗体１６にクラックを生じさせるものである。さら
に、図３（Ｆ）に示すように、このトリミング溝１７を
覆うように低融点物質１８を印刷形成する。After that, heat aging is performed at a temperature of about 250 ° C. for about 2 hours to stabilize the metal film formed by plating. The metal film resistor 16 is formed in an amorphous state, and is subjected to thermal aging at a temperature that maintains the amorphous state. After this, as shown in FIG.
A trimming groove 17 is formed by laser trimmer. The trimming groove 17 causes a crack in the resistor 16 between the trimming grooves 17 when an excessive current flows through the chip fuse resistor 10. Further, as shown in FIG. 3F, a low melting point substance 18 is formed by printing so as to cover the trimming groove 17.
【００１３】そして、図４（Ｇ）に示すように、抵抗体
１６及び低融点物質１８を覆うオーバーコート１９を、
印刷形成し、図４（Ｈ）に示すように、その表面に文字
２０を印刷する。この後、大型基板３０を分割線３２
で、図４（Ｉ）に示すように、短冊状に分割し、端面に
銀ペースト等を塗布し端面電極２２を形成する。そし
て、図４（Ｊ）に示すように、各チップ基板１２毎に分
割し、端面電極２２、裏面電極１５及び表面電極１４上
の金属皮膜部分に、ニッケルメッキ２４とその外側のハ
ンダメッキ２６を施す。Then, as shown in FIG. 4G, an overcoat 19 for covering the resistor 16 and the low melting point material 18 is formed.
Printing is performed, and the character 20 is printed on the surface as shown in FIG. After that, the large substrate 30 is divided into the dividing lines 32.
Then, as shown in FIG. 4 (I), the end face electrode 22 is formed by dividing it into strips and applying silver paste or the like to the end faces. Then, as shown in FIG. 4 (J), each chip substrate 12 is divided, and nickel plating 24 and solder plating 26 on the outside thereof are plated on the metal film portions on the end face electrodes 22, the back face electrodes 15, and the front face electrodes 14. Give.
【００１４】この実施例のチップ状ヒューズ抵抗器は、
ニッケル−鉄−リン合金のメッキによる金属皮膜抵抗体
１６に、微量のタングステン又はモリブデンが含まれて
いるので、メッキ皮膜の応力が高くなり、トリミング溝
１７間にクラックが入り易いものである。又、この金属
皮膜抵抗体１６は、非晶質の状態で形成されているの
で、過大電流により抵抗体１６が加熱されると、所定の
結晶化温度で金属皮膜の結晶化が始まる。この時、結晶
状態では非晶質状態より密度が高いので、皮膜の体積が
熱膨張の途中で、結晶化に伴い一時的に減少する。これ
により、金属皮膜抵抗体１６には、より大きな応力が作
用し、より容易にクラックが発生するものである。この
クラック発生温度は、４００〜５００度Ｃである。そし
て、クラックが発生した部分には、低融点物質１８が解
けて侵入し、断線して抵抗体１６部分が冷却されると固
化して、断線状態を確実に維持させるものである。The chip-shaped fuse resistor of this embodiment is
Since the metal film resistor 16 formed by plating the nickel-iron-phosphorus alloy contains a trace amount of tungsten or molybdenum, the stress of the plating film becomes high, and cracks are likely to occur between the trimming grooves 17. Further, since the metal film resistor 16 is formed in an amorphous state, crystallization of the metal film starts at a predetermined crystallization temperature when the resistor 16 is heated by an excessive current. At this time, since the crystalline state has a higher density than the amorphous state, the volume of the coating temporarily decreases during the thermal expansion due to crystallization. As a result, a larger stress acts on the metal film resistor 16 and cracks occur more easily. The crack generation temperature is 400 to 500 ° C. Then, the low melting point material 18 is melted and invades into the portion where the crack is generated, and the wire is broken and solidified when the portion of the resistor 16 is cooled, so that the broken state is surely maintained.
【００１５】次のこの発明の第二実施例のチップ状ヒュ
ーズ抵抗器について図５を基にして説明する。こので上
述の実施例と同様の部材は同一符号を付して説明を省略
する。この実施例のチップ状ヒューズ抵抗器は、トリミ
ング溝の形状を変えたもので、互いに対向した２対のト
リミング溝１７の先端部を互いに対向するトリミング溝
１７側に折れた形状に形成したものである。Next, a chip-shaped fuse resistor according to a second embodiment of the present invention will be described with reference to FIG. Therefore, the same members as those in the above-described embodiment are designated by the same reference numerals and the description thereof will be omitted. In the chip-shaped fuse resistor of this embodiment, the shape of the trimming groove is changed, and the tip ends of two pairs of trimming grooves 17 facing each other are formed in a shape bent toward the trimming groove 17 side facing each other. is there.
