JP2003037097A - Apparatus and method for surface treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus and a method for surface treatment capable of treating a rotatable asymmetrical region or an arbitrary shape region on the surface of the substrate. SOLUTION: The apparatus for surface treatment treats the surface of the substrate W with a chemical L. The apparatus comprises a holding member 11 capable of holding the substrate W, and a non-treating region control member 31 for suppressing the invasion of the chemical on a non-treating region B on the surface of the substrate W, in such a manner that the member 31 is disposed oppositely to at least a peripheral edge D of a non-treating region B in a state in which the substrate W is held on the member 11. The method for surface treatment using the apparatus is provided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate surface treatment apparatus and method, and more particularly to a surface treatment apparatus for performing wet cleaning or wet etching of a substrate surface in a manufacturing process of semiconductor devices, liquid crystal display devices and the like. The present invention relates to a surface treatment method using this device.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, for example, a peripheral portion of a substrate surface after a plurality of processes such as film formation, lithography, dry etching, etc. is an insulating film or a conductive film formed on a semiconductor substrate. It is in an extremely unstable state such as the end of the processed film being turned up or a part of the processed film is about to come off, which is likely to contribute to the dust source. Therefore, in order to remove such dust source,
Surface treatment of a substrate is performed, such as removing an unnecessary processed film on the peripheral portion of the surface of the substrate by wet etching.

The surface treatment of such a substrate is often carried out by using a rotary type single wafer processing apparatus. Specifically, the substrate is held by the holding member of the single-wafer processing apparatus, and the holding member that holds the substrate in a horizontal state is rotated so that the chemical solution placed above the peripheral portion (processing region) of the substrate surface. From the supply nozzle or the like, the chemical solution is continuously supplied at a constant flow rate to a portion closer to the rotation center of the processing region. Then, the surface of the substrate is processed and the processed film at the peripheral edge is removed by etching while the chemical solution is caused to flow in the outer peripheral direction of the substrate by centrifugal force.

[0004]

However, in the conventional substrate surface treatment method as described above, since the supply of the chemical liquid is controlled by the centrifugal force, when the supply amount is large, the non-treatment inside the peripheral portion of the substrate is not performed. There is a problem that the chemical solution also enters the region and the processed film in the non-processed region is processed. Further, this method has a problem that only a region symmetrical to the rotation center can be processed. For example, in FIG.
When the surface region of the semiconductor substrate S has a rotationally asymmetric chip region H as shown in, the processed film on the outer portion I of the outer peripheral circle of the chip region H is processed in order to secure the chip yield. If the unstable portion of the processed film remains in the inner portion J of the outer peripheral circle of the tip region H, the unstable portion cannot be sufficiently removed, and this is one of the dust sources. As a result, the electrical reliability of the chip may be reduced. Also, if the emphasis is placed on the removal of the unstable portion of the processed film, the processing width of the peripheral portion of the substrate will be widened.
The processing is applied to the chip area H, and the semiconductor substrate S
However, there is a problem that the yield of chips in the above-mentioned method decreases.

In order to solve such a problem, an unnecessary processed film in a rotationally asymmetric region or a region having an arbitrary shape is removed by etching without infiltrating a chemical solution into a non-processed region on the surface of a substrate. There has been a need for a surface treatment method capable of ensuring yield.

Therefore, in order to remove the processed film in a region having an arbitrary shape, a gap forming member that forms a gap with respect to the treatment region on the surface of the substrate is provided, and the treatment liquid is supplied by utilizing the capillary phenomenon. Has been reported (Patent No. 2902)
No. 548). However, this method does not have sufficient controllability for infiltration of the chemical solution in the non-treated region of the substrate surface.

Therefore, it is desired to provide a surface treatment apparatus and a surface treatment method capable of performing a surface treatment on a treatment region having an arbitrary shape on the surface of a substrate without infiltrating a chemical solution into the non-treatment region. Was there.

[0008]

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and it does not allow a chemical solution to penetrate into a non-processed region on the surface of a substrate without causing a rotationally asymmetric region or an arbitrary region. The present invention relates to a surface treatment device and a surface treatment method for treating a region of a shape.

A surface treatment apparatus according to a first aspect of the present invention comprises a holding member capable of holding a substrate and a non-treatment area control member for suppressing infiltration of a chemical solution into a non-treatment area on the surface of the substrate. In the state where the substrate is held by the member, the non-processing area control member is arranged to face at least the peripheral portion of the non-processing area. According to the surface treatment apparatus having the above configuration, the non-treatment area control member is arranged to face at least the peripheral portion of the non-treatment area, so that it is possible to prevent the chemical solution from entering the non-treatment area.

A preferred aspect of the above-mentioned surface treatment apparatus is characterized in that the surface of the non-treatment area control member facing the substrate is made of a material that repels the chemical liquid. According to such a surface treatment apparatus, the surface of the non-treatment area control member formed of the material that repels the chemical liquid is arranged so as to face at least the peripheral portion of the non-treatment area on the surface of the substrate. Therefore, by setting the distance between the surface of the non-processing area control member facing the substrate and the substrate to a distance that is preset by the chemical liquid and the surface forming material of the non-processing area control member so that the chemical liquid does not enter. , The chemical solution was repelled,
It is possible to prevent the chemical solution from entering the non-processed area on the surface of the substrate. Therefore, it is possible to prevent the chemical solution from entering the non-treatment area with good controllability without bringing the non-treatment area control member into contact with the non-treatment area of the substrate.

