JPH0710937U - Wet processing equipment for semiconductor wafers - Google Patents

Wet processing equipment for semiconductor wafers

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Publication number
JPH0710937U
JPH0710937U JP4767593U JP4767593U JPH0710937U JP H0710937 U JPH0710937 U JP H0710937U JP 4767593 U JP4767593 U JP 4767593U JP 4767593 U JP4767593 U JP 4767593U JP H0710937 U JPH0710937 U JP H0710937U
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JP
Japan
Prior art keywords
processing
wafers
wet processing
wafer
rotating shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4767593U
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Japanese (ja)
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JP2573504Y2 (en
Inventor
清美 落合
Original Assignee
九州コマツ電子株式会社
コマツ電子金属株式会社
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Priority to JP1993047675U priority Critical patent/JP2573504Y2/en
Publication of JPH0710937U publication Critical patent/JPH0710937U/en
Application granted granted Critical
Publication of JP2573504Y2 publication Critical patent/JP2573504Y2/en
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Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】 (修正有) 【目的】 複数の各ウェーハ間において処理効果のばら
つきを小さくして均一処理を行うことができる半導体ウ
ェハのウェット処理装置を提供する。 【構成】 複数の半導体ウェハ1をキャリア2に装填し
て、処理液3を収容した処理槽4内に浸漬させ、複数の
ウェハのそれぞれの端部が少なくとも1軸以上の回動軸
6aに接し、回動軸の回動により半導体ウェハが回転し
て処理加工を行うウェット処理装置において、回動軸の
端部と中央部の直径を異なる大きさにする。
(57) [Summary] (Correction) [Objective] To provide a semiconductor wafer wet processing apparatus capable of performing uniform processing by reducing variations in processing effects among a plurality of wafers. [Structure] A plurality of semiconductor wafers 1 are loaded into a carrier 2 and immersed in a processing bath 4 containing a processing liquid 3, and each end of each of the plurality of wafers is brought into contact with at least one rotary shaft 6a. In a wet processing apparatus in which a semiconductor wafer is rotated by the rotation of a rotary shaft to perform processing, the diameters of the end portion and the central portion of the rotary shaft are set to different sizes.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は半導体ウェハのウェット処理装置に関する。 The present invention relates to a semiconductor wafer wet processing apparatus.

【0002】[0002]

【従来技術】[Prior art]

半導体ウェハは、その結晶の均一性や表面の清浄度、平坦度に対する要求が年 々厳しくなっているため、エッチングや洗浄等のウェット処理が極めて重要とな ってきている。従って、ウェハの同一面内での均一性を維持するために、ウェハ の表面を均一に処理液に触れさせるための種々の工夫が施され、ウェハを回転さ せる装置(実開昭63−27784)、ウェハを揺動させる方法(特開平3−2 31428)、回転と揺動を組み合わせた装置(特開平1−304733)等が 知られている。 しかしながら、これらの方法や装置においては、ウェハの単体面内での均一性 は維持されても、処理液の処理槽内での流速、濃度等の均一性を欠くと、複数の ウェハを同時に処理する際に各ウェハ同士間における均一な処理効果が維持され るとは限らない。このため、処理液を処理槽内で均一に流通させる目的で、処理 液の攪拌やバブリング等が行われている。 Since semiconductor wafers are increasingly demanded for crystal uniformity, surface cleanliness, and flatness, wet processing such as etching and cleaning has become extremely important. Therefore, in order to maintain the uniformity of the wafer in the same plane, various measures have been taken to keep the surface of the wafer in contact with the processing solution, and the device for rotating the wafer (Shokai 63-27784). ), A method of rocking a wafer (JP-A-3-231428), an apparatus combining rotation and rocking (JP-A-1-304733), and the like are known. However, in these methods and devices, even if the uniformity within the single wafer surface is maintained, if the uniformity of the flow rate and concentration of the processing liquid in the processing tank is lacking, multiple wafers can be processed simultaneously. In doing so, a uniform processing effect is not always maintained between the wafers. For this reason, stirring or bubbling of the treatment liquid is carried out for the purpose of uniformly distributing the treatment liquid in the treatment tank.

