JPH06310329A - Multilayer magnetoresistance effect film and magnetic head - Google Patents

Abstract

PURPOSE:To restrain the switching interaction between two layers of magnetic layers by a method wherein a buffer layer composed of a nonmagnetic metal provided with a dense hexagonal structure is formed between a multilayer film and a substrate. CONSTITUTION:In a multilayer magnetoresistance effect film, two or more layers of magnetic layers 13, 15 are divided by a nonmagnetic layer 14, and a multilayer film in which a switching bias magnetic field from an antiferromagnetic layer 16 is applied to at least one layer out of the magnetic layers and in which the switching bias magnetic field from the antiferromagnetic layer is not applied directly to at least one layer out of the magnetic layers is used. Then, a buffer layer 14 composed of a nonmagnetic metal provided with a dense hexagonal structure is formed between the multilayer film and a substrate 11. As the nonmagnetic metal provided with the dense hexagonal structure, Ti, Hf, Zn, Zr or an alloy whose main component is Ti, Hf, Zn or Zr is used. As the magnetic layers, an Ni-Fe-Co-based alloy is used. Thereby, it is possible to obtain the multilayer film whose magnetoresistance change rate is high at a low magnetic field, and a high-performance magnetoresistance effect element or the like can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer magnetoresistive film having a high magnetoresistive effect, a magnetoresistive element using the same, a magnetic head and a magnetic recording / reproducing apparatus.

[0002]

2. Description of the Related Art As the magnetic recording density increases, a material having a high magnetoresistive effect is required as a magnetoresistive effect material used for a reproducing magnetic head. At present, the magnetoresistance change rate of permalloy used is about 3%, and it is necessary for the new material to have a magnetoresistance change rate higher than this.

Recently, Baibich et al., Physical Review Letters, Vol. 61,
No. 21, pp. 2472-2475, `` (001) Fe / (001) Cr
Giant Magnetoresis Effect of Magnetic Superlattice "
tance of (001) Fe / (001) Cr Magnetic Superlattices)
Magnetic film with a multilayer structure (Fe / Cr multilayer film)
, A magnetoresistance change rate of about 50% (at 4.2 K) is observed. However, in order to cause a sufficient magnetoresistance change in the Fe / Cr multilayer film, 800 k
A magnetic field as high as A / m is required, and there is a problem that it cannot be used for a magnetoresistive effect element or a magnetic head that needs to operate at a low magnetic field.

Therefore, Physical Review B by Dieny et al., Vol. 43, No. 1, 1297-1.
"Giant Magnetoresistance in Soft Ferromagne" on page 300
A method has been devised in which two magnetic layers are separated by a non-magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is applied to one magnetic layer, such as tic multilayers. In the above-mentioned multilayer film, as described in European Patent, 0 490 608 A2, T layer is formed on the substrate in order to adjust the structure, crystal grain size, etc. of the multilayer film.
A buffer layer made of a, Ru and CrV is formed.

[0005]

In the multilayer film as described above, it is necessary to magnetically separate the two magnetic layers with a relatively thin nonmagnetic metal layer. For this purpose, the crystal orientation of the multilayer film is very important.

An object of the present invention is to provide a method for solving the problem of the magnetoresistive effect element using the above-mentioned multilayer film.

[0007]

Means for Solving the Problems The inventors of the present invention have conducted extensive studies on a magnetoresistive effect element using a multilayer magnetic film in which magnetic layers having various materials and film thicknesses and non-magnetic layers are laminated. It was found that exchange interaction between two magnetic layers can be minimized by forming a buffer layer made of a nonmagnetic metal having a dense hexagonal structure between the multilayer film and the substrate. Has been completed.

That is, two or more magnetic layers are divided by non-magnetic layers, and the exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and at least one magnetic layer is antiferromagnetic. The exchange bias magnetic field from the magnetic layer is not directly applied. In a multilayer magnetoresistive film using a multilayer film, a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is provided between the multilayer film and the substrate. By forming it, the exchange interaction between the two magnetic layers can be minimized, and a multilayer magnetoresistive effect film exhibiting a high magnetoresistance change rate in a low magnetic field can be obtained. As the non-magnetic metal having the dense hexagonal structure, Ti, Hf, Zn, Zr or an alloy containing Ti, Hf, Zn, Zr as a main component is preferable. When the nonmagnetic metal having the dense hexagonal structure is used as the buffer layer, the multilayer film exhibits a strong (111) orientation, and therefore exchange interaction between the magnetic layers can be minimized. Further, four or more magnetic layers are divided by non-magnetic layers, and the exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers, and at least two magnetic layers are separated from the antiferromagnetic layers. When the exchange bias magnetic field of (3) is not directly applied to form a multilayer film, a higher magnetoresistance change rate can be obtained. Further, as the magnetic layer, Ni is used.
-Fe-Co alloy shows soft magnetism and Ni-Fe-
Use of a Co-based alloy is preferable because a high magnetoresistance change rate can be obtained. Moreover, in order to obtain a high magnetoresistance change rate and excellent soft magnetism, the Co concentration of the Ni—Fe—Co alloy is preferably 10 to 25 at%.

The multilayer magnetoresistive effect film is suitable for a magnetoresistive effect element, a magnetic field sensor, a magnetic head and the like. Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.

The feature of the first invention is that (1) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer, An exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive film using a multilayer film, a dense hexagonal structure is formed between the multilayer film and the substrate. A multilayer magnetoresistive effect film having a buffer layer made of a non-magnetic metal is formed.

(2) In (1), it is preferable that the nonmagnetic metal having the dense hexagonal structure is made of Ti, Hf, Zn, Zr or an alloy containing Ti, Hf, Zn, Zr as a main component.

(3) In (1), it is preferable that the nonmagnetic metal having the dense hexagonal structure is Ti, Hf, or Zr.

The feature of the second invention is that (4) two or more magnetic layers are divided by nonmagnetic layers, and the exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer. In a multilayer magnetoresistive effect film using a multilayer film in which the exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer, a T film is provided between the multilayer film and the substrate.
At least one metal selected from i, Hf, and Zr,
Alternatively, at least 1 selected from Ti, Hf, and Zr
The multi-layered magnetoresistive effect film is formed by forming a buffer layer made of a non-magnetic metal whose main component is a kind of metal, and the buffer layer is in an amorphous state.

(5) In (1) to (4), it is preferable that the magnetic layer has a face-centered cubic structure and is (111) oriented.

A feature of the third invention is that (6) four or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers, The exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers in the multilayer magnetoresistive effect film using the multilayer film which is not directly applied.

In (7) and (6), it is preferable that a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is formed between the multilayer magnetoresistive effect film and the substrate.

In (8) and (7), it is preferable that the nonmagnetic metal having the dense hexagonal structure is made of Ti, Hf, Zn, Zr or an alloy containing Ti, Hf, Zn, Zr as a main component.

(9) In (8), it is preferable that the nonmagnetic metal having the dense hexagonal structure is Ti, Hf, or Zr.

(10) In (6), at least one kind of metal selected from Ti, Hf, and Zr or Ti, Hf, and Z is provided between the multilayer magnetoresistive film and the substrate.
It is preferable that a buffer layer made of a non-magnetic metal containing at least one metal selected from r as a main component is formed, and the buffer layer is in an amorphous state.

(11) In (7) to (10), it is preferable that the magnetic layer has a face-centered cubic structure and is (111) oriented.

(12) In (1) to (11), at least a part of the magnetic layer is a Ni--Fe based alloy or N.
It is preferably an i-Fe-Co based alloy.

(13) In (12), the above Ni-F is used.
The Co concentration of the e-Co alloy is preferably 10 to 25 at%.

(14) In (1) to (11), at least a part of the magnetic layer is preferably Co or an alloy containing Co as a main component.

(15) In (1) to (14), it is preferable that at least a part of the nonmagnetic layer is Cu.

A feature of the fourth invention is that (16) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer,
In a multilayer magnetoresistive effect film using a multilayer film in which the exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer, between the multilayer film and the substrate,
A magnetoresistive effect element using at least a part of a multilayer magnetoresistive effect film in which a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is formed.

The feature of the fifth invention is that (17) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer.
In a multilayer magnetoresistive effect film using a multilayer film in which the exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer, between the multilayer film and the substrate,
A buffer layer formed of at least one metal selected from Ti, Hf, and Zr or a nonmagnetic metal containing at least one metal selected from Ti, Hf, and Zr as a main component is formed. Is a magnetoresistive effect element using at least a part of a multilayer magnetoresistive effect film in an amorphous state.

A feature of the sixth invention is that (18) four or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers.
An exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers in a magnetoresistive effect element using at least a part of a multilayer magnetoresistive effect film using a multilayer film which is not directly applied.

The feature of the seventh invention is that (19) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer,
In a multilayer magnetoresistive effect film using a multilayer film in which the exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer, between the multilayer film and the substrate,
A magnetic head using a multi-layered magnetoresistive film having a buffer layer made of a non-magnetic metal having a dense hexagonal structure at least in part.

The eighth invention is characterized in that (20) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer,
In a multilayer magnetoresistive effect film using a multilayer film in which the exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer, between the multilayer film and the substrate,
A buffer layer formed of at least one metal selected from Ti, Hf, and Zr or a nonmagnetic metal containing at least one metal selected from Ti, Hf, and Zr as a main component is formed. Is a magnetic head using at least a part of a multilayer magnetoresistive effect film in an amorphous state.

A feature of the ninth invention is that (21) four or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers,
An exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers in a magnetic head using at least a part of a multilayer magnetoresistive effect film using a multilayer film that is not directly applied.

The feature of the tenth invention is that (22) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer. An exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive film using a multilayer film, a dense hexagonal structure is formed between the multilayer film and the substrate. A composite magnetic head in which a magnetoresistive effect element using at least a part of a multi-layered magnetoresistive effect film having a buffer layer made of a non-magnetic metal and an inductive magnetic head are combined.

The eleventh invention is characterized in that (23) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer. An exchange bias magnetic field from an antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive effect film using a multilayer film, Ti, Hf, A buffer layer made of a non-magnetic metal containing at least one metal selected from Zr or at least one metal selected from Ti, Hf, and Zr as a main component is formed, and the buffer layer is amorphous. A composite magnetic head is a combination of an inductive magnetic head and a magnetoresistive effect element that uses a multi-layered magnetoresistive effect film in at least part of the state.

A twelfth aspect of the present invention is that (24) four or more magnetic layers are divided by non-magnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers. The exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A magnetoresistive effect element and an inductive magnetic head using a multilayer magnetoresistive effect film using a multilayer film. It is a composite type magnetic head that combines

A thirteenth aspect of the present invention is that (25) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer, An exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive film using a multilayer film, a dense hexagonal structure is formed between the multilayer film and the substrate. A magnetic recording / reproducing apparatus having a magnetic head using at least a part of a multilayer magnetoresistive effect film having a buffer layer made of a non-magnetic metal.

A feature of the fourteenth invention is that (26) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer, An exchange bias magnetic field from an antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive effect film using a multilayer film, Ti, Hf, A buffer layer made of a non-magnetic metal containing at least one metal selected from Zr or at least one metal selected from Ti, Hf, and Zr as a main component is formed, and the buffer layer is amorphous. A magnetic recording / reproducing apparatus equipped with a magnetic head using a multi-layered magnetoresistive effect film in at least a part thereof.

A feature of the fifteenth invention is that (27) four or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers, A magnetic recording / reproducing apparatus including a magnetic head using at least a part of a multilayer magnetoresistive film using a multilayer film in which an exchange bias magnetic field from an antiferromagnetic layer is not directly applied to at least two magnetic layers. It is in.

The sixteenth invention is characterized in that (28) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, An exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive film using a multilayer film, a dense hexagonal structure is formed between the multilayer film and the substrate. A magnetic recording / reproducing apparatus comprising a composite magnetic head in which a magnetoresistive effect element using at least a part of a multilayer magnetoresistive effect film having a buffer layer made of a non-magnetic metal and an inductive magnetic head are combined. .

The seventeenth invention is characterized in that (29) two or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer. An exchange bias magnetic field from an antiferromagnetic layer is not directly applied to at least one magnetic layer. In a multilayer magnetoresistive effect film using a multilayer film, Ti, Hf, A buffer layer made of a non-magnetic metal containing at least one metal selected from Zr or at least one metal selected from Ti, Hf, and Zr as a main component is formed, and the buffer layer is amorphous. A magnetic recording / reproducing apparatus comprising a composite type magnetic head in which a magnetoresistive effect element using a multi-layered magnetoresistive effect film in a state of at least a part and an induction type magnetic head are combined.

A feature of the eighteenth invention is that (30) four or more magnetic layers are divided by nonmagnetic layers, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers. The exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A magnetoresistive effect element and an inductive magnetic head using a multilayer magnetoresistive effect film using a multilayer film. A magnetic recording / reproducing apparatus having a composite magnetic head in which the above are combined.

[0040]

As described above, by forming a buffer layer made of a nonmagnetic metal having a dense hexagonal structure between the multilayer film and the substrate, a multilayer magnetoresistive effect exhibiting a high magnetoresistive change rate in a low magnetic field is formed. A membrane can be obtained. As the non-magnetic metal having the dense hexagonal structure, Ti, Hf, Zn,
Zr or an alloy containing Ti, Hf, Zn or Zr as a main component is preferable. When the non-magnetic metal having the dense hexagonal structure is used as the buffer layer, the multilayer film is strong (111).
It exhibits an orientation so that exchange interactions between the magnetic layers can be minimized. Further, if the number of magnetic layers is four or more, a higher magnetoresistance change rate can be obtained. Further, as the magnetic layer, a Ni—Fe—Co based alloy exhibits soft magnetism, and the use of a Ni—Fe—Co based alloy is preferable because a high magnetoresistance change rate can be obtained. further,
The multilayer magnetoresistive effect film is suitable for a magnetoresistive effect element, a magnetic field sensor, a magnetic head, and the like. Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.

[0041]

EXAMPLES An example of the present invention will be described below in more detail with reference to the drawings.

[Example 1] Ion beads were used to prepare a multilayer film.
The sputtering method was used. Ultimate vacuum is 3/10
⁵ Pa, Ar pressure during sputtering is 0.02 Pa. The film formation rate is 0.1 to 0.2 nm / s. The cross-sectional structure of the formed multilayer film is shown in FIG. Board 1
1 was a Si (100) single crystal. Further, as the buffer layer 12, Ti, Zr, Hf, Cr having a thickness of 5 nm,
Nb, Ta, Cu, Ag and Au were used. A sample without the buffer layer 12 was also formed. Magnetic layers 13 and 15
For this, a Ni-20 at% Fe alloy having a thickness of 3 nm was used. Cu having a thickness of 2 nm was used for the nonmagnetic layer 14.
The antiferromagnetic layer 16 has a thickness of 5 nm of Fe-40a.
A t% Mn alloy was used. The protective layer 17 has a thickness of 5
nm Ti, Zr, Hf, Cr, Nb, Ta, Cu, A
g, Au was used.

FIG. 2 shows a magnetization curve of a multilayer film which does not use a buffer layer. It should be noted that the protective layer 17 of this multi-layered film contains N
b was used. As shown in the figure, the magnetization curve is equivalent to that of a simple single layer film, and the two magnetic layers show similar magnetization processes to an external magnetic field.

FIG. 3 shows a magnetization curve of a multilayer film using Cu, Ag, and Au having a face-centered cubic structure as the buffer layer 12. The buffer layer 1 is used as the protective layer 17 of these multilayer films.
The same material as 2 was used. As in FIG. 3, as in the multilayer films not using the buffer layer, in these multilayer films, the two magnetic layers exhibit the same magnetization process with respect to the external magnetic field.

FIG. 4 shows a magnetization curve of a multilayer film using Cr, Nb, and Ta having a body-centered cubic structure as the buffer layer 12. The buffer layer 1 is used as the protective layer 17 of these multilayer films.
The same material as 2 was used. As shown in FIG. 4, the magnetization curves are slightly separated. Further, in the multilayer film using Nb and Ta as the buffer layer, the antiferromagnetic layer 16 is formed on the single magnetic layer 15.
The exchange bias magnetic field from is applied and the magnetization curve is shifted in the positive applied magnetic field direction.

