JPH0662550U - Composite semiconductor device - Google Patents

Abstract

(57) [Summary] [Purpose] To prevent the inclusion of air bubbles in the bent part of the external lead-out terminal and to improve the withstand voltage. [Structure] The through hole 15 is formed in the inclined portion 14 of the external lead-out terminal 13.
By providing the above, bubbles generated during the filling of the sealing resin can escape to the upper part of the insulating case through the through hole 15. For this reason, after the sealing resin is cured, air bubbles do not remain inside the sealing resin to form voids, and an improvement in withstand voltage can be achieved.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a composite semiconductor device in which a semiconductor chip is enclosed in an insulating case, and more particularly to the structure of its external lead terminal.

[0002]

[Prior art]

 A schematic structure of this type of composite semiconductor device is shown in FIGS. 3 is a plan view of the composite semiconductor device with the case removed, and FIG. 4 is a side view thereof. In these figures, an insulating substrate 3 made of ceramic or the like is placed and fixed on a heat dissipation plate 1 with a metallized layer 2 interposed therebetween. External lead-out terminals 5 and 6 are fixed on the insulating substrate 3 via a metallized layer 4. A heat spreader 7 is fixed on the external lead-out terminals 5 and 6, and a semiconductor chip 8 is fixed on the heat spreader 7. Internal terminals 9 bent into a predetermined shape are fixed to the electrode surface provided on the upper surface of the semiconductor chip 8. One end of the external lead-out terminal 5 is connected to one end of one internal terminal 9, one end of another external lead-out terminal 10 is connected to one end of the other internal terminal 9, and the other end is led out upward. There is.

An insulating case 11 having openings at both ends is fixed to the heat dissipation plate 1 so as to surround each of these members, and a sealing resin 12 is filled inside the insulating case 11 and cured. The composite semiconductor device having the above structure is used by attaching the heat sink 1 to an external member (not shown) through the through hole 1a. However, the structure of the conventional composite semiconductor device has the following problems.

[0004]

[Problems to be solved by the device]

 That is, in the conventional composite semiconductor device, when the inside of the insulating case 11 is filled with resin, it is filled in the bent portions of the horizontal portions 5a, 6a and the vertical portions 5b, 6b of the external lead terminals 5, 6. The air bubbles 16 generated in the encapsulation resin are held. The bubbles 16 cannot easily escape upward because the gap between the outer surfaces of the external lead-out terminals 5 and 6 and the inner surface of the insulating case 11 is small, and the sealing resin 12 is trapped inside. It will harden. In particular, there is a problem to be solved that the withstand voltage is lowered when the bubbles 16 are present between the metallization layer 4 at the upper end portion of the insulating substrate 3 and the heat dissipation plate 1.

[0005]

[The purpose of the device]

 The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a composite semiconductor device having an improved withstand voltage without entrapping air bubbles in the bent portion of the external lead-out terminal. It is intended.

[0006]

[Means for solving problems]

 In the composite semiconductor device of the present invention, an insulating substrate is laminated on a heat dissipation plate, a horizontal portion is soldered to the upper surface of the insulating substrate, and a vertical portion is formed by bending the horizontal portion at a right angle. In a composite semiconductor device comprising an external lead terminal having an external lead terminal, the insulating substrate and the lower portion of the external lead terminal are sealed in an insulating case by filling with a sealing resin. It is characterized in that an inclined portion is provided between them and a through hole is formed in the inclined portion.

[0007]

[Action]

 In the composite semiconductor device of the present invention, by providing the through hole in the inclined portion of the external lead-out terminal, bubbles generated during the filling of the sealing resin can escape to the upper part of the insulating case through the through hole. For this reason, after the sealing resin is cured, air bubbles do not remain inside the sealing resin to form voids, and the dielectric strength can be improved.

[0008]

【Example】

 Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is an enlarged view of an external lead terminal portion of a composite semiconductor device showing an embodiment of the present invention. FIG. 2 is an enlarged view seen from the direction of arrow A in FIG. In these figures, an inclined portion 14 is formed between the horizontal portion 13a of the external lead-out terminal 13 and the vertical portion 13b bent from the horizontal portion 13 at a substantially right angle. The angle α formed between the outer surface of the inclined portion 14 and the bottom surface of the horizontal portion 13a is in the range of α = 30 to 80 degrees in this embodiment. Further, a through hole 15 is formed in the inclined portion 14 described above. Although the number of the through holes 15 is one in the figure, a plurality of through holes 15 can be provided if necessary. Further, the other constituent members are the same as the conventional ones, and therefore detailed description thereof is omitted.

When a composite semiconductor device is assembled by using the external lead-out terminal 13 configured as described above as in the conventional case, the bubbles generated during the filling of the encapsulating resin form the through holes 15 formed in the inclined portion 14. Escape over the insulation case through. Therefore, after the sealing resin is cured, no air bubbles remain inside the cured resin and no void is formed. As a result, the withstand voltage can be improved.

[0010]

[Effect of device]

 As described above, in the composite semiconductor device of the present invention, the inclined portion is provided between the horizontal portion and the vertical portion of the external lead-out terminal, and the through hole is provided in this inclined portion. Bubbles generated during the filling of the sealing resin can escape above the insulating case. Therefore, no bubbles remain after the sealing resin is cured, and the withstand voltage is improved, and the reliability of the device itself can be improved.

[Brief description of drawings]

FIG. 1 is an enlarged view showing an external lead-out terminal portion of a composite semiconductor device according to an embodiment of the present invention.

FIG. 2 is an enlarged view of the external lead-out terminal seen from the direction of arrow A in FIG.

FIG. 3 is a plan view of a conventional composite semiconductor device with an insulating case removed.

FIG. 4 is a side view of the same.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heat sink 2,4 Metallization layer 3 Insulating substrate 5,6,10,13 External lead-out terminal 7 Heat spreader 8 Semiconductor chip 9 Internal terminal 11 Insulation case 12 Resin sealing 13a Horizontal part 13b Vertical part 14 Slope part 15 Through hole 16 Bubble

Claims (1)

[Scope of utility model registration request] 1. An external lead-out having an insulating substrate laminated on a heat dissipation plate, a horizontal portion solder-bonded to the upper surface of the insulating substrate, and a vertical portion that is bent up from the horizontal portion at a substantially right angle to stand up. In a composite semiconductor device including a terminal, wherein the insulating substrate and the lower portion of the external lead terminal are sealed in an insulating case by filling with a sealing resin, an inclined portion is provided between the horizontal portion and the vertical portion of the external lead terminal. A composite semiconductor device, wherein the compound semiconductor device is provided, and a through hole is formed in the inclined portion.