JPH01270245A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH01270245A JPH01270245A JP63098711A JP9871188A JPH01270245A JP H01270245 A JPH01270245 A JP H01270245A JP 63098711 A JP63098711 A JP 63098711A JP 9871188 A JP9871188 A JP 9871188A JP H01270245 A JPH01270245 A JP H01270245A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive sheet
- adhesive
- sheets
- wafer
- adhesive sheets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000853 adhesive Substances 0.000 claims abstract description 52
- 230000001070 adhesive effect Effects 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims description 9
- 239000008188 pellet Substances 0.000 description 20
- 238000005453 pelletization Methods 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に半導体ウェ
ハーを個々の素子に分離する、所謂ペレッタイズの方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a so-called pelletizing method for separating a semiconductor wafer into individual elements.
従来のベレッタイズは、第4図(a)〜(d)に示すよ
うに、フラット・リング1に貼り付けた第1の粘着シー
ト2の表面に半導体ウェハー(以下、単にウェハーとの
み呼称)3を貼り付け(a図)、次に厚さ20〜50μ
m程度のブレード4により、ウェハー3を第1の粘着シ
ート2に達する深さで基盤目状に切り込み5を入れて半
導体素子(以下、ペレットと呼称)3′としくb図)、
次に、第1の粘着シート2の裏面、即ち、ペレット3′
の貼り付けられた面とは対向する面に、第1の粘着シー
ト2よりも大きい第2の粘着シート6を貼り付け(0図
)、台7の上にセットさhた拡大リング8上に上記シー
トを載せ、第2の粘着シート6の端部を拡大治具9で挟
んでこれを下に押し下げることにより第2の粘着シート
を拡大し、これに伴なって第1の拡大シート2を、ひい
てはペレット3′の相互間隔を拡げる方法(d図)で行
なっていた。In conventional bulletizing, a semiconductor wafer (hereinafter referred to simply as a wafer) 3 is placed on the surface of a first adhesive sheet 2 attached to a flat ring 1, as shown in FIGS. 4(a) to 4(d). Paste (Figure a), then thickness 20-50μ
Using a blade 4 of approximately m length, cut 5 into the wafer 3 in the shape of a substrate to a depth that reaches the first adhesive sheet 2 to form semiconductor elements (hereinafter referred to as pellets) 3' (Figure b).
Next, the back side of the first adhesive sheet 2, that is, the pellet 3'
A second adhesive sheet 6 larger than the first adhesive sheet 2 is pasted on the surface opposite to the pasted surface (Fig. 0), and placed on an enlarging ring 8 set on a stand 7. The above-mentioned sheet is placed on the second adhesive sheet 6, and the ends of the second adhesive sheet 6 are held between the enlarging jig 9 and pushed down to enlarge the second adhesive sheet, and the first enlarged sheet 2 is expanded accordingly. This was done by increasing the distance between the pellets 3' (Fig. d).
ココで、ペレット3′の相互間隔を拡げるのは、第1及
び第2の粘着シートの裏側からニードルで突き上げてペ
レット3′をビック・アップする際に、隣接するペレッ
トがぶつかり合ったり、ピック・アップの治具が隣接の
ペレットに接触するなどして損傷を与えることを防ぐ為
に行なうものである。The reason why the distance between the pellets 3' is widened is that when the pellets 3' are pushed up from the back side of the first and second adhesive sheets with a needle to start up the pellets 3', adjacent pellets may collide with each other or pick up. This is done to prevent the up jig from contacting adjacent pellets and damaging them.
上述した従来のベレッタイズの方法は、第2の粘着シー
トを拡げることにより間接的に第1の粘着シートを拡げ
るので、第2の粘着シートの周辺部が伸び易い一方で、
第1と第2の粘着シートが重なった部分は伸びにくく、
ペレット3′の相互間隔が十分には得られない欠点があ
った。特に、ペレットの寸法が1 mm前後の半導体素
子では、切り込みの数も増加し、最低限のペレット相互
間隔(0,4〜0.5mm)を得るには第1の粘着シー
トの拡大率を大きくしなければならない。その為には、
第2の粘着シートの拡大率をもっと大きくする必要があ
るが、その前に第2の粘着シートが破れてしまい、上記
の必要ペレット相互間隔が得られないことがあった。In the conventional bulletizing method described above, the first adhesive sheet is expanded indirectly by expanding the second adhesive sheet, so while the peripheral part of the second adhesive sheet is easy to stretch,
The area where the first and second adhesive sheets overlap is difficult to stretch.
