JPH0666899A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

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Publication number
JPH0666899A
JPH0666899A JP4219865A JP21986592A JPH0666899A JP H0666899 A JPH0666899 A JP H0666899A JP 4219865 A JP4219865 A JP 4219865A JP 21986592 A JP21986592 A JP 21986592A JP H0666899 A JPH0666899 A JP H0666899A
Authority
JP
Japan
Prior art keywords
signal
power supply
test mode
circuit
supply voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4219865A
Other languages
Japanese (ja)
Other versions
JP2897540B2 (en
Inventor
Tadahiko Miura
忠彦 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4219865A priority Critical patent/JP2897540B2/en
Publication of JPH0666899A publication Critical patent/JPH0666899A/en
Application granted granted Critical
Publication of JP2897540B2 publication Critical patent/JP2897540B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To produce a test mode signal inside an IC by timing for input of two power supply, and to omit a test mode terminal so as to reduce the number of pins of the IC. CONSTITUTION:A semiconductor integrated circuit is provided with a comparator 1 which outputs a power supply voltage detecting signal S1, a comparator 2 which outputs a voltage detecting signal S2, and a delay circuit 3 in which (m) steps of T-type flip-flops F/F, each of which inputs a clock signal CK from a clock terminal TCK to a clock terminal C while inputs the voltage detecting signal S2 to a reset terminal R, and connects its output terminal Q to the clock terminal C of the next step, are connected in cascade so as to output a delay signal S3. The semiconductor integrated circuit is also provided with an OR gate 4 which inputs the signal S1 to one side and inputs the signal S3 to the other side so as to output an OR output signal S4, and an RS flip-flop 5 which inputs the signal S4 to a reset terminal NR, inputs the signal S2 to the set terminal NS, and outputs a test mode signal SN to a test mode node N so as to construct a decision circuit 6 together with the OR gate 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路に関し、
特に内部の回路のテストモード設定に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit,
Particularly, it relates to the test mode setting of the internal circuit.

【0002】[0002]

【従来の技術】従来の半導体集積回路(以下、ICと略
す)は図5に示すように、内部の回路にそれぞれ電源端
子T1,T2を介して独立した二系統の電源電圧V1,
V2を内部の回路に供給して動作させている。
2. Description of the Related Art As shown in FIG. 5, a conventional semiconductor integrated circuit (hereinafter abbreviated as an IC) has two independent power supply voltages V1 and V1 via an internal circuit via power supply terminals T1 and T2, respectively.
V2 is supplied to the internal circuit for operation.

【0003】この内部回路の回路を被試験回路11とし
て動作を試験する場合は、その試験時間の短縮を図るた
めに、図6に示す二つの電源電圧V1,V2が定常状態
に達した後にICを通常の動作状態とは異なる試験状
態、すなわちテストモードにする。
When the operation of this internal circuit is tested as the circuit under test 11, the IC is tested after the two power supply voltages V1 and V2 shown in FIG. 6 reach a steady state in order to shorten the test time. To a test state different from the normal operation state, that is, a test mode.

【0004】テストモードに設定するためには、専用に
設けられているテストモード信号入力端子TMにテスト
モード信号SMを印加し、テストモード節点Nを介して
被試験回路11に供給する。
In order to set the test mode, the test mode signal SM is applied to the dedicated test mode signal input terminal TM and is supplied to the circuit under test 11 via the test mode node N.

【0005】[0005]

【発明が解決しようとする課題】従来の半導体集積回路
では、内部の回路を試験するために専用のテストモード
端子が必要となり、ICのピン数を増加させるという問
題があった。
In the conventional semiconductor integrated circuit, there is a problem that a dedicated test mode terminal is required to test the internal circuit, and the number of IC pins is increased.

【0006】本発明の目的は、専用テストモード端子が
不要の半導体集積回路を提供することにある。
An object of the present invention is to provide a semiconductor integrated circuit which does not require a dedicated test mode terminal.

