JPH0645471A - Hybrid integrated circuit device - Google Patents

Abstract

PURPOSE:To reduce the whole area of a hybrid integrated circuit device to enhance the packaging density of the device by loading a base stem and a cap or the two sides of the base stem with two hybrid integrated circuit substrates. CONSTITUTION:A hybrid integrated circuit substrate 4 is soldered to a base stem 2, and a lead 5 soldered to a connecting terminal pattern 14 is soldered to a connecting terminal 8 of an external circuit board 7. Further, the surface of the substrate 4 is loaded with a transistor 10 and a capacitor 11 connected together using a strip line 20, and a resistor 12 is formed between the strip line 20 and the pattern 14. On the other hand, the upper surface of the base stem 2 is loaded with the back of a cap 1 for microwave shutting, another hybrid integrated circuit substrate 3 is soldered on to the cap 1, and further a lead 6 is soldered to the pattern 8 of the board 7, while in similar to the board 4 the surface of the board 3 is loaded with a transistor, capacitor, and resistor. Thus, the packaging density of the device can be improved, a predetermined heat dissipation effect can be achieved, and also the high frequency coupling can be prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to a microwave hybrid integrated circuit device.

[0002]

2. Description of the Related Art The structure of a conventional hybrid integrated circuit device for microwaves is, as shown in FIG. 3, a hybrid integrated circuit substrate (for example, a dielectric substrate such as an alumina substrate) 4 on a base stem 2.
Are soldered, the leads 5 soldered to the connection terminal patterns 14 of the hybrid integrated circuit board 4 are soldered to the connection terminal patterns 8 of the external circuit board 7, and are internally generated on the upper surface of the base stem 2. A cap 1 for shutting off microwaves is attached. Further, on the surface of the hybrid integrated circuit board 4, transistors (Tr) 16, 17 are provided.
A capacitor 18 is connected and mounted by a strip line 20, and a resistor 19 is formed between the strip line 20 and the connection terminal pattern 14.

Further, in the case of the conventional technique shown in FIG. 4, the entire surface area is reduced by soldering the backside metallizations 21 of the pair of hybrid integrated circuit boards 4 having the above-mentioned circuit components mounted on the front surface, thereby reducing the mounting density. It is intended to improve.

[0004]

In the conventional hybrid integrated circuit device for microwaves shown in FIG. 3, it is difficult to further reduce the area because the circuits are formed on the same plane. On the other hand, in order to further reduce the area, as shown in FIG. 4, the one in which the back surfaces of a pair of hybrid integrated circuit substrates are bonded together has a characteristic that the ground cannot be properly grounded in the operation of microwaves, especially at a frequency of about 1 GHz or more. When the semiconductor element such as a transistor that becomes unstable or generates a large amount of heat is used, there is a problem that it cannot be used in terms of heat dissipation.

[0005]

A feature of the present invention is that in a hybrid integrated circuit device having a base stem and a cap, particularly for microwaves, a first hybrid integrated circuit substrate is mounted on the base stem, and the cap is provided. In the hybrid integrated circuit device, the second hybrid integrated circuit board is mounted.

Another feature of the present invention is a hybrid integrated circuit device having a base stem and a cap, particularly for microwaves.
And a hybrid integrated circuit device equipped with a second hybrid integrated circuit board.

[0007]

The present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing a hybrid integrated circuit device for microwaves according to a first embodiment of the present invention. FIG. 1 (a) is an external perspective view, and FIG. 1 (b) is FIG. 1 (a). A cross-sectional view taken along the line XX ′ and viewed in the direction of arrow A. FIG. 1C is a cross-sectional view taken along the line ab-cd of FIG.
It is the top view which looked at.

