JPH0437131A - Pure water washing vessel for semiconductor wafer and washing thereof - Google Patents

Pure water washing vessel for semiconductor wafer and washing thereof

Info

Publication number
JPH0437131A
JPH0437131A JP14349090A JP14349090A JPH0437131A JP H0437131 A JPH0437131 A JP H0437131A JP 14349090 A JP14349090 A JP 14349090A JP 14349090 A JP14349090 A JP 14349090A JP H0437131 A JPH0437131 A JP H0437131A
Authority
JP
Japan
Prior art keywords
water
wafer
tank
weir
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14349090A
Other languages
Japanese (ja)
Inventor
Hitoshi Suzuki
仁 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP14349090A priority Critical patent/JPH0437131A/en
Publication of JPH0437131A publication Critical patent/JPH0437131A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a treated pure wafer after lessening the quantity of expensive pure water used and shortening the time of treatment thereof as well by allowing this water vessel to be equipped with a trough which is installed around a directly lower part of the outside circumference of a weir that is on the same level surface as that found at the upper edge of the water vessel and a means for maintaining the reference surface of water which makes the surface of water in the trough level or taking the like measures for treating the wafer. CONSTITUTION:In the pure water washing vessel of a semiconductor wafer 6 consisting of: a water vessel 1; a water supply pipe 2a at the lower part of the water vessel 1, and a weir 5 located at the same level surface as that found at the upper edge of the water vessel 1, the water vessel is equipped with a trough 11 which is installed around a directly lower part of the outside circumference of the weir mentioned above and a means 12 for maintaining the reference surface of water which makes the surface of water in the trough 11 level. Further, the surface of the wafer 6 is immersed in the water vessel consisting of the water vessel 1, the water supply pipe 2a, and the weir 5 so that the surface of the wafer is almost perpendicular to the water vessel and pure water is fed from the water supply pipe 2a. When the wafer 6 is washed by overflowing from the weir 5, the device surface 6a of the wafer 6 is tilted downwards supposing pure water flows upwards to the wafer 6 and when the wafer 6 is taken out of the water vessel 1, the device surface 6a is tilted upwards when pure water flows downwards to the wafer 6.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、半導体ウェハの純水水洗槽及び水洗方法に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a pure water washing tank and a washing method for semiconductor wafers.

〔従来の技術〕[Conventional technology]

従来の半導体ウェハ(以下、ウェハとも言う)の純水水
洗槽及び水洗方法は、およそ次のとおりである。
Conventional pure water washing baths and washing methods for semiconductor wafers (hereinafter also referred to as wafers) are approximately as follows.

すなわち、水槽と、この水槽の下部の給水管と、前記水
槽の上縁の堰とからなる水洗槽を使用し、適宜なカセッ
トに多数のウェハを収納し、ウェハの面がほぼ垂直にな
るようにして前記水槽に浸漬し、純水を前記給水管から
供給して前記堰からオーバフローさせ、前記ウェハを水
洗する。
That is, a washing tank consisting of a water tank, a water supply pipe at the bottom of the tank, and a weir at the upper edge of the tank is used, and a large number of wafers are stored in a suitable cassette so that the surfaces of the wafers are almost vertical. The wafer is immersed in the water tank, and pure water is supplied from the water supply pipe to overflow from the weir to wash the wafer.

水洗された前記ウェハを水槽から取り出すには、水槽の
下部に排水管を設け、この排水管から純水を排水してか
らウェハを取り出す。
To take out the washed wafer from the water tank, a drain pipe is provided at the bottom of the water tank, and the pure water is drained from the drain pipe before the wafer is taken out.

他の取り出し方法は、純水を排水することなく、純水中
からウェハを引上げて取り出す。
Another method for removing the wafer is to pull the wafer out of the pure water without draining the water.

後者の取出し方法では、複数の水槽を用意し、順次、よ
りクリーンな純水を保つ後工程の水槽にウェハを移替え
、より洗浄度の低いウェハを後続させる一方、純水は逆
に最終工程の水槽から順次、先工程の水槽に移送する、
いわゆるカスケード方式をとることもある。
In the latter extraction method, multiple water tanks are prepared, and the wafers are sequentially transferred to the post-process water tank that maintains cleaner pure water, followed by wafers that are less clean, while the pure water is transferred to the post-process water tank that holds cleaner water. The water is sequentially transferred from the water tank to the water tank in the previous process.
A so-called cascade method may also be used.

また前記水槽の上縁の堰はなるべく正しく同一水平面に
保ち、時には上縁を水槽の全周にわたり鋸歯状とするこ
とにより、全周に多数の三角堰を形成したりすることも
ある。こうすると、堰からオーバフローする純水の流量
が全周にわたり均一になり、水槽内の多数のウェハのそ
れぞれの表面に均一な純水の流速が得られることになる
。結局、高価な純水をより少なく使用し、より早く、同
一な清浄度にウェハを処理することができる。
Further, the weir at the upper edge of the water tank is kept as accurately as possible in the same horizontal plane, and sometimes the upper edge is made serrated over the entire circumference of the tank, thereby forming a large number of triangular weirs around the entire circumference. In this way, the flow rate of pure water overflowing from the weir becomes uniform over the entire circumference, and a uniform flow rate of pure water can be obtained on each surface of a large number of wafers in the water tank. After all, wafers can be processed faster and to the same level of cleanliness using less expensive pure water.

C発明が解決しようとする課題〕 前記の従来の技術において、水槽を水平に設置して堰が
正しく水平になるようにしたり、複数三角堰を形成した
りしてもなお、堰からオーバフローする純水の流量が堰
の全周にわたって均一にならないことがある。それは水
槽内のウェハの配列や、カセットや、カセットを保持す
る何らかの保持具等の流体抵抗により、水槽内を上昇す
る純水の流れに乱れや、流速の大きさや方向の偏りが発
生することに原因することが判明する。
Problem to be solved by the invention C] In the above-mentioned conventional technology, even if the water tank is installed horizontally to ensure that the weir is properly leveled, or a plurality of triangular weirs are formed, there is still a problem that the water overflows from the weir. The flow rate of water may not be uniform around the entire circumference of the weir. This is due to the arrangement of the wafers in the water tank, the fluid resistance of the cassette, and some kind of holder that holds the cassette, which can cause turbulence in the flow of pure water rising in the tank, and deviations in the size and direction of the flow velocity. It turns out that this is the cause.

また、純水がウェハの存在しない水槽内壁流域を無駄に
上昇したり、ウェハの間を流れる純水の流れもいわば素
通りするなど純水が有効に利用されないという様子がう
かがわれる。
In addition, it appears that the pure water is not being used effectively, as the pure water rises up the inner wall area of the water tank where there are no wafers, and the pure water that flows between the wafers passes through the tank.

この発明の目的は、高価な純水の使用量をより少なくし
、処理時間を短縮して清浄なウェハを処理できる半導体
ウェハの純水水洗槽及び水洗方法を提供することにある
An object of the present invention is to provide a pure water washing tank and a washing method for semiconductor wafers, which can reduce the amount of expensive pure water used, shorten the processing time, and process clean wafers.

〔課題を解決するための手段〕[Means to solve the problem]

この発明1の半導体ウェハの純水水洗槽は、水槽と、こ
の水槽の下部の給水管と、前記水槽の上縁の同一水平面
に位置する堰とからなる半導体ウェハの純水水洗槽にお
いて、 前記堰の外周直下を巡る樋と、この樋の水面を水平に維
持する基準水面雑持手段とを備えるものである。
A pure water washing tank for semiconductor wafers according to the first aspect of the present invention is a pure water washing tank for semiconductor wafers, which comprises a water tank, a water supply pipe at the lower part of the water tank, and a weir located on the same horizontal plane at the upper edge of the water tank, which has the following steps: It is equipped with a gutter that runs just below the outer periphery of the weir, and a reference water surface holding means that maintains the water surface of this gutter horizontally.

ここで、基準水面雑持手段は、実施例に示す水面維持管
のほか、樋の外周に堰のみねより低い、いわば第2の堰
を設けてもよい。
Here, the reference water level maintenance means may include, in addition to the water level maintenance pipe shown in the embodiment, a so-called second weir that is lower than the weir depth on the outer periphery of the gutter.

発明2の半導体ウェハの純水水洗槽は、水槽と、この水
槽の下部の給水管と、前記水槽の上縁の堰とからなる半
導体ウェハの純水水洗槽において、 前記水槽内で面をほぼ垂直にして平行配列される複数の
ウェハの下方に配置される絞り板と、この絞り板に設け
られ前記複数のウェハの下方の領域に位置する開口部と
を備えるものである。
A pure water washing tank for semiconductor wafers according to the second aspect of the present invention is a pure water washing tank for semiconductor wafers, which comprises a water tank, a water supply pipe at the lower part of the water tank, and a weir at the upper edge of the water tank, in which a surface within the water tank is almost completely covered with water. The diaphragm plate includes an aperture plate disposed below a plurality of wafers arranged vertically in parallel, and an opening provided in the aperture plate and located in a region below the plurality of wafers.

ここで、絞り板は、実施例に示す保持台が兼ねてもよい
し、ウェハを収納するカセットを水槽内の簡単なビンに
引掛けるような場合にはカセットの底面が絞り板を兼ね
るようにしてもよい。またウェハに水流を有効に当てる
のが目的であるから、堰を水槽の上縁の一部に設けても
よく、発明lのように同一水平面に位置する堰は必須の
構造ではない。
Here, the aperture plate may also serve as the holding stand shown in the embodiment, or if the cassette that stores the wafers is hung in a simple bottle in a water tank, the bottom of the cassette may also serve as the aperture plate. It's okay. Furthermore, since the purpose is to effectively apply the water flow to the wafers, a weir may be provided at a part of the upper edge of the water tank, and the weir located on the same horizontal plane as in Invention I is not an essential structure.

発明3の半導体ウェハの純水水洗槽は、水槽と、この水
槽の下部の給水管と、前記水槽の上縁の堰とからなる半
導体ウェハの純水水洗槽において、 前記給水管の上方に配置され前記ウェハの面をほぼ垂直
に保持する保持台と、この保持台を傾動する傾動手段と
を備えるものである。
The pure water washing tank for semiconductor wafers of invention 3 is arranged above the water supply pipe in the pure water washing tank for semiconductor wafers, which comprises a water tank, a water supply pipe at the lower part of the water tank, and a weir at the upper edge of the water tank. The wafer is provided with a holding table for holding the surface of the wafer substantially vertically, and a tilting means for tilting the holding table.

ここでも、発明1のように同一水平面に位置する堰は必
須の構造ではない。
Here again, the weirs located on the same horizontal plane as in Invention 1 are not an essential structure.

発明40半導体ウェハの純水水洗槽は、発明2又は3に
おいて、 請求項2又は3記載の半導体ウェハの純水水洗槽におい
て、 前記水槽の下部に排水管を備えるものである。
Invention 40 A pure water washing tank for semiconductor wafers is the pure water washing tank for semiconductor wafers according to the second or third aspect of the invention, wherein a drain pipe is provided at a lower part of the water tank.

なおこの発明4は従来例で説明した、排水管から純水を
排水してからウェハを取り出す方法に使用でき、発明1
から3までのものは、純水を排水することなく純水中か
らウェハを取り出す方法にも使用できる。
In addition, this invention 4 can be used for the method of draining pure water from a drain pipe and then taking out a wafer, as explained in the conventional example, and is similar to invention 1.
Items from 3 to 3 can also be used to take out wafers from pure water without draining the water.

発明5の半導体ウェハの水洗方法は 水槽と、この水槽の下部の給水管と、前記水槽の上縁の
堰とからなる水洗層にウェハの面をほぼ垂直にして浸漬
し、純水を前記給水管から供給し、前記基からオーバフ
ローさせて前記ウェハを水洗する半導体ウェハの水洗方
法において、前記ウェハに対して前記純水が上方に流れ
る時には、前記ウェハのデバイス面を下方に傾け、前記
ウェハを前記水槽から取り出すのに際して、前記ウェハ
に対して前記純水が下方に流れる時には、前記デバイス
面を上方に傾けるものである。
In the method for washing semiconductor wafers according to the fifth aspect of the invention, the wafer is immersed with its surface substantially vertically in a washing layer consisting of a water tank, a water supply pipe at the bottom of the water tank, and a weir at the upper edge of the water tank, and pure water is poured into the water supply. In a semiconductor wafer washing method in which the water is supplied from a pipe and overflows from the base to wash the wafer, when the pure water flows upward to the wafer, the device surface of the wafer is tilted downward, and the wafer is washed with water. When the wafer is taken out from the water tank, the device surface is tilted upward when the pure water flows downward with respect to the wafer.

ここで、ウェハに対して純水が下方に流れる時という語
句は、ウェハ取り出しに際して排水してから取り出す場
合と排水することなく純水中からウェハを取り出す場合
の両方を示し、ウェハと純水との相対的な動きを示す。
Here, the phrase "when pure water flows downward relative to the wafer" refers to both cases in which the wafer is drained before being taken out, and cases in which the wafer is taken out from pure water without draining, and the wafer and pure water are indicates the relative movement of

〔作用〕[Effect]

発明1において、堰の直下にある樋の水面はいわゆるも
ぐり堰における下流の水面に近い作用を示す。一般に、
堰には堰の下流の水面が堰のみねより充分低く、下流の
水面の高さが堰をオーバフローする流れに全く影響しな
いとする通常の堰と、下流の水面が堰のみねより高いも
ぐり堰とがよく知られている。もぐり堰ではないが、堰
のみね直下に下流の水面が存在する前記発明の構成の場
合、下流の水面が一定に保たれれば、上流すなわち水槽
内の水面の高さの高い部分でのオーバフローの流量は大
きめに制限され、高さの低い部分でのオーバフローの流
量は制限されることが少ない、下流の水面は樋の基準水
面雑持手段で堰の全周にわたり一定に保たれる。当然に
樋の断面積は充分に大きくするので、オーバフローする
流量の多少があっても、一定に保つ作用は害なわれない
In invention 1, the water surface of the gutter directly below the weir exhibits an action similar to that of the water surface downstream of a so-called submerged weir. in general,
There are two types of weir: a normal weir, in which the water level downstream of the weir is sufficiently lower than the weir peak, and the height of the downstream water level has no effect on the flow overflowing the weir, and a submerged weir, in which the downstream water level is higher than the weir peak. is well known. Although it is not a submerged weir, in the case of the configuration of the invention in which the downstream water surface exists directly below the weir, if the downstream water surface is kept constant, there will be no overflow in the upstream area, that is, the high water surface area in the tank. The flow rate of the weir is restricted to a large extent, and the overflow flow rate at the lower part of the weir is less restricted.The downstream water level is kept constant around the entire circumference of the weir by means of the standard water level control means in the gutter. Naturally, the cross-sectional area of the gutter is made sufficiently large, so even if there is some overflow of the flow rate, the effect of keeping it constant will not be impaired.

さて、水槽内を観察すると、堰が正しく水平に保たれて
も水槽内の様々な流体抵抗のために堰の全周にわたる水
流の動圧はかなり大きく差がある。
Now, when we observe the inside of the aquarium, even if the weir is kept correctly level, there is a fairly large difference in the dynamic pressure of the water flow all around the weir due to various fluid resistances within the aquarium.

その結果、水は堰の勝手な部分に多く流れ、他の部分に
少なく流れようとする。これは水槽内の流線と流速の偏
りとなって表れ、ウェハ毎の水洗効果の偏りを引き起こ
す原因となる。
As a result, more water will flow to certain parts of the weir and less water will flow to other parts. This appears as a deviation in the streamlines and flow velocity within the water tank, causing deviations in the washing effect for each wafer.

しかし発明の構成によれば、前述したように堰の直下の
樋の水面が前記偏りを補正するように作用し、ウェハ毎
の水洗効果を均一化する。
However, according to the configuration of the invention, as described above, the water surface of the gutter directly below the weir acts to correct the above-mentioned deviation, thereby making the washing effect uniform for each wafer.

なお実施例にも示すように、ピッチ3amの三角堰で、
18C1lX35a1角の水平断面を持つ水槽に111
/+++inの純水を流した場合、1個の三角堰当りの
流量は計算で5.2cc/secとなるが、堰のみねよ
りH=4css低く樋の中の水面を維持した時、堰の全
周にわたる流速が最も均一化し、ウェハ毎の水洗効果が
最も均一化した。もっとも、前記Hは槽の大きさ、流量
のほか、水槽内のウェハ、カセ7)等の流体抵抗によっ
て左右される。
As shown in the example, a triangular weir with a pitch of 3 am,
111 in an aquarium with a horizontal cross section of 18C1l x 35a1 corner
/+++in of pure water, the flow rate per one triangular weir is calculated to be 5.2cc/sec, but when the water level in the gutter is maintained H = 4css lower than the weir, the weir's flow rate is 5.2cc/sec. The flow velocity over the entire circumference was the most uniform, and the water washing effect for each wafer was the most uniform. However, the above-mentioned H is influenced by the size of the tank, the flow rate, and the fluid resistance of the wafers in the tank, the cassette 7), etc.

発明2において、純水の流れは開口部を持つ絞り板によ
ってウェハに集中するので、カセットやそのハンドル等
の補助部材で水槽断面の全領域にウェハを配置できない
場合に、純水は有効にウェハを水洗する。
In invention 2, the flow of pure water is concentrated on the wafer by the diaphragm plate having an opening, so that when the wafer cannot be placed in the entire area of the water tank cross section using the auxiliary member such as the cassette or its handle, the pure water can effectively concentrate on the wafer. Wash with water.

発明3において、純水の給水中には保持台を傾動してウ
ェハのデバイス面を下方に傾け、排水の時又は純水中か
らウェハを引上げる時にはデバイス面を上方に傾けるこ
とができ、後記する発明5の作用を生じさせる。
In invention 3, the device surface of the wafer can be tilted downward by tilting the holding table during supply of pure water, and the device surface can be tilted upward when draining water or pulling up the wafer from pure water, as described below. The effect of invention 5 is produced.

発明4においては、排水管から排水してからウェハを取
り出す水洗槽が構成され、排水の時にも発明2又は3の
作用を生じる。
In invention 4, a washing tank is configured to take out the wafer after draining water from the drain pipe, and the effect of invention 2 or 3 is produced even when draining water.

発明5の方法において、純水を給水管から供給してウェ
ハに対し純水が上方に流れる時には、ウェハのデバイス
面を下方に傾けるので、純水はデバイス面をよく洗う。
In the method of invention 5, when pure water is supplied from the water supply pipe and flows upward to the wafer, the device surface of the wafer is tilted downward, so that the pure water thoroughly washes the device surface.

排水管から排水するか、純水中からウェハを引上げるか
する時には、デバイス面を上方に傾けるので、この時に
も純水はデバイス面をよく洗い、デバイス面の水洗が反
デバイス面の水洗より良好になる。
When draining water from a drain pipe or pulling up a wafer from pure water, the device side is tilted upwards, so the pure water washes the device side thoroughly at this time as well, and washing the device side with water is faster than washing the opposite side of the device. Become good.

〔実施例〕〔Example〕

第1図は実施例の純水供給状態を示す断面図であって第
3図のI−I断面を示し、第2図は第1図で排水状態を
示す断面図であり、第3図は第1図の部分破断正面図、
第4図は第3図の平面図である。なお、第3図及び第4
図は純水とウェハのない状態を示す。
FIG. 1 is a cross-sectional view showing the state of pure water supply in the embodiment, taken along the line I-I in FIG. 3, FIG. 2 is a cross-sectional view showing the draining state in FIG. Partially cutaway front view of Figure 1;
FIG. 4 is a plan view of FIG. 3. In addition, Figures 3 and 4
The figure shows the state without pure water and wafer.

図において、水平断面が方形の水槽1の下部には多数の
細孔を持つ2列の給水管2(2a、2b)と弁3を持つ
排水管4とが接続され、上縁に堰5を設けて水洗槽を形
成する。この例では堰5は多数の三角堰からなって鋸歯
状をなし、またウェハ6の面を平行に配列して収納する
取手7a付のカセット7は水槽1に2個使用でき、給水
管2a。
In the figure, two rows of water supply pipes 2 (2a, 2b) with many pores and a drain pipe 4 with a valve 3 are connected to the lower part of a water tank 1 with a rectangular horizontal cross section, and a weir 5 is connected to the upper edge. to form a washing tank. In this example, the weir 5 is made up of a large number of triangular weirs and has a serrated shape, and two cassettes 7 with handles 7a for storing wafers 6 arranged in parallel can be used in the water tank 1, and a water supply pipe 2a.

2bは外部給水管8から分岐される。ここまでは従来の
技術によるものである。
2b is branched from the external water supply pipe 8. Up to this point, conventional techniques have been used.

さて発明1に係り、前記堰5の外周直下には樋11が張
り巡らされる。この樋11は樋の中の水面11aを水平
に維持するために基準水面雑持手段として水面維持管1
2が取り付けられる。樋11の水路断面は充分大きくす
るのがよいが、樋11の外周を前記水面11aの高さと
して、いわば第2の堰を設けてもよい。いずれにせよ水
面11aは堰5の直下に高さHを持つようにする。水面
11aは堰5のみねより高い、いわゆるもぐり堰ではな
いが、水面11aの高さHが堰5をオーバフローする流
れに全く影響しないとする通常の堰より高くして、水槽
1内からの流れの動圧によってより高く盛り上ってオー
バフローする流れを制限するが、より低くオーバフロー
する流れをそれほど制限しないようにする。
Now, according to the first invention, a gutter 11 is stretched just below the outer periphery of the weir 5. This gutter 11 has a water level maintenance pipe 1 as a reference water level holding means to maintain the water surface 11a in the gutter horizontally.
2 is attached. Although it is preferable that the waterway cross section of the gutter 11 be sufficiently large, the outer periphery of the gutter 11 may be set at the height of the water surface 11a, so as to provide a so-called second weir. In any case, the water surface 11a is made to have a height H directly below the weir 5. The water surface 11a is higher than the weir 5, so it is not a so-called speakeasy weir, but the height H of the water surface 11a is higher than a normal weir, which does not affect the flow that overflows the weir 5 at all, and the flow from inside the water tank 1. Dynamic pressure restricts flow that rises higher and overflows, but does not restrict flow that overflows lower as much.

実験によれば、高さ0.51ピツチ3aaの三角堰で、
18alX35(I11角の水平断面を持つ水槽に11
A/winの純水を流した場合、1個の三角堰当りの流
量は計算で5.2cc/secとなるが、堰のみねより
H=4(2)低く樋の中の水面を維持した時、堰の全周
にわたる流速が最も均一化し、ウェハ毎の水洗効果が最
も均一化した。もっとも、前記Hは楢の大きさ、流量の
ほか、水槽内のウェハ、カセット等の流体抵抗によって
左右される。
According to experiments, a triangular weir with a height of 0.51 pitch and 3 aa,
18alX35 (I11 in a water tank with a horizontal cross section of
When A/win pure water flows, the flow rate per triangular weir is calculated to be 5.2 cc/sec, but the water level in the gutter was maintained H = 4 (2) lower than the weir. At this time, the flow velocity over the entire circumference of the weir was most uniform, and the water washing effect for each wafer was most uniform. However, the above-mentioned H is influenced by the size of the oak, the flow rate, and the fluid resistance of the wafers, cassettes, etc. in the water tank.

次に発明2及び3に係り、前記カセット7は例えば軸と
軸受のような傾動手段13で傾動可能な保持台14に載
せられる。保持台14は複数のウェハ6の下方の領域に
位置する開口部15を持って絞り板の機能を兼ねる。保
持台14の傾動に対応して周辺を囲む閉鎖板16を設け
ると絞り効果は更によい。
Next, according to inventions 2 and 3, the cassette 7 is placed on a holding table 14 which can be tilted by a tilting means 13 such as a shaft and a bearing. The holding table 14 has an opening 15 located below the plurality of wafers 6, and also functions as a diaphragm plate. If a closing plate 16 is provided to surround the periphery in response to the tilting movement of the holding table 14, the diaphragm effect will be even better.

なお保持台を特に設けずに、カセット7が保持台を兼ね
るように水槽の上方から吊して傾動可能としたり、カセ
ット7の底面が絞り板を兼ねてもよい。給水管2a、2
bの細孔をウェハ全体に向くよう方向を変えたり、閉鎖
板工6と保持台14との水密性を良くして開口部15に
多数の細孔を設けて流体抵抗を持たせ、給水管の水がウ
ェハ全体に均一に及ぶようにしたりするとよい。
Note that without providing a holding stand, the cassette 7 may be hung from above the water tank so as to be tiltable so as to serve as a holding stand, or the bottom surface of the cassette 7 may also serve as an aperture plate. Water supply pipes 2a, 2
By changing the direction of the pores b so that they face the entire wafer, by improving the watertightness between the closing plate work 6 and the holding table 14, and by providing a large number of pores in the opening 15 to provide fluid resistance, the water supply pipe It is recommended that the water be uniformly distributed over the entire wafer.

前記実施例の水洗槽を使用するには、第1図のように給
水管2aから純水を供給して堰5からオーバフローさせ
る。保持台14はウェハ6のデバイス面6aが下方向に
傾くように傾動させておけば、デバイス面6aは純水の
動圧を受けてよ(水洗される。開口部15は複数のウェ
ハの領域のみにあって純水を有効にウェハ6に流し、カ
セット7の取手7aや、傾動のために水槽1の内壁近く
の空間に純水が無益に流れることがない。
To use the washing tank of the above embodiment, pure water is supplied from the water supply pipe 2a and overflowed from the weir 5 as shown in FIG. If the holding table 14 is tilted so that the device surface 6a of the wafer 6 is tilted downward, the device surface 6a will receive the dynamic pressure of pure water (washed with water). Therefore, the pure water can effectively flow onto the wafer 6, and the pure water will not flow unnecessarily into the handle 7a of the cassette 7 or into the space near the inner wall of the water tank 1 due to tilting.

水洗が充分進行したら、第2図に示すように弁3を開い
て排水管4から純水を排する。その時保持台14を逆向
きに傾動させると、下降する純水は再びウェハ6のデバ
イス面6aに動圧を与える。
When the water washing has sufficiently progressed, the valve 3 is opened as shown in FIG. 2 to drain the pure water from the drain pipe 4. At this time, when the holding table 14 is tilted in the opposite direction, the descending pure water applies dynamic pressure to the device surface 6a of the wafer 6 again.

排水を急激に行なうため、第3図によく表現されるよう
な排水抵抗の少ない排水管4を使うと排水中の先決効果
を高めることができる。
Since drainage is to be carried out rapidly, using a drain pipe 4 with low drainage resistance, as well represented in FIG. 3, can enhance the effect of preemption during drainage.

カスケード方式のように排水をしない場合でも、第2図
のように傾けてカセット7を引き上げれば、やはりデバ
イス面6aに純水の動圧が加わってよく水洗される。
Even if drainage is not performed as in the cascade system, if the cassette 7 is tilted and pulled up as shown in FIG. 2, dynamic pressure of pure water will be applied to the device surface 6a and the device will be thoroughly washed.

〔発明の効果〕〔Effect of the invention〕

この発明群の半導体ウェハの純水水洗槽及び水洗方法は
、 水槽の堰の直下に樋による水面を形成して堰をオーバフ
ローする流れを均一化して水槽内の流線と流速を均一化
したり、保持台等の開口部でウェハにのみ有効に純水が
流れるようにしたり、傾動手段によりウェハに対する純
水の流れ方向の変化に対応してデバイス面に常に純水の
動圧が加わるようにしたりするようにしたので、 いずれの発明も単独で又は組合せて使用することにより
、純水の水洗効率が向上し、高価な純水の使用量を少な
くし、処理時間を早くして、より清浄な半導体ウェハを
得ることができるという効果がある。
The purified water washing tank and washing method for semiconductor wafers of this invention group form a water surface by a gutter directly under the weir of the water tank to equalize the flow overflowing the weir, thereby making the streamlines and flow velocity in the water tank uniform, The openings in the holding table etc. allow pure water to flow effectively only towards the wafer, and the tilting means allows dynamic pressure of pure water to be constantly applied to the device surface in response to changes in the flow direction of the pure water relative to the wafer. By using each of the inventions alone or in combination, it is possible to improve the washing efficiency of pure water, reduce the amount of expensive pure water used, speed up the processing time, and achieve cleaner water. This has the effect that semiconductor wafers can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は実施例の純水供給状態を示す断面図であって第
3図のI−1断面を示し、第2図は第1図で排水状態を
示す断面図であり、第3図は第1図の部分破断正面図、
第4図は第3図の平面図である。 1・・・水槽、2a、2b・・・給水管、4・・・排水
管、5・・・堰、6・・・ウェハ、6a・・・デバイス
面、7・・・カセット、11・・・樋、12・・・水面
維持管、13・・・傾第1図 第3@ 第2図 第4図
FIG. 1 is a cross-sectional view showing the pure water supply state of the embodiment, and shows the I-1 cross section in FIG. 3, FIG. 2 is a cross-sectional view showing the draining state in FIG. 1, and FIG. Partially cutaway front view of Figure 1;
FIG. 4 is a plan view of FIG. 3. DESCRIPTION OF SYMBOLS 1... Water tank, 2a, 2b... Water supply pipe, 4... Drain pipe, 5... Weir, 6... Wafer, 6a... Device surface, 7... Cassette, 11...・Gutter, 12...Water level maintenance pipe, 13...Tilt Figure 1 Figure 3 @ Figure 2 Figure 4

Claims (1)

【特許請求の範囲】 1)水槽と、この水槽の下部の給水管と、前記水槽の上
縁の同一水平面に位置する堰とからなる半導体ウエハの
純水水洗槽において、 前記堰の外周直下を巡る樋と、この樋の水面を水平に維
持する基準水面雑持手段とを備えることを特徴とする半
導体ウエハの純水水洗槽。 2)水槽と、この水槽の下部の給水管と、前記水槽の上
縁の堰とからなる半導体ウエハの純水水洗槽において、 前記水槽内で面をほぼ垂直にして平行配列される複数の
ウエハの下方に配置される絞り板と、この絞り板に設け
られ前記複数のウエハの下方の領域に位置する開口部と
を備えることを特徴とする半導体ウエハの純水水洗槽。 3)水槽と、この水槽の下部の給水管と、前記水槽の上
縁の堰とからなる半導体ウエハの純水水洗槽において、 前記給水管の上方に配置され前記ウエハの面をほぼ垂直
に保持する保持台と、この保持台を傾動する傾動手段と
を備えることを特徴とする半導体ウエハの純水水洗槽。 4)請求項2又は3記載の半導体ウエハの純水水洗槽に
おいて、 前記水槽の下部に排水管を備えることを特徴とする半導
体ウエハの純水水洗槽。 5)水槽と、この水槽の下部の給水管と、前記水槽の上
縁の堰とからなる水洗層にウエハの面をほぼ垂直にして
浸漬し、純水を前記給水管から供給し、前記堰からオー
バフローさせて前記ウエハを水洗する半導体ウエハの水
洗方法において、前記ウエハに対して前記純水が上方に
流れる時には、前記ウエハのデバイス面を下方に傾け、
前記ウエハを前記水槽から取り出すのに際して、前記ウ
エハに対して前記純水が下方に流れる時には、前記デバ
イス面を上方に傾けることを特徴とする半導体ウエハの
水洗方法。
[Scope of Claims] 1) A pure water washing tank for semiconductor wafers consisting of a water tank, a water supply pipe at the bottom of the water tank, and a weir located on the same horizontal plane at the upper edge of the water tank, wherein A pure water washing tank for semiconductor wafers, comprising a circulating gutter and a reference water level holding means for maintaining the water surface of the gutter horizontally. 2) In a pure water washing tank for semiconductor wafers consisting of a water tank, a water supply pipe at the bottom of the tank, and a weir at the upper edge of the tank, a plurality of wafers are arranged in parallel with their surfaces substantially perpendicular in the tank. A deionized water washing tank for semiconductor wafers, comprising: a diaphragm plate disposed below; and an opening provided in the diaphragm plate and located in a region below the plurality of wafers. 3) In a pure water washing tank for semiconductor wafers consisting of a water tank, a water supply pipe at the bottom of the water tank, and a weir at the upper edge of the water tank, a tank is arranged above the water supply pipe and holds the surface of the wafer almost vertically. 1. A pure water washing tank for semiconductor wafers, comprising: a holding table for tilting the holding table; and a tilting means for tilting the holding table. 4) The pure water washing tank for semiconductor wafers according to claim 2 or 3, characterized in that a drain pipe is provided at a lower part of the water tank. 5) The wafer is immersed in a water washing layer consisting of a water tank, a water supply pipe at the lower part of the water tank, and a weir at the upper edge of the water tank with the surface of the wafer almost vertically, and pure water is supplied from the water supply pipe and the weir is connected to the weir. In the semiconductor wafer washing method of washing the wafer with water overflowing from the wafer, when the pure water flows upward with respect to the wafer, the device surface of the wafer is tilted downward;
A method for washing a semiconductor wafer with water, characterized in that when the wafer is taken out from the water tank, the device surface is tilted upward when the pure water flows downward with respect to the wafer.
JP14349090A 1990-06-01 1990-06-01 Pure water washing vessel for semiconductor wafer and washing thereof Pending JPH0437131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14349090A JPH0437131A (en) 1990-06-01 1990-06-01 Pure water washing vessel for semiconductor wafer and washing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14349090A JPH0437131A (en) 1990-06-01 1990-06-01 Pure water washing vessel for semiconductor wafer and washing thereof

Publications (1)

Publication Number Publication Date
JPH0437131A true JPH0437131A (en) 1992-02-07

Family

ID=15339922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14349090A Pending JPH0437131A (en) 1990-06-01 1990-06-01 Pure water washing vessel for semiconductor wafer and washing thereof

Country Status (1)

Country Link
JP (1) JPH0437131A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485861A (en) * 1993-10-19 1996-01-23 Dan Science Co., Ltd. Cleaning tank
US5839460A (en) * 1997-11-13 1998-11-24 Memc Electronic Materials, Inc. Apparatus for cleaning semiconductor wafers
US5885360A (en) * 1995-12-18 1999-03-23 Lg Semicon Co., Ltd. Semiconductor wafer cleaning apparatus
US6240938B1 (en) * 1996-05-29 2001-06-05 Steag Microtech Gmbh Device for treating substrates in a fluid container
US6386213B1 (en) * 1999-08-20 2002-05-14 Mosel Vitelic Inc. Plate-tilting apparatus
CN104902592A (en) * 2015-05-07 2015-09-09 合肥彩虹蓝光科技有限公司 High-temperature quartz heating trough and manufacturing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485861A (en) * 1993-10-19 1996-01-23 Dan Science Co., Ltd. Cleaning tank
US5885360A (en) * 1995-12-18 1999-03-23 Lg Semicon Co., Ltd. Semiconductor wafer cleaning apparatus
US6240938B1 (en) * 1996-05-29 2001-06-05 Steag Microtech Gmbh Device for treating substrates in a fluid container
US5839460A (en) * 1997-11-13 1998-11-24 Memc Electronic Materials, Inc. Apparatus for cleaning semiconductor wafers
US6386213B1 (en) * 1999-08-20 2002-05-14 Mosel Vitelic Inc. Plate-tilting apparatus
CN104902592A (en) * 2015-05-07 2015-09-09 合肥彩虹蓝光科技有限公司 High-temperature quartz heating trough and manufacturing method

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