JPH0688233A - Vacuum depositing device - Google Patents
Vacuum depositing deviceInfo
- Publication number
- JPH0688233A JPH0688233A JP23720692A JP23720692A JPH0688233A JP H0688233 A JPH0688233 A JP H0688233A JP 23720692 A JP23720692 A JP 23720692A JP 23720692 A JP23720692 A JP 23720692A JP H0688233 A JPH0688233 A JP H0688233A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum
- vapor deposition
- crucible
- chamber
- replacement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、蒸発るつぼを収容した
真空容器内に、薄板状の被蒸着部材を連続して通過させ
て真空蒸着する真空蒸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus for continuously vapor-depositing a thin plate-shaped member to be vapor-deposited in a vacuum container containing an evaporation crucible.
【０００２】[0002]
【従来の技術】金属からなる蒸着部材を、薄板状の被蒸
着部材に連続的に被膜を形成する装置として真空蒸着装
置がある。2. Description of the Related Art A vacuum vapor deposition apparatus is known as an apparatus for continuously forming a coating on a vapor deposition member made of metal on a thin plate-shaped vapor deposition target member.
【０００３】図３は従来のこの種の真空蒸着装置（ライ
ボルト社製（ドイツ））の外観斜視図であり、図４はそ
の主要部の模式図である。FIG. 3 is an external perspective view of a conventional vacuum evaporation apparatus of this type (manufactured by Leibold Co., Ltd. (Germany)), and FIG. 4 is a schematic view of the main part thereof.
【０００４】図３及び図４において、真空蒸着装置は、
真空容器としての蒸着室（以下蒸着室という）１と、蒸
着室１に接続され蒸着室１を真空にするための真空ポン
プ２と、蒸着室１内に配置され連続的に被膜を形成すべ
き薄板状の被蒸着部材３が巻き付けられた供給ロール４
と、蒸着室１内に設けられ被膜となるべき蒸着材料を収
容する蒸発つるぼ（以下るつぼという）５と、蒸着室１
に取り付けられ、蒸着材料に電子ビームを照射して蒸発
させ、供給ロール４から引き出された被蒸着部材３に蒸
着材料の被膜を形成するための電子銃６と、蒸着済みの
被蒸着部材３を巻き取る巻き取りロール７と、蒸着室１
に挿入取出し可能に設けられ使用済みのるつぼ５ａを交
換するためのるつぼ交換室８とで構成されている。In FIGS. 3 and 4, the vacuum vapor deposition apparatus is
A vapor deposition chamber (hereinafter referred to as a vapor deposition chamber) 1 as a vacuum container, a vacuum pump 2 connected to the vapor deposition chamber 1 for evacuating the vapor deposition chamber 1, and a vapor deposition chamber 1 disposed in the vapor deposition chamber 1 to continuously form a film Supply roll 4 around which a thin plate-shaped member to be vapor-deposited 3 is wound
An evaporation crucible (hereinafter referred to as a “crucible”) 5 that is provided in the vapor deposition chamber 1 and contains a vapor deposition material to be a film; and the vapor deposition chamber 1
The electron gun 6 for irradiating the vapor deposition material with an electron beam to evaporate the vapor deposition material to form a film of the vapor deposition material on the vapor deposition material 3 pulled out from the supply roll 4, and the vapor deposition target material 3 which has been vapor deposited. Winding roll 7 for winding and vapor deposition chamber 1
And a crucible exchange chamber 8 for exchanging a used crucible 5a.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前述し
た従来の真空蒸着装置には以下のような問題点がある。However, the above-mentioned conventional vacuum vapor deposition apparatus has the following problems.
【０００６】(1) 使用中のるつぼが破損または不具合が
生じて交換したり、メンテナンスを行ったりする場合に
蒸着室を大気開放しなければならず、装置規模が大きく
なると再排気時、すなわち休止時に長時間を要する。(1) The vapor deposition chamber must be opened to the atmosphere when the crucible in use is damaged or malfunctions and needs to be replaced or maintenance is performed. Sometimes it takes a long time.
