JPH0684873A - Wafer treatment device - Google Patents
Wafer treatment deviceInfo
- Publication number
- JPH0684873A JPH0684873A JP23504492A JP23504492A JPH0684873A JP H0684873 A JPH0684873 A JP H0684873A JP 23504492 A JP23504492 A JP 23504492A JP 23504492 A JP23504492 A JP 23504492A JP H0684873 A JPH0684873 A JP H0684873A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- treatment
- wafer
- chemical
- storage tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はウエーハ処理装置、特に
半導体ウエーハの薬品処理において薬品から発生するガ
スによる危険性及び環境汚染を防止したウエーハ処理装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing apparatus, and more particularly to a wafer processing apparatus which prevents the danger and environmental pollution due to the gas generated from the chemicals in the chemical treatment of semiconductor wafers.
【0002】半導体装置の製造に際しての種々な工程間
で行われるウエーハ処理には、常温或いは加温された酸
やアルカリの溶液が用いられる。そのため、薬品から発
生するガス状の酸とアルカリの間で混触反応が起こり新
たな反応生成物が形成され易く、この反応生成物が析出
堆積することで生ずる排気口の閉塞による危険性や、除
去しきれない上記反応生成物の大気中放出による環境汚
染が問題になっており、酸性のガスとアルカリ性のガス
との混触を避けるウエーハ処理装置の開発が望まれてい
る。[0002] For wafer processing performed between various steps in manufacturing a semiconductor device, a solution of acid or alkali which is heated at room temperature or heated is used. Therefore, a mixed reaction occurs between the gaseous acid and alkali generated from the chemical, and a new reaction product is likely to be formed.There is a risk of clogging of the exhaust port caused by deposition of this reaction product, and removal. Environmental pollution due to atmospheric release of the above reaction products has become a problem, and development of a wafer processing apparatus which avoids contact and contact between acidic gas and alkaline gas is desired.
【0003】[0003]
【従来の技術】従来、半導体装置の製造に際して発生す
る酸性あるいはアルカリ性のガスによる環境汚染を防止
する手段としては、多種多様な製造プロセスにおいて用
いられる多くのウエーハ処理装置を酸とアルカリの系統
に分け、系統別にそれぞれのウエーハ処理装置の排ガス
をまとめ、系統別に水洗浄等の排ガス処理を行うことに
よって、排ガス中の酸分やアルカリ分等の有害成分を除
去した後大気中に放出する方法が用いられていた。2. Description of the Related Art Conventionally, as a means for preventing environmental pollution due to acidic or alkaline gas generated during the manufacture of semiconductor devices, many wafer processing devices used in various manufacturing processes are divided into acid and alkali systems. The method is to collect the exhaust gas of each wafer processing equipment by system and perform exhaust gas treatment such as water washing for each system to remove harmful components such as acid and alkali in exhaust gas and then release them into the atmosphere. It was being done.
【0004】一方、従来ウエーハ処理装置は図4の模式
構成図に示すように、ウエーハ処理室51内に、隣接し
て、例えば硫酸(H2SO4) 等が導入される酸処理槽52と純
水が流通する水洗槽53と例えばアンモニア水(NH4OH) が
導入されるアルカリ処理槽54が順次並んで配置され、処
理室51内における酸処理槽52とアルカリ処理槽54の上部
に、それぞれ末端部に酸ガス用排ガス洗浄装置59若しく
はアルカリガス用排ガス洗浄装置60を備えた酸ガス用排
気ダクト57とアルカリガス用排気ダクト58とが開口して
いる装置構成を有していた。なお図中、61及び62はガス
放出口を示す。On the other hand, in the conventional wafer processing apparatus, as shown in the schematic diagram of FIG. 4, an acid processing tank 52 into which a sulfuric acid (H 2 SO 4 ) or the like is introduced is adjacently provided in a wafer processing chamber 51. A water washing tank 53 in which pure water flows and an alkaline treatment tank 54 into which, for example, ammonia water (NH 4 OH) is introduced are sequentially arranged, and in an upper portion of the acid treatment tank 52 and the alkaline treatment tank 54 in the treatment chamber 51, The exhaust gas cleaning device 59 for an acid gas and the exhaust gas cleaning device 60 for an alkaline gas, each of which has an exhaust duct 57 for an acid gas and an exhaust duct 58 for an alkaline gas, are opened at the ends thereof. In the figure, reference numerals 61 and 62 denote gas discharge ports.
【0005】そしてウエーハの処理は、複数枚の半導体
ウエーハ56をウエーハキャリア55内に並立搭載し、この
ウエーハキャリア55を、ウエーハキャリア55の動線mに
示すように、先ず酸処理槽52内に所定の時間浸漬し、次
いで引上げ移動して水洗槽53内に所定の時間浸漬し、次
いで更に引上げ移動してアルカリ処理槽54内に所定の時
間浸漬する方法で行われる。なお、上記アルカリ処理の
終わった半導体ウエーハ56はキャリア55搭載のまま、図
示しないウエーハ洗浄工程に搬送される。In the wafer processing, a plurality of semiconductor wafers 56 are mounted side by side in a wafer carrier 55, and the wafer carrier 55 is first placed in an acid treatment tank 52 as shown by a flow line m of the wafer carrier 55. It is carried out by a method of dipping for a predetermined time, then pulling it up and moving it, soaking it in the washing tank 53 for a predetermined time, then further pulling it up and moving it and soaking it in the alkali treatment tank 54 for a predetermined time. The semiconductor wafer 56 that has been subjected to the alkali treatment is transferred to a wafer cleaning step (not shown) with the carrier 55 still mounted.
