JPH0669737A - Microwave semiconductor amplifier - Google Patents

Abstract

PURPOSE:To obtain the microwave semiconductor amplifier of a high gain and high output by dividing the gate electrode and the drain electrode of FET into plural number and setting the division number of the gate electrodes to be larger than the division number of the drain electrodes. CONSTITUTION:In the microwave semiconductor amplifier using a field effect transistor(FET), the gate electrodes 2 and the drain electrodes 3 of FET 1 where the number of gate fingers is increased and gate width is increased are divided into the plural electrodes lest the RF signals of the adjacent electrodes are mutually transmitted, and the division number of the gate electrodes 2 is made larger than the division number of the drain electrodes 3. The phases of the RF signals transmitted through the gate electrodes 2 become the same in the case when they pass through the center part of FET 1 and the case when they pass through a peripheral part, and they are efficiently synthesized. A synthesis circuit on an output-side becomes small, the loss of the synthesis circuit can be reduced and high output can be obtained by the high gain by making the division number of the drain electrodes 3 to be smaller than the division number of the gate electrodes 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quasi-microwave or microwave band semiconductor amplifier used for satellite communication, terrestrial microwave communication, mobile communication, etc., and more particularly to high gain and high output. A microwave semiconductor amplifier is provided.

[0002]

2. Description of the Related Art Field effect transistors (hereinafter referred to as FETs) are used in transmitters of various communication devices in the quasi-microwave and microwave bands.
High-power microwave semiconductor amplifiers are often used. This microwave semiconductor amplifier is required to have high gain and high output. FIG. 5 shows Japanese Patent Laid-Open No. 1-2067.
This is a conventional high output FET shown in No. 10 publication "Microwave integrated circuit". In the figure, 1 is a FET, 2 is a gate electrode, and 3 is a drain electrode.

Next, the operation will be described. The RF signal input from the input terminal is distributed to each gate finger of the FET 1 by the gate electrode 2 and amplified by the FET 1. The amplified signals are combined by the drain electrode 3 and taken out from the output terminal.

[0004]

Microwave semiconductor amplifiers used in transmitters of various communication devices are required to have high gain and high output performance. In a microwave semiconductor amplifier using a FET, the number of gate fingers of the FET is increased to increase the gate width in order to obtain a high output.
As a result, the length of the FET in the direction perpendicular to the gate finger is increased, and the phase of the RF signal propagating through the gate electrode is F.
It differs when passing through the central part of ET and when passing through the peripheral part. Therefore, the signals are not efficiently combined and the gain is reduced. In addition, increasing the gate width lowers the impedance on the gate side, making matching difficult.

The present invention has been made in order to solve the above problems, and provides a high gain and high output microwave semiconductor amplifier.

[0006]

A microwave semiconductor amplifier according to claim 1 is a microwave semiconductor amplifier using a field effect transistor, wherein a gate electrode and a drain electrode of the field effect transistor are divided into a plurality of parts, and the gate electrode is The number of divisions is larger than the number of divisions of the drain electrode.

A microwave semiconductor amplifier according to a second aspect of the present invention is a microwave semiconductor amplifier using a field effect transistor, wherein a gate electrode and a drain electrode of the field effect transistor are divided into a plurality of parts, and the divided electrodes are provided with predetermined adjacent electrodes. A resistor is provided between the electrodes.

A microwave semiconductor amplifier according to a third aspect of the present invention is a microwave semiconductor amplifier using a field effect transistor, wherein a length of a gate finger of the field effect transistor is changed and a path difference of an input signal from a gate electrode to a drain electrode is caused. This is to compensate for the difference in the amount of phase change.

[0009]

In the microwave semiconductor amplifier of the first aspect of the present invention configured as described above, the gate electrode is divided so that the phase of the RF signal propagating through the gate electrode passes through the central portion of the FET and the peripheral portion. The signals have almost the same phase when they pass, and the signals are efficiently combined. In addition, the impedance of the FET as viewed from each of the divided gate electrodes becomes high, which facilitates matching and realizes a high-gain microwave semiconductor amplifier. Also, by making the number of divisions of the drain electrode smaller than the number of divisions of the gate electrode, the size of the synthesis circuit on the output side becomes smaller, so the loss of the synthesis circuit can be reduced, the output drop is reduced, and the high gain, high An output microwave semiconductor amplifier can be realized.

In the microwave semiconductor amplifier according to the second aspect of the present invention configured as described above, when there is some variation in the characteristics of the FETs connected to the adjacent electrodes, the difference in the characteristics is calculated between the electrodes. It is possible to realize a small-sized microwave semiconductor amplifier which can be absorbed by a resistor provided therebetween and which stably operates with high gain and high output.

