JPH0285395A - Production of electronic parts - Google Patents
Production of electronic partsInfo
- Publication number
- JPH0285395A JPH0285395A JP63234370A JP23437088A JPH0285395A JP H0285395 A JPH0285395 A JP H0285395A JP 63234370 A JP63234370 A JP 63234370A JP 23437088 A JP23437088 A JP 23437088A JP H0285395 A JPH0285395 A JP H0285395A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- org
- electronic parts
- solder
- bright
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000007747 plating Methods 0.000 claims abstract description 46
- 229910000679 solder Inorganic materials 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 10
- 230000007547 defect Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 3
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 3
- 238000009736 wetting Methods 0.000 abstract description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005282 brightening Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910000375 tin(II) sulfate Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating Methods And Accessories (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子部品の製造方法に関し、特に、耐変色性や
半田付性等に優れ、かつ、加熱溶融時のボイドやデウェ
ッティング不良を防ぐようにした電子部品の製造方法に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing electronic components, and in particular, a method for manufacturing electronic components that has excellent discoloration resistance, solderability, etc., and eliminates voids and dewetting defects during heating and melting. The present invention relates to a method of manufacturing electronic components that prevents the above.
従来、印刷配線板、可撓性印刷配線板、■Ｃ用フィルム
キャリア、半導体用リードフレーム、コネクタ一端子等
の電子部品を製造する場合、所定の金属基体上に錫およ
び半田のめっきを施しており、この錫および半田のめっ
きには無光沢、半光沢および光沢めっきの種類がある。Conventionally, when manufacturing electronic components such as printed wiring boards, flexible printed wiring boards, C film carriers, lead frames for semiconductors, and connector terminals, tin and solder plating is performed on a predetermined metal substrate. There are various types of tin and solder plating: matte, semi-gloss, and bright plating.
このうち、無光沢および半光沢めっきはめっき表面が比
較的粗雑でるあため、耐酸化性や耐湿性等に劣り、変色
や半田付性の低下を招きやすいという欠点を有している
る。このため、めっき結晶が緻密で平滑表面の得られる
光沢めっきがこれらの特性に優れていることから最近で
は盛んに用いられるようになっている。Among these, matte and semi-glossy platings have the disadvantage that the plating surface is relatively rough, resulting in poor oxidation resistance, moisture resistance, etc., and discoloration and deterioration of solderability. For this reason, glossy plating with dense plating crystals and a smooth surface has recently been widely used because of its excellent properties.
以上述べた光沢めっきは、光沢錫めっきの場合、硫酸浴
、ホウフッカ浴、有機スルホン酸浴等の基本浴を用い、
また、光沢半田めっきの場合、ホウフッカ浴、有機スル
ホン酸浴等の基本浴を用いて各々に界面活性剤、アミン
−アルデヒド化合物等の有機化合物からなる光沢剤、ホ
ルマリン等の添加剤を加えて得ることができる。In the case of bright tin plating, the bright plating described above uses basic baths such as sulfuric acid bath, borofukka bath, and organic sulfonic acid bath.
In the case of bright solder plating, a basic bath such as a borofluoride bath or an organic sulfonic acid bath is used, and additives such as a surfactant, a brightening agent made of an organic compound such as an amine-aldehyde compound, and formalin are added to each bath. be able to.
しかし、従来の電子部品の製造方法においては、光沢錫
あるいは光沢半田のめっき膜中に添加剤、もしくは添加
剤の分解生成物等の有機物の共析が不可避であり、特に
無光沢めっきや半光沢めっきに比べると、はるかに高濃
度の有機物を含むため、これらの光沢めっきを施した部
品を半田付や半導体素子のボンディング等のため、めっ
きの融点以上に加熱した場合、溶融しためっき金属中で
これらの共析有機物が熱分解によって気化、発泡してボ
イドが発生したり、デウエツティングと呼ばれる不均一
な濡れ不良を生じ、不規則な凸凹の外観を呈するように
なる。このため、接合部の信顛性が低下し、外観的にも
商品価値を損なうという問題がある。However, in conventional manufacturing methods for electronic components, the eutectoid of organic substances such as additives or decomposition products of additives is unavoidable in the plating film of bright tin or bright solder. Compared to plating, it contains a much higher concentration of organic substances, so if parts with these bright platings are heated above the melting point of the plating for purposes such as soldering or bonding of semiconductor elements, they will be dissolved in the molten plated metal. These eutectoid organic substances vaporize and foam due to thermal decomposition, resulting in voids and non-uniform wetting defects called dewetting, resulting in an irregular, uneven appearance. For this reason, there is a problem in that the reliability of the joint is reduced and the commercial value is also impaired in terms of appearance.