Another preferred aspect of the surface treatment apparatus of the present invention is that a gas supply port penetrating the surface of the non-treatment area control member facing the substrate is formed. According to such a surface processing apparatus, the gas supply port is formed in the non-processing area control member, and the substrate held by the holding member and the non-processing area control member arranged at a predetermined interval with respect to the substrate. The surface treatment of the substrate can be performed while supplying the gas to the gap. Therefore, in the interval between the substrate and the non-processing area control member, the gas flows from the non-processing area toward the processing area, so that the non-processing area control member does not contact the non-processing area of the substrate and It is possible to prevent the chemical solution from entering the region with good controllability.

The surface treatment method according to claim 6 of the present invention is a surface treatment method for suppressing the infiltration of a chemical solution into the non-treatment area of the surface of the substrate, and at least the non-treatment area of the surface of the substrate. It is characterized in that the chemical solution is supplied to the processing area on the surface of the substrate to perform the processing in a state where the non-processing area control member is opposed to the peripheral portion.

In such a surface treatment method, since the treatment is performed with the non-treatment area control member facing the at least the peripheral portion of the non-treatment area on the surface of the substrate, the chemical solution is prevented from entering the non-treatment area. Since only the treatment region can be treated with the chemical liquid, it is possible to reliably perform the treatment with the chemical liquid in a region having an arbitrary shape such as a rotationally asymmetric region.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the surface treatment apparatus and the surface treatment method of the present invention will be described in detail below. The surface treatment apparatus and the surface treatment method described in the present embodiment supply a chemical solution to the surface of a substrate such as a semiconductor wafer or the like so as to perform a wet cleaning or a wet etching on the surface of the substrate to perform treatment. A surface treatment apparatus for performing the above and a surface treatment method using this apparatus.

(First Embodiment) In the present embodiment, an embodiment of the present invention will be described by taking a surface treatment for removing an unnecessary portion of a SiO ₂ film applied to a semiconductor substrate as an example. As shown in FIG. 2, the substrate W to be surface-treated has a cross-shaped rotationally asymmetric chip region including the central portion of the substrate, and the upper surface of the substrate W is entirely coated with a SiO ₂ film. It is attached.

Here, it is assumed that the upper surface side of the substrate W has a non-processing area B and a processing area C. The non-processed region B is a region including at least a chip region (not shown) in order to ensure that the SiO ₂ film is left on the chip region after the surface treatment, and here, the non-processed region B goes around the outer peripheral shape of the chip region. The area is enlarged. On the other hand, the processing region C is a region other than the non-processing region B on the upper surface side of the substrate W, and is a rotationally asymmetric region continuous with the peripheral portion of the substrate. In this embodiment, a surface treatment apparatus used for treating (etching and removing) the SiO ₂ film in the treatment region C and a surface treatment method using this apparatus will be described.

FIG. 1 is a sectional view of a surface treatment apparatus used in the surface treatment method of the first embodiment, and FIG.
The cross section AA ′ in FIG. The surface treatment apparatus shown in FIG. 1 is a rotary single-wafer processing apparatus, and includes a holding member 11 for holding a substrate W, a chemical solution supply nozzle 21 arranged above the holding member 11, and a substrate held by the holding member 11. A surface 31a facing the upper surface side of W and arranged at an arbitrary interval
And a non-processing area control member 31 having

The holding member 11 is provided with a plurality of support pins 12 for fixing the substrate W by pressing the edge of the substrate W, and the upper surface side which is the processing surface of the substrate W and the lower surface side thereof. The holding member 11 is configured so that it can be fixed without coming into contact with it. The holding member 11 is a spin chuck that can rotate while holding the held substrate W horizontally.

In the present embodiment, since the chemical liquid supply nozzle 21 rotates the substrate W to perform processing, it is taken into consideration that the chemical liquid supplied onto the substrate W flows toward the outer peripheral direction of the substrate W by centrifugal force. , The substrate W held by the holding member 11
Above the processing region C of 1., and is arranged closer to the center of rotation. Note that the chemical solution supply nozzle 22 may be arranged on the holding member 11 side for the purpose of performing the processing on the lower surface side of the substrate W as well as the processing area C on the upper surface side of the substrate W.

The surface 31a of the non-processing area control member 31 facing the substrate W has the same shape as the non-processing area B of the substrate W, and the surface 31a is held while maintaining a predetermined distance from the surface of the substrate W. The non-processed region B of the substrate W held by the member 11 is arranged so as to match the outer peripheral shape. In the present embodiment, the surface 31a of the non-processing area control member 31 is the non-processing area B.
The surface having the same shape as that of the non-processing area B and facing the entire non-processing area B has been described as an example. However, the surface of the substrate W shown in FIG. Should have.