【０００７】(2) るつぼの材質がセラミック系やグラフ
ァイト系の場合、新品のるつぼはガスを多量に吸収して
いるため、そのまま直接蒸着室内に入れた場合、ガス出
しに長時間を要する。(2) When the crucible is made of a ceramic material or a graphite material, a new crucible absorbs a large amount of gas. Therefore, if the crucible is directly placed in the vapor deposition chamber, it takes a long time to release the gas.
【０００８】(3) 蒸着室の外部で新品のるつぼを加熱し
てガス出しを行う場合、ガス出しした後に蒸着室に挿入
するまでの間に大気中のガスを吸収してしまう。(3) When a new crucible is heated outside the vapor deposition chamber to release gas, the gas in the atmosphere is absorbed until the gas is released and before it is inserted into the vapor deposition chamber.
【０００９】(4) るつぼ交換室には、るつぼを加熱する
加熱手段や蒸着材料を供給する装置がないため、ガス出
しや初期溶湯作りができない。(4) Since the crucible exchange chamber has neither heating means for heating the crucible nor a device for supplying the vapor deposition material, it is not possible to discharge gas or make initial molten metal.
【００１０】そこで、本発明の目的は、上記課題を解決
し、蒸発るつぼの交換、メンテナンス時に真空容器を大
気開放することなく、しかも休止時間が短い真空蒸着装
置を提供することにある。Therefore, an object of the present invention is to solve the above problems and to provide a vacuum vapor deposition apparatus which does not open the vacuum container to the atmosphere at the time of replacement and maintenance of the evaporation crucible and has a short down time.
【００１１】[0011]
【課題を解決するための手段】上記目的を達成するため
に本発明は、蒸発るつぼを収容した真空容器内に、薄板
状の被蒸着部材を連続して通過させて真空蒸着する真空
蒸着装置において、真空容器に、真空遮断弁を介して設
けられ、交換用の蒸発るつぼを加熱する加熱手段を有す
る準備室を備えたものである。In order to achieve the above object, the present invention provides a vacuum vapor deposition apparatus for performing vacuum vapor deposition by continuously passing a thin plate-shaped member to be vapor-deposited in a vacuum container containing an evaporation crucible. A vacuum chamber is provided with a preparation chamber provided with a vacuum shutoff valve and having heating means for heating a replacement evaporation crucible.
【００１２】また、本発明の真空蒸着装置は、真空容器
に、真空遮断弁を介して設けられ、使用済みの蒸発るつ
ぼを収容する取出し室を備えたものである。Further, the vacuum vapor deposition apparatus of the present invention comprises a vacuum chamber provided with a take-out chamber which is provided through a vacuum shutoff valve and accommodates a used evaporation crucible.
【００１３】[0013]
【作用】上記構成によれば、真空容器に真空遮断弁を介
して準備室が設けられているので、準備室を大気開放し
ても真空容器の真空状態が保持される。また、準備室が
加熱手段を有するので、真空蒸着作業中に同時に交換用
のるつぼのガス出しを行うことができ、真空蒸着装置を
ガス出しのために休止することなく交換用のるつぼを使
用することができる。According to the above structure, since the preparation chamber is provided in the vacuum container via the vacuum shutoff valve, the vacuum state of the vacuum container is maintained even if the preparation chamber is opened to the atmosphere. In addition, since the preparation chamber has a heating means, it is possible to simultaneously perform degassing of the replacement crucible during the vacuum deposition operation, and use the replacement crucible without stopping the vacuum deposition apparatus for degassing. be able to.
【００１４】[0014]
【実施例】以下、本発明の一実施例を添付図面に基づい
て詳述する。An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
【００１５】図１は本発明の真空蒸着装置の一実施例の
主要部の平面模式図である。FIG. 1 is a schematic plan view of a main portion of an embodiment of the vacuum vapor deposition apparatus of the present invention.
