JPH07101815B2 - Ultra-high-frequency voltage controlled oscillator varactor diode mounting structure - Google Patents

Ultra-high-frequency voltage controlled oscillator varactor diode mounting structure

Info

Publication number
JPH07101815B2
JPH07101815B2 JP13700886A JP13700886A JPH07101815B2 JP H07101815 B2 JPH07101815 B2 JP H07101815B2 JP 13700886 A JP13700886 A JP 13700886A JP 13700886 A JP13700886 A JP 13700886A JP H07101815 B2 JPH07101815 B2 JP H07101815B2
Authority
JP
Japan
Prior art keywords
dielectric
varactor diode
controlled oscillator
voltage controlled
ultra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP13700886A
Other languages
Japanese (ja)
Other versions
JPS62293806A (en
Inventor
賢三 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP13700886A priority Critical patent/JPH07101815B2/en
Publication of JPS62293806A publication Critical patent/JPS62293806A/en
Publication of JPH07101815B2 publication Critical patent/JPH07101815B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 技術分野 本発明は超高周波電圧制御発振器のバラクタダイオード
取付け構造に関し、特にバラクタダイオードを使用した
高発振出力(約0.5w以上)の超高周波電圧制御発振器の
バラクタダイオード取付け構造に関する。
TECHNICAL FIELD The present invention relates to a varactor diode mounting structure for an ultra high frequency voltage controlled oscillator, and more particularly to a varactor diode mounting structure for an ultra high frequency voltage controlled oscillator with a high oscillation output (about 0.5 w or more) using a varactor diode. Regarding

従来技術 従来、この種の超高周波電圧制御発振器では、一般にバ
ラクタダイオードで消費される電力が大きいので、外部
への放熱が必要となる。バラクタダイオードは普通の場
合熱がカソード側に流出するので、カソード電極を金属
シャーシにマウントして良好な放熱結果を得ており、ま
た、バラクタダイオードの片方の電極が高周波的に接地
されて使用されるのが良く、カソード電極を金属シャー
シにマウントする場合にはカソード電極が直接接地とな
り、接地の面でも良好な結果を得ている。しかしなが
ら、単一正電圧しかない場合や、回路構成において直流
的にバラクタダイオードの両電極をグランド電位より分
離する必要がある場合には金属シャーシに直接バラクタ
ダイオードのカソード電極をマウントできないため、第
2図に示すような構造にしている。
2. Description of the Related Art Conventionally, in this type of ultra-high frequency voltage controlled oscillator, since the power consumed by the varactor diode is generally large, heat radiation to the outside is required. Since the heat of the varactor diode normally flows out to the cathode side, the cathode electrode is mounted on a metal chassis to obtain a good heat dissipation result, and one electrode of the varactor diode is used by being grounded at high frequency. When the cathode electrode is mounted on a metal chassis, the cathode electrode is directly grounded, and good results are obtained in terms of grounding. However, when there is only a single positive voltage, or when it is necessary to separate both electrodes of the varactor diode from the ground potential in terms of direct current in the circuit configuration, the cathode electrode of the varactor diode cannot be mounted directly on the metal chassis. The structure is as shown in the figure.

第2図において、バラクタダイオード1のカソード電極
はダイオード取付用金属マウント12に埋込まれて半田付
けされており、ダイオード取付け用金属マウント12は絶
縁用マイカ板13と絶縁材14とにより絶縁されて金属シャ
ーシ8に取付けられ、ナット15で金属シャーシ8に固定
されている。また、バラクタダイオード1は導体片16で
回路基板3に接続されている。したがって、バラクタダ
イオード1のカソード電極の高周波的な接地と放熱と
は、絶縁用マイカ板13の形状と誘電率と熱抵抗とによっ
て決まる。ただし、用いる周波数帯がマイクロ波帯なの
で絶縁用マイカ板13の材料も限定され、通常の場合材料
としてマイカが用いられている。
In FIG. 2, the cathode electrode of the varactor diode 1 is embedded in a diode mounting metal mount 12 and soldered, and the diode mounting metal mount 12 is insulated by an insulating mica plate 13 and an insulating material 14. It is attached to the metal chassis 8 and fixed to the metal chassis 8 with nuts 15. The varactor diode 1 is connected to the circuit board 3 by a conductor piece 16. Therefore, the high frequency grounding and heat dissipation of the cathode electrode of the varactor diode 1 are determined by the shape, the dielectric constant and the thermal resistance of the insulating mica plate 13. However, since the frequency band used is the microwave band, the material of the insulating mica plate 13 is also limited, and mica is usually used as the material.