FIG. 5 shows a magnetization curve of a multilayer film using Hf, Zr, and Ti having a close-packed hexagonal structure as the buffer layer 12. The buffer layer 1 is used as the protective layer 17 of these multilayer films.
The same material as 2 was used. As shown in FIG. 5, the magnetization curve is clearly separated into two parts. From this, as the buffer layer 12, Hf, Zr, Ti having a dense hexagonal structure is formed.
It can be seen that by using, the exchange interaction between the two magnetic layers is weakened and the exchange bias magnetic field from the antiferromagnetic layer 16 is strongly applied to the one magnetic layer 15. In order to clarify the cause, X-ray diffraction was performed on the multilayer film, and the multilayer film using Hf, Zr, and Ti having a close-packed hexagonal structure as the buffer layer 12 showed strong (11
1) Orientation was shown (see FIG. 10). However, the multilayer film using the non-magnetic material having the face-centered cubic structure or the body-centered cubic structure as the buffer layer 12 and the multilayer film not using the buffer layer did not show strong (111) orientation.

As described above, when a nonmagnetic material having a dense hexagonal structure is used as the buffer layer 12, the exchange interaction between the two magnetic layers is weakened, and one magnetic layer 15 is antiferromagnetic. The exchange bias magnetic field from layer 16 is strongly applied. However, when a nonmagnetic material having a face-centered cubic structure or a body-centered cubic structure is used as the buffer layer 12, and when the buffer layer is not used, the exchange interaction between the two magnetic layers is strong, or The exchange bias magnetic field from the antiferromagnetic layer 16 is not sufficient.

FIG. 6 shows a magnetoresistive effect curve of a multilayer film which does not use a buffer layer. As shown in this figure, the multilayer film
Shows almost no magnetoresistive effect. This is because, as is clear from the magnetization curve of FIG. 2, the two magnetic layers exhibit similar magnetization processes with respect to the external magnetic field, and thus the directions of magnetization are always parallel.

Similarly, as shown in FIG. 7, a multilayer film using Cu, Ag, and Au having a face-centered cubic structure as the buffer layer 12 does not show the magnetoresistive effect.

The multilayer film using Cr, Nb, Ta having a body-centered cubic structure as the buffer layer 12 exhibits a relatively high magnetoresistance change rate as shown in FIG. However, as shown in FIG. 4, since the magnetization curve is not clearly divided into two parts, the magnetic field region with high electric resistance is narrow. When a magnetic field exceeding this magnetic field region is applied, the multilayer film will not return to the same magnetization state. This is because the magnetization curve has hysteresis. Therefore, it is preferable that the magnetic field region is wide.

On the other hand, the multilayer film using Hf, Zr, and Ti having the dense hexagonal structure as the buffer layer 12 of the present invention not only exhibits a relatively high magnetoresistance change rate but also has a high electric resistance. The area is large.

The present inventors have used Z as a buffer layer material.
A study was also conducted on a multilayer film using n, and the same result as when the buffer layer having the dense hexagonal structure was used was obtained. However, the multilayer film using Zn as the buffer layer material has a weaker (111) orientation than the multilayer film using Hf, Zr, and Ti. Therefore, the characteristics of the multilayer film using Zn as the buffer layer material were slightly inferior to those of the multilayer film using Hf, Zr, and Ti.

When Barkhausen noise is generated in the magnetoresistive effect curve, a mechanism for applying a bias magnetic field in a direction perpendicular to the magnetic field detection direction of the multilayer magnetoresistive effect film is effective in suppressing Barkhausen noise. There is.
When the magnetoresistive film is used for a narrow track magnetic head having a track width of 1 μm or less, the track width needs to be strictly defined. Therefore, as a mechanism for applying the bias magnetic field, a direct exchange bias from the antiferromagnetic layer A method of bringing the antiferromagnetic layer into contact with a portion of the magnetic layer other than the track to which the magnetic field is not applied is preferable.

In this embodiment, the magnetic layer is made of Ni-
Although the Fe-based alloy is used, even if a magnetic layer having another face-centered cubic structure is used, the changes in the magnetization curve and the magnetoresistive effect curve due to the buffer layer material are the same. However, the magnetic layer to which the exchange bias magnetic field is not directly applied from the antiferromagnetic layer needs to exhibit soft magnetism.
It is preferable to use a Ni-Fe based alloy or a Ni-Fe-Co based alloy.

Further, in this embodiment, C is used as the non-magnetic layer.
Although u was used, similar results can be obtained by using Au, Ag, or Al, which has a low electric resistivity. However, when a 3d transition metal is used for the magnetic layer, the non-magnetic layer is preferably Cu from the viewpoint of matching the Fermi surface with the magnetic layer.

Further, in this embodiment, as the antiferromagnetic layer,
Although the Fe-Mn-based alloy was used, other antiferromagnetic materials can also be used. As the antiferromagnetic material, Fe—Mn based alloys, alloys in which a corrosion resistance improving element is added to Fe—Mn based alloys, NiO and the like are preferable. As an alloy in which a corrosion resistance improving element is added to a Fe-Mn-based alloy, Fe-Mn-R
The u-based alloy is preferable in terms of corrosion resistance and high nail temperature.

In this embodiment, Hf, Zr, Ti, and Zn are used for the buffer layer 12, but H is substantially
A non-magnetic alloy containing f, Zr, Ti, and Zn as main components and having a close-packed hexagonal structure can achieve the same effects as those of the above-described embodiments.

[Example 2] A multilayer film having the same structure as that of Example 1 was formed. Ti was used as the buffer layer 12 in FIG. When the cross section was observed with a transmission electron microscope under different sputtering conditions, Ti was amorphous. The reason why Ti becomes amorphous is not clear, but Si
It is possible that it has reacted with the SiO ₂ spontaneously formed on the substrate. Therefore, the buffer layer 12 may be an oxide of Ti. When X-ray diffraction was performed on the multilayer film, the multilayer film showed strong (111) orientation. It is considered that since the multilayer film was formed on the amorphous metal, the (111) plane, which is the closest packed surface of the Ni—Fe alloy having a face-centered cubic structure, was easily oriented parallel to the substrate.

Further, as the buffer layer 12, Hf, Zr
The buffer layer 12 also became amorphous when using.