従って、本発明の目的は耐変色性や半田付性に優れ、か
つ、加熱溶融時のボイドやデウエツティング不良の発生
を防止することができる電子部品の製造方法を提供する
ことである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing electronic components that has excellent color fastness and solderability, and can prevent voids and dewetting defects during heating and melting.
本発明は以上述べた目的を実現するため、有機光沢剤を
添加した光沢錫、もしくは光沢半田のめっき浴を用いて
金属基体上に光沢錫、もしくは光沢半田のめっきを施し
、この後、光沢錫、もしくは光沢半田のめっきの融点未
満の温度で所定の時間加熱処理するようにした電子部品
の製造方法を提供するものである。In order to achieve the above-mentioned object, the present invention plating bright tin or bright solder on a metal substrate using a bright tin or bright solder plating bath containing an organic brightener, and then plating bright tin or bright solder. Alternatively, the present invention provides a method for manufacturing an electronic component in which heat treatment is performed for a predetermined period of time at a temperature lower than the melting point of glossy solder plating.
即ち、本発明の電子部品の製造方法は、有機光沢剤を添
加した光沢錫、もしくは光沢半田のめっき浴を用いて金
属基体上に光沢錫、もしくは光沢半田のめっきを施す工
程と、前記光沢錫、もしくは光沢半田のめっきが施され
た前記金属基体を前記光沢錫、もしくは光沢半田のめっ
きの融点未満の温度で加熱処理する工程とを有するが、
特に、加熱処理は８０〜１２０℃の範囲が好適である。That is, the method for manufacturing an electronic component of the present invention includes the steps of plating bright tin or bright solder on a metal substrate using a plating bath of bright tin or bright solder added with an organic brightener; or a step of heat-treating the metal substrate plated with bright solder at a temperature below the melting point of the bright tin or the bright solder plating,
In particular, the heat treatment is preferably performed at a temperature in the range of 80 to 120°C.
即ち、８０℃未満では熱処理の効果が小さく、長時間の
処理が必要になって不経済となり、１２０℃を超える温
度ではめっき表面に酸化や素地金属（例えば、銅）のめ
っき中への拡散等により半田付性やボンディング性が低
下しやすくなる。また、これを防止するには処理時間を
短くすれば良いが、多量の部品を同時に熱処理すると、
温度分布や昇温速度の不均一により熱処理効果が不均一
となる恐れがある。処理時間はめっきの種類、部品の大
きさ、形状等により異なるが、発泡、デウェッティング
に対する抑制効果と半田付性の低下しない範囲で適切な
条件を選定することができ、処理温度が低く、また、め
っき厚が厚い場合には処理時間を長くし、処理温度が高
く、めっき厚が薄い場合には処理時間を短くする。例え
ば、８０℃の場合、２〜５時間、１２０℃の場合、３０
分〜２時間の範囲が良好である。以上述べた熱処理によ
る前述の問題点の抑制効果はめっきに含まれる有機物の
形態が変わり、変質するためであると考えている。In other words, if the temperature is lower than 80°C, the effect of heat treatment will be small and a long time treatment will be required, making it uneconomical. If the temperature exceeds 120°C, the plating surface may be oxidized, the base metal (e.g. copper) may diffuse into the plating, etc. This tends to reduce solderability and bonding properties. In addition, to prevent this, it is possible to shorten the processing time, but if a large number of parts are heat-treated at the same time,
The heat treatment effect may become non-uniform due to non-uniform temperature distribution or temperature increase rate. The processing time varies depending on the type of plating, the size and shape of the part, etc., but it is possible to select the appropriate conditions within a range that suppresses foaming and dewetting and does not reduce solderability, and the processing temperature is low. Further, when the plating thickness is thick, the processing time is increased, and when the processing temperature is high and the plating thickness is thin, the processing time is shortened. For example, in the case of 80℃, 2 to 5 hours, in the case of 120℃, 30
A range of minutes to 2 hours is good. It is believed that the effect of suppressing the above-mentioned problems due to the heat treatment described above is due to the change in the form of organic substances contained in the plating, resulting in deterioration.
以下、本発明の電子部品の製造方法を詳細に説明する。 Hereinafter, the method for manufacturing an electronic component of the present invention will be explained in detail.