Further, claim 3 configured as described above
In the microwave semiconductor amplifier of, the length of the gate finger of the field effect transistor is changed to change the phase of the RF signal passing through the center of the gate electrode, the center of the FET, and the center of the drain electrode, and the gate electrode. Peripheral area, FE
By compensating for the difference in the amount of change in the phase due to the difference in the path of the RF signal passing through the peripheral portion of T and the peripheral portion of the drain electrode so that the amount of change in the phase becomes approximately the same, the signals are efficiently combined, A high gain and high output microwave semiconductor amplifier can be realized.

[0012]

EXAMPLES Example 1. FIG. 1 is a configuration diagram of an embodiment of an FET used in the microwave semiconductor amplifier of the present invention. In the figure, 1 is a FET, 2 is a gate electrode, and 3 is a drain electrode. The gate and drain electrodes of the FET whose gate width is increased by increasing the number of gate fingers of the FET are divided into several electrodes so that RF signals of adjacent electrodes do not propagate to each other. Further, the number of divisions of the gate electrode 2 is made larger than the number of divisions of the drain electrode 3.

Next, the operation will be described. The RF signal distributed and input to each gate electrode 2 is input to the gate finger of the FET 1. The distributed RF signal is F
The signals are amplified by ET1 in substantially the same phase. The amplified RF signals are combined by the drain electrode 3, and the outputs from the respective drain electrodes 3 are combined by an external output circuit, and output from the output terminal.

FIG. 2 shows a FET in which the electrodes of the FET are not divided,
An example of calculating the maximum available power gain of the FET using the model in which the FET in which the gate electrode is divided and the FET in which the gate electrode and the drain electrode are divided in the same number is modeled is shown. It can be seen from FIG. 2 that splitting the electrodes improves the maximum available power gain of the FET. Further, even if the drain electrode is divided together with the gate electrode, there is almost no difference in gain. By dividing the gate electrode and the drain electrode in this way, the difference in the amount of change in the phase due to the difference in the path from the gate electrode to the drain electrode is reduced, and the amplified RF signal is amplified in substantially the same phase, and the signal is efficiently generated. Since the impedances of the FETs as viewed from the respective gate electrodes are increased while being synthesized, matching is facilitated, and a high gain microwave semiconductor amplifier can be realized.

Further, if the number of divisions of the drain electrode is increased, a larger amount of power combining circuit is required for the output circuit of the FET, so that there is a problem that the output power is deteriorated due to the loss of the power combining circuit. Therefore, by making the number of divisions of the drain electrode smaller than the number of divisions of the gate electrode, the power combining circuit becomes smaller, the loss of the power combining circuit is reduced, and a high gain and high output microwave semiconductor amplifier can be realized. effective.

In FIG. 1 shown in this embodiment, the ratio of division of the gate electrode and the drain electrode is shown as 2: 1. Of course, if the division number of the gate electrode is larger than the division number of the drain electrode. It may be divided at any ratio.

Example 2. When manufacturing a FET, the characteristics may vary depending on the position even on the same wafer. In an FET in which the gate width is increased and the length is increased, there may be some variations in the characteristics of the FET connected to adjacent electrodes. In such a case, the difference in the characteristics may affect the characteristics such as the stable operation of the FET.

FIG. 3 shows another embodiment of the microwave semiconductor amplifier according to the present invention.
It is a block diagram of ET. In this FET, a resistor 4 is provided between each electrode of the gate electrode 2 divided into a plurality of parts. By providing the resistor 4 between the adjacent gate electrodes 2 in this way, the difference in characteristics between the adjacent FETs is
Is absorbed by the FET, and the FET can perform stable operation.
By simultaneously forming the resistor 4 with a thin film resistor or the like in the process of forming the FET, it is possible to realize a small-sized microwave semiconductor amplifier which operates stably. Although FIG. 3 shows an example in which the resistor 4 is provided only on the gate electrode 2, the same effect can be obtained by providing the resistor 4 on the drain electrode 3 side.

Example 3. FIG. 4 is a constitutional view of an FET used in a microwave semiconductor amplifier showing still another embodiment of the microwave semiconductor amplifier of the present invention. This FET is F
The length of the gate finger 5 is different between the central portion and the peripheral portion of the ET1. The amount of change in the phase of the RF signal of the microwave differs between the electrode portions of the gate electrode 2 and the drain electrode 3 and the gate finger 5 of the FET 1.
Therefore, as shown in FIG. 4B, the phase change amount (θ1 + θ2 + θ3) when the RF signal passes through the central portion and the change amount (θ′1 + θ′2 + θ′3) when passing the peripheral portion are equal. By setting the length of the gate finger and the length of the electrode at, signal synthesis is performed efficiently,
There is an effect that a high gain and high output microwave semiconductor amplifier can be realized.

