JP2506697B2 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JP2506697B2 JP2506697B2 JP61291092A JP29109286A JP2506697B2 JP 2506697 B2 JP2506697 B2 JP 2506697B2 JP 61291092 A JP61291092 A JP 61291092A JP 29109286 A JP29109286 A JP 29109286A JP 2506697 B2 JP2506697 B2 JP 2506697B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- light
- ccd
- conversion element
- shielding film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title description 7
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 description 12
- 238000001444 catalytic combustion detection Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 101100115215 Caenorhabditis elegans cul-2 gene Proteins 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は固体撮像装置に関するものである。TECHNICAL FIELD The present invention relates to a solid-state imaging device.
従来の技術 近年、固体撮像装置の開発が進み、性能の点から見て
撮像管に匹敵ないし、上回るものがある。そのなかでも
インターライン転送方式CCD固体撮像装置（以下IT-CCD
と略記）は特に優れた特性を持っており実用化されてい
る。2. Description of the Related Art In recent years, the development of solid-state imaging devices has progressed, and some of them are comparable or superior to imaging tubes in terms of performance. Among them, interline transfer type CCD solid-state imaging device (hereinafter IT-CCD
Abbreviations) have particularly excellent properties and have been put to practical use.
以下、図面を参照しながら従来のIT-CCDの構成につい
て説明する。Hereinafter, the configuration of the conventional IT-CCD will be described with reference to the drawings.
第２図はIT-CCDの全体構成図である。第２図におい
て、１は光電変換素子、２は光電変換素子１に蓄積され
た信号電荷を転送する垂直転送CCD（以下V-CCDと略
記）、３はV-CCD2により転送された信号電荷を水平方向
に転送する水平転送CCD、４は水平転送CCD3により転送
された信号電荷を検知する電荷検知部である。FIG. 2 is an overall configuration diagram of IT-CCD. In FIG. 2, 1 is a photoelectric conversion element, 2 is a vertical transfer CCD (hereinafter abbreviated as V-CCD) that transfers the signal charge accumulated in the photoelectric conversion element 1, and 3 is the signal charge transferred by the V-CCD2. Horizontal transfer CCDs 4 and 4 for transferring in the horizontal direction are charge detectors for detecting the signal charges transferred by the horizontal transfer CCD 3.
第３図は第２図中のA-B線での断面図である。５は光
電変換素子１とV-CCD2とのｐ形分離領域、６はV-CCDの
チャネル領域、７は半導体基板、８は光電変換素子のｎ
形領域、９は光電変換素子表面のｐ形領域、10は、ポリ
シリコンゲート電極、11はアルミの遮光膜、12は層間絶
縁及びパッシベーション用の絶縁層、13は光電変換によ
り発生した信号電荷である。遮光膜の間げきを通り、半
導体中に入射した光は光電変換により信号電荷となる電
子13を発生させる。発生した電子の大部分は光電変換素
子のｎ形領域８に蓄えられた後、ポリシリコンゲート10
に加えられた電圧により、V-CCDのチャネル領域６に読
み出される。FIG. 3 is a sectional view taken along line AB in FIG. Reference numeral 5 is a p-type isolation region between the photoelectric conversion element 1 and the V-CCD 2, 6 is a V-CCD channel region, 7 is a semiconductor substrate, and 8 is a photoelectric conversion element n.
Shaped region, 9 is a p-type region on the surface of the photoelectric conversion element, 10 is a polysilicon gate electrode, 11 is a light-shielding film of aluminum, 12 is an insulating layer for interlayer insulation and passivation, and 13 is a signal charge generated by photoelectric conversion. is there. The light that has passed through the gap between the light-shielding films and is incident on the semiconductor generates electrons 13 that become signal charges by photoelectric conversion. Most of the generated electrons are stored in the n-type region 8 of the photoelectric conversion element, and then the polysilicon gate 10
The voltage applied to the V-CCD causes the channel region 6 of the V-CCD to be read.
発明が解決しようとする問題点 しかしながら上記のような構成では、遮光膜11が半導
体表面から浮いているために、遮光膜11の間げきから入
射した斜め光の一部が、V-CCDのチャネル領域６に入射
して、偽の信号（以下スミア信号と記入）を発生すると
いう欠点を有していた。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention However, in the above-described configuration, since the light-shielding film 11 floats from the semiconductor surface, a part of the oblique light incident from the gap between the light-shielding film 11 is generated by the V-CCD channel. It has a drawback that it is incident on the area 6 and generates a false signal (hereinafter referred to as a smear signal).
本発明は上記欠点に鑑み、遮光膜の間げきから、V-CC
Dチャネルへの光の入射を防ぎ、スミア信号の発生を抑
制した固体撮像装置を提供するものである。In view of the above-mentioned drawbacks, the present invention provides a V-CC
The present invention provides a solid-state imaging device that prevents light from entering the D channel and suppresses smear signal generation.
問題点を解決するための手段 上記問題点を解決するために、本発明の固体撮像装置
は、一列に並べられた複数の光電変換素子と前記光電変
換素子で発生した信号電荷を転送する電荷転送部とを一
対にして、列状に複数配置するとともに、前記電荷転送
部上を遮光膜で被い、前記遮光膜の列両側端部を、前記
電荷転送部の両側に隣接する前記光電変換素子の各々の
表面領域上にまで延在させて、前記表面領域の縁に接触
させて、前記光電変換素子の端縁部に被せて設けたもの
である。Means for Solving the Problems In order to solve the above problems, the solid-state imaging device of the present invention provides a plurality of photoelectric conversion elements arranged in a line and charge transfer for transferring signal charges generated in the photoelectric conversion elements. And a plurality of sections are arranged in a row and the charge transfer section is covered with a light-shielding film, and both ends of the light-shielding film are adjacent to both sides of the charge transfer section. Of the photoelectric conversion element is extended so as to extend over each surface region, contact the edge of the surface region, and cover the edge portion of the photoelectric conversion element.
作用 この構成によって、遮光膜と半導体表面が接触され、
従来の遮光膜と半導体表面のすき間から、V-CCDチャネ
ルに入射していた斜め光を遮断することとなる。したが
って、斜め光の光電変換により発生するスミア信号を極
端に少なくすることができる。Action With this configuration, the light shielding film and the semiconductor surface are brought into contact with each other,
The oblique light incident on the V-CCD channel is blocked from the gap between the conventional light-shielding film and the semiconductor surface. Therefore, the smear signal generated by photoelectric conversion of oblique light can be extremely reduced.
実施例 以下、本発明の一実施例について、図面を参照しなが
ら説明する。Embodiment One embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例における固体撮像装置の光
電変換素子とV-CCD領域の断面図である。半導体基板７
と同電位のアルミの遮光膜11は光電変換素子のｐ形領域
９に直接的に接触している。この構成により、従来、遮
光膜11と半導体表面のすき間から、V-CCDチャネル６に
入射していた斜め光は、半導体表面のｐ形領域と接触し
ている遮光膜11に反射され、光電変換素子内に入射し光
電変換される。したがって、入射した斜め光は直接V-CC
Dチャネル６に入射しなくなり、スミア信号を極端に少
なくすることができる。なお、本実施例はｐ形半導体基
板上に形成された光電変換素子と転送部の例であるがｎ
形半導体基板上に形成されたｐ形半導体層の中に光電変
換素子と転送部を形成した場合も、まったく同様の効果
がある。FIG. 1 is a sectional view of a photoelectric conversion element and a V-CCD region of a solid-state image pickup device according to an embodiment of the present invention. Semiconductor substrate 7
The light-shielding film 11 made of aluminum having the same potential as is in direct contact with the p-type region 9 of the photoelectric conversion element. With this configuration, oblique light that has hitherto been incident on the V-CCD channel 6 through the gap between the light-shielding film 11 and the semiconductor surface is reflected by the light-shielding film 11 in contact with the p-type region on the semiconductor surface, and photoelectric conversion is performed. The light enters the device and is photoelectrically converted. Therefore, the incident oblique light is directly V-CC
It is not incident on the D channel 6, and the smear signal can be extremely reduced. Although the present embodiment is an example of the photoelectric conversion element and the transfer section formed on the p-type semiconductor substrate, n
Even when the photoelectric conversion element and the transfer section are formed in the p-type semiconductor layer formed on the p-type semiconductor substrate, the same effect is obtained.
発明の効果 以上のように、本発明は、遮光膜を光電変換素子表面
に接触させることにより、V-CCDチャネルに入射する光
を減らし、スミア信号を極端に少なくでき、その実用的
効果は大なるものがある。As described above, according to the present invention, by bringing the light-shielding film into contact with the surface of the photoelectric conversion element, the light incident on the V-CCD channel can be reduced and the smear signal can be extremely reduced, and its practical effect is large. There is something.
第１図は本発明の一実施例における固体撮像装置の光電
変換素子とV-CCD領域の断面図、第２図は従来のIT-CCD
の全体構成図、第３図は第２図のIT-CCDの断面図であ
る。 １……光電変換素子、２……垂直転送CCD（V-CCD）、３
……水平転送CCD（HCCD）、４……電荷検知部、５……
ｐ形分離領域、６……V-CCDのチャネル、７……半導体
基板、８……光電変換素子のｎ形領域、９……光電変換
素子表面のｐ形領域、10……ポリシリコンゲート電極、
11……アルミの遮光膜、12……絶縁層、13……信号電
荷。FIG. 1 is a sectional view of a photoelectric conversion element and a V-CCD area of a solid-state image pickup device according to an embodiment of the present invention, and FIG. 2 is a conventional IT-CCD.
FIG. 3 is a sectional view of the IT-CCD shown in FIG. 1 ... Photoelectric conversion element, 2 ... Vertical transfer CCD (V-CCD), 3
...... Horizontal transfer CCD (HCCD), 4 ... Charge detector, 5 ...
p-type isolation region, 6 ... V-CCD channel, 7 ... semiconductor substrate, 8 ... n-type region of photoelectric conversion element, 9 ... p-type region on photoelectric conversion element surface, 10 ... polysilicon gate electrode ,
11 …… Aluminum light-shielding film, 12 …… Insulating layer, 13 …… Signal charge.
フロントページの続き (56)参考文献 特開 昭58−66471（ＪＰ，Ａ) 特開 昭61−265865（ＪＰ，Ａ) 特開 昭59−129463（ＪＰ，Ａ) 特開 昭62−206878（ＪＰ，Ａ)Continuation of the front page (56) Reference JP 58-66471 (JP, A) JP 61-265865 (JP, A) JP 59-129463 (JP, A) JP 62-206878 (JP , A)
Claims (1)
記光電変換素子で発生した信号電荷を転送する電荷転送
部とを一対にして、列状に複数配置するとともに、前記
電荷転送部上を遮光膜で被い、前記遮光膜の列両側端部
を、前記電荷転送部の両側に隣接する前記光電変換素子
の各々の表面領域上にまで延在させて、前記表面領域の
縁に接触させて、前記光電変換素子の端縁部に被せて設
けたことを特徴とする固体撮像装置。1. A plurality of photoelectric conversion elements arranged in a line and a charge transfer section for transferring a signal charge generated in the photoelectric conversion element are paired and arranged in a plurality of rows, and on the charge transfer section. Is covered with a light-shielding film, and both side ends of the column of the light-shielding film are extended to the surface regions of the photoelectric conversion elements adjacent to both sides of the charge transfer unit to contact the edge of the surface region. The solid-state image pickup device is provided so as to cover the edge portion of the photoelectric conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291092A JP2506697B2 (en) | 1986-12-05 | 1986-12-05 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61291092A JP2506697B2 (en) | 1986-12-05 | 1986-12-05 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63142859A JPS63142859A (en) | 1988-06-15 |
| JP2506697B2 true JP2506697B2 (en) | 1996-06-12 |
Family
ID=17764341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61291092A Expired - Lifetime JP2506697B2 (en) | 1986-12-05 | 1986-12-05 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2506697B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01152663A (en) * | 1987-12-09 | 1989-06-15 | Oki Electric Ind Co Ltd | Solid-state image sensor |
| JPH0360159A (en) * | 1989-07-28 | 1991-03-15 | Nec Corp | Solid-state image sensing device |
| JP2575907B2 (en) * | 1989-12-28 | 1997-01-29 | 株式会社東芝 | Solid-state imaging device and method of manufacturing the same |
| KR970007711B1 (en) * | 1993-05-18 | 1997-05-15 | 삼성전자 주식회사 | Charge-coupled device type solid state image pick-up device with over-flow drain structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5866471A (en) * | 1981-10-16 | 1983-04-20 | Nec Corp | Solid-state image pickup element |
| JPS61265865A (en) * | 1985-05-20 | 1986-11-25 | Nec Corp | Solid-state image pickup element |
-
1986
- 1986-12-05 JP JP61291092A patent/JP2506697B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63142859A (en) | 1988-06-15 |
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