JPH07109571A - Electron-beam continuous vapor deposition device - Google Patents

Abstract

PURPOSE:To improve the uniformity and denseness of a vapor-deposited film by detecting the charged state of a vapor-deposited film passing through a discharging means and increasing the cation density when the film exhibits a negative potential with respect to a specified charged state. CONSTITUTION:The vapor-deposited film formed on a polymer film 32 is passed through a plasma space formed in a glow cathode 49, and then the residual surface potential is detected by a potential sensor 50. The detection signal is converted to surface potential data, and the data are inputted to a recorder and a comparing, determining and correcting part in which the tolerance of the surface potential data is compared with that of the residual surface potential and determined. When the surface potential data deviate from the tolerance, an ion density control command is emitted from a mass-flow controller 58 to control the flow rate of the gaseous Ar producing plasma.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam type continuous vapor deposition apparatus for depositing an evaporation material on a continuously running polymer film, and particularly to the uniformity and denseness of a vapor deposition film continuously deposited. The present invention relates to an electron beam continuous vapor deposition apparatus capable of improving the temperature.

[0002]

2. Description of the Related Art For example, an electron beam continuous vapor deposition apparatus for depositing a thin film on the surface of a polymer film is widely used to produce a transparent polymer film for packaging foods in order to prevent permeation of aroma, water and oxygen. Has been.

FIG. 11 is a schematic diagram showing the structure of an electron beam type continuous vapor deposition apparatus of this type.

In this electron beam type continuous vapor deposition apparatus, a shield plate 2 which is horizontally installed in a vacuum container 1 capable of being evacuated and has a rectangular opening surface 2a inside the vacuum container 1 has upper and lower chambers 3 and 4. It is divided into

In the upper chamber 3, an unwinding roll 5 having a rotation axis parallel to the longitudinal direction of the opening surface of the shield plate 2,
A cylindrical cooling roll 6, a winding roll 7, and four auxiliary rolls 8 ₁ to 8 ₄ interposed therebetween are rotatably provided.

The unwinding roll 5 is preliminarily wound with a polymer film 9 before thin film vapor deposition, and the polymer film 9 is continuously sent out to a cylindrical cooling roll 6 via _two auxiliary rolls 8 ₁ and 8 _2. ing.

The cylindrical cooling roll 6 is made of a metal having good thermal conductivity, and is arranged so that a part of its outer peripheral surface projects into the lower chamber 4 from the opening surface 2a of the shielding plate 2.

The take-up roll 7 continuously takes up the polymer film 9 from the cylindrical cooling roll 6 via the lower chamber 4 via two auxiliary rolls 8 ₃ and 8 ₄ .

On the other hand, in the lower chamber 4, the evaporation material 1 is placed so as to face the cylindrical cooling roll 6 protruding from the opening surface 2a of the shielding plate 2 and the polymer film 9 on the outer peripheral portion thereof.
A crucible 11 having 0 is placed below the cylindrical cooling roll 6. Also, the evaporation material 10 in the crucible 11 is
An electron gun 13 for irradiating the electron beam 12 and a deflection coil (not shown) for deflecting the electron beam 12 into the crucible 11 sublimate or evaporate the vapor and continuously deposit the polymer film 9 running above the crucible 11 on the polymer film 9. To form.
The evaporation amount of the evaporation material 10 can be controlled in proportion to the emission current of the electron beam 12.

By the way, the electron beam 12 is applied to the evaporation material 10
When irradiated with, some of the electrons are reflected from the evaporation material 10 onto the vapor-deposited film and secondary electrons are emitted onto the vapor-deposited film. Therefore, the polymer film is affected by these reflected electrons and secondary electrons. It is negatively charged.

Therefore, in order to remove such a negatively charged state, the U.S.P. S. P. A static elimination glow cathode 14 having a structure as shown in Japanese Patent No. 4815415 is provided in the first chamber.

The charge-removing glow cathode 14 is arranged at a stage subsequent to the surface on which the vapor-deposited film is formed in the traveling direction so as to face the outer peripheral portion of the cylindrical cooling roll 6 and generate a glow discharge having a predetermined discharge voltage to generate a high voltage. The negatively charged state in the molecular film 9 is removed.

[0013]

However, in the electron beam type continuous vapor deposition apparatus as described above, when the emission current of the electron beam 12 is increased in order to increase the evaporation amount of the vapor deposition material 10, the polymer film is accordingly increased. 9 has a problem that the negative charge amount increases.