There was a drawback that the mutual spacing between the pellets 3' could not be obtained sufficiently. In particular, in semiconductor devices where the pellet size is around 1 mm, the number of notches increases, and in order to obtain the minimum interval between pellets (0.4 to 0.5 mm), the expansion ratio of the first adhesive sheet must be increased. Must. For that purpose,
Although it is necessary to increase the magnification ratio of the second adhesive sheet, the second adhesive sheet may be torn before that, and the above-mentioned required interval between pellets may not be obtained.
上述した従来のペレッタイズ法に対し、第1と第2の粘
着シートが重なった部分をも効率的に拡大することがで
きるだけでなく、拡大率に方向性を持たせることができ
るという相違点を有する。This method differs from the conventional pelletizing method described above in that it is not only possible to efficiently enlarge the overlapped portion of the first and second adhesive sheets, but also to have directionality in the enlargement rate. .
本発明のベレッタイズの方法は、第3の粘着シートの片
を少なくとも2枚第1及び第2の粘着シートの双方にま
たがって貼り付け、第2及び第3の粘着シートを拡大す
ることにより、第1の粘着シートを拡大する特徴を有し
ている。The bulletizing method of the present invention includes attaching at least two pieces of the third adhesive sheet across both the first and second adhesive sheets, and enlarging the second and third adhesive sheets. It has the feature of enlarging the adhesive sheet of No. 1.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図には、リニア・センサーのベレッタイズに本発明
を適用した実施例を平面図(a図)と断面図(b図)で
示した。リニア・センサーはフォト・ダイオードが一列
に100〜10000個並んだ光学センサーであり、ペ
レット寸法は1鵬×5〜100mmのかなりの長尺寸法
となる。このようなペレットの場合、(a)図に示した
ようにウェハー3の切り込み本数は、X方向は100本
以上、X方向は3〜5本となる。このウェハーの切り込
み5を、最低限0.4〜0.5mの間隔に広げようとす
ると、当然X方向の拡大率を大きくしなければならない
。これを実現する為に、短冊状の第3の粘着シート10
を4枚(a)図のように貼り付けると効果的である。即
ち、幅約25mm、長さ約50mmの短冊状粘着シート
をY軸に寄せて、Y軸及びY軸に関してほぼ対称に且つ
放射状に貼り付ける。FIG. 1 shows a plan view (a) and a cross-sectional view (b) of an embodiment in which the present invention is applied to pelletizing a linear sensor. A linear sensor is an optical sensor in which 100 to 10,000 photodiodes are lined up in a row, and the pellet size is quite long, measuring 1 mm x 5 to 100 mm. In the case of such pellets, the number of cuts in the wafer 3 is 100 or more in the X direction and 3 to 5 in the X direction, as shown in FIG. In order to widen the notches 5 of this wafer to a minimum interval of 0.4 to 0.5 m, it is naturally necessary to increase the magnification ratio in the X direction. In order to realize this, a third adhesive sheet 10 in the form of a strip is used.
It is effective to paste four sheets as shown in Figure (a). That is, a strip-shaped adhesive sheet having a width of about 25 mm and a length of about 50 mm is brought to the Y axis and pasted radially and approximately symmetrically with respect to the Y axis.
第1と第3の粘着シートの重なり幅は約10mmとし、
拡大治具による押さえは、第2及び第3の粘着シートの
重なり部となるようにする。これにより、第4図の方法
で拡大すると、第1の粘着シートの拡大はX方向よりも
X方向が大きくなり、第1図(c)のように楕円形に拡
大される。The overlapping width of the first and third adhesive sheets is approximately 10 mm,
The expansion jig is pressed so that the second and third adhesive sheets overlap. As a result, when the first pressure-sensitive adhesive sheet is enlarged using the method shown in FIG. 4, the first pressure-sensitive adhesive sheet is enlarged in the X direction more than in the X direction, and is enlarged into an elliptical shape as shown in FIG. 1(c).
X方向、X方向の拡大比率は、第3の粘着シートの貼付
位置や枚数によって任意に変えることができる。The enlargement ratio in the X direction and the X direction can be arbitrarily changed depending on the attachment position and number of third adhesive sheets.
例えば、5000〜10000個のフォト・ダイオード
が一列に並んだリニア・センサーの場合は、そのペレッ
ト・サイズは0.5mmX70mm程度となり、第2図
に示すように、有効ペレットはウェハーの中央部−列し
か採れない。このような場合、図のX方向の拡大率を最
大限に取る必要があり、第3の粘着シート10は、X方
向に2枚貼れば良い。勿論、シート10の大きさは、第
1゜第2のシートの材質や厚さ、あるいはシートを拡大
する装置の特性に合わせて、色々に選ぶことができる。For example, in the case of a linear sensor in which 5,000 to 10,000 photodiodes are arranged in a row, the pellet size is approximately 0.5 mm x 70 mm, and as shown in Figure 2, the effective pellet is located in the center of the wafer - in the row. I can only collect it. In such a case, it is necessary to maximize the magnification in the X direction of the figure, and it is sufficient to attach two third adhesive sheets 10 in the X direction. Of course, the size of the sheet 10 can be selected in various ways depending on the materials and thicknesses of the first and second sheets, or the characteristics of the device for enlarging the sheets.
この場合も、第3のシート10は第1のシート2の一部
に重なり、且つ第2のシートと第3のシートの重なり部
を拡大治具で押さえて拡大する必要があることは、言う
までもない。In this case as well, it goes without saying that the third sheet 10 overlaps a part of the first sheet 2, and that the overlapping portion of the second sheet and the third sheet needs to be pressed and enlarged with an enlarging jig. stomach.
また、X方向の拡大比率を高めたければ、第3図に示す
ように、第3の粘着シートをY軸に寄せて貼ればよい。Furthermore, if it is desired to increase the magnification ratio in the X direction, a third adhesive sheet may be attached closer to the Y axis as shown in FIG.
しかし、第3図の例ではペレットのX方向、X方向の寸
法比が前例の場合に比べてそれ程大きくはないので、第
3の粘着シートはY軸に対して開いた角度で貼れる。However, in the example of FIG. 3, the dimensional ratio of the pellet in the X direction and the X direction is not so large compared to the previous example, so the third adhesive sheet can be applied at an open angle to the Y axis.
第3の粘着シートの形状は、短冊形に限らず、楕円形や
三角形など、拡大装置や第1.第2の粘着シートの伸び
率などの緒特性に合わせて、任意に選べることは言うま
でもない。The shape of the third adhesive sheet is not limited to a rectangular shape, but may be oval, triangular, etc. Needless to say, it can be arbitrarily selected depending on the adhesive properties such as the elongation rate of the second adhesive sheet.
以上、詳細に説明したように、本発明によりウェハーの
X方向とX方向の拡大比率を任意に変えることができ、
エリアセンサーなどの縦横比が極端に大きいペレットに
対しても、必要なペレット間隔が得られる効果がある。As explained in detail above, according to the present invention, the enlargement ratio of the wafer in the X direction and the X direction can be changed arbitrarily,
It is effective in obtaining the necessary pellet spacing even for pellets with an extremely large aspect ratio, such as those used in area sensors.
4、図面の簡単な説明 ゛
の実施例を示す平面図、第4図は従来の製造方法を示す
断面図である。4. Brief Description of the Drawings FIG. 4 is a plan view showing the embodiment of FIG. 4, and a sectional view showing a conventional manufacturing method.
1・・・・・・フラット・リング、2・・・・・・第1
の粘着シート、3・・・・・・半導体ウェハー、3′・
・・・・・半導体素子(ペレット)、4・・・・・・ブ
レード、5・・・・・・切り込み、6・・・・・・第2
の粘着シート、7・・・・・・台、8・・・・・・拡大
リング、9・・・・・・拡大治具、1゛0・・・・・・
第3の粘着シート。1...Flat ring, 2...1st
adhesive sheet, 3...semiconductor wafer, 3'...
... Semiconductor element (pellet), 4 ... Blade, 5 ... Notch, 6 ... Second
Adhesive sheet, 7... stand, 8... enlarging ring, 9... enlarging jig, 1゛0......
Third adhesive sheet.