【0006】[0006]
【発明が解決しようとする課題】しかし上記のように、
同一のウエーハ処理室51内に、上部が開放された酸処理
槽槽52とアルカリ処理槽54が配置される従来のウエーハ
処理装置においては、酸処理槽槽52とアルカリ処理槽54
の上部にそれぞれ専用の酸ガス用排気ダクト57及びアル
カリガス用排気ダクト58が設けられていても、実際には
それぞれのダクトに図示しない多種多様なウエット処理
のダクトが接続されるために排気ダクト57、58間の排気
量のバランスがくずれ、そのために酸ガス用排気ダクト
57にアルカリガスが流入したり、またアルカリガス用排
気ダクト58に酸ガスが流入する場合が生ずる。また、ウ
エーハ56を搭載したウエーハキャリア55を移動する際に
は、表面積の大きいウエーハ56の表面及びウエーハキャ
リア55に付着した酸或いはアルカリ液が蒸発して多量の
蒸発ガスがウエーハ処理室51内に拡がるために、酸ガス
及びアルカリガスがそれぞれ専用以外の排気ダクト内へ
多量に流入するという事態を生ずる。[Problems to be Solved by the Invention] However, as described above,
In a conventional wafer processing apparatus in which the same wafer processing chamber 51 is provided with an acid treatment tank tank 52 and an alkali treatment tank 54 whose upper parts are opened, the acid treatment tank tank 52 and the alkali treatment tank 54 are
Even if a dedicated exhaust duct 57 for acid gas and an exhaust duct 58 for alkali gas are provided in the upper part of the exhaust duct, various ducts for wet processing (not shown) are actually connected to the respective ducts so that the exhaust ducts are exhausted. The exhaust gas balance between 57 and 58 becomes unbalanced, and therefore the exhaust duct for acid gas
In some cases, alkali gas may flow into 57, or acid gas may flow into the exhaust duct 58 for alkali gas. Further, when the wafer carrier 55 having the wafer 56 mounted thereon is moved, the surface of the wafer 56 having a large surface area and the acid or alkali liquid adhering to the wafer carrier 55 evaporates, and a large amount of evaporative gas enters the wafer processing chamber 51. Due to the spread, a large amount of acid gas and alkali gas will flow into the exhaust ducts other than the dedicated ones.
【0007】そのため、上記従来のウエーハ処理装置に
おいては、それぞれの排気ダクト57、58内で酸性ガスと
アルカリ性ガスとの混触反応を生じ、反応生成物が排気
ダクト57、58内に析出堆積して安全性を損なうダクト詰
まりを生じたり、また反応生成物の排ガス洗浄装置59及
び60による除去不良により環境汚染を発生させるという
問題があった。Therefore, in the conventional wafer processing apparatus described above, a contact reaction between the acidic gas and the alkaline gas occurs in the exhaust ducts 57 and 58, and reaction products are deposited and deposited in the exhaust ducts 57 and 58. There are problems that the duct is clogged, which impairs safety, and that the reaction products are not properly removed by the exhaust gas cleaning devices 59 and 60, thereby causing environmental pollution.
【0008】そこで本発明は、酸性ガスとアルカリ性ガ
スの混触を防止するウエーハ処理装置を提供し、ウエー
ハ処理に際しての安全性の確保及び環境汚染の防止を図
ることを目的とする。[0008] Therefore, an object of the present invention is to provide a wafer processing apparatus which prevents the acid gas and the alkaline gas from being mixed with each other, and to secure safety during wafer processing and prevent environmental pollution.
【0009】[0009]
【課題を解決するための手段】上記課題の解決は、開閉
自在な試料挿入口を有する蓋部に上部が覆われ、該蓋部
から所定寸法の空間部を隔てた高さまでオーバフロー方
式により処理液が満たされる密閉型のウエーハ処理槽
と、該空間部内に末端部が開口する排気ダクトと、該処
理槽内に供給する処理薬品を収容し且つ該排気ダクトに
接続された密閉型の薬品保管タンクと、該処理槽内に供
給する共洗い液を収容し且つ該排気ダクトに接続された
密閉型の共洗い液保管タンクと、該処理薬品及び共洗い
液を該薬品保管タンク或いは共洗い液保管タンクから処
理槽内へ供給し、且つ該処理槽内を循環させ、更に該処
理槽内から該薬品保管タンク或いは共洗い液タンク内へ
回収する機能を有する薬液供給回路と、該薬液供給回路
内に挿入されたフィルターと、該処理槽に純水を流通せ
しめる給水手段と、該処理槽からの排水手段と、該薬品
保管タンクへの新薬品の供給手段と、該排気ダクトの基
部に配設された排ガス洗浄装置とを具備し、ウエーハの
薬品処理から水洗までが同一処理槽内でなされる本発明
によるウエーハ処理装置、若しくは上記構造を有する酸
処理用の第1のウエーハ処理装置とアルカリ処理用の第
2のウエーハ処理装置とを同一処理室内に有してなる本
発明によるウエーハ処理装置によって達成される。To solve the above-mentioned problems, the upper part is covered with a lid having an openable / closable sample insertion port, and a processing liquid is overflowed to a height separating a space of a predetermined size from the lid. A sealed wafer processing tank, an exhaust duct having an end opening in the space, and a sealed chemical storage tank containing processing chemicals to be supplied into the processing tank and connected to the exhaust duct And a closed type co-washing liquid storage tank that stores the co-washing liquid to be supplied into the treatment tank and is connected to the exhaust duct, and the treatment chemicals and the co-washing liquid are the chemical storage tank or the co-washing liquid storage In the chemical liquid supply circuit, a chemical liquid supply circuit having a function of supplying from the tank into the treatment tank, circulating the inside of the treatment tank, and further collecting from the treatment tank into the chemical storage tank or the co-washing liquid tank Inserted into , A water supply means for circulating pure water into the treatment tank, a drainage means from the treatment tank, a means for supplying a new chemical to the chemical storage tank, and an exhaust gas cleaning disposed at the base of the exhaust duct. A wafer processing apparatus according to the present invention, which is equipped with an apparatus, from the chemical treatment of wafers to washing with water in the same processing tank, or the first wafer processing apparatus for acid treatment and the second wafer treatment for alkali having the above structure. This is achieved by the wafer processing apparatus according to the present invention, which has the same wafer processing apparatus as described above in the same processing chamber.