【0007】[0007]

【課題を解決するための手段】本発明の半導体集積回路
は、第1および第2の電源入力端子にそれぞれ立上り時
間の異る第1および第2の電源電圧を入力して内部の回
路を動作させ、テストモードではテストモード節点を介
して被試験回路である前記回路にテストモード信号が供
給される半導体集積回路において、前記第1および第2
の電源電圧がそれぞれ所定の基準電圧値に達した時点を
検出して対応する第1および第2の電源電圧検出信号を
出力する第1および第2の電源電圧検出回路と、前記第
2の電源電圧検出信号を所定時間遅延する遅延回路と、
前記第1の電源電圧検出信号の出力時点と前記所定時間
遅延時点との前後関係を判定する判定回路とを付加し、
前記第1の電源電圧検出信号の立上り時間を制御して前
記テストモード信号を前記テストモード節点に供給して
構成されている。
In the semiconductor integrated circuit of the present invention, the first and second power supply input terminals are supplied with first and second power supply voltages having different rise times, respectively, to operate the internal circuit. In the test mode, in the semiconductor integrated circuit in which the test mode signal is supplied to the circuit under test through the test mode node, the first and second semiconductor integrated circuits are provided.
First and second power supply voltage detection circuits that detect when the power supply voltages of the respective power supply voltages have reached predetermined reference voltage values and output corresponding first and second power supply voltage detection signals, and the second power supply. A delay circuit for delaying the voltage detection signal for a predetermined time,
A determination circuit for determining the context between the output time of the first power supply voltage detection signal and the predetermined time delay time is added,
The rising time of the first power supply voltage detection signal is controlled to supply the test mode signal to the test mode node.

【0008】[0008]

【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の第1の実施例の回路図である。本実
施例の半導体集積回路は、従来の第1,第2の電源端子
T1,T2およびクロック端子TCKとテストモード接
点Nとの間にテストモード信号発生回路10aを挿入
し、テストモード信号入力端子TMを除去した点以外は
従来の半導体集積回路と同様である。
The present invention will be described below with reference to the drawings. FIG. 1 is a circuit diagram of a first embodiment of the present invention. In the semiconductor integrated circuit of this embodiment, the test mode signal generation circuit 10a is inserted between the conventional first and second power supply terminals T1 and T2 and the clock terminal TCK and the test mode contact N, and the test mode signal input terminal is inserted. The semiconductor integrated circuit is similar to the conventional semiconductor integrated circuit except that the TM is removed.

【0009】テストモード信号発生回路10aは、正入
力端が第1の電源端子T1に接続され負入力端が基準電
圧E1に接続され電源電圧検出信号S1を出力する第1
のコンパレータ1と、正入力端が第2の電源端子T2に
接続され負入力端が基準電圧E2に接続され電圧検出信
号S2を出力する第2のコンパレータ2の、クロック端
子TCKからクロック端子Cにクロック信号CKを入力
し電圧検出信号S2をリセット端Rに入力して出力端Q
が次段のクロック端C接続されるT型フリップフロップ
F/Fをm段カスケード接続し遅延信号S3を出力する
遅延回路3と、一方に第1の電源電圧検出信号S1を入
力し他方に遅延信号S3を入力してOR出力信号S4を
出力するORゲート4と、リセット端NRにOR出力信
号S4をまたセット端NS第2の電源電圧検出信号S2
を入力してモストモード節点Nにモストモード信号SN
を出力しORゲート4と共に判定回路6を構成するRS
フリップフロップ5とを有している。
The test mode signal generating circuit 10a has a positive input end connected to the first power supply terminal T1 and a negative input end connected to the reference voltage E1 and outputs a power supply voltage detection signal S1.
From the clock terminal TCK to the clock terminal C of the comparator 1 and the second comparator 2 whose positive input end is connected to the second power supply terminal T2 and whose negative input end is connected to the reference voltage E2 and which outputs the voltage detection signal S2. The clock signal CK is input, the voltage detection signal S2 is input to the reset end R, and the output end Q
Is a delay circuit 3 in which T-type flip-flops F / F connected to the clock terminal C of the next stage are cascade-connected in m stages to output a delay signal S3, and the first power supply voltage detection signal S1 is input to one side and delayed to the other side. An OR gate 4 which receives the signal S3 and outputs an OR output signal S4, an OR output signal S4 at the reset end NR, and a second power supply voltage detection signal S2 at the set end NS.
To input the most mode signal SN to the most mode node N.
Which forms the decision circuit 6 together with the OR gate 4
It has a flip-flop 5.