【００１６】同図において真空蒸着装置は、真空容器と
しての蒸着室１０と、この蒸着室１０に接続され蒸着室
１０の真空引きを行う真空ポンプ１１と、蒸着室１０内
を連続的に通過すると共に、被膜を形成すべき薄板状の
被蒸着部材１２と、蒸着室１０内に設けられこの被蒸着
部材１２上に被膜を形成すべき蒸着材料を収容する交換
用のるつぼ１３と、蒸着室１０に取り付けられ蒸着材料
に電子ビームを照射して蒸発させ、被蒸着部材１２に蒸
着材料の被膜を形成するための電子銃１４と、蒸着室１
０の側面に取り付けられ蒸着室１０を開放または遮断す
ることが可能な真空遮断弁１５と、この真空遮断弁１５
に取り付けられ交換用のるつぼ１３及び使用済みのるつ
ぼ１３ａを収容する準備室１６と、準備室１６に接続さ
れ準備室１６を真空にする真空ポンプ１７と、準備室１
６に設けられ交換用のるつぼ１３内に蒸発材料を供給す
る材料供給装置１８と、準備室１６内に設けられ交換用
のるつぼ１３を加熱する加熱手段１９とで構成されてい
る。In the figure, the vacuum vapor deposition apparatus continuously passes through the vapor deposition chamber 10 as a vacuum container, a vacuum pump 11 connected to the vapor deposition chamber 10 for evacuating the vapor deposition chamber 10, and the vapor deposition chamber 10. At the same time, a thin plate-shaped member to be vapor-deposited 12 on which a film is to be formed, a replacement crucible 13 provided in the vapor-deposition chamber 10 for accommodating an evaporation material to be formed with a film, and the vapor-deposition chamber 10 And an electron gun 14 for irradiating a vapor deposition material with an electron beam to evaporate the vapor deposition material to form a film of the vapor deposition material on the vapor deposition target member 12, and the vapor deposition chamber 1.
A vacuum shut-off valve 15 which is attached to the side surface of 0 and can open or shut off the vapor deposition chamber 10;
A preparation chamber 16 attached to the housing for accommodating the replacement crucible 13 and the used crucible 13a; a vacuum pump 17 connected to the preparation chamber 16 for evacuating the preparation chamber 16;
6, a material supply device 18 for supplying the evaporation material into the replacement crucible 13 and a heating means 19 provided in the preparation chamber 16 for heating the replacement crucible 13.
【００１７】準備室１６には、交換用のるつぼ１３を挿
入するための挿入扉と、使用済みのるつぼ１３ａを取出
すための取出し扉が設けられており（共に図示せず）、
通常はこれらの挿入扉や取出し扉は閉じられている。The preparation chamber 16 is provided with an insertion door for inserting the replacement crucible 13 and an ejection door for ejecting the used crucible 13a (both not shown).
Normally, these insertion doors and ejection doors are closed.
【００１８】真空遮断弁１５は、真空蒸着作業中や、準
備室１６内に交換用のるつぼ１３を挿入したり、準備室
１６から使用済みのるつぼ１３ａを取出したり、交換用
のるつぼ１３をガス出しのために加熱したりする時には
蒸着室１０と準備室１６との間を遮断し、準備室１６内
から蒸着室１０内へ交換用のるつぼ１３を移動したり、
蒸着室１０内から準備室１６内へ使用済みのるつぼ１３
ａを移動したりする時には蒸着室１０と準備室１６との
間を開放するようになっている。The vacuum shutoff valve 15 is used to insert the replacement crucible 13 into the preparation chamber 16 during the vacuum deposition operation, to take out the used crucible 13a from the preparation chamber 16, and to replace the replacement crucible 13 with a gas. When heating for taking out, the deposition chamber 10 and the preparation chamber 16 are shut off from each other, and the replacement crucible 13 is moved from the preparation chamber 16 into the deposition chamber 10,
Used crucible 13 from deposition chamber 10 to preparation chamber 16
The space between the vapor deposition chamber 10 and the preparation chamber 16 is opened when moving a.
