JPH0650982Y2 - Immersion type substrate processing equipment - Google Patents
Immersion type substrate processing equipmentInfo
- Publication number
- JPH0650982Y2 JPH0650982Y2 JP15699088U JP15699088U JPH0650982Y2 JP H0650982 Y2 JPH0650982 Y2 JP H0650982Y2 JP 15699088 U JP15699088 U JP 15699088U JP 15699088 U JP15699088 U JP 15699088U JP H0650982 Y2 JPH0650982 Y2 JP H0650982Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate processing
- processing
- processing liquid
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【考案の詳細な説明】 〈産業上の利用分野〉 この考案は、半導体基板や液晶用ガラス基板等の薄板状
基板(以下単に基板と称する)を、薬液処理あるいは洗
浄処理等、所要の処理をするのに用いられる浸漬型の基
板処理装置に関し、殊に基板処理槽に処理済みの用尽処
理液を急速に排出するための排液口を設けた浸漬型基板
処理装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial field of application> This invention applies a required treatment such as a chemical treatment or a cleaning treatment to a thin substrate (hereinafter simply referred to as a substrate) such as a semiconductor substrate or a glass substrate for liquid crystal. More particularly, the present invention relates to an immersion type substrate processing apparatus in which a substrate processing tank is provided with a drainage port for rapidly discharging a processed exhausted processing solution.
〈従来の技術〉 この種の基板処理装置としては、従来より本出願人の提
案に係る第3図に示すもの(実開昭63-93633号公報)が
知られている。<Prior Art> As this type of substrate processing apparatus, the one shown in FIG. 3 (Japanese Utility Model Publication No. 63-93633) proposed by the present applicant has been conventionally known.
それは、処理液111を貯溜する基板処理槽103内下部に処
理液供給部103Aを配置するとともに、その上側に基板W
を浸漬処理する基板処理部103Bを配置し、基板処理槽10
3の側壁下部に比較的大口径の排液口108を設け、排液口
108に開閉弁120を開閉可能に設けて成り、使用済みの用
尽処理液を急速に排出するように構成されている。な
お、第3図中符号101は基板処理槽を内部に配置した排
液槽、102は排液槽101の底壁101aから連出したドレン、
106は処理されるべき基板Wを収容したカセット、105は
基板処理槽103内に配置したカセット載置台、110は多数
の給液孔を有する給液管である。That is, the processing liquid supply unit 103A is arranged in the lower portion of the substrate processing tank 103 that stores the processing liquid 111, and the substrate W is provided above the processing liquid supply unit 103A.
A substrate processing unit 103B for immersing the
A drain port 108 with a relatively large diameter is provided at the bottom of the side wall of 3
An opening / closing valve 120 is provided at 108 so as to be opened and closed, and is configured to rapidly discharge a used exhaust treatment liquid. In FIG. 3, reference numeral 101 is a drainage tank in which a substrate processing bath is arranged, 102 is a drain continuous from a bottom wall 101a of the drainage tank 101,
106 is a cassette containing the substrate W to be processed, 105 is a cassette mounting table arranged in the substrate processing bath 103, and 110 is a liquid supply pipe having a large number of liquid supply holes.
〈考案が解決しようとする課題〉 近年、半導体の集積度が大幅に高密度化し、これととも
に、一般の液晶用ガラス基板等についても一層高い処理
品質が要求されるようになってきた。このため、上記従
来例では次のような問題点が指摘されている。<Problems to be Solved by the Invention> In recent years, the degree of integration of semiconductors has been greatly increased, and along with this, higher processing quality has been required for general glass substrates for liquid crystals and the like. Therefore, the following problems have been pointed out in the above conventional example.
用尽処理液の大部分は大口径の排液口108から急速に排
出されるものの、一部の液滴が基板処理槽103内下部の
コーナ部分等に残留し、それが引き続き貯溜される処理
液内に混入して、一層高い処理品質を得るうえで障害に
なることがある。特に基板の洗浄処理においては無視で
きない障害になる。Most of the exhausted processing liquid is rapidly discharged from the large-diameter drain port 108, but a part of the liquid droplets remains in the lower corners of the substrate processing tank 103, etc., and is continuously stored. It may be mixed in the liquid and become an obstacle in obtaining higher processing quality. In particular, it is a non-negligible obstacle in the cleaning process of the substrate.
また、従来例では用尽処理液の排出により液面が低下
し、液面が底面から数ミリ程度の状態になると、それ以
後は排出に時間がかかり最終的に排水が完了するまでに
はかなりの時間を必要とする。Further, in the conventional example, the liquid level is lowered by the discharge of the exhaustion treatment liquid, and when the liquid level is about a few millimeters from the bottom surface, it takes time to discharge after that, and it is considerably long before the drainage is completed. Need time.
本考案はこのような事情を考慮したもので、使用済みの
用尽処理液を残らず迅速に排出することを技術課題とす
る。The present invention takes such a situation into consideration, and an object of the present invention is to quickly discharge the used exhaustion treatment liquid without remaining.
〈課題を解決するための手段〉 上記課題を解決するために、本考案は前記従来の基板処
理装置を次のように改良したものである。<Means for Solving the Problems> In order to solve the above problems, the present invention is an improvement of the conventional substrate processing apparatus as follows.
即ち、基板処理槽内の処理液供給部と基板処理部とを整
流多孔板で仕切り、整流多孔板をその表面が排液口の下
端縁とほぼ一致もしくはそれ以上の高さとなるように配
置するとともに、排液口を基板処理部とのみ連通させ、
処理液の排液時に、処理液供給部に供給する処理液を微
量に切り替える流量切替弁を付設したことを特徴とする
ものである。That is, the processing liquid supply unit and the substrate processing unit in the substrate processing tank are partitioned by a straightening perforated plate, and the straightening perforated plate is arranged so that its surface is substantially at the height of the lower end edge of the drainage port or higher. At the same time, the drain port communicates only with the substrate processing unit,
The present invention is characterized in that a flow rate switching valve for switching a minute amount of the processing liquid to be supplied to the processing liquid supply unit is attached when the processing liquid is discharged.
〈作用〉 本考案では、処理液供給部と基板処理部とが整流多孔板
で仕切られており、基板を処理する際には、整流多孔板
を介在させることで適当な正圧で基板処理部内に処理液
の均質な上昇流を形成させ、基板の表面をこの上昇流で
均一に処理する。基板の表面処理を終えたなら開閉弁を
開き、排液口より用尽処理液を急速に排出する。なお、
排液口の下端縁は整流多孔板の仕切り位置に対応する高
さ、あるいはそれ以下の高さに配置され、かつ、排液口
は基板処理部とのみ連通されており、処理液の排液時
に、流量切替弁により処理液供給部に供給する処理液を
微量に切り替えることにより、排液口をあけたままで、
微量の処理液を処理液供給部に供給すると、整流多孔板
の上面より新鮮な処理液が微量つづ溢れ出て、整流多孔
板の上面を洗い流す。つまり、使用済みの用尽処理液は
基板処理槽の下部に停留することなく、供給される新鮮
な処理液によって残らず迅速に排出される。<Operation> In the present invention, the processing liquid supply unit and the substrate processing unit are separated by the rectifying porous plate, and when processing the substrate, the rectifying porous plate is interposed so that the inside of the substrate processing unit is provided with an appropriate positive pressure. A uniform upward flow of the processing liquid is formed on the substrate, and the surface of the substrate is uniformly processed by the upward flow. When the surface treatment of the substrate is completed, the open / close valve is opened and the exhausted treatment liquid is rapidly discharged from the liquid discharge port. In addition,
The lower edge of the drainage port is located at a height corresponding to the partition position of the straightening perforated plate or at a height lower than that, and the drainage port is communicated only with the substrate processing section. At times, by switching the flow rate switching valve to a very small amount of processing liquid supplied to the processing liquid supply unit, with the drain port open,
When a small amount of the processing liquid is supplied to the processing liquid supply unit, a small amount of fresh processing liquid overflows from the upper surface of the rectifying porous plate and the upper surface of the rectifying porous plate is washed away. In other words, the used up processing solution is not retained in the lower part of the substrate processing tank and is quickly discharged without leaving by the fresh processing solution supplied.
〈実施例〉 第1図は本考案の一実施例を示す基板の洗浄処理装置の
縦断面図、第2図は第1図のII-II線矢視縦断面図であ
る。<Embodiment> FIG. 1 is a vertical sectional view of a substrate cleaning apparatus showing an embodiment of the present invention, and FIG. 2 is a vertical sectional view taken along the line II-II of FIG.
この洗浄処理装置は、排液槽1内に基板洗浄槽3を配置
し、基板洗浄槽3の側壁下部に比較的大口径の排液口8
を設け、排液口8に開閉弁20を設け、使用済みの用尽処
理液を急速に排出するように構成されている。In this cleaning processing apparatus, a substrate cleaning tank 3 is arranged in a drainage tank 1, and a drainage port 8 having a relatively large diameter is provided below a side wall of the substrate cleaning tank 3.
Is provided and an opening / closing valve 20 is provided at the drainage port 8 so that the used exhaustion treatment liquid is rapidly discharged.
この開閉弁20は、この実施例では排水口8に設けられて
いるが、排水口8に連接される排水管に開閉弁(電磁
弁)を取付けるようにしても良い。The on-off valve 20 is provided in the drainage port 8 in this embodiment, but an on-off valve (electromagnetic valve) may be attached to a drainage pipe connected to the drainage port 8.
基板洗浄槽3内は下部に処理液供給部3Aが、その上側に
基板Wを浸漬処理する基板処理部3Bがそれぞれ配置さ
れ、処理液供給部3Aと基板処理部3Bとは整流多孔板4で
仕切られ、整流多孔板4はその表面が排液口8の下端縁
8aに合致させて配置されている。In the substrate cleaning tank 3, a processing liquid supply unit 3A is arranged in the lower part, and a substrate processing unit 3B for immersing the substrate W is arranged in the upper part thereof, and the processing liquid supply unit 3A and the substrate processing unit 3B are a rectifying porous plate 4. The rectifying perforated plate 4 is partitioned and the surface thereof is the lower edge of the drainage port 8.
It is arranged to match 8a.
なお、第1図では排液口8の下端縁8aが整流多孔板4の
表面と一致するように図示されているが、下端縁8aがそ
れより低く取付けられても良いことは勿論である。In addition, in FIG. 1, the lower end edge 8a of the drainage port 8 is illustrated so as to coincide with the surface of the rectifying porous plate 4, but it goes without saying that the lower end edge 8a may be mounted lower than that.
整流多孔板4の上側には簀の子状のカセット載置台5が
設けられ、カセット6内に縦向きに収容した多数の基板
Wを一度に洗浄するように構成されている。On the upper side of the rectifying perforated plate 4, a bowl-shaped cassette mounting table 5 is provided, and is configured to wash a large number of substrates W housed vertically in a cassette 6 at once.
一方、処理液供給部3Aには排液口8の下側に給液口10を
設け、それを流量切替弁12に連結し、整流多孔板4の下
側にバブリング用のN2ガス管15を配置し、基板洗浄時に
は、処理液供給部3A内を一定の正圧にして純水洗浄液11
及びN2ガスの上昇整流を形成し、この上昇整流によって
多数の基板Wを均一に処理するように構成されている。On the other hand, in the processing liquid supply unit 3A, a liquid supply port 10 is provided below the liquid discharge port 8 and is connected to a flow rate switching valve 12, and an N 2 gas pipe 15 for bubbling is provided below the flow straightening plate 4. When cleaning the substrate, the inside of the processing liquid supply unit 3A is set to a constant positive pressure and the pure water cleaning liquid 11
And the rising rectification of the N 2 gas are formed, and the large number of substrates W are uniformly processed by the rising rectification.
なお、流量切替弁12は通常、基板処理時には弁13が使用
され、処理液の排液時には、弁14に切り替えられ、処理
液供給部に供給する処理液を微量に切り替える。It should be noted that the flow rate switching valve 12 normally uses the valve 13 at the time of processing the substrate, and switches it to the valve 14 at the time of draining the processing liquid to switch a small amount of the processing liquid supplied to the processing liquid supply unit.
排液口8にはフランジ17が外嵌固定してあり、その端面
にフッ素樹脂製シール18を配置して弁座18を形成し、弁
座18に開閉弁20の弁子21を押圧して排液口8を閉止する
ように構成されている。この弁子21は排液槽1の側壁に
フッ素樹脂製ベローズ24を介して固定され、弁子21から
連出した弁軸22はベローズ24内でエアシリンダ25の作動
軸26に圧縮バネ23を介して連結されており、エアシリン
ダ25の進出作動で弁子21が弁座18に当接して排液口8を
密閉し、退出作動で排液口8を開くようにしてある。A flange 17 is externally fitted and fixed to the drainage port 8, and a fluororesin seal 18 is arranged on an end surface of the flange 17 to form a valve seat 18, and a valve 21 of the on-off valve 20 is pressed against the valve seat 18. It is configured to close the drainage port 8. The valve element 21 is fixed to the side wall of the drainage tank 1 through a fluororesin bellows 24, and the valve shaft 22 extending from the valve element 21 has a compression spring 23 attached to the operating shaft 26 of the air cylinder 25 in the bellows 24. The valve 21 is brought into contact with the valve seat 18 by the advancing operation of the air cylinder 25 to seal the drainage port 8 and the drainage port 8 is opened by the withdrawal action.
なお、基板処理槽3の底壁3aは排液口8側へゆるい傾斜
勾配にしてあり、給液口10の下側にメンテナンス時の洗
浄排水を排出する排水口16が配置されている。The bottom wall 3a of the substrate processing tank 3 has a gentle slope toward the drain port 8, and a drain port 16 for draining cleaning drainage for maintenance is arranged below the liquid feed port 10.
上記構成からなる基板処理槽では基板処理時に整流多孔
板4の全面に形成された小孔4aより洗浄液11及びN2ガス
の気泡が噴出し、均一な上昇流を形成することになり、
多数の基板Wを均一に処理することができる。なお、基
板処理槽3よりオーバーフローした洗浄液はドレン2よ
り流下し循環流路に付設された精製装置(図示せず)を
介して精製され、再利用される。In the substrate processing tank having the above structure, the cleaning liquid 11 and the N 2 gas bubbles are ejected from the small holes 4a formed on the entire surface of the straightening porous plate 4 during the substrate processing to form a uniform upward flow,
A large number of substrates W can be uniformly processed. The cleaning liquid overflowing from the substrate processing bath 3 is purified from a drain 2 and purified by a purification device (not shown) attached to the circulation channel, and reused.
一方、洗浄液の排出時には、流量切替弁12が微量供給用
の弁14に切り替えられ、整流多孔板4の小孔4aより新鮮
な洗浄液が噴出して整流多孔板4の表面を覆う。これに
より基板Wの洗浄処理に用いられた洗浄液の一部が、基
板処理槽3の下部に停留することはなくなる。On the other hand, at the time of discharging the cleaning liquid, the flow rate switching valve 12 is switched to the valve 14 for supplying a small amount, and the fresh cleaning liquid is ejected from the small holes 4a of the rectifying porous plate 4 to cover the surface of the rectifying porous plate 4. This prevents a part of the cleaning liquid used for cleaning the substrate W from staying in the lower part of the substrate processing bath 3.
つまり、排液時には、微量供給される純水洗浄液によっ
て用尽処理液を残らず迅速に排出することができる。こ
れにより死水が発生したり、死水が原因となって配管中
にバクテリアが発生することはなくなり、全体として節
水効果も大きい。That is, at the time of drainage, the exhaustion treatment liquid can be quickly drained without remaining by the pure water cleaning liquid supplied in a small amount. As a result, dead water is not generated and bacteria are not generated in the pipe due to dead water, and the water saving effect is large as a whole.
上記実施例では、基板の洗浄処理装置として説明したが
これに限るものではなく、用尽処理液の残留が弊害とな
る薬液処理装置の場合に広く実施できる。また、整流多
孔板の孔径や配列、開閉弁、流量切替弁等についても多
様な変形を加えて実施し得ることは他言を要しない。In the above-described embodiment, the substrate cleaning processing apparatus has been described, but the present invention is not limited to this, and can be widely implemented in the case of a chemical processing apparatus in which the remaining exhausted processing solution is harmful. Further, it is not necessary to say anything else that various modifications can be made to the hole diameter and arrangement of the rectifying perforated plate, the on-off valve, the flow rate switching valve, and the like.
〈考案の効果〉 以上の説明で明らかなように、本考案では基板処理部と
処理液供給部とを整流多孔板で上下に仕切り、整流多孔
板をその表面が排液口の下端縁とほぼ一致もしくはそれ
以上の高さとなるように配置するとともに、排液口を基
板処理部とのみ連通させ、処理液の排液時に、処理液供
給部に供給する処理液を微量に切り替える流量切替弁を
付設したので、整流多孔板の上面に新鮮な処理液を微量
づつ供給することにより、用尽処理液を残らず迅速に排
出することができる。また、上記のように、排液時に処
理液を微量づつ供給することにより、排出する処理液の
節約効果も大きい。<Effect of the Invention> As is clear from the above description, in the present invention, the substrate processing section and the processing liquid supply section are vertically divided by the straightening porous plate, and the surface of the straightening porous plate is almost the bottom edge of the drainage port. In addition to arranging so that the height is the same or higher, the drain port communicates only with the substrate processing unit, and when the processing liquid is drained, a flow rate switching valve that switches a small amount of the processing liquid supplied to the processing liquid supply unit is provided. Since it is attached, by supplying a small amount of fresh treatment liquid to the upper surface of the rectifying porous plate, the exhaustion treatment liquid can be quickly discharged without remaining. Further, as described above, by supplying a small amount of the processing liquid at the time of discharging the liquid, the effect of saving the discharged processing liquid is great.
第1図は本考案の一実施例を示す洗浄処理装置の縦断面
図、第2図は第1図のII-II線矢視縦断面図、第3図は
従来例を示す第1図相当図である。 3……基板処理槽、3A……処理液供給部、 3B……基板処理部、4……整流多孔板、 8……排液口、8a……排液口の下端縁、 11……処理液(純水洗浄液)、 12……流量切替弁、20……開閉弁、 W……基板。FIG. 1 is a vertical sectional view of a cleaning processing apparatus showing an embodiment of the present invention, FIG. 2 is a vertical sectional view taken along the line II-II of FIG. 1, and FIG. 3 is a conventional example corresponding to FIG. It is a figure. 3 ... Substrate processing tank, 3A ... Treatment liquid supply unit, 3B ... Substrate treatment unit, 4 ... Rectifying perforated plate, 8 ... Drain port, 8a ... Bottom edge of drain port, 11 ... Treatment Liquid (pure water cleaning liquid), 12 ... Flow switching valve, 20 ... Open / close valve, W ... Substrate.
Claims (1)
理液供給部を配置するとともに、その上部に基板を浸漬
処理する基板処理部を配置し、基板処理槽の側壁下部に
排液口を設け、排液口に開閉弁を設けて成り、使用済み
の用尽処理液を急速に排出するように構成した浸漬型基
板処理装置において、 基板処理槽内の処理液供給部と基板処理部とを整流多孔
板で仕切り、整流多孔板をその表面が排液口の下端縁と
ほぼ一致もしくはそれ以上の高さとなるように配置する
とともに、排液口を基板処理部とのみ連通させ、処理液
の排液時に、処理液供給部に供給する処理液を微量に切
り替える流量切替弁を付設したことを特徴とする浸漬型
基板処理装置。1. A processing liquid supply unit is arranged in a lower portion of a substrate processing tank for storing a processing liquid, and a substrate processing unit for dipping a substrate is arranged in an upper portion of the processing liquid supply unit, and a drainage liquid is disposed under a side wall of the substrate processing tank. An immersion-type substrate processing apparatus that has a port and an opening / closing valve at the drainage port that is configured to rapidly discharge the used exhausted processing liquid. The part is separated by a straightening porous plate, and the straightening porous plate is arranged such that the surface thereof is substantially at the height of the lower end edge of the drainage port or higher, and the drainage port is communicated only with the substrate processing part, An immersion type substrate processing apparatus characterized in that a flow rate switching valve for switching a minute amount of the processing liquid to be supplied to the processing liquid supply unit is provided when the processing liquid is discharged.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15699088U JPH0650982Y2 (en) | 1988-11-30 | 1988-11-30 | Immersion type substrate processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15699088U JPH0650982Y2 (en) | 1988-11-30 | 1988-11-30 | Immersion type substrate processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0276837U JPH0276837U (en) | 1990-06-13 |
JPH0650982Y2 true JPH0650982Y2 (en) | 1994-12-21 |
Family
ID=31436033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15699088U Expired - Lifetime JPH0650982Y2 (en) | 1988-11-30 | 1988-11-30 | Immersion type substrate processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0650982Y2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2568799Y2 (en) * | 1990-07-10 | 1998-04-15 | 株式会社 カイジョー | Wafer processing equipment |
JPH071795Y2 (en) * | 1990-09-10 | 1995-01-18 | 大日本スクリーン製造株式会社 | Immersion type substrate cleaning equipment |
JPH071794Y2 (en) * | 1990-12-28 | 1995-01-18 | 大日本スクリーン製造株式会社 | Immersion type substrate processing tank |
JP5490395B2 (en) * | 2008-10-07 | 2014-05-14 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and manufacturing method thereof |
-
1988
- 1988-11-30 JP JP15699088U patent/JPH0650982Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0276837U (en) | 1990-06-13 |
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