【0010】[0010]
【作用】図1は本発明の原理説明用のウエーハ処理装置
要部構成図である。図中の、2は密閉型ウエーハ処理槽
で、蓋部2Aに排気ダクト3の第1の端部3Aが接続されお
り、且つ前記蓋部2Aには開閉自在のウエーハ出し入れ口
4が設けられる。また、5は密閉型薬品保管タンクで、
処理薬品が収容され、上部には前記排気ダクト3の第3
の端部3Cが接続される。また、6は密閉型共洗い液保管
タンクで前記処理薬品と同一の薬品からなる共洗い液が
収容され、上部には前記排気ダクト3の第2の端部3Bが
接続される。また、7は洗浄水を供給する給水管で、
7′は薬品保管タンクへ新薬品供給管、8は排水管、9
は排ガス洗浄装置である。 そして、本発明のウエーハ
処理装置においては、前記ウエーハ処理槽2と前記薬品
保管タンク5及び前記共洗い液保管タンク6とが、供給
・循環・回収が可能なフィルター11を内蔵した薬液供給
回路10を介して接続された要部の構成を有し、ウエーハ
の薬品処理から水洗までが一括して同一の密閉型処理槽
2内で行われる。FIG. 1 is a block diagram of the essential parts of a wafer processing apparatus for explaining the principle of the present invention. In the figure, 2 is a closed type wafer processing tank, which has a lid 2A to which a first end 3A of an exhaust duct 3 is connected, and the lid 2A is provided with an openable / closable wafer loading / unloading port 4. In addition, 5 is a closed chemical storage tank,
Processing chemicals are stored in the upper part of the exhaust duct 3
End 3C of is connected. Further, 6 is a closed type co-washing liquid storage tank in which a co-washing liquid containing the same chemical as the treatment chemical is stored, and the second end 3B of the exhaust duct 3 is connected to the upper portion. Further, 7 is a water supply pipe for supplying washing water,
7'is a new chemical supply pipe to the chemical storage tank, 8 is a drain pipe, 9
Is an exhaust gas cleaning device. Then, in the wafer processing apparatus of the present invention, the wafer processing tank 2, the chemical storage tank 5, and the co-washing liquid storage tank 6 have a chemical solution supply circuit 10 in which a filter 11 capable of supply, circulation and recovery is built in. The wafer is chemically connected to the wafer and the wafer is washed with water in the same hermetically sealed processing tank 2 collectively.
【0011】このように、本発明のウエーハ処理装置に
おいては、ウエーハの薬品処理が排気ダクト3(3A)の接
続された密閉型ウエーハ処理槽2内で行われ、且つ処理
薬品及び共洗い液の保管タンク5及び6も密閉型でそれ
ぞれ前記排気ダクト3(3B 或いは3C)に接続されている
ので、ウエーハの薬品処理中及び処理容器の共洗い中に
装置から外部に漏洩する薬品のガスは殆どなくなる。ま
た、薬品処理を終わったウエーハの水洗も同一のウエー
ハ処理槽2内で引き続いて行われ、ウエーハ処理容器2
外に取り出されるウエーハ及びそれを搭載するキャリア
は水洗が終わった状態になるので、ウエーハの移動に伴
う装置外での薬品ガスの発生も殆ど皆無になる。As described above, in the wafer processing apparatus of the present invention, the chemical processing of the wafer is carried out in the closed type wafer processing tank 2 to which the exhaust duct 3 (3A) is connected, and the processing chemicals and the co-washing liquid are treated. Since the storage tanks 5 and 6 are also of a closed type and connected to the exhaust duct 3 (3B or 3C), most of the chemical gas leaked from the equipment to the outside during the chemical processing of the wafer and the co-washing of the processing container. Disappear. Further, the wafer after the chemical treatment is washed with water in the same wafer treatment tank 2 continuously, and the wafer treatment container 2
Since the wafer to be taken out and the carrier equipped with the wafer have been washed with water, there is almost no generation of chemical gas outside the apparatus due to the movement of the wafer.
【0012】以上により、本発明の構成を有するウエー
ハ処理装置は、酸処理用とアルカリ処理用とを隣接して
配置して酸処理及びアルカリ処理が連続して行われるウ
エーハ処理装置を構成した際にも、それぞれの装置に接
続される酸性ガス或いはアルカリ性ガスの専用の排気ダ
クトに互いのガスが混入することはなく、酸性ガスとア
ルカリ性ガスの混触による反応生成物の発生は殆ど皆無
になる。As described above, when the wafer processing apparatus having the constitution of the present invention is configured as a wafer processing apparatus in which the acid treatment and the alkali treatment are arranged adjacent to each other and the acid treatment and the alkali treatment are continuously performed. However, the exclusive gas ducts for acidic gas or alkaline gas that are connected to the respective devices do not mix each other's gas, and almost no reaction products are generated by the contact and contact of the acidic gas and the alkaline gas.
【0013】従って、上記酸性ガスとアルカリ性ガスの
混触による反応生成物の析出堆積による排気ダクトの詰
まりや、排ガス洗浄装置の処理不良による前記反応生成
物ミストの大気中放出が回避されるので、ウエーハ処理
工程の安全性が確保されると同時に、ウエーハ処理に伴
う環境汚染が防止される。Therefore, clogging of the exhaust duct due to precipitation and deposition of reaction products due to contact between the acidic gas and alkaline gas, and release of the reaction product mist into the atmosphere due to defective treatment of the exhaust gas cleaning device are avoided. The safety of the processing process is ensured, and at the same time, environmental pollution due to wafer processing is prevented.
