JP2002134639A - Package for high freaquency electronic component and high freaquency electronic component using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for a high frequency electronic component where a negative influence to a circuit function due to the electric capacity between a lead electrode and a metal cap is suppressed. SOLUTION: A package 22 for the high frequency electronic component includes the substrate 24. In the substrate 24, on the one main surface, lands 26, 27 and a ground electrode 28 are formed, and on the other main surface, lead electrodes 30, 31 and a ground electrode 32 are formed. The ground electrode 28 has a width in the order of the thickness of a side surface portion of the metal cap 38, and is formed above the lead electrodes 30, 31. By means of a plurality of via holes 34 formed in the substrate 24, the land 26, the land 27, and the ground electrode 28 are electrically connected to the lead electrode 30, the lead electrode 31, and the ground electrode 32, respectively. The metal cap 38 is electrically and mechanically connected to the ground electrode 28 by adhesive so as to cover the lands 26, 27.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a high-frequency electronic component package and a high-frequency electronic component using the same.
In particular, the present invention relates to a package for a high-frequency electronic component used for a high-frequency electronic component including a high-frequency electronic component element such as a semiconductor element.

[0002]

2. Description of the Related Art An example of a conventional high-frequency electronic component as a background of the present invention is disclosed in, for example, Japanese Patent Application Laid-Open No. H11-126841. FIG. 11 is an illustrative view showing one example of such a conventional high-frequency electronic component. A high-frequency electronic component 1 shown in FIG. 11 includes a high-frequency electronic component package 2. The high-frequency electronic component package 2 includes a substrate 3. Two lands 4 are formed on one main surface of the substrate 3. Two extraction electrodes 5 are formed on the other main surface of the substrate 3. Two via holes 6 are formed in the substrate 3. These via holes 6 electrically connect the two lands 4 to the two extraction electrodes 5 respectively. Further, two side electrodes 7 are formed on the side surface of the substrate 3 as input / output terminals. These side electrodes 7 are electrically connected to the two extraction electrodes 5, respectively. Further, a metal cap 8 is provided on one main surface of the substrate 3 so as to cover the two lands 4.
Are bonded with an adhesive. A semiconductor element (amplifier) 9 as a high-frequency electronic component element is bonded to the high-frequency electronic component package 2 with an adhesive in the metal cap 8 and at the center of one main surface of the substrate 3. Further, the semiconductor element 9 has two bonding wires 10 on two lands 4.
Are electrically connected. In the high frequency electronic component package 2, a ground electrode 11 is formed on the other main surface of the substrate 3.

[0003]

In the high frequency electronic component 1 shown in FIG. 11 [0006], with the capacitance C ₁ is formed between the lead-out electrode 5 and the ground electrode 11, electricity between the extraction electrode 5 and the metal cap 8 capacitance C ₂ is generated, as shown in the equivalent circuit diagram in FIG. 12, by the capacitance C _2, feedback occurs between between the side electrode 7 or input and output terminals, the semiconductor element 9
Operation in the high frequency range becomes unstable. As a specific example,
The graphs of FIGS. 13 and 14 show the reflection characteristics and gain characteristics of a high-frequency electronic component in which a semiconductor element (amplifier) and a filter are mounted in series on a high-frequency electronic component package having the structure shown in FIG. As shown in the graphs of FIG. 13 and FIG. 14, in the high-frequency electronic component, the reflection at the output end is large, the gain is high, the circuit operation is unstable, and oscillation may occur.

[0004] Therefore, a main object of the present invention is to provide a high-frequency electronic component package in which an adverse effect on the circuit function due to the electric capacitance between the extraction electrode and the metal cap is suppressed. Another object of the present invention is to provide a high-frequency electronic component using a high-frequency electronic component package in which an adverse effect on a circuit function due to a capacitance between an extraction electrode and a metal cap is suppressed.