[0020]

As described above, according to the microwave semiconductor amplifier of the first aspect, the gate electrode and the drain electrode of the FET are divided, and the number of divisions of the gate electrode is made larger than the number of divisions of the drain electrode. As a result, the synthesis circuit on the output side becomes smaller and the loss of the synthesis circuit can be reduced, so that a microwave semiconductor amplifier with high gain and high output can be obtained.

According to the microwave semiconductor amplifier of the second aspect, since the resistance is provided between the predetermined adjacent electrodes of the divided electrodes and the electrodes, the difference in the characteristics of the adjacent FETs is absorbed by the resistance, and the FETs are Since stable operation can be performed, a microwave semiconductor amplifier with high gain and high output that operates stably can be obtained.

According to the microwave semiconductor amplifier of the third aspect, the length of the gate finger of the field effect transistor is changed to compensate for the difference in the amount of change in the phase due to the path difference of the input signal from the gate electrode to the drain electrode. Thus, the signals are efficiently combined, and a high gain and high output microwave semiconductor amplifier can be obtained.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an FET used in a microwave semiconductor amplifier showing a first embodiment of the present invention.

FIG. 2 is a result of calculation of the maximum available power gain of the FET showing the effect of the first embodiment of the present invention.

FIG. 3 is a configuration diagram of an FET used in a microwave semiconductor amplifier showing a second embodiment of the present invention.

FIG. 4 is a configuration diagram of an FET used in a microwave semiconductor amplifier showing a third embodiment of the present invention.

FIG. 5: FET used in a conventional microwave semiconductor amplifier
It is a block diagram of.

[Explanation of symbols]

 1 Field Effect Transistor (FET) 2 Gate Electrode 3 Drain Electrode 4 Resistor 5 Gate Finger

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] January 11, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] Full text

[Correction method] Change

[Correction content]

[Document name] Statement

Title: Microwave semiconductor amplifier

[Claims]

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quasi-microwave or microwave band semiconductor amplifier used for satellite communication, terrestrial microwave communication, mobile communication, etc., and more particularly to high gain and high output. A microwave semiconductor amplifier is provided.

[0002]

2. Description of the Related Art Field effect transistors (hereinafter referred to as FETs) are used as transmitters for various quasi-microwave and microwave band communication devices.
High-power microwave semiconductor amplifiers are often used. This microwave semiconductor amplifier is required to have high gain and high output. FIG. 5 shows Japanese Patent Laid-Open No. 1-2067.
This is a conventional high-output FET as shown in "Microwave Integrated Circuit" of Japanese Unexamined Patent Publication No. In this figure, 1 is a FET, 2
Is a gate electrode, and 3 is a drain electrode.

Next, the operation will be described. The RF signal input from the input terminal is distributed to each gate finger of the FET 1 by the gate electrode 2 and amplified by the FET 1. The amplified signals are combined by the drain electrode 3 and taken out from the output terminal.

[0004]

Microwave semiconductor amplifiers used in transmitters of various communication devices are required to have high gain and high output performance. In a microwave semiconductor amplifier using a FET, the number of gate fingers of the FET is increased to increase the gate width in order to obtain a high output.
As a result, the length of the FET in the direction perpendicular to the gate finger is increased, and the phase of the RF signal propagating through the gate electrode is F.
It differs when passing through the central part of ET and when passing through the peripheral part. Therefore, the signals are not efficiently combined and the gain is reduced. In addition, increasing the gate width lowers the impedance on the gate side, making matching difficult.

The present invention has been made in order to solve the above problems, and provides a high gain and high output microwave semiconductor amplifier.

[0006]

A microwave semiconductor amplifier according to claim 1 is a microwave semiconductor amplifier using a field effect transistor, wherein a gate electrode and a drain electrode of the field effect transistor are divided into a plurality of parts, and the gate electrode is The number of divisions is larger than the number of divisions of the drain electrode.

According to a second aspect of the present invention, there is provided a microwave semiconductor amplifier using a field effect transistor, wherein the gate electrode and the drain electrode of the field effect transistor are divided into a plurality of parts, and the number of divisions of the gate electrode is the drain electrode. The number of divisions is greater than the number of divisions, and a resistor is provided between the electrodes and a predetermined adjacent electrode of the divided electrodes.

A microwave semiconductor amplifier according to a third aspect of the present invention is a microwave semiconductor amplifier using a field effect transistor, wherein a length of a gate finger of the field effect transistor is changed, and a path difference of an input signal from a gate electrode to a drain electrode is caused. This is to compensate for the difference in the amount of phase change.

[0009]

In the microwave semiconductor amplifier of the first aspect of the present invention configured as described above, the gate electrode is divided so that the phase of the RF signal propagating through the gate electrode passes through the central portion of the FET and the peripheral portion. The signals have almost the same phase when they pass, and the signals are efficiently combined. In addition, the impedance of the FET as viewed from each of the divided gate electrodes becomes high, which facilitates matching and realizes a high-gain microwave semiconductor amplifier. Also, by making the number of divisions of the drain electrode smaller than the number of divisions of the gate electrode, the size of the synthesis circuit on the output side becomes smaller, so the loss of the synthesis circuit can be reduced, the output drop is reduced, and the high gain, high An output microwave semiconductor amplifier can be realized.

Further, in the microwave semiconductor amplifier of the present invention configured as described above, when there is some variation in the characteristics of the FETs connected to the adjacent electrodes, the difference between the characteristics is determined by the difference between the electrodes. It is possible to realize a small-sized microwave semiconductor amplifier which can be absorbed by a resistor provided therebetween and which stably operates with high gain and high output.

Further, claim 3 configured as described above
In the microwave semiconductor amplifier of, the length of the gate finger of the field effect transistor is changed and the amount of change in the phase of the RF signal passing through the center of the gate electrode, the center of the FET and the center of the drain electrode and the gate electrode Peripheral area, FE
By compensating for the difference in the amount of change in the phase due to the difference in the path of the RF signal passing through the peripheral portion of T and the peripheral portion of the drain electrode so that the amount of change in the phase becomes approximately the same, the signals are efficiently combined, A high gain and high output microwave semiconductor amplifier can be realized.

[0012]

EXAMPLES Example 1. FIG. 1 is a configuration diagram of an embodiment of an FET used in the microwave semiconductor amplifier of the present invention. In the figure, 1 is a FET, 2 is a gate electrode, and 3 is a drain electrode. The gate and drain electrodes of the FET whose gate width is increased by increasing the number of gate fingers of the FET are divided into several electrodes so that RF signals of adjacent electrodes do not propagate to each other. Further, the number of divisions of the gate electrode 2 is made larger than the number of divisions of the drain electrode 3.

Next, the operation will be described. The RF signal distributed and input to each gate electrode 2 is input to the gate finger of the FET 1. The distributed RF signal is F
The signals are amplified by ET1 in substantially the same phase. The amplified RF signals are combined by the drain electrode 3, and the outputs from the respective drain electrodes 3 are combined by an external output circuit, and output from the output terminal.

FIG. 2 shows a FET in which the electrodes of the FET are not divided,
An example of calculating the maximum available power gain of the FET using the model in which the FET in which the gate electrode is divided and the FET in which the gate electrode and the drain electrode are divided by the same number is modeled is shown. It can be seen from FIG. 2 that splitting the electrodes improves the maximum available power gain of the FET. Further, even if the drain electrode is divided together with the gate electrode, there is almost no difference in gain. By dividing the gate electrode and the drain electrode in this way, the difference in the amount of change in the phase due to the difference in the path from the gate electrode to the drain electrode is reduced, and the amplified RF signal is amplified in substantially the same phase, and the signal is efficiently generated. Since the impedances of the FETs as viewed from the respective gate electrodes are increased while being synthesized, matching is facilitated, and a high gain microwave semiconductor amplifier can be realized.

Further, if the number of divisions of the drain electrode is increased, a larger amount of power combining circuit is required for the output circuit of the FET, so that there is a problem that the output power is deteriorated due to the loss of the power combining circuit. Therefore, by making the number of divisions of the drain electrode smaller than the number of divisions of the gate electrode, the power combining circuit becomes smaller, the loss of the power combining circuit is reduced, and a high gain and high output microwave semiconductor amplifier can be realized. effective.

In FIG. 1 shown in this embodiment, the ratio of division of the gate electrode and the drain electrode is shown as 2: 1. Of course, if the division number of the gate electrode is larger than the division number of the drain electrode. It may be divided at any ratio.

Example 2. When manufacturing a FET, the characteristics may vary depending on the position even on the same wafer. In an FET in which the gate width is increased and the length is increased, there may be some variations in the characteristics of the FET connected to adjacent electrodes. In such a case, the difference in the characteristics may affect the characteristics such as the stable operation of the FET.

