JP2006111931A - Pressure gradient type ion plating film-forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum film-forming apparatus which can form a film even on an electrically insulative material, thoroughly stably form the film on an objective substrate and stably provide a film-formed substrate, and uses a pressure gradient type ion plating method. <P>SOLUTION: A vacuum chamber has a film-forming chamber for forming a film and a substrate transfer chamber for transferring the substrate. The film-forming chamber has an ion-plating film-forming section of a pressure gradient hollow cathode type. The film-forming chamber and the substrate transfer chamber are physically partitioned in terms of pressure by a drum for forming the film and a partition, except the periphery of a region to be film-formed of the drum for forming the film. The ion-plating film-forming section has a first electron-returning electrode which returns electrons in an electrically floating condition, installed in a short pipe; and has a second electron-returning electrode for returning electrons in the electrically floating condition, installed in a first partition chamber which is placed in the vicinity of the drum for forming the film in a film-forming chamber side of the substrate transfer chamber, and at a position in the downstream side of the film-forming region for forming the film, of which the electrical insulation is kept, in the direction of transferring the substrate, has a release port toward the drum for forming the film, and partitions the two chambers in terms of pressure. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vacuum film forming apparatus for forming a thin film on one surface of a substrate by an ion plating method, and in particular, an electrically insulating substance for a film substrate that can be unwound from a roll and wound on a roll. The present invention relates to a pressure gradient ion plating film forming apparatus capable of continuously, stably and efficiently forming a thin film made of

Conventionally, a vacuum film forming apparatus for forming a thin film on a substrate by using a pressure gradient ion plating method is shown in, for example, vacuum (Vol. 27, No. 2, page 64 (1984) to Non-Patent Document 1). As is known, it is known as a known technique.
Vacuum Vol. 27, No. 2, p. 64 (1984) FIG. 3 shows a pressure gradient ion plating apparatus. The ion plating apparatus shown in FIG. 3 generates a thin film by vapor deposition on a substrate 13 disposed in a vacuum chamber 12 by generating a plasma in a vacuum chamber 12 by a pressure gradient type plasma gun 11 (hereinafter also simply referred to as a plasma gun). Is formed. More specifically, the plasma gun 11 includes a cathode 15 connected to the negative side of the discharge power source 14, an annular first intermediate electrode 16 connected to the positive side of the discharge power source 14 via a resistor, and a second intermediate electrode 16. An intermediate electrode 17 is provided, and the discharge gas is supplied from the cathode 15 side, and the discharge gas is put into a plasma state and flows out from the second intermediate electrode 17 into the vacuum chamber 12. The vacuum chamber 12 is connected by a vacuum pump (not shown), and the inside thereof is kept in a predetermined reduced pressure state. A converging coil 18 is provided outside the short tube portion 12A that protrudes toward the second intermediate electrode 17 of the vacuum chamber 12 so as to surround the short tube portion 12A. A hearth 19 made of a conductive material connected to the positive side of the discharge power source 14 is placed in the lower part of the vacuum chamber 12, and a conductive or insulating material serving as a thin film material is placed in a recess on the hearth 19. Contains a vapor deposition material. Further, a hearth magnet 21 is provided inside the hearth 19. And the plasma beam 22 is formed toward the vapor deposition raw material 20 from the 2nd intermediate electrode 17, the vapor deposition raw material 20 is evaporated, it adheres to the lower surface of the base material 13, and a thin film is formed. The focusing coil 18 has a function of contracting the cross section of the plasma beam 22, and the hearth magnet 21 has a function of guiding the plasma beam 22 to the hearth 19.

When an electrically insulating material is formed by the apparatus shown in FIG. 3, the insulating material adheres to the surface of the hearth (anode portion) 19 and the inner surface of the vacuum chamber 12, and the surface of the hearth 19 is particularly electrically insulated. As a result, the energization in the vacuum chamber 12 becomes impossible, and as a result, the phenomenon that each part of the electrode is charged up proceeds with the elapse of the film formation time.
Electrons that attempt to enter such areas where insulating materials adhere and charge up progresses and cannot be energized are reflected and either neutralized by coupling with ions, or finally electrically The reflection of electrons will be repeated until it reaches a place where it can return.
For this reason, the continuous stable control with respect to the plasma beam 22 cannot be performed, and there arises a problem that the stability of the film formation is impaired.
As a technique for solving such a problem, a technique for forming an electrically insulating material is disclosed in Japanese Patent Laid-Open No. 11-269636 (Patent Document 1).
In Japanese Patent Application Laid-Open No. 11-269636, an insulating tube that surrounds a plasma beam generated at a plasma gun outlet toward a vacuum chamber and protrudes in an electrically floating state; The above problem is solved by providing an electron return electrode that surrounds the outer periphery of the insulating tube and has a higher potential than the plasma outlet. However, in the case of depositing an electrically insulating substance, the structure described here is not a structure that takes into account the problem of charging the deposited substrate, but obtains a stably deposited substrate. I couldn't, and it was a problem.

On the other hand, Japanese Patent Publication No. 6-21349 discloses a method of continuously forming a thin film made of an electrically insulating material on a substrate such as a film that can be unwound from a roll and wound on the roll. (Patent Document 2).
However, in the case of forming an electrically insulating substance, the problem described herein is due to the above-mentioned problem caused by the progress of charge-up and the problem of charging the formed substrate. In view of this, the film cannot be formed sufficiently stably, which is a problem.

As described above, in recent years, various vacuum film forming apparatuses for forming a thin film on a target substrate using a pressure gradient ion plating method have been disclosed. In the case of depositing a substance, a vacuum film-forming apparatus that can form a film on a target substrate sufficiently stably and can efficiently and stably form a film-formed substrate. Was demanded.
The present invention corresponds to this, and can be applied to the case where an electrically insulating substance is formed, can be formed sufficiently stably on a target substrate, and can be stably formed. An object of the present invention is to provide a vacuum film forming apparatus using a pressure gradient type ion plating method capable of obtaining a filmed substrate.
In particular, a thin film made of an electrically insulating material is continuously, stably and efficiently formed on a substrate such as a film that can be unwound from a roll and wound on the roll. An object of the present invention is to provide a vacuum film forming apparatus that can perform the above process.