[0005]

A package for a high-frequency electronic component according to the present invention comprises a substrate, a land formed on one main surface of the substrate, and a ground electrode formed around the land on one main surface of the substrate. And an extraction electrode formed on the substrate other than the one main surface and electrically connected to the land, an input / output terminal electrically connected to the extraction electrode, and electrically and mechanically connected to the ground electrode. This is a package for a high-frequency electronic component including a metal cap. In the high-frequency electronic component package according to the present invention, for example,
A metal cap is electrically connected to the ground electrode near the input / output terminal. In the high-frequency electronic component package according to the present invention, the substrate may be formed in a multilayer structure, and the extraction electrode may be formed inside the substrate. Furthermore, in the high-frequency electronic component package according to the present invention, the insulating layer may be partially formed on the surface of the ground electrode. A high-frequency electronic component according to the present invention is a high-frequency electronic component including the high-frequency electronic component package according to the present invention and a high-frequency electronic component element adhered to one main surface of a substrate and electrically connected to a land. .

In the high-frequency electronic component package and the high-frequency electronic component according to the present invention, similarly to the conventional high-frequency electronic component package and the high-frequency electronic component, an electric capacity may be generated between the extraction electrode and the metal cap. However, in the high-frequency electronic component package and the high-frequency electronic component according to the present invention, a ground electrode is formed above the lead electrode on one main surface of the substrate, and a metal cap is mounted on the ground electrode to electrically connect the ground electrode. , The adverse effect on the circuit function due to such capacitance is suppressed.

The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments of the present invention with reference to the accompanying drawings.

[0008]

FIG. 1 is an exploded perspective view showing an example of a high-frequency electronic component according to the present invention, FIG. 2 is an illustrative view of the high-frequency electronic component, and FIG. 3 is a bottom view of the high-frequency electronic component. It is. The high-frequency electronic component 20 shown in FIG. 1 includes a high-frequency electronic component package 22.

The high-frequency electronic component package 22 includes a rectangular plate-like substrate 24 made of, for example, alumina.

On one main surface of the substrate 24, for example, two rectangular lands 26 and two lands 27 are formed at an interval. Further, on one main surface of substrate 24, for example, a square frame-shaped ground electrode 28 is formed around lands 26 and 27. The ground electrode 28 has a thickness of, for example, 0.30
mm to 0.45 mm.

On the other main surface of the substrate 24, two lands 2
4 from 4 parts corresponding to 6 and 2 lands 27
Two extraction electrodes 30 and two extraction electrodes 31 are respectively formed over the end portions. Further, the substrate 2
A ground electrode 32 is formed on the other main surface of the electrode 4 around the extraction electrodes 30 and 31 at an interval from the extraction electrodes 30 and 31.

A plurality of via holes 34 are formed in the substrate 24. These via holes 34 electrically connect the two lands 26 to the two extraction electrodes 30, respectively, electrically connect the two lands 27 to the two extraction electrodes 31, and connect the ground electrode 28 to the ground electrode 32.
Is electrically connected to

A plurality of side electrodes 36 are provided on the side of the substrate 24.
Is formed. Two of these side electrodes 36 are electrically connected to the two extraction electrodes 30 as input / output terminals, respectively, and the other two of these side electrodes 36 are used as power supply terminals. Extraction electrodes 3
1 are electrically connected to the side electrodes 36, respectively.
The rest are electrically connected to the ground electrode 32 as ground terminals.

On one main surface of the substrate 24, for example, a metal cap 38 having a thickness of 0.15 mm is provided with four lands 26.
Are electrically connected to the ground electrode 28 with a conductive material such as a conductive adhesive, and are mechanically connected with a resin adhesive so as to cover the ground electrode 27 and the like. In this case, the metal cap 38
Is grounded by bonding with a conductive material such as a conductive adhesive at a portion of the ground electrode 28 where the via hole 34 for grounding is formed and a peripheral portion 40 thereof, and is resin-bonded at other portions of the ground electrode 28. Adhesive.

A semiconductor device (amplifier) 42 as a high-frequency electronic component element is bonded to the high-frequency electronic component package 22 with an adhesive in the center of one main surface of the substrate 24 in the metal cap 38. . In addition, the semiconductor element 4
2 is electrically connected to two lands 26 and one land 27 by bonding wires 44, respectively.

In the high-frequency electronic component 20 shown in FIG.
1, a capacitance C ₃ is generated between the extraction electrode 30 and the ground electrode 32, and a capacitance C ₄ is generated between the extraction electrode 30 and the ground electrode 28. electric capacity C ₅ between the extraction electrode 30 and the metal cap 38 occurs. However, in the high-frequency electronic component 20, a ground electrode 28 is formed above the extraction electrode 30 on one main surface of the substrate 24, and a metal cap 38 is mounted on the ground electrode 28 and is electrically connected to the ground electrode 28. since it has, as an equivalent circuit diagram in FIG. 4, adverse effects on such electrical capacitance C ₅ by the circuit function is suppressed. That is, since the capacitance C ₅ is extremely small, the feedback hardly occurs between the between the side electrode 36 or input-output terminal, operating in a high frequency range of the semiconductor element 42 is stabilized. As a specific example, the graphs of FIGS. 5 and 6 show the reflection characteristics and gain characteristics of a high-frequency electronic component in which a semiconductor element (amplifier) and a filter are mounted in series on a high-frequency electronic component package having the structure shown in FIG. . As shown in the graphs of FIG. 5 and FIG. 6, in the high-frequency electronic component, the reflection at the output end is small,
No abnormal gain is observed, the circuit operation is stable, and the possibility of oscillation is low.

Further, in the high-frequency electronic component 20 shown in FIG. 1, it is possible to maintain a shielding property for a circuit including the semiconductor element 42 in the metal cap 38.

FIG. 7 is a schematic plan view showing another example of the high-frequency electronic component according to the present invention. The high-frequency electronic component 20 shown in FIG. 7 is divided into a plurality of parts, in which the ground electrode 28 is partially removed, as compared with the high-frequency electronic component 20 shown in FIG.
Each ground electrode 28 is connected to a ground electrode 32 by a via hole 34.
Is electrically connected to However, a ground electrode 28 is formed above the extraction electrode 30. The metal cap 38 is adhered to the ground electrode 28 and the surface of the substrate 24. Usually, the lands 26 and 27 and the ground electrode 28 on the substrate 24 are plated with gold for bonding wires. In such a case, the high-frequency electronic component 20 shown in FIG.
In this case, the bonding strength between the gold plating layer on the ground electrode 28 and the adhesive may be weak. On the other hand, in the high-frequency electronic component 20 shown in FIG. 7, since the ground electrode 28 is partially removed, the portion where the metal cap 38 is bonded to the gold plating layer is reduced, and the bonding strength of the metal cap 38 is improved. be able to. The high-frequency electronic component 20 shown in FIG.
However, the same operation and effect as those of the high-frequency electronic component 20 shown in FIG.

FIG. 8 is an illustrative view showing still another example of the high-frequency electronic component according to the present invention. The high-frequency electronic component 20 shown in FIG. 8 is different from the high-frequency electronic component 20 shown in FIG. 1 in that the substrate 24 has a two-layer structure, and two extraction electrodes 30 are formed inside the substrate 24. The high-frequency electronic component 20 shown in FIG.
Since the extraction electrode 30 is formed inside the substrate 24, the signal transmission characteristics
Another effect is that it is less affected by the dielectric constant of the mounting substrate (printed circuit board) to which the semiconductor device is to be soldered and the height of the components during surface mounting.

FIG. 9 is an illustrative view showing still another example of the high-frequency electronic component according to the present invention. The high-frequency electronic component 20 shown in FIG. 9 is different from the high-frequency electronic component 20 shown in FIG. 1 in that the portion of the surface of the ground electrode 28 except for the portion where the via hole 34 is formed and its peripheral portion 40 is provided.
That is, an insulating layer 46 made of an insulating material is formed at a place other than the place where the metal cap 38 is grounded. The high-frequency electronic component 20 shown in FIG.
Compared to 0, even if the entire surface of the ground electrode 28 is gold-plated, the portion where the metal cap 38 is directly bonded to the gold plating layer is reduced, and the bonding strength of the metal cap 38 can be improved. It also has the function and effect.

FIG. 10 is an illustrative view showing still another example of the high-frequency electronic component according to the present invention. The high-frequency electronic component 20 shown in FIG. 10 is different from the high-frequency electronic component 20 shown in FIG. 1 in that instead of forming the side electrode 36, input / output terminals,
A plurality of ball-shaped electrodes 4 as a power supply terminal and a ground terminal
8 are formed. The high-frequency electronic component 20 shown in FIG.
Compared to the high-frequency electronic component 20 shown in FIG.
By changing to the ball-shaped electrode 48, another operation and effect that the size can be reduced can be obtained.

In each of the high-frequency electronic components 20 described above, the substrate 24 is formed in a one-layer or two-layer structure. However, the substrate 24 is not limited to a one-layer or two-layer structure, but is formed in a three-layer or more multilayer structure. You may.

