JPH07106469A - Semiconductor device and its manufacture - Google Patents
Semiconductor device and its manufactureInfo
- Publication number
- JPH07106469A JPH07106469A JP24347393A JP24347393A JPH07106469A JP H07106469 A JPH07106469 A JP H07106469A JP 24347393 A JP24347393 A JP 24347393A JP 24347393 A JP24347393 A JP 24347393A JP H07106469 A JPH07106469 A JP H07106469A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- semiconductor element
- sealing resin
- semiconductor device
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置とその製造
方法に係り、特に、放熱用フィンを具備した金属製のキ
ャップとリードフレーム上に実装された半導体素子を同
時に樹脂封止する半導体装置とその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a semiconductor device in which a metal cap equipped with a heat radiation fin and a semiconductor element mounted on a lead frame are simultaneously resin-sealed. And its manufacturing method.
【０００２】[0002]
【従来の技術】近年、電子機器や情報処理装置などの小
型軽量化に伴ない、半導体装置の高密度化・高集積度化
や薄型化が要望され、半導体素子によって発生する熱量
が増加する傾向にある。特に、超々ＬＳＩやバイポーラ
ＬＳＩなどは高集積化・大面化されてチップ面積の大き
い半導体素子となっており、半導体素子の電流増大に伴
ない発熱量が大きく、放熱の必要が生じている。2. Description of the Related Art In recent years, as electronic devices and information processing devices have become smaller and lighter, there has been a demand for higher density, higher integration and thinner semiconductor devices, and the amount of heat generated by semiconductor elements tends to increase. It is in. In particular, ultra-ultra-LSIs, bipolar LSIs, and the like are highly integrated and large-sized semiconductor elements having a large chip area, and the amount of heat generated by the semiconductor elements is large with the increase in current, so that heat radiation is required.
【０００３】そこで、半導体素子から発生した熱を効率
よく放熱するために、例えば、図４に示すような放熱板
を半導体装置の上部に取り付けたものが開発されてい
る。Therefore, in order to efficiently dissipate the heat generated from the semiconductor element, there has been developed, for example, one having a heat dissipation plate as shown in FIG. 4 attached to the upper part of the semiconductor device.
【０００４】すなわち、図４に示す半導体装置におい
て、1 は半導体素子、2 はこの半導体素子1 が絶縁性接
着剤を介して搭載されるアイランド、3 は半導体素子1
を搭載したアイランド2 が実装され半導体素子1 を外部
回路基板に接続するリードフレーム、4 は半導体素子1
の電極パッドとリードフレーム3 を電気的に接続するボ
ンディングワイヤ、および5 はリードフレーム3 の一部
を残して半導体素子1 やボンディングワイヤ4 などを封
止する封止樹脂である。そして、6 は熱伝導率の良い金
属、例えばアルミニウムからなり、アイランド2 の半導
体素子1 が搭載されない側の主面に熱伝導性接着剤を介
して接合され、封止樹脂5 の上部に取り付けられた平板
な放熱板で、この放熱板6 により半導体素子1 で発生し
た熱が効率良く大気中に放熱される。That is, in the semiconductor device shown in FIG. 4, 1 is a semiconductor element, 2 is an island on which the semiconductor element 1 is mounted via an insulating adhesive, and 3 is a semiconductor element 1.
Is a lead frame that connects the semiconductor element 1 to the external circuit board, and the island 2 with the
A bonding wire for electrically connecting the electrode pad to the lead frame 3 and a sealing resin 5 for sealing the semiconductor element 1, the bonding wire 4, etc., while leaving a part of the lead frame 3. 6 is made of a metal having a high thermal conductivity, such as aluminum, and is bonded to the main surface of the island 2 on the side where the semiconductor element 1 is not mounted with a thermal conductive adhesive and is attached to the upper part of the sealing resin 5. The heat generated by the semiconductor element 1 is efficiently dissipated to the atmosphere by the heat dissipation plate 6 which is a flat heat dissipation plate.