The pressure gradient ion plating film forming apparatus of the present invention is a vacuum film forming apparatus for forming a thin film on one surface of a substrate by an ion plating method, and is a film forming for forming a film in a vacuum chamber. And a base material transport chamber for transporting the base material, the base material transport chamber side having a film forming drum, and a part of the film forming drum being a film forming region A base material transporting part for transporting the base material, which is installed to project toward the film forming chamber side as a part, is arranged, and on the film forming chamber side, a pressure gradient type having a pressure gradient type plasma gun A hollow cathode type ion plating film forming section is provided, and the substrate is transported along the periphery of the film-forming drum, and the film is deposited in the aligned state. Between the chamber and the film formation drum except for the periphery of the film formation region of the film formation drum. The film forming chamber and the base material transfer chamber are physically partitioned by a cutting section, and the ion plating film forming section is formed on a side surface side of the film forming chamber. A short tube portion of the vacuum chamber protruding toward the outlet of the pressure gradient type plasma gun, surrounding the short tube portion, and shrinking a cross section of the plasma beam from the pressure gradient type plasma gun A focusing coil for guiding the plasma beam to the surface of the vapor deposition material disposed in the film forming chamber, and forming a thin film on one surface of the substrate in the film forming region of the film forming drum. A tube is provided with a first electron return electrode that surrounds the periphery of the plasma beam and feeds back electrically floating electrons, and in the vicinity of the film forming drum on the film forming chamber side of the substrate transfer chamber, the coating film In the substrate transport direction in the area A second electron feedback electrode for returning electrically floating electrons is provided in the first partition chamber that is pressure-partitioned with the opening facing the position on the flow side and the film formation drum side. It is a feature.
In the pressure gradient ion plating film forming apparatus described above, the position near the film forming drum on the film forming chamber side of the base material transfer chamber, the position on the upstream side in the substrate transport direction in the coating region, and the film forming A third electron feedback electrode for returning electrically floating electrons is provided in a second partition chamber that pressure-divides the opening toward the drum side.
Further, in any one of the above-described pressure gradient type ion plating film forming apparatuses, the ion plating film forming unit controls a plasma beam converged through the focusing coil by a magnetic field and / or an electric field. Then, a plasma beam shape control unit is provided which makes the shape of the plasma beam incident on the vapor deposition material wider in the form of a sheet in the width direction of the substrate.
Further, in any one of the above-described pressure gradient ion plating film forming apparatuses, the film forming drum is set to a potential that is electrically higher than the potential of the electron feedback electrode. Is.
Further, in any one of the above-described pressure gradient type ion plating film forming apparatuses, the film forming drum is electrically set to a floating level.
Further, in any one of the above-described pressure gradient ion plating film forming apparatuses, an insulating or insulating film is provided between the film forming drum, the pressure gradient plasma gun, and the electron feedback electrode. A partition plate held at a potential is provided.
Further, in any one of the above-described pressure gradient ion plating film forming apparatuses, the base material transport unit includes a base material unwinding unit for supplying the base material to the film forming drum, and a base material. A substrate take-up unit for winding from the film forming drum, unwinding and supplying the substrate to the film forming drum, and winding the substrate from the film forming drum. The film is formed while the film is continuously conveyed.
Further, in any one of the above-described pressure gradient type ion plating film forming apparatuses, the substrate charging generated by the film formation is formed on the substrate transfer chamber side after the film forming region of the film forming drum. A base material strip removing unit is provided, and the base material charge removing unit is a plasma discharge device.
The pressure gradient ion plating film forming apparatus according to any one of the above, further comprising a plasma discharge processing apparatus upstream of the film forming region of the film forming drum and on the substrate transfer chamber side. It is characterized by this.
Further, in any one of the above-described pressure gradient type ion plating film forming apparatuses, the film forming drum is formed of a material containing at least one of stainless steel, iron, and copper. It is what.
In any one of the above-described pressure gradient ion plating film forming apparatuses, the surface of the film forming drum has an average roughness Ra of 10 nm or less.
Further, in any one of the above-described pressure gradient type ion plating film forming apparatuses, the film forming drum is configured to use a cooling medium and / or a heat source medium or a heater between −20 ° C. and + 200 ° C. It is characterized by having a temperature control unit that can be set to a constant temperature.
Further, in any one of the above-described pressure gradient type ion plating film forming apparatuses, the film forming drum has an insulating property in a non-covered region portion that is a region portion that is not covered by the substrate on which the film is formed. The insulating non-covered region is one or more of Al, Si, Ta, Ti, Nb, V, Bi, Y, W, Mo, Zr, and Hf. It is characterized by being coated with an oxide film or nitride film.
Alternatively, the insulating non-covered region is coated with any one of a polyimide resin and a fluororesin, a tape or a coating film, or a mica tape.
Here, the ion plating film forming unit refers to a configuration that contributes to ion plating film formation disposed on the film forming chamber side, and includes all functional units that contribute to ion plating film formation.
In addition, here, “the film formation chamber and the substrate transfer chamber are separated in pressure” means that when the film formation operation is performed while the substrate is transferred, the film formation chamber and the substrate transfer chamber are However, the pressure can be individually controlled within the pressure range required for the film forming operation, and the flow of gas and moisture from the substrate transfer chamber side to the film forming chamber can be prevented at a practical level. It means that the deposition material can be prevented from flowing into the transfer chamber side.
Here, “A and / or B” includes all cases of A, A and B, and B.

(Function)
By adopting such a configuration, the pressure gradient ion plating film forming apparatus of the present invention can cope with the case where an electrically insulating material is formed, and is sufficiently stable on the target substrate. It is possible to provide a vacuum film forming apparatus using a pressure gradient ion plating method that can form a film and can stably form a film-formed substrate.
Specifically, a vacuum chamber has a film formation chamber for film formation and a substrate transfer chamber for transferring a substrate, and a film formation drum is provided on the substrate transfer chamber side. And a base material transport unit for transporting the base material, which is disposed so as to protrude toward the film forming chamber as a film forming region part of the film forming drum, A pressure gradient type hollow cathode type ion plating film forming part having a pressure gradient type plasma gun is provided on the film forming chamber side, and the substrate is transported along the periphery of the film forming drum. The film formation chamber and the base material transfer chamber are separated by the film formation drum and the partition part except for the periphery of the film formation region of the film formation drum. It is physically partitioned, and the film formation chamber and the substrate transfer chamber are partitioned by pressure. The coating film forming unit includes a short tube portion of the vacuum chamber that protrudes toward a side surface side of the film forming chamber toward an outlet portion of the pressure gradient plasma gun, surrounds the short tube portion, and the pressure gradient A converging coil for contracting the cross section of the plasma beam from the plasma gun, and guiding the plasma beam to the surface of the vapor deposition material disposed in the film forming chamber. A thin film is formed on the first tube, and a first electron return electrode is provided in the short tube portion so as to surround the periphery of the plasma beam and return electrically floating electrons, and to form a substrate transfer chamber. In the vicinity of the film forming drum on the film chamber side, the position on the downstream side in the substrate transport direction in the coating region, and in the first partition chamber that partitions pressure-wise with the opening toward the film forming drum side, Second to return floating electrons By providing the electron return electrode has achieved this.
In order to uniformly form a film on a wide base material, a plurality of the pressure gradient type plasma gun, a converging coil, an electronic feedback electrode, and the like are installed in parallel in the base material width direction. It is also possible.