ナット15は電位的にバラクタダイオード1のカソード電
極となっており、バラクタダイオード1のカソード電極
が直接発振器の外部へ出ていることとなる。この場合、
マイクロ波のリークが問題となるので、絶縁材14として
電波吸収体、通常エポアイアンを選定する必要がある。
さらに多くの場合、絶縁用マイカ板13とナット15との間
にエポアイアンを入れる必要がある。
The nut 15 is a cathode electrode of the varactor diode 1 in terms of potential, and the cathode electrode of the varactor diode 1 is directly exposed to the outside of the oscillator. in this case,
Since microwave leakage becomes a problem, it is necessary to select a radio wave absorber, usually an epoiron, as the insulating material 14.
More often, it is necessary to insert an epoiron between the insulating mica plate 13 and the nut 15.

このような従来の超高周波電圧制御発振器では、バラク
タダイオード1の放熱と高周波的な接地とにおいて良好
な結果を得るために形成される構造に、複雑な構造の機
構部品が数多く使われ、コストアップとなるばかりでは
なく、高周波的な接地容量が絶縁用マイカ板13の厚さと
大きさで決まるので、実用的に必要な容量〔数PF(ピコ
ファラッド)以上〕を得るためには形状を大きくしなけ
ればならないという欠点がある。また、バラクタダイオ
ード1のカソード電極が埋込まれているダイオード取付
用金属マウント12が発振器外部へ導かれるような従来の
構造では、絶縁材14に電波吸収体を使用しても外部への
高周波電流のリークが多くの場合に問題となるという欠
点がある。
In such a conventional ultra-high frequency voltage controlled oscillator, many mechanical parts having a complicated structure are used in the structure formed in order to obtain good results in the heat dissipation of the varactor diode 1 and the high frequency grounding, and the cost is increased. Not only that, but the high-frequency grounding capacity is determined by the thickness and size of the insulating mica plate 13. Therefore, in order to obtain the practically necessary capacity [several PF (picofarad) or more], make the shape larger. It has the drawback of having to. Further, in the conventional structure in which the diode mounting metal mount 12 in which the cathode electrode of the varactor diode 1 is embedded is guided to the outside of the oscillator, even if a radio wave absorber is used for the insulating material 14, a high frequency current to the outside is generated. Has the drawback that it often becomes a problem.

発明の目的 本発明は上記のような従来のものの欠点を除去すべくな
されたもので、部品数が少なくて構造も簡単で、コスト
ダウンができ、マイクロ波のリークによる問題も生じな
いという超高周波電圧制御発振器のバラクタダイオード
取付け構造の提供を目的とする。
The object of the present invention is to eliminate the above-mentioned drawbacks of the conventional ones, and it is possible to reduce the number of parts, the structure is simple, the cost can be reduced, and the problem of microwave leakage does not occur. An object is to provide a varactor diode mounting structure for a voltage controlled oscillator.