【0003】[0003]

【考案が解決しようとする課題】[Problems to be solved by the device]

前記のような工夫にも拘らず、処理槽の形状や大きさ、処理液の供給口の場所 等が異なると、処理槽内での処理液の流速や濃度がばらついて同一処理での複数 のウェハ間で処理効果に均一性を欠いてしまうという問題が生じる。 本考案は、複数のウェハを同時に処理する際に各ウェハ間においても処理効果 のばらつきを小さくして均一処理を行うことができる半導体ウェハのウェット処 理装置を提供することを目的とするものである。 Despite the above-mentioned measures, if the shape and size of the processing bath, the location of the processing liquid supply port, etc. are different, the flow velocity and concentration of the processing liquid in the processing bath will vary, and there will be multiple treatments in the same processing. There arises a problem that the processing effect is not uniform among the wafers. It is an object of the present invention to provide a semiconductor wafer wet processing apparatus capable of performing uniform processing by simultaneously processing a plurality of wafers and reducing variations in processing effects among the wafers. is there.

【0004】[0004]

【課題を解決するための手段】[Means for Solving the Problems]

このため本考案では、複数の半導体ウェハをキャリアに装填して、処理液を収 容した処理層内に浸漬させ、複数のウェハのそれぞれの端部が少なくとも1軸以 上の回動軸に接し、回動軸の回転により半導体ウェハが回転して処理加工を行な うウェット処理装置において、処理液の流速や濃度に合わせて、回動軸の端部側 と中央部の回動軸の直径を異なるような構造にしたことを特徴とする。 For this reason, in the present invention, a plurality of semiconductor wafers are loaded into a carrier and immersed in a treatment layer containing a treatment liquid, and each end of each of the plurality of wafers is brought into contact with at least one rotary shaft. In the wet processing equipment that performs processing by rotating the semiconductor wafer by rotating the rotating shaft, the diameter of the rotating shaft at the end side and the center of the rotating shaft is adjusted according to the flow rate and concentration of the processing liquid. Is characterized by a different structure.

【0005】[0005]

【作用】[Action]

1槽で1キャリア毎の処理を行う処理槽で、その中央部にキャリアを配置し、 回転軸の直径が端部、中央部共に同じである処理装置においては、処理槽の中央 で処理液の流速が速いか、或いは処理液の濃度が濃い場合、キャリアに装填され た複数のウェハの中で、キャリアの端部に装填されたウェハよりも、中央部側に 装填されたウェハの方が、処理効果が大となり、端部側に装填されたウェハとの 処理効果に差異が生じる。このような処理装置の場合、ウェハを回転させる回動 軸の直径を、端部よりも中央部を小さくすることにより、中央部側に装填された ウェハは端部側に装填されたウェハよりも回転数が小となり相対的な回転速度が 落ちる、このため、処理液との接触時間と処理液の濃度からの影響が相殺されて 、キャリアの端部側と中央部のウェハへの処理効果が均一化されて、ばらつきが 小さくなる。 In a processing tank that carries out processing for each carrier in one tank, the carrier is placed in the center of the processing tank. When the flow velocity is high or the concentration of the processing solution is high, among the wafers loaded in the carrier, the wafer loaded in the central portion side is better than the wafer loaded in the end portion of the carrier. The processing effect becomes large, and there is a difference in processing effect from the wafer loaded on the edge side. In the case of such a processing apparatus, by making the diameter of the rotating shaft for rotating the wafer smaller in the central portion than in the end portions, the wafer loaded in the central portion side is smaller than the wafer loaded in the end portion side. Since the number of rotations becomes small and the relative rotation speed decreases, the effects of the contact time with the processing solution and the concentration of the processing solution are canceled out, and the processing effect on the wafer on the edge side and the central part of the carrier is reduced. Uniformity reduces variations.