Specifically, the film forming chamber and the base material transfer chamber are partitioned by pressure, and the ion plating film forming unit includes a focusing coil, and first returns electrically floating electrons into the short tube unit. The electron return electrode is provided, and in the vicinity of the film forming drum on the film forming chamber side of the base material transfer chamber, on the downstream side in the substrate transport direction in the coating region, and with the opening facing the film forming drum side By providing a second electron feedback electrode for returning electrically floating electrons in the first partition chamber that is partitioned by pressure, it is possible to supply energy to a stable vapor deposition material. The ion plating film forming unit controls the plasma beam that has passed through the focusing coil by a magnetic field and / or an electric field, so that the shape of the plasma beam incident on the deposition material is widened like a sheet in the width direction of the substrate. Plasma beam shape In the case where the control unit is provided, the plasma beam from the pressure gradient type plasma gun is formed into a sheet-like width in the width direction of the substrate by the plasma beam shape control unit and is incident on the deposition material. As a result, uniform energy supply to the vapor deposition material and uniform film formation on the film formation region can be stably performed.
Evaporation in the vicinity of the film-forming drum is provided by providing a first partition chamber and a second electron feedback electrode in the downstream side of the film-forming region of the film-forming drum in the substrate transport direction. It is possible to reliably return the stray electrons to the second electron feedback electrode in the partition chamber in a state close to the degree of vacuum of the film formation chamber at the time.
In addition, the amount of floating electrons generated in the film formation region portion on the downstream side in the substrate transport direction is much larger than that in the film formation region portion on the upstream side in the substrate transport direction, and the floating electrons are effectively returned. . Further, in the vicinity of the film forming drum on the film forming chamber side of the base material transfer chamber, the upstream position in the substrate transport direction in the coating film region portion, and a second partition that pressure-divides with the opening toward the film forming drum side. In the case where the third electron feedback electrode for returning the electrically floating electrons is provided in the partition chamber, the grasp of the floating electrons in the vicinity of the film formation drum can be ensured, and stable. It enables energy supply to the vapor deposition material.

In addition, since the film formation chamber and the substrate transfer chamber are partitioned in pressure, the inflow of gas and moisture generated from the substrate from the substrate transfer chamber side to the film formation chamber can be prevented, and film formation The inflow of the vapor deposition material from the chamber to the base material transfer chamber side can be prevented.
Inflow of gas and moisture generated from the substrate into the film formation chamber can be avoided, and there is an advantage that a high-quality film can be obtained during film formation.
In addition, the substrate transfer chamber can be made to have a higher degree of vacuum than the film formation chamber, and a vacuum pressure higher than a vacuum pressure of 10 ⁻¹ Pascal (hereinafter also referred to as Pa). Is effectively prevented from being charged, abnormal discharge does not occur, stable film formation and substrate transport are possible, and the device operates without damaging the components installed in the substrate transport section It is supposed to be possible.
The substrate transfer chamber is depressurized by a vacuum exhaust pump, and the ultimate pressure is 100 Pa to 0.0001 Pa. Also in the actual film formation, the range is from 100 Pa to 0.0001 Pa. In order to prevent the inflow of plasma, The vacuum needs to be about 10 to 1000 times higher than the pressure.
Further, from the viewpoint of preventing abnormal discharge due to plasma, the base material transfer chamber is preferably at a vacuum higher than 0.1 Pa, preferably higher than 0.01 Pa, more preferably 0.0001 Pa or less.

Further, the film-forming drum is set to a potential that is electrically higher than the potential of the electron feedback electrode, so that floating electrons do not return from the vicinity of the film-forming drum to the electron feedback electrode. Although the film forming system is stable, particularly when the film forming drum is electrically set at a floating level, more stable film formation is possible.
When the potential of the film-forming drum is set lower than the potential of the electron return electrode or the potential of other parts in the apparatus, the plasma generated in the film-forming chamber is prevented from falling to a place with a large potential difference. Therefore, stable film formation cannot be performed unless the potential is at least higher than the potential of the electron feedback electrode.
Here, the electrical floating level means a state in which the device is designed and configured so as to be electrically insulated from other device parts.
In spite of being designed to ensure insulation, when a refrigerant is used for temperature adjustment such as cooling or heating of the film formation drum, the piping and the refrigerant have some conductivity. Therefore, a state having a resistance of 100Ω to 500Ω with respect to the earth level (ground level) is also included in the scope of the present invention.
In addition, a partition plate that is insulative or held at an insulating potential is provided between the film forming drum, the pressure gradient plasma gun, and the electron return electrode so as to straddle the parts. Floating electrons do not move and the film forming system can be made stable.
By ensuring this insulation, the plasma does not drop electrically, and stable film formation is possible by preventing abnormal discharge of the plasma.

  In addition, when the base material is in the form of a strip or long, and can be wound up and unwound in a roll shape, the base material transport unit is configured to supply the base material to the film forming drum. And a substrate take-up part for winding the substrate from the film-forming drum, and the substrate is taken up from the unwinding supply of the substrate, while the substrate is continuously conveyed. By forming the film, it is possible to form the film on the substrate efficiently at high speed.

In addition, a base material film is formed by providing a base material band removing unit for removing the base material charge generated by the film formation on the base material transfer chamber side after the film forming region of the film forming drum. Thus, it is possible to prevent the base material from being damaged or deteriorated in quality due to the charging.
As the base material charge removing unit, for example, any processing device such as a plasma discharge device, an electron beam irradiation device, a static elimination bar, a glow discharge device, or a corona treatment device can be used.
When a discharge is formed by using a plasma processing apparatus or a glow discharge processing apparatus, a discharge gas such as argon, oxygen, nitrogen, helium or the like is supplied alone or in the vicinity of the base material, and AC plasma, DC plasma, arc Any discharge method such as discharge, microwave, and surface wave plasma can be used.

  In addition, by providing a plasma discharge treatment device upstream of the film formation area of the film formation drum and on the substrate transfer chamber side, it is possible to remove the adhesion of moisture and organic substances on the substrate surface before film formation. The charge can be removed, and the surface of the substrate can be roughened to have good adhesion in film formation.

The film-forming drum is formed of a material containing at least one of stainless steel, iron, copper, and chrome, so that the drum itself has good heat mobility. It is easy to control.
In order to prevent the surface of the drum from being damaged, a hard chrome hard coat treatment or the like may be applied to the drum surface.
Specifically, it is possible to control the temperature using a cooling medium and / or a heat source medium or a heater as a simple method, but in particular, restrictions from related mechanical members (for example, heat-resistant parts such as bearings). From the viewpoint of versatility, etc., it should be equipped with a temperature control part that can be set to a constant temperature between −20 ° C. and + 200 ° C., and the control characteristic (stability) each time is the heat generated by film formation. A mode in which temperature control is performed within a set temperature ± 2 ° C. at the time of loading is preferable.

The film-forming drum has a surface average roughness Ra of 10 nm or less, preferably 5 nm or less, more preferably 2 nm or less.
Usually, the surface roughness of a plastic film is usually 10 nm to 50 nm, 5 nm to 10 nm with a substrate specially processed with surface flatness, and 5 nm or less when the surface is flattened by coating. The surface of the film forming drum is preferably within the above range in order to have temperature flatness such as cooling and heating efficiently because of the surface flatness.

