JPH0661048A - Multilayer magnetoresistance effect film and magnetic head - Google Patents

Abstract

PURPOSE:To obtain a high change rate of magnetoresistance by using an Ni-Fe based alloy having a face-centered cubic lattice structure as the magnetic layer to orient the (100) face of a magnetic layer crystal in parallel with the substrate. CONSTITUTION:In a magnetoresistance effect element using a multilayer that is a laminate of nonmagnetic layers 12, an Ni-Fe based allay having a face- centered cubic lattice structure is used as a magnetic layer 11 to orient the crystal (100) face of the magnetic layer 11 in parallel with the substrate. The relation between X-ray diffraction strength I200 by the crystal (200) face of the magnetic layer 11 and X-ray diffraction strength I111 by the crystal (111) face is designed so as to be I200/(I111+I200)>=0.4. The film thickness per layer of Ni-Fe based alloy should be 2.5-5mm. This process can provide a low saturation magnetic field and a high magnetoresistance effect simultaneously, which are suitable for magnetoresistance effect element, magnetic field sensor, magnetic head, etc., and this magnetic head is used to provide a high performance magnetic recording reproducer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer magnetoresistive film having a high magnetoresistive effect, a magnetoresistive element using the same, a magnetic head and a magnetic recording / reproducing apparatus.

[0002]

2. Description of the Related Art As the magnetic recording density increases, a material having a high magnetoresistive effect is required as a magnetoresistive effect material used for a reproducing magnetic head. At present, the magnetoresistance change rate of permalloy used is about 3%, and it is necessary for the new material to have a magnetoresistance change rate higher than this.

Recently, Baibich et al., Physical Review Letters, Vol. 61,
No. 21, pp. 2472-2475, `` (001) Fe / (001) Cr
Giant Magnetoresis Effect of Magnetic Superlattice "
tance of (001) Fe / (001) Cr Magnetic Superlattices)
Magnetic film with a multilayer structure (Fe / Cr multilayer film)
, A magnetoresistance change rate of about 50% (at 4.2 K) is observed.

[0004]

However, the above Fe / C
In order to cause a sufficient magnetoresistance change in the r multilayer film,
A magnetic field as high as 800 kA / m is required, and there is a problem that it cannot be used for a magnetoresistive element or a magnetic head that needs to operate at a low magnetic field.

With the increasing density of magnetic recording, a material exhibiting a high magnetoresistive effect is required as a magnetoresistive effect material used for a reproducing magnetic head. Currently, the magnetic resistance change rate of permalloy used is 3%, and it is necessary for the new material to have a magnetic resistance change rate higher than this.
Recently, a multilayer film exhibiting the above-described high magnetoresistive effect has been reported, but a problem that a high magnetoresistance change rate cannot be obtained even when a Ni—Fe alloy having excellent soft magnetic characteristics is used for the multilayer film. was there.

An object of the present invention is to provide a method for solving the problem of the magnetoresistive effect element using the above-mentioned multilayer film.

[0007]

Means for Solving the Problems The inventors of the present invention have conducted extensive studies on a magnetoresistive effect element using a multilayer magnetic film in which magnetic layers having various materials and film thicknesses and non-magnetic layers are laminated. Ni having a face-centered cubic lattice structure as a magnetic layer
The inventors have found that the rate of change in magnetoresistance is increased by using a —Fe-based alloy and orienting it so that the (100) plane of the crystal of the magnetic layer is parallel to the substrate, and completed the present invention.

That is, in a magnetoresistive element using a multilayer film in which nonmagnetic layers are laminated, a Ni--Fe alloy having a face-centered cubic lattice structure is used as the magnetic layer, and the (100) plane of the crystal of the magnetic layer is used. A high magnetoresistance change rate can be obtained by orienting so as to be parallel to the substrate. Also,
The (100) plane orientation of the crystal of the magnetic layer does not have to be perfect, and the X-ray diffraction intensity I ₂₀₀ of the (200) plane of the crystal of the magnetic layer and the X-ray diffraction intensity I 111 of the crystal of the (111) plane of the magnetic layer are I _111. The intensity relationship of I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ) ≧ 0.
If it is 4, a high magnetoresistive effect can be obtained.