【００１９】各るつぼ１３、１３ａの、蒸着室１０内と
準備室１６内との間の移動は、図示しない移動機構によ
り行われるようになっている。The movement of each of the crucibles 13 and 13a between the inside of the vapor deposition chamber 10 and the inside of the preparation chamber 16 is performed by a moving mechanism (not shown).
【００２０】被蒸着部材１２には薄板鋼板、金属や樹脂
等の材料からなるフィルムやテープ等が用いられ、蒸着
室１０内に連続的に供給されるようになっている。As the member to be vapor-deposited 12, a thin steel plate, a film or a tape made of a material such as metal or resin is used, and is continuously supplied into the vapor deposition chamber 10.
【００２１】ここで、交換用のるつぼ１３のガス出しを
行う理由について述べる。Now, the reason why the replacement crucible 13 is degassed will be described.
【００２２】例えば、蒸着材料にＡｌ（アルミニウム）
を用いた場合、Ａｌの融点は約６６０℃であるが、蒸発
温度を約１５００℃程度とすると、るつぼ１３のガス出
しには１０００℃以上の温度が望ましい。したがってる
つぼ１３のガス出し時に、るつぼ１３内に蒸着材料が収
容されていると、この蒸着材料が溶解して水等の不純物
が混入してしまう。そこで不純物を除去するためにるつ
ぼ１３を空のまま加熱してガス出しを行うのである。For example, Al (aluminum) is used as the vapor deposition material.
When Al is used, the melting point of Al is about 660 ° C., but when the evaporation temperature is about 1500 ° C., a temperature of 1000 ° C. or higher is desirable for degassing the crucible 13. Therefore, if the vapor deposition material is accommodated in the crucible 13 when the crucible 13 is degassed, the vapor deposition material is dissolved and impurities such as water are mixed. Therefore, in order to remove impurities, the crucible 13 is heated in an empty state and gas is discharged.
【００２３】次に実施例の作用を述べる。Next, the operation of the embodiment will be described.
【００２４】使用中のるつぼ１３ｂを交換または修理す
る場合、真空遮断弁１５を遮断した状態で準備室１６に
交換用のるつぼ１３を挿入し、真空ポンプ１７で真空引
きすると共に加熱手段１９によってこのるつぼ１３を加
熱することによりあらかじめガス出しをしておく。ガス
出し処理の済んだ交換用のるつぼ１３内に、材料供給装
置１８から初期溶湯作りに必要な量だけ蒸着材料を供給
する。交換用るつぼ１３に蒸着材料の供給した後真空遮
断弁１５を開放し、蒸着室１０から準備室１６へ使用済
みのるつぼ１３ａを矢印方向に移動すると共に、準備室
１６から蒸着室１０へ交換用のるつぼ１３を矢印の方向
に移動する。両るつぼ１３、１３ａを移動した後真空遮
断弁１５を遮断し、真空ポンプ１１、電子銃１４等を作
動すると共に、被蒸着部材１２を連続的に搬送して蒸着
プロセスを行う。When the crucible 13b in use is to be replaced or repaired, the replacement crucible 13 is inserted into the preparation chamber 16 with the vacuum shutoff valve 15 shut off, and the vacuum pump 17 vacuums and the heating means 19 Gas is discharged in advance by heating the crucible 13. The vapor deposition material is supplied from the material supply device 18 into the replacement crucible 13 that has been outgassed, in an amount necessary for producing the initial molten metal. After supplying the vapor deposition material to the replacement crucible 13, the vacuum shutoff valve 15 is opened, the used crucible 13a is moved from the vapor deposition chamber 10 to the preparation chamber 16 in the direction of the arrow, and the preparatory chamber 16 is replaced to the vapor deposition chamber 10. The crucible 13 is moved in the direction of the arrow. After moving the two crucibles 13 and 13a, the vacuum shutoff valve 15 is shut off, the vacuum pump 11 and the electron gun 14 are operated, and the deposition target member 12 is continuously transported to perform the deposition process.
【００２５】蒸着室１０に真空遮断弁１５を介して準備
室１６が設けられているので、準備室１６を大気開放し
て交換用のるつぼ１３を挿入したり、使用済みのるつぼ
１３ａを取出しても蒸着室１０内の真空状態が保持され
る。また、準備室１６が加熱手段１９を有するので、真
空蒸着作業中に同時に交換用のるつぼ１３のガス出しを
行うことができ、従来のように真空蒸着装置をガス出し
のために休止することがなく、交換用のるつぼ１３を短
時間に蒸着室１０内で使用することができる。Since the preparatory chamber 16 is provided in the vapor deposition chamber 10 through the vacuum shutoff valve 15, the preparatory chamber 16 is opened to the atmosphere to insert the replacement crucible 13 or take out the used crucible 13a. Also, the vacuum state in the vapor deposition chamber 10 is maintained. Further, since the preparation chamber 16 has the heating means 19, the replacement crucible 13 can be degassed at the same time during the vacuum deposition work, and the vacuum deposition apparatus can be stopped for degassing as in the conventional case. Instead, the replacement crucible 13 can be used in the vapor deposition chamber 10 in a short time.
【００２６】図２は本発明の真空蒸着装置の他の実施例
の平面模式図である。FIG. 2 is a schematic plan view of another embodiment of the vacuum evaporation apparatus of the present invention.
【００２７】同図において図１に示した実施例との相違
点は、蒸着室２０に真空遮断弁２１を介して使用済みの
るつぼ２２を収容する取出し室２３が設けられた点であ
る。In the figure, the difference from the embodiment shown in FIG. 1 is that the vapor deposition chamber 20 is provided with a take-out chamber 23 for accommodating a used crucible 22 via a vacuum shutoff valve 21.
【００２８】この真空蒸着装置内の使用中のるつぼ２２
ａを交換する場合、前述と同様に、真空遮断弁２４を遮
断した状態で準備室２５内に交換用のるつぼ２２ｂを挿
入し、真空ポンプ２６を作動させて真空引きを行うと共
に，加熱手段２７を作動させて交換用のるつぼ２２ｂの
ガス出しを行い、ガス出しが終了したるつぼ２２ｂ内に
材料供給装置２８より蒸発材料を必要量だけ供給してお
く。真空遮断弁２１を開放し、使用済みのるつぼ２２を
蒸着室２０から取出し室２３へ矢印の方向に移動し、取
出し室２３内に使用済みのるつぼ２２が移動した後真空
遮断弁２１を遮断し、真空遮断弁２４を開放して準備室
２５から蒸着室２０へ交換用のるつぼ２２ｂを矢印の方
向に移動させる。交換用のるつぼ２２ｂが蒸着室２０内
に移動した後、真空ポンプ２９、電子銃３０等を作動さ
せて蒸着プロセスを開始する。このとき真空ポンプ３１
を作動して取出し室２３内の真空引きを行う。Crucible 22 in use in this vacuum deposition apparatus
When replacing a, the crucible 22b for replacement is inserted into the preparatory chamber 25 with the vacuum shutoff valve 24 shut off, and the vacuum pump 26 is actuated to evacuate, as well as the heating means 27, as described above. Is operated to discharge gas from the replacement crucible 22b, and a necessary amount of evaporation material is supplied from the material supply device 28 into the crucible 22b which has completed the gas discharge. The vacuum shutoff valve 21 is opened, the used crucible 22 is moved from the vapor deposition chamber 20 to the unloading chamber 23 in the direction of the arrow, and the vacuum shutoff valve 21 is shut off after the used crucible 22 is moved into the unloading chamber 23. The vacuum shutoff valve 24 is opened and the replacement crucible 22b is moved from the preparation chamber 25 to the vapor deposition chamber 20 in the direction of the arrow. After the replacement crucible 22b is moved into the vapor deposition chamber 20, the vacuum pump 29, the electron gun 30 and the like are operated to start the vapor deposition process. At this time, the vacuum pump 31
To evacuate the extraction chamber 23.
