JPH0678595B2 - Electronic component manufacturing method - Google Patents
Electronic component manufacturing methodInfo
- Publication number
- JPH0678595B2 JPH0678595B2 JP63234370A JP23437088A JPH0678595B2 JP H0678595 B2 JPH0678595 B2 JP H0678595B2 JP 63234370 A JP63234370 A JP 63234370A JP 23437088 A JP23437088 A JP 23437088A JP H0678595 B2 JPH0678595 B2 JP H0678595B2
- Authority
- JP
- Japan
- Prior art keywords
- bright
- plating
- bath
- solder
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電子部品の製造方法に関し、特に、耐変色性や
半田付性等に優れ、かつ、加熱溶融時のボイドやデウェ
ッティング不良を防ぐようにした電子部品の製造方法に
関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing an electronic component, and in particular, it is excellent in discoloration resistance, solderability, and the like, and can prevent voids and dewetting defects during heating and melting. The present invention relates to a method of manufacturing an electronic component that is prevented.
従来、印刷配線板、可撓性印刷配線板、IC用フィルムキ
ャリア、半導体用リードフレーム、コネクター端子等の
電子部品を製造する場合、所定の金属基体上に錫および
半田のめっきを施しており、この錫および半田のめっき
には無光沢、半光沢および光沢めっきの種類がある。こ
のうち、無光沢および半光沢めっきはめっき表面が比較
的粗雑であるため、耐酸化性や耐湿性等に劣り、変色や
半田付性の低下を招きやすいという欠点を有している。
このため、めっき結晶が緻密で平滑表面の得られる光沢
めっきがこれらの特性に優れていることから最近では盛
んに用いられるようになっている。Conventionally, when manufacturing electronic components such as printed wiring boards, flexible printed wiring boards, film carriers for ICs, lead frames for semiconductors, connector terminals, etc., tin and solder are plated on a predetermined metal substrate, This tin and solder plating is available in matte, semi-gloss and bright plating types. Among them, the matte and semi-glossy platings have a relatively rough surface, and thus have poor oxidation resistance, moisture resistance and the like, and have a drawback that they are likely to cause discoloration and deterioration of solderability.
For this reason, bright plating, which has a dense plated crystal and can obtain a smooth surface, is excellent in these characteristics, and has recently been actively used.
以上述べた光沢めっきは、光沢錫めっきの場合、硫酸
浴、ホウフッ化浴、有機スルホン酸浴等の基本浴を用
い、また、光沢半田めっきの場合、ホウフッ化浴、有機
スルホン酸浴等の基本浴を用いて各々に界面活性剤、ア
ミン−アルデヒド化合物等の有機化合物からなる光沢
剤、ホルマリン等の添加剤を加えて得ることができる。The bright plating described above uses basic baths such as sulfuric acid bath, borofluoride bath, organic sulfonic acid bath in the case of bright tin plating, and basic baths such as borofluoride bath, organic sulfonic acid bath in the case of bright solder plating. It can be obtained by adding a surfactant, a brightening agent made of an organic compound such as an amine-aldehyde compound, and an additive such as formalin to each using a bath.
しかし、従来の電子部品の製造方法においては、光沢錫
あるいは光沢半田のめっき膜中に添加剤、もしくは添加
剤の分解生成物等の有機物の共析が不可避であり、特に
無光沢めっきや半光沢めっきに比べると、はるかに高濃
度の有機物を含むため、これらの光沢めっきを施した部
品を半田付や半導体素子のボンディング等のため、めっ
きの融点以上に加熱した場合、溶融しためっき金属中で
これらの共析有機物が熱分解によって気化、発泡してボ
イドが発生したり、デウェッティングと呼ばれる不均一
な濡れ不良を生じ、不規則な凸凹の外観を呈するように
なる。このため、接合部の信頼性が低下し、外観的にも
商品価値を損なうという問題がある。However, in the conventional manufacturing method of electronic parts, co-deposition of organic substances such as additives or decomposition products of additives in the plating film of bright tin or bright solder is unavoidable. Compared with plating, it contains a much higher concentration of organic substances, so when these bright plated components are heated above the melting point of the plating for soldering or semiconductor element bonding, etc. These eutectoid organic substances are vaporized and foamed by thermal decomposition to generate voids, and non-uniform wetting defects called dewetting occur, resulting in an irregular appearance. For this reason, there is a problem that the reliability of the joint portion is lowered and the commercial value is also impaired in appearance.