【0014】[0014]
【実施例】以下本発明を図示実施例により具体的に説明
する。図2は本発明のウエーハ処理装置の一実施例の模
式構成図、図3は同じく他の実施例の模式構成図であ
る。全図を通じ同一対象物は同一符合で示す。EXAMPLES The present invention will be described in detail below with reference to illustrated examples. 2 is a schematic configuration diagram of an embodiment of the wafer processing apparatus of the present invention, and FIG. 3 is a schematic configuration diagram of another embodiment of the same. The same object is denoted by the same reference numeral throughout the drawings.
【0015】本発明の一実施例を示す図2において、12
はオーバフロー方式の密閉型ウエーハ処理槽、13は排気
ダクト、13A 、13B 、13C はそれぞれ排気ダクト13の第
1、第2、第3の端部、14はウエーハ出し入れ口、15は
密閉型薬品保管タンク、16は密閉型共洗い液保管タン
ク、17は給水管、18は排水管、19は排ガス洗浄装置、20
は薬品供給回路、21はウエーハ、22はウエーハキャリ
ア、23は処理薬品、24は共洗い液、25は圧送ポンプ、26
はフィルター、27は新薬品供給管、SV-1〜SV-9はバルブ
を示す。In FIG. 2 showing one embodiment of the present invention, 12
Is an overflow type closed wafer processing tank, 13 is an exhaust duct, 13A, 13B and 13C are the first, second and third ends of the exhaust duct 13, 14 is a wafer loading / unloading port, and 15 is a closed chemical storage Tank, 16 is a closed type co-washing liquid storage tank, 17 is a water supply pipe, 18 is a drain pipe, 19 is an exhaust gas cleaning device, 20
Is a chemical supply circuit, 21 is a wafer, 22 is a wafer carrier, 23 is a processing chemical, 24 is a co-washing liquid, 25 is a pressure pump, 26
Is a filter, 27 is a new chemical supply pipe, and SV-1 to SV-9 are valves.
【0016】本発明のウエーハ処理装置例えばウエーハ
の酸処理装置は、例えば図2に示すような構成を有して
おり、密閉型薬品保管タンク15内には処理薬品23として
例えばHNO3が収容される。また、水洗後の処理槽12内の
隅々に溜まっている水を置換して導入される処理薬品の
濃度変化を防止するために行う水洗後の処理槽の洗浄即
ち共洗いに用いる溶液を収容する密閉型共洗い液保管タ
ンク16には共洗い液として前記処理薬品と同様のHNO3が
収容される。そして、ウエーハ処理槽12と前記薬品保管
タンク15及び共洗い液保管タンク16は、上部で、それぞ
れ排気ダクト端部13A 、13C 、13B を介し同一系統即ち
基部に専用の排ガス洗浄装置19を備えた酸系統の排気ダ
クト13に接続されている。A wafer processing apparatus of the present invention, for example, a wafer acid processing apparatus has a structure as shown in FIG. 2, for example, and HNO 3 is contained as a processing chemical 23 in the sealed chemical storage tank 15. It In addition, it contains a solution used for washing the treatment tank after washing, that is, for co-washing, in order to prevent changes in the concentration of the treatment chemical introduced by replacing the water accumulated in every corner of the treatment tank 12 after washing with water. The closed type co-washing liquid storage tank 16 stores HNO 3 as the co-washing liquid, which is similar to the above-mentioned treatment chemical. Then, the wafer processing tank 12, the chemical storage tank 15 and the co-washing liquid storage tank 16 are provided with a dedicated exhaust gas cleaning device 19 in the same system, that is, at the base via the exhaust duct end portions 13A, 13C, 13B at the upper part. It is connected to the exhaust duct 13 of the acid system.
【0017】ウエーハ21の処理に際しては、先ずバルブ
SV-4とSV-2のみを開いて処理薬品23のHNO3をウエーハ処
理槽12内に満たした後、ウエーハ出し入れ口14を開いて
ウエーハキャリア22に搭載されたウエーハ21を処理薬品
23内に浸漬保持し、前記ウエーハ出し入れ口14を閉じ
る。When processing the wafer 21, first the valve is used.
Only SV-4 and SV-2 are opened to fill the wafer processing tank 12 with HNO 3 of the processing chemical 23, and then the wafer loading / unloading port 14 is opened to process the wafer 21 mounted on the wafer carrier 22.
The wafer is held by being dipped therein, and the wafer loading / unloading port 14 is closed.
【0018】次いで、バルブのSV-1、SV-3、SV-4、SV-
5、SV-6、SV-7、SV-8を閉じ、SV-2のみを開き、圧送ポ
ンプ25を駆動する。この状態で、処理薬品23は、圧送ポ
ンプ25及びフィルター26を介してウエーハ処理槽12内を
循環する。この処理薬品23の循環を所定の時間継続し
て、所定の酸処理を行う。Next, the valves SV-1, SV-3, SV-4, SV-
5, SV-6, SV-7, SV-8 are closed, only SV-2 is opened, and the pressure pump 25 is driven. In this state, the processing chemical 23 circulates in the wafer processing tank 12 via the pressure feed pump 25 and the filter 26. The circulation of the treatment chemical 23 is continued for a predetermined time to perform a predetermined acid treatment.
