JPS6194466A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPS6194466A JPS6194466A JP59215880A JP21588084A JPS6194466A JP S6194466 A JPS6194466 A JP S6194466A JP 59215880 A JP59215880 A JP 59215880A JP 21588084 A JP21588084 A JP 21588084A JP S6194466 A JPS6194466 A JP S6194466A
- Authority
- JP
- Japan
- Prior art keywords
- section
- transferring section
- solid
- gate
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 4
- 241000772415 Neovison vison Species 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は例えばテレヒジョンカメラ装置に用いられ、
少くとも光電変換部と、水平転送部と、信号出力部とか
らなる固体撮像素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention can be used, for example, in a telephoto camera device,
The present invention relates to a solid-state image sensor including at least a photoelectric conversion section, a horizontal transfer section, and a signal output section.
「従来の技術」
従来この種の固体撮像素子は第４図に示す様に光電変換
部１が図において縦に配列されたものが並らべられ、そ
の光電変換部１の各縦配列と近接平行して垂直転送部２
がそれぞれ形成され、その垂直転送部２の各一端に接近
して水平転送部３が形成され、その一端は信号出力部５
とされている。``Prior Art'' Conventionally, in this type of solid-state imaging device, photoelectric conversion units 1 are arranged vertically in the figure as shown in FIG. Vertical transfer section 2 in parallel
are formed respectively, and a horizontal transfer section 3 is formed close to each end of the vertical transfer section 2, one end of which is connected to a signal output section 5.
It is said that
これはインターライン転送方式であり、光電変換部１に
入射した光の光量に応じて信号電荷が形成され、トラン
スファーゲート（図示せず）を介して垂直転送部２に読
み出される。垂直転送部２の全電荷パターンは行単位で
水平転送部３に転送され信号出力部５よりビデオ信号と
して出力される。This is an interline transfer method, in which signal charges are formed according to the amount of light incident on the photoelectric conversion section 1, and are read out to the vertical transfer section 2 via a transfer gate (not shown). The entire charge pattern of the vertical transfer section 2 is transferred row by row to the horizontal transfer section 3 and outputted from the signal output section 5 as a video signal.
第５図はフレーム転送方式を用いた従来の固体撮像素子
を示す。複数の光電変換素子が配列された光電変換部１
の一端にそれぞれ蓄積部４が延長して形成され、その各
蓄積部４の他端と近接して水平転送部３が共通に設けら
れる。光電変換部１て生じた信号電荷は、垂直フランキ
ンク期間内に蓄積部４に転送され、蓄積部４の全電荷パ
ターンは行単位で１水平走査線毎に水平転送部３に転送
され、信号出力部５よりビデオ信号として出力される。FIG. 5 shows a conventional solid-state image sensor using a frame transfer method. Photoelectric conversion unit 1 in which a plurality of photoelectric conversion elements are arranged
A storage section 4 is extended and formed at one end of each storage section 4, and a horizontal transfer section 3 is commonly provided adjacent to the other end of each storage section 4. The signal charge generated in the photoelectric conversion unit 1 is transferred to the storage unit 4 within the vertical flank period, and the entire charge pattern in the storage unit 4 is transferred row by row to the horizontal transfer unit 3 for each horizontal scanning line, and the signal charge is output. The signal is outputted from section 5 as a video signal.
固体撮像素子は撮像管に比べ低雑音、低残像。Solid-state image sensors have lower noise and less afterimage compared to image pickup tubes.
焼き付き等では優れており、現在ではフルーミンク、ス
ミアといった固体撮像素子特有の過剰電荷による現象も
抑制もしくは除去されつつある。It is excellent in terms of burn-in, etc., and phenomena such as flue mink and smear caused by excess charge peculiar to solid-state image sensors are now being suppressed or eliminated.
「発明が解決しようとする問題点」
しかし、従来の固体撮像素子では最大出力電荷量を制御
することが困難であったため、テレヒジョンカメラ装置
として使用する場合、クランプ回路、ホワイトクリップ
ｄ路等の複雑で高価な回路をテレビジョンカメラ装置側
に装備しなければならないという欠点があった。``Problems to be Solved by the Invention'' However, since it is difficult to control the maximum output charge amount with conventional solid-state image sensors, when used as a telephoto camera device, clamp circuits, white clip d-paths, etc. The drawback is that a complicated and expensive circuit must be installed on the television camera device side.
この発明の目的は固体撮像素子の水平転送部に隣接して
垂直転送部とは反対側に少なくとも１個以上のゲートを
有するオーバーフロードレインを設け、各ゲートに印加
する電圧を変えることにより、垂直転送部から水平転送
部に転送される際の最大信号電荷量を制御できる固体撮
像素子を提供するものである。An object of the present invention is to provide an overflow drain having at least one or more gates adjacent to the horizontal transfer section of a solid-state image sensor on the opposite side from the vertical transfer section, and to transfer the vertical transfer by changing the voltage applied to each gate. An object of the present invention is to provide a solid-state image sensor that can control the maximum amount of signal charge when transferred from a horizontal transfer section to a horizontal transfer section.
「問題点を解決するための手段」
この発明によれば、光電変換部と垂直転送部と水平転送
部と信号出力部とから成る固体撮像素子において、前記
水平転送部に隣接して垂直転送部とは反対側に、少なく
とも１個以上のゲートを有するオーバーフロードレイン
を設け、各ケー１−・こ印加する電圧により最大出力信
号電荷量を制御することが出来るようにされる。"Means for Solving the Problem" According to the present invention, in a solid-state imaging device comprising a photoelectric conversion section, a vertical transfer section, a horizontal transfer section, and a signal output section, a vertical transfer section is provided adjacent to the horizontal transfer section. An overflow drain having at least one gate is provided on the opposite side, and the maximum output signal charge amount can be controlled by the voltage applied to each case.
「実施例」 次にこの発明の実施例を図を参照して詳細に説明する。"Example" Next, embodiments of the present invention will be described in detail with reference to the drawings.
第１図乃至第３図はこの発明の実施例を示し、インター
ライン転送方式を用いた固体撮像素子に対してこの発明
を適用した場合である。1 to 3 show embodiments of the present invention, in which the present invention is applied to a solid-state image sensor using an interline transfer method.
第１図に示すように第４図と同様に、光電変換部１の配
列、これと隣接した垂直転送部２．垂直転送部２の一端
に接近した共通の水平転送部３゜信号出力部５を備えて
いる。As shown in FIG. 1, similar to FIG. 4, the photoelectric conversion sections 1 are arranged, and the vertical transfer sections 2 adjacent thereto. A common horizontal transfer section 3 is provided with a signal output section 5 close to one end of the vertical transfer section 2.
この実施例では水平転送部３の垂直転送部２と反対側に
各垂直転送部２と対応してオーバーフロードレイン６が
設けられ、これらオーバーフロートレイン６上に共通に
１個のゲート７が延長して形成される。オーバーフロー
ドレイン６のゲート７に対し水平転送部３と反対側は互
に接続されている。In this embodiment, an overflow drain 6 is provided on the opposite side of the horizontal transfer section 3 from the vertical transfer section 2 in correspondence with each vertical transfer section 2, and a single gate 7 extends commonly over these overflow trains 6. It is formed. The side of the overflow drain 6 opposite to the horizontal transfer section 3 with respect to the gate 7 is connected to each other.
光電変換部ｌに入射した光は光量に応じてトランスファ
ゲート（図示せず）を介して垂直転送部２に読み出され
、垂直転送部２の信号電荷量は順次行単位で水平転送部
３に転送される。この垂直転送部２から水平転送部３に
各信号電荷量がシフトされる時に、オーバーフロードレ
イン６のゲート７に電圧を印加することによりゲート７
をＯＮさせ、不安な信号電荷量を隣接して設置したオー
バーフロードレイン６を通して排除する。この様な操作
を全ての垂直転送部２から水平転送部３に転送される信
号電荷量に対して施すことにより、ケー１−７に印加す
る電圧を変えることにより固体撮像素子からの最大出力
信号電荷量を全画素共通のレベルに制御することが出来
る。The light incident on the photoelectric conversion section l is read out to the vertical transfer section 2 via a transfer gate (not shown) according to the amount of light, and the signal charge amount of the vertical transfer section 2 is sequentially transferred row by row to the horizontal transfer section 3. be transferred. When each signal charge amount is shifted from the vertical transfer section 2 to the horizontal transfer section 3, by applying a voltage to the gate 7 of the overflow drain 6, the gate 7
is turned ON, and the unstable signal charge amount is removed through the overflow drain 6 installed adjacently. By performing such an operation on the amount of signal charge transferred from all the vertical transfer sections 2 to the horizontal transfer section 3, the maximum output signal from the solid-state image sensor can be adjusted by changing the voltage applied to the case 1-7. The amount of charge can be controlled to a level common to all pixels.
第２図はこの発明の第２の実施例を示す。第２図中の光
電変換部１上には第６図に示すように行方向には１画素
（１光電変換部）ごとに赤信号用の色フイルタ−Ｒと青
信号用の色フイルタ−Ｂとが交互に繰返して設けられ、
列方向に対しては赤または青の同一色の色フィルターが
設けられている。また第・２図に示すようにオーバーフ
ロードレイン６の１本おきにゲート７とゲート８とが交
互ｌこ設けられゲート７は配線１０で互に接続され、ゲ
ート８は他の配線１０て互に接続される。FIG. 2 shows a second embodiment of the invention. As shown in FIG. 6, on the photoelectric conversion section 1 in FIG. are provided alternately and repeatedly,
Color filters of the same red or blue color are provided in the column direction. Further, as shown in FIG. 2, gates 7 and 8 are provided alternately for every other overflow drain 6, the gates 7 are connected to each other by a wiring 10, and the gates 8 are connected to each other by another wiring 10. Connected.
この実施例の動作は基本的には第１図に示した実施例と
同様であり、各ゲートに印加する電圧を変えることによ
り固体撮像素子からの赤信号及び青信号の最大出力信号
電荷量をそれぞれ制御出来る。The operation of this embodiment is basically the same as that of the embodiment shown in FIG. It can be controlled.
第３図はこの発明の第３の実施例を示す。第３図の光電
変換部１上に第７図に示す様に行方向には１画素ごとに
赤信号用の色フイルタ−Ｒと青信号用の色フイルタ−Ｂ
と緑信号用の色フイルタ−Ｇとが順次交互に繰返され、
列方向に対しては赤。FIG. 3 shows a third embodiment of the invention. As shown in FIG. 7, on the photoelectric conversion unit 1 in FIG.
and the color filter G for the green signal are sequentially and alternately repeated.
Red for column direction.
青または縁色の同一色の色フィルターを用いているもの
とする。第３図に示すようにオーバーフロートレイン６
は２本置きに接続された３綜ゲート７．８．９を順次１
本ずつずらして設ける。この実施例の動作も第１の実施
例と同様であり、各ゲートに印加する電圧を変えること
により、固体撮像素子からの赤信号、青信号及び緑信号
の最大出力信号電荷量をそれぞれ制御出来る。またこの
実施例において、赤、青及び緑信号用の色フィルターが
モサイク状のものであっても各ゲート７．８，９にそれ
ぞれパルス電圧を印加することにより、固体撮像素子か
らの赤信号、青信号及び緑信号の最大出力信号電荷量を
それぞれ制御出来る。A color filter of the same color as blue or border color shall be used. Overflow train 6 as shown in Figure 3
The 3-hedral gates 7.8.9 connected to every other 2 gates are sequentially
Arrange the books one by one. The operation of this embodiment is also similar to that of the first embodiment, and by changing the voltage applied to each gate, the maximum output signal charge amount of the red signal, blue signal, and green signal from the solid-state image sensor can be controlled. In this embodiment, even if the color filters for red, blue, and green signals are mosaic-like, by applying pulse voltages to each gate 7, 8, and 9, the red signal from the solid-state image sensor, The maximum output signal charge amount of the blue signal and green signal can be controlled respectively.
この発明は第５図に示したフレーム転送方式による固体
撮像素子についても同様にして適用出来る。The present invention can be similarly applied to the solid-state imaging device using the frame transfer method shown in FIG.
「発明の効果」
この発明は以上説明した様に従来の固体撮像素子に少な
くとも１個以上のゲートを有するオーバーフロードレイ
ンを構成することにより最大出力電荷量の制御を可能と
し、小型テレビジョンカメラ装置に使用してカメラ側の
ホワイトクリップ回路、クラ／プ回路示不必要となる効
果がある。"Effects of the Invention" As explained above, the present invention makes it possible to control the maximum output charge amount by configuring a conventional solid-state image sensor with an overflow drain having at least one gate, and is suitable for small-sized television camera devices. This has the effect of making it unnecessary to display the white clip circuit or clamp circuit on the camera side.
第１図乃至第３図はそれぞれこの発明の実施例を示す図
、第４図は従来のインターライン方式の固体撮像素子を
示す図、第５図は従来のフレーム転送方式の固体撮像素
子を示す図、第６図及び第７図はそれぞれ色フィルター
の構成を示す図である。
１：光電変換部、２：垂直転送部、３：水平転送部、４
：蓄積部、５：信号出力部、６：オーバーフロードレイ
ン、７，８．９ ：ゲート、１０：配線アルミ、Ｒ：赤
色フィルター、Ｇ：緑色フィルター、Ｂ：青色フィルタ
ー。1 to 3 each show an embodiment of the present invention, FIG. 4 shows a conventional interline type solid-state image pickup device, and FIG. 5 shows a conventional frame transfer type solid-state image pickup device. 6 and 7 are diagrams each showing the configuration of a color filter. 1: Photoelectric conversion section, 2: Vertical transfer section, 3: Horizontal transfer section, 4
: Storage section, 5: Signal output section, 6: Overflow drain, 7, 8.9: Gate, 10: Aluminum wiring, R: Red filter, G: Green filter, B: Blue filter.
Claims (1)
平転送部と、信号出力部から成る固体撮像素子において
、前記水平転送部に隣接して光電変換部とは反対側に少
なくとも１個以上のゲートを有するオーバーフロードレ
インが設けられ、前記ゲートに印加する電圧を制御する
ことにより各光電変換素子からの最大出力信号電荷量を
制御することができる固体撮像素子。(1) In a solid-state imaging device consisting of a photoelectric conversion section consisting of a plurality of photoelectric conversion elements, a horizontal transfer section, and a signal output section, at least one photoelectric conversion section is provided adjacent to the horizontal transfer section on the opposite side from the photoelectric conversion section. A solid-state imaging device that is provided with an overflow drain having the gate as described above, and can control the maximum output signal charge amount from each photoelectric conversion element by controlling the voltage applied to the gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59215880A JPS6194466A (en) | 1984-10-15 | 1984-10-15 | Solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59215880A JPS6194466A (en) | 1984-10-15 | 1984-10-15 | Solid-state image pickup element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6194466A true JPS6194466A (en) | 1986-05-13 |
Family
ID=16679784
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59215880A Pending JPS6194466A (en) | 1984-10-15 | 1984-10-15 | Solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6194466A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140660A (en) * | 1987-11-26 | 1989-06-01 | Matsushita Electron Corp | Solid state image sensing device |
| JPH01226283A (en) * | 1988-03-04 | 1989-09-08 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
| US5326997A (en) * | 1992-06-18 | 1994-07-05 | Mitsubishi Denki Kabushiki Kaisha | Linear image sensor with shutter gates for draining excess charge |
| USRE36812E (en) * | 1989-08-08 | 2000-08-08 | Asahi Kogaku Kogyo Kabushiki Kaisha | Driving apparatus of image pick-up device for preventing leakage of accumulated electrical charges |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53100725A (en) * | 1977-02-15 | 1978-09-02 | Sony Corp | Solid pickup device |
| JPS5930378A (en) * | 1982-08-12 | 1984-02-17 | Canon Inc | Image pickup device |
-
1984
- 1984-10-15 JP JP59215880A patent/JPS6194466A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53100725A (en) * | 1977-02-15 | 1978-09-02 | Sony Corp | Solid pickup device |
| JPS5930378A (en) * | 1982-08-12 | 1984-02-17 | Canon Inc | Image pickup device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140660A (en) * | 1987-11-26 | 1989-06-01 | Matsushita Electron Corp | Solid state image sensing device |
| JPH01226283A (en) * | 1988-03-04 | 1989-09-08 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
| USRE36812E (en) * | 1989-08-08 | 2000-08-08 | Asahi Kogaku Kogyo Kabushiki Kaisha | Driving apparatus of image pick-up device for preventing leakage of accumulated electrical charges |
| US5326997A (en) * | 1992-06-18 | 1994-07-05 | Mitsubishi Denki Kabushiki Kaisha | Linear image sensor with shutter gates for draining excess charge |
| US5483282A (en) * | 1992-06-18 | 1996-01-09 | Mitsubishi Denki Kabushiki Kaisha | Method for driving a linear image sensor |
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