For example, when the polymer film 9 is negatively charged, a positive charge corresponding to the amount of the charge is supplied to the cylindrical cooling roll 6 in contact with the polymer film 9. For this reason,
There is a problem that when the cylindrical cooling roll 6 and the polymer film 9 are peeled off, discharge is generated corresponding to the charge amount, and pinholes and discharge marks as minute defects remain on the polymer film 9.
In addition, there is a problem that an electrostatic attractive force proportional to the charge amount is generated between the cylindrical cooling roll 6 and the polymer film 9, and this electrostatic attractive force damages the polymer film 9 and the vapor deposition film.

Furthermore, since the discharge cathode of the static elimination glow cathode 14 has a constant discharge voltage for glow discharge, there is a problem that the negatively charged state, which continuously changes due to the decrease of the evaporation material 10, cannot be removed.

The present invention has been made in consideration of the above-mentioned circumstances, and it is possible to continuously remove the negatively charged state generated on the polymer film during vapor deposition and improve the uniformity and the denseness of the vapor deposited film. An object is to provide an electron beam type continuous vapor deposition device.

[0017]

In order to achieve the above object, the invention according to claim 1 is to evaporate the vaporized material by irradiating the vaporized material with an electron beam in a vacuum, and continuously from the unwinding roller. Electron beam type which forms a vapor deposition film of the evaporation material on the surface of the polymer film by winding a polymer film which is unwound and runs so as to face the evaporation material by a winding roller. In a continuous vapor deposition apparatus, based on an ion density control command for controlling the cation density of plasma, plasma is formed so as to face the vapor deposition film, and the cations neutralize the negative charge state in the vapor deposition film. And a charge state removing means for detecting the charge state of the vapor deposition film that has passed through the charge state removing means, and a detection result by the charge state detecting means. An electron beam continuous vapor deposition apparatus provided with a charge state control means for sending the ion density control command to the charge state removing means so as to increase the positive ion density of the plasma when the electric potential is more negative than a predetermined charge state. Is.

In the invention according to claim 2, the evaporation material is irradiated with an electron beam in a vacuum to evaporate the evaporation material, and the evaporation material is continuously unwound from the unwinding roller to face the evaporation material. In the electron beam continuous vapor deposition apparatus for forming a vapor deposition film of the evaporation material on the surface of the polymer film by winding the polymer film running so as to be arranged by a take-up roller, Microwaves are radiated into the space between the molecular film and the vaporized particles of the vaporized material to be cationized, and the cationized vaporized particles are attached to the vapor deposited film having a negative charge state to form the vapor deposited film. Based on a film formation assisting means for forming a dense film, and an ion density control command for forming a plasma so as to face the vapor-deposited film and controlling the cation density of this plasma, Charge state removing means for neutralizing and removing the negative charge state of the vapor deposition film by the cations, charge state detecting means for detecting the charge state of the vapor deposition film passing through the charge state removing means, and this charge state And a charge state control means for sending the ion density control command to the charge state removing means so as to increase the positive ion density of the plasma when the detection result by the detection means indicates a negative potential higher than a predetermined charge state. It is an electron beam continuous vapor deposition device.

Further, in the invention corresponding to claim 3, as the charged state removing means, a gas supply means for supplying a source gas as a source of the cations, and the source gas in proportion to the cation density are provided. An electron beam continuous vapor deposition apparatus comprising: a gas amount control means for controlling the supply amount of the source gas supplied by the gas supply means based on the ion density control command to be supplied.

Further, in the invention according to claim 4, as the charged state removing means, a plasma generating means facing the deposited film and the ion so as to supply plasma power in proportion to the cation density. An electron beam continuous vapor deposition apparatus comprising: a plasma power control unit that controls the amount of plasma power supplied by the plasma generation unit based on a density control command.

Further, in the invention corresponding to claim 5, the charged state removing means includes divided plasma generating means facing the vapor deposition film in a direction orthogonal to a traveling direction of the polymer film, and the positive electrode. An electron beam continuous vapor deposition apparatus comprising: a plasma power control unit that controls plasma power supplied by the divided plasma generation unit based on an ion density control command.

Further, in the invention according to claim 6, the charge state detecting means is arranged along a direction orthogonal to the traveling direction of the polymer film, and detects the potential or the charge amount of the vapor deposition film. The electron beam continuous vapor deposition apparatus is characterized by having a plurality of detectors.

Further, in the invention corresponding to claim 7, when the detection result obtained by the charge state detection unit is a negative potential compared to a predetermined charge state, the ions are increased so as to increase the cation density of the plasma. The electron beam continuous vapor deposition apparatus is characterized in that a density control command is fed back to the charging state removing means.

