JPH0653413A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH0653413A
JPH0653413A JP4201681A JP20168192A JPH0653413A JP H0653413 A JPH0653413 A JP H0653413A JP 4201681 A JP4201681 A JP 4201681A JP 20168192 A JP20168192 A JP 20168192A JP H0653413 A JPH0653413 A JP H0653413A
Authority
JP
Japan
Prior art keywords
electrode pad
chip
pad
bonding method
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4201681A
Other languages
Japanese (ja)
Inventor
Toshio Isono
寿男 磯野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4201681A priority Critical patent/JPH0653413A/en
Publication of JPH0653413A publication Critical patent/JPH0653413A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494Connecting portions
    • H01L2224/4943Connecting portions the connecting portions being staggered
    • H01L2224/49431Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PURPOSE:To realize a master slice system semicustomized LSI in a shorter time at lower cost by selecting the connecting system between an underlying chip and various types of outer case depending on the chip size and the pin count. CONSTITUTION:Electrode pads for connection with outer case are formed in two zigzag rows along the periphery of a semiconductor chip 1. wherein the size of first outside pad 3 is differentiated from that of second inside electrode pad 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路に関し、
特にマスタースライス方式のセミカスタム半導体集積回
路の電極パッドの構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit,
In particular, it relates to a structure of an electrode pad of a master slice type semi-custom semiconductor integrated circuit.

【0002】[0002]

【従来の技術】半導体チップと外部基板あるいは外部ケ
ースとの接続を行う方法としてワイヤーボンディング方
式がある。これは半導体チップ内に設けられた電極パッ
ドと外部基板あるいは外部ケースの電極部との間を直径
30μm程度の金線で結ぶものであるが、比較的容易に
かつ高信頼度で実現できることから現在、半導体集積回
路の組立の主流となっている。
2. Description of the Related Art There is a wire bonding method as a method for connecting a semiconductor chip to an external substrate or an external case. This is to connect an electrode pad provided in a semiconductor chip and an electrode portion of an external substrate or an external case with a gold wire having a diameter of about 30 μm, but it is relatively easy and highly reliable at present. , Has become the mainstream of semiconductor integrated circuit assembly.

【0003】しかしながら半導体製造プロセスの進展に
よるチップシュクリンク化及びCPUのビット数増加や
多相信号処理等の要求からくる多ピン化に対して、必ず
しも有効なボンディング方式ではなくなってきた。つま
りワイヤーボンディング方式の方式の現状規格は一般
に、ワイヤー長:2.5mm、パッドピッチ:120μ
mであるが、これでは4mm平方のチップをプラスチッ
クケースに組み立てる場合、リードフレームの加工技術
の限界ともあいまって最大ピン数は100ピン程度であ
る。しかし0.8μmルールのゲートアレイでは、4m
m平方でほぼ1万ゲートの集積度があり、それに対する
要求ピン数も160ピン以上が現実である。
However, with respect to the chip shrinking due to the progress of the semiconductor manufacturing process, the increase in the number of bits of the CPU, and the increase in the number of pins due to the demand for multi-phase signal processing and the like, the bonding method is not necessarily effective. That is, the current standard of wire bonding method is generally wire length: 2.5 mm, pad pitch: 120 μ.
However, in the case of assembling a 4 mm square chip in a plastic case, the maximum number of pins is about 100 together with the limitation of the lead frame processing technology. However, with a 0.8 μm rule gate array, 4 m
There is a degree of integration of about 10,000 gates in an m-square, and the number of pins required for it is 160 or more in reality.

【0004】従来はこのような場合チップサイズをピン
数が確保できるところまで大きくして対応していたが、
年々下がるゲート単価の影響からもはや対応できなくな
ってきている。そこで狭パッドピッチに適したTABボ
ンディング方式が適用され始めた。これは第1にワイヤ
ー長制限がないこと、第2にパッドピッチはいまのとこ
ろ40μm程度まで可能であることと、上述のワイヤー
ボンディング方式に対し優れた点があるので、ゲートア
レイなど多ピンを必要とする半導体チップはこのTAB
ボンディング方式に対応したパッドピッチ及びパッドサ
イズで設計されている。
Conventionally, in such a case, the chip size has been increased to the extent that the number of pins can be secured.
It is no longer possible to deal with it due to the impact of the unit price of gates, which is decreasing year by year. Therefore, the TAB bonding method suitable for a narrow pad pitch has begun to be applied. Firstly, there is no wire length limitation, secondly, the pad pitch can be up to about 40 μm so far, and there are advantages over the above wire bonding method. The required semiconductor chip is this TAB
It is designed with a pad pitch and pad size compatible with the bonding method.

【0005】[0005]

【発明が解決しようとする課題】他方、基本トランジス
タをマトリクス状に配置しておき、所望の回路機能毎に
配線層を形成するマスタースライス方式のセミカスタム
LSIは、短い開発期間,高い専用性,秘守性の良さな
どからCPU,メモリーと並び、重要な半導体素子とし
て多くのアプリケーションに用いられている。
On the other hand, a master slice type semi-custom LSI, in which basic transistors are arranged in a matrix and a wiring layer is formed for each desired circuit function, has a short development period, high specialization, It is used in many applications as an important semiconductor element along with CPU and memory due to its good confidentiality.

【0006】従って、ゲートアレイに代表されるセミカ
スタムLSIは、顧客から回路情報を得た日からいかに
短期間で製品を製造するかにセールスポイントがある。
これを達成すべく様々な工夫がなされてきているが、そ
のひとつに事前の組立資材整備がある。これは顧客の回
路情報を作り込む以前の下地チップと外部ケースとの接
続関係をあらかじめ決めておき、組立に必要な治具や資
材をいつでも使えるように整備しておくというものであ
る。当然外部ケースは1種類ではなく予想される多種類
のケースを用意しなければならない。
Therefore, a semi-custom LSI represented by a gate array has a selling point in how to manufacture a product in a short period of time from the date when circuit information is obtained from a customer.
Various efforts have been made to achieve this, one of which is the preparation of assembly materials in advance. This is to predetermine the connection relationship between the base chip and the external case before creating the customer's circuit information, and prepare the jigs and materials necessary for assembly so that they can be used at any time. Naturally, it is necessary to prepare not only one type of external case but also many types of cases that are expected.

【0007】このような状況においてTABボンディン
グ方式のみを対象としたパッドピッチ及びパッドサイズ
で下地チップを設計すると、ワイヤーボンディング方式
がまったく使えなくなり、ワイヤーボンディングで組み
立てられるケースでもTABボンディング方式による資
材整備を余儀なくさせる。たとえば4mm平方の下地チ
ップにおいて100ピンのプラスチックケースの資材整
備をする場合、TABテープの資材費の分コストがかか
るTABボンディング方式はワイヤーボンディング方式
より原価率の点で不利である。
In such a situation, if the base chip is designed with a pad pitch and a pad size intended only for the TAB bonding method, the wire bonding method cannot be used at all, and the material maintenance by the TAB bonding method is required even in the case of assembly by wire bonding. Forced. For example, when a material for a 100-pin plastic case is prepared for a base chip of 4 mm square, the TAB bonding method, which requires a cost corresponding to the material cost of the TAB tape, is more disadvantageous than the wire bonding method in terms of cost ratio.

【0008】[0008]

【課題を解決するための手段】本発明の半導体集積回路
は、共通に使用される基本セルを半導体チップに設けて
おき、所望の回路機能を実現するためにこの半導体チッ
プ上に配線を形成して使用する半導体集積回路におい
て、前記半導体チップの周辺部に電極パッドを2列でか
つ千鳥状に配置すると共に、外側に設けられる第1の電
極パッドと内側に設けられる第2の電極パッドとのサイ
ズを異なったものとしたものである。
In a semiconductor integrated circuit of the present invention, a commonly used basic cell is provided on a semiconductor chip, and wiring is formed on the semiconductor chip to realize a desired circuit function. In the semiconductor integrated circuit to be used as the semiconductor chip, the electrode pads are arranged in two rows and in a staggered pattern on the peripheral portion of the semiconductor chip, and the first electrode pad provided on the outer side and the second electrode pad provided on the inner side The size is different.

【0009】[0009]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。図1は本発明の第1の実施例の平面図、図
2は図1における電極パッド部の拡大平面図である。
Embodiments of the present invention will now be described with reference to the drawings. 1 is a plan view of a first embodiment of the present invention, and FIG. 2 is an enlarged plan view of an electrode pad portion in FIG.

【0010】図1及び図2において、シリコン等からな
る半導体チップ1には、配線により共通に使用される基
本セルが基本セル配置領域2内に例えばマトリクス状に
配列されており、その周辺部には2種類の正方形の電極
パッドが2列でかつ千鳥状に配置されている。そして、
特に外側の第1の電極パッド3のサイズは内側の第2の
電極パッド4より大きく形成されている。
In FIGS. 1 and 2, on a semiconductor chip 1 made of silicon or the like, basic cells commonly used for wiring are arranged in a basic cell arrangement region 2 in, for example, a matrix form, and in the peripheral portion thereof. Has two types of square electrode pads arranged in two rows and in a zigzag pattern. And
Particularly, the size of the outer first electrode pad 3 is formed larger than that of the inner second electrode pad 4.

【0011】図2において第1の電極パットサイズ
(幅)aを110μm、第2の電極パッドサイズbを7
0μm、基本セル配置領域2と第2の電極パッド4との
間隔c及び第2の電極パッド4と第1の電極パッド3と
の間隔dを30μmとすると、パッドの領域の幅qは3
00μm程度に収まる。この条件で5mm平方のチップ
を設計すると1万数千ゲートの基本セルを敷き詰めた下
地チップができ、電極パッドのピッチpを85μmとす
ると電極パッド数は外側で100、フルパッドで200
程度となる。従って100ピン以下のケースに組み立て
る場合は図3に示すように、ワイヤー5を用いて電極パ
ッドとリード6を接続するワイヤーボンディング方式を
用いる。また100ピン以上のケースお場合は図4
(a),(b)に示すように、電極パッド上に形成され
たバンプボール7とポリイミド等の支持フイルム8に支
持されたTABリード6Aとを接続するTABボンディ
ング方式で組み立てることになる。
In FIG. 2, the first electrode pad size (width) a is 110 μm, and the second electrode pad size b is 7.
When the distance c between the basic cell disposition region 2 and the second electrode pad 4 and the distance d between the second electrode pad 4 and the first electrode pad 3 are 0 μm, the width q of the pad region is 3 μm.
It is set to about 00 μm. If a 5 mm square chip is designed under this condition, a base chip in which basic cells of 10,000 gates are spread is formed. When the pitch p of electrode pads is 85 μm, the number of electrode pads is 100 on the outside and 200 on the full pad.
It will be about. Therefore, when assembling into a case with 100 pins or less, as shown in FIG. 3, a wire bonding method in which the wire 5 is used to connect the electrode pad and the lead 6 is used. In case of 100 pins or more, see Fig. 4.
As shown in (a) and (b), the bump ball 7 formed on the electrode pad and the TAB lead 6A supported by the support film 8 such as polyimide are connected by the TAB bonding method.

【0012】5mm平方のチップで100ピンの場合ワ
イヤー長はおよそ2mm程度で問題なく組み立てること
ができる。もしパッドサイズを70μm、パッドピッチ
を85μmの単列配置にすると、ワイヤーボンディング
方式ではまったく対応できないため、100ピン以下の
ケースいおいてもTABボンディング方式を用いなけれ
ばならずコスト高になる。
In case of a chip of 5 mm square and 100 pins, the wire length is about 2 mm and it can be assembled without any problem. If the pad size is 70 μm and the pad pitch is 85 μm, the wire bonding method cannot be used at all, and the TAB bonding method must be used even in the case of 100 pins or less, resulting in high cost.

【0013】図5は本発明の第2実施例の電極パッド部
の平面図である。本第2の実施例は、外側の第1の電極
パッド3Aのサイズを内側の第2の電極パッド4Aのも
のより小さく形成した場合であり、その他は第1の実施
例と同様である。
FIG. 5 is a plan view of the electrode pad portion of the second embodiment of the present invention. In the second embodiment, the size of the outer first electrode pad 3A is smaller than that of the inner second electrode pad 4A, and the other points are the same as in the first embodiment.

【0014】図5において第1の電極パッド3Aのサイ
ズaを70μm、第2の電極パッド4Aのサイズbを1
10μm、チップ活性領域と第2の電極パッドとの間隔
c及び第2の電極パッドと第1の電極パッドとの間隔d
を30μmとすると、パッドの領域qは300μm程度
に収まり、第1の実施例と同様に5mm平行のチップで
内側のパッド数100、外側のパッド数200程度とな
る。よって100ピン以下のケースに組み立てる場合は
ワイヤーボンディング方式で、100ピン以上のケース
の場合は第1の実施例と同じく図4に示すようなTAB
ボンディング方式で組み立てることになるが、このとき
TABリード6Aは第1の実施例よりも幅を太くできる
点が有利である。ワイヤーボンディング時のワイヤー長
は微増となる。
In FIG. 5, the size a of the first electrode pad 3A is 70 μm, and the size b of the second electrode pad 4A is 1.
10 μm, a distance c between the chip active region and the second electrode pad and a distance d between the second electrode pad and the first electrode pad
Is 30 μm, the pad area q is within about 300 μm, and as in the first embodiment, the number of inner pads is 100 and the number of outer pads is 200 with a 5 mm parallel chip. Therefore, when assembling in a case with 100 pins or less, a wire bonding method is used, and in the case with 100 pins or more, the TAB as shown in FIG.
It is assembled by a bonding method, but at this time, it is advantageous that the TAB lead 6A can be made wider than in the first embodiment. The wire length during wire bonding is slightly increased.

【0015】[0015]

【発明の効果】以上説明したように本発明は、チップの
周辺部に2列で千鳥状の電極パッドを設け、しかも外側
と内側の電極パッドのサイズを異なるものとすることに
より、下地チップと多種類の外部ケースとの接続方式
を、チップサイズとピン数に見合ったボンディング方式
に選べるため、より安価に、より短時間にマスタースラ
イス方式のセミカスタムLSIを実現できるという効果
がある。
As described above, according to the present invention, staggered electrode pads are provided in two rows in the peripheral portion of the chip, and the size of the outer and inner electrode pads is made different, so that the base chip Since a bonding method suitable for the chip size and the number of pins can be selected as a connection method with a variety of external cases, there is an effect that a master slice type semi-custom LSI can be realized at a lower cost in a shorter time.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の平面図。FIG. 1 is a plan view of a first embodiment of the present invention.

【図2】本発明の第1の実施例の電極パッド部の平面
図。
FIG. 2 is a plan view of an electrode pad portion according to the first embodiment of the present invention.

【図3】第1の実施例を用いワイヤーボンディング方式
で組立た場合の平面図。
FIG. 3 is a plan view of the case where the wire bonding method is used to assemble the first embodiment.

【図4】第1の実施例を用いTABボンディング方式で
組立た場合の平面図と断面図。
4A and 4B are a plan view and a cross-sectional view when assembled by the TAB bonding method using the first embodiment.

【図5】本発明の第2の実施例を説明するための電極パ
ッド部の平面図。
FIG. 5 is a plan view of an electrode pad portion for explaining a second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 半導体チップ 2 基本セル配置領域 3,3A 第1の電極パッド 4,4A 第2の電極パッド 5 ワイヤー 6 リード 6A TABリード 7 バンプボール 8 支持フイルム 1 Semiconductor Chip 2 Basic Cell Arrangement Area 3, 3A First Electrode Pad 4, 4A Second Electrode Pad 5 Wire 6 Lead 6A TAB Lead 7 Bump Ball 8 Support Film

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/82 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/82

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 共通に使用される基本セルを半導体チッ
プに設けておき、所望の回路機能を実現するためにこの
半導体チップ上に配線を形成して使用する半導体集積回
路において、前記半導体チップの周辺部に電極パッドを
2列でかつ千鳥状に配置すると共に、外側に設けられる
第1の電極パッドと内側に設けられる第2の電極パッド
とのサイズを異なったものとしたことを特徴とする半導
体集積回路。
1. A semiconductor integrated circuit in which a commonly used basic cell is provided on a semiconductor chip, and wiring is formed on the semiconductor chip to realize a desired circuit function. The electrode pads are arranged in two rows in a zigzag pattern in the peripheral portion, and the first electrode pad provided on the outer side and the second electrode pad provided on the inner side have different sizes. Semiconductor integrated circuit.
JP4201681A 1992-07-29 1992-07-29 Semiconductor integrated circuit Withdrawn JPH0653413A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4201681A JPH0653413A (en) 1992-07-29 1992-07-29 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4201681A JPH0653413A (en) 1992-07-29 1992-07-29 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH0653413A true JPH0653413A (en) 1994-02-25

Family

ID=16445143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4201681A Withdrawn JPH0653413A (en) 1992-07-29 1992-07-29 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0653413A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121690A (en) * 1997-07-25 2000-09-19 Oki Electric Industry Co., Ltd. Semiconductor device having two pluralities of electrode pads, pads of different pluralities having different widths and respective pads of different pluralities having an aligned transverse edge
US6303948B1 (en) * 1996-02-29 2001-10-16 Kabushiki Kaisha Toshiba Pad layout and lead layout in semiconductor device
GB2422485A (en) * 2004-12-22 2006-07-26 Agilent Technologies Inc IC die with rows of staggered I/O pads with each row having a different pad shape
JP2006337829A (en) * 2005-06-03 2006-12-14 Sharp Corp Driving ic and display device having same mounted thereon
JP2007258469A (en) * 2006-03-23 2007-10-04 Nec Electronics Corp Semiconductor integrated circuit apparatus
KR100768493B1 (en) * 1999-04-27 2007-10-18 오끼 덴끼 고오교 가부시끼가이샤 Semiconductor device
US7397138B2 (en) 2003-03-27 2008-07-08 Matsushita Electric Industrial Co., Ltd. Semiconductor device
WO2012023228A1 (en) * 2010-08-18 2012-02-23 パナソニック株式会社 Semiconductor device and method for manufacturing same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303948B1 (en) * 1996-02-29 2001-10-16 Kabushiki Kaisha Toshiba Pad layout and lead layout in semiconductor device
US6617622B2 (en) 1996-02-29 2003-09-09 Kabushiki Kaisha Toshiba Pad layout and lead layout in semiconductor device having a center circuit
US6121690A (en) * 1997-07-25 2000-09-19 Oki Electric Industry Co., Ltd. Semiconductor device having two pluralities of electrode pads, pads of different pluralities having different widths and respective pads of different pluralities having an aligned transverse edge
KR100768493B1 (en) * 1999-04-27 2007-10-18 오끼 덴끼 고오교 가부시끼가이샤 Semiconductor device
US7847418B2 (en) 2003-03-27 2010-12-07 Panasonic Corporation Semiconductor device
US7397138B2 (en) 2003-03-27 2008-07-08 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US7675184B2 (en) 2003-03-27 2010-03-09 Panasonic Corporation Semiconductor device
US8212366B2 (en) 2003-03-27 2012-07-03 Panasonic Corporation Semiconductor device
US8456024B2 (en) 2003-03-27 2013-06-04 Panasonic Corporation Semiconductor device having a pad-disposition restriction area
GB2422485A (en) * 2004-12-22 2006-07-26 Agilent Technologies Inc IC die with rows of staggered I/O pads with each row having a different pad shape
JP2006337829A (en) * 2005-06-03 2006-12-14 Sharp Corp Driving ic and display device having same mounted thereon
JP2007258469A (en) * 2006-03-23 2007-10-04 Nec Electronics Corp Semiconductor integrated circuit apparatus
WO2012023228A1 (en) * 2010-08-18 2012-02-23 パナソニック株式会社 Semiconductor device and method for manufacturing same

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