【0010】ここで遅延回路3と判定回路6は遅延判定
回路9aを構成する。図2(a)〜(c)は図1の回路
の動作を説明するための各信号のタイミングチャートで
ある。まず図2(a)において第2のコンパレータ2の
出力する検出信号S2の波形について述べると、第2の
電源端子T2の電位V2が基準電圧E2以下の場合に電
源電圧検出信号S2は″L″レベルであり、電圧E2以
上となる時点t1からは検出信号S2は″H″レベルと
なる。
Here, the delay circuit 3 and the judging circuit 6 constitute a delay judging circuit 9a. 2A to 2C are timing charts of respective signals for explaining the operation of the circuit of FIG. First, referring to FIG. 2A, the waveform of the detection signal S2 output from the second comparator 2 will be described. When the potential V2 of the second power supply terminal T2 is equal to or lower than the reference voltage E2, the power supply voltage detection signal S2 is "L". This is the level, and the detection signal S2 becomes "H" level from the time t1 when the voltage becomes equal to or higher than the voltage E2.

【0011】ここで、遅延信号S3はm個のT型フリッ
プフロップの遅延回路3によってクロック信号CKのm
分周された波形となり、時点t1から周期τm後の時点
tmで″L″レベルになる。
Here, the delay signal S3 is converted into m of the clock signal CK by the delay circuit 3 of m T-type flip-flops.
The waveform becomes a frequency-divided waveform, and becomes "L" level at time tm, which is a period τm after time t1.

【0012】図2(b)はコンパレータ1の電源電圧検
出信号S1の″L″レベルに立上る時点tfが遅延信号
S3の立下り時点tmよりも早い場合の波形S1fに対
応するORゲート4のOR出力信号S4と判定回路6の
出力するテストモード信号SNの波形を示している。
FIG. 2B shows the OR gate 4 corresponding to the waveform S1f when the time tf when the power supply voltage detection signal S1 of the comparator 1 rises to the "L" level is earlier than the falling time tm of the delay signal S3. The waveforms of the OR output signal S4 and the test mode signal SN output from the determination circuit 6 are shown.

【0013】この場合、OR出力信号S4は常に″H″
レベルなので、RSフリップフロップ5はセットされる
ことなく、テストモード信号SNも常に″H″レベルで
ある。
In this case, the OR output signal S4 is always "H".
Since it is at the level, the RS flip-flop 5 is not set and the test mode signal SN is always at the "H" level.

【0014】テストモード節点Nを介して被試験回路1
1に入力するテストモード信号SNは″H″レベルの時
は通常動作で、″L″レベルの場合にテストモードに入
るので、電源電圧V1と電源電圧V2のタイミングを設
定することによって、いずれのモードにも制御できる。
Test circuit 1 via test mode node N
When the test mode signal SN input to 1 is "H" level, normal operation is performed, and when the test mode signal SN is "L" level, the test mode signal SN is entered. Therefore, by setting the timing of the power supply voltage V1 and the power supply voltage V2, You can also control the mode.

【0015】図2(c)は電源電圧V2の立上りが遅く
て電源電圧検出信号S1が時点tmに対して遅い時点t
sの波形S1Sの場合のOR出力信号S4とテストモー
ド信号SNの波形である。
In FIG. 2C, the time t at which the power supply voltage V2 rises late and the power supply voltage detection signal S1 is later than the time tm.
It is a waveform of the OR output signal S4 and the test mode signal SN in the case of the waveform S1S of s.

【0016】この場合、OR出力信号S4に時点tm〜
tsの間の″L″レベルになる期間が生じる。このため
RSフリップフロップ5がセットされ、テストモード信
号SNは時点tmから″L″レベルに保持されてテスト
モードとなる。
In this case, the OR output signal S4 changes from the time point tm to.
There is a period during which it becomes the "L" level during ts. Therefore, the RS flip-flop 5 is set, the test mode signal SN is held at the "L" level from the time tm, and the test mode is set.

【0017】なお、一般にICがこのように2系統の電
源で動作する場合に通常でも2つの電源のそれぞれの立
上り時間には数10〜数100msecの差が出る。こ
のような場合でも誤まってテストモードを約1秒にす
る。
In general, when the IC is operated by the two power sources, the rise time of each of the two power sources usually differs by several tens to several hundreds of msec. Even in such a case, the test mode is mistakenly set to about 1 second.