【０００５】放熱板6 を半導体装置に取り付けるため
に、封止樹脂5 の上部に取り付け用の凹部5aが形成され
るが、この凹部5aは半導体素子1 などを封止樹脂5 で封
止する封止工程に使用する金型の形状を転写したり、あ
るいは金型形状で作製できない場合には、半導体素子1
などを封止している封止樹脂5 の上部を機械加工するこ
とによって作製される。このようにして作製された凹部
5aに放熱板6 を熱伝導性接着剤によって接着し、放熱板
6 を取り付ける。In order to attach the heat sink 6 to the semiconductor device, a recess 5a for mounting is formed on the upper part of the sealing resin 5. The recess 5a is a seal for sealing the semiconductor element 1 and the like with the sealing resin 5. If the shape of the mold used in the stopping process is transferred or if the mold cannot be manufactured, the semiconductor element 1
It is produced by machining the upper part of the sealing resin 5 that seals the above. Recesses produced in this way
Attach the heat sink 6 to 5a with a heat conductive adhesive and
Install 6.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、金属か
らなる放熱板6 と封止樹脂6 を接着剤で接着した場合に
は、接着剤が介在しているため、効率の高い熱の移動が
行なわれ難く、また、放熱板6 と封止樹脂6 の熱膨張率
が異なるため、繰り返し使用により接着部の接着強度が
低下し、放熱板6 が離脱する虞れがあるという問題があ
った。However, when the heat dissipation plate 6 made of metal and the sealing resin 6 are adhered to each other with an adhesive, the adhesive intervenes so that the heat can be transferred efficiently. This is difficult, and since the heat dissipation plate 6 and the sealing resin 6 have different thermal expansion coefficients, there is a problem that the adhesive strength of the adhesive portion is reduced by repeated use and the heat dissipation plate 6 may be separated.
【０００７】さらには、封止工程で金型の形状を転写し
て凹部5aを作製する場合には、封止樹脂5 の収縮や金型
の熱変形などにより所定の凹部5aの形状を得る上で製造
技術上の熟練度を要し、また、機械加工によって凹部5a
を作製する場合には、加工工程が増えるのみならず、微
細な加工であるため、半導体装置にダメージを与える虞
れがあるという問題があった。Furthermore, when the recess 5a is produced by transferring the shape of the mold in the sealing step, it is necessary to obtain a predetermined shape of the recess 5a by shrinkage of the sealing resin 5 or thermal deformation of the mold. Requires skill in manufacturing technology, and the concave portion 5a can be machined.
In the case of manufacturing, there is a problem that the semiconductor device may be damaged because not only the number of processing steps is increased but also fine processing is performed.
【０００８】本発明は、上記事情に鑑みてなされたもの
で、半導体素子で発生した熱を外気に放熱する放熱部材
が封止樹脂内に配設され、高放熱効果と密着性が確保さ
れた半導体装置とその製造方法を提供することを目的と
する。The present invention has been made in view of the above circumstances, and a heat radiation member for radiating the heat generated in a semiconductor element to the outside air is provided in the sealing resin, and a high heat radiation effect and adhesion are secured. An object of the present invention is to provide a semiconductor device and a manufacturing method thereof.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記目的を達
成するために、リードフレームと、このリードフレーム
上に実装された半導体素子と、この半導体素子を封止す
る封止樹脂と、断面台形状をなし且つ外面側に放熱用フ
ィンが立設され上記半導体素子の上方に配設された金属
製キャップとを備えた半導体装置において、上記金属製
キャップの台形底面部位には網目状部材が設けられてい
ることを特徴とする。In order to achieve the above object, the present invention provides a lead frame, a semiconductor element mounted on the lead frame, a sealing resin for sealing the semiconductor element, and a cross section. In a semiconductor device having a trapezoidal shape and a metal cap disposed above the semiconductor element and having heat dissipation fins erected on the outer surface side, a mesh member is provided at a trapezoidal bottom surface portion of the metal cap. It is characterized by being provided.
【００１０】また、本発明は、半導体素子を封止する封
止樹脂を溶融する工程と、断面台形状の外面側に放熱用
フィンが立設されているとともに台形底面部位に網目状
部材が設けられている金属製キャップを下金型上に載置
する工程と、リードフレーム上に実装されている半導体
素子が下向きになるように上記金属製キャップの上方に
配置する工程と、上金型上部から上記溶融封止樹脂を充
填し上記金属製キャップと上記半導体素子を同時に封止
する工程とを具備したことを特徴とする。Further, according to the present invention, the step of melting the sealing resin for sealing the semiconductor element, the heat radiation fins are provided upright on the outer surface side of the trapezoidal cross section, and the mesh member is provided at the trapezoidal bottom surface portion. Placing the metal cap on the lower mold, placing the semiconductor element mounted on the lead frame above the metal cap so that the semiconductor element mounted on the lead frame faces downward, and upper part of the upper mold. And the step of simultaneously sealing the metal cap and the semiconductor element by filling the molten sealing resin.
