JPS63281434A - Method and apparatus for baking spin-on-glass - Google Patents

Abstract

PURPOSE:To form an excellent spin-on-glass layer by bonding both a decompression chamber and a baking chamber through a gate valve by a method wherein a wafer after solvent volatilizing treatment can be transferred to the baking chamber from the decompression chamber without being exposed to atmospheric air. CONSTITUTION:A spin-on-glass layer 10 is formed onto the surface of a wafer 9. The indoor pressure of a decompression chamber 1 is brought to normal pressure, a door A3 is opened, and the wafer 9 on which the spin-on-glass layer 10 is shaped is carried in by a wafer transfer means 12. The wafer 9 is placed onto a stage A6, and the door A3 is closed. Indoor pressure is held at high vacuum by using a vacuum pump 11 from an evacuation hole 1a under the state. Organic components contained in the spin-on-glass layer 10 is discharged and exhausted into the chamber. The indoor pressure of a baking chamber 2 is brought to the same pressure as the indoor pressure of the decompression chamber 1 through evacuation from an evacuating hole 2a. The wafer 9 is moved from a stage A6 through a gate valve 5, and placed onto a stage B7. The spin-on-glass layer 10 is baked by a heater 8 under the state.

Description

[Detailed Description of the Invention] [Summary] A reduced pressure chamber equipped with a stage A on which a wafer having a spin-on glass layer is placed, and a stage B on which the wafer is placed.
Spin-on glass firing that makes it possible to remove organic components contained inside the spin-on glass layer using a spin-on glass firing apparatus equipped with a firing chamber equipped with a vacuum chamber and a gate valve that partitions the vacuum chamber and firing chamber. Method.

[Industrial application field]

The present invention relates to a method and apparatus for manufacturing a semiconductor device, and particularly to a method and apparatus for sintering a spin-on glass layer.

In the manufacturing process of semiconductor devices, when sintering a spin-on glass layer used for flattening the substrate surface, if it is heated rapidly at the beginning of the sintering process, only the surface layer will solidify and organic components will be inside. A problem occurs in which the organic components remain and are vaporized and separated in the subsequent heating process.

Under the above circumstances, there is a need for a spin-on glass firing method and apparatus in which no organic components remain inside the spin-on glass layer.

[Conventional technology]

The conventional spin-on glass firing method uses a horizontal or vertical electric furnace, as shown in FIG. In this method, a wafer 9 having a spin-on glass layer 10 is placed in a furnace core tube 21, and heated and fired with a heater 28.

If the furnace temperature is 450°C, if you insert wafer 9 at the normal wafer loading speed, the furnace temperature will rise to 400°C.
℃ and heated at a heating rate of 5 to 20℃/min to 45℃.
It becomes 0℃.

When heated at such a temperature increase rate, organic components resulting from the solvent of the spin-on glass remain in the spin-on glass layer 10.

[Problem that the invention seeks to solve]

The problem with the conventional spin-on glass firing method described above is that the temperature rise rate during heating is fast, so the surface is heated up before the organic components caused by the solvent contained inside the spin-on glass are released. As it solidifies, the organic components remain in the spin-on glass layer.

Infrared absorption spectrum analysis after heat treatment confirmed that organic solvent remained in this spin-on glass layer.

In order to solve the above-mentioned problems, the present invention aims to provide a spin-on glass firing method and apparatus that can simply and easily fire spin-on glass.

[Means for solving problems]

The above problem is solved by a baking chamber including a stage A on which a wafer having a spin-on glass layer is placed, a reduced pressure chamber for volatilizing the solvent in this spin-on glass, and a stage B on which the wafer is placed; According to the present invention, there is provided a gate valve that partitions a decompression chamber and a baking chamber, and the two chambers are connected via the gate valve so that the wafer after solvent evaporation treatment can be transferred from the decompression chamber to the baking chamber without exposing it to the atmosphere. This problem is solved by a firing method using a spin-on glass firing device.

[Effect]

That is, in the present invention, a wafer having a spin-on glass layer is carried into a vacuum chamber and placed on a stage,
When the air in the reduced pressure chamber is exhausted to create a reduced pressure atmosphere in the chamber, the organic components contained in the spin-on glass layer are released from the spin-on glass layer into the room and discharged.

