JPH0658951B2 - Stacked solid-state imaging device - Google Patents
Stacked solid-state imaging deviceInfo
- Publication number
- JPH0658951B2 JPH0658951B2 JP60157886A JP15788685A JPH0658951B2 JP H0658951 B2 JPH0658951 B2 JP H0658951B2 JP 60157886 A JP60157886 A JP 60157886A JP 15788685 A JP15788685 A JP 15788685A JP H0658951 B2 JPH0658951 B2 JP H0658951B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- solid
- imaging device
- state imaging
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title claims description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 description 11
- 206010047571 Visual impairment Diseases 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】 ［従来の技術］ 本発明は、積層型固体撮像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Prior Art] The present invention relates to a stacked solid-state imaging device.
ＣＣＤ撮像素子等の固体撮像素子を信号電荷読み出し部
として用い、この上に光電変換部として光導電膜を積層
して二階建て構造とした積層型固体撮像装置が注目され
ている。この積層型撮像装置は、従来の一階建ての固体
撮像素子に比べて光学的開口率が大きくとれるため高感
度であり、また光学的開口率を大きくするための製造上
の制約がないため画素の高密度化が可能である、といっ
た基本的特徴を有する。Attention has been focused on a stacked solid-state image pickup device having a two-story structure in which a solid-state image pickup device such as a CCD image pickup device is used as a signal charge reading unit, and a photoconductive film is stacked thereon as a photoelectric conversion unit. This stacked type image pickup device has high optical aperture ratio as compared with the conventional one-story solid-state image pickup device and thus has high sensitivity, and there is no manufacturing constraint for increasing the optical aperture ratio. It has a basic feature that high density can be achieved.
この様な積層型固体撮像装置において、光導電膜として
は例えばアモルファスＳｉ（ａ−Ｓｉ：Ｈ）膜等が用い
られ、信号電荷としては多くの場合移動度の高い電子が
用いられる。光照射により光導電膜内に生成された電子
正孔対のうち電子を信号電荷としてチップ基板に形成さ
れた蓄積ダイオードに輸送するためには、チップ基板表
面に各画素毎に設けられた蓄積ダイオードの電極と光導
電膜上の透明電極との間に所定の電界が印加される。こ
のとき、透明電極から光導電膜に電子が注入されること
を防止することが必要で、そのためには光導電膜と透明
電極の間にブロッキング層を介在させる。このブロッキ
ング層として従来は、光導電膜にイントリンシックのａ
−Ｓｉ：Ｈ膜を用いた場合ｐ型ａ−Ｓｉ：Ｈ膜等が用い
られる。In such a stacked solid-state imaging device, for example, an amorphous Si (a-Si: H) film is used as the photoconductive film, and electrons having high mobility are often used as the signal charges. In order to transport the electrons of the electron-hole pairs generated in the photoconductive film by light irradiation as signal charges to the storage diode formed on the chip substrate, the storage diode provided for each pixel on the surface of the chip substrate. A predetermined electric field is applied between the electrode and the transparent electrode on the photoconductive film. At this time, it is necessary to prevent electrons from being injected from the transparent electrode into the photoconductive film, and for that purpose, a blocking layer is interposed between the photoconductive film and the transparent electrode. Conventionally, as this blocking layer, a
When a -Si: H film is used, a p-type a-Si: H film or the like is used.