【００２９】以上のように本実施例によれば、蒸着室１
０に真空遮断弁１５を介して準備室１６が設けられてい
るので、準備室１６を大気開放しても蒸着室１０の真空
状態が保持される。また、準備室１６が加熱手段１９を
有するので、真空蒸着作業中に同時に交換用のるつぼ１
３のガス出しを行うことができ、真空蒸着装置をガス出
しのために休止することなく交換用のるつぼ１３を使用
することができる。As described above, according to this embodiment, the vapor deposition chamber 1
Since the preparation chamber 16 is provided at 0 via the vacuum shutoff valve 15, the vacuum state of the vapor deposition chamber 10 is maintained even if the preparation chamber 16 is opened to the atmosphere. Further, since the preparation chamber 16 has the heating means 19, the replacement crucible 1 can be simultaneously used during the vacuum deposition operation.
The degassing of No. 3 can be performed, and the replacement crucible 13 can be used without stopping the vacuum deposition apparatus for degassing.
【００３０】尚、本実施例ではるつぼを用いて説明した
が、これに限定されるものではなく、ライナーを用いて
もよい。また、蒸発材料を供給する供給装置が蒸着室に
設けられてもよい。In this embodiment, the crucible is used for description, but the invention is not limited to this, and a liner may be used. Further, a supply device that supplies the evaporation material may be provided in the vapor deposition chamber.
【００３１】[0031]
【発明の効果】以上要するに本発明によれば、次のよう
な優れた効果を発揮する。In summary, according to the present invention, the following excellent effects are exhibited.
【００３２】(1) るつぼの交換時間が大幅に短縮でき
る。(1) The crucible replacement time can be significantly shortened.
【００３３】(2) るつぼの交換、メンテナンスのために
蒸着室を大気開放する必要がなくなり、無駄な真空排気
時間がなくなる。(2) It is no longer necessary to open the vapor deposition chamber to the atmosphere for replacement and maintenance of the crucible, and wasteful evacuation time is eliminated.
【００３４】(3) 準備室が加熱手段を有しているので、
交換前にるつぼのガス出しを行うことができる。(3) Since the preparation room has a heating means,
The crucible can be degassed before replacement.
【００３５】(4) るつぼ加熱後に蒸発材料を入れること
によって、発生ガスによる蒸発材料への不純物混入を防
止することができる。(4) By introducing the evaporation material after heating the crucible, it is possible to prevent impurities from being mixed into the evaporation material by the generated gas.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の真空蒸着装置の一実施例の主要部の平
面模式図である。FIG. 1 is a schematic plan view of a main part of an embodiment of a vacuum vapor deposition device of the present invention.
【図２】本発明の真空蒸着装置の他の実施例の平面模式
図である。FIG. 2 is a schematic plan view of another embodiment of the vacuum vapor deposition device of the present invention.
【図３】従来の真空蒸着装置の外観斜視図である。FIG. 3 is an external perspective view of a conventional vacuum vapor deposition device.
【図４】図３に示した真空蒸着装置の主要部の模式図で
ある。4 is a schematic diagram of a main part of the vacuum vapor deposition apparatus shown in FIG.