【００１１】[0011]
【作用】本発明の半導体装置は放熱用フィンが立設され
ている金属製キャップの台形底面部位には網目状部材が
設けられている構成としたので、金属製キャップが封止
樹脂内に配設されることにより、金属製キャップに立設
されている放熱用フィンによって高い放熱特性が得ら
れ、かつ金属製キャップと封止樹脂との強固な密着が得
られる。In the semiconductor device of the present invention, the metal cap is provided in the encapsulating resin because the trapezoidal bottom surface of the metal cap on which the heat radiation fins are provided is provided with the mesh member. By being provided, high heat dissipation characteristics can be obtained by the heat dissipation fins provided upright on the metal cap, and strong adhesion between the metal cap and the sealing resin can be obtained.
【００１２】また、本発明の半導体装置の製造方法は溶
融封止樹脂で台形底面部位に網目状部材が設けられてい
る金属製キャップと半導体素子を同時に封止する構成と
したので、充填された溶融封止樹脂が網目状部材を介し
て金属製キャップの内面側に浸透することにより、金属
製キャップが封止樹脂内に配設され、封止樹脂との密着
性が向上される。In the method for manufacturing a semiconductor device of the present invention, the metal cap having the trapezoidal bottom surface provided with the mesh-like member and the semiconductor element are simultaneously sealed with the molten sealing resin. The molten sealing resin permeates the inner surface side of the metal cap through the mesh-like member, whereby the metal cap is disposed inside the sealing resin, and the adhesion with the sealing resin is improved.
【００１３】[0013]
【実施例】以下、図面を参照して本発明の実施例を説明
する。図１は本発明の一実施例の半導体装置の断面図、
図２は本発明の一実施例のキャップの斜視図、および図
３は本発明の半導体装置の製造方法の封止工程を示す図
である。Embodiments of the present invention will be described below with reference to the drawings. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention,
FIG. 2 is a perspective view of a cap according to an embodiment of the present invention, and FIG. 3 is a view showing a sealing process of a method for manufacturing a semiconductor device of the present invention.
【００１４】上記図１および図２において、10は熱伝導
率の良い金属、例えばアルミニウムからなり、断面形状
が台形状に形成されたキャップで、このキャップ10の外
面側には放熱フィン11が突出して設けられ、また、キャ
ップ10の台形底面部位には、キャップ10と同様に、アル
ミニウムからなる網目状部材12が配設されている。In FIGS. 1 and 2, reference numeral 10 denotes a cap made of a metal having a high thermal conductivity, for example, aluminum, and having a trapezoidal cross section, and a radiation fin 11 is projected on the outer surface side of the cap 10. Like the cap 10, a mesh member 12 made of aluminum is provided on the trapezoidal bottom surface portion of the cap 10.
【００１５】また、13は半導体素子、14はこの半導体素
子13が絶縁性接着剤を介して搭載されるアイランド、15
は半導体素子13を搭載したアイランド14が実装され半導
体素子13を外部回路基板に接続するリードフレーム、お
よび16は半導体素子13の電極パッドとリードフレーム15
を電気的に接続するボンディングワイヤである。Further, 13 is a semiconductor element, 14 is an island on which the semiconductor element 13 is mounted via an insulating adhesive, and 15
Is a lead frame for mounting the island 14 on which the semiconductor element 13 is mounted and connecting the semiconductor element 13 to an external circuit board; and 16 is an electrode pad of the semiconductor element 13 and the lead frame 15
Is a bonding wire for electrically connecting the.
【００１６】また、17はエポキシ樹脂などからなり、リ
ードフレーム15の一部を残して半導体素子13やボンディ
ングワイヤ16などを封止する封止樹脂であり、この封止
樹脂17の内部に網目状部材12が配設・固定された状態
で、封止樹脂17の上部表面にキャップ10の内面が取り付
けられ、そして、キャップ10の外面側には放熱フィン11
が立設されている。Reference numeral 17 denotes an encapsulating resin made of epoxy resin or the like for encapsulating the semiconductor element 13 and the bonding wires 16 while leaving a part of the lead frame 15. The encapsulating resin 17 has a mesh shape inside. With the member 12 disposed and fixed, the inner surface of the cap 10 is attached to the upper surface of the sealing resin 17, and the heat radiation fin 11 is provided on the outer surface side of the cap 10.