【0018】本実施例で説明したように、2つの電源電
圧の立上り時間のタイミング差を用いて、IC内の被試
験回路11をテストモードにできるので、図5に示した
従来のテストモード信号端子TMが不要となり、ピン数
が1つ削減できる。
As described in the present embodiment, the circuit under test 11 in the IC can be put into the test mode by using the timing difference between the rise times of the two power supply voltages. Therefore, the conventional test mode signal shown in FIG. The terminal TM becomes unnecessary and the number of pins can be reduced by one.

【0019】図3は本発明の第2の実施例の回路図であ
る。電源電圧信号S1,S2を発生する回路構成は、図
1の第1の実施例と同様なので、説明を省く。
FIG. 3 is a circuit diagram of the second embodiment of the present invention. The circuit configuration for generating the power supply voltage signals S1 and S2 is similar to that of the first embodiment shown in FIG.

【0020】本実施例のテストモード信号発生回路10
bの遅延回路9bは、第2の電源電圧検出信号S2とそ
れを所定時間をCRで遅延させるたため信号SCとを入
力するNANDゲート7と、その出力信号S7をクロッ
ク端Cに入力しデータ端Dには第1の電源電圧検出信号
SIを入力しリセット端Rに検出信号S2を入力して出
力端Qからテストモード信号SNをテストモード節点N
に出力するT型フリップフロップ8を有している。
Test mode signal generation circuit 10 of this embodiment
The delay circuit 9b of b receives the second power supply voltage detection signal S2 and the NAND gate 7 for inputting the signal SC for delaying the second power supply voltage detection signal S2 for a predetermined time by CR, and the output signal S7 thereof for input to the clock terminal C and the data terminal. The first power supply voltage detection signal SI is input to D, the detection signal S2 is input to the reset end R, and the test mode signal SN is input from the output end Q to the test mode node N.
It has a T-type flip-flop 8 for outputting to.

【0021】図4(a)〜(c)は図3の回路の動作を
説明するための各信号のタイミングチャートである。図
4(a)に示すCR遅延信号SCがNANDゲート7を
しきい値電圧Vthに達した時点tTHに対して、図4
(b)、(c)に示すようにそれぞれ第1の電源電圧検
出信号S1が早い時点tfの信号S1fと遅い場合の信
号S1Sがあり、図2で説明した第1の実施例と同様の
動作と効果がある。本実施例は設定時間tTHの安定度
は多少悪いが第1の実施例の回路に比べ部品点数が少な
くてすむという利点がある。
FIGS. 4A to 4C are timing charts of respective signals for explaining the operation of the circuit of FIG. When the CR delay signal SC shown in FIG. 4A reaches the threshold voltage Vth of the NAND gate 7 at time tTH, FIG.
As shown in (b) and (c), the first power supply voltage detection signal S1 includes the signal S1f at the early time point tf and the signal S1S when it is late, and the same operation as that of the first embodiment described in FIG. Is effective. The present embodiment is somewhat inferior in the stability of the set time tTH, but has an advantage that the number of parts is smaller than that of the circuit of the first embodiment.

【0022】[0022]

【発明の効果】以上説明したように本発明は立上りの異
なる2系統の電圧の検出回路と、遅延・判定回路を有す
るテストモード信号発生回路を設けたので、二つの電源
投入のタイミングによってICの内部でテストモード信
号を生成でき、テストモード端子を省きICのピン数削
減する効果を有する。
As described above, the present invention is provided with the test mode signal generation circuit having the two-system voltage detection circuits having different rising edges and the delay / judgment circuit. The test mode signal can be generated internally, and the effect of reducing the number of pins of the IC by omitting the test mode terminal is provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の回路図である。FIG. 1 is a circuit diagram of a first embodiment of the present invention.

【図2】図1の回路の動作を説明するための各信号のタ
イミングチャートである。
FIG. 2 is a timing chart of each signal for explaining the operation of the circuit of FIG.

【図3】本発明の第2の実施例の回路図である。FIG. 3 is a circuit diagram of a second embodiment of the present invention.

【図4】図3の回路の動作を説明するための各信号のタ
イミングチャートである。
4 is a timing chart of each signal for explaining the operation of the circuit of FIG.