【００１６】この実施例によれば、上記実施例と同様の
効果に加えて、より正確且つ確実に、このトリミング溝
１７間に、クラック３４を発生させることができるもの
である。According to this embodiment, in addition to the same effect as the above-mentioned embodiment, the crack 34 can be generated between the trimming grooves 17 more accurately and surely.
【００１７】尚、この発明のチップ状ヒューズ抵抗器の
金属皮膜抵抗体は、ニッケル−鉄−リン合金の他、ニッ
ケル−リン合金でもよく、これに他の金属を含有させた
合金でも良い。又、微量添加する金属は、タングステン
又はモリブデンの一方又は両方でも良いものである。さ
らに他の金属を微量添加してもよい。また、表面電極
や、端面電極の組成は適宜選択し得るものであり、銀以
外の銅等の導電性ペーストを使用することも可能であ
り、表面電極の位置も、金属皮膜抵抗体の上に形成する
ものでも良い。The metal film resistor of the chip-shaped fuse resistor of the present invention may be a nickel-iron-phosphorus alloy, a nickel-phosphorus alloy, or an alloy containing another metal. The metal added in a trace amount may be one or both of tungsten and molybdenum. Further, a small amount of another metal may be added. Further, the composition of the surface electrode and the end surface electrode can be appropriately selected, it is also possible to use a conductive paste such as copper other than silver, the position of the surface electrode also on the metal film resistor It may be formed.
【００１８】[0018]
【発明の効果】この発明のチップ状ヒューズ抵抗器は、
金属皮膜抵抗体に、クラックを生じさせて、過大電流に
対して断線するようにしたので、所望の電力値で正確に
断線させることが可能なものである。また、非晶質状態
で、金属皮膜抵抗体を形成しているので、過大電流に対
してより容易にクラックが発生し、正確に断線させるこ
とができるものである。The chip fuse resistor of the present invention is
Since the metal film resistor is cracked so that the metal film resistor is disconnected against an excessive current, it is possible to accurately disconnect the resistor at a desired power value. Moreover, since the metal film resistor is formed in an amorphous state, cracks can be generated more easily against an excessive current, and the wire can be accurately disconnected.
【図１】この発明の第一実施例のチップ状ヒューズ抵抗
器の平面図である。FIG. 1 is a plan view of a chip fuse resistor according to a first embodiment of the present invention.
【図２】図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along the line AA of FIG.
【図３】この実施例のチップ状ヒューズ抵抗器の製造工
程を示す斜視図である。FIG. 3 is a perspective view showing a manufacturing process of the chip fuse resistor of this embodiment.
【図４】この実施例のチップ状ヒューズ抵抗器の製造工
程を示す斜視図である。FIG. 4 is a perspective view showing a manufacturing process of the chip fuse resistor of this embodiment.
【図５】この発明の第二実施例のチップ状ヒューズ抵抗
器の金属皮膜抵抗体の斜視図である。FIG. 5 is a perspective view of a metal film resistor of a chip fuse resistor according to a second embodiment of the present invention.
１０ チップ状ヒューズ抵抗器 １２ チップ基板 １４ 表面電極 １６ 抵抗体 １７ トリミング溝 １８ 低融点物質 ２２ 端面電極 10 Chip Fuse Resistor 12 Chip Substrate 14 Surface Electrode 16 Resistor 17 Trimming Groove 18 Low Melting Substance 22 End Face Electrode
Claims (7)
成し、この電極間に、少なくともニッケル−リンに微量
のタングステンまたはモリブデンを添加した金属皮膜抵
抗体を形成したことを特徴とするチップ状ヒューズ抵抗
器。1. A chip characterized in that electrodes are formed on both ends of an insulating chip substrate, and a metal film resistor in which a trace amount of tungsten or molybdenum is added to at least nickel-phosphorus is formed between the electrodes. Fuse resistor.
成し、この電極間に、少なくともニッケル−リンの金属
皮膜抵抗体を非晶質状態で形成したことを特徴とするチ
ップ状ヒューズ抵抗器。2. A chip-shaped fuse resistor, characterized in that electrodes are formed at both ends of an insulating chip substrate, and at least nickel-phosphorus metal film resistors are formed in an amorphous state between the electrodes. vessel.
しているものであることを特徴とする請求項１又は２記
載のチップ状ヒューズ抵抗器。3. A chip-shaped fuse resistor according to claim 1, wherein the metal film resistor further contains iron.
が形成され、このトリミング溝は、低融点物質で覆われ
ていることを特徴とする請求項１，２又は３記載のチッ
プ状ヒューズ抵抗器。4. The chip-shaped fuse resistor according to claim 1, wherein a trimming groove is formed in the metal film resistor, and the trimming groove is covered with a low melting point substance. vessel.
