JPH0666392B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device

Info

Publication number
JPH0666392B2
JPH0666392B2 JP9871188A JP9871188A JPH0666392B2 JP H0666392 B2 JPH0666392 B2 JP H0666392B2 JP 9871188 A JP9871188 A JP 9871188A JP 9871188 A JP9871188 A JP 9871188A JP H0666392 B2 JPH0666392 B2 JP H0666392B2
Authority
JP
Japan
Prior art keywords
adhesive sheet
pressure
semiconductor wafer
sheet
sensitive adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9871188A
Other languages
Japanese (ja)
Other versions
JPH01270245A (en
Inventor
隆 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP9871188A priority Critical patent/JPH0666392B2/en
Publication of JPH01270245A publication Critical patent/JPH01270245A/en
Publication of JPH0666392B2 publication Critical patent/JPH0666392B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に関し、特に半導体ウェ
ハーを個々の素子に分離する、所謂ペレッタイズの方法
に関するものである。
The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a so-called pelletizing method for separating a semiconductor wafer into individual elements.

〔従来の技術〕[Conventional technology]

従来のペレッタイズは、第4図(a)〜(d)に示すように、
フラット・リング1に貼り付けた第1の粘着シート2の
表面に半導体ウェハー(以下、単にウェハーとのみ呼
称)3を貼り付け(a図)、次に厚さ20〜50μm程
度のプレー4により、ウェハー3を第1の粘着シート2
に達する深さで碁盤目状に切り込み5を入れて半導体素
子(以下、ペレットと呼称)3′とし(b図)、次に、
第1の粘着シート2の裏面、即ち、ペレット3′の貼り
付けられた面とは対向する面に、第1の粘着シート2よ
りも大きい第2の粘着シート6を貼り付け(c図)、台
7の上にセットされた拡大リング8上に上記シートを載
せ、第2の粘着シート6の端部を拡大治具9で挟んでこ
れを下に押し下げることにより第2の粘着シートを拡大
し、これに伴なって第1の拡大シート2を、ひいてはペ
レット3′の相互間隔を拡げる方法(d図)で行なって
いた。
Conventional pelletizing, as shown in Figure 4 (a) ~ (d),
A semiconductor wafer (hereinafter, simply referred to as a wafer) 3 is attached to the surface of the first adhesive sheet 2 attached to the flat ring 1 (FIG. A), and then a play 4 having a thickness of about 20 to 50 μm is used. Wafer 3 to first adhesive sheet 2
To make a semiconductor element (hereinafter referred to as a pellet) 3 '(Fig. B) by making cuts 5 in a grid pattern at a depth reaching
A second adhesive sheet 6 larger than the first adhesive sheet 2 is attached to the back surface of the first adhesive sheet 2, that is, the surface opposite to the surface to which the pellets 3'are attached (FIG. C), The above-mentioned sheet is placed on the expansion ring 8 set on the base 7, and the end portion of the second adhesive sheet 6 is sandwiched by the expansion jig 9 and pushed down to expand the second adhesive sheet. Along with this, the first expansion sheet 2 was expanded by the method (FIG. D) for expanding the mutual intervals of the pellets 3 '.