In addition, the film-forming drum has an insulating property on the non-covered area that is not covered by the substrate on which the film is formed, so that it is possible to prevent power from flowing during film formation. Stable film formation becomes possible.
As the insulating non-covered region, one or more oxide films or nitride films of Al, Si, Ta, Ti, Nb, V, Bi, Y, W, Mo, Zr, and Hf are coated. Is mentioned.
Needless to say, the insulating non-covered region may be coated with any one of a polyimide resin, a fluororesin, and a mica, a tape, and a coating film.
Here, the coating film includes all films formed by various coating methods and includes films formed by painting, baking painting, and sintering.

As described above, the present invention can be applied to the case where an electrically insulating material is formed, can be formed sufficiently stably on a target substrate, and can be stably formed. It is possible to provide a vacuum film forming apparatus using a pressure gradient type ion plating method, which can obtain a processed substrate.
In particular, when the substrate is strip-like, long, and can be wound and unwound in a roll, pressure gradient ion plating can efficiently and stably obtain a deposited substrate. It was possible to provide a vacuum film forming apparatus using the method.
That is, a thin film made of an electrically insulating material is continuously, stably and efficiently formed on an insulating plastic film substrate that can be unwound from a roll and wound on the roll. It is possible to provide a vacuum film forming apparatus that can

Embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a structural cross-sectional view of an example of an embodiment of a pressure gradient ion plating film forming apparatus according to the present invention, and FIG. 2 (a) is a cross-sectional view of a film forming drum in A1-A2 of FIG. FIG. 2B is an external view of the film formation drum as viewed from the film formation chamber side.
1-2, 100 is a film forming chamber, 101 is a short tube section, 110 is a plasma gun (a pressure gradient type plasma gun), 111 is a first intermediate electrode, 112 is a second intermediate electrode, and 116 is a cathode. , 120 is a hearth, 125 is a magnet for hearth, 130 is a vapor deposition material, 140 is a converging coil, 150 is a first electron return electrode, 155 is a plasma beam shape controller (also referred to as a plasma beam control magnet), 160 is a discharge 165 is a plasma beam, 170 is a deposition plate, 171 is an opening, 180 is a vacuum pump, 190 is a partitioning part, 200 is a base material transfer chamber, 210 is a base material transport part, 211 is Substrate unwinding section, 212 is a film forming drum, 212A is a film forming area, 212B is a non-covering area section, 212a is a drum, 212b is a rotating shaft, 212c is an insulating tape, 212d Rotating bearings, 213 is a base material winding unit, 214 and 215 are transport rolls, 220 is a base material pre-processing unit, 230 is a base material post-processing unit (also referred to as a substrate charge removing unit), 240 is a vacuum pump, and 280 is a base unit 290 is a second electron return electrode, 291 is a third electron return electrode, 295 is a first partition chamber (also referred to as an electrode chamber), 295a is an open port, and 296 is a second partition chamber (also referred to as an electrode chamber). 296a is an open port, and 300 is a vacuum chamber.

First, an example of an embodiment of a pressure gradient ion plating film forming apparatus of the present invention will be described with reference to FIG.
The pressure gradient type ion plating film forming apparatus of this example is a vacuum film forming apparatus that forms a thin film on one surface of a base material 280 made of a film that can be wound and unwound in a roll shape in a strip shape or a long shape. is there.
One vacuum chamber 300 has a film forming chamber 100 for film formation and a substrate transfer chamber 200 for transferring a substrate, and the substrate 280 is placed on the substrate transfer chamber 200 side. A film forming drum 212 which is transported along the periphery and forms a film along the base material, a base material unwinding portion 211 for supplying the base material 280 to the film forming drum 212, and a base material And a base material take-up portion 213 for taking up 280 from the film formation drum 212, and a part of the film formation drum 212 is projected toward the film formation chamber 100 as a film formation region portion 212A. A base material transport unit 210 for transporting the base material 280 is disposed, and a pressure gradient type hollow cathode type ion plating composition having a pressure gradient type plasma gun 110 is provided on the film forming chamber 100 side. With membrane (not shown) In addition, the film forming chamber 100 and the substrate transfer chamber 200 are physically partitioned by the film forming drum 212 and the partition unit 190 except for the periphery of the film forming region 212A of the film forming drum 212. The film forming chamber 100 and the base material transport chamber 200 are pressure-partitioned, and the base material 280 is unwound and supplied, and the base material 280 is wound up to continuously transport the base material 280. However, film formation is performed.
In this example, the vacuum pump 180 and the vacuum pump 240 individually control the degree of vacuum on the film forming chamber 100 side and the substrate transfer chamber 200 side, respectively.
The substrate transfer chamber 200 is depressurized by the vacuum exhaust pump 240, and the ultimate pressure is 100 Pa to 0.0001 Pa. Even in the actual film formation, the range is from 100 Pa to 0.0001 Pa, and in order to prevent plasma flow, The vacuum needs to be about 10 to 1000 times higher than the pressure of the film chamber 100.
Further, in the base material transport chamber, the base material transport chamber has a higher vacuum than 0.1 Pa, preferably more than 0.01 Pa, from the viewpoint of making it difficult to cause abnormal discharge due to plasma leakage from the film forming chamber or charging of the base material. High vacuum, more preferably higher than 0.001 Pa is preferred.
By making the base material transfer chamber in a high vacuum in this way, it is possible to suppress abnormal discharge in the base material transfer chamber, and to control components such as the guide rolls 214 and 215 and the film tension in the base material transfer chamber. The tension detector (not shown) and the resin parts for ensuring insulation are no longer damaged, the stability and reliability of the equipment are improved, the frequency of equipment parts replacement is reduced, and maintenance is maintained. There is an advantage that becomes easier.
As described above, here, the ion plating film forming section refers to a configuration that contributes to ion plating film formation disposed on the film forming chamber side, and each of the elements that contribute to ion plating film formation. Includes all functional parts.
Further, the ion plating film forming section is provided with a short tube section 101 of the vacuum chamber protruding from the side surface of the film forming chamber 100 toward the outlet portion of the pressure gradient type plasma gun 110. A surface of a deposition material 130 that includes a focusing coil 140 that surrounds the tube portion 101 and contracts a cross section of the plasma beam 165 from the pressure gradient type plasma gun 110, and the plasma beam 165 is disposed in the film forming chamber 100. Then, a thin film is formed on one surface of the base material 280 in the film formation region 212A of the film formation drum 212. Furthermore, the short tube portion 101 surrounds the plasma beam 165 and electrically A first electron return electrode 150 for returning floating electrons is provided, and in the vicinity of the film forming drum 212 on the film forming chamber 100 side of the substrate transfer chamber 200, the coating region 2 In the first partition chamber 295 that pressure-divides the opening 295a toward the film forming drum 212 side at a downstream position in the transport direction of the substrate 280 in 2A, the electrically floating electrons are fed back. 2, an electron return electrode 290, a position near the film forming drum 212 on the film forming chamber 100 side of the base material transfer chamber 200, a position on the upstream side in the transport direction of the substrate 280 in the coating region 212 </ b> A, and film forming A third electron feedback electrode 291 for returning electrically floating electrons is provided in the second partition chamber 296 that pressure-divides the drum 212 toward the opening 296a.
In this example, as described above, the film forming chamber 100 and the base material transfer chamber 200 are separated in pressure, and the ion plating film forming unit includes the converging coil 140 and is disposed in the short tube unit 101. 150 electron feedback electrodes for returning electrically floating electrons are provided, and the second electron feedback electrode 290 is provided, so that the third electron feedback electrode 291 is further provided. This makes it possible to supply energy to a stable vapor deposition material.
In order to uniformly form a film on a wide substrate, a plurality of pressure gradient plasma guns, electron return electrodes, etc. may be installed in parallel in the substrate width direction.
Needless to say, the film formation chamber 100 and the base material transfer chamber 200 are separated in pressure, so that inflow of gas and moisture generated from the base material 280 into the film formation chamber 110 can be avoided. A membrane is obtained.
The film forming drum 212 is set to an electric potential that is electrically higher than the electric feedback electrode 150, thereby preventing floating electrons from returning from the vicinity of the film forming drum 212 to the electron feedback electrode 150. Thus, the film forming system is stable, but more stable film formation is possible particularly when the film forming drum is electrically set to the floating level. Note that when the potential of the film formation drum 212 is low, the plasma generated in the film formation chamber 100 is prevented from falling to a place where the potential difference is large, so at least a potential higher than the potential of the electron feedback electrode 150 is set. Otherwise, stable film formation cannot be performed.
In this example, the electron feedback electrode 150 is provided at a position away from the vapor deposition material 130, and the vapor deposition material 130 is less likely to adhere to the electron feedback electrode 150.