Further, the shapes of the substrate 24, the lands 26 and 27, and the ground electrode 28 may be arbitrarily changed.

There are mainly two types of modes in which a resin adhesive is not used for the bonding portion of the metal cap 38, but each has the following problems. 1. Joining with brazing or soldering materials Not suitable for semiconductor devices that have a high joining temperature and are vulnerable to heat. 2. Joining by welding It is necessary to provide a seam ring made of a specific metal (a metal compatible with the material of the metal cap) on the upper surface of the high-frequency electronic component package, so that the manufacturing cost is high and it is not possible to cope with a reduction in price. On the other hand, if a resin adhesive that cures at a relatively low temperature, has good mass productivity, and is inexpensive is used, it is advantageous for high-frequency electronic components.

[0025]

According to the present invention, it is possible to obtain a high-frequency electronic component package in which an adverse effect on the circuit function due to the electric capacitance between the extraction electrode and the metal cap is suppressed. Further, according to the present invention, it is possible to obtain a high-frequency electronic component using a high-frequency electronic component package in which an adverse effect on a circuit function due to a capacitance between an extraction electrode and a metal cap is suppressed.

[Brief description of the drawings]

FIG. 1 is an exploded perspective view showing an example of a high-frequency electronic component according to the present invention.

FIG. 2 is an illustrative view of the high-frequency electronic component shown in FIG. 1;

FIG. 3 is a bottom view of the high-frequency electronic component shown in FIG.

FIG. 4 is an equivalent circuit diagram of the high-frequency electronic component shown in FIG.

FIG. 5 is a graph showing reflection characteristics of a high-frequency electronic component in which a semiconductor element (amplifier) and a filter are mounted in series on the high-frequency electronic component package having the structure shown in FIG.

6 is a graph showing a gain characteristic of a high-frequency electronic component in which a semiconductor element (amplifier) and a filter are mounted in series on a high-frequency electronic component package having the structure shown in FIG.

FIG. 7 is an illustrative plan view of a relevant part showing another example of the high-frequency electronic component according to the present invention.

FIG. 8 is an illustrative view showing still another example of the high-frequency electronic component according to the present invention;

FIG. 9 is an illustrative view showing still another example of the high-frequency electronic component according to the present invention;

FIG. 10 is an illustrative view showing still another example of the high-frequency electronic component according to the present invention;

FIG. 11 is an illustrative view showing one example of a conventional high-frequency electronic component;

FIG. 12 is an equivalent circuit diagram of the high-frequency electronic component shown in FIG.

13 is a graph showing reflection characteristics of a high-frequency electronic component in which a semiconductor element (amplifier) and a filter are mounted in series on a high-frequency electronic component package having the structure shown in FIG.

14 is a graph showing gain characteristics of a high-frequency electronic component in which a semiconductor element (amplifier) and a filter are mounted in series on a high-frequency electronic component package having the structure shown in FIG.

[Description of Signs] 20 High-frequency electronic component 22 High-frequency electronic component package 24 Substrate 26, 27 Land 28 Ground electrode 30, 31 Leader electrode 32 Ground electrode 34 Via hole 36 Side electrode (input / output terminal, ground terminal) 38 Metal cap 40 Peripheral Part 42 Semiconductor element 44, 45 Bonding wire 46 Insulating layer 48 Ball-shaped electrode (input / output terminal, ground terminal)

Claims (5)

[Claims] A substrate, a land formed on one main surface of the substrate, a ground electrode formed around the land on one main surface of the substrate, and a land formed on the substrate other than the one main surface. A lead electrode electrically connected to the lead electrode; an input / output terminal electrically connected to the lead electrode; and a metal cap electrically and mechanically connected to the ground electrode. 2. The high-frequency electronic component package according to claim 1, wherein the metal cap is electrically connected to the ground electrode near the input / output terminal. 3. The electronic component package according to claim 1, wherein the substrate is formed in a multilayer structure, and the lead electrode is formed inside the substrate. 4. The high-frequency electronic component package according to claim 1, wherein an insulating layer is partially formed on a surface of the ground electrode. 5. The high-frequency electronic component package according to claim 1, further comprising: a high-frequency electronic component element adhered to one main surface of the substrate and electrically connected to the land. , High frequency electronic components.