１０、２０ 蒸着室 １１、１７、２６、２９、３１ 真空ポンプ １２ 被蒸着部材 １３、２２ｂ 交換用のるつぼ １３ａ、２２ 使用済みのるつぼ １３ｂ、２２ａ 使用中のるつぼ １４、３０ 電子銃 １５、２１、２４ 真空遮断弁 １６ 準備室 １８、２８ 材料供給装置 １９、２７ 加熱手段 ２３ 取出し室 10, 20 Deposition chamber 11, 17, 26, 29, 31 Vacuum pump 12 Deposition member 13, 22b Replacement crucible 13a, 22 Used crucible 13b, 22a Crucible in use 14, 30 Electron gun 15, 21, 24 Vacuum shut-off valve 16 Preparation chamber 18, 28 Material supply device 19, 27 Heating means 23 Extraction chamber
───────────────────────────────────────────────────── フロントページの続き (72)発明者 根橋 清 東京都江東区豊洲三丁目１番15号 石川島 播磨重工業株式会社東二テクニカルセンタ ー内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kiyoshi Nehashi 3-15-15 Toyosu, Koto-ku, Tokyo Ishikawajima Harima Heavy Industries Co., Ltd. Toni Technical Center
Claims (2)
板状の被蒸着部材を連続して通過させて真空蒸着する真
空蒸着装置において、前記真空容器に、真空遮断弁を介
して設けられ、交換用の蒸発るつぼを加熱する加熱手段
を有する準備室を備えたことを特徴とする真空蒸着装
置。1. A vacuum vapor deposition apparatus for performing vacuum vapor deposition by continuously passing a thin plate-shaped member to be vapor-deposited in a vacuum vessel containing an evaporation crucible, the vacuum vessel being provided with a vacuum cutoff valve, A vacuum vapor deposition apparatus comprising a preparation chamber having a heating means for heating a replacement evaporation crucible.
て設けられ、使用済みの蒸発るつぼを収容する取出し室
を備えたことを特徴とする請求項１に記載の真空蒸着装
置。2. The vacuum vapor deposition apparatus according to claim 1, wherein the vacuum container is provided with a take-out chamber which is provided via another vacuum shutoff valve and accommodates a used evaporation crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23720692A JP3257056B2 (en) | 1992-09-04 | 1992-09-04 | Vacuum deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23720692A JP3257056B2 (en) | 1992-09-04 | 1992-09-04 | Vacuum deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0688233A true JPH0688233A (en) | 1994-03-29 |
| JP3257056B2 JP3257056B2 (en) | 2002-02-18 |
Family
ID=17011957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23720692A Expired - Fee Related JP3257056B2 (en) | 1992-09-04 | 1992-09-04 | Vacuum deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3257056B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004111386A (en) * | 2002-08-30 | 2004-04-08 | Semiconductor Energy Lab Co Ltd | Manufacturing device, light emitting device, and preparation method of layer containing organic compound |
| WO2004030416A1 (en) | 2002-08-30 | 2004-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| JP2004327272A (en) * | 2003-04-25 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | Manufacturing device and light emitting device |
| CN100459220C (en) * | 2002-09-20 | 2009-02-04 | 株式会社半导体能源研究所 | Fabrication system and manufacturing method of light emitting device |
| US20090269492A1 (en) * | 2005-11-07 | 2009-10-29 | Il-Ho No | Apparatus and Method for Deposition Organic Compounds, and Substrate Treating Facility With the Apparatus |
| JP2012084812A (en) * | 2010-10-14 | 2012-04-26 | Canon Inc | Processing facility, maintenance device and manufacturing method of article |
| JP2012140671A (en) * | 2010-12-28 | 2012-07-26 | Canon Tokki Corp | Film-forming apparatus |
| US20140245957A1 (en) * | 2003-02-14 | 2014-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| US9559302B2 (en) | 1999-12-27 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
-
1992
- 1992-09-04 JP JP23720692A patent/JP3257056B2/en not_active Expired - Fee Related
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9559302B2 (en) | 1999-12-27 | 2017-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a display device |
| JP2004111386A (en) * | 2002-08-30 | 2004-04-08 | Semiconductor Energy Lab Co Ltd | Manufacturing device, light emitting device, and preparation method of layer containing organic compound |