【0019】次いで、処理が完了したならば、バルブSV
-2、SV-3、SV-4、SV-5、SV-7、SV-8を閉じSV-1、SV-6を
開いて圧送ポンプ25を駆動し、処理槽12内の処理薬品23
を薬品保管タンク15内に回収する。Then, when the processing is completed, the valve SV
-2, SV-3, SV-4, SV-5, SV-7, SV-8 are closed, SV-1, SV-6 are opened, pressure pump 25 is driven, and processing chemicals 23 in processing tank 12
Are collected in the chemical storage tank 15.
【0020】次いで、バルブSV-7を開いて給水管17から
純水を供給し、且つバルブSV-1、SV-3、SV-4、SV-5、SV
-6、SV-8を閉じ、バルブSV-2を開き、圧送ポンプ25を駆
動して、純水を圧送ポンプ25及びフィルター26を介して
ウエーハ処理槽12内を循環させ、所定の時間ウエーハ21
の純水洗浄を行う。Then, the valve SV-7 is opened to supply pure water from the water supply pipe 17, and the valves SV-1, SV-3, SV-4, SV-5 and SV are supplied.
-6, SV-8 are closed, valve SV-2 is opened, pressure pump 25 is driven, pure water is circulated in wafer processing tank 12 through pressure pump 25 and filter 26, and wafer 21
Wash with pure water.
【0021】次いで、純水洗浄が完了した後、バルブSV
-8を開き、SV-1、SV-3、SV-4、SV-5、SV-6を閉じた状態
で一定時間SV-2を開き、圧送ポンプ25を駆動させ、処理
槽12及び配管内の純水を排水管18から排出する。Then, after cleaning with pure water is completed, the valve SV is
-8 is opened, SV-1, SV-3, SV-4, SV-5, SV-6 is closed for a certain period of time SV-2 is opened, the pressure pump 25 is driven, and the processing tank 12 and the piping The pure water is discharged from the drain pipe 18.
【0022】そして、ウエーハ出し入れ口14を開き、純
水洗浄の終わったウエーハ21及びそれを搭載するキャリ
ア22を処理槽12から取り出し、他の処理装置へ移送す
る。次いで、ウエーハ出し入れ口14を閉じ、バルブSV-2
とSV-3を開き、バルブSV-1、SV-4、SV-5、SV-6、SV-7、
SV-8を閉じた状態で共洗い液を圧送して処理槽12内に満
たして共洗い洗浄を行った後、バルブSV-1、SV-5を開
き、バルブSV-2、SV-3、SV-4、SV-6、SV-7、SV-8を閉じ
た状態で、圧送ポンプ25を駆動し共洗い液24を共洗い液
保管容器16内へ回収する。Then, the wafer loading / unloading port 14 is opened, and the wafer 21 after cleaning with pure water and the carrier 22 on which the wafer 21 is loaded are taken out from the processing tank 12 and transferred to another processing apparatus. Next, the wafer loading / unloading port 14 is closed, and the valve SV-2
And SV-3 open, valves SV-1, SV-4, SV-5, SV-6, SV-7,
With the SV-8 closed, the co-washing liquid is pressure-fed to fill the processing tank 12 for co-washing and cleaning, then the valves SV-1 and SV-5 are opened, and the valves SV-2, SV-3, With the SV-4, SV-6, SV-7 and SV-8 closed, the pressure feed pump 25 is driven to collect the co-washing liquid 24 into the co-washing liquid storage container 16.
【0023】この状態において、処理槽12及び配管内に
残留していた純水は共洗い液24で置換され、次に処理槽
12内に処理薬品23を導入した際、その濃度が変化するの
が抑制される。In this state, the pure water remaining in the treatment tank 12 and the pipe is replaced by the co-washing liquid 24, and then the treatment tank 12 is replaced.
When the treatment chemical 23 is introduced into the inside 12, the change in the concentration thereof is suppressed.
【0024】このように、ウエーハ21の処理がなされる
本発明に係る上記ウエーハ処理装置においては、処理薬
品及び共洗い液となるHNO3は総て、専用の酸排気ダクト
13に接続された密閉容器内で扱われるので、装置外部へ
漏洩するHNO3を含むガスの量は極微量に抑えることがで
きる。また処理されるウエーハ21及びそれを搭載するキ
ャリア22の装置からの出し入れは、純水洗浄が終わって
からなされるので、半導体ウエーハ及びキャリアについ
て装置からひきだされ、装置の外部に拡散するHNO3を含
むガスも殆ど発生しない。なお、十数回繰り返された
後、共洗い用のHNO3は、排水管18より排出され、処理用
のHNO3が共洗い用になり、SV-9が開き新薬品供給管27よ
り新しいHNO3が供給される。As described above, in the above-mentioned wafer processing apparatus according to the present invention in which the wafer 21 is processed, the processing chemicals and HNO 3 as the co-washing liquid are all dedicated acid exhaust ducts.
Since it is handled in a closed container connected to 13, the amount of gas containing HNO 3 leaking to the outside of the device can be suppressed to an extremely small amount. Further out from the apparatus carrier 22 for mounting the wafer 21 and it is processed, since the pure water cleaning is performed after the end, drawn from the semiconductor wafer and the carrier device, HNO 3 to diffuse to the outside of the device Almost no gas containing is generated. After repeated dozens of times, HNO 3 for co-washing is discharged from drain pipe 18, HNO 3 for treatment is for co-washing, SV-9 opens and new HNO 3 from new chemical supply pipe 27. 3 is supplied.