【0006】[0006]

【実施例】【Example】

図1は本考案に係るウェット処理装置の実施例を示す要部縦断面図、図2、図 3及び図4は本考案に係るウェット処理装置の実施例を示す要部横断面図、図5 は従来のウェット処理装置を示す要部横断面図である。 図1に示すように、処理液3を収容した処理槽4の底部には、多数の孔を有す るすのこ5が処理槽底部全体に設けられている。処理液3はこの孔の下方から処 理槽4内に流入して供給するようにされており、オーバーフローした処理液3は 循環して繰り返し流入するようにされている。処理槽4の中央部には、キャリア 2が複数のウェハ1を装填した状態で浸漬され、すのこ5の上に載荷されており 、その下方両側には2本の回動軸6、6が配置されている。 1 is a longitudinal sectional view of an essential part showing an embodiment of a wet processing apparatus according to the present invention, and FIGS. 2, 3 and 4 are transverse sectional views of an essential part showing an embodiment of a wet processing apparatus according to the present invention, FIG. FIG. 4 is a horizontal cross-sectional view of a main part showing a conventional wet processing apparatus. As shown in FIG. 1, a sludge 5 having a large number of holes is provided at the bottom of the treatment tank 4 containing the treatment liquid 3 all over the bottom of the treatment tank. The processing liquid 3 is adapted to flow into the processing tank 4 from below the hole and supplied, and the overflowing processing liquid 3 is circulated and repeatedly supplied. At the center of the processing tank 4, a carrier 2 is immersed in a state in which a plurality of wafers 1 are loaded, and is loaded on a drainboard 5, and two rotary shafts 6, 6 are arranged on both lower sides thereof. Has been done.

【0007】 2本の回動軸6、6は駆動源(図示せず)に連結して回動可能にされており、 ウェハ1の下方端部に接するように設けられている。そして、キャリア2をすの こ5に載荷すると、2本の回動軸6、6がウェハ1の下方端部を圧接し、ウェハ 1がキャリア2の溝から若干浮き上がった状態で保持するように配置されている 。更に、2本の回動軸6、6はウェハの中心を通る鉛直線に対し左右対称な位置 に取り付けられ、その回動によりウェハ1が回転するようにされている。The two rotary shafts 6, 6 are connected to a drive source (not shown) to be rotatable, and are provided so as to contact the lower end portion of the wafer 1. Then, when the carrier 2 is loaded on the drainboard 5, the two rotary shafts 6, 6 press the lower end portion of the wafer 1 so as to hold the wafer 1 slightly lifted from the groove of the carrier 2. It is arranged. Further, the two rotary shafts 6, 6 are attached at positions symmetrical with respect to a vertical line passing through the center of the wafer, and the wafer 1 is rotated by the rotation.

【0008】 上記のようなウェット処理装置において、処理槽4の形状、大きさ、処理液3 の供給口の場所や供給流量等が異なると、処理槽4の中を処理液3が均一に流通 するとは限らず、処理液3の流速や濃度にムラが生じる。つまり図5に示すよう な従来の装置のように回動軸6dの直径が端部、中央部共に同じである装置にお いては、複数の各ウェハ1の間で処理後の品質にばらつきが生じてしまう。In the wet processing apparatus as described above, when the shape and size of the processing tank 4, the location of the supply port of the processing liquid 3 and the supply flow rate are different, the processing liquid 3 is evenly distributed in the processing tank 4. This is not always the case, and the flow velocity and concentration of the treatment liquid 3 become uneven. That is, in a device in which the diameter of the rotating shaft 6d is the same at both the end portion and the central portion as in the conventional device as shown in FIG. 5, there is a variation in the quality after processing among a plurality of wafers 1. Will occur.