Further, by setting the film thickness of one layer of the Ni--Fe alloy layer to 2.5 to 5 nm, a low saturation magnetic field and a high magnetoresistive effect can be obtained at the same time.

The multilayer magnetoresistive effect film is suitable for a magnetoresistive effect element, a magnetic field sensor, a magnetic head and the like. Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.

[0011]

As described above, in the magnetoresistive element using the multilayer film in which the non-magnetic layers are laminated, the Ni--Fe alloy having the face-centered cubic lattice structure is used as the magnetic layer, and the crystal of the magnetic layer ( By orienting so that the (100) plane is parallel to the substrate, a higher magnetoresistance change rate can be obtained than that of the multilayer film in which the (111) plane is oriented parallel to the substrate.
Further, the (100) plane orientation of the crystal of the magnetic layer does not have to be perfect, and the X-ray diffraction intensity I ₂₀₀ of the (200) plane of the crystal of the magnetic layer and the X-ray diffraction intensity of the (111) plane of the crystal of the magnetic layer are The strength relationship of I ₁₁₁ is I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ).
If ≧ 0.4, a high magnetoresistive effect can be obtained. In addition, the film thickness of one layer of the Ni-Fe alloy layer is 2.5.
By setting the thickness to 5 nm, a low saturation magnetic field and a high magnetoresistive effect can be obtained at the same time. The multilayer magnetoresistive effect film is suitable for a magnetoresistive effect element, a magnetic field sensor, a magnetic head, and the like. Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.

[0012]

EXAMPLES An example of the present invention will be described below in more detail with reference to the drawings. [Example 1] An ion beam sputtering method was used for manufacturing the multilayer film. The ultimate vacuum is 3/10 ⁵ Pa, and the Ar pressure during sputtering is 2/10 ² Pa. The film formation rate is 0.1 to 0.2 nm / s. Si (1
00) A single crystal was used. The cross-sectional structure of the formed multilayer film is shown in FIG. In this embodiment, as the magnetic layer 11 in this figure,
A Ni-20 at% Fe alloy having a film thickness of 1.0 nm was used.
Moreover, Cu was used for the non-magnetic layer. The number of layers is 20 cycles. The buffer layer 13 is Fe with a film thickness of 5 nm. Fe was oriented so that the (110) plane of the crystal was parallel to the substrate surface.

FIG. 3 shows the relationship between the Cu film thickness and the magnetoresistance change rate.
Shown in. As shown in the figure, the magnetoresistance change rate oscillates depending on the Cu film thickness. FIG. 4 shows the X-ray diffraction profiles of the sample having a high rate of change in magnetic resistance and the sample having a low rate of change in magnetic resistance due to this vibration. As shown in FIGS. 3 and 4, Ni-Fe
The multilayer film in which the (111) plane of the crystal of the system alloy and the Cu layer is oriented parallel to the substrate has a low magnetoresistance change rate. Also,
The (200) diffraction intensity of the crystals of the Ni—Fe alloy and the Cu layer is strong, and the multilayer film in which the (100) plane is oriented parallel to the substrate has a high magnetoresistance change rate.

From this, the magnetoresistance change rate differs depending on the orientation, and the (100) plane of the crystal of the Ni—Fe alloy and the Cu layer is oriented parallel to the substrate to increase the magnetoresistance change rate. It became clear to do.

In Co / Cu multilayer films, Egelhoff, J
r. et al., 1992 Digests of th
e Intermag Conference, 1992) FB-02 page `` Cu
Antiferromagnetic coupling in Fe / Cu / Fe and Co / Cu / Co multilayers formed on (111) and Cu (100) "(Antiferromagnetic Co
upling in Fe / Cu / Fe and Co / Cu / Co Multilayers on Cu
(111) and Cu (100)) such as Co / C on the Cu (100) plane.
It has been clarified that a high magnetoresistance change rate can be obtained by forming a u multilayer film. However, the Co layer is not a soft magnetic material and is not preferable for use in a magnetic head or the like.