In the pressure gradient ion plating film forming apparatus of this example, the plasma beam 165 that has passed through the focusing coil 140 is controlled between the focusing coil 140 in the deposition chamber 100 and the vapor deposition material 130 by the magnetic field of the magnet. In addition, a plasma beam shape control unit 155 is provided that makes the shape of the plasma beam incident on the vapor deposition material wide in a sheet shape in the width direction of the substrate.
The plasma beam shape control unit 155 of this example is a configuration in which a pair of sheet-like magnets having opposite polarities (N poles or S poles) are arranged to face each other, whereby the plasma beam 165 incident on the vapor deposition material. Is formed into a sheet and a wide evaporation source is formed, so that a uniform film can be formed on a wide substrate.
Moreover, you may install this sheet-like magnet and a vapor deposition source in parallel with respect to the base-material width direction like a plasma gun and an electronic return electrode.

Further, the deposition material does not adhere to an unnecessary portion of the base material 280 disposed so as to cover the film formation drum 212 in the film formation region 212A of the film formation drum 212 of the film formation chamber 100. A deposition preventing plate 170 having a predetermined opening 171 for controlling the deposition material deposition region is provided.
This prevents the deposition material from adhering to unnecessary portions, and enables stable film formation on the base material 280 that covers the film formation region portion 212A of the film formation drum 212 stably.

Further, in the pressure gradient ion plating film forming apparatus of this example, the film was generated by film formation on the base material transfer chamber 200 side at a position subsequent to the film forming region 212A of the film forming drum 212. A substrate post-processing unit 230 comprising a plasma discharge device for removing the substrate charging is provided, and the substrate transport chamber side 200 is provided with a base in a position before the film formation region 212A of the film formation drum 212. The surface of the material 280 is removed to remove moisture and organic substances, and the surface of the substrate 280 is roughened to improve the wettability of the substrate surface and to improve the adhesion at the time of film formation. A substrate pretreatment unit 220 including a plasma discharge treatment apparatus is provided.
In this example, between the film forming chamber 100 and the base material transfer chamber 200, the film forming drum 212 and the partitioning unit 190 are used for physicality except for the periphery of the film forming region 212 A of the film forming drum 212. The film formation chamber 100 and the base material transfer chamber 200 are pressure-partitioned, and the influence of each process by the substrate pretreatment unit 220 and the base material posttreatment unit 230 is directed to the film formation chamber 100 side. Is not enough.
The substrate pretreatment unit 220 and the substrate posttreatment unit 230 are respectively a surface treatment (surface roughening or modification) for adhesion and removal of moisture and organic substances on the surface of the substrate 280 and adhesion with the film. However, in addition to the plasma processing apparatus, any processing apparatus such as an electron beam irradiation apparatus, an infrared lamp, a UV lamp, a charge removal bar, or a glow discharge apparatus can be used.
In the plasma processing apparatus and the glow discharge apparatus, discharge gas such as argon, oxygen, nitrogen, and helium is supplied alone or mixed in the vicinity of the base material 280 to form a discharge.
As a form of discharge, any system such as AC plasma, DC plasma, microwave, surface wave plasma, or the like is used.
In particular, in a film forming apparatus using a pressure gradient ion plating system, it is important to perform charge removal in the substrate post-processing section.
After film formation, the substrate post-processing apparatus must be used to remove the charge. (1) The film is wound around the drum and cannot be smoothly conveyed. (2) The charged film is deteriorated in film quality and the base material is colored. It is essential to remove the electrification, because it causes problems such as deterioration of physical properties and (3) accumulation of electric charge on the take-up roll and difficulty in handling and post-processing.