After that, the indoor pressure of the decompression chamber and the firing chamber are set to the same pressure to create a high vacuum, and the wafer is carried into the firing chamber through the gate valve, placed on stage B, and heated by a heater. Since the organic components in the layer have been removed, it is possible to sinter the spin-on glass layer without containing any organic components.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

As shown in FIG. 1, the decompression chamber 1 and the firing chamber 2 are separated by a gate valve 5, and each chamber contains
6 and a stage B7 are provided on which the wafer 9 can be placed, and the wafer 9 can be moved between them by the wafer transfer means 12.

The decompression chamber 1 and the firing chamber 2 are provided with vacuum exhaust holes 1a and 2a and nitrogen introduction holes 1b and 2b so as to be able to change the indoor pressure. can be made equal.

A heater 8 is provided in the upper part of the firing chamber 2, and the wafer 9 is heated to sinter the spin-on glass layer 10.

On the surface of the wafer 9, spin-on glass such as OCD manufactured by Tokyo Ohka Co., Ltd. is coated with a coater at 4,000 rpm to form a spin-on glass layer 10 of 850±50 rpm.

The indoor pressure of the decompression chamber 1 is set to normal pressure, the door A3 is opened, the wafer 9 on which the spin-on glass layer 10 has been formed is carried in by the wafer transfer means 12, placed on the stage A6, and the door A3 is opened.
Close.

In this state, the indoor pressure is raised to a high vacuum of 10-2 Torr or more using the vacuum pump 11 through the vacuum exhaust hole 1a, and maintained for at least one minute to release the organic components contained in the spin-on glass layer 10 into the room. Exhaust the air.

Thereafter, the vacuum is evacuated from the vacuum exhaust hole 2a to make the indoor pressure of the firing chamber 2 the same as the indoor pressure of the decompression chamber 1.

Next, the gate valve 5 is opened, the wafer 9 is moved from the stage A6 by the wafer transfer means 12 and placed on the stage B7, and the gate valve 5 is closed.

In this state, the spin-on glass layer 10 is fired at 450° C. by the heater 8. Spin-on glass layer 10 after firing
The film thickness will be 650±50 people.

After applying spin-on glass to the wafer 9 and transporting it into the vacuum chamber 1, the organic components contained inside the spin-on glass layer 10 on the surface of the wafer 9 are removed in the vacuum chamber 1, and then the wafer 9 is exposed to the atmosphere. Since the spin-on glass layer 10 is moved to the firing chamber 2 and fired without touching the spin-on glass layer 10, no organic component remains in the spin-on glass layer 10, and it is possible to prevent problems caused by this organic component.

〔Effect of the invention〕

As explained above, according to the present invention, the removal of organic components in the spin-on glass layer and the baking of the spin-on glass layer can be carried out by exposing the wafer to the atmosphere using an apparatus equipped with a decompression chamber and a baking chamber with an extremely simple configuration. Since the process can be performed continuously without causing any damage, it is possible to form a high-quality spin-on glass layer, which has the advantage of making it possible to manufacture semiconductor devices of excellent quality, and has the effect of significantly improving economy and reliability. It is promising and extremely useful industrially.

[Brief explanation of drawings]

FIG. 1 is a side sectional view showing an embodiment of the present invention, and FIG. 2 is a side sectional view showing a conventional spin-on glass firing apparatus. In the figure, 1 is a decompression chamber, 1a is a vacuum exhaust hole, 1b is a nitrogen introduction hole, 2 is a baking chamber, 2a is a vacuum exhaust hole, 2b is a nitrogen introduction hole, 3 is a door A, 4 is a door B, and 5 is a gate 1 is a valve; 6 is a stage A; 7 is a stage B1; 8 is a heater; 9 is a wafer; 10 is a spin-on glass layer; 11 is a vacuum pump; and 12 is a wafer transfer means.

Claims (2)

[Claims] (1) A step of applying spin-on glass onto a wafer, a step of volatilizing the solvent in the spin-on glass in a reduced pressure atmosphere, and a step of heating and firing the spin-on glass without exposing it to the atmosphere. A spin-on glass firing method characterized by comprising: (2) Wafer with spin-on glass layer (10) (
9), a vacuum chamber (1) for volatilizing the solvent in the spin-on glass layer (10), and a stage B (9) on which the wafer (9) is placed;
7); a gate valve (5) that partitions the reduced pressure chamber (1) and the baking chamber (2); from the reduced pressure chamber (1) to the firing chamber (2) without exposure to
A spin-on glass firing apparatus characterized in that both chambers are connected via the gate valve (5) so as to be able to be transferred to a spin-on glass firing apparatus.