JPH0712091B2 - Light receiving element - Google Patents
Light receiving elementInfo
- Publication number
- JPH0712091B2 JPH0712091B2 JP60150794A JP15079485A JPH0712091B2 JP H0712091 B2 JPH0712091 B2 JP H0712091B2 JP 60150794 A JP60150794 A JP 60150794A JP 15079485 A JP15079485 A JP 15079485A JP H0712091 B2 JPH0712091 B2 JP H0712091B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving element
- insulating film
- light
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 産業上の利用分野 本発明は受光素子に関するものである。TECHNICAL FIELD The present invention relates to a light receiving element.
従来の技術 従来の受光素子の構造は第３図のようになっていた。す
なわち、22は受光部、23はアルミニウムからなり受光部
22で蓄積した電荷を読みだしたり出力部へ転送したりす
るための転送部、24は酸化膜、25は層間絶縁膜である。2. Description of the Related Art The structure of a conventional light receiving element is as shown in FIG. That is, 22 is a light receiving part, and 23 is made of aluminum.
A transfer unit for reading out the charge accumulated in 22 and transferring it to the output unit, 24 is an oxide film, and 25 is an interlayer insulating film.
ここで、従来は層間絶縁膜25としては、常圧あるいは減
圧CVD法でつけた酸化膜がよく用いられていた。Here, conventionally, as the interlayer insulating film 25, an oxide film applied by a normal pressure or low pressure CVD method is often used.
発明が解決しようとする問題点 このように構成された受光素子は、第３図で示すＡの光
のように受光部上に入射したものは、信号電荷として蓄
積されるが、Ｂの光のように転送部23付近に入射した光
は、その部分のレンズ効果により進路が曲げられ、光信
号電荷として蓄積されないだけでなく、他の画素へ混入
すると、擬信号の原因となり、さらにこの光により発生
した電荷が信号線に混入するとスミアの原因となる。Problems to be Solved by the Invention In the light-receiving element configured as described above, light incident on the light-receiving portion like the light A shown in FIG. As described above, the light incident on the vicinity of the transfer unit 23 has a path that is bent due to the lens effect of that portion and is not accumulated as an optical signal charge, and when mixed into another pixel, it causes a pseudo signal, and further this light causes If the generated charge mixes into the signal line, it causes smear.
本発明は、かかる点に鑑みてなされたもので、受光部上
に光が集光する受光素子を提供することを目的としてい
る。The present invention has been made in view of the above points, and an object of the present invention is to provide a light receiving element that collects light on a light receiving portion.
問題点を解決するための手段 上記問題点を解決するために、本発明の受光素子は受光
部の上の酸化シリコンと窒化シリコンの混合物からなる
層間絶縁膜が表面に行くにしたがって屈折率を増加させ
るために、窒化シリコンの酸化シリコンに対する割合よ
りも大きくするとともに表面が平坦化されている。Means for Solving the Problems In order to solve the above problems, in the light receiving element of the present invention, the refractive index increases as the interlayer insulating film made of a mixture of silicon oxide and silicon nitride on the light receiving portion goes to the surface. For this reason, the ratio is made larger than the ratio of silicon nitride to silicon oxide and the surface is flattened.
作用 この構成によって、層間絶縁膜が平面マイクロレンズの
働きをし、受光部上への大なる集光効果をもたらす。Action With this configuration, the interlayer insulating film functions as a plane microlens, and brings about a great light-collecting effect on the light receiving portion.
実施例 以下、本発明の一実施例を第１図、第２図にもとづいて
説明する。Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第１図において11は基板、12は受光部、13は受光部12で
蓄積した電荷を転送する転送部、14は酸化膜、15は表面
に行くに従って窒化シリコンの酸化シリコンに対する割
合が大きくなる混合物からなる層間絶縁膜である。In FIG. 1, 11 is a substrate, 12 is a light receiving part, 13 is a transfer part for transferring the charge accumulated in the light receiving part 12, 14 is an oxide film, and 15 is a mixture in which the ratio of silicon nitride to silicon oxide increases toward the surface. Is an interlayer insulating film made of.
次に本発明の製造方法について第２図、（ａ），
（ｂ），（ｃ）を参照しながら説明する。まず、受光部
12,転送部13を形成後、熱酸化法あるいはCVD法により、
酸化膜14を1000Å程度成長させる（第２図（ａ））。次
に、ターゲットとして、酸化シリコン（SiO2）膜と窒化
シリコン（Si3N4）膜の混合膜を使い、窒化シリコン（S
i3N4）膜の比率を増加させながら、マルチスパッタ法に
より多層膜の層間絶縁膜15を形成する（第２図
（ｂ））。層間絶縁膜15を形成後、その上にレジストを
３μｍ程度塗布し、エッチバック法により平坦な形状に
形成する（第２図（ｃ））。Next, the manufacturing method of the present invention will be described with reference to FIG.