発明の構成 本発明による超高周波電圧制御発振器のバラクタダイオ
ード取付け構造は、バラクタダイオードを有する超高周
波電圧制御発振器のバラクタダイオード取付け構造であ
って、上下面の一方に回路パターン部を、他方に全面導
体部を夫々有する第1の誘電体と、上下面の双方に全面
導体部を有する第2の誘電体と、前記第1の誘電体に貫
通して設けられた導電性の良熱伝導体とを有し、前記第
1の誘電体と前記第2の誘電体とを夫々の前記全面導体
部同士で貼着して前記第1の誘電体の前記回路パターン
部に前記バラクタダイオードの一方の電極を接続し、か
つ前記第2の誘電体が前記第1の誘電体に比して熱抵抗
が小で、誘電率が大であることを特徴とする。
Structure of the Invention A varactor diode mounting structure for an ultra high frequency voltage controlled oscillator according to the present invention is a varactor diode mounting structure for an ultra high frequency voltage controlled oscillator having a varactor diode, wherein a circuit pattern portion is provided on one of the upper and lower surfaces and a full conductor is provided on the other side. A first dielectric having respective parts, a second dielectric having full-surface conductors on both upper and lower surfaces, and a conductive good heat conductor provided so as to penetrate the first dielectric. The first dielectric and the second dielectric are adhered to each other on the entire surface conductor portions, and one electrode of the varactor diode is attached to the circuit pattern portion of the first dielectric. In addition, the second dielectric has a smaller thermal resistance and a larger dielectric constant than the first dielectric.

実施例 次に、本発明の一実施例について図面を参照して説明す
る。
Embodiment Next, an embodiment of the present invention will be described with reference to the drawings.

第1図(a)は本発明の一実施例を示す平面図、第1図
(b)は第1図(a)のA−A断面図である。図におい
て、バラクタダイオード1のカソード電極は、上面が回
路パターンで、下面が全面導体である誘電体4の回路パ
ターンに接続され、誘電体4は下面の全面導体が上下面
ともに全面導体の誘電体6の全面導体と半田付け、もし
くは接着剤で貼合わされ、誘電体6は金属シャーシ8と
貼合わされて固定されている。また、誘電体4には導電
性の良熱伝導体(たとえば銅の導体)5が貫通して設け
られ、回路パターン上に、片側が接続用導体片7を通っ
て、テフロングラスファイバの回路基板3に設けられた
スルーホール11により接地されているチップコンデンサ
2が設けられ、さらに接続用細線9により回路パターン
とカンツウ型コンデンサ10とが接続されている。
1 (a) is a plan view showing an embodiment of the present invention, and FIG. 1 (b) is a sectional view taken along the line AA of FIG. 1 (a). In the figure, the cathode electrode of the varactor diode 1 is connected to the circuit pattern of the dielectric 4 whose upper surface is a circuit pattern and whose lower surface is a full conductor, and the dielectric 4 is a dielectric whose upper and lower surfaces are all conductive conductors. The entire surface of the conductor 6 is soldered or bonded with an adhesive, and the dielectric 6 is bonded and fixed to the metal chassis 8. Further, a conductive good heat conductor (for example, a copper conductor) 5 is provided so as to penetrate through the dielectric 4, and one side of the Teflon glass fiber circuit board passes through the connecting conductor piece 7 on the circuit pattern. A chip capacitor 2 grounded by a through hole 11 provided in 3 is provided, and a fine circuit wire 9 for connection further connects the circuit pattern and the capacitor capacitor 10.

誘電体4としてテフロングラスファイバ基板を用いた場
合、誘電体6として熱抵抗が小さく、誘電率の大きいア
ルミナセラミック基板を選定すれば、バラクタダイオー
ド1の熱は誘電体4よりも熱抵抗の小さい良熱伝導体5
を通って誘電体6に伝導し、金属シャーシ8に放熱され
る。
When a Teflon glass fiber substrate is used as the dielectric 4, if an alumina ceramic substrate having a low thermal resistance and a high dielectric constant is selected as the dielectric 6, the heat of the varactor diode 1 has a lower thermal resistance than the dielectric 4. Heat conductor 5
It is conducted to the dielectric body 6 through and is radiated to the metal chassis 8.

