JP4227220B2 - Continuous feeding method of evaporation source to vapor deposition chamber in inline vapor deposition system - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of feeding an evaporation source to a vapor deposition chamber in an in-line type vapor deposition apparatus mainly used for mass production, such as an organic EL film mass production vapor deposition apparatus, and more particularly to an evaporation source in an in-line type vapor deposition apparatus. The present invention relates to a method for continuously feeding an evaporation source to a vapor deposition chamber in an in-line vapor deposition apparatus for the purpose of improving tact time by continuously feeding the vapor to the vapor deposition chamber.
[0002]
[Prior art]
Conventionally, in the case of continuously forming a film on a large number of substrates (deposits) while maintaining the vacuum in the deposition chamber (generally, continuous deposition is performed 100 to 200 times while maintaining the vacuum), evaporation is performed. Various means have been employed to ensure a large amount of evaporant as a source. For example, the capacity of a crucible or boat used as an evaporation source is increased, and an amount of evaporation material necessary for long-time deposition is previously stored in a crucible or boat having a large capacity or stored in a vacuum in advance. A wire-like, granular evaporative substance was mechanically sent into a crucible or boat to compensate for the evaporative substance reduced by evaporation.
[0003]
[Problems to be solved by the invention]
Each of the above-described conventional methods has the following problems. That is, when increasing the capacity of a crucible or boat used as an evaporation source, the crucible or boat has a lifetime, and the film quality and the There was a problem that the film formation distribution changed. In addition, in the method of feeding wire-like and granular evaporated substances accumulated in advance into a vacuum into a crucible or boat, the structure of the mechanism for performing this feeding tends to be complicated, and therefore the reliability is poor. There was a point.
[0004]
In other words, when continuously forming a film on a large number of substrates (deposits) while maintaining the vacuum in the evaporation chamber, the evaporation material as an evaporation source is reliable without causing changes in film quality and film distribution. There has been no proposal of a method that can supply continuously.
[0005]
[Means for Solving the Problems]
The present invention is a method of feeding a heating resistance type evaporation source in an in-line type vapor deposition apparatus mainly used for mass production into a vapor deposition chamber, and a plurality of load lock chambers each containing a cassette-shaped evaporation source therein, Each evaporation chamber is connected to the deposition chamber via a load lock valve, and the evaporation source is sent and collected sequentially from the load lock chamber in a vacuum state to the deposition chamber in a vacuum state between each load lock chamber and the deposition chamber. By doing so, an evaporation source adjusted to a predetermined amount for each deposition on one substrate in the deposition chamber can be continuously sent from the load lock chamber in the vacuum state to the deposition chamber in the vacuum state. In this way, it is possible to continuously supply the vaporized substance with high reliability when continuously forming films on a large number of substrates while maintaining the vacuum in the vapor deposition chamber.
[0006]
DETAILED DESCRIPTION OF THE INVENTION
According to the method of the present invention, the evaporation source is sent and collected from the load lock chamber in a vacuum state to the vacuum deposition chamber, and is sequentially performed between each load lock chamber and the deposition chamber. The deposition chamber and the plurality of load lock chambers are connected to each other via a load lock valve, so that the cassette-shaped evaporation source used for the deposition operation is transferred from the deposition chamber to the load lock chamber in which it is to be accommodated. The collected cassette-shaped evaporation source is replaced while the new cassette-shaped evaporation source is sent from the other load lock chamber to the deposition chamber and used for a new deposition operation. Is called. At this time, since the load lock chamber is closed between the deposition chamber and the load lock chamber where the exchange operation is performed, the vacuum state of the deposition chamber is maintained, and thus the vacuum state of the deposition chamber is maintained. Then, the continuous evaporation source is fed from the load lock chamber to the vapor deposition chamber and collected, and film formation is continuously performed.
[0007]
Since the evaporation source is exchanged for each deposition on one substrate, it is not necessary to consider the life of the crucible or the boat, and the amount of evaporation substance necessary for one deposition can be determined in a cassette-like manner. Since it is loaded every time by changing the evaporation source (every time for one deposition on one substrate), there is a problem that the film quality and the film distribution change due to the decrease of the evaporated substance during the continuous film formation. Does not occur.
[0008]
In the above, before sending the evaporation source to the evaporation chamber in a vacuum state, the evaporation source is degassed in the load lock chamber, and the evaporation source that has been subjected to the gas releasing process is maintained in a predetermined temperature while being in a vacuum state. If the vapor source is sent to the vapor deposition chamber, the vapor deposition process can be started immediately after the vaporization source is sent to the vapor deposition chamber, and other conditions are met. The efficiency of the film forming operation can be improved.
[0009]
In the above description, it is necessary to provide at least two load lock chambers connected to the vapor deposition chamber. That is, two load lock chambers connected to the vapor deposition chamber are provided, and the feeding and recovery of the evaporation source from the load lock chamber to the vapor deposition chamber are alternately repeated between the two load lock chambers. The evaporation source is sent from the chamber to the deposition chamber to form a film on the substrate, that is, while the deposition operation is being performed, the load lock valve closes the other load lock chamber and the deposition chamber. The evaporation source is exchanged in the atmospheric pressure state, the vacuum of the load lock chamber is evacuated, the gas is discharged from the evaporation source, and the predetermined residual heat state is set and the evaporation source is sent from the one load lock chamber to the vapor deposition chamber. When the vapor deposition operation using is completed, the evaporation source used for the vapor deposition operation is immediately recovered to the one load lock chamber and the load lock valve between the vapor deposition chambers is closed. Then, if the load lock valve between the other load lock chamber and the vapor deposition chamber is opened and the evaporation source that has been waiting is sent to be used for the vapor deposition operation, the two load lock chambers are loaded in this way. It is possible to continuously form a film by continuously feeding the evaporation source to the vapor deposition chamber while maintaining the vacuum of the vapor deposition chamber simply by providing the vapor deposition chamber continuously via the lock valve.
[0010]
【Example】
The preferred embodiments of the present invention will be described with reference to the accompanying drawings.
[0011]
As shown in FIG. 1A, load lock chambers 2 and 6 are provided on both sides of the vapor deposition chamber 1, and load lock valves 4 and 8 are provided between the load lock chambers 2 and 6 and the vapor deposition chamber 1. Are intervened. A substrate holder 5 is provided in the upper part of the vapor deposition chamber 1. As the deposition chamber 1, the load lock chambers 2 and 6, the load lock valves 4 and 8, and the substrate holder 5, those conventionally known can be used.
[0012]
In the present invention, the evaporation source cassette 3 is accommodated in the load lock chamber 2, and the evaporation source cassette 7 is accommodated in the load lock chamber 6, respectively, when the load lock valves 4 and 8 are in the open state. In addition, it is sent into the vapor deposition chamber 1 by a conventionally known transfer means (not shown) and is recovered from the vapor deposition chamber 1.
[0013]
The evaporation source is fed into and recovered from the vapor deposition chamber according to the present invention as follows. The state shown in FIG. 1A shows a state in which the load lock valve 4 is opened and the evaporation source cassette 3 housed in the load lock chamber 2 is sent to the deposition chamber 1 to perform deposition. It is. At this time, the load lock valve 8 is closed, and the evaporation source cassette 7 is exchanged in the load lock chamber 6 on the left side.
[0014]
When the vapor deposition operation in the state shown in FIG. 1A is completed, the evaporation source cassette 3 is recovered into the load lock chamber 2 by the transport means (not shown), and the load lock valve 4 is closed. Immediately thereafter, the load lock valve 8 is opened, and the evaporation source cassette 7 is sent from the load lock chamber 6 to the evaporation chamber 1 by a conveying means (not shown), and the evaporation chamber using the evaporation source cassette 7 as an evaporation source. A new vapor deposition operation within 1 is started.
[0015]
In addition, while the evaporation source cassette 3 used for the vapor deposition operation as described above is collected in the load lock chamber 2 and the evaporation source cassette 7 is subsequently sent from the load lock chamber 6 to the vapor deposition chamber 1, The substrate on which vapor deposition has been performed using the collected evaporation source cassette 3 as an evaporation source is removed from the substrate holder 5 by a conventionally known method while maintaining the vacuum state in the vapor deposition chamber 1, and the newly sent evaporation is performed. A new substrate to be deposited using the source cassette 7 as an evaporation source is mounted on the substrate holder 5.
[0016]
Since the evaporation source cassette 7 sent into the vapor deposition chamber 1 is already in the load lock chamber 6, it is subjected to a gas out process and is maintained at a predetermined temperature, that is, a preheated state. If the other conditions are satisfied, the vapor deposition operation is started immediately.
[0017]
In the vapor deposition operation shown in FIG. 1A, the load lock valve 4 is opened. On the other hand, in the vapor deposition operation shown in FIG. 1B, the load lock valve 8 is opened. Deposition work will be performed. This is because the load lock valves 4 and 8 cannot be closed because of the feeder line of the transfer device, but the evaporation source cassettes 3 and 7 can be deposited without closing the load lock valves 4 and 8. Since the load lock chambers 2 and 6 at the time of feeding into the chamber 1 are kept in a vacuum state, the vacuum state in the deposition chamber 1 is consistently maintained, and the deposition operation is not hindered.
[0018]
In parallel with the vapor deposition operation in the vapor deposition chamber 1 using the evaporation source cassette 7 in the state shown in FIG. 1B as the evaporation source, the replacement operation of the evaporation source cassette 3 collected in the load lock chamber 2 is performed. This operation is performed by opening the door (not shown) of the load lock chamber 2 and setting the load lock chamber 2 to atmospheric pressure.
[0019]
As shown in FIG. 2, the evaporation source cassettes 3 and 7 which are cassette-shaped evaporation sources used in the method of the present invention have a plurality of boats (or crucibles) 10 and 10 assembled together on a plate 9. It is configured. As described above, since the plurality of boats (or crucibles) 10 and 10 are assembled and assembled into a cassette shape, a plurality of boats (or crucibles) are obtained at a time by exchanging the evaporation source cassettes 3 and 7. ) And a plurality of boats (or crucibles) as evaporation sources must be replaced, but the time required for the replacement can be shortened.
[0020]
After the replacement of the evaporation source cassette 3 is completed, the load lock chamber 2 is evacuated to a vacuum, and the gas supply processing of the evaporation source cassette 3 with a new boat and vapor deposition is performed, and the evaporation source cassette 3 is brought to a predetermined temperature. That is, it is maintained in the preheated state, and the completion of the vapor deposition operation in the vapor deposition chamber 1 using the evaporation source cassette 7 as an evaporation source is awaited. This outgassing process and maintaining the preheated state are performed by a conventionally known method.
[0021]
When the vapor deposition operation in the state shown in FIG. 1B is completed, the evaporation source cassette 7 is recovered into the load lock chamber 6 by the transfer means (not shown), and the load lock valve 8 is closed. Immediately after that, the load lock valve 4 is opened, and the evaporation source cassette 3 is sent from the load lock chamber 2 to the evaporation chamber 1 by a conveying means (not shown), and the evaporation chamber using the evaporation source cassette 3 as an evaporation source. 1 starts a new vapor deposition operation, replaces the evaporation source cassette 7 collected in the load lock chamber 6, degasses the newly installed evaporation source cassette 7, maintains the remaining heat state, etc. Work is done.
[0022]
By repeating the above operation, continuous film formation on a large number of substrates (deposits) is performed while the deposition chamber 1 is maintained in a vacuum state.
[0023]
In this embodiment, the load lock chambers 2 and 6 are disposed on both sides of the vapor deposition chamber 1 with the load lock valves 4 and 8 interposed therebetween. However, the present invention is not limited to this embodiment. That is, three or more load lock chambers are provided around the vapor deposition chamber 1 with a load lock valve interposed therebetween, and the vapor deposition operation is performed each time vapor deposition on one substrate in the vapor deposition chamber 1 is completed. It is also possible to sequentially perform the recovery of the evaporation source cassette provided to the load lock chamber to be accommodated and the feeding of a new evaporation source cassette from the other load lock chamber into the vapor deposition chamber 1.
[0024]
As described in this embodiment, even when two load lock chambers are provided, or when three or more load lock chambers are provided, the vapor deposition operation for one substrate in the vapor deposition chamber 1 is completed. In the meantime, if the evaporation source cassette is replaced, and the newly installed evaporation source cassette is out of gas and the operation of maintaining the residual heat is completed, many operations can be performed without waiting for the evaporation source replacement. A continuous film forming operation on the substrate (deposition target) can be performed.
[0025]
【The invention's effect】
According to the method of the present invention, when continuously forming a film on a large number of substrates (deposits) while maintaining the vacuum in the evaporation chamber, the evaporation source can be used without causing a change in film quality and film distribution. Can be continuously supplied in a reliable manner. Moreover, the continuous supply of the evaporating substance is conventionally performed by opening and closing a load lock valve interposed between the vapor deposition chamber and the load lock chamber, and transporting the evaporation source between the vapor deposition chamber and the load lock chamber. This can be achieved with a very simple mechanism using known devices and mechanisms.
[0026]
In addition, the vapor deposition source cassette is exchanged in another load lock chamber closed with the vapor deposition chamber 1 by the load lock valve until the vapor deposition operation for one substrate in the vapor deposition chamber 1 is completed. In addition, a number of substrates (evaporation target) can be obtained without waiting for the evaporation source replacement by waiting for the newly installed evaporation source cassette to perform the gas out process and maintain the remaining heat state. ) Can be performed continuously, and the tact time can be improved.
[Brief description of the drawings]
FIG. 1 is a front view for explaining a preferred embodiment of the present invention, wherein FIG. 1 (a) is a front view showing a state in which vapor deposition is performed using an evaporation source cassette sent from a load lock chamber 2 as an evaporation source; (B) is a front view showing the state in which vapor deposition is performed using the evaporation source cassette sent from the load lock chamber 6 following the state of (a) as an evaporation source.
FIG. 2 is a perspective view of a cassette-shaped evaporation source used in the present invention.
[Explanation of symbols]
1 Deposition chamber 2, 6 Load lock chamber 3, 7 Cassette-shaped evaporation source 4, 8 Load lock valve

Claims (2)

  In a film forming apparatus for forming a film on a substrate disposed in the deposition chamber by disposing an exchangeable evaporation source in a vacuum-capable deposition chamber and heating the evaporation source.
  Each of the vapor deposition chambers is arranged so that the evaporation source can be exchanged, and is connected via a plurality of load lock chambers capable of being vacuumed and a load lock valve,
  One substrate is opened by opening a load lock valve interposed between the one load lock chamber and the vapor deposition chamber from one load lock chamber maintained in a vacuum in the plurality of load lock chambers. While the evaporation source adjusted to the amount of evaporation material required for one evaporation is sent into the evaporation chamber and the evaporation source is heated, film formation is performed on the substrate. ,
  In another load lock chamber of the plurality of load lock chambers, the load lock valve interposed between the other load lock chamber and the vapor deposition chamber is closed and disposed in the other load lock chamber. The evaporation source is replaced
  A film forming apparatus.   A film forming method for forming a film on a substrate disposed in the vapor deposition chamber by disposing an exchangeable vapor deposition source in a vacuum capable vapor deposition chamber and heating the vaporization source,
  Each of the vapor deposition chambers is arranged so that the evaporation source can be exchanged, and is connected via a plurality of load lock chambers capable of being vacuumed and a load lock valve,
  The evaporation source is opened by opening a load lock valve interposed between the one load lock chamber and the vapor deposition chamber from one load lock chamber maintained in a vacuum in the plurality of load lock chambers. While film formation is performed on one substrate by being sent into the deposition chamber and heating the evaporation source,
  In another load lock chamber of the plurality of load lock chambers, the load lock valve interposed between the other load lock chamber and the vapor deposition chamber is closed and disposed in the other load lock chamber. The evaporation source is replaced with an evaporation source that is adjusted to the amount of evaporation material required for one deposition,
  In each of the above, each time one deposition is performed on one substrate, the evaporation source is collected in the one load lock chamber,
  The other load lock chambers in the plurality of load lock chambers that have been exchanged for the evaporation source adjusted to the amount of the evaporation substance required for one deposition are evacuated, and the other load lock chambers and the The evaporation source is sent into the deposition chamber by opening a load lock valve interposed between the deposition chamber and the deposition source is heated to form a film on the next substrate.
  A film forming method characterized by the above.

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