ここで、ペレット3′の相互間隔を拡げるのは、第1及
び第2の粘着シートの裏側からニードルで突き上げてペ
レット3′をピック・アップする際に、隣接するペレッ
トがぶつかり合ったり、ピック・アップの治具が隣接の
ペレットに接触するなどして損傷を与えることを防ぐ為
に行なうものである。
Here, the interval between the pellets 3'is increased so that when the pellets 3'are picked up by pushing up with needles from the back side of the first and second adhesive sheets, adjacent pellets collide with each other, This is done to prevent the up jig from damaging by contacting adjacent pellets.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上述した従来のペレッタイズの方法は、第2の粘着シー
トを拡げることにより間接的に第1の粘着シートを拡げ
るので、第2の粘着シートの周辺部が伸び易い一方で、
第1と第2の粘着シートが重なった部分は伸びにくく、
ペレット3′の相互間隔が十分には得られない欠点があ
った。特に、ペレットの寸法が1mm前後の半導体素子で
は、切り込みの数も増加し、最低限のペレット相互間隔
(0.4〜0.5mm)を得るには第1の粘着シートの拡大率を
大きくしなければならない。その為には、第2の粘着シ
ートの拡大率をもっと大きくする必要があるが、その前
に第2の粘着シートが破れてしまい、上記の必要ペレッ
ト相互間隔が得られないことがあった。
In the above-described conventional pelletizing method, the first adhesive sheet is indirectly expanded by expanding the second adhesive sheet, so that the peripheral portion of the second adhesive sheet is easily stretched.
The portion where the first and second adhesive sheets overlap is difficult to stretch,
There is a drawback that the mutual intervals of the pellets 3'cannot be sufficiently obtained. Particularly, in the case of a semiconductor element having a pellet size of about 1 mm, the number of cuts also increases, and the enlargement ratio of the first adhesive sheet must be increased in order to obtain a minimum pellet mutual interval (0.4 to 0.5 mm). . For that purpose, it is necessary to further increase the enlargement ratio of the second pressure-sensitive adhesive sheet, but before that, the second pressure-sensitive adhesive sheet was torn, and the above-mentioned necessary mutual interval of pellets could not be obtained.

〔発明の従来技術に対する相違点〕[Differences from the Prior Art of the Invention]

上述した従来のペレッタイズ法に対し、第1と第2の粘
着シートが重なった部分をも効率的に拡大することがで
きるだけでなく、拡大率に方向性を持たせることができ
るという相違点を有する。
It differs from the above-described conventional pelletizing method in that not only the overlapping portion of the first and second adhesive sheets can be efficiently enlarged, but also the enlargement ratio can be given directionality. .

〔課題を解決するために手段〕[Means for solving the problem]

本発明のペレッタイズの方法は、第3の粘着シートの片
を少なくとも2枚第1及び第2の粘着シートの双方にま
たがって貼り付け、第2及び第3の粘着シートを拡大す
ることにより、第1の粘着シートを拡大する特徴を有し
ている。
The method of pelletizing of the present invention comprises attaching at least two pieces of the third adhesive sheet to both the first and second adhesive sheets, and expanding the second and third adhesive sheets, It has a feature of enlarging the pressure-sensitive adhesive sheet of No. 1.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.

第1図には、リニア・センサーのペレッタイズの本発明
を適用した実施例を平面図(a図)と断面図(b図)で
示した。リニア・センサーはフォト・ダイオードが一列
に100〜10000個並んだ光学センサーであり、ペ
レット寸法は1mm×5〜100mmのかなりの長尺寸法と
なる。このようなペレットの場合、(a)図に示したよう
にウェハー3の切り込み本数は、X方向は100本以
上、Y方向は3〜5本となる。このウェハーの切り込み
5を、最低限0.4〜0.5mmの間隔に広げようとすると、当
然X方向の拡大率を大きくしなければならない。これを
実現する為に、短冊状の第3の粘着シート10を4枚
(a)図のように貼り付けると効果的である。即ち、幅約
25mm、長さ約50mmの短冊状粘着シートをX軸に寄せ
て、X軸及びY軸に関してほぼ対称に且つ放射状に貼り
付ける。第1と第3の粘着シートの重なり幅は約10mm
とし、拡大治具による押さえは、第2及び第3の粘着シ
ートの重なり部となるようにする。これにより、第4図
の方法で拡大すると、第1の粘着シートの拡大はY方向
よりもX方向が大きくなり、第1図(c)のように楕円形
に拡大される。
FIG. 1 is a plan view (FIG. A) and a sectional view (FIG. B) showing an embodiment of the pelletizing of a linear sensor to which the present invention is applied. The linear sensor is an optical sensor in which 100 to 10000 photodiodes are arranged in a line, and the pellet size is a considerably long size of 1 mm x 5 to 100 mm. In the case of such pellets, the number of cuts in the wafer 3 is 100 or more in the X direction and 3 to 5 in the Y direction as shown in FIG. If the notch 5 of the wafer is to be widened to a distance of at least 0.4 to 0.5 mm, the enlargement ratio in the X direction must be increased. To achieve this, four strip-shaped third adhesive sheets 10 are used.
(a) It is effective to attach as shown in the figure. That is, a strip-shaped pressure-sensitive adhesive sheet having a width of about 25 mm and a length of about 50 mm is brought close to the X axis and is attached in a substantially symmetrical and radial manner with respect to the X axis and the Y axis. The overlapping width of the first and third adhesive sheets is about 10 mm
Then, the pressing by the expansion jig is made to be the overlapping portion of the second and third adhesive sheets. As a result, when enlarged by the method of FIG. 4, the enlargement of the first pressure-sensitive adhesive sheet becomes larger in the X direction than in the Y direction, and is enlarged in an elliptical shape as shown in FIG. 1 (c).