【図5】従来の半導体集積回路の一例の回路図である。FIG. 5 is a circuit diagram of an example of a conventional semiconductor integrated circuit.

【図6】図5の回路の動作を説明するための各信号のタ
イミグチャートである。
FIG. 6 is a timing chart of signals for explaining the operation of the circuit of FIG.

【符号の説明】[Explanation of symbols]

1,2 コンパレータ 3 遅延回路 4 ORゲート 5 RSフリップフロップ 6 判定回路 7 NANDゲート 8 D型フリップフロップ 9,9a 遅延判定回路 10,10a テストモード信号発生回路 11 被試験回路 T1,T2 第1,第2の電源入力端子 TCK クロック信号端子 V1,V2 第1,第2の電源電圧 S1f 通常モード設定信号 S1S テスモード設定信号 SN テストモード信号 S1,S2 第1,第2の電源電圧検出信号 S3 遅延素子 S4 OR出力信号 N テストモード節点 E1,E2 基準電圧 CK クロック信号 τm 設定期間 t1,t2,tm,ts 時点 1, 2 Comparator 3 Delay Circuit 4 OR Gate 5 RS Flip-Flop 6 Judgment Circuit 7 NAND Gate 8 D-Type Flip-Flop 9, 9a Delay Judgment Circuit 10, 10a Test Mode Signal Generation Circuit 11 Tested Circuit T1, T2 First, First 2 power supply input terminal TCK clock signal terminal V1, V2 first and second power supply voltage S1f normal mode setting signal S1S test mode setting signal SN test mode signal S1, S2 first and second power supply voltage detection signal S3 delay element S4 OR output signal N Test mode node E1, E2 Reference voltage CK Clock signal τm Setting period t1, t2, tm, ts

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 第1および第2の電源入力端子にそれぞ
れ立上り時間の異る第1および第2の電源電圧を入力し
て内部の回路を動作させ、テストモードではテストモー
ド節点を介して被試験回路である前記回路にテストモー
ド信号が供給される半導体集積回路において、前記第1
および第2の電源電圧がそれぞれ所定の基準電圧値に達
した時点を検出して対応する第1および第2の電源電圧
検出信号を出力する第1および第2の電源電圧検出回路
と、前記第2の電源電圧検出信号を所定時間遅延する遅
延回路と、前記第1の電源電圧検出信号の出力時点と前
記所定時間遅延時点との前後関係を判定する判定回路と
を付加し、前記第1の電源電圧検出信号の立上り時間を
制御して前記テストモード信号を前記テストモード節点
に供給することを特徴とする半導体集積回路。
1. A first and a second power supply input terminals are supplied with first and second power supply voltages having different rise times, respectively, to operate an internal circuit, and in a test mode, a voltage is supplied via a test mode node. In a semiconductor integrated circuit in which a test mode signal is supplied to the circuit which is a test circuit,
And first and second power supply voltage detection circuits that detect the time when the second power supply voltage has reached a predetermined reference voltage value and output corresponding first and second power supply voltage detection signals, respectively. A delay circuit for delaying the power supply voltage detection signal of No. 2 for a predetermined time, and a judgment circuit for judging the front-back relation between the output time of the first power supply voltage detection signal and the predetermined time delay time are added, and the first circuit is added. A semiconductor integrated circuit, characterized in that the rising time of a power supply voltage detection signal is controlled to supply the test mode signal to the test mode node.
JP4219865A 1992-08-19 1992-08-19 Semiconductor integrated circuit Expired - Lifetime JP2897540B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4219865A JP2897540B2 (en) 1992-08-19 1992-08-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4219865A JP2897540B2 (en) 1992-08-19 1992-08-19 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0666899A true JPH0666899A (en) 1994-03-11
JP2897540B2 JP2897540B2 (en) 1999-05-31

Family

ID=16742273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4219865A Expired - Lifetime JP2897540B2 (en) 1992-08-19 1992-08-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JP2897540B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318432B1 (en) * 1999-10-30 2001-12-24 박종섭 Circuit for sharing test pin and fuse pin in ic card

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318432B1 (en) * 1999-10-30 2001-12-24 박종섭 Circuit for sharing test pin and fuse pin in ic card

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JP2897540B2 (en) 1999-05-31

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