JPH065428Y2 - 液相エピタキシャル成長用溶媒金属 - Google Patents
液相エピタキシャル成長用溶媒金属Info
- Publication number
- JPH065428Y2 JPH065428Y2 JP8677888U JP8677888U JPH065428Y2 JP H065428 Y2 JPH065428 Y2 JP H065428Y2 JP 8677888 U JP8677888 U JP 8677888U JP 8677888 U JP8677888 U JP 8677888U JP H065428 Y2 JPH065428 Y2 JP H065428Y2
- Authority
- JP
- Japan
- Prior art keywords
- solvent metal
- epitaxial growth
- solute
- liquid phase
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002904 solvent Substances 0.000 title claims description 44
- 239000002184 metal Substances 0.000 title claims description 40
- 229910052751 metal Inorganic materials 0.000 title claims description 40
- 239000007791 liquid phase Substances 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8677888U JPH065428Y2 (ja) | 1988-06-30 | 1988-06-30 | 液相エピタキシャル成長用溶媒金属 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8677888U JPH065428Y2 (ja) | 1988-06-30 | 1988-06-30 | 液相エピタキシャル成長用溶媒金属 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0211167U JPH0211167U (enrdf_load_stackoverflow) | 1990-01-24 |
| JPH065428Y2 true JPH065428Y2 (ja) | 1994-02-09 |
Family
ID=31311419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8677888U Expired - Lifetime JPH065428Y2 (ja) | 1988-06-30 | 1988-06-30 | 液相エピタキシャル成長用溶媒金属 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065428Y2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51142603U (enrdf_load_stackoverflow) * | 1975-05-12 | 1976-11-17 |
-
1988
- 1988-06-30 JP JP8677888U patent/JPH065428Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0211167U (enrdf_load_stackoverflow) | 1990-01-24 |
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