【0009】 例えば、図5の装置において、処理槽4の中央部で処理液3の流速が速いか、 或いは濃度が濃い場合、回動軸6dの直径は端部、中央部共に同じであるので、 キャリア2に装填された全てのウェハ1の回転数は一定となる。このためキャリ ア2の中央部に装填されているウェハ1の方が端部に装填されたウェハ1よりも 処理効果が大となり端部側に装填されたウェハ1との処理効果に差異が生じてし まう。 このような場合、即ち処理槽4の中央部において、処理液3の流速が速いか、 或いは濃度が濃い場合は、図2に示すように回動軸6aの直径を、両端部から中 央部に向けて順次小さくなるように形成すると、キャリア2の端部側に装填され たウェハ1の方が中央部側に装填されたウェハ1よりも回転数が大となる。この ため処理液3の濃度とその接触時間との影響が相殺されて、回動軸6a上のどこ に装填されたウェハ1においても処理効果は均一化され、ばらつきが少なくなる 。For example, in the apparatus of FIG. 5, when the flow velocity of the treatment liquid 3 is high or the concentration is high in the central portion of the treatment tank 4, the diameter of the rotating shaft 6d is the same at both the end portion and the central portion. The rotation speeds of all the wafers 1 loaded in the carrier 2 are constant. Therefore, the wafer 1 loaded at the center of the carrier 2 has a greater processing effect than the wafer 1 loaded at the end portion, and a difference in processing effect from the wafer 1 loaded at the end portion side occurs. Let's do it. In such a case, that is, when the flow velocity of the treatment liquid 3 is high or the concentration is high in the central portion of the treatment tank 4, the diameter of the rotating shaft 6a is changed from the both end portions to the central portion as shown in FIG. When the wafers 1 are formed so as to become gradually smaller toward, the rotation speed of the wafer 1 loaded on the end side of the carrier 2 becomes higher than that of the wafer 1 loaded on the center side. For this reason, the effects of the concentration of the processing liquid 3 and its contact time are canceled out, and the processing effect is made uniform in any wafer 1 loaded on the rotating shaft 6a, and variations are reduced.

【0010】 上記の場合と逆で処理槽4の中央部において処理液3の流速が遅いか、或いは 濃度が薄い場合は、図3に示すように回動軸6bの直径を、両端部から中央部に 向けて順次大きくなるように形成する。また、処理槽の横方向で処理液の流速が 片寄っていれば、図4に示すように回動軸6cの直径を、一端から他端に向けて 順次小さくなるようにテーパ状に形成する。Contrary to the above case, when the flow velocity of the treatment liquid 3 is slow in the central portion of the treatment tank 4 or the concentration is low, the diameter of the rotating shaft 6b is set to the center from both ends as shown in FIG. It is formed so that it gradually becomes larger toward the part. Further, if the flow velocity of the treatment liquid is deviated in the lateral direction of the treatment tank, the diameter of the rotating shaft 6c is tapered so that it gradually decreases from one end to the other end as shown in FIG.

【0011】 以上、上記実施例における基本となる構成は、回動軸の端部と中央部において 、その直径を異なる大きさにすることにより、処理液の流速とウェハの回転速度 との相対速度を調節し、処理液の流速及び濃度の差からくる影響を相殺すること により、各ウェハが処理液と接触する時間の差と処理液の濃度の差から受ける影 響を合わせて平均化し、回動軸上のどこに装填されたウェハにおいてもその処理 効果を均一化させるというものである。As described above, the basic configuration of the above-described embodiment is such that the diameters of the end portion and the center portion of the rotating shaft are different, so that the relative speed between the processing liquid flow rate and the wafer rotation speed is increased. The effect of the difference in the flow rate and the concentration of the processing solution is adjusted to compensate for the difference in the contact time of each wafer with the processing solution and the effect of the difference in the processing solution concentration, and the average is calculated. This is to make the processing effect uniform on the wafers loaded anywhere on the axis of motion.

【0012】[0012]

【効果】【effect】

本考案に係るウェット処理装置で半導体ウェハのエッチングや洗浄等のウェッ ト処理を行えば、複数のウェーハ間においても処理効果のばらつきを小さくして 安定した処理を行うことができ、例え処理槽内での処理液の流速や濃度にムラが あっても、それに対応した回動軸を使用することにより安定した品質のウェハを 製造することができる。 By performing wet processing such as etching and cleaning of semiconductor wafers with the wet processing apparatus according to the present invention, it is possible to reduce the dispersion of processing effects among multiple wafers and perform stable processing. Even if there is unevenness in the flow rate or concentration of the processing solution in the process, it is possible to manufacture a wafer of stable quality by using the rotating shaft corresponding to it.

【0013】[0013]

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案に係るウェット処理装置の実施例を示す
要部縦断面図である。
FIG. 1 is a longitudinal sectional view of an essential part showing an embodiment of a wet processing apparatus according to the present invention.

【図2】本考案に係るウェット処理装置の実施例を示す
要部横断面図である。
FIG. 2 is a lateral cross-sectional view of a main part showing an embodiment of the wet processing apparatus according to the present invention.