代理人 弁理士 内 原 音 第1図 第1図 (C)Agent Patent Attorney Oto Uchihara Figure 1 Figure 1 (C)
Claims (1)
、該半導体ウェハーを前記第1の粘着シートに達する深
さで碁板目状に切り込みを設け、更に前記第1の粘着シ
ートの前記半導体ウェハーと対する面に第1の粘着シー
トよりも大きい第2の粘着シートを貼り付け、該第2の
粘着シートを拡大することにより切り込みを入れた前記
半導体ウェハーの個片の相互位置を拡大する方法に於い
て、前記第1及び第2の粘着シートのみにまたがって、
双方の表面に第3の粘着シートの片を少なくとも2枚互
いに重ならないように貼り付け、前記第2、第3の粘着
シートを拡大することにより前記第1の粘着シートを拡
大することを特徴とする半導体装置の製造方法。A first adhesive sheet is pasted on the back side of a semiconductor wafer, cuts are made in the semiconductor wafer in a grid pattern with a depth that reaches the first adhesive sheet, and further the semiconductor wafer and the first adhesive sheet are bonded to each other. In the method, a second adhesive sheet larger than the first adhesive sheet is affixed to the opposing surface, and the second adhesive sheet is enlarged to enlarge the relative positions of the individual pieces of the semiconductor wafer in which the incisions have been made. and spanning only the first and second adhesive sheets,
At least two pieces of a third adhesive sheet are pasted on both surfaces so as not to overlap each other, and the first adhesive sheet is expanded by expanding the second and third adhesive sheets. A method for manufacturing a semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9871188A JPH0666392B2 (en) | 1988-04-20 | 1988-04-20 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9871188A JPH0666392B2 (en) | 1988-04-20 | 1988-04-20 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01270245A true JPH01270245A (en) | 1989-10-27 |
JPH0666392B2 JPH0666392B2 (en) | 1994-08-24 |
Family
ID=14227099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9871188A Expired - Lifetime JPH0666392B2 (en) | 1988-04-20 | 1988-04-20 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0666392B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5329157A (en) * | 1992-07-17 | 1994-07-12 | Lsi Logic Corporation | Semiconductor packaging technique yielding increased inner lead count for a given die-receiving area |
US5532934A (en) * | 1992-07-17 | 1996-07-02 | Lsi Logic Corporation | Floorplanning technique using multi-partitioning based on a partition cost factor for non-square shaped partitions |
US5561086A (en) * | 1993-06-18 | 1996-10-01 | Lsi Logic Corporation | Techniques for mounting semiconductor dies in die-receiving areas having support structure having notches |
US5654582A (en) * | 1994-05-06 | 1997-08-05 | Texas Instruments Incorporated | Circuit wafer and TEG test pad electrode |
JP2012129473A (en) * | 2010-12-17 | 2012-07-05 | Sekisui Chem Co Ltd | Dicing-die bonding tape |
-
1988
- 1988-04-20 JP JP9871188A patent/JPH0666392B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5329157A (en) * | 1992-07-17 | 1994-07-12 | Lsi Logic Corporation | Semiconductor packaging technique yielding increased inner lead count for a given die-receiving area |
US5340772A (en) * | 1992-07-17 | 1994-08-23 | Lsi Logic Corporation | Method of increasing the layout efficiency of dies on a wafer and increasing the ratio of I/O area to active area per die |
US5341024A (en) * | 1992-07-17 | 1994-08-23 | Lsi Logic Corporation | Method of increasing the layout efficiency of dies on a wafer, and increasing the ratio of I/O area to active area per die |
US5532934A (en) * | 1992-07-17 | 1996-07-02 | Lsi Logic Corporation | Floorplanning technique using multi-partitioning based on a partition cost factor for non-square shaped partitions |
US5561086A (en) * | 1993-06-18 | 1996-10-01 | Lsi Logic Corporation | Techniques for mounting semiconductor dies in die-receiving areas having support structure having notches |
US5654582A (en) * | 1994-05-06 | 1997-08-05 | Texas Instruments Incorporated | Circuit wafer and TEG test pad electrode |
JP2012129473A (en) * | 2010-12-17 | 2012-07-05 | Sekisui Chem Co Ltd | Dicing-die bonding tape |
Also Published As
Publication number | Publication date |
---|---|
JPH0666392B2 (en) | 1994-08-24 |
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