| WO2004030416A1 (en) | 2002-08-30 | 2004-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| EP1547448A1 (en) * | 2002-08-30 | 2005-06-29 | Sel Semiconductor Energy Laboratory Co., Ltd. | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| US7378133B2 (en) | 2002-08-30 | 2008-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| EP1547448A4 (en) * | 2002-08-30 | 2009-11-04 | Semiconductor Energy Lab | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| CN100459220C (en) * | 2002-09-20 | 2009-02-04 | 株式会社半导体能源研究所 | Fabrication system and manufacturing method of light emitting device |
| US20140245957A1 (en) * | 2003-02-14 | 2014-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| JP4493926B2 (en) * | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | Manufacturing equipment |
| US8034182B2 (en) | 2003-04-25 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming a film and an electroluminescence device |
| US8399362B2 (en) | 2003-04-25 | 2013-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming a film and an electroluminescence device |
| US8778809B2 (en) | 2003-04-25 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming a film and an electroluminescence device |
| JP2004327272A (en) * | 2003-04-25 | 2004-11-18 | Semiconductor Energy Lab Co Ltd | Manufacturing device and light emitting device |
| US20090269492A1 (en) * | 2005-11-07 | 2009-10-29 | Il-Ho No | Apparatus and Method for Deposition Organic Compounds, and Substrate Treating Facility With the Apparatus |
| JP2012084812A (en) * | 2010-10-14 | 2012-04-26 | Canon Inc | Processing facility, maintenance device and manufacturing method of article |
| JP2012140671A (en) * | 2010-12-28 | 2012-07-26 | Canon Tokki Corp | Film-forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3257056B2 (en) | 2002-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5269894A (en) | Method of mounting a target plate to be cooled into a vacuum process chamber, an arrangement of a target plate, a target plate and a vacuum chamber | |
| US3641973A (en) | Vacuum coating apparatus | |
| JPH0688233A (en) | Vacuum depositing device | |
| CN106435516B (en) | Magnetic control evaporation multifunctional winding film coating machine | |
| JP4747802B2 (en) | Vacuum film forming method and vacuum film forming apparatus | |
| US9970096B2 (en) | Intaglio printing plate coating apparatus | |
| CN115466927B (en) | Thin film deposition apparatus and thin film deposition method | |
| JPH02118064A (en) | Vacuum deposition device | |
| US4606929A (en) | Method of ionized-plasma spraying and apparatus for performing same | |
| JP5619028B2 (en) | Vacuum deposition apparatus and maintenance method thereof | |
| JP4227220B2 (en) | Continuous feeding method of evaporation source to vapor deposition chamber in inline vapor deposition system | |
| JP4209981B2 (en) | Film forming material supply device in vacuum evaporation system | |
| JP4982004B2 (en) | Protection plate device | |
| JP3775851B2 (en) | Vapor deposition apparatus and protective film manufacturing method | |
| JPH05287513A (en) | Ion plating device | |
| JP2014218705A (en) | Vacuum suction method, vacuum treatment unit, and sublimation pump | |
| WO2022224929A1 (en) | Multi-layer thin film and method for producing same | |
| JP3569933B2 (en) | Continuous vacuum deposition equipment | |
| JPH0748669A (en) | Film forming device | |
| JP3207889B2 (en) | In-line spatter device and method of operating the same | |
| US4582728A (en) | Process for preparing a titanium carbide film | |
| JPH11200011A (en) | Vacuum deposition device | |
| JPH01234560A (en) | Method and device for supplying low-melting-point material to be vaporized in vapor deposition apparatus | |
| JPS63121654A (en) | Vacuum deposition device | |
| JPH01119663A (en) | Thin film-forming apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |