JPH0646632B2 - Spin-on-glass firing method and device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Outline] A decompression chamber having a stage A on which a wafer having a spin-on-glass layer is mounted, and a stage B on which the wafer is mounted.
Using a spin-on-glass firing device having a firing chamber equipped with a, and a gate valve separating the decompression chamber and the firing chamber, spin-on-glass firing capable of removing organic components contained in the spin-on-glass layer Method.

[Industrial application field]

The present invention relates to a semiconductor device manufacturing method and device, and more particularly to a spin-on-glass layer sintering method and device.

In the process of manufacturing a semiconductor device, the spin-on-glass layer used for flattening the surface of the substrate is heated rapidly in the early stage of the sintering process. There remains a problem that the organic components are left behind and vaporized and separated in the subsequent heating step.

Under the circumstances as described above, there is a demand for a spin-on-glass firing method and apparatus in which organic components do not remain inside the spin-on-glass layer.

[Conventional technology]

The conventional spin-on-glass firing method is a horizontal or vertical electric furnace in which nitrogen or oxygen at atmospheric pressure is introduced from the gas introduction hole 21a to create a nitrogen or oxygen atmosphere in the furnace core tube 21 as shown in FIG. Using this method, the wafer 9 having the spin-on-glass layer 10 is set in the furnace core tube 21 and heated by the heater 28 to be fired.

When the furnace temperature is 450 ° C., when the wafer 9 is inserted at a normal wafer loading speed, the furnace temperature once becomes 400 ° C., and the furnace temperature is heated at 5 to 20 ° C./min to 450 ° C.

When heated at such a heating rate, the organic components derived from the solvent of spin-on-glass remain in the spin-on-glass layer 10.

[Problems to be solved by the invention]

The problem with the conventional spin-on-glass firing method described above is that since the temperature rising rate at the time of heating is high, the surface before the organic component due to the solvent contained in the spin-on glass is released. The organic component remains in the spin-on-glass layer as it solidifies.

Infrared absorption spectrum analysis after the heat treatment confirmed that the organic solvent remained in the spin-on-glass layer.

SUMMARY OF THE INVENTION The present invention has an object to provide a spin-on-glass firing method and apparatus capable of easily and easily firing spin-on-glass in order to solve the above problems.

[Means for solving problems]

The above problems include a stage A on which a wafer having a spin-on-glass layer is placed, a decompression chamber for volatilizing a solvent in the spin-on glass, and a baking chamber including a stage B on which the wafer is placed. According to the present invention, which is provided with a gate valve for partitioning the decompression chamber and the firing chamber, and is capable of transferring the wafer after the solvent volatilization treatment from the decompression chamber to the firing chamber without exposing the wafer to the atmosphere through the gate valve. It is solved by a firing method using a spin-on-glass firing apparatus.

[Action]

That is, in the present invention, a wafer having a spin-on-glass layer is loaded into the decompression chamber and placed on the stage A,
When the air in the depressurized chamber is exhausted to create a depressurized atmosphere in the chamber, the organic components contained in the spin-on-glass layer are released from the spin-on-glass layer into the chamber and discharged.

After that, the pressure inside the decompression chamber and the baking chamber are set to the same high vacuum, the wafer is loaded into the baking chamber through the gate valve, the wafer is placed on the stage B, and the wafer is heated by the heater. Since the organic component inside is removed, it is possible to sinter the spin-on-glass layer without containing the organic component.

〔Example〕

 An embodiment of the present invention will be described below with reference to FIG.

As shown in FIG. 1, the decompression chamber 1 and the firing chamber 2 are partitioned by a gate valve 5, and a stage A is provided in each chamber.
6 and a stage B7 are provided so that the wafer 9 can be placed thereon, and the wafer 9 can be moved by the wafer transfer means 12 between them.

The decompression chamber 1 and the firing chamber 2 are provided with vacuum exhaust holes 1a and 2a and nitrogen introduction holes 1b and 2b so that the room pressure can be changed. Can be equalized.

A heater 8 is provided above the baking chamber 2 to heat the wafer 9 and sinter the spin-on-glass layer 10.

On the surface of the wafer 9, spin-on glass, for example, OCD manufactured by Tokyo Ohka Co., Ltd. is applied at 4,000 rpm by a coater, and 850
A spin-on-glass layer 10 of ± 50Å is formed.

The inside pressure of the decompression chamber 1 is set to normal pressure, the door A3 is opened, and the wafer 9 on which the spin-on-glass layer 10 is formed is transferred to a wafer.
It is loaded by 12, placed on the stage A6, and the door A3 is closed.

In this state, the vacuum pump 11 is used to increase the room pressure to a high vacuum of 10 ^-2 Torr or more and hold it for at least 1 minute or more to release the organic components contained in the spin-on-glass layer 10 into the room. Let it exhaust.

After that, the vacuum exhaust hole 2a is evacuated to make the internal pressure of the firing chamber 2 the same as the internal pressure of the decompression chamber 1.

Next, the gate valve 5 is opened and the wafer 9 is moved from the stage A6 by the wafer transfer means 12 to be placed on the stage B7, and the gate valve 5 is closed.

In this state, spin on glass layer 1 at 450 ° C with heater 8
0 firing is performed. The film thickness of the spin-on-glass layer 10 after firing is 650 ± 50Å.

After applying the spin-on-glass to the wafer 9 and carrying it into the decompression chamber 1 in this way, the organic components contained in the spin-on-glass layer 10 on the surface of the wafer 9 are removed in the decompression chamber 1 and the wafer 9 is continuously exposed to the atmosphere. Baking chamber 2 without touching
Since the organic component does not remain in the spin-on-glass layer 10 because it is moved to and baked, it is possible to prevent the trouble caused by this organic component.

〔The invention's effect〕

As described above, according to the present invention, the removal of the organic component in the spin-on-glass layer and the firing of the spin-on-glass layer are performed by exposing the wafer to the atmosphere by using a device having a decompression chamber and a firing chamber having an extremely simple structure. Since it can be continuously processed without being performed, it is possible to form a high-quality spin-on-glass layer, and there is an advantage that a semiconductor device with excellent quality can be manufactured, and there is a significant economic and reliability improving effect. It can be expected and is extremely useful industrially.

[Brief description of drawings]

FIG. 1 is a side sectional view showing an embodiment according to the present invention, and FIG. 2 is a side sectional view showing a conventional spin-on-glass firing apparatus. In the figure, 1 is a decompression chamber, 1a is a vacuum exhaust hole, 1b is a nitrogen introducing hole, 2 is a baking chamber, 2a is a vacuum exhaust hole, 2b is a nitrogen introducing hole, 3 is a door A, 4 is a door B, and 5 is a gate. A valve, 6 is a stage A, 7 is a stage B, 8 is a heater, 9 is a wafer, 10 is a spin-on-glass layer, 11 is a vacuum pump, and 12 is a wafer transfer means.

Claims (2)

[Claims] 1. A step of applying spin-on-glass on a wafer, a step of volatilizing a solvent in the spin-on-glass in a reduced pressure atmosphere, and thereafter a step of heating and baking the spin-on-glass without exposing it to the atmosphere. A spin-on-glass firing method comprising: 2. A wafer having a spin-on-glass layer (10).
A stage A (6) for mounting (9), a decompression chamber (1) for volatilizing the solvent in the spin-on-glass layer (10), and a stage B (7 for mounting the wafer (9). ), And a gate valve for partitioning the decompression chamber (1) and the firing chamber (2)
(5) and, the both chambers can be transferred from the decompression chamber (1) to the firing chamber (2) without exposing the wafer (9) after the solvent volatilization to the atmosphere without exposing the wafer (9) to the gate valve (5). A spin-on-glass firing apparatus, characterized in that they are coupled via a.