[0024]

Therefore, in the invention corresponding to claim 1, the charged state removing means opposes the deposited film on the basis of the ion density control command for controlling the positive ion density of the plasma by taking the above means. As described above, plasma is formed, and the negative charge state in the vapor deposition film is neutralized and removed by cations, and the charge state detecting means detects the charge state of the vapor deposition film passing through the charge state removing means, and the charge state When the control means indicates a negative potential than the predetermined charge state as a result of detection by the charge state detecting means, an ion density control command is sent to the charge state removing means so as to increase the cation density of plasma. Further, the negatively charged state generated on the polymer film can be continuously removed, and the uniformity and the denseness of the deposited film can be improved.

The invention according to claim 2 adds film forming auxiliary means to the invention according to claim 1, and the film forming auxiliary means is provided in the space between the evaporation material and the polymer film. Corresponding to claim 1 because microwaves are radiated to positively ionize the vaporized particles of the vaporized material, and the vaporized particles that have been cationized are adhered to the vapor deposition film having a negative charge state to form the vapor deposition film densely. In addition to the above effect, the uniformity and denseness of the deposited film can be further improved.

Further, in the invention according to claim 3, as the charged state removing means, the gas supply means supplies a source gas as a source of cations, and the gas amount control means supplies the source material in proportion to the cation density. Since the supply amount of the raw material gas supplied by the gas supply means is controlled based on the ion density control command so as to supply the gas, in addition to the actions of claims 1 and 2, a negative charging state can be easily and reliably achieved. It can be removed continuously.

Further, in the invention according to claim 4, as the charged state removing means, a plasma generating means facing the deposited film, and the ion density so as to supply plasma power in proportion to the cation density. Since the electric power of the plasma for controlling the amount of plasma electric power supplied from the plasma generating means is controlled based on the control command, in addition to the effects of the first and second aspects, the negative charging state can be maintained easily and reliably. Can be removed.

Further, in the invention corresponding to claim 5, the charged state removing means is the divided plasma generating means based on the vapor deposition film in a direction orthogonal to the running direction of the polymer film. Since the plasma electric power means for controlling the supplied plasma electric power is provided, in addition to the effect of the fourth aspect, the uniformity and the denseness of the vapor deposition film can be more accurately improved over the entire surface of the polymer film.

Further, in the invention corresponding to claim 6, as the charging state detecting means, a plurality of detecting portions arranged along a direction orthogonal to the traveling direction of the polymer film are used to detect the potential or the charge amount of the vapor deposition film. Since it is detected, in addition to the effects of the first to fifth aspects, it is possible to improve the uniformity and the denseness of the deposited film over the entire surface of the polymer film.

Further, in the invention corresponding to claim 7, when the detection result obtained by each of the detection parts is a negative potential than a predetermined charged state, the ion density is increased so as to increase the cation density of the plasma. Since the control command is fed back to the charging state removing means, the uniformity and the denseness of the vapor deposition film can be improved over the entire surface of the polymer film in addition to the effect of the sixth aspect.

[0031]

Embodiments of the present invention will be described below with reference to the drawings.

1 and 2 are a partial perspective view and a schematic view showing the structure of an electron beam continuous vapor deposition apparatus according to an embodiment of the present invention. This electron beam type continuous vapor deposition apparatus is provided in a vacuum container 21 capable of being evacuated and has a rectangular opening surface 2
A shield plate 22 having 2a partitions the inside of the vacuum container 21 into first and second chambers 23 and 24. In FIG. 1, only a part of the second chamber 24 is shown and most of it is omitted.

In the first chamber 23, each of the shield plates 2
2, a winding roll 25 having a rotation axis parallel to the longitudinal direction of the opening surface, a cylindrical cooling roll 26, a winding roll 27, and four auxiliary rolls 28 _{1 to} 28 ₄ interposed therebetween.
Is rotatably provided. Further, the first chamber 23 has a window 29, and a suction port 31 having five vacuum pumps 30 is provided as a flange so that the vacuum chambers 30 can be exhausted to reach a vacuum degree of 1 to 10 ^-2 mbar. Has become.

The unwinding roll 25 is preliminarily wound with the polymer film 32 before thin film vapor deposition, and the polymer film 32 is continuously sent out to the cylindrical cooling roll 26 via the _two auxiliary rolls 28 _{1 to} 28 _2. It is a thing.