従って、本発明の目的は耐変色性や半田付性に優れ、か
つ、加熱溶融時のボイドやデウェッティング不良の発生
を防止することができる電子部品の製造方法を提供する
ことである。Therefore, an object of the present invention is to provide a method of manufacturing an electronic component which is excellent in discoloration resistance and solderability and can prevent the occurrence of voids and dewetting defects during heating and melting.
本発明は以上述べた目的を実現するため、有機光沢剤を
添加した光沢錫、もしくは光沢半田のめっき浴を用いて
金属基体上に光沢錫、もしくは光沢半田のめっきを施
し、この後、光沢錫、もしくは光沢半田のめっきの融点
未満の80〜120℃の温度で30分〜５時間加熱処理するよ
うにした電子部品の製造方法を提供するものである。In order to achieve the above-mentioned object, the present invention uses bright tin to which an organic brightener is added, or bright tin or bright solder is plated on a metal substrate using a bright solder plating bath. Alternatively, the present invention provides a method for producing an electronic component in which heat treatment is performed for 30 minutes to 5 hours at a temperature of 80 to 120 ° C., which is lower than the melting point of bright solder plating.
即ち、本発明の電子部品の製造方法は、有機光沢剤を添
加した光沢錫、もしくは光沢半田のめっき浴を用いて金
属基体上に光沢錫、もしくは光沢半田のめっきを施す工
程と、 前記光沢錫、もしくは光沢半田のめっきが施された前記
金属基体を前記光沢錫、もしくは光沢半田のめっきの融
点未満の80〜120℃の温度で30分〜５時間加熱処理する
工程とを有するが、ここで加熱温度が80℃未満では熱処
理の効果が小さく、長時間の処理が必要になって不経済
となり、120℃を超える温度ではめっき融点以下であっ
てもめっき表面に酸化や素地金属（例えば、銅）のめっ
き中への拡散速度の増大により、処理時間が長い場合に
は半田付性のボンディング性が低下しやすくなる。ま
た、これを防止するには処理時間を短くすれは良いが、
多量の部品を同時に熱処理すると、温度分布や昇温速度
の不均一により熱処理効果が不均一となる恐れがある。
処理時間はめっきの種類、部品の大きさ、形状等により
異なるが、発泡、デウェッティングに対する抑制効果と
半田付性の低下しない範囲で適切な条件を選定すること
ができ、処理温度が低く、また、めっき厚が厚い場合に
は処理時間を長くし、処理温度が高く、めっき厚が薄い
場合には処理時間を短くする。例えば、80℃の場合、２
〜５時間、120℃の場合、30分〜２時間の範囲が良好で
ある。以上述べた熱処理による前述の問題点の抑制効果
はめっきに含まれる有機物の形態が変わり、変質するた
めであると考えている。That is, the method for manufacturing an electronic component of the present invention comprises a step of plating bright tin or a bright solder on a metal substrate using a bright tin or a bright solder plating bath to which an organic brightener is added. Or a step of heat-treating the metal substrate plated with bright solder at a temperature of 80 to 120 ° C., which is lower than the melting point of the bright tin or bright solder plating, for 30 minutes to 5 hours. If the heating temperature is less than 80 ° C, the effect of heat treatment is small, and long-time treatment is required, which is uneconomical. At temperatures above 120 ° C, even if the temperature is below the melting point of the plating, oxidation or base metal (for example, copper) Due to the increase in the diffusion rate of (1) during plating, the bondability of solderability tends to deteriorate when the processing time is long. In order to prevent this, it is better to shorten the processing time,
When a large number of parts are heat treated at the same time, the heat treatment effect may be non-uniform due to non-uniform temperature distribution and temperature rising rate.