A description will be given with reference to (b) and (c). First, the light receiving part
12, after forming the transfer portion 13, by a thermal oxidation method or a CVD method,
The oxide film 14 is grown to about 1000Å (Fig. 2 (a)). Next, as a target, a mixed film of a silicon oxide (SiO 2 ) film and a silicon nitride (Si 3 N 4 ) film is used, and a silicon nitride (S
While increasing the ratio of the i 3 N 4 ) film, the multi-layered interlayer insulating film 15 is formed by the multi-sputtering method (FIG. 2B). After the interlayer insulating film 15 is formed, a resist is applied thereon to a thickness of about 3 μm and is formed into a flat shape by an etch back method (FIG. 2 (c)).
上記のような構成にした場合、層間絶縁膜15は、平坦な
マイクロレンズの働きをするため、転送部13付近に斜め
に入射した光を受光部12上に集光される。即ち受光部12
の開口率が層間絶縁膜15の作用によって等価的に大きく
なる。また、平坦化を行なったことにより、層間絶縁膜
15上のしゃ光部の形成も容易となるためスミアなどの特
性の向上もはかれることは明らかである。In the case of the above configuration, the interlayer insulating film 15 functions as a flat microlens, so that the light obliquely incident near the transfer unit 13 is condensed on the light receiving unit 12. That is, the light receiving unit 12
The aperture ratio of the is equivalently increased by the action of the interlayer insulating film 15. In addition, by performing the planarization, the interlayer insulating film
It is clear that the characteristics such as smear can be improved because the formation of the light-shielding portion on 15 becomes easy.
発明の効果 以上述べてきたように、本発明によれば、受光部上に斜
めに入射した光を集光することができ、実用的にきわめ
て有効である。EFFECTS OF THE INVENTION As described above, according to the present invention, the light obliquely incident on the light receiving portion can be condensed, which is extremely effective in practice.
第１図は本発明の一実施例の受光素子の断面図、第２図
は第１図の受光素子を形成するまでのそれぞれの工程に
おける断面図、第３図は従来の受光素子の断面図であ
る。 14……酸化膜、15……層間絶縁膜。FIG. 1 is a sectional view of a light receiving element according to an embodiment of the present invention, FIG. 2 is a sectional view in each step until the light receiving element of FIG. 1 is formed, and FIG. 3 is a sectional view of a conventional light receiving element. Is. 14 …… Oxide film, 15 …… Interlayer insulating film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 美濃 則央 大阪府門真市大字門真1006番地 松下電子 工業株式会社内 (56)参考文献 特開 昭57−87183（ＪＰ，Ａ) 特開 昭61−196683（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Norio Mino 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (56) References JP-A-57-87183 (JP, A) JP-A-61- 196683 (JP, A)
Claims (2)
隣接する部分上に形成された転送部よりなる受光素子に
おいて、少なくとも前記受光部表面と前記転送部側面に
より形成された凹部に酸化シリコンと窒化シリコンの混
合物からなる絶縁膜が形成されるとともに、前記絶縁膜
中の前記窒化シリコンの前記酸化シリコンに対する割合
が前記受光部表面と前記転送部側面から遠ざかるに従っ
て大きくなっていることを特徴とする受光素子。1. A light receiving element comprising a light receiving portion formed on a substrate and a transfer portion formed on a portion adjacent to the light receiving portion, wherein at least a recess formed by the light receiving portion surface and the transfer portion side surface. An insulating film made of a mixture of silicon oxide and silicon nitride is formed, and the ratio of the silicon nitride to the silicon oxide in the insulating film increases as the distance from the light receiving surface and the transfer portion side surface increases. Characteristic light receiving element.
る特許請求の範囲第１項記載の受光素子。2. The light-receiving element according to claim 1, wherein the surface of the insulating film is flat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60150794A JPH0712091B2 (en) | 1985-07-09 | 1985-07-09 | Light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60150794A JPH0712091B2 (en) | 1985-07-09 | 1985-07-09 | Light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6212172A JPS6212172A (en) | 1987-01-21 |
| JPH0712091B2 true JPH0712091B2 (en) | 1995-02-08 |
Family
ID=15504575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60150794A Expired - Lifetime JPH0712091B2 (en) | 1985-07-09 | 1985-07-09 | Light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712091B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH074531B2 (en) * | 1989-07-26 | 1995-01-25 | 工業技術院長 | High temperature fluid catalytic cracking agent using heat resistant alumina crosslinked montmorillonite |
| WO1995008192A1 (en) * | 1993-09-17 | 1995-03-23 | Polaroid Corporation | Forming microlenses on solid state imager |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5787183A (en) * | 1980-11-20 | 1982-05-31 | Sanyo Electric Co Ltd | Photosensitive semiconductor |
| JPS61196683A (en) * | 1985-02-26 | 1986-08-30 | Mitsubishi Electric Corp | Solid-state image pickup element |
-
1985
- 1985-07-09 JP JP60150794A patent/JPH0712091B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6212172A (en) | 1987-01-21 |
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