The surface 31a of the non-processing area control member 31 is formed of, for example, a material that repels the chemical liquid L for processing the SiO ₂ film. Here, the material that repels the chemical liquid L is
It is assumed that the material has a contact angle larger than 90 degrees when the chemical liquid L is dropped. Here, since a hydrofluoric acid aqueous solution (HFaq.) Is used as the chemical liquid L, a tetrafluoroethylene polymer can be used as a material for forming the surface 31a of the non-processed region control member 31, but is not limited to this. However, it is not possible to use tetrafluoroethylene / perfluoroalkoxyethylene copolymers such as HFaq. Any material that repels is acceptable.

The surface 31a of the non-processing area control member 31
Since it is sufficient that the material is formed of a material that repels the chemical liquid L, only the surface 31a may be coated with a material that repels the chemical liquid L, or the surface 31a may be treated to repel the chemical liquid L.

Further, the non-processing area control member 31 can rotate in the same direction and at the same rotation speed in synchronization with the holding member 11. Further, the rotation axis is assumed to be on the coaxial line.

Further, the surface treatment apparatus of this embodiment includes, for example, a measuring means for measuring the distance between the substrate W held by the holding member 11 and the surface 31a of the non-treatment area control member 31, and the non-treatment area control member. The substrate W held by the holding member and the surface 31a of the non-processing area control member 31 are based on the drive unit for moving the unit 31 up and down, and the interval measured by the measuring unit and the preset interval. Control means for controlling the vertical movement of the non-processing area control member 31 by the driving means is provided so that the set interval is obtained. If the measurement means and the control means are provided, the distance between the non-processing area control member 31 and the substrate W can be freely adjusted.

Next, the surface treatment method of this embodiment using the surface treatment apparatus having the above-mentioned structure will be described. First, the substrate W is held by the holding member 11, and the surface 31 of the non-processing area control member 31 is held.
a is a non-processing region B of the substrate W held by the holding member 11.
And the surface 31a of the non-processing area control member 31 and the substrate W are arranged at predetermined intervals so that the chemical liquid L does not enter. At this time, for example, the distance between the surface 31a of the non-processing area control member 31 and the substrate W is measured by a measuring means, and the measured distance and the non-processing area control member are set in advance so that the chemical liquid L does not enter. The distance by which 31 is moved is calculated by the control means. Then, the non-processing area control member 31a is moved in the vertical direction so that the surface 31a of the non-processing area control member 31 and the substrate W can be moved.
The interval between and is adjusted to a predetermined interval.

Here, the distance between the surface 31a of the non-processing area control member 31 and the substrate W, which is set so that the chemical liquid L does not enter, is experimentally determined by the forming material of the chemical liquid L and the surface 31a. Is. However, even if the predetermined interval is set, when a small amount of the chemical liquid L enters the boundary portion (for example, the region d shown in FIG. 1) of the non-treatment region B with the treatment region C, the non-treatment region is previously treated. In consideration of the penetration distance from the outer periphery of the region control member 31, it is necessary to adjust the outer peripheral shape of the non-treatment region control member 31 by making it one size larger.

Next, the non-processing area control member 31 and the holding member 11 holding the substrate W are rotated in the same direction and at the same rotation speed,
The chemical liquid L is supplied from the chemical liquid supply nozzle 21 to a position closer to the rotation center in the processing region C. In this embodiment,
By rotating the substrate for processing, the chemical liquid L is caused to flow in the outer peripheral direction of the surface of the substrate W, and the processing region C continuous with the peripheral portion of the substrate W is processed to remove the SiO ₂ film.

The unnecessary SiO ₂ film on the lower surface side of the substrate W can be processed by supplying the chemical liquid L from the chemical liquid supply nozzle 22 in a shower shape.
After the above treatment, a pure water rinse or a drying treatment is performed if necessary.

By the surface treatment apparatus and the surface treatment method using the same of the present embodiment, the non-treatment area control member 31 made of a material that repels the chemical liquid L is formed on at least the peripheral portion D of the non-treatment area B of the substrate W. In a state where the surfaces 31a are arranged facing each other at a predetermined interval so that the chemical liquid L does not enter,
Since the surface treatment of the substrate W is performed with the chemical liquid L, the chemical liquid L
It is possible to prevent the infiltration of the non-treatment area B into the non-treatment area B. Moreover, the surface 31a of the non-processing area control member 31 is formed in the same shape as the non-processing area B of the substrate W, and the surface 31a and the non-processing area B of the substrate W are kept at a predetermined interval while maintaining the outer peripheral shape. Since the treatment is performed in a state where they are aligned with each other, it is possible to prevent the chemical liquid L from entering the non-treatment area B with better controllability.

Further, the non-processing area control member 31 having the above-described structure and the substrate W are processed while rotating at the same rotational speed in the same direction while keeping the outer peripheral shapes in conformity with each other while keeping a predetermined distance. As a result, the substrate W
It is possible to control the invasion of the chemical liquid L in the non-treatment area of the surface of the controllable surface, and to process the rotationally asymmetrical treatment area C. Therefore, only the unnecessary portion of the processed film can be processed (removed by etching), and the yield of chips on the substrate W can be secured.

Further, by rotating the substrate W to perform the treatment, it is possible to efficiently perform the treatment while sufficiently supplying and flowing the chemical liquid L to the treatment region C of the substrate W, thereby increasing the treatment speed. be able to.