Furthermore, (20) of the crystal of the multilayer film of this embodiment is used.
0) and X-ray diffraction intensity I ₂₀₀ by surface investigated the relationship between the intensity of X-ray diffraction intensity I ₁₁₁ by (111) plane of the crystal. The results are shown in Fig. 1. As shown in this figure, I ₂₀₀ / (I
_When the value of ( ₁₁₁ + I ₂₀₀ ) is 0.4 or more, the magnetoresistance change rate is 5% or more. Therefore, I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ )
The value of is preferably 0.4 or more. Also, I ₂₀₀ / (I ₁₁₁ +
When the value of (I ₂₀₀ ) is 0.8 or more, a magnetoresistance change rate of 10% or more can be obtained.

Further, N other than Ni-20 at% Fe alloy is used.
Also in the multilayer film using the i-Fe-based alloy as the magnetic layer, the magnetoresistance change rate higher than that of the multilayer film having the (111) plane orientation was obtained by orienting the (100) plane in the same manner as above. Further, when the value of I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ) was 0.4 or more, a relatively high magnetoresistance change rate was obtained. More preferably, the value of I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ) is 0.8 or more. Further, the Fe concentration of the Ni—Fe alloy is preferably 10 to 30 at% in order to bring the values of the crystal magnetic anisotropy and the thin film magnetostriction to near zero.

In this embodiment, the nonmagnetic layer is made of Cu.
Although the case of using the above, the multilayer film showing a high magnetoresistance change rate can be obtained by orienting the (100) plane of the magnetic layer even if another material is used for the non-magnetic layer.

Further, in this embodiment, F is used as the buffer layer.
Although e was used, any material may be used as long as the Ni—Fe layer can be (100) oriented.

When the magnetoresistive effect curve is symmetrical, if a mechanism for applying a bias magnetic field in the magnetic field detecting direction of the multilayer magnetoresistive film is provided in advance,
It is possible to obtain a magnetoresistive effect element capable of judging the positive / negative of the magnetic field.

When Barkhausen noise is generated in the magnetoresistive effect curve, a mechanism for applying a bias magnetic field in a direction perpendicular to the magnetic field detection direction of the multilayer magnetoresistive effect film is effective in suppressing Barkhausen noise. There is.
In a multilayer film, it is preferable to apply a bias magnetic field uniformly to each magnetic layer, and therefore it is preferable to use a permanent magnet layer for bias magnetic field application.

Example 2 A multilayer film was formed by the same method as in Example 1. In this example, Cu having a film thickness of 1.0 nm was used as the non-magnetic layer 12 in FIG. A Ni-20 at% Fe alloy was used for the magnetic layer 11. Fe having a film thickness of 5 nm was used for the buffer layer 13, and Si (100) single crystal was used for the substrate 14.

When the X-ray diffraction profile of the obtained sample was measured, the Ni--Fe magnetic layer was (100).
It was oriented.

FIG. 5 shows changes in the magnetoresistance change rate 41 and the saturation magnetic field 42 depending on the Ni—Fe film thickness. As shown in this figure, by setting the Ni—Fe film thickness to 0.8 to 5 nm, a magnetoresistance change rate of 10% or more can be obtained. Also, N
By setting the i-Fe film thickness to 2.5 nm or more, 64
A saturation magnetic field of kA / m (800 Oe) or less can be obtained. Therefore, the magnetic resistance change rate of 10% or more and 64 kA / m
To obtain a saturation magnetic field of (800 Oe) or less at the same time,
It is preferable that the Ni-Fe film thickness is 2.5 to 5 nm.

The Fe concentration of the Ni--Fe alloy is set to 1 in order to bring the values of crystal magnetic anisotropy and thin film magnetostriction to near zero.
0 to 30 at% is preferable.

In this embodiment, the nonmagnetic layer is made of Cu.
However, the same result as in this example can be obtained by orienting the magnetic layer in the (100) plane even if another material is used for the non-magnetic layer.

Further, in this embodiment, F is used as the buffer layer.
Although e was used, any material may be used as long as the Ni—Fe layer can be (100) oriented.