X方向,Y方向の拡大比率は、第3の粘着シートの貼付
位置や枚数によって任意に変えることができる。
The enlargement ratios in the X and Y directions can be arbitrarily changed depending on the attachment position and the number of the third adhesive sheet.

例えば、5000〜10000個のフォト・ダイオード
が一列に並んだリニア・センサーの場合は、そのペレッ
ト・サイズは0.5mm×70mm程度となり、第2図に示す
ように、有効ペレットはウェハーの中央部一列しか採れ
ない。このような場合、図のX方向の拡大率を最大限に
取る必要があり、第3の粘着シート10は、X方向に2
枚貼れば良い。勿論、シート10の大きさは、第1,第
2のシートの材質や厚さ、あるいはシートを拡大する装
置の特性に合わせて、色々に選ぶことができる。この場
合も、第3のシート10は第1のシート2の一部に重な
り、且つ第2のシートと第3のシートの重なり部を拡大
治具で押さえて拡大する必要があることは、言うまでも
ない。
For example, in the case of a linear sensor in which 5000 to 10000 photodiodes are arranged in a line, the pellet size is about 0.5 mm × 70 mm, and as shown in FIG. 2, effective pellets are in a line in the center of the wafer. I can only take it. In such a case, it is necessary to maximize the enlargement ratio in the X direction in the figure, and the third adhesive sheet 10 is
Just stick one. Of course, the size of the sheet 10 can be variously selected according to the materials and thicknesses of the first and second sheets, or the characteristics of the apparatus for enlarging the sheet. In this case as well, it goes without saying that the third sheet 10 needs to overlap a part of the first sheet 2 and the overlapping portion of the second sheet and the third sheet needs to be pressed by an expansion jig to be expanded. Yes.

また、Y方向の拡大比率を高めたければ、第3図に示す
ように、第3の粘着シートをY軸に寄せて貼ればよい。
しかし、第3図の例ではペレットのX方向,Y方向の寸
法比が前例の場合に比べてそれ程大きくはないので、第
3の粘着シートはY軸に対して開いた角度で貼れる。
Further, if it is desired to increase the enlargement ratio in the Y direction, the third adhesive sheet may be attached to the Y-axis as shown in FIG.
However, in the example of FIG. 3, since the dimensional ratio of the pellets in the X and Y directions is not so large as compared with the case of the previous example, the third adhesive sheet can be attached at an angle opened with respect to the Y axis.

第3の粘着シートの形状は、短冊形に限らず、楕円形や
三角形など、拡大装置や第1,第2の粘着シートの伸び
率などの諸特性に合わせて、任意に選べることは言うま
でもない。
Needless to say, the shape of the third adhesive sheet is not limited to a strip shape, and can be arbitrarily selected according to various characteristics such as an enlargement device and elongation rates of the first and second adhesive sheets such as an ellipse and a triangle. .