また、バラクタダイオード1の高周波的な接地は、誘電
体4の誘電率が小さいので、良熱伝導体5を通って誘電
率の大きい誘電体6に高周波的に接地され、誘電体6の
接地容量としてはアルミナセラミック基板を用いること
により数PFは得られる。この接地容量で不足の場合には
チップコンデンサ2により任意の容量を追加することが
できる。
Further, the high-frequency grounding of the varactor diode 1 is such that the dielectric 4 has a small permittivity, so that the varactor diode 1 is grounded to the dielectric 6 having a large permittivity through the good heat conductor 5 at a high frequency, and the grounding capacitance of the dielectric 6 is high. Several PF can be obtained by using an alumina ceramic substrate. If this ground capacity is insufficient, the chip capacitor 2 can add an arbitrary capacity.

バラクタダイオード1のカソード電極は第1図(b)に
示すように外部に出して接続するため、マイクロ波のリ
ークが問題となるが、接続用細線9によるインダクタン
スとカンツウ型コンデンサ10の容量とからローパスフィ
ルタを形成するようにすれば、誘電体4の回路パターン
に接続用細線9が接続されているのでマイクロ波の外部
へのリークは十分に改善される。さらに必要ならば、カ
ンツウ型コンデンサ10に吸収体入りのカンツウ型コンデ
ンサを用いることにより解決される。
Since the cathode electrode of the varactor diode 1 is connected to the outside as shown in FIG. 1 (b), microwave leakage becomes a problem. However, due to the inductance of the connection thin wire 9 and the capacitance of the Kantz-type capacitor 10. If the low-pass filter is formed, the connection fine line 9 is connected to the circuit pattern of the dielectric 4, so that microwave leakage to the outside is sufficiently improved. Further, if necessary, the solution can be solved by using a can-type capacitor containing an absorber as the can-type capacitor 10.

このように、上下面の一方の面が回路パターン部で、多
面が全面導体部の誘電体4と、上下面の両面とも全面導
体部の誘電体6とを夫々の全面導体部同士で貼合わせ、
バラクタダイオード1の一方の電極を回路パターン部に
接続するようにした構造の超高周波電圧制御発振器は、
特に高出力(0.5w以上)で、バラクタダイオード1の片
側を直接接地できない場合には、第2図に示すような従
来例の構造に比べて構造が簡単で小さくなり、部品数も
少なくなるのでコストが低減し、マイクロ波のリークに
よる問題もなくなる。
In this manner, the upper and lower surfaces are the circuit pattern portion, the multi-sided surface is the whole conductor portion of the dielectric 4, and the upper and lower surfaces are the whole surface conductor portion of the dielectric body 6 and the whole surface conductor portions are bonded together. ,
An ultra high frequency voltage controlled oscillator having a structure in which one electrode of the varactor diode 1 is connected to the circuit pattern portion is
Especially when the output is high (0.5w or more) and one side of the varactor diode 1 cannot be directly grounded, the structure is simple and small compared to the structure of the conventional example as shown in FIG. 2, and the number of parts is reduced. The cost is reduced and the problems due to microwave leakage are eliminated.

近年の傾向として、電圧制御発振器の周波数安定度を改
善するためにdigital APC Loop(ディジタル式自動位相
制御ループ)を使用する場合が多いが、この場合にはバ
ラクタダイオード1の両電極は接地しない方が都合よ
く、本実施例はこのような場合に有効となる。
As a recent trend, a digital APC Loop (digital automatic phase control loop) is often used to improve the frequency stability of the voltage controlled oscillator. In this case, both electrodes of the varactor diode 1 should not be grounded. However, this embodiment is effective in such a case.