The cylindrical cooling roll 26 is made of a metal having good thermal conductivity, and is arranged so that a part of the outer peripheral surface thereof projects into the second chamber 24 from the opening surface 22a of the shielding plate 22. There is. In addition, the space between the cylindrical cooling roll 26 and the opening surface 22a of the shield plate 22 is made very small, and the first and second chambers 23, 24 are passed through this space.
Of the two chambers 23, 2 by connecting them to each other.
There is a two-digit pressure difference between the four.

The take-up roll 27 is a cylindrical cooling roll 2
The polymer film 32 from 6 through the second chamber 24 is continuously wound via two auxiliary rolls 28 _{3 to} 28 ₄ .

On the other hand, the second chamber 24 has a diffusion pump (not shown), and this diffusion pump causes 10 ^-4 mbar.
The degree of vacuum can be reached.

Further, the second chamber 24 is provided with a bottom plate 33 in the horizontal direction at the lower part thereof. The bottom plate 33 faces the cylindrical cooling roll 26 protruding from the opening surface 22 a of the shielding plate 22 and the polymer film 32 on the outer peripheral portion thereof, and the evaporation material 34 is arranged along the longitudinal direction of the cylindrical cooling roll 26. Long crucible 35 having
Is placed. The crucible 35 is wound by a cooling water pipe 36 that circulates cooling water, and a crucible cover 37 that is opened corresponding to the opening surface 22 a of the shielding plate 22 is arranged above.

Further, the bottom plate 33 is formed of 4 of the crucible 35.
Supporting members (only a part of which are shown) 38 are erected at respective corners apart from the crucible 35, and each supporting member 38 extends in a direction orthogonal to the longitudinal direction of the crucible 35 (hereinafter referred to as the width direction of the crucible). The slide support surfaces 39 are horizontally extended along the other.

Further, at the lower portion of the second chamber 24, there is provided a first rotating shaft 40a parallel to the longitudinal direction of the crucible 35.
A rotary arm 40 having a base end is rotatably provided. The rotary arm 40 includes the first rotary shaft 4
0a has a second rotating shaft 40b parallel to
A slide plate 41 is rotatably mounted on the rotary shaft 40b. The slide plate 41 is the rotary arm 40.
In response to the above, it slides on the slide support surface 39 so as to move back and forth, and has a function of opening and closing the upper part of the crucible cover 37.

A magnet coil 42 is placed next to the crucible 35 in parallel with the longitudinal direction of the crucible 35, and the magnet coil 42 has the entire width of the crucible 35 sandwiched between the end portions of the magnet coil 42, although only a part thereof is shown. A yoke metal sheet 43 is attached along the width direction of the crucible 35. The yoke metal sheet 43 forms a magnetic field generated by the magnet coil 42 above the crucible 35.

The second chamber 24 is a vacuum container.
21 via the flange 44 provided on the outer wall
Child gun 45₁ , 45₂ Toward the space above the crucible 35
Installed. Each electron gun 45₁ , 45₂ Is an electronic bee
The electron beam 46 has a function of irradiating the electron beam 46.
Inside the crucible 35 by the magnetic field formed by the metal sheet 43
It is possible to deflect to. The evaporation material in the crucible 35
Charge 34 is electron gun 45 ₁ , 45₂ E-beam emitted from
Sublimated or vaporized by the chamber 46, the opening surface of the shield plate 22
22a is a film shape of the polymer film 32 protruding and running.
A vapor deposition film is continuously formed on the growth surface. Also this
An electron beam 46 illuminates the evaporation material 34 in the eel crucible 35.
The state of being shot is the window 4 provided in the second chamber 24.
It is possible to monitor through 7. Also, each electron gun 45
₁ , 45₂ Is a turbo molecular pump for exhaust
(Not shown) is ready for use.

Further, the second chamber 24 is connected to a microwave source (not shown) so as to introduce a microwave into the space between the crucible 35 and the film forming surface. The horn antenna 48 is the electron gun 4
It is attached to the side wall of the chamber above 5 ₁ , 45 ₂ . This microphone antenna 48 is MW (2.45).
Evaporation material 34 obtained by evaporating radio waves of GHz from the crucible 35
And has a function of ionizing the evaporation material 34 and adhering it to the film formation surface.

Further, the glow cathode 49 is disposed opposite to the outer peripheral portion of the cylindrical cooling roll 26 in the same manner as described above in the downstream of the film forming surface in the traveling direction, and a plurality of potential sensors are disposed in the downstream of the glow cathode 49 in the traveling direction. 50 is provided so as to face the polymer film 32.