【0025】図3は酸処理槽とアルカリ処理槽が同一処
理室内に隣接して配置される本発明の他の実施例の模式
構成図である。図において、112 は密閉型酸処理槽、11
3 は酸ガス用排気ダクト、113A 、113B、113Cはその第
1、第2、第3の端部、114 はウエーハ出し入れ口、11
5 は密閉型酸保管タンク、116 は密閉型酸用共洗い液保
管タンク、117 は給水管、118は排水管、119 は酸ガス
用排ガス洗浄装置、120 は前記実施例と同様の回路構成
を有する酸処理用薬品供給回路、121 は酸性薬品供給
管、212 は密閉型アルカリ処理槽、213 はアルカリガス
用排気ダクト、213A 、213B、213Cはその第1、第2、
第3の端部、214 はウエーハ出し入れ口、215 は密閉型
アルカリ保管タンク、216 は密閉型アルカリ用共洗い液
保管タンク、217 は給水管、218 は排水管、219 はアル
カリガス用排ガス洗浄装置、220 は前記実施例と同様の
回路構成を有するアルカリ処理用薬品供給回路、221 は
アルカリ性薬品供給管、123 は酸処理液、223 はアルカ
リ処理液、21はウエーハ、22はウエーハキャリア、1は
処理室を示す。FIG. 3 is a schematic structural view of another embodiment of the present invention in which an acid treatment tank and an alkali treatment tank are arranged adjacent to each other in the same treatment chamber. In the figure, 112 is a closed acid treatment tank, 11
3 is an exhaust duct for acid gas, 113A, 113B and 113C are its first, second and third ends, 114 is a wafer loading / unloading port, 11
5 is a sealed acid storage tank, 116 is a sealed acid co-washing solution storage tank, 117 is a water supply pipe, 118 is a drain pipe, 119 is an acid gas exhaust gas cleaning device, and 120 is the same circuit configuration as in the above embodiment. The acid treatment chemical supply circuit that is provided, 121 is an acidic chemical supply pipe, 212 is a closed alkaline treatment tank, 213 is an exhaust duct for alkali gas, and 213A, 213B, and 213C are the first and second thereof.
The third end, 214 is a wafer loading / unloading port, 215 is a sealed alkaline storage tank, 216 is a sealed alkaline co-washing liquid storage tank, 217 is a water supply pipe, 218 is a drain pipe, and 219 is an exhaust gas cleaning device for alkaline gas. , 220 is a chemical supply circuit for alkaline treatment having the same circuit configuration as the above-mentioned embodiment, 221 is an alkaline chemical supply pipe, 123 is an acid treatment liquid, 223 is an alkali treatment liquid, 21 is a wafer, 22 is a wafer carrier, 1 is Shows the processing chamber.
【0026】この実施例においては、図示のように、前
記実施例のウエーハ処理装置と同様な構成を有するウエ
ーハ21の酸処理装置とアルカリ処理装置とが組み合わさ
れて、ウエーハの酸処理とアルカリ処理が連続してなさ
れる一体のウエーハ処理装置が構成されている。そし
て、各々の処理槽における処理の方法は、前記実施例と
同様に行われる。In this embodiment, as shown in the figure, the acid treatment device and the alkali treatment device of the wafer 21 having the same structure as the wafer treatment device of the above-mentioned embodiment are combined to perform the acid treatment and the alkali treatment of the wafer. An integrated wafer processing device is continuously formed. The processing method in each processing tank is the same as that in the above-mentioned embodiment.
【0027】この装置において、例えば、先ず、酸処理
槽112 に酸処理液123 を満たした後、処理槽112 のウエ
ーハ出し入れ口114 を開き、ウエーハキャリア22に搭載
されたウエーハ21を矢印を付した鎖線mに示すように酸
処理液123 内に浸漬し保持し、ウエーハ出し入れ口114
を閉じ、処理液123 を循環しながら所定の時間酸処理す
る。In this apparatus, for example, first, the acid treatment bath 112 is filled with the acid treatment liquid 123, the wafer loading / unloading port 114 of the treatment bath 112 is opened, and the wafer 21 mounted on the wafer carrier 22 is marked with an arrow. As shown by the chain line m, the wafer is immersed and held in the acid treatment liquid 123, and the wafer loading / unloading port 114
Is closed, and an acid treatment is performed for a predetermined time while circulating the treatment liquid 123.
【0028】次いで、酸処理槽112 内の酸処理液123 を
密閉型酸保管タンク115 内に回収した後、酸処理槽112
内に純水を流通循環させ水洗を行う。次いで、処理槽11
2 のウエーハ出し入れ口114 を開いて水洗の終わったウ
エーハ21及びキャリア22を引出し、前記矢印を付した鎖
線mに示すように移動し、アルカリ処理槽212 のウエー
ハ出し入れ口214 を開いて槽212 内に満たされたアルカ
リ処理液223 中に浸漬保持する。Next, after recovering the acid treatment liquid 123 in the acid treatment tank 112 into the closed type acid storage tank 115, the acid treatment tank 112 is recovered.
Purified water is circulated in the inside for washing with water. Then, the processing tank 11
Open the wafer loading / unloading port 114 of No. 2 and pull out the wafer 21 and the carrier 22 that have been washed with water, move them as shown by the chain line m with the arrow, and open the wafer loading / unloading port 214 of the alkali treatment tank 212 to open the inside of the tank 212. It is dipped and held in the alkaline treatment liquid 223 filled with the solution.
【0029】次いで、アルカリ処理槽212 のウエーハ出
し入れ口214 を閉じ、処理液223 を循環しながら所定の
時間アルカリ処理を行う。次いで、アルカリ処理槽212
内のアルカリ処理液223 を密閉型アルカリ保管容器215
内に回収した後、処理槽212 内に純水を流通させて、ウ
エーハ21及びキャリア22の水洗を行う。Next, the wafer loading / unloading port 214 of the alkali treatment tank 212 is closed, and the alkali treatment is performed for a predetermined time while circulating the treatment liquid 223. Then, the alkaline treatment tank 212
The alkaline treatment liquid 223 in the sealed alkaline storage container 215
After the recovery, the pure water is circulated in the processing tank 212 to wash the wafer 21 and the carrier 22 with water.
【0030】次いで、ウエーハ出し入れ口214 を開いて
水洗を終わったウエーハ21及びウエーハキャリア22を引
出し次の工程へ移動して、ウエーハ処理が完了する。
この装置においては、上記工程説明で述べたように、キ
ャリア22に搭載したウエーハ21を密閉型の酸処理槽112
及びアルカリ処理槽212 内に挿入する際、それぞれのウ
エーハ出し入れ口114 或いは214 が開かれて処理液面が
処理室1内に表出するが、それぞれ専用の排気ダクト11
3 或いは213 の端部113A或いは213Aが処理槽112 或いは
212 内に開口しているので、それぞれのウエーハ出し入
れ口114 或いは214 が開かれた時に処理室1内の空気は
処理槽112 或いは212 の内部に向かって流れ込むので、
処理室1内への酸或いはアルカリのガスの流出は殆ど生
じない。また、それぞれの処理を終わったウエーハ21及
びキャリア22は水洗を終わった後に処理装置から引き出
されて移動するので、ウエーハ21及びキャリア22の表面
から酸或いはアルカリのガスが処理室1内に放出される
こともない。また保管される酸処理液、アルカリ処理液
及びそれぞれの共洗い液も、それぞれ酸或いはアルカリ
専用の排気ダクトに接続された密閉型の保管容器内に収
容されるので、これら保管容器115 、116 、215 、216
等から処理室1内に漏洩する酸、アルカリのガスも発生
しない。従って、処理室1内を介して酸とアルカリのガ
スが高濃度で混合して酸用或いはアルカリ用の排気ダク
ト113 或いは213 に引き込まれることはなくなる。よっ
て、酸性ガスとアルカリ性ガスの混触により形成される
反応生成物によるダクトの詰まりや環境汚染は防止され
る。Then, the wafer loading / unloading port 214 is opened, and the wafer 21 and the wafer carrier 22 which have been washed with water are withdrawn and moved to the next step, and the wafer processing is completed.
In this apparatus, as described in the above process description, the wafer 21 mounted on the carrier 22 is sealed in the acid treatment tank 112.
When the wafer is inserted into the alkaline treatment tank 212, the respective wafer loading / unloading ports 114 or 214 are opened to expose the processing liquid surface into the processing chamber 1.
3 or 213 ends 113A or 213A of the processing tank 112 or
Since it is opened in 212, the air in the processing chamber 1 flows toward the inside of the processing tank 112 or 212 when the respective wafer loading / unloading ports 114 or 214 are opened.
Almost no acid or alkali gas flows into the processing chamber 1. In addition, since the wafer 21 and the carrier 22 that have undergone the respective treatments are drawn out of the treatment apparatus and moved after finishing the washing with water, an acid or alkali gas is released from the surface of the wafer 21 and the carrier 22 into the treatment chamber 1. It never happens. Further, the acid treatment liquid, the alkali treatment liquid and the respective co-washing liquids to be stored are also housed in the hermetically-sealed storage containers connected to the exhaust ducts dedicated to the acid or alkali, respectively, so these storage containers 115, 116, 215, 216
Acid or alkali gas leaking into the processing chamber 1 from the above is not generated. Therefore, the acid and alkali gas are not mixed at a high concentration through the processing chamber 1 and drawn into the acid or alkali exhaust duct 113 or 213. Therefore, the clogging of the duct and the environmental pollution due to the reaction product formed by the contact of the acidic gas and the alkaline gas are prevented.
【0031】[0031]
【発明の効果】以上説明のように、本発明のウエーハ処
理装置によれば、ウエーハの酸処理とアルカリ処理を近
接した領域で行っても、酸性ガスとアルカリ性ガスの混
触による反応生成物の形成は殆どなくなる。As described above, according to the wafer processing apparatus of the present invention, even if the acid treatment and the alkali treatment of the wafer are performed in the vicinity of each other, the reaction product is formed by the contact and contact of the acidic gas and the alkaline gas. Is almost gone.
【0032】よって、半導体装置を製造する際のウエー
ハ処理において、上記反応生成物が排気ダクト内に析出
堆積してダクトの排気効率が低下することがなく、また
酸性ガス及びアルカリ性ガスがそれぞれ専用の排ガス洗
浄装置により十分に除害される。従って本発明は、ウエ
ーハ処理における安全性の向上及び環境汚染の防止に寄
与するところが大きい。Therefore, in the wafer processing for manufacturing the semiconductor device, the reaction product does not deposit and accumulate in the exhaust duct to reduce the exhaust efficiency of the duct, and the acidic gas and the alkaline gas are used exclusively for the respective cases. Sufficiently removed by exhaust gas cleaning equipment. Therefore, the present invention greatly contributes to improvement of safety in wafer processing and prevention of environmental pollution.
【図1】 本発明の原理説明用のウエーハ処理装置要部
構成図FIG. 1 is a block diagram of a main part of a wafer processing apparatus for explaining the principle of the present invention.
【図2】 本発明のウエーハ処理装置の一実施例の模式
構成図FIG. 2 is a schematic configuration diagram of an embodiment of the wafer processing apparatus of the present invention.
【図3】 本発明のウエーハ処理装置の他の実施例の模
式構成図FIG. 3 is a schematic configuration diagram of another embodiment of the wafer processing apparatus of the present invention.
【図4】 従来のウエーハ処理装置の模式構成図FIG. 4 is a schematic configuration diagram of a conventional wafer processing apparatus.