In this embodiment, since the non-processing area B is rotationally asymmetric, it is necessary to rotate the non-processing area control member 31 in synchronism with the holding member 11. However, in the case of rotational symmetry, the non-processing area control is performed. The member 31 may not be rotated, and may be rotated at a rotation speed different from the rotation speed of the holding member 11. It is also possible to perform the processing without rotating the substrate W. In that case, the holding member 11 does not have to be a spin chuck, and the chemical solution supply nozzle 21 is in the form of a mist or a plurality of chemical solution supply nozzles are arranged. By doing so, the chemical liquid L is supplied to the entire processing region C.

The chemical liquid L is HFa in this embodiment.
q. However, if it is a chemical liquid capable of treating the SiO ₂ film, HFaq. It is not limited to. When the processed film is other than the SiO ₂ film, a chemical liquid L capable of treating the processed film is used, and the surface tension (contact angle) of the chemical liquid L is used to form the surface 31a of the non-processed region control member 31. To decide.

Further, in this embodiment, the case where the processing region of the substrate W is the peripheral portion of the substrate W has been described. In this case, the non-processing area control member 31 may be arranged at least at the peripheral portion of the non-processing area on the surface of the substrate W. However, when the processing area is not continuous with the peripheral portion of the substrate, for example, the center of the substrate. In the case where the non-processing area control member 31 is distributed in a plurality of locations without including the peripheral portion of the substrate W or the peripheral portion of the substrate W, the non-processing area control member 31 is arranged so as to cover the entire non-processing area. In that case, the position and number of the chemical liquid supply nozzles 21 are adjusted according to the position and shape of the processing region so that the chemical liquid L is supplied to the entire processing region. Then, the chemical liquid L after the treatment is flowed on the non-treatment area control member 31 and discharged, so that only the treatment area having an arbitrary shape is treated with the chemical liquid L even if the treatment area is not continuous with the peripheral portion. be able to.

(Second Embodiment) In this embodiment, the same surface treatment as that of the first embodiment on the upper surface side of the substrate W is taken as an example, and a surface treatment apparatus used for this treatment and a surface treatment method using this apparatus will be described. To do. FIG. 3 is a sectional view of the surface treatment apparatus in this embodiment. The surface treatment apparatus of the present embodiment shown in FIG. 3 is different from the surface treatment apparatus of the first embodiment in that the non-treatment area control member 31 is provided with the gas supply port 41, but other configurations are the same, Description of the same configuration will be omitted.

The gas supply port 41 in the surface treatment apparatus of the present embodiment penetrates, for example, from the upper surface of the non-treatment area control member 31 to the surface 31a, and extends to the surface 31a of the non-treatment area control member 31 and the holding member 11. It is formed so that the gas is supplied to the gap with the held substrate W. Here, since the supplied gas is made to flow from the non-processing area B on the substrate W in the direction of the processing area C with a uniform force, the non-processing area control member 3
The gas supply port 41 is formed at a position closer to the center of 1. In this embodiment, the gas supply port 41 is formed at one place, but a plurality of gas supply ports 41 may be formed.

Next, the surface treatment method of this embodiment using the surface treatment apparatus having the above-mentioned structure will be described. First, the substrate W is held by the holding member 11, the non-processing area control member 31 is arranged as in the first embodiment, and the holding member 11 and the non-processing area control member 31 are rotated at the same speed.

Next, nitrogen gas is supplied from the gas supply port 41 formed in the non-processing area control member 31 to the non-processing area control member 3.
When the nitrogen gas is supplied to the gap between the first surface 31a and the substrate W, the nitrogen gas flows out from the non-processing region B of the substrate W toward the processing region C. In the present embodiment, nitrogen gas is used as the gas to be supplied, but the gas is not limited to this, and other inert gas such as air or argon gas may be used.

Subsequently, by supplying the chemical liquid L from the chemical liquid supply nozzle 21 to a position closer to the center of rotation in the processing region C, the chemical liquid L is caused to flow in the outer peripheral direction of the surface of the substrate W, and the processing region C is processed. , The SiO ₂ film is removed. Here, the chemical liquid L flowing in the processing region C of the substrate W
Is supplied to the entire processing region C without being scattered by the gas pressure, the supply amount of the nitrogen gas is adjusted. When the gas supply amount is large, the surface 31a of the non-processing area control member 31 and the substrate W are
Since the gas vigorously flows out onto the processing area C from the gap between the and, the chemical liquid L on the processing area C may be scattered and not supplied to the entire processing area C. If the gas supply amount is small, the chemical liquid L The controllability for infiltration into the non-treatment area B is reduced. After the above treatment, a pure water rinse or a drying treatment is performed if necessary.

According to the surface treatment apparatus having the above structure and the surface treatment method using the same, in addition to the structure described in the first embodiment, the surface 31a of the non-processed region control member 31 and the substrate W are processed.
Since the chemical liquid L is supplied to the processing region of the substrate W in a state where the nitrogen gas is supplied to the gap between and, it is possible to perform the processing in a state where the gas flows out from the non-processing region B toward the processing region C. The infiltration of the chemical liquid L into the non-treatment area B can be prevented more reliably.