The treatment time varies depending on the type of plating, size and shape of parts, etc., but it is possible to select appropriate conditions within a range that does not reduce the effect of suppressing foaming, dewetting and solderability, and the treatment temperature is low. When the plating thickness is thick, the treatment time is lengthened, and the treatment temperature is high, and when the plating thickness is thin, the treatment time is shortened. For example, in case of 80 ℃, 2
In the case of 120 ° C for 5 hours, the range of 30 minutes to 2 hours is good. It is considered that the effect of suppressing the above-mentioned problems by the heat treatment described above is because the form of the organic matter contained in the plating is changed and the quality is changed.
以下、本発明の電子部品の製造方法を詳細に説明する。 Hereinafter, the method for manufacturing an electronic component of the present invention will be described in detail.
（実施例１） ポリイミドフィルム上にフォトエッチング法により形成
された厚さ35μｍの銅箔からなる配線パターンおよびリ
ードを持つIC用フィルムキャリアの銅パターンおよびリ
ード上に以下に示すのめっき条件で平均１μｍ厚の光
沢錫めっきを施した後、温度および時間を変えて熱処理
を行い、光沢錫めっきフィルムキャリアを得た。(Example 1) On a copper pattern and leads of an IC film carrier having a wiring pattern and leads formed of a copper foil having a thickness of 35 μm formed on a polyimide film by a photo-etching method, an average of 1 μm under the plating conditions shown below. After performing thick tin plating, heat treatment was performed at different temperatures and times to obtain a bright tin plated film carrier.
光沢錫めっきの条件 （１）浴組成 硫酸第一錫 40g/ 硫酸 100g/ UTB CS（石原薬品製） 30g/ UTB NO.1（ 〃 ） 20g/ UTB NO.2（ 〃 ） 10g/ ホルマリン 5g/ （２）浴温 15℃ （３）陰極電流密度 2A/dm2 （実施例２） 実施例１と同様に得られたIC用フィルムキャリアの銅パ
ターンおよびリード上に以下に示すのめっき条件で平
均１μｍ厚の光沢半田めっきを施し、更に、加熱処理を
行って光沢半田めっきフィルムキャリアを得た。Conditions for bright tin plating (1) Bath composition Stannous sulfate 40g / Sulfuric acid 100g / UTB CS (Ishihara Chemical) 30g / UTB NO.1 (〃) 20g / UTB NO.2 (〃) 10g / Formalin 5g / ( 2) Bath temperature 15 ° C. (3) Cathode current density 2 A / dm 2 (Example 2) On the copper pattern and leads of the film carrier for IC obtained in the same manner as in Example 1, 1 μm on average under the plating conditions shown below. Thick bright solder plating was performed, and further heat treatment was performed to obtain a bright solder plated film carrier.
光沢半田めっきの条件 （１）浴組成 ホウフッ化第一錫（45％） 200g/ ホウフッ化浴（45％） 40g/ ホウフッ化水素酸（42％） 240g/ UTB NO.1（石原薬品製） 20g/ UTB NO.2（ 〃 ） 20g/ ホルマリン 5g/ （２）浴温 15℃ （３）陰極電流密度 4A/dm2 以上のように得られた実施例１および実施例２のフィル
ムキャリアについて、加熱リフロー性および半田付性の
実験を行った。加熱リフロー性は260℃±５℃に保った
シリコン油浴に５秒間浸漬した後、付着した油を除去し
て外観を観察した。また、半田付性はMIL法により230℃
±５℃の半田浴に５秒間浸漬した後の濡れ面積により評
価した。次表はその実験結果を示す。Conditions for bright solder plating (1) Bath composition Stannous borofluoride (45%) 200g / borofluoride bath (45%) 40g / borofluoric acid (42%) 240g / UTB NO.1 (Ishihara Yakuhin) 20g / UTB NO.2 (〃) for 20 g / formalin 5 g / (2) bath temperature 15 ° C. (3) cathode current density of 4A / dm 2 or more film carrier of example 1 and example 2 were obtained as the heating Experiments on reflowability and solderability were conducted. The heat reflow property was immersed in a silicon oil bath maintained at 260 ° C ± 5 ° C for 5 seconds, and then the adhered oil was removed to observe the appearance. Also, solderability is 230 ° C according to the MIL method.