成し、この電極間に、少なくともニッケル−リンに微量
のタングステンまたはモリブデンを添加した金属皮膜抵
抗体を無電解メッキにより形成し、この後この金属皮膜
抵抗体に所定の電流でクラックを生じさせるためのトリ
ミング溝を施すことを特徴とするチップ状ヒューズ抵抗
器の製造方法。5. An electrode is formed on both ends of an insulating chip substrate, and a metal film resistor in which at least a small amount of tungsten or molybdenum is added to nickel-phosphorus is formed between the electrodes by electroless plating. Then, a method for manufacturing a chip-shaped fuse resistor is characterized in that a trimming groove is formed in the metal film resistor to cause a crack at a predetermined current.
成し、この電極間に、少なくともニッケル−リンの金属
皮膜抵抗体を無電解メッキにより非晶質状態に形成し、
非晶質状態を維持して熱エージングを行い、この後この
金属皮膜抵抗体に所定の電流でクラックを生じさせるた
めのトリミング溝を施すことを特徴とするチップ状ヒュ
ーズ抵抗器の製造方法。6. An electrode is formed on both ends of an insulating chip substrate, and at least a nickel-phosphorus metal film resistor is formed between the electrodes in an amorphous state by electroless plating,
A method of manufacturing a chip-shaped fuse resistor, characterized by performing thermal aging while maintaining an amorphous state, and then providing a trimming groove for causing a crack with a predetermined current in the metal film resistor.
物質で覆い、さらにその表面に保護膜を形成し、上記電
極部が形成されたチップ基板の両端部に端面電極を形成
することを特徴とする請求項５又は６記載のチップ状ヒ
ューズ抵抗器の製造方法。7. The trimming groove is formed and then covered with a low melting point substance, a protective film is further formed on the surface thereof, and end face electrodes are formed at both ends of the chip substrate on which the electrode portion is formed. The method for manufacturing a chip-shaped fuse resistor according to claim 5 or 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5287742A JPH07122406A (en) | 1993-10-22 | 1993-10-22 | Chip-shaped fuse resistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5287742A JPH07122406A (en) | 1993-10-22 | 1993-10-22 | Chip-shaped fuse resistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07122406A true JPH07122406A (en) | 1995-05-12 |
Family
ID=17721174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5287742A Pending JPH07122406A (en) | 1993-10-22 | 1993-10-22 | Chip-shaped fuse resistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07122406A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100473470B1 (en) * | 1999-04-16 | 2005-03-07 | 소니 케미카루 가부시키가이샤 | Protective device |
| KR100478316B1 (en) * | 2000-05-17 | 2005-03-23 | 소니 케미카루 가부시키가이샤 | Protective element |
| KR100770192B1 (en) * | 1999-03-31 | 2007-10-25 | 소니 케미카루 앤드 인포메이션 디바이스 가부시키가이샤 | Protective device |
| WO2011111700A1 (en) * | 2010-03-09 | 2011-09-15 | 北陸電気工業株式会社 | Chip fuse |
| WO2014074360A1 (en) * | 2012-11-12 | 2014-05-15 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Amorphous metal thin-film non-linear resistor |
| US8822978B2 (en) | 2009-05-12 | 2014-09-02 | The State of Oregon Acting by and through... | Amorphous multi-component metallic thin films for electronic devices |
| JP2016152193A (en) * | 2015-02-19 | 2016-08-22 | パナソニックＩｐマネジメント株式会社 | Method of manufacturing circuit protection element |
-
1993
- 1993-10-22 JP JP5287742A patent/JPH07122406A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100770192B1 (en) * | 1999-03-31 | 2007-10-25 | 소니 케미카루 앤드 인포메이션 디바이스 가부시키가이샤 | Protective device |
| KR100473470B1 (en) * | 1999-04-16 | 2005-03-07 | 소니 케미카루 가부시키가이샤 | Protective device |
| KR100478316B1 (en) * | 2000-05-17 | 2005-03-23 | 소니 케미카루 가부시키가이샤 | Protective element |
| US8822978B2 (en) | 2009-05-12 | 2014-09-02 | The State of Oregon Acting by and through... | Amorphous multi-component metallic thin films for electronic devices |
| WO2011111700A1 (en) * | 2010-03-09 | 2011-09-15 | 北陸電気工業株式会社 | Chip fuse |
| CN102792410A (en) * | 2010-03-09 | 2012-11-21 | 北陆电气工业株式会社 | Chip fuse |
| JP5711212B2 (en) * | 2010-03-09 | 2015-04-30 | 北陸電気工業株式会社 | Chip fuse |
| WO2014074360A1 (en) * | 2012-11-12 | 2014-05-15 | The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Amorphous metal thin-film non-linear resistor |
| US9099230B2 (en) | 2012-11-12 | 2015-08-04 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State Univesity | Amorphous metal thin-film non-linear resistor |
| JP2016152193A (en) * | 2015-02-19 | 2016-08-22 | パナソニックＩｐマネジメント株式会社 | Method of manufacturing circuit protection element |
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