In this embodiment, the surface 31a of the non-processing area control member 31 is made of a material that repels the chemical liquid L, but the surface 31a of the non-processing area control member 31 is the same as in the present embodiment. When the processing is performed in the state where the gas is supplied to the gap between the substrate W and the substrate W, the surface 3 of the non-processing area control member 31 is used.
Even if 1a is not formed of a material that repels the chemical liquid L, it is possible to prevent the chemical liquid from entering the non-treatment area B with good controllability. In this case, the distance between the surface 31a of the non-processing area control member 31 and the substrate W is adjusted to correspond to the gas supply amount so that the chemical liquid L does not enter.

(Third Embodiment) In the present embodiment, the case where both surfaces of the substrate W are treated will be described as an example, and a surface treatment apparatus used for this treatment and a surface treatment method using this apparatus will be described. Here, the upper surface side of the substrate W to be surface-treated is the same as that in the first embodiment, and has a non-treatment area B and a treatment area C. On the other hand, on the lower surface side of the substrate W, as in the upper surface side, the entire surface is coated with the SiO ₂ film, and as shown in FIG. 5, it has a non-processing area E and a processing area F. The non-processing region E on the lower surface side of the substrate W is a circular portion including the central portion of the substrate W, and the processing region F is the peripheral portion of the substrate W other than the non-processing region E, both of which are rotationally symmetric regions.

FIG. 4 is a sectional view of the surface treatment apparatus in this embodiment. The surface processing apparatus of this embodiment has a holding member 13 that holds the substrate W at the central portion on the lower surface side thereof, and a non-processing area control member 31 that is arranged to face the upper surface side of the substrate W held by the holding member 13. The non-processing area control member 32 is arranged to face the lower surface of the substrate W, and the chemical solution supply member 51 is arranged to cover the peripheral edge of the substrate W held by the holding member 13.

The holding member 13 is, for example, a vacuum chuck, and has a substrate holding surface having a vacuum groove. And
By depressurizing the inside of the vacuum groove, the mounted substrate is sucked and held.

The non-treatment area control member 31 is the same as the surface treatment apparatus of the first embodiment, and the explanation of the same construction is omitted.

Further, the other non-processing area control member 32
Is the holding member 13 in the non-processing region E on the lower surface side of the substrate W.
It has a surface 32b having the same shape as the peripheral portion G other than the holding portion by (3), and the configuration other than the shape of this surface 32b is the same as that of the non-processing area control member 31. Non-processing area control member 3
2 is disposed on the outer peripheral portion of the holding member 13 on the lower surface side of the substrate W held by the holding member 13. And
Non-processing area control member 3 formed of a material that repels the chemical liquid L
The second surface 32b can be arranged at an arbitrary interval so as to face the peripheral portion G of the non-processing region E of the substrate W so that the outer peripheral shape matches.

On the other hand, the chemical liquid supply member 51 is placed on the substrate W so as to cover the entire processing region by sandwiching the processing regions C and F which are the peripheral portions on the upper surface side and the lower surface side of the substrate W held by the holding member 13. They are opposed to each other and are arranged at a predetermined interval. Here, the distance between the substrate W and the chemical liquid supply member 51 is equal to the chemical liquid L.
It suffices if they are formed at intervals such that

Then, the chemical liquid supply member 51 is provided with a chemical liquid supply port 61 for supplying the chemical liquid L into a gap between the upper surface of the substrate W and the chemical liquid supply member 61.
A chemical liquid supply port 62 for supplying the chemical liquid L is formed in a gap with the lower surface of the substrate W. Further, the chemical liquid supply member 51 is formed with a chemical liquid discharge port 63 for discharging the processed chemical liquid L, and the chemical liquid L supplied from the chemical liquid supply ports 61 and 62 is held by the holding member 13 on the substrate. W processing area C,
It is configured to be sufficiently supplied and flowable to F.

The surface of the chemical solution supply member 51 is, for example, Si.
Good wettability with the chemical liquid L for treating the O ₂ film
Shall be formed of a material that does not repel. Here, the material that does not repel the chemical liquid L is a material that has a contact angle of less than 90 degrees when the chemical liquid L is dropped. Here, an ethylene / vinyl alcohol copolymer is used as the surface forming material of the chemical liquid supply member, but the material is not limited to this and a material that does not repel the chemical liquid L is preferable.

Next, the surface treatment method of this embodiment using the surface treatment apparatus having the above-mentioned structure will be described. First, the substrate W is held by the holding member 13, and the non-processing area control member 31 a
As described in the first embodiment, are arranged so as to face the non-processing region B on the upper surface of the substrate W so that the outer peripheral shape matches, and are arranged at a preset interval so that the chemical liquid L does not enter. Further, the surface 32b of the non-processing area control member 32 is also opposed to the peripheral portion F of the non-processing area E on the lower surface of the substrate W so as to match the outer peripheral shape, and the chemical liquid L is the same as 31a of the non-processing area control member 31. Adjust so that it does not enter and set it at a preset interval.

Next, the chemical liquid supply member 51 is arranged at a predetermined interval so as to face the substrate W so as to sandwich the processing regions C and F which are the peripheral portions of the upper and lower surfaces of the substrate W and cover the entire processing region. To do.

