JPH0594978A - Semiconductor substrate dipping treatment tank - Google Patents

Abstract

PURPOSE:To enable particles suspended in treatment liquid in an inner tank to be effectively discharged. CONSTITUTION:A lid 7 which decreases the opening of an inner tank 3 in area is provided to lessen the surface of the inner tank 3 in contact with outside air in area, the overflow of treatment liquid is increased in flow rate to discharge particles without increasing treatment liquid supplied from a treatment liquid groove 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate immersion treatment tank used for wet treatment by immersing a semiconductor substrate in a chemical solution or ultrapure water.

[0002]

2. Description of the Related Art Conventionally, this type of semiconductor substrate (hereinafter referred to as "wafer") dipping processing tank is composed of an inner tank and an outer tank, and the processing solution is introduced from the bottom of the inner tank and overflows from the upper surface of the inner tank. The overflowed processing solution was collected in the outer tank.

FIG. 4 is a schematic sectional view showing an example of a conventional wafer immersion treatment tank. This wafer immersion treatment tank is
As shown in FIG. 4, it has an inner tank 3 in which the wafers 2 stored in the carrier are dipped, and an outer tank 5 in which the liquid supplied from the processing liquid supply port 4 is stored to overflow from the upper part of the inner tank 3. Was there.

Such a wafer dipping treatment bath has been widely used as a cleaning device in the semiconductor manufacturing process because of its simple structure and easy handling.

[0005]

In the above-mentioned conventional wafer dipping treatment bath, the treatment liquid filled in the inner bath and the outside air are in a relatively large contact area, so that the treatment liquid overflows from the inner bath to the outer bath. The speed becomes extremely slow, particles contained in the processing liquid in the inner tank are difficult to be discharged from the inner tank to the outer tank, and reattach to the wafer to be processed, which lowers the yield in the subsequent process. There was a problem.

An object of the present invention is to provide a wafer dipping treatment bath in which particles contained in the treatment liquid are easily discharged in order to solve such a problem.

[0007]

A semiconductor substrate dipping treatment tank of the present invention has an inner tank having an opening and a treatment liquid supply port for supplying a treatment liquid, and a treatment liquid overflowing from the inner reservoir. A semiconductor substrate immersion treatment tank having an outer tank for discharging, which is provided with a lid for reducing the area of the opening.

[0008]

The present invention will be described below with reference to the drawings.

FIG. 1 is a schematic sectional view of a wafer immersion treatment tank showing an embodiment of the present invention. As shown in FIG. 1, this wafer dipping treatment bath opens and closes an opening of an outer bath 5 including an inner bath 3, and a pyramidal portion 9 which is dipped in the processing liquid of the inner bath 3.
That is, the lid 7 having the above is provided. The lid 7 is opened and closed by a hinge mechanism to drive a motor 8 for driving the hinge mechanism.
Is provided. Other than that, it is the same as the conventional example.

FIG. 2 is a perspective view showing the lid of FIG. As shown in FIG. 2, this lid is a plate-shaped lid main body 10 of a size that completely closes the opening of the outer tub 5, a pyramidal body portion 9 attached to one surface side of the lid main body 10, and a lid main body 10. 1 attached to one end side of the arm and the other end side to the hinge mechanism
It is composed of 1. Moreover, the cross-sectional area of the pyramidal portion 9 is smaller than the opening area of the inner tank 3, and the pyramidal portion is so large that it can be reasonably inserted into this opening and immersed in the treatment liquid.

Next, the operation of this wafer immersion treatment tank will be described. First, the lid 7 is opened with the processing liquid overflowing from the inner tank 3 to the outer tank 5, and the wafer 2 is loaded into the inner tank 3. Next, the lid 7 is closed and the immersion process is performed.

At this time, if the area where the processing liquid in the inner tank 3 contacts the outside air is equal to the effective cross-sectional area of the processing liquid supply port 4, the speed of the processing liquid overflowing from the inner tank 3 is 4 is equal to the velocity of the treatment liquid in the tank 4, and the velocity of the treatment liquid overflowing from the inner tank 3 can be increased by reducing the area of contact between the treatment liquid in the inner tank 3 and the outside air, in other words, the lid 7 It suffices to increase the size of the pyramidal body portion 9 of.

Thus, if the opening area of the inner tank 3 is reduced by the pyramidal portion 9 and the overflow speed from the inner tank 3 is increased, the particles in the inner tank 3 are efficiently discharged to the outer tank 5. It

FIG. 3 is a schematic sectional view of a wafer dipping treatment tank showing another embodiment of the present invention. This wafer dipping treatment tank has a size that closes the opening of the inner tank 3 and is provided with a lid 7a having a conical recess from one surface side and an opening 12 extending from the recess.

The operation of this wafer dipping treatment bath is as follows. When the carrier 1 containing the wafer 2 is dipped in the treatment liquid and the lid 7a is closed, the treatment liquid in the inner bath 3 is passed through the opening 12 of the lid 7a to the outer bath 5. It will overflow to. That is, the area of contact between the processing liquid in the inner tank 3 and the outside air is the area of the opening 12.

The lid in this embodiment is simpler and easier to process than the shape of the lid in the previous embodiments. In particular, since the area of the opening 10 can be easily adjusted, there is an advantage that the overflow rate of the processing liquid can be easily set.

[0017]

As described above, according to the present invention, the area where the processing liquid in the inner tank comes into contact with the outside air is reduced by the lid that closes the opening of the inner tank. There is an effect that the overflow speed of the liquid from the inner tank to the outer tank is increased, the particles stagnant in the inner tank are efficiently overflowed, and the particles contained in the treatment liquid in the inner tank can be efficiently discharged.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a wafer immersion treatment tank showing an embodiment of the present invention.

FIG. 2 is a perspective view showing the lid of FIG.

FIG. 3 is a schematic cross-sectional view of a wafer immersion treatment tank showing another embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of a wafer dipping treatment tank showing a conventional example.

[Explanation of symbols]

 1 Carrier 2 Wafer 3 Inner Tank 4 Processing Liquid Supply Port 5 Outer Tank 6 Outer Tank Outlet 7, 7a Lid 8 Motor 9 Pyramidal Body 10 Lid Main Body 11 Arm

Claims (2)

[Claims] 1. A semiconductor substrate dipping treatment tank comprising an inner tank having an opening and having a treatment liquid supply port for supplying a treatment liquid, and an outer tank for storing and discharging the treatment liquid overflowing from the inner tank. A semiconductor substrate immersion treatment bath, comprising a lid for reducing the area of the opening. 2. The semiconductor substrate immersion treatment bath according to claim 1, wherein the lid has the same shape as the opening and has an opening.