JPH065777B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention provides high productivity during manufacturing, has stable performance against variations in manufacturing conditions, and expands the effective area. The present invention relates to a possible semiconductor device and a manufacturing method thereof.

[Conventional technology]

BACKGROUND ART Conventionally, a semiconductor device is manufactured by removing a part of a semiconductor formed on an electrode by irradiation with an energy beam and further forming an electrode on the semiconductor.

When a part of the semiconductor is removed by irradiation with the energy beam, the removed region is continuously formed in a straight line from the substrate end face to the other end face, and the similarly removed regions are repeatedly formed at certain intervals. There are many cases. By forming electrodes on this semiconductor and patterning them, solar cells connected in series or in series-parallel can be obtained.

The energy beam used to remove a portion of the semiconductor is usually pulsed and also the substrate, for example X-
It is installed on a Y table and moved at a predetermined speed to remove the semiconductor. At that time, pulse energy
The XY table advances by a distance d determined by the table moving speed and the pulse frequency between irradiation of the beam and irradiation of the next pulse energy beam. Assuming that the distance from the center position of the shape of the irradiation surface of the energy beam to the peripheral portion of the removed portion in the traveling direction of the table is A, the beam by the next pulse and the beam by the previous pulse usually have some overlap. Thus, that is, d <2A. Generally, the overlapping area is 10 ~
20% or more.

[Problems to be solved by the invention]

In order to remove the semiconductor as described above, it is necessary to determine the table moving speed and the pulse frequency so that d <2A. However, changing the pulse frequency also changes the nature of the energy beam, and thus there is an appropriate frequency range. Therefore, the table moving speed is restricted, and it becomes difficult to increase the table moving speed and significantly improve the productivity.

Also, if there is a slight change in the table moving speed or pulse frequency, if there is a change in the semiconductor reflectivity or film thickness, or if there is a change in the energy beam itself, etc. The way semiconductors are removed is different.

If the above-mentioned fluctuations act to increase the area where the beams overlap with each other, the electrodes below the semiconductor layer and the substrate below the semiconductor layer may be damaged. In addition, when the area where the beams overlap becomes small, the semiconductor layer is not sufficiently removed, and in extreme cases, the semiconductor layer cannot be removed.

According to the present invention, when a part of the semiconductor layer is removed by irradiation with an energy beam, the table moving speed or the beam scanning speed is restricted, and the productivity cannot be improved, and at the same time, the fluctuation of the above conditions is caused. This greatly solves the problem of semiconductor removal, resulting in uneven performance of semiconductor devices and reduced yield, while reducing the area of the removed parts to increase the effective area of semiconductor devices. This was done to achieve this.

[Means for solving problems]

The present invention relates to a semiconductor device including separated electrodes existing on the same substrate, a semiconductor including an amorphous semiconductor formed on the electrodes, and an electrode formed on the semiconductor. The removed regions are patterned by being provided in a broken line shape. (1) The removed regions have a substantially square shape, and the shortest distance between adjacent removed regions is r, and the removed region is 70% or more of the number of removed regions is 0 ≦ r ≦ 13D (however, r = D = 0), where D is the maximum diameter from the center to the periphery.
Or (2) the shape of the removed area is substantially elliptical, rectangular or parallelogram, and the shortest distance between adjacent removed areas is r, from the center of the removed area Let D be the maximum distance to the periphery of the area, and 70% or more of the number of removed areas should be 0 ≦ r ≦ 10D.
A semiconductor device characterized by satisfying (however, not r = D = 0) and a semiconductor including an amorphous semiconductor formed on electrodes separately existing on the same substrate are displayed on a table. It was installed and irradiated with the energy beam while moving the table or scanning the energy beam, the removed region was patterned in the semiconductor by providing the removed region in the shape of a broken line, and (1) the electrode was removed. The shape of the region is almost square, and the shortest distance between adjacent removed regions is r, and the maximum diameter of the diameters from the center of the removed region to the peripheral portion is D, and the number of removed regions is 70% or more 0 ≦ r ≦ 13D (where r = D = 0
Or (2) the shape of the removed regions is approximately elliptical, rectangular or parallelogram, and the shortest distance between adjacent removed regions is r,
70% or more of the number of removed regions is 0 ≦ r ≦ 10D (where r = D = 0, where D is the maximum distance from the center of the removed region to the peripheral edge of the region). The present invention relates to a method for manufacturing a semiconductor device, characterized by satisfying the following.

〔Example〕

Examples of the substrate used in the present invention include general substrates used for manufacturing semiconductor devices, such as substrates formed of glass, ceramics, heat-resistant polymer films, heat-resistant resins and the like.

The electrodes that are electrically separated from each other on the substrate may be transparent electrodes or general metal electrodes. However, when the substrate side is used as the light incident surface, it is preferable to use a transparent electrode. As a specific example, a film thickness of 200 formed from ITO, SnO ₂ , Cr, Mo, W, etc.
An electrode used for manufacturing a general semiconductor device having a thickness of about 1 to 2 μm, which is electrically separated.

The semiconductor containing an amorphous semiconductor used in the present invention means that when the semiconductor is composed of a single layer, it is a semiconductor composed of only an amorphous semiconductor or a mixture of an amorphous semiconductor and a crystalline semiconductor. When the semiconductor is composed of multiple layers, it means that at least one of the layers forming the semiconductor layer is an amorphous semiconductor alone or a semiconductor composed of a mixture of an amorphous semiconductor and a crystalline semiconductor. . Such a semiconductor consisting of only an amorphous semiconductor or a mixture of an amorphous semiconductor and a crystalline semiconductor generally has a property of lower electric conductivity than a crystalline semiconductor.

Specific examples of the amorphous semiconductor include amorphous silicon, amorphous silicon carbide, amorphous silicon nitride, and amorphous silicon germane.
Specific examples of semiconductors composed of a mixture of an amorphous semiconductor and a crystalline semiconductor include microcrystalline silicon, fluorinated silicon (microcrystalline), and the like, and specific examples of semiconductors including a multilayer amorphous semiconductor. Examples thereof include an amorphous silicon semiconductor containing microcrystalline silicon formed on crystalline silicon.

Note that the crystalline semiconductor in this specification is a concept including a so-called microcrystalline semiconductor, a polycrystalline semiconductor, or a single crystal semiconductor.

The electrodes formed on the semiconductor including the amorphous semiconductor include Al, Cr, and N when light is incident from the substrate side.
When a metal electrode of i, Mo, W, Ag, Cu or the like is made to enter light from the electrode side, a transparent electrode of ITO, SnO ₂ or the like is preferably used.

In the present invention, a semiconductor-free region is provided in a semiconductor including an amorphous semiconductor in a broken line shape and patterned.

The shape is approximately square, elliptical, rectangular, or parallelogram. The depth of the removed region is as far as the separated electrodes or the central portion (occupied by the removed region) on the same substrate. Within 80% of the area), most of the electrodes may be removed and reach the surface of the substrate.

That the removed region is provided in a broken line shape in this specification includes a case where the removed region is in point contact, and most of the adjacent removed regions are in contact with each other. It is said that it is connected or is continuous in a discontinuous state, the broken line shape formed by the removed region is
Usually, 3 to several tens are provided on the semiconductor layer at intervals of about 5 to 20 mm.

The region removed in a broken line is a semiconductor including an amorphous semiconductor formed on an electrode that exists separately on the same substrate,
For example, it is formed by being installed on a table such as an XY table and irradiating the energy beam while moving the table, or by irradiating while scanning the energy beam.

Examples of the energy beam include a laser beam, an ion beam, an electron beam, and the like. Among them, the laser beam is preferable because it can be used in vacuum or in the atmosphere and can easily pulse.

The shape on the semiconductor irradiated with the energy beam is not particularly limited, but is generally close to a circle.
It is also possible to dispose slits in the energy beam to have an arbitrary shape, but in this case, it is often the case that the shape is a parallelogram such as a square, a rectangle, an ellipse, or a rhombus. The semiconductor is removed by one pulse, but the shape of the area to be removed is determined according to the shape of these irradiation surfaces and their intensity distribution and table moving speed.

In the present invention, in the area surrounded by the envelope connecting the outer peripheral ends of the removed area, if the proportion of the actually removed area is small, electrically connected in series or series-parallel In that case, the resistance becomes large, which is not preferable. Therefore, as shown in FIGS. 1 and 2, the shortest distance between the removed region (2) of the semiconductor (3) and the region removed by the next pulse is r, from the center of the removed region. If the maximum diameter of the diameter of the peripheral portion of the region is D,
If the shape of the removed regions is approximately circular or square, then r> 13D is less than 30% of the removed regions. Further, when the shape of the removed region is a parallelogram such as an ellipse, a rectangle, or a rhombus, r> 10D is less than 30%. Note that FIG. 3 shows the first
It is a figure for demonstrating the AA 'cross section of a figure, (1) is a board | substrate and (4) is a separated electrode.

As used herein, the center of the removed region means the position of its center of gravity with respect to the shape of the removed region.

On the other hand, in each shape, from the viewpoint of productivity and yield, the beam by the next pulse and the beam by the previous pulse overlap each other, and r <
It is not preferable that the portion having 0 becomes large, and it is preferable that the portion having r <0 is less than 30% of the removed region. Therefore, if the shape of the removed area is almost circular or square, 70% of the number of removed areas
The above is 0 ≦ r ≦ 13D (however, r = D = 0 is not always true). If the removed region has a substantially elliptical shape, a rectangular shape, or a parallelogram, 70% or more satisfies 0 ≦ r ≦ 10D (however, r = D = 0).

Irradiation with an energy beam is used to remove part of the semiconductor layer according to the invention.

Equipment for that purpose includes, but is not limited to, solid-state lasers such as Q-switch YAG lasers and Q-switch ruby lasers, CO ₂ TEA lasers, ion guns that generate ion beams, and electron guns that generate electron beams. is not. However, it is preferable that the energy beam is a laser beam such as YAG laser or CO ₂ laser, and that obtained by pulse oscillation such as Q switch laser or TEA laser is preferable.
Moreover, it is preferable that a part of the semiconductor layer is removed while the substrate is placed on a table such as an XY table and moved.

As already explained, by overlapping the energy beams on the semiconductor to continuously remove the semiconductor layer on the substrate from its one end to the other end, the electrodes are patterned on the semiconductor. In such a conventional semiconductor device, the performance of the device varies and the yield decreases, and at the same time, the productivity itself cannot be easily improved. Therefore, in the semiconductor device of the present invention, when a part of the semiconductor including the amorphous semiconductor is removed, the pulse frequency of the energy beam used for the removal and the table moving speed or scanning speed are d
By satisfying the relationship of ≧ 2A and adjusting and manufacturing so that 70% or more of the adjacent removed areas are point-contacted or continuous in a discontinuous state, the low yield of conventional equipment can be achieved. Rate, low productivity can be greatly improved.

Next, one embodiment for removing a semiconductor using a Q-switch YAG laser will be described.

For example, electrodes such as ITO and SnO ₂ are formed on a glass substrate by a method such as electron beam evaporation, and the electrodes are separated by pattern etching. A semiconductor containing an amorphous semiconductor is deposited thereon by a glow discharge decomposition method or the like.
After that, the semiconductor is set up on the XY table, and a Q-switch YAG laser is applied to this to remove a part of the semiconductor.

As the operating conditions of the Q-switch YAG laser, for example, the fundamental wave (1.06 μm) is used and the pulse frequency is 1 to 5 KH
The conditions are z, average output 0.05 to 6w, mode TEM ₀₀ or multimode, pulse width 50 to 600n sen.

The moving speed of the XY table or the scanning speed of the energy beam is 30 to 800 mm / sec, preferably 100 to 60
It is about 0 mm / sec.

A part of the semiconductor including the amorphous semiconductor formed on the separated electrodes existing on the same substrate manufactured in this manner is removed, and further electrodes are formed, and if necessary, patterned. Then, the semiconductor device of the present invention is manufactured.

The semiconductor device of the present invention manufactured as described above can be suitably used as a solar cell connected in series or series-parallel on a single substrate.

Next, the semiconductor device of the present invention and the manufacturing method thereof will be described based on Examples, but the present invention is not limited thereto.

Reference example ITO on a glass with a thickness of 1.1 mm by electron beam evaporation method 800
Å, 200 Å of SnO ₂ was further deposited on ITO and patterned electrodes were formed by pattern etching. Then, by glow discharge decomposition method, substrate temperature 200 ℃, pressure 0.5 ~ 1.0TOr
r, RF power 30w, p-type amorphous SiC: H / i-type amorphous S
Silicon-based semiconductor layers each having a thickness of 150Å, 7000Å, and 300Å were formed with a structure of i: H / n-type microcrystalline Si: H. After that, set the semiconductor layer up on the XY table, and at the table moving speed of 600 mm / sec, Q switch YAG
A part of the semiconductor layer was removed using a laser.

The operating conditions of the Q-switch YAG laser are fundamental wave (1.0
6 μm), pulse frequency 1 KHz, average output 6 w, multimode, pulse width 150 nsec.

The shape of the removed region is close to a perfect circle as shown in FIG. 1, and the average of the removed regions provided within 10 cm is D =
It was 0.04 mm and r = 0.52 mm. Therefore, r = 13D.

After that, an Al electrode was vapor-deposited to a thickness of 5000Å and patterned by chemical etching. Furthermore, it cut | disconnected using the glass cutter and isolate | separated, and the solar cell which connected four solar cells in the same plane in series was manufactured. The effective area of one of the solar cells was about 1 cm ² , and the total effective area was about 4 cm ² .

The solar cell characteristics were measured under a fluorescent lamp of 150 lux by using the obtained four solar cells connected in series. Table 1 shows the average results of 50 solar cells obtained.

Example 1 A part of the semiconductor layer was removed under the same conditions as in the reference example except that a rectangular slit was arranged in the light beam of the laser beam and the table speed was 250 mm / sec.

The shape of the removed area is a rectangle as shown in FIG. 2, and the average of the removed areas provided within 10 cm is D
= 0.035 mm, r = 0.025 mm and thus r = 0.7D.

After that, a solar cell in which four solar cells each having an effective area of about 1 cm ² were connected in series was manufactured in the same manner as in the reference example, and the characteristics thereof were measured under the same conditions as in the reference example. The average result of the obtained 50 solar cells is shown in Table 1. Comparative Example 1 A solar cell was manufactured in the same manner as the reference example except that the moving speed of the XY table was set to 50 mm / sec. In this case, in order to make the beam of one pulse and the beam of the next pulse overlap, the removed region was a continuous straight line as shown in FIG. 4, and the line width was 0.08 mm. .
The characteristics were measured in the same manner as in the reference example. The results are shown in Table 1.

From the results of the first table, it is possible that the device of the present invention can be manufactured under the condition that the table moving speed is large, and thus can be obtained under the manufacturing condition with high productivity, and that the device has stable and high performance. I understand. Further, it can be seen that in Comparative Example 1, the productivity is poor and the yield in terms of performance is poor, and the average value is inferior.

In addition, Example 1 can provide a solar cell having an expanded effective area as compared with Comparative Example 1.

〔The invention's effect〕

The semiconductor device of the present invention has stable performance. Such a semiconductor device can be obtained under the manufacturing conditions having high productivity by the method of the present invention, and it is possible to prevent the yield of products from decreasing even if the manufacturing conditions change. Further, the semiconductor device of the present invention can have a larger effective area and improved performance as compared with the conventional device.

[Brief description of drawings]

FIG. 1 is an explanatory view of an intermediate step of manufacturing the device of the reference example, FIG. 2 is an explanatory view of an intermediate step of one embodiment of manufacturing the device of the present invention, and FIG. 3 is an AA ′ of FIG. FIG. 4 is an explanatory diagram regarding a cross section, and FIG. 4 is an explanatory diagram regarding a state of an intermediate stage of manufacturing a conventional device. (Main symbols in the drawing) (1): Substrate (2): Removed area (3): Semiconductor (4): Separated electrode

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Claims (8)

[Claims] 1. A semiconductor device comprising separated electrodes existing on the same substrate, a semiconductor including an amorphous semiconductor formed on the electrodes, and an electrode formed on the semiconductor.
The semiconductor is patterned by providing a semiconductor-removed region in a dashed line shape, and the removed region has a substantially square shape, and the shortest distance between adjacent removed regions is r. 70% or more of the number of removed regions satisfy 0 ≦ r ≦ 13D (however, r = D = 0), where D is the maximum diameter from the center of the region to the peripheral edge. A semiconductor device comprising: 2. A semiconductor device comprising separate electrodes existing on the same substrate, a semiconductor containing an amorphous semiconductor formed on the electrodes, and an electrode formed on the semiconductor.
A region from which the semiconductor has been removed is provided in a pattern in the semiconductor, and the removed region has a shape of an ellipse, a rectangle, or a parallelogram. 70% or more of the number of removed regions is 0 ≦ r ≦ 10D, where r is the shortest distance and D is the maximum distance from the center of the removed region to the periphery of the region.
A semiconductor device satisfying (however, r = D = 0 does not hold). 3. A semiconductor including an amorphous semiconductor formed on electrodes separately existing on the same substrate is placed on a table, and the table is moved while moving energy or energy.
A method of manufacturing a semiconductor device in which an energy beam is irradiated while scanning a beam, the removed region is provided in a semiconductor in a dotted line pattern, and electrodes are further provided, and the removed region has a substantially square shape. , 70% or more of the number of removed regions is 0 ≦ r ≦, where r is the shortest distance between adjacent removed regions, and D is the maximum diameter from the center of the removed region to the peripheral portion. 13D (however, r =
A method of manufacturing a semiconductor device, characterized in that D is never 0). 4. The method according to claim 3, wherein the energy beam is a laser beam. 5. The laser beam is obtained by pulse oscillation, and a part of the semiconductor is removed by irradiating the semiconductor with the beam while moving a table on which a substrate is installed. The manufacturing method according to item 4. 6. A semiconductor including an amorphous semiconductor formed on electrodes separately existing on the same substrate is placed on a table, and the table is moved while moving the energy.
A method of manufacturing a semiconductor device in which an energy beam is irradiated while scanning a beam, a region removed from a semiconductor is provided in a broken line pattern, and electrodes are further provided, and the shape of the removed region is substantially elliptical, It is a rectangle or a parallelogram, where r is the shortest distance between adjacent removed regions and D is the maximum distance from the center of the removed region to the peripheral portion of the removed region. A manufacturing method of a semiconductor device, wherein 70% or more of the numbers satisfy 0 ≦ r ≦ 10D (however, r = D = 0 is not satisfied). 7. The method according to claim 6, wherein the energy beam is a laser beam. 8. The laser beam is obtained by pulse oscillation, and a part of the semiconductor is removed by irradiating the semiconductor with the beam while moving a table on which a substrate is installed. The manufacturing method according to item 7.