Example 3 A magnetoresistive effect element using a (111) oriented multilayer film and a (100) oriented multilayer film was formed. The composition and structure of the multilayer magnetoresistive effect film are the same as in Example 1. FIG. 6 shows the structure of the magnetoresistive effect element. The magnetoresistive effect element has a structure in which a multilayer magnetoresistive effect film 23 and an electrode 24 are sandwiched between shield layers 21 and 22. A magnetic field was applied to the magnetoresistive effect element, and the change in the electrical resistivity of the magnetoresistive effect element was measured.
1) Magnetoresistive element using an oriented multilayered magnetoresistive film Almost showed no magnetoresistance change rate. Also,
The magnetoresistive element using the (100) -oriented multilayer magnetoresistive film showed a high magnetoresistive change rate.

Example 4 A magnetic head was manufactured using the magnetoresistive effect element described in Example 3. The structure of the magnetic head is shown below. FIG. 7 is a perspective view when a part of the recording / reproducing separated type head is cut. The portion of the multi-layered magnetoresistive film 31 sandwiched by the shield layers 32 and 33 serves as a reproducing head, and the lower magnetic pole 35 and the upper magnetic pole 36 sandwiching the coil 34 serve as a recording head. The multilayer magnetoresistive effect film 31 is composed of the multilayer film described in the first embodiment. Ni-Fe
The magnetic layer has a thickness of 4.0 nm, and the Cu layer has a thickness of 1.0 nm.
And Further, a conductor layer 38 made of Ta was formed on the multilayer film in order to apply a bias magnetic field in the magnetic field detection direction. Further, for the electrode 39, a material having a multilayer structure of Cr / Cu / Cr was used.

The manufacturing method of this head will be described below.

A sintered body containing Al ₂ O ₃ .TiC as a main component was used as the substrate 37 for the slider. A Ni—Fe alloy formed by a sputtering method was used for the shield layer and the recording magnetic pole. The thickness of each magnetic film was as follows. The upper and lower shield layers 32 and 33 are 1.0 μm, the lower magnetic pole 35 and the upper 3
6 is 3.0 μm, and the total thickness of the multilayer magnetoresistive effect film is about 3
It is 8 nm. Al ₂ O ₃ formed by sputtering was used as the gap material between the layers. The film thickness of the gap layer was 0.2 μm between the shield layer and the magnetoresistive effect element and 0.4 μm between the recording magnetic poles. Further, the distance between the reproducing head and the recording head is set to about 4 μm, and this gap is also made of Al ₂
Formed with O ₃ . Cu having a film thickness of 3 μm was used for the coil 34.

When recording / reproducing was performed with the magnetic head having the above-described structure, a high reproducing output was obtained. It is considered that this is because the magnetic head of the present invention uses a multilayer film having a high magnetoresistive effect and an appropriate bias magnetic field is applied.

Although the shunt bias method is used as the bias method in the above embodiment, the same applies when another bias method such as the current bias method, the permanent magnet method, the soft bias method or the mutual bias method is used. The effect is obtained.

By the way, in the case where the magnetic head has recording and reproducing capabilities at the same time, if a recording element is formed in a portion close to the substrate, a coil, a magnetic pole, etc. are formed above the recording element. A large step is generated. If a multi-layered magnetoresistive film is formed on top of this, the multi-layered structure is disturbed due to the effect of steps, which is not preferable. On the other hand, as shown in FIG. 7, when the magnetoresistive effect element for reproduction is formed in the portion close to the substrate, the magnetoresistive effect element is formed in the portion having relatively few steps, so that the disorder of the multilayer structure hardly occurs. . This is a phenomenon that is essentially different from the magnetoresistive effect element using a permalloy single layer film.

From the above points of view, when the magnetic head has recording and reproducing capabilities at the same time, it is preferable to form a magnetoresistive effect element for reproduction in a portion near the substrate.

From the same point of view, if the recording element and the reproducing magnetoresistive effect element are formed in other places on the same substrate, the magnetoresistive effect element can be formed in a portion having a small step.

Further, the magnetoresistive effect element of the present invention can be used in a magnetic field detector other than the magnetic head.

Further, by using the above magnetic head in a magnetic recording / reproducing apparatus, a high performance magnetic recording / reproducing apparatus can be obtained.