Is erected.
【００１７】上記構成の本発明の一実施例の半導体装置
は、キャップ10の台形底面部位に設けられている網目状
部材12が封止樹脂17内部に配設・固定された状態で、キ
ャップ10が封止樹脂17の上部表面に直接取り付けられ、
しかも放熱フィン11がキャップ10の外面側に立設されて
いることにより、キャップ10と封止部材17との密着性が
強固なものとなり、繰り返し使用によりキャップ10が封
止部材17から離脱することがなくなり、また、接着剤が
介在していないため、効率の高い熱の移動が行なわれ、
放熱フィン11による高放熱効果が達成される。In the semiconductor device having the above-described structure according to the embodiment of the present invention, the cap 10 is provided with the mesh member 12 provided on the trapezoidal bottom surface portion of the cap 10 disposed and fixed inside the sealing resin 17. Is directly attached to the upper surface of the sealing resin 17,
Moreover, since the radiation fins 11 are provided upright on the outer surface side of the cap 10, the adhesion between the cap 10 and the sealing member 17 becomes strong, and the cap 10 can be separated from the sealing member 17 by repeated use. Is eliminated, and since there is no adhesive, heat can be transferred with high efficiency.
A high heat dissipation effect is achieved by the heat dissipation fin 11.
【００１８】次に、上記構成の半導体装置の製造方法の
封止工程について説明する。Next, the sealing step of the method of manufacturing the semiconductor device having the above-mentioned structure will be described.
【００１９】半導体装置の封止工程は、トランスファー
成形法によって行なわれ、まず、リードフレーム15の一
部を残して半導体素子13やボンディングワイヤ16などを
封止する封止樹脂17を溶融しておく。（プロセスP1）。The step of sealing the semiconductor device is performed by a transfer molding method. First, the sealing resin 17 for sealing the semiconductor element 13, the bonding wire 16 and the like is melted while leaving a part of the lead frame 15. . (Process P1).
【００２０】封止樹脂17を溶融する一方で、下金型（不
図示）に放熱フィン11を下、つまり網目状部材12を上に
向けてキャップ10を載置する。キャップ10の載置後、ダ
イボンディングやワイヤボンディングなどが行なわれ、
リードフレーム15に実装されている半導体素子13を下向
き、つまり半導体素子13が網目状部材12に対向している
状態で、下金型において、リードフレーム15をキャップ
10の上方に配置する。（プロセスP2、プロセスP3）。While the sealing resin 17 is melted, the cap 10 is placed on the lower mold (not shown) with the heat radiation fin 11 facing downward, that is, the mesh member 12 facing upward. After mounting the cap 10, die bonding, wire bonding, etc. are performed,
With the semiconductor element 13 mounted on the lead frame 15 facing downward, that is, with the semiconductor element 13 facing the mesh member 12, the lead frame 15 is capped in the lower mold.
Place above 10. (Process P2, Process P3).
【００２１】続いて、下金型に上金型（不図示）を合わ
せ、上金型の上部から上記樹脂溶融工程で溶融されてい
る封止樹脂17を充填し、キャップ10と半導体素子13を同
時に封止樹脂17で封止する。このとき、溶融している封
止樹脂17は網目状部材12を通過してキャップ10の内面ま
では浸透し、網目状部材12が封止樹脂17内部に配設され
固定された状態で硬化する。封止部材17による封止後、
リードフレーム15が切断・折曲されて半導体装置が完成
する。（プロセスP4）。Subsequently, an upper mold (not shown) is fitted to the lower mold, and the sealing resin 17 melted in the resin melting step is filled from the upper part of the upper mold to fill the cap 10 and the semiconductor element 13 with each other. At the same time, the sealing resin 17 is used for sealing. At this time, the molten sealing resin 17 passes through the mesh member 12 and penetrates to the inner surface of the cap 10, and the mesh member 12 is disposed inside the sealing resin 17 and hardened in a fixed state. . After sealing with the sealing member 17,
The semiconductor device is completed by cutting and bending the lead frame 15. (Process P4).