FIG. 3 shows another embodiment of the microwave semiconductor amplifier according to the present invention.
It is a block diagram of ET. In this FET, a resistor 4 is provided between each electrode of the gate electrode 2 divided into a plurality of parts. By providing the resistor 4 between the adjacent gate electrodes 2 in this way, the difference in characteristics between the adjacent FETs is
Is absorbed by the FET, and the FET can perform stable operation.
By simultaneously forming the resistor 4 with a thin film resistor or the like in the process of forming the FET, it is possible to realize a small-sized microwave semiconductor amplifier which operates stably. Although FIG. 3 shows an example in which the resistor 4 is provided only on the gate electrode 2, the same effect can be obtained by providing the resistor 4 on the drain electrode 3 side.

Example 3. FIG. 4 is a constitutional view of an FET used in a microwave semiconductor amplifier showing still another embodiment of the microwave semiconductor amplifier of the present invention. This FET is F
The length of the gate finger 5 is different between the central portion and the peripheral portion of ET1. The amount of change in the phase of the RF signal of the microwave differs between the electrode portions of the gate electrode 2 and the drain electrode 3 and the gate finger 5 of the FET 1. Therefore, as shown in FIG. 4B, the amount of change in phase when the RF signal passes through the central portion (θ1 + θ2 + θ3) and the amount of change when passing through the peripheral portion (θ′1 + θ′2 + θ′3) become equal. By setting the length of the gate fingers and the length of the electrodes, the signals can be efficiently combined, and a high gain and high output microwave semiconductor amplifier can be realized.

[0020]

As described above, according to the microwave semiconductor amplifier of the first aspect, the gate electrode and the drain electrode of the FET are divided into a plurality of pieces, and the number of divisions of the gate electrode is larger than the number of divisions of the drain electrode. By doing
Since the synthesis circuit on the output side becomes smaller and the loss of the synthesis circuit can be proposed, a microwave semiconductor amplifier with high gain and high output can be obtained.

According to another aspect of the microwave semiconductor amplifier of the present invention, the gate electrode and the drain electrode of the FET are divided into a plurality of pieces, and the number of divisions of the gate electrode is made larger than the number of divisions of the drain electrode. Since a resistor is provided between the predetermined adjacent electrodes, the difference in the characteristics of the adjacent FETs is absorbed by the resistors, and the FETs can perform stable operation. Therefore, a small size, high gain, and high output stability A microwave semiconductor amplifier that operates in this way is obtained.

According to the microwave semiconductor amplifier of the third aspect of the present invention, the length of the gate finger of the FET is changed to compensate for the difference in the amount of phase change due to the path difference of the input signal from the gate electrode to the drain electrode. Signals are often synthesized, and a high gain, high output microwave semiconductor amplifier can be obtained.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an FET used in a microwave semiconductor amplifier showing a first embodiment of the present invention.

FIG. 2 is a calculation result of the maximum available power gain of the FET showing the effect of the first embodiment of the present invention.

FIG. 3 is a configuration diagram of an FET used in a microwave semiconductor amplifier showing a second embodiment of the present invention.

FIG. 4 is a configuration diagram of an FET used in a microwave semiconductor amplifier showing a third embodiment of the present invention.

FIG. 5: FET used in a conventional microwave semiconductor amplifier
It is a block diagram of.

[Explanation of symbols] 1 field effect transistor (FET) 2 gate electrode 3 drain electrode 4 resistance 5 gate finger

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kiyoharu Kiyono, 325 Kamimachiya, Kamakura City, Mitsubishi Electric Corporation Kamakura Factory (72) Masahiko Funada, 325, Kamimachiya, Kamakura City Mitsubishi Electric Corporation, Kamakura Factory

Claims (3)

[Claims] 1. In a microwave semiconductor amplifier using a field effect transistor, the gate electrode and the drain electrode of the field effect transistor are divided into a plurality of pieces, and the number of divisions of the gate electrode is larger than the number of divisions of the drain electrode. Characteristic microwave semiconductor amplifier. 2. In a microwave semiconductor amplifier using a field effect transistor, a gate electrode and a drain electrode of the field effect transistor are divided into a plurality of pieces, and a resistor is provided between a predetermined adjacent electrode of the divided electrodes and the electrode. A microwave semiconductor amplifier characterized in that 3. In a microwave semiconductor amplifier using a field effect transistor, the length of the gate finger of the field effect transistor is changed to compensate for the difference in the amount of phase change due to the path difference of the input signal from the gate electrode to the drain electrode. A microwave semiconductor amplifier characterized by: