JP2523717B2 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JP2523717B2 JP2523717B2 JP62298449A JP29844987A JP2523717B2 JP 2523717 B2 JP2523717 B2 JP 2523717B2 JP 62298449 A JP62298449 A JP 62298449A JP 29844987 A JP29844987 A JP 29844987A JP 2523717 B2 JP2523717 B2 JP 2523717B2
- Authority
- JP
- Japan
- Prior art keywords
- horizontal
- gate
- solid
- charges
- horizontal transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、光電変換機能をもち、画像の認識が可能な
固体撮像装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a solid-state imaging device having a photoelectric conversion function and capable of recognizing an image.
従来の技術 固体撮像装置は一体型ビデオカメラの撮像部等に広く
実用化されている。とりわけ、インターライン転送方式
の電荷結合型固体撮像素子（以下、IT−CCDと略記す
る）は、その低雑音性による高感度特性のため、注目さ
れている。2. Description of the Related Art Solid-state image pickup devices have been widely put to practical use in the image pickup section of integrated video cameras. In particular, an interline transfer type charge-coupled solid-state image pickup device (hereinafter abbreviated as IT-CCD) has attracted attention because of its high noise sensitivity and high sensitivity.
IT−CCDでは、動解像度特性の優れた電子シャッター
モードが一般にその駆動法として用いられる。電子シャ
ッターモードでは、１サイクル（60分の１秒）の間で、
先に不要電荷を読み出し、その後信号電荷を読み出す。
すなわち、先に読み出した不要電荷は通常垂直転送部，
水平転送部を通して出力部に掃き出し、その後信号電荷
を読み出し同様に出力部から読み出す駆動方式が用いら
れている。In IT-CCD, an electronic shutter mode with excellent dynamic resolution characteristics is generally used as the driving method. In electronic shutter mode, during one cycle (60th of a second),
The unnecessary charges are read first, and then the signal charges are read.
That is, the unnecessary charges read previously are normally transferred to the vertical transfer unit,
A driving method is used in which the signal is discharged to the output unit through the horizontal transfer unit and then the signal charges are read from the output unit as well.
発明が解決しようとする問題点 しかしながら、上記のような従来の固体撮像装置で
は、各行の不要電荷が水平転送部に加算される形となる
ため、不要電荷が水平転送部でオーバーフローし、画像
に白い横線となって表われ、画質を著しく劣化させると
いう欠点を有していた。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in the conventional solid-state imaging device as described above, since the unnecessary charges in each row are added to the horizontal transfer unit, the unnecessary charges overflow in the horizontal transfer unit, and It appeared as a white horizontal line and had a drawback that the image quality was significantly deteriorated.
本発明は上記欠点に鑑み、不要電荷の掃き出しを改善
することのできる固体撮像装置を提供するものである。In view of the above drawbacks, the present invention provides a solid-state imaging device capable of improving the sweeping out of unnecessary charges.
問題点を解決するための手段 本発明の固体撮像装置は、光電変換素子を行列状に配
列した受光部と、同受光部に蓄積された電荷を垂直方向
に転送する垂直転送部と、垂直転送された電荷をさらに
水平方向に転送する水平転送部と、水平転送部に隣接し
た不要電荷を掃き出すドレイン部とを備えたものであ
る。不要電荷を掃き出す動作は水平転送部を制御するゲ
ートにより不要電荷の掃き出しの制御が実行される。こ
れを助ける手段として水平転送部のチャネル領域の不純
物濃度と不要電荷の掃き出しを制御するチャネル領域の
不純物濃度との関係を、水平転送部のチャネル領域のポ
テンシャルが深くなる方向の濃度差に設定した構成であ
る。Means for Solving the Problems A solid-state imaging device according to the present invention includes a light-receiving unit in which photoelectric conversion elements are arranged in a matrix, a vertical transfer unit that vertically transfers charges accumulated in the light-receiving unit, and a vertical transfer unit. A horizontal transfer section for further transferring the generated charges in the horizontal direction and a drain section for sweeping unnecessary charges adjacent to the horizontal transfer section are provided. In the operation of sweeping out unnecessary charges, control of sweeping out unnecessary charges is executed by the gate that controls the horizontal transfer unit. As a means for assisting this, the relationship between the impurity concentration of the channel region of the horizontal transfer portion and the impurity concentration of the channel region that controls the sweeping of unnecessary charges is set to the concentration difference in the direction in which the potential of the channel region of the horizontal transfer portion becomes deep. It is a composition.
作用 この構成によって、オーバーフローした不要電荷は水
平転送部と掃き出しを制御するチャネルとのポテンシャ
ル差を乗り越えてドレイン部に掃き出される。また、不
要電荷は１回の水平転送動作で完全に掃き出せる量なの
で画質を劣化させることもない。さらに信号電荷はポテ
ンシャル差を乗り越えない量なのでドレイン部に吸収さ
れることなく正常に転送できる。Action With this configuration, the unnecessary charges that have overflowed are swept out to the drain section, overcoming the potential difference between the horizontal transfer section and the channel that controls the sweeping out. Further, since the amount of unnecessary charges can be completely swept out by one horizontal transfer operation, the image quality is not deteriorated. Further, since the signal charge is an amount that does not exceed the potential difference, it can be normally transferred without being absorbed by the drain portion.
実施例 以下、本発明の一実施例について、図面を参照しなが
ら説明する。Embodiment One embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の実施例におけるIT−CCD型固体撮像
装置の垂直CCDと水平CCDの接続部の平面図を示すもので
ある。FIG. 1 is a plan view of a connecting portion between a vertical CCD and a horizontal CCD of an IT-CCD type solid-state image pickup device according to an embodiment of the present invention.
第１図において、１は垂直転送を制御する垂直ゲー
ト、２は水平転送と不要電荷の掃き出しを制御する水平
ゲート、３は垂直転送と水平転送および掃き出し用のチ
ャネル領域、４は埋め込みチャネル領域、５は水平転送
ゲート電極、６は掃き出しドレイン電極、８はN+拡散領
域である。In FIG. 1, 1 is a vertical gate for controlling vertical transfer, 2 is a horizontal gate for controlling horizontal transfer and sweeping of unnecessary charges, 3 is a channel region for vertical transfer and horizontal transfer and sweeping, 4 is a buried channel region, Reference numeral 5 is a horizontal transfer gate electrode, 6 is a sweep drain electrode, and 8 is an N + diffusion region.
第２図は第１図のａ−ａ′部の断面図である。 FIG. 2 is a sectional view taken along the line aa 'in FIG.
第３図は第２図に対応するチャネル領域のポテンシャ
ルプロファイル図であり、ＡはN+拡散領域のポテンシャ
ル、Ｂは水平ゲート２の下の表面チャネル領域のポテン
シャル（埋め込みチャネル領域４以外の領域）、Ｃは水
平ゲート２の下の埋め込みチャネル領域４のポテンシャ
ル、Ｄは垂直ゲート１の下の埋め込みチャネル領域４の
ポテンシャルである。この図では、垂直ゲート１には負
の電圧が印加されており、水平ゲート２には正の電圧が
印加されており、掃き出しドレイン電極６には、水平ゲ
ート２に印加されている電圧より高い電圧が印加されて
いる状態を示している。各電圧の関係は次のようになっ
ている。FIG. 3 is a potential profile diagram of the channel region corresponding to FIG. 2, where A is the potential of the N + diffusion region and B is the potential of the surface channel region under the horizontal gate 2 (regions other than the buried channel region 4). , C is the potential of the buried channel region 4 under the horizontal gate 2, and D is the potential of the buried channel region 4 under the vertical gate 1. In this figure, a negative voltage is applied to the vertical gate 1, a positive voltage is applied to the horizontal gate 2, and the sweep drain electrode 6 is higher than the voltage applied to the horizontal gate 2. The state where the voltage is applied is shown. The relationship of each voltage is as follows.
VD＞VHG＞VVG ここで、 HD:掃き出しドレイン電極の電圧 VHG:水平ゲート２の電圧 VVG:垂直ゲート１の電圧 まず、不要電荷が読み出され、垂直ゲート１により垂
直転送される。次に、この不要電荷は第３図のＣ領域に
転送される。なお、不要電荷は各行から垂直転送されて
Ｃの領域に加算されて蓄積される。そして、この不要電
荷の量がＢの領域の電位を越える量になると、その越え
た量の不要電荷はＢの領域を通ってN+拡散層８（掃き出
しドレイン部）に掃き出される。次に、信号電荷が読み
出され、垂直ゲート１により垂直転送され、ついで、こ
の信号電荷は第３図のＣ領域に転送される。そして、こ
の信号電荷は水平ゲート２により水平方向に転送され、
順次出力される。この時、信号電荷はＢの領域を越える
ことなく出力される。V D ＞ V HG ＞ V VG Where, H D : Sweep drain electrode voltage V HG : Horizontal gate 2 voltage V VG : Vertical gate 1 voltage First, unnecessary charges are read out and vertical transfer is performed by vertical gate 1. To be done. Next, the unnecessary charges are transferred to the area C in FIG. The unnecessary charges are vertically transferred from each row and added and accumulated in the area C. When the amount of the unnecessary charges exceeds the potential of the B region, the excess amount of the unnecessary charges is swept out to the N + diffusion layer 8 (sweep drain part) through the B region. Next, the signal charge is read out and vertically transferred by the vertical gate 1, and then this signal charge is transferred to the area C in FIG. Then, this signal charge is transferred in the horizontal direction by the horizontal gate 2,
It is output sequentially. At this time, the signal charges are output without exceeding the area B.
以上のように本実施例によれば、水平ゲートの端にド
レイン部を設け、水平転送チャネル部は埋め込みチャネ
ル構成とし、掃き出し用チャネル部は表面チャネル構成
にすることにより、埋め込みチャネルの取り扱い電荷量
以上の不要電荷はすべてドレイン部に掃き出すことがで
きる。また、信号電荷は埋め込みチャネルの取り扱い電
荷量以下であるので、ドレイン部に吸収されることなく
転送することができる。As described above, according to the present embodiment, the drain portion is provided at the end of the horizontal gate, the horizontal transfer channel portion has a buried channel structure, and the sweep-out channel portion has a surface channel structure. All the above unnecessary charges can be swept out to the drain part. Further, since the signal charge is less than the charge amount handled by the buried channel, it can be transferred without being absorbed by the drain portion.
発明の効果 以上のように本発明は、水平転送部に隣接して掃き出
しドレイン部を設け、その制御ゲートは水平転送ゲート
を兼用した構成になっているので、簡単な構成で不要電
荷の掃き出しができ、その実用的効果は大である。EFFECTS OF THE INVENTION As described above, according to the present invention, the sweep drain portion is provided adjacent to the horizontal transfer portion, and the control gate thereof also serves as the horizontal transfer gate. It is possible and its practical effect is great.
第１図は本発明の実施例における固体撮像装置の垂直転
送部と水平転送部との結合部の要部平面図、第２図は第
１図のａ−ａ′部の断面図、第３図は同断面のポテンシ
ャルプロファィル図である。 １……垂直ゲート、２……水平ゲート、３……チャネル
領域、４……埋め込みチャネル領域、５……水平転送ゲ
ート、６……掃き出しドレイン部、７……絶縁層、８…
…N+拡散領域、９……Ｐ型基板。FIG. 1 is a plan view of an essential part of a connecting portion of a vertical transfer portion and a horizontal transfer portion of a solid-state image pickup device according to an embodiment of the present invention, and FIG. The figure is a potential profile diagram of the same section. 1 ... vertical gate, 2 ... horizontal gate, 3 ... channel region, 4 ... buried channel region, 5 ... horizontal transfer gate, 6 ... sweep drain part, 7 ... insulating layer, 8 ...
... N + diffusion region, 9 ... P-type substrate.
Claims (1)
と、前記受光部に蓄積された電荷を垂直方向に転送する
垂直転送部と、前記垂直転送部の電荷を水平方向に転送
する水平転送部と、前記水平転送部に隣接して配設さ
れ、前記水平転送部を制御するゲートで前記水平転送部
に結合された、不要電荷を掃き出すドレイン部とを備え
た固体撮像装置。1. A light receiving section in which photoelectric conversion elements are arranged in a matrix, a vertical transfer section for vertically transferring the charges accumulated in the light receiving section, and a horizontal for transferring the charges of the vertical transfer section in the horizontal direction. A solid-state imaging device comprising: a transfer unit; and a drain unit, which is disposed adjacent to the horizontal transfer unit and is coupled to the horizontal transfer unit by a gate that controls the horizontal transfer unit, for sweeping unnecessary charges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62298449A JP2523717B2 (en) | 1987-11-26 | 1987-11-26 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62298449A JP2523717B2 (en) | 1987-11-26 | 1987-11-26 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01140660A JPH01140660A (en) | 1989-06-01 |
| JP2523717B2 true JP2523717B2 (en) | 1996-08-14 |
Family
ID=17859854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62298449A Expired - Lifetime JP2523717B2 (en) | 1987-11-26 | 1987-11-26 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2523717B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5930378A (en) * | 1982-08-12 | 1984-02-17 | Canon Inc | Image pickup device |
| JPS6194466A (en) * | 1984-10-15 | 1986-05-13 | Nec Corp | Solid-state image pickup element |
| JP2554621B2 (en) * | 1985-12-26 | 1996-11-13 | 日本電気株式会社 | Solid-state imaging device |
-
1987
- 1987-11-26 JP JP62298449A patent/JP2523717B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01140660A (en) | 1989-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
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