【００２２】ところで、上記した半導体装置の製造方法
によれば、下金型上にキャップ10を載置し、このキャッ
プ10の上方に半導体素子13が実装されているリードフレ
ーム15を配置して、キャップ10と半導体素子13を同時に
封止樹脂17で封止する方法であるので、製造技術上の熟
練度を必要とせず、また、半導体装置にダメージを与え
ることなく、容易に半導体装置を製造することが可能と
なる。By the way, according to the above-described method of manufacturing a semiconductor device, the cap 10 is placed on the lower mold, and the lead frame 15 on which the semiconductor element 13 is mounted is arranged above the cap 10. Since this is a method of simultaneously sealing the cap 10 and the semiconductor element 13 with the sealing resin 17, it is possible to easily manufacture a semiconductor device without requiring skill in manufacturing technology and without damaging the semiconductor device. It becomes possible.
【００２３】なお、上記実施例では、放熱フィン11がキ
ャップ10に垂直に突出して形成されているようにした
が、これに限ることはなく、放熱フィン11は枚葉式のも
のであってもよく、同様の作用効果が得られる。In the above embodiment, the radiation fin 11 is formed so as to vertically project from the cap 10. However, the invention is not limited to this, and the radiation fin 11 may be a single-wafer type. Well, the same effect can be obtained.
【００２４】また、上記実施例では、キャップ10の台形
底面部位に設けられている網目状部材12は全面を網目と
したが、これに限ることはなく、網目状部材12をキャッ
プ10の台形底面部位の周辺部が封止樹脂17内部に配設さ
れ固定されるようなコの字状としてもよい。Further, in the above embodiment, the mesh member 12 provided on the trapezoidal bottom surface portion of the cap 10 has a mesh on the entire surface, but the invention is not limited to this, and the mesh member 12 may be a trapezoidal bottom surface of the cap 10. It may be U-shaped so that the peripheral portion of the portion is disposed and fixed inside the sealing resin 17.
【００２５】また、上記実施では、樹脂封止の際にアイ
ランド14の下方に半導体素子13が位置する状態とした
が、金型の上金型にキャップ10を保持する機構を付加し
て、溶融している封止樹脂17を下金型から充填し、通常
の形態であるアイランド14の上方に半導体素子13が位置
する状態で樹脂封止するようにしてもよい。In the above embodiment, the semiconductor element 13 is positioned below the island 14 at the time of resin sealing, but a mechanism for holding the cap 10 on the upper die of the die is added to melt the element. It is also possible to fill the encapsulating resin 17 from the lower mold and perform resin encapsulation in a state where the semiconductor element 13 is located above the island 14, which is a normal form.
【００２６】また、本発明は上記実施例に限定されるも
のではなく、本発明の要旨を逸脱しない範囲で種々変形
可能であることは勿論である。Further, the present invention is not limited to the above embodiments, and it goes without saying that various modifications can be made without departing from the gist of the present invention.
【００２７】[0027]
【発明の効果】以上詳述したように、本発明の半導体装
置によれば、金属製キャップの台形底面部位に設けられ
ている網目状部材が封止樹脂の内部に配設・固定され、
かつ、封止樹脂の上部に取り付けられている金属製キャ
ップの外面側に放熱用フィンが立設されていることによ
り、金属製キャップと封止部材との密着性を強固にする
ことができ、繰り返し使用による金属製キャップの離脱
の防止が可能となり、また、接着剤が介在していないた
め、効率の高い熱の移動が行なわれ、放熱用フィンによ
る高放熱効果を達成することができる。As described in detail above, according to the semiconductor device of the present invention, the mesh member provided on the trapezoidal bottom surface portion of the metal cap is disposed and fixed inside the sealing resin,
Moreover, since the heat radiation fins are provided upright on the outer surface side of the metal cap attached to the upper portion of the sealing resin, the adhesion between the metal cap and the sealing member can be strengthened, It is possible to prevent the metal cap from coming off due to repeated use, and since no adhesive agent is interposed, highly efficient heat transfer is performed, and a high heat dissipation effect by the heat dissipation fins can be achieved.
【００２８】また、本発明の半導体装置の製造方法によ
れば、下金型上に金属製キャップを載置し、この金属製
キャップの上方に半導体素子が実装されているリードフ
レームを配置して、金属製キャップと半導体素子を同時
に封止樹脂で封止する方法であることにより、製造技術
上の熟練度を必要とせず、また、半導体装置にダメージ
を与えることなく、容易に半導体装置を製造することが
できる。According to the method of manufacturing a semiconductor device of the present invention, the metal cap is placed on the lower mold, and the lead frame on which the semiconductor element is mounted is arranged above the metal cap. Since the method of sealing the metal cap and the semiconductor element with the sealing resin at the same time, the semiconductor device can be easily manufactured without requiring any skill in manufacturing technology and without damaging the semiconductor device. can do.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例の半導体装置の断面図であ
る。FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.
【図２】本発明の一実施例のキャップの斜視図である。FIG. 2 is a perspective view of a cap according to an embodiment of the present invention.
【図３】本発明の半導体装置の製造方法の封止工程を示
す図である。FIG. 3 is a diagram showing a sealing step of the method for manufacturing a semiconductor device of the present invention.
【図４】従来の放熱板を有する半導体装置の断面図であ
る。FIG. 4 is a cross-sectional view of a semiconductor device having a conventional heat sink.
10…キャップ（金属製キャップ） 11…放熱フィン（放熱用フィン） 12…網目状部材 13…半導体素子 15…リードフレーム 17…封止樹脂 10 ... Cap (metal cap) 11 ... Heat dissipation fin (heat dissipation fin) 12 ... Mesh member 13 ... Semiconductor element 15 ... Lead frame 17 ... Sealing resin
Claims (2)
上に実装された半導体素子と、この半導体素子を封止す
る封止樹脂と、断面台形状をなし且つ外面側に放熱用フ
ィンが立設され上記半導体素子の上方に配設された金属
製キャップとを備えた半導体装置において、上記金属製
キャップの台形底面部位には網目状部材が設けられてい
ることを特徴とする半導体装置。1. A lead frame, a semiconductor element mounted on the lead frame, a sealing resin for sealing the semiconductor element, a trapezoidal cross section, and a heat radiation fin standing on the outer surface side. A semiconductor device comprising a metal cap disposed above a semiconductor element, wherein a mesh-like member is provided on a trapezoidal bottom surface portion of the metal cap.
る工程と、断面台形状の外面側に放熱用フィンが立設さ
れているとともに台形底面部位に網目状部材が設けられ
ている金属製キャップを下金型上に載置する工程と、リ
ードフレーム上に実装されている半導体素子が下向きに
なるように上記金属製キャップの上方に配置する工程
と、上金型上部から上記溶融封止樹脂を充填し上記金属
製キャップと上記半導体素子を同時に封止する工程とを
具備したことを特徴とする半導体装置の製造方法。2. A step of melting a sealing resin for sealing a semiconductor element, and a metal in which a heat radiation fin is erected on an outer surface side of a trapezoidal cross section and a mesh member is provided on a trapezoidal bottom surface portion. The step of placing the cap made on the lower mold, the step of placing the semiconductor element mounted on the lead frame above the metal cap so that the semiconductor element mounted on the lead frame faces downward, and the melting seal from the upper part of the upper mold. A method of manufacturing a semiconductor device comprising a step of filling a stop resin and simultaneously sealing the metal cap and the semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24347393A JPH07106469A (en) | 1993-09-30 | 1993-09-30 | Semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24347393A JPH07106469A (en) | 1993-09-30 | 1993-09-30 | Semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07106469A true JPH07106469A (en) | 1995-04-21 |
Family
ID=17104418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24347393A Pending JPH07106469A (en) | 1993-09-30 | 1993-09-30 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07106469A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137760A1 (en) * | 2011-04-04 | 2012-10-11 | ローム株式会社 | Semiconductor device and method for manufacturing semiconductor device |
| US11367704B2 (en) | 2011-04-04 | 2022-06-21 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
-
1993
- 1993-09-30 JP JP24347393A patent/JPH07106469A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137760A1 (en) * | 2011-04-04 | 2012-10-11 | ローム株式会社 | Semiconductor device and method for manufacturing semiconductor device |
| US9093434B2 (en) | 2011-04-04 | 2015-07-28 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US9613927B2 (en) | 2011-04-04 | 2017-04-04 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US10290565B2 (en) | 2011-04-04 | 2019-05-14 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11367704B2 (en) | 2011-04-04 | 2022-06-21 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US11735561B2 (en) | 2011-04-04 | 2023-08-22 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
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