In this embodiment, Hf, Zr and Ti are used as the buffer layer 12, but Hf and Z are substantially used.
If it is an alloy containing r and Ti as the main components, the same effect as in the above embodiment can be obtained.

[Example 3] A multilayer film was formed in the same manner as in Example 1. In this example, as the magnetic layers 13 and 15 of FIG. 1, a Ni—Fe—Co alloy having a film thickness of 5 nm was used. The composition ratio of Ni and Fe is 80:20,
The Co concentration was changed. The substrate 11 was made of Si (100) single crystal. The thickness of the buffer layer 12 is 5n.
m Hf was used. The nonmagnetic layer 14 has a thickness of 2 nm of C.
I used u. The antiferromagnetic layer 16 has a thickness of 5 nm.
Fe-40 at% Mn alloy was used. In addition, the protective layer 1
Hf having a thickness of 5 nm was used for 7.

FIG. 11 shows the relationship between the Co concentration and the magnetoresistance change rate of the multilayer film. As shown in this figure, the magnetoresistance change rate increases as the Co concentration increases. In order to obtain the magnetoresistance change rate of 2.5% or more, the Co concentration needs to be 10% or more.

FIG. 12 shows the relationship between the Co concentration and the anisotropic magnetic field of the magnetic layer 13. As shown in this figure, when the Co concentration is increased, the anisotropic magnetic field of the magnetic layer 13 is increased. Magnetic layer 1
When the anisotropic magnetic field of 3 becomes high, there is a problem that the sensitivity to the magnetic field is lowered. As shown in FIG. 12, in order to keep the anisotropic magnetic field at 2.4 kA / m (30 Oe) or less, Co
The concentration needs to be 25 at% or less.

As described above, in order to obtain a high magnetoresistance change rate and a low anisotropic magnetic field of the magnetic layer, the Co concentration is set to 1
It is preferably 0 to 25 at%.

In order to bring the magnetocrystalline anisotropy constant of the magnetic layer close to zero and to lower the coercive force of the magnetic layer, Ni and F are used.
The composition ratio of e is preferably 75:25 to 85:15.

[Example 4] A multilayer film was formed in the same manner as in Example 1. In this example, Si (100) single crystal was used for the substrate 21 of FIG. In addition, the buffer layer 22
As the material, Ti, Zr, and Hf having a thickness of 5 nm were used. The magnetic layer 23 has a thickness of 5 nm of Ni-16 at% Fe-18.
At% Co alloy was used. The nonmagnetic layer 24 has a thickness of 2n
m of Cu was used. The magnetic layer 25 has a thickness of 4 nm of C
and the magnetic layer 26 has a thickness of 3 nm of Ni-16a.
A t% Fe-18at% Co alloy was used. Further, for the antiferromagnetic layer 27, a Fe-40 at% Mn alloy having a thickness of 5 nm was used. The protective layer 28 has a thickness of 5 nm of Ti,
Zr and Hf were used.

Table 1 shows the magnetoresistance change rate of the multilayer film. As shown in Table 1, by using Co for a part of the magnetic layer,
A high magnetoresistance change rate can be obtained.

[0068]

[Table 1]

In this embodiment, the magnetic layer 26 is made of Ni-
An Fe-Co based alloy was used. This is the face-centered cubic structure F
This is to facilitate the formation of the e-Mn-based alloy. Fe-
The Mn-based alloy exhibits a nail temperature above room temperature when it has a face-centered cubic structure. Therefore, even if an Fe-Mn-based alloy is formed on Co, the magnetic layer 26 is not necessary if the Fe-Mn-based alloy has a face-centered cubic structure.

In this embodiment, Co is used as the magnetic layer 25, but a high magnetoresistance change rate can be obtained by using an alloy containing Co as a main component.

In this embodiment, the magnetic layer 23 is made of N.
Although the i-Fe-Co alloy was used, similar results can be obtained by using other magnetic layers having a face-centered cubic structure. However, the magnetic layer to which the exchange bias magnetic field is not directly applied from the antiferromagnetic layer needs to exhibit soft magnetism, and as the magnetic layer 23, a Ni—Fe based alloy, Ni—Fe—Co is used.
It is preferable to use a system alloy.

In this embodiment, Cu is used as the nonmagnetic layer 24, but Au, Ag, and
Similar results are obtained with Al. However, when a 3d transition metal is used for the magnetic layer, the non-magnetic layer is preferably Cu from the viewpoint of matching the Fermi surface with the magnetic layer.

In this embodiment, the Fe-Mn alloy is used as the antiferromagnetic layer 27, but other antiferromagnetic materials can be used. As an antiferromagnetic material, Fe-M
An alloy obtained by adding a corrosion resistance improving element to an n-based alloy or an Fe-Mn-based alloy, NiO or the like is preferable. As an alloy obtained by adding a corrosion resistance improving element to an Fe-Mn-based alloy, Fe-Mn
A -Ru alloy is preferable from the viewpoint of corrosion resistance and high nail temperature.

Although Hf, Zr, and Ti are used as the buffer layer 22 in this embodiment, Hf, Z are substantially used.
If a non-magnetic alloy containing r and Ti as main components and having a close-packed hexagonal structure, the same effect as that of the above-mentioned embodiment can be obtained. Further, in order to make the multilayer film have (111) orientation, Hf, Zr,
It is preferable to use an amorphous alloy containing Ti as a main component.

[Example 5] A multilayer film was formed in the same manner as in Example 1. In this example, Si (100) single crystal was used for the substrate 31 of FIG. In addition, the buffer layer 32
As the material, Ti, Zr, and Hf having a thickness of 5 nm were used. The magnetic layer 33 and the magnetic layer 35 include Ni-16 having a thickness of 2 nm.
An at% Fe-18at% Co alloy was used. Non-magnetic layer 3
For Cu, 2 nm thick Cu was used. For the antiferromagnetic layer 36, a 3 nm thick Fe-40 at% Mn alloy was used.
For the exchange interaction blocking layer 37, Cu having a thickness of 1 nm was used. The protective layer 38 has a thickness of 5 nm of Ti, Zr,
Hf was used.

Table 2 shows the magnetoresistance change rate of the multilayer film. As shown in Table 2, it is possible to obtain a high magnetoresistance change rate by forming four magnetic layers and applying an exchange bias magnetic field from the antiferromagnetic layer to two of the magnetic layers.

[0077]

[Table 1]

In this embodiment, the magnetic layer has four layers, and the exchange bias magnetic field from the antiferromagnetic layer is applied to two of the magnetic layers. However, even if the number of magnetic layers is further increased, the magnetic resistance is high. The rate of change can be obtained.

Example 6 A magnetoresistive effect element using the multilayer film of the present invention was formed. In this example, Hf having a thickness of 5 nm was used as the buffer layer 12 in FIG. Magnetic layer 1
3 and the magnetic layer 15 have a thickness of 5 nm of Ni-16at.
% Fe-18 at% Co alloy was used. Cu having a thickness of 2 nm was used for the nonmagnetic layer 14. For the antiferromagnetic layer 16, a Fe-40 at% Mn alloy having a thickness of 5 nm was used.
The protective layer 17 was made of Hf having a thickness of 5 nm.

FIG. 15 shows the structure of the magnetoresistive effect element.
The magnetoresistive effect element has a structure in which a multilayer magnetoresistive effect film 41 and an electrode 42 are sandwiched between shield layers 43 and 44.
When a magnetic field was applied to the magnetoresistive effect element and the change in electric resistivity was measured, it was found that the magnetoresistive effect element using the multilayer magnetoresistive effect film of the present invention was 1.6 kA / m (20 Oe).
A magnetic resistance change rate of about 3% was exhibited with an applied magnetic field of about 3%.
The reproduction output of the magnetoresistive effect element of the present invention is Ni-
2.7 compared with the magnetoresistive effect element using the Fe single layer film.
It was double.

[Embodiment 7] A magnetic head was produced using the magnetoresistive effect element described in Embodiment 6. The structure of the magnetic head is shown below. FIG. 16 is a perspective view when a part of the recording / reproducing separated type head is cut. The portion of the multilayer magnetoresistive film 51 sandwiched between the shield layers 52 and 53 functions as a reproducing head, and the lower magnetic pole 55 and the upper magnetic pole 56 sandwiching the coil 54 function as a recording head. The multilayer magnetoresistive effect film 51 is composed of the multilayer film described in the fifth embodiment. Further, a material having a multilayer structure of Cr / Cu / Cr is used for the electrode 58.

The manufacturing method of this head will be described below.

A sintered body containing Al ₂ O ₃ .TiC as a main component was used as the slider substrate 57. A Ni-Fe alloy formed by a sputtering method was used for the shield layer and the recording magnetic pole. The thickness of each magnetic film was as follows. Upper and lower seams
Field layers 52 and 53 are 1.0 μm, lower magnetic pole 55, and upper part 5
6 was 3.0 μm, and Al ₂ O ₃ formed by sputtering was used as the gap material between the layers. The film thickness of the gap layer was 0.2 μm between the shield layer and the magnetoresistive effect element, and 0.4 μm between the recording magnetic poles. Further, the distance between the reproducing head and the recording head is set to about 4 μm, and this gap is also made of Al ₂
Formed with O ₃ . Cu having a film thickness of 3 μm was used for the coil 54.

When recording / reproducing was performed with the magnetic head having the above-mentioned structure, a reproducing output 2.6 times higher than that of the magnetic head using the Ni--Fe single layer film was obtained. It is considered that this is because the magnetic head of the present invention uses a multilayer film having a high magnetoresistive effect.

Further, the magnetoresistive effect element of the present invention can be used in a magnetic field detector other than the magnetic head.

Further, by using the above magnetic head in a magnetic recording / reproducing apparatus, a high performance magnetic recording / reproducing apparatus can be obtained.

[0087]

As described above, in the multilayer film in which the exchange bias magnetic field from the antiferromagnetic layer is applied to a part of the magnetic layer,
By forming a buffer layer made of a non-magnetic alloy having a dense hexagonal structure such as Hf, Zr, and Ti on the substrate,
A multilayer film exhibiting a high magnetoresistance change rate at a low magnetic field can be obtained. Further, the multilayer magnetoresistive effect film is suitable for a magnetoresistive effect element, a magnetic field sensor, a magnetic head and the like. Further, by using the above magnetic head, a high performance magnetic recording / reproducing apparatus can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view showing a structure of a multilayer magnetoresistive effect film of the present invention.

FIG. 2 is a magnetization curve diagram of a multilayer film having no buffer layer.

FIG. 3 is a magnetization curve diagram of a multilayer film using a buffer layer having a face-centered cubic structure.

FIG. 4 is a magnetization curve diagram of a multilayer film using a buffer layer having a body-centered cubic structure.

FIG. 5 is a magnetization curve diagram of a multilayer film of the present invention using a buffer layer having a dense hexagonal structure.

FIG. 6 is a magnetoresistive effect curve diagram of a multilayer film having no buffer layer.

FIG. 7 is a magnetoresistive effect curve diagram of a multilayer film using a buffer layer having a face-centered cubic structure.

FIG. 8 is a magnetoresistive effect curve diagram of a multilayer film using a buffer layer having a body-centered cubic structure.

FIG. 9 is a magnetoresistive effect curve diagram of the multilayer film of the present invention using a buffer layer having a dense hexagonal structure.

FIG. 10 is a diagram showing an X-ray diffraction profile of the multilayer magnetoresistive effect film of the present invention.

FIG. 11 is a graph showing the relationship between the Co concentration and the magnetoresistance change rate of the multilayer magnetoresistive effect film of the present invention.

FIG. 12 is a graph showing the relationship between the Co concentration of the multilayer magnetoresistive film of the present invention and the anisotropic magnetic field of the magnetic layer.

FIG. 13 is a cross-sectional view showing the structure of a multilayer magnetoresistive effect film using a Co-based magnetic layer as a part of the magnetic layer of the present invention.

FIG. 14 is a cross-sectional view showing the structure of a multilayer magnetoresistive film having four magnetic layers according to the present invention.

FIG. 15 is a perspective view showing the structure of a magnetoresistive effect element using the multilayer magnetoresistive effect film of the present invention.

FIG. 16 is a perspective view showing the structure of the magnetic head of the present invention.

[Explanation of symbols]

11, 21, 31 ... Substrate, 12, 22, 32 ... Buffer layer, 13, 15, 23, 25, 26, 33, 35 ... Magnetic layer, 14, 24, 34 ... Nonmagnetic layer, 16, 27, 36 ...
Antiferromagnetic layer, 17, 28, 38 ... Protective layer, 37 ... Exchange interaction blocking layer, 41 ... Multilayer magnetoresistive effect film, 42 ... Electrode, 43, 44 ... Shield layer, 51 ... Multilayer magnetoresistive effect film , 52, 53 ... Shield layer, 54 ... Coil, 55 ... Lower magnetic pole, 56 ... Upper magnetic pole, 57 ... Substrate, 58 ... Electrode.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location G11B 11/10 A 9075-5D Z 9075-5D H01L 43/08 Z 9274-4M (72) Inventor Mikio Suzuki 1-280, Higashi Koigokubo, Kokubunji, Tokyo, Central Research Laboratory, Hitachi, Ltd. (72) Inventor Masaaki Nihon 1-280, Higashi Koikeku, Tokyo Kokubunji City, Central Research Laboratory, Hitachi, Ltd. (72) Inventor, Masahiro Kitada Tokyo 1-280, Higashi Koikekubo, Kokubunji City, Central Research Laboratory, Hitachi, Ltd. (72) Inventor, Hisano Tsuneda 1-280, Higashi Koikeku, Tokyo Kokubunji City, Central Research Laboratory, Hitachi Ltd.

Claims (30)