FIG. 3 is a schematic diagram showing the peripheral structure of these glow cathode and potential sensor. Here, in the glow cathode 49, a cathode 52 having an electric supply line 51 is arranged opposite to the outer peripheral portion of the cylindrical cooling roll 26, and the electric supply line 51 is an insulating portion 53 provided on a side wall of the chamber.
It is connected to the negative electrode of the DC voltage source 54 outside the vacuum container 21 via. In addition, the cathode 52 and the first chamber 23 are provided between the cathode 52 and the first chamber 23.
A grounded dark room shielding 55 is provided in order to prevent the generation of plasma between and. As the cathode 52, for example, a metal cathode made of a metal material such as aluminum or titanium or a magnetron cathode having a magnet can be used.

Two gas introducing pipes 56 for introducing Ar gas are attached to the dark room shielding 55, and each gas introducing pipe 5
6 is connected to an Ar gas cylinder 60 that supplies Ar gas via an operation valve 57, a flow rate controller (MFC) 58, and an original valve 59 outside the vacuum container 21.

As a result, the glow cathode 49 can generate a glow discharge having a predetermined discharge voltage to remove the negatively charged state of the polymer film 32. The glow cathode 49, the direct-current voltage source 54, the flow rate controller 58 as a gas amount control means, and the Ar gas cylinder 60 as a gas supply means constitute a charged state removing means. Further, in FIG. 4, the plasma power control unit 1 as a means for controlling the current of the plasma generated in the glow cathode 49, the dark room shielding, and the voltage applied to the cathode.
00 is connected to the DC voltage source 54, and a flow rate controller 58 as a gas amount control means and an Ar gas cylinder 60 as a gas supply means constitute a charged state removing means.

On the other hand, each potential sensor 50 is arranged along the direction orthogonal to the running direction of the polymer film 32, detects the potential or charge amount of the vapor deposition film on the polymer film 32, and outputs the detection signal as shown in FIG. It has a function of sending to the signal conversion unit 61 shown in. The potential sensor 50 of this type may detect the electrostatic force of the induced charge or the charged charge on the vapor deposition film as a direct driving force by using, for example, a foil electroscope.

Further, the other type of potential sensor 50 has a detection electrode, and the coupling capacitance Co between the detection electrode and the vapor deposition film is periodically changed to be periodically changed on the detection electrode. It is possible to use one that induces an electric charge to be generated, converts a current when the electric charge moves to a voltage Vs by a resistance, and sends a detection signal to the signal conversion unit 61. Note that such a potential sensor includes an oscillating capacitance type potential sensor that periodically changes the coupling capacitance Co by periodically changing the distance between the detection electrode and the vapor deposition film, or the area of the detection electrode is periodically changed. There is a chopper-type potential sensor that changes the coupling capacitance Co periodically by changing to.

Further, the potential sensor 50 has a detection electrode, the detection electrode is brought close to the vapor deposition film, the surface potential is detected based on the induced charge generated in the detection electrode, and the detection signal thereof is converted into the signal conversion section 61. It is possible to use the electrostatic potential induction sensor that sends to the.

Next, a control structure for eliminating such a surface potential will be described with reference to FIG. As shown in the figure, the signal conversion unit 61, when receiving the detection signals from the respective potential sensors 50, converts the detection signals into surface potential value data and averages them, and the averaged surface potential value data. It is sent to the comparison / determination correction unit 62 (charged state control means) and the recorder 63. The potential sensors 50 as the plurality of detection units and the signal conversion unit 61 form a charge state removing unit.

Alternatively, as shown in FIG. 12, the signals from a plurality of detectors arranged in the width direction of the polymer film are grouped, and the detection signals are divided in the width direction and averaged.

The comparison / determination correction unit 62 compares and determines the surface potential value data received from the signal conversion unit 61 with a preset allowable range value of the residual surface potential, and the determination result is the allowable range of the surface potential value data. When it shows deviation from the value, it has a function of sending an ion density control command to the flow rate controller 58 to control the Ar gas flow rate proportional to the cation density during glow discharge.

The recorder 63 records the surface potential of the vapor deposition film based on the surface potential value data received from the signal converter 61.

On the other hand, the control panel 64 has a function of giving the main control section 65 processing conditions including the traveling speed value of the polymer film, the acceleration voltage value of the electron beam and the emission current value. Further, the control panel 64 has a function of setting the presence / absence of recording in the recorder 63 and setting an allowable range value of the residual surface potential in the comparison / determination correction unit 62.

The database 66 also stores glow conditions consisting of supply power values and gas flow rate values corresponding to various processing conditions based on past test results.

When the processing condition is received from the control panel 64, the main control section 65 refers to the database 66 and applies a negative voltage from the DC voltage source 54 to the cathode 52 at the supplied power value corresponding to the processing condition. Further, it has a function of controlling the flow rate controller 58 with a gas flow rate value corresponding to the processing condition. Here, the control command of the gas flow rate value to the flow rate controller 58 is the ion density control command.

Alternatively, as shown in FIG. 6, gas is introduced into the vicinity of the cathode in the dark room shielding from the flow rate adjuster 58 at a gas flow rate value corresponding to the processing conditions, and the cathode 5
2 has a function of applying a negative voltage and controlling the plasma power controller in the DC voltage 54 with a plasma power value corresponding to the processing condition. Here, the control command for the plasma power value to the plasma power meter is the ion density control command. The plasma power controller may be adjusted by constant current control that controls the voltage with a constant current amount or by constant voltage control that controls the current at a constant voltage. The former is preferable.

Next, the operation of the electron beam type continuous vapor deposition apparatus configured as described above will be described with reference to the flowchart of FIG.

Now, the vacuum container 21 has reached a predetermined degree of vacuum, and the evaporation material 34 can be deposited.

The control panel 64 is operated by the operator to
The main control unit 65 sets the processing conditions including the traveling speed value of the polymer film, the acceleration voltage value of the electron beam, and the emission current value.
(ST1).

The main control unit 65 refers to the database 66 based on the processing conditions, sets the supply power value in the DC voltage source 54 among the glow conditions corresponding to the processing conditions, and applies a negative voltage to the cathode 52. Along with the application, the gas flow rate value is set in the flow rate controller 58 (ST2). As a result, the glow cathode 49 ionizes Ar gas to form plasma.

Further, the control panel 64 inputs operating conditions to the recorder 63 by the operation of the operator so as to execute recording by the recorder 63 (ST3), and the remaining surface of the polymer film 32 is displayed on the recorder 63. The potential is recorded, and the allowable range value of the residual surface potential is set in the comparison / determination correction unit 62 (S
T4). Here, the allowable range value of the residual surface potential is 0 to
It is set to (-200) V.

In this state, the electron beam type continuous vapor deposition apparatus causes the polymer film 32 to run by the unwinding roll 25 and the winding roll 27 according to the running speed value, and the electron beam 46 according to the acceleration voltage value and the emission current value. The evaporation material 34 in the crucible 35 is irradiated.
Further, the microwave antenna 48 irradiates the space above the crucible 35 with microwaves.

On the other hand, the irradiation of the electron beam 46 causes the evaporation material 34 to evaporate from the crucible 35, and
Reflected electrons and secondary electrons are emitted from the evaporation material 34 to the polymer film 32. The polymer film 32 is negatively charged by secondary electrons or the like, and the evaporated evaporation material 34 is cationized by microwaves and then adheres to the polymer film 32 to form a vapor deposition film. Since the evaporation material 34 is cationized, it adheres densely to the negatively charged polymer film 32.

Subsequently, the vapor deposition film passes through the plasma space formed in the glow cathode 49 as the polymer film 32 runs. Here, the negatively charged vapor deposition film is
It is electrically neutralized by Ar ⁺ ions in the plasma space, and then each potential sensor 50 detects the residual surface potential.

Each potential sensor 50 detects the residual surface potential of the vapor deposition film and sends the detection signal to the signal converter 61. The signal conversion unit 61 obtains surface potential value data from these detection signals and inputs the surface potential value data to the recorder 63 and the comparison / determination correction unit 62 (ST5).

The comparison / determination correction unit 62 compares and determines the surface potential value data and the allowable range value of the remaining surface potential (ST
6) When the determination result indicates that the surface potential value data is within the allowable range value, the detection of the remaining surface potential by each potential sensor 50 is continued, and it is determined whether or not the potential detection is completed (ST7). Unless the determination result shows the end, the process returns to ST5 and the detection of the residual surface potential by each potential sensor 50 is continued.

Further, in ST6, when the determination result shows that the surface potential value data deviates from the allowable range value, the comparison determination correction section 62 issues an ion density control command so that the surface potential value data falls within the allowable range value. It is sent to the flow rate controller 58 to control the flow rate of Ar gas that forms plasma (S
T8).

In such control, for example, the power supplied to the cathode 52, the residual surface potential of the deposited film, and the Ar
Although there is a correspondence relationship with the gas flow rate as shown in FIG. 9, the comparison determination correction unit 62 uses the correspondence relationship based on this correspondence relationship.
The remaining surface potential of the vapor deposition film is controlled within an allowable range by changing only the Ar gas flow rate while keeping the supplied power value constant.

Alternatively, as shown in the flowchart of FIG. 8, in ST6, when the determination result indicates that the surface potential value data deviates from the allowable range value, the comparison determination correction unit 6
2 sends an ion density control command to the plasma power control unit so that the surface potential value data falls within an allowable range value, and controls the amount of plasma power that forms glow plasma (ST.
8).

In such control, for example, the power supplied to the cathode 52, the residual surface potential of the deposited film, and the glow plasma power have a correspondence relationship as shown in FIG. Based on this correspondence, only the determination correction unit 62 controls the residual surface potential of the vapor deposition film to be within the allowable range by changing the supplied power value while keeping the Ar gas flow rate constant.

Below, when the residual surface potential falls within the allowable range,
The apparatus of this embodiment returns to ST5 and continues to form a vapor deposition film on the polymer film 32 while detecting the residual surface potential by the potential sensor 50.

As described above, according to this embodiment, the glow cathode 49 forms the plasma so as to face the vapor deposition film based on the ion density control command for controlling the positive ion density of the plasma, and the plasma is formed in the vapor deposition film. The negative charge state is neutralized and removed by cations, the potential sensor 50 detects the charge state of the vapor deposition film passing through this plasma space, and the comparison / determination correction unit 62 determines that the detection result by the potential sensor 50 is predetermined. When the deviation from the allowable range value is indicated, the flow rate controller 5 sends an ion density control command to increase the positive ion density of plasma.
8 or to the plasma power adjuster 100, the negatively charged state generated on the polymer film 32 during vapor deposition can be continuously removed, thereby improving the uniformity and denseness of the vapor deposition film. be able to.

Further, according to the present embodiment, since the negatively charged state is removed, the generation of electrostatic attraction is prevented, and accordingly, the polymer film 32 and the vapor deposition film are protected from damage during peeling. At the same time, the generation of discharge marks can be prevented.

Furthermore, according to the present embodiment, the microwave antenna 48 radiates the microwave into the space between the evaporation material 34 and the polymer film 32 to positively ionize the evaporated particles of the evaporation material 34, and Since the cationized vaporized particles are adhered to the vapor deposition film having a negative charge state to form the vapor deposition film densely, the uniformity and the denseness of the vapor deposition film can be further improved.

Further, according to the present embodiment, the voltage is applied to the cathode by adjusting the Ar gas flow rate of the flow rate controller 58, which is easy to control, or by the voltage or current regulator in the plasma power control section, which is easy to control. Since the residual surface potential of the deposited film is controlled by adjusting the voltage or the plasma current, the negatively charged state can be easily and reliably removed continuously.

Further, according to this embodiment, a plurality of potential sensors 50 are arranged along the direction orthogonal to the running direction of the polymer film 32, and the residual surface potential of the film is divided and controlled in the width direction. Because it was made, polymer film 3
It is possible to improve the uniformity and the denseness of the vapor deposition film over the entire surface of No. 2 and thus prevent the occurrence of wrinkles at the time of winding the polymer film 32 due to the unevenness of the negatively charged state.

In the above embodiment, the case where the cation density in the plasma is controlled only by the gas flow rate has been described. However, the present invention is not limited to this, and a probe for monitoring the cation density is provided in the plasma and the monitoring result is Even if the cation density is controlled on the basis of the above, the present invention can be similarly implemented and the same effect can be obtained.

In the above embodiment, the glow cathode 4
Although the case where Ar gas is introduced into 9 has been described, the present invention is not limited to this, and the same effect can be obtained by implementing the present invention in the same manner even if the composition is such that an O ₂ / Ar mixed gas or an H ₂ / Ar mixed gas is introduced. Can be obtained.

Besides, the present invention can be variously modified and implemented without departing from the gist thereof.

[0082]

As described above, according to the present invention, the negative charge state generated on the polymer film during the vapor deposition can be continuously removed, and the uniformity and the denseness of the vapor deposited film can be improved. Provided is an electron beam continuous vapor deposition apparatus capable of further improving uniformity and denseness, easily and surely continuously removing a negatively charged state, and improving uniformity and denseness of a vapor deposition film over the entire surface of a polymer film. it can.

[0083]

[Brief description of drawings]

FIG. 1 is a partial perspective view showing the configuration of an electron beam continuous vapor deposition apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing the configuration of an electron beam type continuous vapor deposition device in the example.

FIG. 3 is a schematic diagram showing a peripheral configuration of a glow cathode and a potential sensor in the example.

FIG. 4 is a schematic diagram showing a peripheral configuration of a glow cathode and a potential sensor in another embodiment.

FIG. 5 is a block diagram for explaining a control function in the embodiment.

FIG. 6 is a block diagram for explaining a control function in another embodiment.

FIG. 7 is a flowchart for explaining the operation of the embodiment.

FIG. 8 is a flowchart for explaining the operation of another embodiment.

FIG. 9 is a graph showing the gas flow rate dependency of the residual surface potential in the example.

FIG. 10 is a diagram showing the plasma potential dependency of the residual surface potential in another example.

FIG. 11 is a schematic diagram showing the configuration of a conventional electron beam continuous vapor deposition apparatus.

FIG. 12 is a relationship diagram of a potential sensor and a glow cathode according to another embodiment.

[Explanation of symbols]

48 ... Microphone antenna 49 ... Glow cathode 50 ... Potential sensor 54 ... DC voltage source 58 ... Flow rate controller 60 ... Ar gas cylinder 61 ... Signal conversion unit 62 ... Comparison judgment correction unit 63 ... Recorder 64 ... Control panel 65 ... Main control Section 66 ... Database 100 ... Plasma power control section

Claims (7)

[Claims] 1. A polymer which irradiates an evaporation material with an electron beam in a vacuum to evaporate the evaporation material and which is continuously unwound from a unwinding roller and runs so as to be opposed to the evaporation material. In an electron beam continuous vapor deposition device that forms a vapor deposition film of the evaporation material on the surface of the polymer film by winding the film with a take-up roller, based on an ion density control command for controlling the cation density of plasma A charged state removing unit that forms plasma so as to face the deposited film and neutralizes and removes the negative charged state in the deposited film by the cations; and the deposited film that has passed through the charged state removing unit. Charging state detecting means for detecting the charging state of the plasma, and when the detection result by the charging state detecting means indicates a negative potential than the predetermined charging state, the cation density of the plasma is Electron beam type continuous deposition apparatus characterized by comprising a charged state control means for sending to the charging state removal means the ion density control command to increase. 2. A polymer which irradiates an evaporation material with an electron beam in a vacuum to evaporate the evaporation material, and which is continuously unwound from a winding roller and runs so as to face the evaporation material. In an electron-beam-type continuous vapor deposition apparatus for forming a vapor deposition film of the evaporation material on the surface of the polymer film by winding the film with a winding roller, a microscopic space is provided between the vaporization material and the polymer film. A film forming auxiliary means for radiating a wave to positively ionize the vaporized particles of the vaporization material, and to attach the cationized vaporized particles to the vapor deposition film having a negative charge state to form the vapor deposition film densely; , A plasma is formed so as to face the vapor deposition film, and a negative charge state in the vapor deposition film is changed based on an ion density control command for controlling the positive ion density of the plasma. The charge state removing means for neutralizing and removing the positive ions, the charge state detecting means for detecting the charge state of the vapor deposition film passing through the charge state removing means, and the detection result by the charge state detecting means are predetermined. An electron beam system characterized by comprising: a charge state control means for sending the ion density control command to the charge state removing means so as to increase the positive ion density of the plasma when the potential is more negative than the charge state. Continuous vapor deposition equipment. 3. The charged state removing means includes a plasma generating means facing the vapor deposition film, and the ion density control command to supply the source gas in proportion to the cation density. 3. An electron beam continuous vapor deposition apparatus according to claim 1, further comprising a gas amount control means for controlling a supply amount of the raw material gas supplied by the gas supply means. 4. The plasma generation means facing the vapor deposition film as the charge state removing means, and the plasma based on the ion density control command so as to supply plasma power in proportion to the cation density. 3. An electron beam continuous vapor deposition apparatus according to claim 1, further comprising plasma power control means for controlling the amount of plasma power supplied by the generation means. 5. The charged state removing means includes divided plasma generating means facing the deposited film in a direction orthogonal to the running direction of the polymer film, and the cation density control command based on the divided plasma generating means. 5. The electron beam continuous vapor deposition apparatus according to claim 4, further comprising plasma power control means for controlling plasma power supplied by the divided plasma generation means. 6. The charged state detecting means includes a plurality of detecting portions arranged along a direction orthogonal to a running direction of the polymer film and detecting a potential or a charge amount of the vapor deposition film. The electron beam continuous vapor deposition apparatus according to claim 1. 7. The ion density control command is sent to the charge state removing means so as to increase the cation density of the plasma when the detection result obtained by the charge state detecting section has a negative potential higher than a predetermined charge state. The electron beam continuous vapor deposition apparatus according to claim 6, which is fed back.