（実施例１）
ポリイミドフィルム上にフォトエツチング法により形成
された厚さ３５μｍの銅箔からなる配線パターンおよび
リードを持つＩＣ用フィルムキャリアの銅パターンおよ
びリード上に以下に示す■のめつき条件で平均１μｍ厚
の光沢錫めっきを施した後、温度および時間を変えて熱
処理を行い、光沢錫めっきフィルムキャリアを得た。(Example 1) The copper pattern and leads of an IC film carrier having wiring patterns and leads made of copper foil with a thickness of 35 μm formed by photoetching on a polyimide film were plated under the following plating conditions. After applying bright tin plating with an average thickness of 1 μm, heat treatment was performed at different temperatures and times to obtain a bright tin plated film carrier.
■光沢錫めっきの条件
（１）浴組成
硫酸第一錫 ４０ｇ／ １硫酸
１００ｇ／ ＩＵＴＢ Ｃ３（石
原薬品製） ３０ｇ／ＩＵＴＢ Ｎ（Ｌｌ（〃
） ２０ｇ＃！ＵＴＢ 淘２（〃）１０ｇ／ｌ
ホルマリン ５ｇ／２（２）浴温
１５℃（３） 陰極電流密度
２ Ａ／ｄａ″（実施例２）
実施例１と同様に得られたＩＣ用フィルムキャリアの銅
パターンおよびリード上に以下に示す■のめつき条件で
平均１μｍ厚の光沢半田めっきを施し、更に、加熱処理
を行って光沢半田めっきフィルムキャリアを得た。■Conditions for bright tin plating (1) Bath composition Stannous sulfate 40g/1 sulfuric acid
100g/ IUTB C3 (manufactured by Ishihara Pharmaceutical) 30g/IUTB N(Ll(〃
) 20g#! UTB Tao 2 (〃) 10g/l Formalin 5g/2 (2) Bath temperature
15℃ (3) Cathode current density
2 A/da'' (Example 2) Glossy solder plating with an average thickness of 1 μm was applied to the copper pattern and leads of the IC film carrier obtained in the same manner as in Example 1 under the plating conditions shown below. A glossy solder plated film carrier was obtained by heat treatment.
■光沢半田めっきの条件 （１）浴組成 ホウフッ化第−錫（４５％） ２００ｇ／ ｉ！。■Conditions for glossy solder plating (1) Bath composition Tin-borofluoride (45%) 200g/i! .
ホウフッ化鉛（４５％） ４０ｇ／ １ホウフ
ツ化水素酸（４２％） ２４０ｇ／ ＩＵＴＢ
Ｎα１（石原薬品製） ２０ｇ／１ＵＴＢ Ｎａ２
（〃） ２０ｇ／ｉ！。Lead borofluoride (45%) 40g/1 Hydroborofluoric acid (42%) 240g/IUTB
Nα1 (manufactured by Ishihara Pharmaceutical) 20g/1UTB Na2
(〃) 20g/i! .
ホルマリン ５ｇ＃！（２）浴温
１５・ｃ（３）陰極電流密度
４ Ａ／ｄａ”以上のように得られた実施例１
および実施例２のフィルムキャリアについて、加熱リフ
ロー性および半田付性の実験を行った。加熱りフロー性
は２６０℃±５℃に保ったシリコン油浴に５秒間浸漬し
た後、付着した油を除去して外観を観察した。また、半
田付性はＭＩＬ法により２３０℃±５℃の半田浴に５秒
間浸漬した後の濡れ面積により評価した。次表はその実
験結果を示す。Formalin 5g#! (2) Bath temperature
15・c(3) Cathode current density
4 A/da'' Example 1 obtained as above
For the film carrier of Example 2, experiments were conducted on heat reflow properties and solderability. The heating flowability was determined by immersing the sample in a silicone oil bath maintained at 260°C±5°C for 5 seconds, removing the attached oil, and observing the appearance. Furthermore, solderability was evaluated by the MIL method based on the wetted area after immersion in a solder bath at 230° C.±5° C. for 5 seconds. The following table shows the experimental results.
ｉフローノ 蕾、
○：均−性良好、ボイド微小
Δ：デウェッティング発生、ボイド中
×：デウエツティング顕著、ボイド大
生旦付性…値
○：濡れ面積９５〜１００％
Δ：〃８０〜９５％
Ｘ： ／／ ３Ｑ％未満
以上の実験結果から明らかなように、リフロー後の外観
評価および半田付性評価が共にＯとなる条件は加熱温度
が８０〜１２０″Ｃの範囲であり、８０℃の場合、２〜
５時間、１２０℃の場合、３０分〜２時間の範囲が良好
である。このように比較的低温度で熱処理を行うことに
より、半田付性やボンディング性を損なうことなく、光
沢めっきの欠点である加熱溶融時の共析有機物の熱分解
によるボイドの生成やデウェッティング不良を効果的に
抑制することができ、電子部品としての信幀性の向上や
外観不良の防止を図ることが可能となる。iFrono buds, ○: Good uniformity, small voids Δ: Dewetting occurred, medium voids ×: Significant dewetting, large voids...Value ○: Wetted area 95-100% Δ:〃80-95 % In the case of 2~
In the case of 5 hours at 120°C, a range of 30 minutes to 2 hours is good. By performing heat treatment at a relatively low temperature in this way, it does not impair solderability or bonding properties, and eliminates the drawbacks of bright plating, such as the formation of voids due to thermal decomposition of eutectoid organic matter during heating and melting, and poor dewetting. can be effectively suppressed, and it is possible to improve reliability as an electronic component and prevent appearance defects.
以上説明した通り、本発明の電子部品の製造方法による
と、有機光沢剤を添加した光沢錫、もしくは光沢半田の
めっき浴を用いて金属基体上に光沢錫、もしくは光沢半
田のめっきを施し、この後、光沢錫、もしくは光沢半田
のめっきの融点未満の温度で所定時間加熱処理するよう
にしたため、耐変色性、ボンディング性および半田付性
に優れ、かつ、加熱溶融時のボイドやデウエツティング
不良の発生を防止することができる。As explained above, according to the method for manufacturing electronic components of the present invention, bright tin or bright solder is plated on a metal substrate using a bright tin or bright solder plating bath to which an organic brightener is added. After that, heat treatment is performed for a predetermined period of time at a temperature below the melting point of glossy tin or glossy solder plating, resulting in excellent discoloration, bonding and soldering properties, and eliminating voids and dewetting defects during heat melting. can be prevented from occurring.
Claims (2)
田浴を用いて金属基体上に光沢錫、もしくは半田のめっ
きを施す工程と、 前記光沢錫、もしくは光沢半田のめっきが 施された前記金属基体を前記めっきの融点未満の温度で
所定の時間加熱処理する工程とを有することを特徴とす
る電子部品の製造方法。(1) A step of plating bright tin or solder on a metal substrate using a bright tin bath or a bright solder bath to which an organic brightener has been added, and a step of plating the bright tin or solder on the metal substrate; A method for manufacturing an electronic component, comprising the step of heat-treating a metal substrate at a temperature lower than the melting point of the plating for a predetermined period of time.
度で処理する請求項第１項記載の電子部品の製造方法。(2) The method for manufacturing an electronic component according to claim 1, wherein the heat treatment is performed at a heating temperature in a range of 80 to 120°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63234370A JPH0678595B2 (en) | 1988-09-19 | 1988-09-19 | Electronic component manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63234370A JPH0678595B2 (en) | 1988-09-19 | 1988-09-19 | Electronic component manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0285395A true JPH0285395A (en) | 1990-03-26 |
| JPH0678595B2 JPH0678595B2 (en) | 1994-10-05 |
Family
ID=16969944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63234370A Expired - Lifetime JPH0678595B2 (en) | 1988-09-19 | 1988-09-19 | Electronic component manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0678595B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006249460A (en) * | 2005-03-08 | 2006-09-21 | Kobe Steel Ltd | Sn PLATING OR Sn ALLOY PLATING HAVING EXCELLENT SUPPRESSION OF WHISKER GENERATION |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62149899A (en) * | 1985-09-17 | 1987-07-03 | Kobe Steel Ltd | Production of terminal and connector made of tinned copper alloy |
-
1988
- 1988-09-19 JP JP63234370A patent/JPH0678595B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62149899A (en) * | 1985-09-17 | 1987-07-03 | Kobe Steel Ltd | Production of terminal and connector made of tinned copper alloy |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006249460A (en) * | 2005-03-08 | 2006-09-21 | Kobe Steel Ltd | Sn PLATING OR Sn ALLOY PLATING HAVING EXCELLENT SUPPRESSION OF WHISKER GENERATION |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0678595B2 (en) | 1994-10-05 |
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