【図3】本考案に係るウェット処理装置の実施例を示す
要部横断面図である。
FIG. 3 is a lateral cross-sectional view of an essential part showing an embodiment of the wet processing apparatus according to the present invention.

【図4】本考案に係るウェット処理装置の実施例を示す
要部横断面図である。
FIG. 4 is a cross-sectional view of a main part showing an embodiment of the wet processing apparatus according to the present invention.

【図5】従来のウェット処理装置を示す要部横断面図で
ある。
FIG. 5 is a lateral cross-sectional view of a main part showing a conventional wet processing apparatus.

【符号の説明】[Explanation of symbols]

1 ウェハ 2 キャリア 3 処理液 4 処理槽 5 すのこ 6 回動軸 6a 回動軸 6b 回動軸 6c 回動軸 6d 回動軸 DESCRIPTION OF SYMBOLS 1 Wafer 2 Carrier 3 Processing liquid 4 Processing tank 5 Slater 6 Rotation axis 6a Rotation axis 6b Rotation axis 6c Rotation axis 6d Rotation axis

Claims (4)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 複数の半導体ウェハをキャリアに装填し
て、処理液を収容した処理層内に浸漬させ、複数のウェ
ハのそれぞれの端部が少なくとも1軸以上の回動軸に接
し、回動軸の回動により半導体ウェハが回転して処理加
工を行うウェット処理装置において、回動軸の端部と中
央部において、回動軸の直径を異なる大きさにしたこと
を特徴とする半導体ウェハのウェット処理装置。
1. A plurality of semiconductor wafers are loaded into a carrier and immersed in a processing layer containing a processing liquid, and each end of each of the plurality of wafers is brought into contact with at least one rotary shaft to rotate. In a wet processing apparatus that performs processing by rotating a semiconductor wafer by rotating the shaft, the diameter of the rotating shaft is different between the end portion and the central portion of the rotating shaft. Wet processing equipment.
【請求項2】 回動軸の直径を、両端部から中央部に向
けて順次大きくなるようにしたことを特徴とする請求項
1記載の半導体ウェハのウェット処理装置。
2. The wet processing apparatus for a semiconductor wafer according to claim 1, wherein the diameter of the rotating shaft is gradually increased from both ends toward the center.
【請求項3】 回動軸の直径を、両端部から中央部に向
けて順次小さくなるようにしたことを特徴とする請求項
1記載のの半導体ウェハのウェット処理装置。
3. The wet processing apparatus for a semiconductor wafer according to claim 1, wherein the diameter of the rotating shaft is gradually reduced from both end portions toward the central portion.
【請求項4】 回動軸の直径を、一端から他端に向けて
順次小さくなるようにテーパ状にしたことを特徴とする
請求項1記載の半導体ウェハのウェット処理装置。
4. The wet processing apparatus for a semiconductor wafer according to claim 1, wherein the diameter of the rotating shaft is tapered so as to become gradually smaller from one end to the other end.
JP1993047675U 1993-06-30 1993-06-30 Semiconductor wafer wet processing equipment Expired - Lifetime JP2573504Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1993047675U JP2573504Y2 (en) 1993-06-30 1993-06-30 Semiconductor wafer wet processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1993047675U JP2573504Y2 (en) 1993-06-30 1993-06-30 Semiconductor wafer wet processing equipment

Publications (2)

Publication Number Publication Date
JPH0710937U true JPH0710937U (en) 1995-02-14
JP2573504Y2 JP2573504Y2 (en) 1998-06-04

Family

ID=12781856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1993047675U Expired - Lifetime JP2573504Y2 (en) 1993-06-30 1993-06-30 Semiconductor wafer wet processing equipment

Country Status (1)

Country Link
JP (1) JP2573504Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106571A (en) * 2013-11-28 2015-06-08 京セラ株式会社 Etching method
JP2016225447A (en) * 2015-05-29 2016-12-28 株式会社Sumco Semiconductor wafer etching device and semiconductor wafer etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015106571A (en) * 2013-11-28 2015-06-08 京セラ株式会社 Etching method
JP2016225447A (en) * 2015-05-29 2016-12-28 株式会社Sumco Semiconductor wafer etching device and semiconductor wafer etching method

Also Published As

Publication number Publication date
JP2573504Y2 (en) 1998-06-04

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