The film forming operation of the ion plating film forming unit (not shown in the figure number, see FIG. 3) of this example and the operation of each unit will be briefly described below.
The mechanism for generating the plasma beam 165 and the mechanism for injecting the controlled plasma beam into the vapor deposition material 130 to evaporate the vapor deposition material to form a film on the substrate 280 are basically the ion plate shown in FIG. It is exactly the same as a ting device.
A known pressure gradient type plasma gun 110 generates plasma in the film forming chamber 100 of the vacuum chamber 300, and the film forming drum 212 disposed above the film forming chamber 100 and above the film forming chamber 100 is evaporated. A thin film is formed by vapor deposition on the base material 280 covered along the film formation region 212A.
The plasma gun 110 includes a cathode 116 connected to the negative side of the discharge power source 115, and an annular first intermediate electrode 111 and second intermediate electrode 113 connected to the positive side of the discharge power source 115 via a resistor. The discharge gas is supplied from the side 116, and the discharge gas is put into a plasma state so as to flow out from the second intermediate electrode 112 into the film forming chamber 100 of the vacuum chamber 300.
The film forming chamber 100 of the vacuum chamber 300 is connected by a vacuum pump 180, and the inside thereof is kept in a predetermined reduced pressure state.
Further, a converging coil 140 is provided outside the short tube portion 101 protruding toward the second intermediate electrode 112 of the vacuum chamber 300 so as to surround the short tube portion 101.
A hearth 120 made of a conductive material connected to the positive side of the discharge power source 115 is placed under the film forming chamber 100 of the vacuum chamber 300, and becomes a thin film material in a recess on the hearth 120. A conductive or insulating vapor deposition material 130 is contained.
A hearth magnet 125 is provided inside the hearth 120.
Then, a plasma beam 165 is formed from the second intermediate electrode 112 toward the vapor deposition material 130, the vapor deposition material 130 is evaporated, adheres to the base material 280, and a thin film is formed.
In this example, the short tube section 101 is surrounded by the position of the short tube section 101 where the plasma beam 165 is emitted from the second intermediate electrode 112, and the convergence is performed so that the cross section of the plasma beam from the pressure gradient type plasma gun 110 is contracted. A plasma beam shape controller 155 that includes a coil 140 and controls the shape of the contracted plasma beam 165 that passes through the focusing coil 140 and expands to a predetermined width in a sheet shape in the width direction of the substrate 280. The plasma beam 165 from the second intermediate electrode 112 is shrunk in cross section, and is further controlled to be spread in a sheet shape in the width direction of the base material 280 to a predetermined width to be uniform to the deposition material 130. Incident.
The hearth magnet 125 serves to guide the plasma beam 165 to the hearth 120.
Although not shown, the recess in which the deposition material of the hearth 120 is placed matches the width of the base material 280 and is elongated in the width direction, and the deposition material 130 is uniformly placed in the recess longitudinal direction. The vapor deposition material 130 is uniformly evaporated in the width direction of the base material, passes through the opening 171 of the deposition preventing plate 170, and is formed on the base material 280.
Thereby, the uniform energy supply to the vapor deposition material 130 and the uniform film formation on the film forming region 212A can be stably performed.
In this way, the film is formed. During the film formation, the base material 280 rotates along with the film formation drum 212 and rotates together with the film formation drum 212, and is continuously deposited in the belt-like longitudinal direction.
The substrate 280 is transported along with the rotation of the film forming drum 212 and is continuously formed in the belt-like longitudinal direction.

The substrate transport mechanism unit 210 operates as follows.
The substrate 280 is supplied to the film formation drum 212 from the substrate unwinding section 211 via the guide roll 214, and the substrate 280 is discharged from the film formation drum 212. To the substrate roll 213 through the guide roll 215 to form a substrate transport mechanism as a whole.
As described above, in this example, the substrate pretreatment unit 220 including a plasma discharge device is provided on the base material transfer chamber side 200 at a position before the film formation region 212A of the film formation drum 212. Thus, moisture and organic substances on the surface of the base material 280 are removed and the surface of the base material is roughened, and the film formation region of the film formation drum 212 is formed on the base material transfer chamber 200 side. The substrate post-processing unit 230 including a plasma discharge device is provided at a position subsequent to the unit 212A, thereby removing the charging of the substrate generated by the film formation. It is possible to obtain the equipment that has been used.
The base material transport mechanism 210 transports the base material 280 while applying a certain tension to the base material 280.
Usually, an AC drive system or a DC drive system is used for transport system control, a driving motor is used at least for the film forming drum 212, the substrate unwinding unit 211, and the substrate winding unit 213, and tension measurement is performed. A tension pick-up roll is used.
In the conveyance control method, for example, the film formation drum 212 is set as a master roll, used as a tension pickup roll signal, and a necessary torque signal is sent to each motor to control the substrate conveyance.
The tension required for transporting the base material is appropriately changed depending on the type, thickness, and physical properties of the base material 280. As a result, after processing, in this example, after film formation, wrinkles occur on the roll edge and on the front and back surfaces. It is set so that it can be wound into a rolled state in the same manner as before processing without being damaged. The substrate 280 can be conveyed at a speed of 0.1 m / min to 1000 m / min by combining a drive motor and gears.

The film forming drum 212 will be described with reference to FIG.
The film-forming drum 212 shown in FIG. 1 shows a cross section taken along B1-B2 in FIG.
The film-forming drum 212 in this example rotates around the rotation shaft 212b and conveys the base material 280 along the periphery thereof. During the conveyance, as described above, the evaporated deposition material 130 is evaporated. The film is formed by passing through the opening 171 of the deposition preventing plate 170, and the film can be continuously formed on the belt-shaped substrate 280 together with the conveyance of the substrate 280 of the film formation drum 212. It is.
In this example, as the film formation drum 212, from the viewpoint of film formation temperature control, the set temperature is efficiently transmitted to the base material, excellent in heat resistance, excellent in workability, and having sufficient physical strength. From the viewpoint of having, it is formed of a metal material, in particular, a material containing one or more of stainless steel, iron, copper, and chromium, and although not shown, it is constant using a cooling medium and / or a heat source medium or a heater. A temperature control unit that can set the temperature is provided, thermal damage to the substrate can be reduced, and stable film formation is possible.
Further, a hard chrome film hard coat or the like may be formed on the surface for protection.
The substrate 280 can be cooled and heated by the film formation drum 212.
The temperature control unit is versatile and, when using a member that can be easily configured, relatively easily, by using a cooling or heating mechanism such as a refrigerant or a heat medium, between −20 ° C. and + 200 ° C. A constant temperature can be set.

In the film formation drum 212, the vapor deposition material 130 that has been heated at the time of film formation adheres to the surface of the base material 280 to form a vapor deposition film. When the base material 280 has low heat resistance such as a film, Usually, it is desirable to cool, and the temperature is controlled to a constant temperature between −10 ° C. and + 20 ° C.
In this case, if the film formation drum 212 is kept cooled after the film formation is completed, dew condensation occurs on the drum surface (film surface) when returning from the reduced pressure to the atmospheric pressure, so the drum is cooled by heating. It is preferable that the structure be able to quickly return to room temperature.
Moreover, when the base material 280 has heat resistance, the method of heating and using a drum up to about 200 degreeC is also preferable.
As in the case where the substrate 280 is not limited to a film but is a silicon wafer or glass, the higher the temperature of the substrate surface at the time of film formation, the denser and better the film generally formed. Are known.
In order to perform these cooling and heating, for example, a temperature controller having a cooling source and a heating source is used, and an ethylene glycol aqueous solution or oil is used as a temperature medium. A method of circulating through the membrane drum is preferred.
In addition, as a heating method, an infrared lamp, an ultraviolet lamp, or a heater roll can be used alone or in combination.