It was evaluated by the wetted area after being immersed in a solder bath of ± 5 ° C. for 5 seconds. The following table shows the experimental results.
以上の実験結果から明らかなように、リフロー後の外観
評価および半田付性評価が共に〇となる条件は加熱温度
が80〜120℃の範囲であり、80℃の場合、２〜５時間、1
20℃の場合、30分〜２時間の範囲が良好である。このよ
うに比較的低温度で熱処理を行うことにより、半田付性
やボンディング性を損なうことなく、光沢めっきの欠点
である加熱溶融時の共析有機物の熱分解によるボイドの
生成やデウェッティング不良を効果的に抑制することが
でき、電子部品としての信頼性の向上や外観不良の防止
を図ることが可能となる。 As is clear from the above experimental results, the condition that both the appearance evaluation and the solderability evaluation after reflow are ◯ is that the heating temperature is in the range of 80 to 120 ° C, and in the case of 80 ° C, 2 to 5 hours, 1
In the case of 20 ° C, the range of 30 minutes to 2 hours is good. By performing heat treatment at a relatively low temperature in this manner, void formation and dewetting defects due to thermal decomposition of eutectoid organic matter during heating and melting, which is a drawback of bright plating, without impairing solderability and bondability Can be effectively suppressed, and reliability as an electronic component can be improved and appearance defects can be prevented.
以上説明した通り、本発明の電子部品の製造方法による
と、有機光沢剤を添加した光沢錫、もしくは光沢半田の
めっき浴を用いて金属基体上に光沢錫、もしくは光沢半
田のめっきを施し、この後、光沢錫、もしくは光沢半田
のめっき融点未満の80〜120℃の温度で30分〜５時間加
熱処理するようにしたため、耐変色性、ボンディング性
および半田付性に優れ、かつ、加熱溶融時のボイドやデ
ウェッティング不良の発生を防止することができる。As described above, according to the method for producing an electronic component of the present invention, bright tin or a bright solder is plated on a metal substrate using a bright tin or a bright solder plating bath to which an organic brightener is added. After that, heat treatment is performed for 30 minutes to 5 hours at a temperature of 80 to 120 ° C, which is lower than the melting point of bright tin or bright solder, so it has excellent discoloration resistance, bonding properties and solderability, and when heated and melted. It is possible to prevent the occurrence of voids and dewetting defects.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 3/24 Ｂ 7511−4Ｅ Ａ 7511−4Ｅ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H05K 3/24 B 7511-4E A 7511-4E
Claims (1)
光沢半田浴を用いて金属基体上に光沢錫、もしくは光沢
半田のめっきを施す工程と、前記光沢錫、もしくは光沢
半田のめっきが施された前記金属基体を前記めっきの融
点未満の80〜120℃の温度で30分〜５時間加熱処理する
工程とを有することを特徴とする電子部品の製造方法。1. A process of plating bright tin or a bright solder on a metal substrate using a bright tin bath or a bright solder bath to which an organic brightener is added, and a step of plating the bright tin or the bright solder. And a step of heat-treating the metal substrate thus prepared at a temperature of 80 to 120 ° C., which is lower than the melting point of the plating, for 30 minutes to 5 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63234370A JPH0678595B2 (en) | 1988-09-19 | 1988-09-19 | Electronic component manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63234370A JPH0678595B2 (en) | 1988-09-19 | 1988-09-19 | Electronic component manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0285395A JPH0285395A (en) | 1990-03-26 |
| JPH0678595B2 true JPH0678595B2 (en) | 1994-10-05 |
Family
ID=16969944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63234370A Expired - Lifetime JPH0678595B2 (en) | 1988-09-19 | 1988-09-19 | Electronic component manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0678595B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5059292B2 (en) * | 2005-03-08 | 2012-10-24 | 株式会社神戸製鋼所 | Sn alloy plating excellent in suppressing whisker generation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62149899A (en) * | 1985-09-17 | 1987-07-03 | Kobe Steel Ltd | Production of terminal and connector made of tinned copper alloy |
-
1988
- 1988-09-19 JP JP63234370A patent/JPH0678595B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0285395A (en) | 1990-03-26 |
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