［発明が解決しようとする問題点］ 積層型固体撮像装置では、光電変換部として光導電膜を
用いているため、従来の一階建ての固体撮像素子に比べ
て残像が大きいことが問題となる。特に高輝度被写体を
撮像した場合のいわゆるハイライト残像は画質を大きく
劣化させる。このハイライト残像は、光導電膜内に時定
数の大きいトラップが存在することや、読み出し切れな
い信号電荷が残ることに起因する。この様な残像を少な
くするためには、信号電荷読み出しを行う前に余剰電荷
の排出を行うことが必要である。従来この様な余剰電荷
の排出を行うために、チップ基板に余剰電荷排出のため
のいわゆるオーバーフロードレインを設けることが行わ
れている。しかしながら、この様なオーバーフロードレ
イン構造を用いると、蓄積ダイオード部や転送部の駆動
に大きい制約を受けることになる。[Problems to be Solved by the Invention] Since a stacked solid-state imaging device uses a photoconductive film as a photoelectric conversion unit, it has a problem that an afterimage is larger than that of a conventional one-story solid-state imaging device. . In particular, a so-called highlight afterimage when a high-luminance subject is imaged deteriorates image quality. This highlight afterimage is caused by the presence of traps having a large time constant in the photoconductive film and the fact that signal charges that cannot be read out remain. In order to reduce such an afterimage, it is necessary to discharge the excess charge before reading the signal charge. Conventionally, in order to discharge the surplus charges in this way, a so-called overflow drain for discharging the surplus charges has been provided on the chip substrate. However, when such an overflow drain structure is used, driving of the storage diode section and the transfer section is greatly restricted.
本発明は、簡単な構造で余剰電荷の排出を確実に行ない
得るようにした、残像の少ない積層型固体撮像装置を提
供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a stacked solid-state image pickup device having a simple structure and capable of reliably discharging excess charges and having a small afterimage.
［問題点を解決する手段および作用］ 本発明は、積層型固体撮像装置において、光導電膜とそ
の上の透明電極の間に設けるブロッキング層として、所
定の電圧でトンネル電流が流れる極薄絶縁膜を介在させ
る。そして光導電膜内の余剰電荷は、透明電極と光導電
膜下の画素電極との間に撮像時とは逆の電界を印加して
トンネル効果により透明電極側に排出するようにする。[Means and Actions for Solving Problems] The present invention relates to a laminated solid-state imaging device, which is an ultrathin insulating film through which a tunnel current flows at a predetermined voltage as a blocking layer provided between a photoconductive film and a transparent electrode thereabove. Intervene. Then, the excess electric charges in the photoconductive film are discharged to the transparent electrode side by the tunnel effect by applying an electric field opposite to that at the time of imaging between the transparent electrode and the pixel electrode below the photoconductive film.
［実施例］ 以下本発明の実施例を説明する。[Examples] Examples of the present invention will be described below.
第１図は一実施例の固体撮像装置の要部断面図である。
この実施例では、固体撮像素子チップ基板としてインタ
ーライン転送型ＣＣＤ撮像素子を用い、これに積層する
光導電膜としてａ−Ｓｉ：Ｈ膜を用いている。即ち、１
はｐ型Ｓｉ基板であり、その表面部にｎ＋＋型層２およ
びｎ＋型層３が各画素ごとに二次元的に配列形成されて
いる。このｎ＋＋型層２およびｎ＋型層３と基板１との
間の接合が信号電荷の蓄積ダイオードとなっている。４
は埋込みチャネルを形成するためのｎ＋型層であり、図
面に垂直な方向に連続的に形成され、この上に第１ゲー
ト絶縁膜５１を介して第１層多結晶シリコン電極６１が
形成され、更にその上に第２ゲート絶縁膜５２を介して
第２層多結晶シリコン電極６２が形成されている。第１
層多結晶シリコン電極６１およ第２層多結晶シリコン電
極６２は図面に垂直な方向に互いに一部重なる状態で交
互に多数配列形成されて、信号電荷読み出し部となる垂
直ＣＣＤの転送電極を構成する。第１層多結晶シリコン
電極６１は蓄積ダイオードの信号電荷を垂直ＣＣＤに転
送するためのフィールドシフト用ゲート電極をも兼ねて
いる。７はチャネル・ストッパとしてのｐ＋型層であ
る。蓄積ダイオードおよび垂直ＣＣＤが形成されたチッ
プ基板はＣＶＤ絶縁膜８１で覆われ、これにコンタクト
孔を開けて各蓄積ダイオードのｎ＋＋型層２にコンタク
トする第１層Ａｌ電極９１が、蓄積ダイオード上から垂
直ＣＣＤ上に延在するように形成されている。更にこの
上にＣＶＤ絶縁膜８２が堆積され、これにコンタクト孔
を開けて各画素ごとに第１層Ａｌ電極９１にコンタクト
する第２層Ａｌ電極９２が配設されている。この第２層
Ａｌ電極９２は各画素の信号電荷を収集する電極とな
る。FIG. 1 is a sectional view of a main part of a solid-state imaging device according to an embodiment.