〔発明の効果〕〔The invention's effect〕

以上、詳細に説明したように、本発明によりウェハーの
X方向とY方向の拡大比率を任意に変えることができ、
エリアセンサーなどの縦横比が極端に大きいペレットに
対しても、必要なペレット間隔が得られる効果がある。
As described above in detail, according to the present invention, the enlargement ratio of the wafer in the X direction and the Y direction can be arbitrarily changed,
Even for pellets having an extremely large aspect ratio such as an area sensor, the required pellet spacing can be obtained.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の実施例を示す平面図(a,c図)と断面
図(b図)、第2図、第3図は本発明の他の実施例を示
す平面図、第4図は従来の製造方法を示す断面図であ
る。 1……フラット・リング、2……第1の粘着シート、3
……半導体ウェハー、3′……半導体素子(ペレッ
ト)、4……ブレード、5……切り込み、6……第2の
粘着シート、7……台、8……拡大リング、9……拡大
治具、10……第3の粘着シート。
FIG. 1 is a plan view (a, c) and a cross-sectional view (b) showing an embodiment of the present invention, FIG. 2 and FIG. 3 are plan views showing another embodiment of the present invention, and FIG. [FIG. 6] is a cross-sectional view showing a conventional manufacturing method. 1 ... flat ring, 2 ... first adhesive sheet, 3
... Semiconductor wafer, 3 '... Semiconductor element (pellet), 4 ... Blade, 5 ... Notch, 6 ... Second adhesive sheet, 7 ... Table, 8 ... Expansion ring, 9 ... Expansion cure Tool, 10 ... Third adhesive sheet.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体ウェハーの裏面に第1の粘着シート
を貼り付け、該半導体ウェハーを前記第1の粘着シート
に達する深さで碁板目状に切り込みを設け、更に前記第
1の粘着シートの前記半導体ウェハーと対する面に第1
の粘着シートよりも大きい第2の粘着シートを貼り付
け、該第2の粘着シートを拡大することにより切り込み
を入れた前記半導体ウェハーの個片の相互位置を拡大す
る方法に於いて、前記第1及び第2の粘着シートのみに
またがって、双方の表面に第3の粘着シートの片を少な
くとも2枚互いに重ならないように貼り付け、前記第
2,第3の粘着シートを拡大することにより前記第1の
粘着シートを拡大することを特徴とする半導体装置の製
造方法。
1. A first adhesive sheet is attached to the back surface of a semiconductor wafer, and the semiconductor wafer is provided with notches in a grid pattern at a depth reaching the first adhesive sheet, and the first adhesive sheet is further provided. On the surface of the semiconductor wafer facing the semiconductor wafer.
A second adhesive sheet larger than the first adhesive sheet, and enlarging the second adhesive sheet to enlarge the mutual position of the cut semiconductor wafer pieces. And at least two pieces of the third pressure-sensitive adhesive sheet are attached to both surfaces so as not to overlap each other across only the second pressure-sensitive adhesive sheet, and the second and third pressure-sensitive adhesive sheets are enlarged so that the first pressure-sensitive adhesive sheet is expanded. 1. A method for manufacturing a semiconductor device, which comprises enlarging the pressure-sensitive adhesive sheet of 1.
JP9871188A 1988-04-20 1988-04-20 Method for manufacturing semiconductor device Expired - Lifetime JPH0666392B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9871188A JPH0666392B2 (en) 1988-04-20 1988-04-20 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9871188A JPH0666392B2 (en) 1988-04-20 1988-04-20 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPH01270245A JPH01270245A (en) 1989-10-27
JPH0666392B2 true JPH0666392B2 (en) 1994-08-24

Family

ID=14227099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9871188A Expired - Lifetime JPH0666392B2 (en) 1988-04-20 1988-04-20 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0666392B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532934A (en) * 1992-07-17 1996-07-02 Lsi Logic Corporation Floorplanning technique using multi-partitioning based on a partition cost factor for non-square shaped partitions
US5340772A (en) * 1992-07-17 1994-08-23 Lsi Logic Corporation Method of increasing the layout efficiency of dies on a wafer and increasing the ratio of I/O area to active area per die
US5561086A (en) * 1993-06-18 1996-10-01 Lsi Logic Corporation Techniques for mounting semiconductor dies in die-receiving areas having support structure having notches
JPH07302773A (en) * 1994-05-06 1995-11-14 Texas Instr Japan Ltd Semiconductor wafer and semiconductor device
JP2012129473A (en) * 2010-12-17 2012-07-05 Sekisui Chem Co Ltd Dicing-die bonding tape

Also Published As

Publication number Publication date
JPH01270245A (en) 1989-10-27

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