Then, the chemical liquid L is supplied from the chemical liquid supply ports 61 and 62.
Is supplied, the chemical liquid L flows into the gap between the substrate W and the chemical liquid supply member 51. At this time, a sufficient amount of the chemical liquid L is supplied so that the gap between the substrate W and the chemical liquid supply member 51 is filled with the chemical liquid L. Then, the chemical liquid L is applied to the substrate W and the chemical liquid supply member 51.
Is flowed to process the processing regions C and F of the substrate W to remove the SiO ₂ film. The processed chemical liquid L is discharged from the chemical liquid discharge port 63. After the above treatment, a pure water rinse or a drying treatment is performed if necessary.

According to the surface treatment apparatus and the surface treatment method using the same of the present embodiment, in addition to the configuration of the first embodiment, the chemical liquid supply member 51 formed of a material that does not repel the chemical liquid L is formed on the substrate W. Since the chemical liquid L is disposed so as to cover the entire processing region, the chemical liquid L is not repelled in the gap between the chemical liquid supply member 51 and the substrate W, but is sufficiently supplied and flowed to the processing region of the substrate W. Therefore, the SiO 2 in the processing region on both sides of the substrate W
It is possible to reliably process _two membranes.

Although the processing is performed without rotating the substrate W in this embodiment, it is also possible to perform the processing by rotating it. In this case, the holding member 13 has a rotatable mechanism, and the non-processing area control members 31, 32 and the chemical liquid supply member 51 have a rotatable mechanism in synchronization with the holding member 13.

In this embodiment, the case where the processing regions C and F of the substrate W are continuous with the peripheral portion has been described as an example, but when the processing region of the substrate W is not continuous with the peripheral portion, for example, When the central portion of the substrate W or the peripheral portion of the substrate W is distributed in a plurality of locations without including the peripheral portion, the chemical liquid supply member 51 is set to the entire processing region in accordance with the shape and the number of distributions of the processing region. It is arranged so that it covers.

FIG. 6 shows a modification of the third embodiment. As shown in this figure, a gas supply port 41 is formed in the non-processing area control member 31, and a gas supply port 4 is formed in the non-processing area control member 32.
2 may be formed. The gas supply port 41 formed in the non-processing area control member 31 has the same structure as that of the second embodiment, and the surface 31 a of the non-processing area control member 31.
It is assumed that the gas is supplied to the gap between the substrate W and the substrate W. Further, the gas supply port 42 penetrates, for example, from the upper surface of the non-processing area control member 32 to the surface 32b, and is formed so as to supply gas to the gap between the surface 32b of the non-processing area control member 32 and the substrate W. Has been done.

When processing is performed using this surface processing apparatus, the non-processing area control members 31 and 32 and the chemical liquid supply member 5 are used.
1 is arranged similarly to the third embodiment, and then nitrogen gas is supplied to the gap between the surface 31a of the non-processing area control member 31 and the substrate W from the gas supply port 41 formed in the non-processing area control member 31. The nitrogen gas is supplied from the gas supply port 42 formed in the non-processing area control member 32 to the surface 3 of the non-processing area control member 32.
It is supplied to the gap between 2b and the substrate W.

Next, when the chemical liquid L is supplied from the chemical liquid supply ports 61 and 62, the chemical liquid L flows into the gap between the substrate W and the chemical liquid supply member 51. Here, the supply amount of the gas is adjusted so that the pressure in the gap between the non-processing area control members 31 and 32 and the substrate W is increased by the nitrogen gas. At this time, the nitrogen gas is supplied to the chemical liquid supplying member 5 by increasing the gas supply amount.
It may be allowed to flow into the gap between the substrate 1 and the substrate 1.

Chemical liquid L supplied from the chemical liquid supply ports 61 and 62
To flow into the gap between the substrate W and the chemical liquid supply member 51 to process the processing regions C and F of the substrate W, remove the SiO ₂ film, and discharge the processed chemical liquid L from the chemical liquid discharge port 63. .
After the above treatment, a pure water rinse or a drying treatment is performed if necessary.

According to the surface treatment apparatus having the above structure and the surface treatment method using the same, in addition to the structure described in the third embodiment, the surface 31a of the non-treatment area control member 31 and the non-treatment area control member 31 are provided. By supplying the nitrogen gas to the gap between the surface 32b and the substrate W, the pressure in the gap increases, and the chemical liquid L is prevented from entering the non-treatment regions B and E with good controllability.
The SiO ₂ film in the processing regions C and F can be processed more reliably.

(Fourth Embodiment) In this embodiment, the same surface treatment of the substrate W as in the first embodiment will be described as an example, and a surface treatment apparatus used for this treatment and a surface treatment method using this apparatus will be described. FIG. 7 is a sectional view of a surface treatment apparatus used in the surface treatment method of this embodiment. The surface treatment apparatus shown in this figure includes a holding member 14 for holding the substrate W, a non-processing area control member 31 arranged in a predetermined state with respect to the substrate W held by the holding member 14, and a non-processing area control member 31. And a chemical solution tank 71 for storing

The holding member 14 is provided with a plurality of support pins 15 for pressing the edge of the substrate W and fixing the substrate W, and the upper surface side which is the processing surface of the substrate W and the lower surface side thereof. The holding member 14 is configured so that it can be fixed in a state where it does not come into contact with the holding member 14.