発明の効果 以上説明したように本発明によれば、上下面の一面が回
路パターン部で、多面が全面導体部の第1の誘電体と、
上下面の両面とも全面導体部の第2の誘電体とを夫々の
全面導体部同士で貼合わせ、第1の誘電体の回路パター
ン部にバラクタダイオードの一方の電極を接続するとと
もに、第2の誘電体に第1の誘電体よりも熱抵抗が小さ
く、誘電率の大きいものを用いることにより、構造が簡
単で小さく、また、部品数も少なくできて、コストダウ
ンができ、マイクロ波のリークによる問題も生じないと
いう効果がある。
EFFECTS OF THE INVENTION As described above, according to the present invention, one surface of the upper and lower surfaces is the circuit pattern portion, and the first and second surfaces are the whole surface conductor portion.
The upper surface and the lower surface of both surfaces are bonded to the second dielectric material of the full-surface conductor portion at each of the full-area conductor portions, and one electrode of the varactor diode is connected to the circuit pattern portion of the first dielectric material, and By using a dielectric having a smaller thermal resistance and a larger permittivity than the first dielectric, the structure is simple and small, the number of parts can be reduced, the cost can be reduced, and microwave leakage can occur. The effect is that no problems will occur.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)は本発明の一実施例を示す平面図、第1図
(b)は第1図(a)のA−A断面図、第2図は従来例
を示す縦断面図である。 主要部分の符号の説明 1……バラクタダイオード 2……チップコンデンサ 4……一方の面が回路パターンで、他方の面が全面導体
の誘電体 5……良熱伝導体 6……両面とも全面導体の誘電体 9……接続用細線 10……カンツウ型コンデンサ
1 (a) is a plan view showing an embodiment of the present invention, FIG. 1 (b) is a sectional view taken along the line AA of FIG. 1 (a), and FIG. 2 is a longitudinal sectional view showing a conventional example. is there. Explanation of symbols of main parts 1 ... Varactor diode 2 ... Chip capacitor 4 ... One side is a circuit pattern and the other side is a conductor of full conductor 5 ... Good heat conductor 6 ... Both sides are full conductor Dielectric 9 …… Thin wire for connection 10 …… Kanto type capacitor

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】バラクタダイオードを有する超高周波電圧
制御発振器のバラクタダイオード取付け構造であって、
上下面の一方に回路パターン部を、他方に全面導体部を
夫々有する第1の誘電体と、上下面の双方に全面導体部
を有する第2の誘電体と、前記第1の誘電体に貫通して
設けられた導電性の良熱伝導体とを有し、前記第1の誘
電体と前記第2の誘電体とを夫々の前記全面導体部同士
で貼着して前記第1の誘電体の前記回路パターン部に前
記バラクタダイオードの一方の電極を接続し、かつ前記
第2の誘電体が前記第1の誘電体に比して熱抵抗が小
で、誘電率が大であることを特徴とする超高周波電圧制
御発振器のバラクタダイオード取付け構造。
1. A varactor diode mounting structure for an ultra-high frequency voltage controlled oscillator having a varactor diode, comprising:
A first dielectric having a circuit pattern portion on one of the upper and lower surfaces and a full conductor portion on the other, a second dielectric having full conductor portions on both upper and lower surfaces, and penetrating the first dielectric. The first dielectric and the second dielectric are adhered to each other by the whole conductor portions, and the first dielectric is provided. One of the electrodes of the varactor diode is connected to the circuit pattern portion, and the second dielectric has a lower thermal resistance and a higher dielectric constant than the first dielectric. The varactor diode mounting structure for the ultra high frequency voltage controlled oscillator.
JP13700886A 1986-06-12 1986-06-12 Ultra-high-frequency voltage controlled oscillator varactor diode mounting structure Expired - Lifetime JPH07101815B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13700886A JPH07101815B2 (en) 1986-06-12 1986-06-12 Ultra-high-frequency voltage controlled oscillator varactor diode mounting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13700886A JPH07101815B2 (en) 1986-06-12 1986-06-12 Ultra-high-frequency voltage controlled oscillator varactor diode mounting structure

Publications (2)

Publication Number Publication Date
JPS62293806A JPS62293806A (en) 1987-12-21
JPH07101815B2 true JPH07101815B2 (en) 1995-11-01

Family

ID=15188652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13700886A Expired - Lifetime JPH07101815B2 (en) 1986-06-12 1986-06-12 Ultra-high-frequency voltage controlled oscillator varactor diode mounting structure

Country Status (1)

Country Link
JP (1) JPH07101815B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5083113B2 (en) * 2008-08-12 2012-11-28 株式会社村田製作所 Non-reciprocal circuit element

Also Published As

Publication number Publication date
JPS62293806A (en) 1987-12-21

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