2 密閉型ウエーハ処理槽 2A 蓋部 3 排気ダクト 3A 排気ダクトの第1の端部 3B 排気ダクトの第2の端部 3C 排気ダクトの第3の端部 4 ウエーハ出し入れ口 5 密閉型薬品保管タンク 6 密閉型共洗い液保管タンク 7 給水管 7′新薬品供給管 8 排水管 9 排ガス洗浄装置 10 薬液供給回路 11 フィルター 2 Closed wafer processing tank 2A Lid 3 Exhaust duct 3A 1st end of exhaust duct 3B 2nd end of exhaust duct 3C 3rd end of exhaust duct 4 Wafer loading / unloading port 5 Sealed chemical storage tank 6 Closed type co-washing liquid storage tank 7 Water supply pipe 7'New chemical supply pipe 8 Drain pipe 9 Exhaust gas cleaning device 10 Chemical liquid supply circuit 11 Filter
Claims (2)
部が覆われ、該蓋部から所定寸法の空間部を隔てた高さ
までオーバフロー方式により処理液が満たされる密閉型
のウエーハ処理槽と、該空間部内に末端部が開口する排
気ダクトと、該処理槽内に供給する処理薬品を収容し且
つ該排気ダクトに接続された密閉型の薬品保管タンク
と、該処理槽内に供給する共洗い液を収容し且つ該排気
ダクトに接続された密閉型の共洗い液保管タンクと、該
処理薬品及び共洗い液を該薬品保管タンク或いは共洗い
液保管タンクから処理槽内へ供給し、且つ該処理槽内を
循環させ、更に該処理槽内から該薬品保管タンク或いは
共洗い液タンク内へ回収する機能を有する薬液供給回路
と、該薬液供給回路内に挿入されたフィルターと、該処
理槽に純水を流通せしめる給水手段と、該処理層からの
排水手段と、該薬品保管タンクへの新薬品の供給手段
と、該排気ダクトの基部に配設された排ガス洗浄装置と
を具備し、ウエーハの薬品処理から水洗までが同一処理
槽内でなされることを特徴とするウエーハ処理装置。1. A sealed wafer processing tank, the upper part of which is covered with a lid having an openable / closable sample insertion port, and a processing liquid is filled up to a height separating a space of a predetermined dimension from the lid by an overflow method. An exhaust duct having a terminal end opening in the space, a closed type chemical storage tank containing the processing chemicals to be supplied into the processing tank and connected to the exhaust duct, and a supply tank into the processing tank. A closed type co-washing liquid storage tank containing a washing liquid and connected to the exhaust duct, and supplying the treatment chemicals and the co-washing liquid into the treatment tank from the chemical storage tank or the co-washing liquid storage tank, and A chemical liquid supply circuit having a function of circulating the inside of the treatment tank and further recovering from the treatment tank into the chemical storage tank or the co-washing liquid tank, a filter inserted in the chemical liquid supply circuit, and the treatment tank Distribute pure water to For treating chemicals on a wafer, which comprises: a water supply means for discharging, a drainage means from the treatment layer, a means for supplying a new chemical to the chemical storage tank, and an exhaust gas cleaning device arranged at the base of the exhaust duct. A wafer processing apparatus characterized in that everything from cleaning to washing is performed in the same processing tank.
第1のウエーハ処理装置とアルカリ処理用の第2のウエ
ーハ処理装置とを同一処理室内に有してなることを特徴
とするウエーハ処理装置。2. A wafer having the first wafer processing apparatus for acid treatment and the second wafer processing apparatus for alkali treatment having the structure according to claim 1 in the same processing chamber. Processing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04235044A JP3089846B2 (en) | 1992-09-03 | 1992-09-03 | Wafer processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04235044A JP3089846B2 (en) | 1992-09-03 | 1992-09-03 | Wafer processing equipment |
Publications (2)
Publication Number | Publication Date |
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JPH0684873A true JPH0684873A (en) | 1994-03-25 |
JP3089846B2 JP3089846B2 (en) | 2000-09-18 |
Family
ID=16980255
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JP04235044A Expired - Lifetime JP3089846B2 (en) | 1992-09-03 | 1992-09-03 | Wafer processing equipment |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6877518B2 (en) | 2001-12-04 | 2005-04-12 | Nec Electronics Corporation | Chemical solution treatment apparatus for semiconductor substrate |
JP2009076878A (en) * | 2007-08-29 | 2009-04-09 | Tokyo Electron Ltd | Substrate processing apparatus, method for processing substrate, and storage medium |
CN105013754A (en) * | 2015-06-24 | 2015-11-04 | 山东华光光电子有限公司 | Online chemical cleaning method for exhaust treatment system of MOCVD device |
CN110125128A (en) * | 2019-06-19 | 2019-08-16 | 德淮半导体有限公司 | Waste gas collection device and wet-cleaning device |
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CN107527832B (en) * | 2016-06-21 | 2020-07-31 | 无锡华瑛微电子技术有限公司 | Modular semiconductor processing apparatus |
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1992
- 1992-09-03 JP JP04235044A patent/JP3089846B2/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6877518B2 (en) | 2001-12-04 | 2005-04-12 | Nec Electronics Corporation | Chemical solution treatment apparatus for semiconductor substrate |
KR100495400B1 (en) * | 2001-12-04 | 2005-06-14 | 간또 가가꾸 가부시끼가이샤 | Chemical solution treatment apparatus for semiconductor substrate |
JP2009076878A (en) * | 2007-08-29 | 2009-04-09 | Tokyo Electron Ltd | Substrate processing apparatus, method for processing substrate, and storage medium |
CN105013754A (en) * | 2015-06-24 | 2015-11-04 | 山东华光光电子有限公司 | Online chemical cleaning method for exhaust treatment system of MOCVD device |
CN110125128A (en) * | 2019-06-19 | 2019-08-16 | 德淮半导体有限公司 | Waste gas collection device and wet-cleaning device |
Also Published As
Publication number | Publication date |
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JP3089846B2 (en) | 2000-09-18 |
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