[Claims] 1. A magnetic layer of two or more layers is divided by a non-magnetic layer, and an exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer, and at least one magnetic layer has an antiferromagnetic layer. The exchange bias magnetic field from the magnetic layer is not directly applied. In a multilayer magnetoresistive film using a multilayer film, a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is provided between the multilayer film and the substrate. A multi-layered magnetoresistive effect film characterized by being formed. 2. The multilayer magnetoresistive effect film according to claim 1, wherein the non-magnetic metal having the dense hexagonal structure is Ti, H.
A multi-layer magnetoresistive effect film comprising an alloy containing f, Zn, Zr or Ti, Hf, Zn, Zr as a main component. 3. The multilayer magnetoresistive effect film according to claim 1, wherein the nonmagnetic metal having the dense hexagonal structure is Ti, Hf, or Zr. 4. An exchange bias magnetic field from an antiferromagnetic layer is applied to at least one magnetic layer by dividing two or more magnetic layers into nonmagnetic layers, and at least one magnetic layer is antiferromagnetic. In a multilayer magnetoresistive effect film using a multilayer film to which an exchange bias magnetic field from a magnetic layer is not directly applied, at least one metal selected from Ti, Hf and Zr is provided between the multilayer film and the substrate. , Or Ti, Hf, Zr
A multi-layered magnetoresistive effect film in which a buffer layer made of a non-magnetic metal containing at least one kind of metal selected from among the above is formed, and the buffer layer is in an amorphous state. 5. The multilayer magnetoresistive effect film according to claim 1, wherein the magnetic layer has a face-centered cubic structure.
A multilayer magnetoresistive effect film having a (111) orientation. 6. A magnetic layer of four or more layers is divided by non-magnetic layers, an exchange bias magnetic field from an antiferromagnetic layer is applied to at least two magnetic layers, and at least two magnetic layers are anti-strong. A multilayer magnetoresistive effect film characterized by using a multilayer film to which an exchange bias magnetic field from a magnetic layer is not directly applied. 7. The multilayer magnetoresistive film according to claim 6, wherein a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is formed between the multilayer magnetoresistive film and the substrate. Characteristic multilayer magnetoresistive effect film. 8. The multilayer magnetoresistive effect film according to claim 7, wherein the nonmagnetic metal having the dense hexagonal structure is Ti, H.
A multi-layer magnetoresistive effect film comprising an alloy containing f, Zn, Zr or Ti, Hf, Zn, Zr as a main component. 9. The multilayer magnetoresistive effect film according to claim 8, wherein the nonmagnetic metal having the dense hexagonal structure is Ti, H.
A multilayer magnetoresistive effect film characterized by being f and Zr. 10. The multilayer magnetoresistive effect film according to claim 6, wherein T is provided between the multilayer magnetoresistive effect film and the substrate.
At least one metal selected from i, Hf, and Zr,
Alternatively, at least 1 selected from Ti, Hf, and Zr
A multi-layered magnetoresistive effect film, characterized in that a buffer layer made of a non-magnetic metal whose main component is a kind of metal is formed, and the buffer layer is in an amorphous state. 11. The multilayer magnetoresistive effect film according to claim 7, wherein the magnetic layer has a face-centered cubic structure and is (111) oriented. film. 12. The multilayer magnetoresistive effect film according to claim 1, wherein at least a part of the magnetic layer is a Ni—Fe based alloy or a Ni—Fe—Co based alloy. Multilayer magnetoresistive film. 13. The multilayer magnetoresistive effect film according to claim 12, wherein the Ni concentration of the Ni—Fe—Co alloy is 1 or less.
A multilayer magnetoresistive effect film, characterized in that it is 0 to 25 at%. 14. The multilayer magnetoresistive effect film according to claim 1, wherein at least a part of the magnetic layer is Co.
Alternatively, a multilayer magnetoresistive effect film, which is an alloy containing Co as a main component. 15. The multilayer magnetoresistive effect film according to claim 1, wherein at least a part of the nonmagnetic layer is Cu. 16. A magnetic layer of two or more layers is divided by a non-magnetic layer,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, the multi-layered magnetoresistive effect film in which a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is formed between at least a part of the above-mentioned multi-layered magnetoresistive film is used. And a magnetoresistive effect element. 17. A magnetic layer of two or more layers is divided by a non-magnetic layer,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, at least one metal selected from Ti, Hf, and Zr or Ti, Hf, and Z is provided between the multi-layered film and the substrate.
A buffer layer made of a non-magnetic metal containing at least one metal selected from r as a main component is formed, and the buffer layer is in an amorphous state. A magnetoresistive effect element characterized by. 18. A magnetic layer of four or more layers is divided by a non-magnetic layer,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A magnetoresistive effect element characterized by using the multi-layered magnetoresistive effect film at least partially. 19. A magnetic layer of two or more layers is divided by a non-magnetic layer,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, the multi-layered magnetoresistive effect film in which a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is formed between at least a part of the above-mentioned multi-layered magnetoresistive film is used. And a magnetic head. 20. Two or more magnetic layers are divided into non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, at least one metal selected from Ti, Hf, and Zr or Ti, Hf, and Z is provided between the multi-layered film and the substrate.
A buffer layer made of a non-magnetic metal containing at least one metal selected from r as a main component is formed, and the buffer layer is in an amorphous state. Magnetic head. 21. Four or more magnetic layers are divided by non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A magnetic head using the multi-layered magnetoresistive effect film at least partially. 22. Two or more magnetic layers are divided into non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magneto-resistive effect film, a multi-layered magneto-resistive effect film in which a buffer layer made of a non-magnetic metal having a dense hexagonal structure is formed between at least a part of the multi-layered magnetoresistive effect film A composite magnetic head characterized by combining an element and an inductive magnetic head. 23. Two or more magnetic layers are divided by non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, at least one metal selected from Ti, Hf, and Zr or Ti, Hf, and Z is provided between the multi-layered film and the substrate.
A buffer layer made of a non-magnetic metal containing at least one kind of metal selected from r as a main component is formed, and a magnetic layer using at least a part of the multilayer magnetoresistive film in which the buffer layer is in an amorphous state. A composite magnetic head comprising a combination of a resistance effect element and an inductive magnetic head. 24. A magnetic layer of four or more layers is divided into non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A composite magnetic head comprising a combination of a magnetoresistive effect element using at least a part of the multi-layered magnetoresistive effect film and an inductive magnetic head. 25. Two or more magnetic layers are divided into non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, a magnetic head using a multi-layered magnetoresistive effect film in which a buffer layer made of a nonmagnetic metal having a dense hexagonal structure is formed between at least a part of the multi-layered magnetoresistive effect film and the substrate. A magnetic recording / reproducing apparatus characterized in that it is equipped with. 26. A magnetic layer of two or more layers is divided by a non-magnetic layer,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, at least one metal selected from Ti, Hf, and Zr or Ti, Hf, and Z is provided between the multi-layered film and the substrate.
A buffer layer made of a non-magnetic metal containing at least one kind of metal selected from r as a main component is formed, and a magnetic layer using at least a part of a multilayer magnetoresistive effect film in which the buffer layer is in an amorphous state. A magnetic recording / reproducing apparatus having a head. 27. A magnetic layer of four or more layers is divided into non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A magnetic recording / reproducing apparatus comprising a magnetic head using at least a part of the multi-layered magnetoresistive film. 28. Two or more magnetic layers are divided by a non-magnetic layer,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magneto-resistive effect film, a multi-layered magneto-resistive effect film in which a buffer layer made of a non-magnetic metal having a dense hexagonal structure is formed between at least a part of the multi-layered magnetoresistive effect film A magnetic recording / reproducing apparatus comprising a composite magnetic head in which an element and an inductive magnetic head are combined. 29. Two or more magnetic layers are divided into non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least one magnetic layer, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least one magnetic layer. In the multi-layered magnetoresistive effect film, at least one metal selected from Ti, Hf, and Zr or Ti, Hf, and Z is provided between the multi-layered film and the substrate.
A buffer layer made of a non-magnetic metal containing at least one kind of metal selected from r as a main component is formed, and a magnetic layer using at least a part of a multilayer magnetoresistive effect film in which the buffer layer is in an amorphous state. A magnetic recording / reproducing apparatus comprising a composite magnetic head in which a resistance effect element and an inductive magnetic head are combined. 30. Dividing four or more magnetic layers by non-magnetic layers,
An exchange bias magnetic field from the antiferromagnetic layer is applied to at least two magnetic layers, and an exchange bias magnetic field from the antiferromagnetic layer is not directly applied to at least two magnetic layers. A magnetic recording / reproducing apparatus comprising a composite type magnetic head in which a magnetoresistive effect element using at least a part of the multi-layered magnetoresistive effect film and an induction type magnetic head are combined.