[0039]

As described above, in the magnetoresistive effect element using the multilayer film in which the non-magnetic layers are laminated, the Ni-Fe alloy having the face-centered cubic lattice structure is used as the magnetic layer, and the crystal of the magnetic layer is formed. A high magnetoresistance change rate can be obtained by orienting so that the (100) plane of is parallel to the substrate. Further, the multilayer magnetoresistive effect film is suitable for a magnetoresistive effect element, a magnetic field sensor, a magnetic head and the like. Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.

[Brief description of drawings]

FIG. 1 is a graph showing a relationship between an X-ray diffraction intensity ratio and a magnetoresistance change rate of a multilayer magnetoresistive effect film of the present invention.

FIG. 2 is a sectional view showing a structure of a multilayer magnetoresistive effect film of the present invention.

FIG. 3 is a graph showing vibration of the magnetoresistance change rate depending on the Cu film thickness in the multilayer magnetoresistive effect film of the present invention.

FIG. 4 is a graph showing an X-ray diffraction profile of the multilayer magnetoresistive effect film of the present invention.

FIG. 5 is the Ni- of the (100) -oriented multilayer film of the present invention.
6 is a graph showing the relationship between the Fe film thickness, the magnetoresistance change rate, and the saturation magnetic field.

FIG. 6 is a perspective view showing the structure of a magnetoresistive effect element using the multilayer magnetoresistive effect film of the present invention.

FIG. 7 is a perspective view showing the structure of the magnetic head of the present invention.

[Explanation of symbols]

11 ... Magnetic layer, 12 ... Nonmagnetic layer, 13 ... Buffer layer, 1
4 ... Substrate 21, 22 ... Shield layer, 23 ... Multilayer magnetoresistive effect film, 24 ... Electrode, 31 ... Multilayer magnetoresistive effect film, 3
2, 33 ... Shield layer, 34 ... Coil, 35 ... Lower magnetic pole, 36 ... Upper magnetic pole, 37 ... Base, 38 ... Conductor layer, 39
... electrode, 41 ... rate of change in magnetic resistance, 42 ... saturation magnetic field.

Claims (14)

[Claims] 1. A multilayer magnetoresistive effect film using a multilayer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer is a Ni--Fe based alloy having a face-centered cubic lattice structure, and the crystal of the magnetic layer. A multi-layered magnetoresistive effect film having a (100) plane oriented in parallel with the substrate. 2. The multilayer magnetoresistive effect film according to claim 1, wherein the film thickness of each of said Ni—Fe alloy layers is 2.5 to 5 nm. 3. A multilayer magnetoresistive effect film using a multilayer film in which a magnetic layer and a nonmagnetic layer are laminated, wherein the magnetic layer is a Ni--Fe alloy having a face-centered cubic lattice structure, and the crystal of the magnetic layer. The relationship between the X-ray diffraction intensity I ₂₀₀ due to the (200) plane and the intensity of the X-ray diffraction intensity I ₁₁₁ due to the (111) plane of the crystal is I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ) ≧ 0.4. And a multilayer magnetoresistive effect film. 4. The multilayer magnetoresistive effect film according to claim 3, wherein the film thickness of each of said Ni—Fe alloy layers is 2.5 to 5 nm. 5. A magnetoresistive element having a multilayer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer is a Ni--Fe based alloy having a face-centered cubic lattice structure, and crystals of the magnetic layer ( A magnetoresistive effect element comprising a multi-layered magnetoresistive effect film at least a part of which the (100) plane is oriented parallel to the substrate. 6. A magnetoresistive element having a multilayer film comprising a magnetic layer and a non-magnetic layer laminated, wherein the magnetic layer is a Ni--Fe alloy having a face-centered cubic lattice structure, and crystals of the magnetic layer ( A multilayer magnetoresistive film in which the relationship between the X-ray diffraction intensity I _{200 due} to the ( ₂₀₀ ) plane and the X-ray diffraction intensity I ₁₁₁ due to the (111) plane of the crystal is I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ) ≧ 0.4. A magnetoresistive effect element characterized by using at least a part of. 7. A magnetic head using a magnetoresistive effect element having a multi-layer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer is a Ni--Fe alloy having a face-centered cubic lattice structure, and A magnetic head comprising at least a part of a magnetoresistive effect element using at least a part of a multilayer magnetoresistive effect film in which a (100) plane of a layer crystal is oriented parallel to a substrate. . 8. A magnetic head using a magnetoresistive effect element having a multi-layer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer is a Ni--Fe alloy having a face-centered cubic lattice structure, and X-ray diffraction intensity I ₂₀₀ of the (200) plane of the layer crystal and X-ray diffraction intensity I of the (111) plane of the crystal
The relationship of the strength of ₁₁₁ is I ₂₀₀ / (I ₁₁₁ + I ₂₀₀ ) ≧ 0.4
2. A magnetic head characterized in that a magnetoresistive effect element using at least a part of the multilayer magnetoresistive effect film is used at least a part. 9. A magnetic head using a magnetoresistive effect element having a multilayer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer is a Ni--Fe based alloy having a face-centered cubic lattice structure, and A magnetoresistive effect element using at least a part of a multi-layered magnetoresistive effect film, characterized in that the (100) plane of the layer crystal is oriented parallel to the substrate, and an induction type magnetic head are combined. A composite type magnetic head. 10. A magnetic head using a magnetoresistive effect element having a multi-layer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer is a Ni--Fe alloy having a face-centered cubic lattice structure, and relationship of the intensity of X-ray diffraction intensity I ₁₁₁ and X-ray diffraction intensity I ₂₀₀ by (200) plane of the crystal layer by (111) plane of the _{crystal, I 200 / (I 111 +} I 200) ≧ 0.
4. A composite magnetic head comprising a combination of a magnetoresistive effect element using the multilayer magnetoresistive effect film of 4 and an inductive magnetic head. 11. A device provided with a magnetic head using a magnetoresistive effect element having a multilayer film in which a magnetic layer and a nonmagnetic layer are laminated, wherein the magnetic layer has a face-centered cubic lattice structure.
A magnetoresistive effect element using at least a part of a multi-layered magnetoresistive effect film, which is an Fe-based alloy and is oriented so that the (100) plane of the crystal of the magnetic layer is parallel to the substrate. A magnetic recording / reproducing apparatus characterized by using the used magnetic head. 12. A device provided with a magnetic head using a magnetoresistive effect element having a multilayer film in which a magnetic layer and a nonmagnetic layer are laminated, wherein the magnetic layer has a face-centered cubic lattice structure.
A -Fe system alloy, the relationship of the intensity of the magnetic layer of the crystal of (200) plane by X-ray diffraction intensity I ₂₀₀ and the crystal (111) plane X-ray diffraction intensity I ₁₁₁ by the, I ₂₀₀ / (I ₁₁₁ +
A magnetic recording / reproducing apparatus characterized by using a magnetic head having a magnetoresistive effect element having at least a part of a multi-layered magnetoresistive film satisfying I ₂₀₀ ) ≧ 0.4. 13. A device provided with a magnetic head using a magnetoresistive effect element having a multilayer film in which a magnetic layer and a nonmagnetic layer are laminated, wherein the magnetic layer has a face-centered cubic lattice structure.
A magnetoresistive effect element using a multi-layered magnetoresistive effect film, which is an -Fe alloy and is oriented so that the (100) plane of the crystal of the magnetic layer is parallel to the substrate. A magnetic recording / reproducing apparatus characterized by using a composite type magnetic head which is a combination of a magnetic head and an induction type magnetic head. 14. A device provided with a magnetic head using a magnetoresistive effect element having a multilayer film in which a magnetic layer and a non-magnetic layer are laminated, wherein the magnetic layer has a face-centered cubic lattice structure.
A -Fe system alloy, the relationship of the intensity of the magnetic layer of the crystal of (200) plane by X-ray diffraction intensity I ₂₀₀ and the crystal (111) plane X-ray diffraction intensity I ₁₁₁ by the, I ₂₀₀ / (I ₁₁₁ +
A magnetic recording / reproducing apparatus characterized by using a composite magnetic head in which a magnetoresistive effect element using a multi-layered magnetoresistive film satisfying I ₂₀₀ ) ≧ 0.4 is used at least in part and an induction type magnetic head.