The non-processing area control member 31 has the same structure as the non-processing area control member 31 of the first embodiment. That is, the surface 31a of the non-processing area control member 31 facing the substrate W held by the holding member 14 has the same shape as the non-processing area B of the substrate W and is formed of a material that repels the chemical liquid L used for the processing. It is assumed that

The chemical solution tank 71 is assumed to have the holding member 14 housed therein in advance. Here, it is assumed that the holding member 14 is fixed to the upper end of the support shaft 16 standing upright in the vertical direction with respect to the bottom surface inside the chemical liquid tank 71 so that the substrate W can be held in a horizontal state. Further, the chemical liquid tank 71 can store the chemical liquid L therein,
It is assumed that a drainage pipe, not shown here, is connected.

Next, the surface treatment method of this embodiment using the surface treatment apparatus having the above-mentioned structure will be described. First, the substrate W is held by the holding member 14 installed in the chemical liquid tank 71, and the surface 31a of the non-processing area control member 31 is opposed to the non-processing area B of the substrate W so that the outer peripheral shape matches. By arranging them at arbitrary intervals and moving the non-processing area control member 31 in the vertical direction, the surface 3 of the non-processing area control member 31 is moved.
The distance between 1a and the substrate W is adjusted to a predetermined distance so that the chemical solution does not enter.

Next, the chemical liquid L is poured into the chemical liquid tank 71. At this time, the depth from the liquid surface of the chemical liquid L to the upper surface of the substrate W is adjusted so that the chemical liquid L does not enter the gap between the surface 31a of the non-processing region control member 31 and the substrate W by the liquid pressure. The SiO ₂ film in the processing region C on the substrate W is removed by the injected chemical liquid L. After the above treatment, a pure water rinse or a drying treatment is performed if necessary.

As described above, even in the case of the surface treatment method using the surface treatment apparatus having the above structure, the substrate W held by the holding member 14 is arranged in the same manner as in the first embodiment. Since the non-processing area control member 31 having the configuration is provided, the non-processing area control member 31 is arranged at a predetermined interval so as to prevent the chemical solution from entering the substrate W, whereby the first embodiment Similar processing can be performed.

Further, by immersing in the chemical liquid L poured into the chemical liquid tank 71 for processing, the chemical liquid L is sufficiently supplied to the processing region C of the substrate W, and uniform processing can be performed. Further, since the chemical liquid L can be repeatedly used, it is advantageous in terms of cost. Further, even when the purpose is to process the lower surface side of the substrate, the chemical liquid L can be easily supplied.

Further, in the present embodiment, the surface treatment apparatus in which the holding member 14 is previously stored in the chemical liquid tank 71 has been described, but the surface 31 of the non-treatment area control member 31 is described.
a is kept at a predetermined interval with respect to the substrate W held by the holding member 14, the holding member 14 and the non-processing area control member 3
In the surface treatment apparatus which is provided with a drive device which can be moved in the vertical direction and can be stored in the chemical liquid tank 71 by moving it, the treatment is performed by the following method.

Here, in the state before the processing of the substrate W, the holding member 14 and the non-processing area control member 31 are disposed in the chemical liquid tank 7.
It is supposed to be arranged above 1. First, the substrate W is held by the holding member 14, and the non-processing area control member 31 is arranged as described in this embodiment. On the other hand, the chemical liquid L is stored in the chemical liquid tank 71.

Subsequently, the substrate W held by the holding member 14
The holding member 14 and the non-treatment area control member 31 are moved downward while maintaining a predetermined distance between the surface 31a of the non-treatment area control member 31 and the surface 31a, and the holding member 14 and the non-treatment area control member 31 are immersed in the chemical liquid L stored in the chemical liquid tank 71 , The substrate W is processed.

In this case, the holding member 1 is driven by the driving device.
4 and the non-processing area control member 31 are moved and housed in the chemical liquid tank 71, but the driving method may be omitted and the substrate held by the holding member 14 may be used. W and the surface 31a of the non-processing area control member 31
If the prescribed interval with can be maintained, manually
You may make it immersed in the chemical | medical solution L stored in 1. The surface treatment method as described above can also obtain the same effect as that of the present embodiment.

Further, in this embodiment, the surface treatment apparatus and the surface treatment method for treating the peripheral portion of the semiconductor substrate have been described. However, the present invention is not limited to this, and a semiconductor substrate or a liquid crystal substrate including a non-treatment region It can also be used when performing wet etching of a processed film formed on the surface or performing wet cleaning of the surface of these substrates.

[0074]

As described above, according to the first aspect of the present invention.
According to the surface treatment apparatus described above, in the state where the substrate is held by the holding member, the non-treatment area control member for suppressing the infiltration of the chemical solution is arranged to face at least the peripheral portion of the non-treatment area on the surface of the substrate. Therefore, it is possible to prevent the chemical solution from entering the non-processed area on the surface of the substrate. As a more preferred embodiment, when the surface of the non-treatment area control member facing the substrate is made of a material that repels the chemical liquid, the distance between the surface of the non-treatment area control member facing the substrate and the substrate is set to the chemical liquid and the non-treatment area. By setting the interval that is preset by the surface forming material of the control member so that the chemical solution does not enter, the chemical solution can be repelled and the chemical solution can be prevented from entering the non-processed area on the surface of the substrate. Therefore,
It is possible to prevent the chemical solution from entering the non-treatment area with good controllability without bringing the non-treatment area control member into contact with the non-treatment area of the substrate.