Further, the film-forming drum 212 is set to a potential that is electrically higher than the potential of the electronic feedback electrode 150 or is set to a floating level.
By setting the potential of the film forming drum higher than the potential of the electron return electrode or the potential of other parts in the apparatus, it is possible to prevent leakage of plasma generated in the film forming chamber. This makes it possible to form a stable film.
Even when the drum is electrically set to the floating level, it is possible to similarly suppress the flow of electricity into the drum, and the same effect can be obtained.
Here, the electrical floating level means a state in which the device is designed and configured so as to be electrically insulated from other device components.
In spite of being designed to ensure insulation, when a refrigerant is used for temperature adjustment such as cooling or heating of the film formation drum, the piping and the refrigerant have some conductivity. Therefore, a state having a resistance of 100Ω to 500Ω with respect to the earth level (ground level) is also included in the scope of the present invention.
When the surface of the film formation drum 212 is in contact with the substrate 280, it is preferable that the entire surface of the film formation drum 212 is electrically insulated from the film formation portion.
In addition, it is preferable that the side surface of the film formation drum and the rotating shaft be provided with insulating clothing as much as possible so that the metal surface that causes electric flow is not exposed.
With such a configuration, it is possible to prevent power from flowing during film formation, and stable film formation is possible.
In this example, as shown in FIG. 2, in order to prevent film formation on the film formation drum 212, an insulating tape 212c is stuck on the drum surface and the side surface portion.
The insulating tape 212c is attached so that the entire surface of the film formation drum 212 is covered with the base material 280 and the insulating tape 212c.
At least the non-covered region 212B, which is a region not covered by the substrate 280 on which the film formation drum 212 is formed, is made insulative. In order to control the temperature, the film formation region of the substrate 280 is Directly touch the drum surface.
From the viewpoint of adhesion to the base material 280 and efficiency of heat conduction to the base material 280, the average roughness Ra of the surface of the film forming drum 212 is 10 nm or less, preferably 5 nm or less, more preferably 2 nm or less. It is preferable that
You may give damage prevention clothing like a hard chromium coat on the surface.
The insulating non-cover region 212B is coated with one or more oxide films or nitride films of Al, Si, Ta, Ti, Nb, V, Bi, Y, W, Mo, Zr, and Hf. Or the insulating non-covered region portion is coated with a molded body, tape or coating film of any one of polyimide resin, fluororesin and mica.
By securing this insulating portion, plasma does not drop electrically, and stable film formation is possible.

As a modification of this example, although not shown in the figure, the film forming drum 212, the pressure gradient type plasma gun 110, and the electron feedback electrode 150 are maintained at an insulating or insulating potential between the respective parts. The thing which provided the partition plate is mentioned.
In this case, between each part of the film-forming drum 212, the pressure gradient plasma gun 110, and the electron feedback electrode 150, a partition plate that is insulative or held at an insulating potential is provided, so The floating electrons do not move so as to cross over the film, and the film forming system can be made more stable.

Next, an example of film formation using the pressure gradient ion plating film forming apparatus of the embodiment shown in FIGS. 1 and 2 will be described.
<Film formation example 1>
The pressure gradient ion plating film forming apparatus of the embodiment shown in FIGS. 1 and 2 was used.
SiO ₂ (manufactured by High Purity Chemical Laboratory, purity 99.995% or more) as a deposition material 130 for film formation, polyethylene terephthalate film (manufactured by Unitika, PET (trade name), thickness 12 μm, width 300 mm, long as a base material 280 2000 m) was prepared.
The base material 280 was set in the apparatus, and the inside of the base material transfer chamber 200 and the film forming chamber 100 was depressurized to 5 × 10 ⁻⁴ Pa by a vacuum exhaust pump.
Thereafter, the film formation drum temperature was 0 ° C. and the base material 280 was conveyed at 50 m / min, and the plasma processing apparatus as the base material post-processing unit 220 was discharged with an argon gas of 100 sccm.
Next, 10 sccm of argon is caused to flow through the plasma gun 110 as a discharge gas 160 to cause an initial plasma discharge, and then the plasma discharge current is increased to 100 A, and the substrate is formed at a pressure of 3 × 10 ⁻² Pa in the film forming chamber 100. A film having a length of 280 and a length of 1800 m was formed.
(Evaluation)
The substrate conveyance state, film formation stability, and plasma leakage into the substrate conveyance chamber were visually observed.
The amount of Si in the formed film was measured with a fluorescent X-ray analyzer (RIX3100, manufactured by Rigaku Denki Kogyo Co., Ltd.) when the sample formed by the above film formation was transported 500 m, 1000 m and 1500 m after the start of film formation. , Measured by the strength ratio with respect to the Si strength during conveyance of 500 m.
The results are shown in the table.
The numerical values are standardized assuming that the Si intensity during the conveyance of 500 m in the film formation example 1 is 1.

<Comparative Example 1>
Except that the second electron feedback electrode 190 and the third electron feedback electrode 191 are omitted, the same apparatus as the pressure gradient ion plating film forming apparatus shown in the embodiment in FIGS. 1 and 2 is used to form a film. Film formation was carried out in the same manner as in Example 1.

表１に示す結果からも分かるように、図１および図２に示す本発明の実施の形態例の圧力勾配型イオンプレーティング成膜装置を用いた場合には、基材搬送、プラズマ安定性、プラズマシールの面で良好で、且つ、蛍光Ｘ線分析装置によるＳｉ量も、５００ｍ搬送時、１０００ｍ搬送時、１５００ｍ搬送時で変化なく、成膜安定性、成膜品質も安定している。
これに対し、比較例１の場合には、プラズマ安定性、プラズマシールの面で良好のものはなく、また成膜品質の面でも成膜例１に比べ、これより安定が劣っていた。
これより、本発明の実施の形態例の圧力勾配型イオンプレーティング成膜装置が、帯状長尺状、ロールから巻き出し、ロールに巻き取ることができるフィルム基材に対して、電気的絶縁性物質からなる薄膜を、連続的に、安定的、且つ効率的に成膜することができる真空成膜装置であることが分かる。

As can be seen from the results shown in Table 1, when the pressure gradient ion plating film forming apparatus of the embodiment of the present invention shown in FIGS. 1 and 2 is used, the substrate transport, plasma stability, In terms of plasma sealing, the amount of Si by the X-ray fluorescence analyzer does not change during 500 m transfer, 1000 m transfer, 1500 m transfer, and the film formation stability and film formation quality are stable.
On the other hand, in the case of Comparative Example 1, nothing was good in terms of plasma stability and plasma seal, and in terms of film quality, the stability was inferior to that of Film Formation Example 1.
Thus, the pressure gradient ion plating film forming apparatus according to the embodiment of the present invention is electrically insulative with respect to a film base material that can be unwound from a roll and wound on the roll. It can be seen that this is a vacuum film forming apparatus capable of continuously, stably and efficiently forming a thin film made of a substance.

1 is a structural cross-sectional view of an example of an embodiment of a pressure gradient ion plating film forming apparatus of the present invention. 2A is a cross-sectional view of the film formation drum in A1-A2 of FIG. 1, and FIG. 2B is an external view of the film formation drum as seen from the film formation chamber side. It is a figure for demonstrating the conventional pressure gradient type ion plating type | formula film-forming apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Plasma gun 12 Vacuum chamber 12A Short tube part 13 Substrate 14 Discharge power supply 15 Cathode 16 1st intermediate electrode 17 2nd intermediate electrode 18 Converging coil 19 Hearth 20 Vapor deposition material 21 Hearth magnet 22 Plasma beam 22A Discharge gas 24 Vacuum exhaust part DESCRIPTION OF SYMBOLS 100 Deposition chamber 101 Short tube part 110 Plasma gun (pressure gradient type plasma gun)
111 First intermediate electrode 112 Second intermediate electrode 116 Cathode 120 Hearth 125 Hearth magnet 130 Vapor deposition material 140 Converging coil 150 First electron feedback electrode 155 Plasma beam shape controller (also referred to as a plasma beam control magnet)
160 Discharge gas (Ar gas here)
165 Plasma beam 170 Depositing plate 171 Opening 180 Vacuum pump 190 Partition unit 200 Base material transport chamber 210 Base material transport unit 211 Base material unwinding unit 212 Film formation drum 212A Film formation region 212B Non-covering region portion 212a Drum 212b Rotation Shaft 212c Insulating tape 212d Rotating bearing 213 Substrate winding part 214, 215 Conveying roll,
220 Substrate pretreatment unit 230 Substrate posttreatment unit 240 Vacuum pump 280 Base material 290 Second electron feedback electrode 291 Third electron feedback electrode 295 First partition chamber (also referred to as electrode chamber)
295a Open port 296 Second partition chamber (also referred to as electrode chamber)
296a Open port 300 Vacuum chamber

Claims (16)

A vacuum film forming apparatus for forming a thin film on one surface of a substrate by an ion plating method,
A vacuum chamber has a film formation chamber for film formation and a substrate transfer chamber for transferring a substrate, the substrate transfer chamber side has a film formation drum, and A part of the film-forming drum is disposed as a film-forming region part toward the film-forming chamber, and is provided with a base material transporting part for transporting the base material. Is equipped with a pressure gradient type hollow cathode type ion plating film forming part having a pressure gradient type plasma gun, and transports the substrate along the periphery of the film forming drum, and forms the film in the state Therefore, the film forming chamber and the base material transfer chamber are physically partitioned by the film forming drum and a partitioning portion except for the periphery of the film forming region portion of the film forming drum. The film forming chamber and the base material transfer chamber are separated by pressure, and the ion plating is performed. The membrane portion includes a short tube portion of the vacuum chamber that protrudes toward a side surface side of the film forming chamber toward the outlet portion of the pressure gradient plasma gun, surrounds the short tube portion, and the pressure gradient plasma A focusing coil for contracting the cross section of the plasma beam from the gun is provided, the plasma beam is guided to the surface of the vapor deposition material disposed in the film forming chamber, and is formed on one surface of the substrate in the film forming region of the film forming drum. A thin film is formed, and a first electron return electrode is provided in the short tube portion to surround the periphery of the plasma beam and return electrically floating electrons, and the film forming chamber of the substrate transfer chamber In an electrically floating state in the vicinity of the film forming drum on the side, in a position on the downstream side in the substrate transport direction in the coating region, and in the first partition chamber for pressure partitioning toward the film forming drum side The second electronic feedback power that returns the electrons of It is provided with a pressure gradient type ion plating film-formation apparatus according to claim.   The pressure gradient type ion plating film forming apparatus according to claim 1, wherein the position of the substrate transport chamber is near the film forming drum on the film forming chamber side, the upstream side of the film region in the substrate transport direction, A pressure gradient, characterized in that a third electron feedback electrode for returning electrically floating electrons is provided in a second partition chamber that pressure-divides the film opening drum toward the opening. Type ion plating film deposition system.   3. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the ion plating film forming unit is converged by passing through a converging coil by a magnetic field and / or an electric field. 4. A pressure gradient type ion characterized by comprising a plasma beam shape control unit for controlling the generated plasma beam so that the shape of the plasma beam incident on the vapor deposition material is widened like a sheet in the width direction of the substrate Plating-type film forming equipment.   4. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the film forming drum is set to a potential that is electrically higher than a potential of the electron feedback electrode. 5. A pressure gradient type ion plating film forming apparatus.   5. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the film forming drum is electrically set to a floating level. 6. Type ion plating film deposition system.   The pressure gradient ion plating film forming apparatus according to any one of claims 1 to 5, wherein each of the film forming drum, the pressure gradient plasma gun, and the electron feedback electrode is disposed between the respective parts. A pressure gradient ion plating film forming apparatus, characterized in that a partition plate that is insulative or maintained at an insulating potential is provided.   7. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the base material transport unit is configured to wind a base material for supplying the base material to the film forming drum. An unloading section and a substrate winding section for winding the substrate from the film-forming drum; unwinding and feeding the substrate to the film-forming drum; A pressure gradient ion plating film forming apparatus characterized in that film formation is performed while winding and continuously conveying a substrate.   The pressure gradient ion plating film forming apparatus according to any one of claims 1 to 7, wherein a film forming region of the film forming drum is positioned downstream of the film forming region, on the substrate transfer chamber side. A pressure gradient ion plating type film forming apparatus comprising a base material strip removing unit for removing base material charge generated by a film.   9. The pressure gradient ion plating film forming apparatus according to claim 8, wherein the base material charge removing unit is a plasma discharge apparatus.   10. The pressure gradient ion plating film forming apparatus according to claim 1, wherein a plasma is provided upstream of the film forming region of the film forming drum and on the substrate transfer chamber side. A pressure gradient ion plating film forming apparatus comprising a discharge processing apparatus.   11. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the film forming drum is made of a material containing at least one of stainless steel, iron, and copper. A pressure gradient type ion plating type film forming apparatus characterized by being formed.   The pressure gradient ion plating film forming apparatus according to any one of claims 1 to 11, wherein the film forming drum has an average roughness Ra of 10 nm or less on a surface thereof. A pressure gradient ion plating film forming apparatus.   13. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the film forming drum uses a cooling medium and / or a heat source medium or a heater to be −20. A winding type pressure gradient type ion plating type film forming apparatus, characterized in that it is equipped with a temperature control unit that can be set to a constant temperature between 0 ° C. and + 200 ° C.   14. The pressure gradient ion plating film forming apparatus according to claim 1, wherein the film forming drum is an uncovered region that is a region not covered with a substrate on which a film is formed. A pressure gradient ion plating film forming apparatus, characterized in that the part is insulative.   15. The pressure gradient ion plating film forming apparatus according to claim 14, wherein the insulating non-covered region portion includes Al, Si, Ta, Ti, Nb, V, Bi, Y, W, Mo, A pressure gradient ion plating film forming apparatus, wherein the film is coated with one or more oxide films or nitride films of Zr and Hf. 15. The pressure gradient ion plating film forming apparatus according to claim 14, wherein the insulating non-covered region is formed of any one of a polyimide resin and a fluororesin, a tape or a coating film, or A pressure gradient type ion plating type film forming apparatus, which is coated with mica tape.

Images