In this embodiment, an interline transfer CCD image pickup device is used as a solid-state image pickup device chip substrate, and an a-Si: H film is used as a photoconductive film to be laminated thereon. That is, 1
Is a p-type Si substrate, and an n ++ -type layer 2 and an n + -type layer 3 are two-dimensionally arranged and formed for each pixel on the surface portion thereof. The junction between the n ++ type layer 2 and n + -type layer 3 and the substrate 1 is in the storage diode signal charges. Four
Is an n + -type layer for forming a buried channel, which is continuously formed in a direction perpendicular to the drawing, on which a first-layer polycrystalline silicon electrode 6 1 is formed via a first gate insulating film 5 1. It is formed, and further through the second gate insulating film 5 2 second-layer polycrystalline silicon electrode 6 2 is formed thereon. First
A plurality of layer polycrystalline silicon electrodes 6 1 and second layer polycrystalline silicon electrodes 6 2 are alternately arranged in a state that they partially overlap each other in a direction perpendicular to the drawing, and are transfer electrodes of a vertical CCD that serves as a signal charge reading portion. Make up. The first-layer polycrystalline silicon electrode 61 also serves as a field shift gate electrode for transferring the signal charges of the storage diode to the vertical CCD. Reference numeral 7 is a p + type layer as a channel stopper. Chip board storage diode and the vertical CCD are formed is covered with CVD insulating film 81, the first layer Al electrode 9 1 contact opening contact holes in the n ++ type layer 2 of the storage diode thereto, accumulation It is formed so as to extend from above the diode to above the vertical CCD. Furthermore the upper CVD insulating film 82 is deposited, this second layer Al electrode 9 2 are disposed to contact the first layer Al electrode 9 1 for each pixel by opening the contact holes. The second layer Al electrode 9 2 is an electrode for collecting the signal charges of each pixel.
このように構成されたＣＣＤ撮像素子チップ基板上に、
光導電膜としてこの実施例ではイントリンシックのａ−
Ｓｉ：Ｈ膜１０が積層されている。このａ−Ｓｉ：Ｈ膜
１０の表面には、電子注入を防止するブロッキング層と
して、所定の電圧以上でトンネル電流が流れる数十Å程
度の極薄絶縁膜１１を介して、ＩＴＯなどの透明電極１
２が形成されている。極薄絶縁膜１１はこの実施例では
ａ−Ｓｉ：Ｈ膜１０を熱酸化して得られる酸化膜であ
る。ａ−Ｓｉ：Ｈ膜１０は各画素ごとに独立となるよう
に例えば、膜形成後エッチングにより分離され、分離溝
はＣＶＤにより絶縁膜１３および多結晶シリコン膜１４
が埋め込まれている。このようにａ−Ｓｉ：Ｈ膜１０が
各画素毎に独立に形成されているのみならず、この実施
例では透明電極１２も同様に各画素毎に分離形成されて
いる。そして各透明電極に所定の電位を与えるための金
属電極１５が形成されている。On the CCD image sensor chip substrate configured as described above,
In this embodiment, as a photoconductive film, an intrinsic a-
A Si: H film 10 is laminated. On the surface of the a-Si: H film 10, as a blocking layer for preventing electron injection, a transparent electrode such as ITO is provided through an ultrathin insulating film 11 of about several tens of liters at which a tunnel current flows at a predetermined voltage or more. 1
2 is formed. The ultra-thin insulating film 11 is an oxide film obtained by thermally oxidizing the a-Si: H film 10 in this embodiment. The a-Si: H film 10 is isolated by, for example, etching after film formation so that the a-Si: H film 10 is independent for each pixel, and the isolation groove is formed by the insulating film 13 and the polysilicon film 14 by CVD.
Is embedded. As described above, not only the a-Si: H film 10 is formed independently for each pixel, but also the transparent electrode 12 is similarly formed separately for each pixel in this embodiment. Then, a metal electrode 15 for applying a predetermined potential to each transparent electrode is formed.
このように構成された積層型固体撮像装置の光電変換部
および蓄積ダイオード部のエネルギー・バンド図を第２
図に示す。第２図は信号電荷蓄積期間の状態であり、透
明電極１２側が蓄積ダイオードの電極９に対して負電位
となるように電位関係が設定される。但しこのとき、極
薄絶縁膜１１に掛かる電界はトンネル効果が生じない程
度のものとする。この結果光照射によりａ−Ｓｉ：Ｈ膜
１０内で電子正孔対が生成されると、そのうち電子が信
号電荷として蓄積ダイオード側に走行し、正孔は透明電
極１２側に走行する。この間蓄積ダイオードは電気的に
フローティングの状態にあり、信号電荷の蓄積により電
位が低下する。この蓄積期間の後、フィールドシフトパ
ルスにより信号電荷は垂直ＣＣＤに転送され、読み出し
が行われる。信号電荷蓄積の期間、極薄絶縁膜１１は透
明電極１２からａ−Ｓｉ：Ｈ膜１０への電子注入を阻止
するブロッキング層として働く。The energy band diagram of the photoelectric conversion unit and the storage diode unit of the stacked solid-state imaging device configured as described above is shown in FIG.
Shown in the figure. FIG. 2 shows the state of the signal charge storage period, and the potential relationship is set so that the transparent electrode 12 side has a negative potential with respect to the electrode 9 of the storage diode. However, at this time, the electric field applied to the ultra-thin insulating film 11 is such that no tunnel effect occurs. As a result, when electron-hole pairs are generated in the a-Si: H film 10 by light irradiation, electrons travel as signal charges to the storage diode side, and holes travel to the transparent electrode 12 side. During this period, the storage diode is in an electrically floating state, and the potential drops due to the accumulation of signal charges. After this accumulation period, the signal charges are transferred to the vertical CCD by the field shift pulse and read out. During the signal charge accumulation period, the ultrathin insulating film 11 functions as a blocking layer that blocks the injection of electrons from the transparent electrode 12 into the a-Si: H film 10.
信号電荷読み出し後、蓄積ダイオード電位は初期状態に
戻る。そして次の信号電荷読み出しサイクルに入る前
に、透明電極１２に正電位を与えてａ−Ｓｉ：Ｈ膜１０
内の過剰電子の掃出しを行う。このとき電位関係は極薄
絶縁膜１１に掛かる電界が、この極薄絶縁膜１１をトン
ネル電流が流れる程度の値になるように設定される。こ
れにより、ａ−Ｓｉ：Ｈ膜１０内の過剰電子が極薄絶縁
膜１１をトンネリングして透明電極１２から排出され
る。After reading the signal charge, the storage diode potential returns to the initial state. Then, before entering the next signal charge read cycle, a positive potential is applied to the transparent electrode 12 to apply the a-Si: H film 10 thereto.
Sweep out excess electrons inside. At this time, the potential relationship is set so that the electric field applied to the ultrathin insulating film 11 becomes a value at which a tunnel current flows through the ultrathin insulating film 11. As a result, excess electrons in the a-Si: H film 10 tunnel through the ultrathin insulating film 11 and are discharged from the transparent electrode 12.
以上のようにこの実施例では、積層型固体撮像装置の透
明電極下にこの透明電極からの電子注入を防止するブロ
ッキング層として極薄絶縁膜を介在させ、かつａ−Ｓ
ｉ：Ｈ膜の過剰電子はこの極薄絶縁膜を流れるトンネル
電流の形で透明電極側に排出することにより残像の低減
を図っている。従ってＣＣＤ撮像素子チップ基板にオー
バーフロードレインを設ける構造と比べて、信号電荷蓄
積および転送の駆動が容易になる。またｐ型層をブロッ
キング層として用いる従来構造に比べて、極薄絶縁膜の
膜厚や材料を選択することにより、ブロッキング層とし
ての機能を最適設計することが容易である。As described above, in this embodiment, the ultrathin insulating film is interposed below the transparent electrode of the laminated solid-state imaging device as a blocking layer for preventing the injection of electrons from the transparent electrode, and aS
Excess electrons in the i: H film are discharged to the transparent electrode side in the form of tunnel current flowing through the ultra-thin insulating film to reduce the afterimage. Therefore, as compared with the structure in which the overflow drain is provided on the CCD image pickup device chip substrate, driving of signal charge storage and transfer becomes easier. Further, as compared with the conventional structure in which the p-type layer is used as the blocking layer, it is easier to optimally design the function as the blocking layer by selecting the film thickness and material of the ultrathin insulating film.
またこの実施例では、光導電膜であるａ−Ｓｉ：Ｈ膜を
各画素毎に分離しており、画素間のクロストークによる
解像度劣化が防止される。これは特に、画素数が例えば
1000×1000という高解像度の静止画用カメラを構成しよ
うとする場合に非常に有効である。Further, in this embodiment, the a-Si: H film, which is a photoconductive film, is separated for each pixel, and deterioration of resolution due to crosstalk between pixels is prevented. This is especially true if the number of pixels is
It is very effective when constructing a high resolution still image camera of 1000 × 1000.
第３図は本発明の他の実施例の固体撮像装置の要部断面
図である。第１図と対応する部分には第１図と同一符号
を付して詳細な説明は省略する。第１図の実施例ではａ
−Ｓｉ：Ｈ膜１０を画素毎に分離したのに対して、この
実施例ではチップ基板全面に一様にａ−Ｓｉ：Ｈ膜１０
を形成している。そしてこのａ−Ｓｉ：Ｈ膜１０上全面
に極薄絶縁膜１１を介して透明電極１２を形成してい
る。FIG. 3 is a sectional view of a main part of a solid-state image pickup device according to another embodiment of the present invention. The parts corresponding to those in FIG. 1 are designated by the same reference numerals as those in FIG. 1 and their detailed description is omitted. In the embodiment shown in FIG. 1, a
While the -Si: H film 10 is separated for each pixel, in this embodiment, the a-Si: H film 10 is uniformly formed on the entire surface of the chip substrate.
Is formed. Then, a transparent electrode 12 is formed on the entire surface of the a-Si: H film 10 with an extremely thin insulating film 11 interposed therebetween.
先の実施例でもこの実施例でも、感光画素は基本的には
第２層Ａｌ電極９２で定義されるので、撮像管ターゲッ
トと同様にａ−Ｓｉ：Ｈ膜１０が全面に形成されていて
も、格別に高解像度が要求される用途に使用するのでな
い限り問題ない。そしてこの実施例でも、ブロッキング
層として極薄絶縁膜１１を用いてａ−Ｓｉ：Ｈ膜１０の
過剰電子をトンネル電流として透明電極側に排出するよ
うにすることにより、簡単な構造で効果的に残像の低減
を図ることができる。Also in Embodiment this embodiment in the example, since the photosensitive pixel is basically defined by the second layer Al electrode 9 2, similarly to the image pickup tube target a-Si: H film 10 is formed on the entire surface However, there is no problem unless it is used for an application requiring a particularly high resolution. Also in this embodiment, by using the ultra-thin insulating film 11 as the blocking layer and discharging excess electrons of the a-Si: H film 10 as a tunnel current to the transparent electrode side, it is possible to effectively use a simple structure. Afterimages can be reduced.
本発明は上記した実施例に限られるものではない。例え
ば固体撮像素子チップ基板として上記実施例ではＣＣＤ
撮像素子の場合を説明したが、ＭＯＳ型撮像素子を用い
た場合にも本発明は有効である。光導電膜や極薄絶縁
膜、透明電極等の材料も必要に応じて他のものを用いる
ことができる。The present invention is not limited to the above embodiments. For example, as the solid-state image sensor chip substrate, the CCD in the above embodiment
Although the case of the image pickup device has been described, the present invention is also effective when a MOS type image pickup device is used. Other materials such as a photoconductive film, an ultrathin insulating film, and a transparent electrode can be used as necessary.
［発明の効果］ 本発明によれば、光導電膜への透明電極からの電荷注入
を防止するブロッキング層として極薄絶縁膜を用い、か
つ光導電膜の余剰信号電荷をトンネル効果を利用して透
明電極側に排出するように構成することで、簡単な構造
で効果的に残像を低減できる積層型固体撮像装置が得ら
れる。EFFECTS OF THE INVENTION According to the present invention, an ultrathin insulating film is used as a blocking layer for preventing charge injection from the transparent electrode into the photoconductive film, and excess signal charges in the photoconductive film are tunneled. By being configured to discharge to the transparent electrode side, it is possible to obtain a laminated solid-state imaging device that can effectively reduce afterimage with a simple structure.
第１図は本発明の一実施例の積層型固体撮像装置の要部
断面図、第２図はその光電変換部および信号電荷蓄積部
のエネルギー・バンドを示す図、第３図は他の実施例の
積層型固体撮像装置の要部断面図である。 １……ｐ型Ｓｉ基板、２……ｎ＋＋型層（信号電荷蓄積
ダイオード）、３……ｎ＋型層、４……ｎ＋型層（ＣＣ
Ｄ埋込みチャネル用）、５１，５２……ゲート絶縁膜、
６１，６２……多結晶シリコン電極、７……ｐ＋型層、
８１，８２……ＣＶＤ絶縁膜、９１，９２……Ａｌ電
極、１０……ａ−Ｓｉ：Ｈ膜（光導電膜）、１１……極
薄絶縁膜（ブロッキング層）、１２……透明電極、１３
……ＣＶＤ絶縁膜、１４……ＣＶＤ多結晶シリコン膜、
１５……金属電極。FIG. 1 is a sectional view of an essential part of a stacked solid-state imaging device according to an embodiment of the present invention, FIG. 2 is a diagram showing energy bands of its photoelectric conversion part and signal charge storage part, and FIG. 3 is another embodiment. FIG. 3 is a cross-sectional view of a main part of an example stacked solid-state imaging device. 1 ... p type Si substrate, 2 ... n ++ type layer (signal charge storage diode), 3 ... n + type layer, 4 ... n + type layer (CC
(For D buried channel), 5 1 , 5 2 ... gate insulating film,
6 1 , 6 2 ... Polycrystalline silicon electrode, 7 ... P + type layer,
8 1 , 8 2 ... CVD insulating film, 9 1 , 9 2 ... Al electrode, 10 ... a-Si: H film (photoconductive film), 11 ... Ultra thin insulating film (blocking layer), 12 ... ... Transparent electrode, 13
... CVD insulating film, 14 ... CVD polycrystalline silicon film,
15 ... Metal electrode.
Claims (5)
配列形成された固体撮像素子基板と、この基板上に積層
された光導電膜と、この光導電膜の表面に積層された透
明電極と、前記光導電膜と透明電極の間に積層された絶
縁膜と、前記光導電膜内の余剰電荷を透明電極側に排出
するように、光導電膜と透明電極との間に撮像時とは逆
の電界を印加する手段とを備えたことを特徴とする積層
型固体撮像装置。1. A solid-state imaging device substrate on which a signal charge storage unit and a signal charge reading unit are formed in an array, a photoconductive film laminated on the substrate, and a transparent electrode laminated on the surface of the photoconductive film. , An insulating film laminated between the photoconductive film and the transparent electrode, and between the photoconductive film and the transparent electrode at the time of imaging so that excess charges in the photoconductive film are discharged to the transparent electrode side. A laminated solid-state imaging device, comprising: means for applying an opposite electric field.
ネル電流が流れる極薄絶縁膜である特許請求の範囲第１
項記載の積層型固体撮像装置。2. The insulating film is an extremely thin insulating film through which a tunnel current flows when a predetermined voltage is applied.
The laminated solid-state imaging device according to the item.
り、前記極薄絶縁膜はこのアモルファスＳｉ膜を熱酸化
して得られる酸化膜である特許請求の範囲第２項記載の
積層型固体撮像装置。3. The stacked solid-state imaging device according to claim 2, wherein the photoconductive film is an amorphous Si film, and the ultrathin insulating film is an oxide film obtained by thermally oxidizing the amorphous Si film. apparatus.
部はＣＣＤである特許請求の範囲第１項記載の積層型固
体撮像装置。4. The stacked solid-state image pickup device according to claim 1, wherein the signal charge reading section of the solid-state image pickup device substrate is a CCD.
絶縁膜により分離されている特許請求の範囲第１項記載
の積層型固体撮像装置。5. The stacked solid-state imaging device according to claim 1, wherein the photoconductive film is separated by a buried insulating film for each photosensitive pixel region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60157886A JPH0658951B2 (en) | 1985-07-17 | 1985-07-17 | Stacked solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60157886A JPH0658951B2 (en) | 1985-07-17 | 1985-07-17 | Stacked solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6218757A JPS6218757A (en) | 1987-01-27 |
| JPH0658951B2 true JPH0658951B2 (en) | 1994-08-03 |
Family
ID=15659565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60157886A Expired - Lifetime JPH0658951B2 (en) | 1985-07-17 | 1985-07-17 | Stacked solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0658951B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7312115B2 (en) * | 2017-12-28 | 2023-07-20 | ソニーセミコンダクタソリューションズ株式会社 | Light receiving element and electronic device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5685876A (en) * | 1979-12-14 | 1981-07-13 | Hitachi Ltd | Photoelectric converter |
| JPS5742273A (en) * | 1980-08-27 | 1982-03-09 | Toshiba Corp | Solidstate image sensor |
| JPS5752276A (en) * | 1980-09-12 | 1982-03-27 | Hitachi Ltd | Solid image pickup element |
| JPS59112663A (en) * | 1983-11-18 | 1984-06-29 | Hitachi Ltd | Photodetector device |
-
1985
- 1985-07-17 JP JP60157886A patent/JPH0658951B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6218757A (en) | 1987-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5619049A (en) | CCD-type solid state image pickup with overflow drain structure | |
| US7515187B2 (en) | Photoelectric conversion film-stacked type solid-state imaging device | |
| JPS6157181A (en) | Solid-state image pickup device | |
| US4748486A (en) | Solid-state image sensor | |
| JPH06204450A (en) | Solid-state image pickup device | |
| JPH08250697A (en) | Amplifying type photoelectric converter and amplifying type solid-state image sensor using the same | |
| US5343061A (en) | Solid-state imaging device suppressing dark-current noise | |
| JP3052560B2 (en) | Charge transfer imaging device and method of manufacturing the same | |
| JPH0658951B2 (en) | Stacked solid-state imaging device | |
| CA1241418A (en) | Radiation-sensitive semiconductor device | |
| JP2509592B2 (en) | Stacked solid-state imaging device | |
| JP2506697B2 (en) | Solid-state imaging device | |
| JP2002151673A (en) | Solid-state image pickup element | |
| JPS6320385B2 (en) | ||
| JPH0294567A (en) | Solid-stage image sensing device | |
| JPH05243546A (en) | Solid-state image sensing device | |
| JP2597582B2 (en) | Solid-state imaging device | |
| JP2674524B2 (en) | Solid-state imaging device and driving method thereof | |
| JP2848435B2 (en) | Solid-state imaging device | |
| JPH0316477A (en) | Solid-state image pickup device | |
| JPH0778957A (en) | Solid state image sensor | |
| JPH0322755B2 (en) | ||
| JP2975648B2 (en) | Charge coupled device | |
| JP2523717B2 (en) | Solid-state imaging device | |
| JPS6273663A (en) | Solid-state image pickup device and drive method thereof |