As another preferred embodiment, according to the surface processing apparatus having the gas supply port penetrating the surface of the non-processing region control member facing the substrate, the substrate held by the holding member is On the other hand, it is possible to perform the surface treatment of the substrate while supplying gas to the gap between the surface of the non-treatment area control member arranged at a predetermined interval. Therefore, in the gap between the substrate and the surface of the non-processing area control member, since the gas flows from the non-processing area toward the processing area, without contacting the non-processing area control member with the non-processing area of the substrate, It is possible to controllably prevent the chemical solution from entering the non-treatment area.

Further, in the surface treatment method according to claim 6 of the present invention, a non-treatment area control member for suppressing invasion of the chemical solution is arranged opposite to at least a peripheral portion of the non-treatment area on the surface of the substrate, Since the chemical is supplied to the treatment area on the surface of the substrate to perform the treatment, it is possible to prevent the chemical from entering the non-treatment area, and to treat only the treatment area with the chemical. Such a method improves the controllability of the chemical solution in the non-processed area of the surface of the substrate, and therefore, for example, in an area having an arbitrary shape such as a rotationally asymmetric area, regardless of the shape of the processed area. It becomes possible to reliably perform the treatment with the chemical liquid. Therefore, for example, when an unstable processed film on the peripheral portion of the semiconductor substrate is processed by rotational cleaning, even if the semiconductor substrate has a rotationally asymmetric chip region, this chip region is affected. It becomes possible to process the outer peripheral region of the processing liquid in a wider range without the need for processing, and it is possible to reliably process (etch away) the unstable portion of the processed film at the peripheral edge of the semiconductor substrate. As a result, the chip area can be maximized, the yield of chips on the semiconductor substrate can be increased, and the electrical reliability of the semiconductor chip due to the remaining unstable processed film can be increased. Can be prevented.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an example of a surface treatment apparatus used in a surface treatment method of a first embodiment.

FIG. 2 is a top view of an upper surface side of a substrate used in the surface treatment method of the first embodiment.

FIG. 3 is a cross-sectional view showing an example of a surface treatment apparatus used in the surface treatment method of the second embodiment.

FIG. 4 is a part of a cross-sectional view showing an example of a surface treatment apparatus used in the surface treatment method of the third embodiment.

FIG. 5 is a top view of the lower surface side of a substrate used in the surface treatment method of the third embodiment.

FIG. 6 is a part of a sectional view showing an example of a surface treatment apparatus used in a surface treatment method of a modified example of the third embodiment.

FIG. 7 is a cross-sectional view showing an example of a surface treatment apparatus used in the surface treatment method of the fourth embodiment.

FIG. 8 is a top view of a semiconductor substrate described in the related art.

[Explanation of symbols]

11, 13, 14 ... Holding member, 31, 32 ... Non-processing area control member, 31a ... Surface of non-processing area control member 31, 32
b ... Surface of non-processing region control member 32, 41, 42 ... Gas supply port, 51 ... Chemical liquid supply member, B ... Non-processing region on substrate upper surface side, C ... Processing region on substrate upper surface side, D ... On substrate upper surface side Peripheral part of non-processing area, E ... non-processing area on substrate lower surface side, F ... processing area on substrate lower surface side

Claims (7)

[Claims] 1. A surface treatment apparatus for treating the surface of a substrate with a chemical liquid, comprising: a holding member capable of holding the substrate; and a non-treatment region for suppressing the infiltration of the chemical liquid in the non-treatment region of the surface of the substrate. A surface treatment apparatus comprising a control member, wherein the non-treatment region control member is arranged to face at least a peripheral portion of the non-treatment region in a state where the substrate is held by the holding member. 2. The surface treatment apparatus according to claim 1, wherein a surface of the non-treatment area control member facing the substrate is made of a material that repels the chemical liquid. 3. The surface treatment apparatus according to claim 1, wherein the non-treatment area control member is formed with a gas supply port penetrating to a surface side facing the substrate. . 4. The surface treatment apparatus according to claim 1, wherein the holding member is rotatable, and the non-treatment area control member is rotatable in the same direction and at the same rotation speed in synchronization with the holding member. A surface treatment device characterized by the above. 5. The surface treatment apparatus according to claim 1, wherein the substrate is held by the holding member, and the chemical liquid supply members are arranged at predetermined intervals so as to cover the entire processing region on the surface of the substrate. A surface treatment apparatus comprising: 6. A surface treatment method for treating the surface of a substrate with a chemical liquid, which is a surface treatment method for suppressing the infiltration of the chemical liquid in a non-treatment region of the surface of the substrate, A surface treatment method comprising: supplying a chemical solution to a treatment region on the surface of the substrate to perform treatment in a state where a non-treatment region control member is opposed to at least a peripheral portion of the treatment region. 7. The surface treatment method according to claim 6, wherein the chemical is supplied to the treatment region on the surface of the substrate while the gas is supplied to the gap between the non-treatment region control member and the substrate for treatment. A surface treatment method comprising: