JPH064830A - Thin-film magnetic head - Google Patents

Thin-film magnetic head

Info

Publication number
JPH064830A
JPH064830A JP18283192A JP18283192A JPH064830A JP H064830 A JPH064830 A JP H064830A JP 18283192 A JP18283192 A JP 18283192A JP 18283192 A JP18283192 A JP 18283192A JP H064830 A JPH064830 A JP H064830A
Authority
JP
Japan
Prior art keywords
film
terminal
coil
magnetic head
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18283192A
Other languages
Japanese (ja)
Other versions
JP2722948B2 (en
Inventor
Shinsaku Saito
信作 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP18283192A priority Critical patent/JP2722948B2/en
Publication of JPH064830A publication Critical patent/JPH064830A/en
Application granted granted Critical
Publication of JP2722948B2 publication Critical patent/JP2722948B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Magnetic Heads (AREA)

Abstract

PURPOSE:To prevent the degradation in electrical reliability by the generation of a crack in the lower part of a terminal. CONSTITUTION:A terminal pedestal film 2 consisting of a photoresist is formed in the part on a lower insulating film 17 where the terminal 4 is formed. This terminal pedestal film 2 is hardened by a heating treatment, by which the sectional shape thereof is made into a trapezoidal shape. An NiFe plating film 3 is formed on a coil leader electrode 1 and the terminal pedestal film 2 in such a manner that the coil leader electrode 1 and the terminal 4 are electrically connected. The terminal 4 is formed on the NiFe plating film 3 of the part formed with the terminal pedestal film 2, by which the plating film thickness of the terminal is reduced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は薄膜磁気ヘッドに関し、
特に薄膜磁気ヘッドを外部装置と接続する端子部の信頼
性の向上に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head,
In particular, it relates to improvement of reliability of a terminal portion for connecting the thin film magnetic head to an external device.

【0002】[0002]

【従来の技術】図5は従来の薄膜磁気ヘッドの正面図、
図6はこの薄膜磁気ヘッドの主要部の平面図、図7は図
6のI―I線断面図、図8は図5のII―II線断面図
である。各図で同一の部分を示すものは同一の符号を付
してある。図5において、10は例えば磁気ディスク等
の磁性媒体、11は薄膜磁気ヘッドのコアを構成する上
部磁性膜、12は上部磁性膜11をも含む電磁変換素子
部、13は後述するコイル引き出し電極の酸化を防止す
るためにその表面に形成されるNiFeメッキ膜、14
は薄膜磁気ヘッドを図示しない外部装置に接続するため
の端子、15は薄膜磁気ヘッドを保護する保護膜であ
る。図6において、16は薄膜磁気ヘッドを固定して保
持及び移動等を行うための基板、17は基板16上に形
成される磁性膜等との絶縁を目的とする下部絶縁膜、1
8は上部磁性膜11と共に薄膜磁気ヘッドのコアを構成
する下部磁性膜である。
2. Description of the Related Art FIG. 5 is a front view of a conventional thin film magnetic head,
6 is a plan view of the main part of this thin film magnetic head, FIG. 7 is a sectional view taken along the line II of FIG. 6, and FIG. 8 is a sectional view taken along the line II-II of FIG. In each figure, the same parts are designated by the same reference numerals. In FIG. 5, 10 is a magnetic medium such as a magnetic disk, 11 is an upper magnetic film that constitutes the core of a thin film magnetic head, 12 is an electromagnetic conversion element section that also includes the upper magnetic film 11, and 13 is a coil extraction electrode described later. NiFe plating film formed on the surface of the film to prevent oxidation, 14
Is a terminal for connecting the thin film magnetic head to an external device (not shown), and 15 is a protective film for protecting the thin film magnetic head. In FIG. 6, 16 is a substrate for fixing and holding and moving the thin film magnetic head, 17 is a lower insulating film for the purpose of insulating from a magnetic film formed on the substrate 16, 1
Reference numeral 8 is a lower magnetic film that constitutes the core of the thin film magnetic head together with the upper magnetic film 11.

【0003】次に、図7においては図面右方向を上方向
として以後説明する。19は下部コイル絶縁膜、20は
下部コイル絶縁膜19上にリング状に形成される導電材
からなるコイル、21は下部コイル絶縁膜19及びコイ
ル20上に形成される上部コイル絶縁膜である。以上の
下部磁性膜18、下部コイル絶縁膜19、コイル20、
上部コイル絶縁膜21、上部磁性膜11から構成されて
いる電磁変換素子部12(図5及び図6)が薄膜磁気ヘ
ッドの主要部である。図8において、22はコイル20
と端子14とを接続するためのコイル引き出し電極であ
る。23は端子14の下に生じる空洞であり、後で詳細
に説明する。
Next, in FIG. 7, the rightward direction of the drawing will be referred to as the upward direction, and the following description will be given. Reference numeral 19 is a lower coil insulating film, 20 is a coil made of a conductive material formed in a ring shape on the lower coil insulating film 19, and 21 is an upper coil insulating film formed on the lower coil insulating film 19 and the coil 20. The above lower magnetic film 18, lower coil insulating film 19, coil 20,
The electromagnetic conversion element portion 12 (FIGS. 5 and 6) composed of the upper coil insulating film 21 and the upper magnetic film 11 is the main part of the thin film magnetic head. In FIG. 8, 22 is a coil 20.
And a coil lead-out electrode for connecting the terminal 14 to the terminal 14. Reference numeral 23 denotes a cavity formed under the terminal 14, which will be described in detail later.

【0004】まず、このような従来の薄膜磁気ヘッドの
製造工程を説明する。下部絶縁膜17上にNiFeメッ
キ膜からなる下部磁性膜18を形成した後、フォトレジ
ストからなる下部コイル絶縁膜19をフォトリソグラフ
ィ工程により下部磁性膜18上及びその右側方に形成す
る。加熱処理をして下部コイル絶縁膜19を固くした
後、その上にCuメッキ工程によりコイル20を下部磁
性膜18と上部磁性膜11とからなるコアの回りに巻い
たような形状に形成する。コイル20と同時にコイル引
き出し電極22をコイル20と端子14とを電気的に接
続するような形に形成する。
First, a manufacturing process of such a conventional thin film magnetic head will be described. After forming the lower magnetic film 18 made of a NiFe plating film on the lower insulating film 17, a lower coil insulating film 19 made of a photoresist is formed on the lower magnetic film 18 and on the right side thereof by a photolithography process. After the heat treatment is performed to harden the lower coil insulating film 19, a coil 20 is formed on the lower coil insulating film 19 to form a coil 20 around the core formed of the lower magnetic film 18 and the upper magnetic film 11. Simultaneously with the coil 20, the coil lead-out electrode 22 is formed so as to electrically connect the coil 20 and the terminal 14.

【0005】次に、フォトレジストからなる上部コイル
絶縁膜21をフォトリソグラフィ工程によりコイル20
上に形成し、加熱処理をして固くした後、上部コイル絶
縁膜21上にNiFeメッキ膜からなる上部磁性膜11
を形成する。コイル引き出し電極22上にその酸化を防
ぐためのNiFeメッキ膜13を上部磁性膜11と同時
に形成する。なお、下部磁性膜18の左端と上部磁性膜
11の左端との間に図示しないギャップ膜をスパッタ工
程によって3000〜4000Åの厚さで形成してお
り、これが薄膜磁気ヘッドのコアのギャップである。
Next, the upper coil insulating film 21 made of photoresist is formed on the coil 20 by a photolithography process.
After being formed on the upper coil insulating film 21 and hardened by heat treatment, the upper magnetic film 11 made of a NiFe plating film is formed on the upper coil insulating film 21.
To form. A NiFe plating film 13 for preventing the oxidation is formed on the coil extraction electrode 22 at the same time as the upper magnetic film 11. A gap film (not shown) having a thickness of 3000 to 4000 Å is formed between the left end of the lower magnetic film 18 and the left end of the upper magnetic film 11 by a sputtering process, and this is the gap of the core of the thin film magnetic head.

【0006】図8に示す端子部においては、NiFeメ
ッキ膜13上にフォトレジストで端子14の形成部を除
いて全面を覆ったパターンを15μmの厚さで形成し、
端子14をCuメッキ工程により電磁変換素子部12と
同等以上の厚さになるように50〜60μmの厚さに形
成する。形成の際、端子14の断面形状は上部が左右に
広がる傘状になる。その理由は、フォトレジストの厚さ
までは垂直に端子14を形成できるが、フォトレジスト
以上の厚さの部分は端子14がパターン上にはみ出して
しまうためである。フォトレジストを除去した後、保護
膜15を電磁変換素子部12上をすべて覆うように形成
する。その後、端子14が保護膜15の表面上に露出す
るまで表面を研磨して薄膜磁気ヘッドが完成する。
In the terminal portion shown in FIG. 8, a pattern having a thickness of 15 μm is formed on the NiFe plated film 13 by photoresist so as to cover the entire surface except the portion where the terminal 14 is formed.
The terminal 14 is formed in a thickness of 50 to 60 μm by a Cu plating process so as to have a thickness equal to or greater than that of the electromagnetic conversion element portion 12. When formed, the cross-sectional shape of the terminal 14 becomes an umbrella shape in which the upper portion spreads to the left and right. The reason for this is that the terminals 14 can be formed vertically depending on the thickness of the photoresist, but the terminals 14 extend over the pattern in a portion having a thickness greater than that of the photoresist. After removing the photoresist, the protective film 15 is formed so as to cover the entire electromagnetic conversion element portion 12. After that, the surface is polished until the terminal 14 is exposed on the surface of the protective film 15, and the thin film magnetic head is completed.

【0007】このような薄膜磁気ヘッドにおいて磁気記
録時は、端子14に接続されたコイル20に図示しない
外部装置から交流電流を流してコアのギャップから磁界
を発生し、図7の矢印方向に移動する磁性媒体10上に
電流変化を残留磁束密度の変化として記録する。磁気再
生時は、磁性媒体10の磁束の変化がコイル20に微弱
な誘導電圧として発生し、発生した誘導電圧を端子14
から図示しない外部装置に出力する。
During magnetic recording in such a thin film magnetic head, an alternating current is passed from an external device (not shown) to the coil 20 connected to the terminal 14 to generate a magnetic field from the gap of the core and move in the direction of the arrow in FIG. The change in current is recorded on the magnetic medium 10 as the change in residual magnetic flux density. During magnetic reproduction, a change in magnetic flux of the magnetic medium 10 is generated as a weak induced voltage in the coil 20, and the generated induced voltage is applied to the terminal 14
To an external device (not shown).

【0008】[0008]

【発明が解決しようとする課題】保護膜15は、磁性媒
体10と対向する面の加工等により保護膜15のみが偏
って削れて、磁性媒体10と対向する面の保護膜15の
削れた部分にゴミが溜まるのを防ぐため、基板16と同
等の固さが必要とされる。よって、保護膜15はアルミ
ナからなり、スパッタ工程によって垂直方向に形成され
る割合が高く左右に広がらないので、傘の下部に形成さ
れることがない。その結果、傘の下部に空洞23ができ
る。
In the protective film 15, only the protective film 15 is unevenly shaved due to processing of the surface facing the magnetic medium 10 or the like, and the scraped portion of the protective film 15 on the surface facing the magnetic medium 10 is removed. In order to prevent dust from accumulating, the same hardness as the substrate 16 is required. Therefore, since the protective film 15 is made of alumina and has a high rate of being formed in the vertical direction by the sputtering process and does not spread to the left and right, it is not formed under the umbrella. The result is a cavity 23 at the bottom of the umbrella.

【0009】端子14を保護膜15の表面上に出すため
の上記の研磨工程及び取扱い等による外部からの衝撃が
端子14に加えられた場合、空洞23の下部付近のコイ
ル引き出し電極22とNiFeメッキ膜13とに力が加
えられる。基板16、下部絶縁膜17、保護膜15が固
く、かつコイル引き出し電極22、NiFeメッキ膜1
3が各々4μmと薄いので、この力によってコイル引き
出し電極22とNiFeメッキ膜13とにクラックが発
生する。したがって、コイル引き出し電極22と端子1
4との電気的接続が不安定になり、交流電流と誘導電圧
とからなる信号の入出力の信頼性が十分ではなかった。
When an external impact is applied to the terminal 14 by the above-mentioned polishing process and handling for exposing the terminal 14 on the surface of the protective film 15, the coil lead electrode 22 near the bottom of the cavity 23 and NiFe plating. A force is applied to the membrane 13. The substrate 16, the lower insulating film 17, and the protective film 15 are hard, and the coil lead electrode 22 and the NiFe plating film 1 are provided.
Since 3 is as thin as 4 μm, a crack is generated in the coil lead electrode 22 and the NiFe plating film 13 by this force. Therefore, the coil lead electrode 22 and the terminal 1
The electrical connection with No. 4 became unstable, and the reliability of the input / output of the signal composed of the alternating current and the induced voltage was not sufficient.

【0010】[0010]

【課題を解決するための手段】本発明は、下部絶縁膜上
に形成される端子台座膜と、端子台座膜上にまで延びる
ような形状でコイル引き出し電極上に形成されるNiF
eメッキ膜と、端子台座膜が形成される部分のNiFe
メッキ膜上に形成される端子とを有することを特徴とす
る。
According to the present invention, a terminal pedestal film formed on a lower insulating film and a NiF formed on a coil lead electrode in a shape extending to the terminal pedestal film.
e-plated film and NiFe in the part where the terminal pedestal film is formed
And a terminal formed on the plated film.

【0011】[0011]

【作用】本発明によれば、薄膜磁気ヘッドの端子の下層
に絶縁膜を形成して所望の高さを得ることによって端子
のメッキ厚を薄くすることができるので、端子下部での
空洞の発生を防ぐことができる。
According to the present invention, the plating thickness of the terminal can be reduced by forming an insulating film under the terminal of the thin film magnetic head to obtain a desired height, so that a cavity is formed in the lower portion of the terminal. Can be prevented.

【0012】[0012]

【実施例】以下本発明の実施例を図面を用いて説明す
る。図1は本発明の一実施例を示す薄膜磁気ヘッドの端
子部の断面図である。電磁変換素子部12については従
来例の図6、図7と同様である。1はコイル引き出し電
極、2は端子の厚さを薄くするために所定の高さに形成
されるフォトレジストからなる端子台座膜、3は上部磁
性膜11と同時に形成されるNiFeメッキ膜、4は端
子である。従来例を示す図8と同様の部分には同一の符
号が付してある。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a terminal portion of a thin film magnetic head showing an embodiment of the present invention. The electromagnetic conversion element portion 12 is the same as in the conventional example shown in FIGS. Reference numeral 1 is a coil extraction electrode, 2 is a terminal pedestal film made of photoresist formed at a predetermined height to reduce the thickness of the terminal, 3 is a NiFe plating film formed at the same time as the upper magnetic film 11, and 4 is It is a terminal. The same parts as those in FIG. 8 showing the conventional example are designated by the same reference numerals.

【0013】まず、本発明の薄膜磁気ヘッドの端子部の
製造工程を説明する。コイル20と同時に形成されるコ
イル引き出し電極1は図8の例と異なり、端子4の下層
には形成されない。この理由は、端子4の下層まで形成
されても端子台座膜2がその上部に形成されるので、コ
イル引き出し電極1が隠されてNiFeメッキ膜3と電
気的に接続されることがないためである。
First, the manufacturing process of the terminal portion of the thin film magnetic head of the present invention will be described. Unlike the example of FIG. 8, the coil lead electrode 1 formed simultaneously with the coil 20 is not formed in the lower layer of the terminal 4. This is because the terminal pedestal film 2 is formed on the lower layer of the terminal 4 even if the lower layer of the terminal 4 is formed, so that the coil lead electrode 1 is not hidden and electrically connected to the NiFe plated film 3. is there.

【0014】上部コイル絶縁膜21を形成した後、端子
台座膜2を下部絶縁膜17上の端子4の下層となる部分
にレジストを塗布してフォトレジスト露光技術によって
形成する。フォトレジストの膜厚は少なくとも10〜1
5μmにする。前記工程で形成された端子台座膜2を2
00〜300℃の温度で加熱処理をして固くする。この
ときに端子台座膜2の断面形状は、加熱処理されること
により下部が広がった台形状になる。
After the upper coil insulating film 21 is formed, the terminal pedestal film 2 is formed by applying a resist on the lower insulating film 17 as a lower layer of the terminal 4 by a photoresist exposure technique. Photoresist film thickness is at least 10-1
5 μm. 2 of the terminal pedestal film 2 formed in the above process
Harden by heat treatment at a temperature of 00 to 300 ° C. At this time, the cross-sectional shape of the terminal pedestal film 2 becomes a trapezoidal shape in which the lower part is expanded by the heat treatment.

【0015】コイル引き出し電極1及び端子台座膜2上
にNiFeメッキ膜3を上部磁性膜11の形成と同時
に、コイル引き出し電極1と端子4とを電気的に接続す
るような形状に形成する。端子台座膜2を形成した部分
のNiFeメッキ膜3上に端子のフォトレジストパター
ンをフォトレジスト露光技術で形成し、Cuメッキによ
り端子4を形成する。端子のフォトレジストパターンの
膜厚は15μm以上とし、端子4のCuメッキ膜厚は端
子台座膜2の厚さの分だけ少なくてすむため20μm程
度とする。端子4がNiFeメッキ膜3の上に形成され
ることによりコイル引き出し電極1と端子4とが電気的
に接続される。フォトレジストパターンを除去した後、
保護膜17をその上から形成する。完成した薄膜磁気ヘ
ッドは端子4のメッキ膜厚が薄く、かつ端子台座膜2の
断面形状が台形なので、端子4下部及び端子台座膜2側
面での空洞の発生を防ぐことができる。
The NiFe plating film 3 is formed on the coil lead electrode 1 and the terminal pedestal film 2 at the same time as the formation of the upper magnetic film 11 and in a shape that electrically connects the coil lead electrode 1 and the terminal 4. A photoresist pattern of a terminal is formed on the NiFe plated film 3 where the terminal pedestal film 2 is formed by a photoresist exposure technique, and a terminal 4 is formed by Cu plating. The film thickness of the photoresist pattern of the terminal is set to 15 μm or more, and the Cu plating film thickness of the terminal 4 is set to about 20 μm because it can be reduced by the thickness of the terminal pedestal film 2. By forming the terminal 4 on the NiFe plating film 3, the coil lead electrode 1 and the terminal 4 are electrically connected. After removing the photoresist pattern,
The protective film 17 is formed from above. In the completed thin film magnetic head, the plating film thickness of the terminal 4 is thin and the sectional shape of the terminal pedestal film 2 is trapezoidal.

【0016】図2は本発明の他の実施例を示す薄膜磁気
ヘッドの端子部の断面図である。この実施例は、図1の
実施例の薄膜磁気ヘッドと比べてNiFeメッキ膜3が
端子台座膜2をすべて覆う構造となっている。この場合
は端子台座膜2の台形状の側面における空洞の発生を更
に抑えられるので、より信頼性を向上することができ
る。
FIG. 2 is a sectional view of a terminal portion of a thin film magnetic head showing another embodiment of the present invention. This embodiment has a structure in which the NiFe plating film 3 entirely covers the terminal pedestal film 2 as compared with the thin film magnetic head of the embodiment of FIG. In this case, the generation of cavities on the trapezoidal side surface of the terminal pedestal film 2 can be further suppressed, so that the reliability can be further improved.

【0017】図3は本発明の他の実施例を示す薄膜磁気
ヘッドの端子部の断面図である。下部磁性膜18の形成
までは図7と同工程であるが、第1の端子台座膜2aを
下部コイル絶縁膜19と同時に形成する。加熱処理をし
た後、コイル引きだし電極1を図1の実施例と同様に形
成する。次に、第2の端子台座膜2bを上部コイル絶縁
膜21と同時に形成する。再び加熱処理した後の工程は
図1の実施例と同様である。本実施例では、第2の端子
台座膜2bは第1の端子台座膜2aより小さく、その各
々が台形状に形成されており、第1の端子台座膜2a及
び第2の端子台座膜2bを合わせた全体としても台形状
になって図1の例と同様の効果を得ている。また、第1
の絶縁膜2aと第2の絶縁膜2bとを、下部コイル絶縁
膜19と上部コイル絶縁膜21と各々同時に形成するこ
とにより、図1のように絶縁膜2の形成及び加熱処理を
新規の独立した工程とする必要がなく、図1の実施例と
比べて工程数を減らすことができる。
FIG. 3 is a sectional view of a terminal portion of a thin film magnetic head showing another embodiment of the present invention. The steps up to the formation of the lower magnetic film 18 are the same as those in FIG. 7, but the first terminal pedestal film 2a is formed simultaneously with the lower coil insulating film 19. After the heat treatment, the coil extraction electrode 1 is formed in the same manner as in the embodiment shown in FIG. Next, the second terminal pedestal film 2b is formed simultaneously with the upper coil insulating film 21. The steps after the heat treatment are the same as those in the embodiment of FIG. In the present embodiment, the second terminal pedestal film 2b is smaller than the first terminal pedestal film 2a, each of which is formed in a trapezoidal shape, and the first terminal pedestal film 2a and the second terminal pedestal film 2b are formed. The combined shape is trapezoidal, and the same effect as the example of FIG. 1 is obtained. Also, the first
By simultaneously forming the insulating film 2a and the second insulating film 2b of the lower coil insulating film 19 and the upper coil insulating film 21 respectively, the formation of the insulating film 2 and the heat treatment as shown in FIG. The number of steps can be reduced as compared with the embodiment of FIG.

【0018】図4は本発明の他の実施例を示す薄膜磁気
ヘッドの端子部の断面図である。図2と同様に、第1の
端子台座膜2a,第2の端子台座膜2bをすべてNiF
eメッキ膜3で覆う構造であり、図3の構造に比べてよ
り信頼性を向上することができる。
FIG. 4 is a sectional view of a terminal portion of a thin film magnetic head showing another embodiment of the present invention. As in FIG. 2, the first terminal pedestal film 2a and the second terminal pedestal film 2b are all made of NiF.
Since the structure is covered with the e-plated film 3, the reliability can be further improved as compared with the structure of FIG.

【0019】[0019]

【発明の効果】以上の説明のように本発明によれば、端
子下部の空洞の発生を防ぐことができるので、外部から
端子に衝撃が加えられてもNiFeメッキ膜及びコイル
引き出し電極にクラックが発生せず、交流電流と誘導電
圧とからなる信号の入出力の信頼性が高い薄膜磁気ヘッ
ドができる。
As described above, according to the present invention, it is possible to prevent the formation of a cavity under the terminal. Therefore, even if an external impact is applied to the terminal, the NiFe plating film and the coil lead-out electrode are not cracked. A thin film magnetic head that does not generate and has high reliability of input / output of a signal composed of an alternating current and an induced voltage can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る薄膜磁気ヘッドの一実施例におけ
る端子部の断面図である。
FIG. 1 is a sectional view of a terminal portion in an embodiment of a thin film magnetic head according to the present invention.

【図2】本発明に係る薄膜磁気ヘッドの他の実施例にお
ける端子部の断面図である。
FIG. 2 is a sectional view of a terminal portion in another embodiment of the thin film magnetic head according to the present invention.

【図3】本発明に係る薄膜磁気ヘッドの他の実施例にお
ける端子部の断面図である。
FIG. 3 is a sectional view of a terminal portion in another embodiment of the thin film magnetic head according to the present invention.

【図4】本発明に係る薄膜磁気ヘッドの他の実施例にお
ける端子部の断面図である。
FIG. 4 is a sectional view of a terminal portion in another embodiment of the thin film magnetic head according to the present invention.

【図5】従来例の薄膜磁気ヘッドの正面図である。FIG. 5 is a front view of a conventional thin film magnetic head.

【図6】従来例の薄膜磁気ヘッドの主要部の平面図であ
る。
FIG. 6 is a plan view of a main part of a conventional thin film magnetic head.

【図7】図6のI―I線断面図である。7 is a cross-sectional view taken along the line II of FIG.

【図8】図5のII―II線断面図である。8 is a sectional view taken along the line II-II of FIG.

【符号の説明】[Explanation of symbols]

1 コイル引き出し電極 2 端子台座膜 2a 第1の端子台座膜 2b 第2の端子台座膜 3 NiFeメッキ膜 4 端子 10 磁性媒体 11 上部磁性膜 12 電磁変換素子部 15 保護膜 16 基板 17 下部絶縁膜 18 下部磁性膜 19 下部コイル絶縁膜 20 コイル 21 上部コイル絶縁膜 DESCRIPTION OF SYMBOLS 1 coil extraction electrode 2 terminal pedestal film 2a first terminal pedestal film 2b second terminal pedestal film 3 NiFe plating film 4 terminal 10 magnetic medium 11 upper magnetic film 12 electromagnetic transducer element 15 protective film 16 substrate 17 lower insulating film 18 Lower magnetic film 19 Lower coil insulating film 20 Coil 21 Upper coil insulating film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 基板の下部絶縁膜上に形成される下部磁
性膜と、前記下部磁性膜上に形成される下部コイル絶縁
膜と、前記下部コイル絶縁膜上に形成されるコイルと、
前記コイルと接続されるコイル引き出し電極と、前記コ
イル上に形成される上部コイル絶縁膜と、前記上部コイ
ル絶縁膜上に形成される上部磁性膜と、前記各構成要素
を保護する保護膜とを有する薄膜磁気ヘッドにおいて、 前記下部絶縁膜上に形成される端子台座膜と、前記端子
台座膜上にまで延びるような形状で前記コイル引き出し
電極上に形成されるNiFeメッキ膜と、前記端子台座
膜が形成される部分の前記NiFeメッキ膜上に形成さ
れる端子とを有することを特徴とする薄膜磁気ヘッド。
1. A lower magnetic film formed on a lower insulating film of a substrate, a lower coil insulating film formed on the lower magnetic film, and a coil formed on the lower coil insulating film.
A coil lead electrode connected to the coil, an upper coil insulating film formed on the coil, an upper magnetic film formed on the upper coil insulating film, and a protective film protecting each of the components. A thin film magnetic head having the terminal pedestal film formed on the lower insulating film, a NiFe plating film formed on the coil lead electrode in a shape extending to the terminal pedestal film, and the terminal pedestal film. A thin film magnetic head having a terminal formed on the NiFe plating film in a portion where the film is formed.
【請求項2】 請求項1記載の薄膜磁気ヘッドにおい
て、前記端子台座膜は前記下部絶縁膜上に形成される第
1の端子台座膜と、前記第1の端子台座膜上に形成され
る第2の端子台座膜とからなることを特徴とする薄膜磁
気ヘッド。
2. The thin film magnetic head according to claim 1, wherein the terminal pedestal film is a first terminal pedestal film formed on the lower insulating film, and a first terminal pedestal film is formed on the first terminal pedestal film. 2. A thin film magnetic head comprising a terminal base film of 2.
JP18283192A 1992-06-18 1992-06-18 Thin film magnetic head Expired - Fee Related JP2722948B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18283192A JP2722948B2 (en) 1992-06-18 1992-06-18 Thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18283192A JP2722948B2 (en) 1992-06-18 1992-06-18 Thin film magnetic head

Publications (2)

Publication Number Publication Date
JPH064830A true JPH064830A (en) 1994-01-14
JP2722948B2 JP2722948B2 (en) 1998-03-09

Family

ID=16125234

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18283192A Expired - Fee Related JP2722948B2 (en) 1992-06-18 1992-06-18 Thin film magnetic head

Country Status (1)

Country Link
JP (1) JP2722948B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6848166B2 (en) * 2002-05-28 2005-02-01 Hitachi Global Storage Technologies Method of protecting the pole piece of a magnetic head during the ion mill patterning of the yoke
US7207100B2 (en) 2001-10-10 2007-04-24 Tdk Corporation Method of manufacturing a magnetic head

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7207100B2 (en) 2001-10-10 2007-04-24 Tdk Corporation Method of manufacturing a magnetic head
US6848166B2 (en) * 2002-05-28 2005-02-01 Hitachi Global Storage Technologies Method of protecting the pole piece of a magnetic head during the ion mill patterning of the yoke
US7046481B2 (en) 2002-05-28 2006-05-16 Hitachi Global Storage Technologies Netherlands B.V. Magnetic head having a laminated yoke layer with protected pole piece and disk drive containing the same
US7174623B2 (en) 2002-05-28 2007-02-13 Hitachi Global Storage Technologies Netherlands B.V. Method of providing protection to the pole piece of a magnetic head during its manufacture with use of a selectively etchable material

Also Published As

Publication number Publication date
JP2722948B2 (en) 1998-03-09

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