The first (base stem side) hybrid integrated circuit board 4 is soldered on the base stem 2, and the leads 5 soldered to the connection terminal patterns 14 of the hybrid integrated circuit board 4 are external circuits. Soldered to the connection terminal pattern 8 of the substrate 7, and on the surface of the hybrid integrated circuit substrate 4, the transistor (Tr) 10 and the capacitor 11 are connected and mounted by the strip line 20, and the strip line 20 and the connection terminal pattern 14 are mounted. A resistor 12 is formed between them. On the other hand, the back surface of the cap 1 attached to the upper surface of the base stem 2 for blocking microwaves generated inside (the second (cap side) hybrid integrated circuit board 3 is soldered to the lower surface). Similarly to the first hybrid integrated circuit board 4, the leads 6 soldered to the connection terminal patterns of the hybrid integrated circuit board 3 are soldered to the connection terminal patterns 8 of the external circuit board 7, and the second hybrid integrated circuit board On the surface of the circuit board 3, transistors and capacitors are connected and mounted by strip lines, and resistors are formed between the strip lines and the connection terminal patterns.

In the design and manufacture of this hybrid integrated circuit device for microwaves, a circuit having a semiconductor element with low power and low heat generation (for example, a front stage part in the case of a transmission amplifier, a first stage part in the case of a reception amplifier) is 2 is formed on the hybrid integrated circuit board 3 and soldered to the cap 1, and a circuit having a semiconductor element with large power and large heat generation is formed on the first hybrid integrated circuit board 4 and soldered to the base stem 2. First
The lead 5 from the hybrid integrated circuit board 4 and the lead 6 from the second hybrid integrated circuit board 3 are taken out on the opposite side so that they do not closely overlap each other so that high frequency coupling between lead terminals does not occur. ing.

Next, a microwave hybrid integrated circuit device according to a second embodiment of the present invention will be described with reference to FIG.
2 (a) is an external perspective view, and FIG. 2 (b) is shown in FIG.
It is sectional drawing which saw (a) by the XX 'part and looked at the direction of the arrow A.

A base metallization portion of the back surface metallized portion of the first hybrid integrated circuit board 4 on which transistors and capacitors are connected and mounted by strip lines on the front surface and a resistor is formed between the strip lines and the connection terminal pattern. The second hybrid integrated circuit board 15 which is soldered to the upper surface of 2 and is similarly mounted with the transistor and the capacitor connected by the strip line on the surface, and the resistor is formed between the strip line and the connection terminal pattern. The back surface metallized portion is soldered to the lower surface of the base stem 2, and the cap 1 for blocking the microwave generated inside is attached to the upper surface of the base stem 2. And in this embodiment, both hybrid integrated circuit boards 4, 15 are
22 commonly soldered to the connection terminal pattern of
Is soldered to the connection terminal pattern 8 of the external circuit board 7.

[0013]

As described above, according to the present invention, the first and second hybrid integrated circuit boards are mounted on the base stem and the cap, or on the front and back surfaces of the base stem, respectively. The size can be reduced, the packaging density can be improved, and a predetermined heat radiation effect can be obtained.

Furthermore, in the first embodiment shown in FIG. 1, since the leads from each hybrid integrated circuit board are taken out in the opposite direction, the high frequency coupling can be further prevented, while the one shown in FIG. In the second embodiment, since both hybrid integrated circuit boards are mounted on both front and back surfaces of the base stem, grounding can be ensured more reliably and more stable high frequency characteristics can be obtained.

According to the present invention, the module for the amplifier can be downsized in response to the request for downsizing of the parts to be used in accordance with the downsizing of the set of the mobile phone.

[Brief description of drawings]

FIG. 1 is a diagram showing a first embodiment of the present invention.

FIG. 2 is a diagram showing a second embodiment of the present invention.

FIG. 3 is a diagram showing a conventional technique.

FIG. 4 is a diagram showing another conventional technique.

[Explanation of symbols]

 1 Cap 2 Base Stem 3, 4, 15 Hybrid Integrated Circuit Board 5, 6, 22 Lead 7 External Circuit Board 8 External Circuit Board Connection Terminal Pattern 10, 16, 17 Transistor 11, 18 Capacitor 12, 19 Resistor 14 Hybrid Integrated Circuit Board connection terminal pattern 20 Stripline 21 Backside metallization part

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H05K 1/18 G 9154-4E

Claims (2)

[Claims] 1. A hybrid integrated circuit device having a base stem and a cap, wherein a first hybrid integrated circuit board is mounted on the base stem, and a second hybrid integrated circuit board is mounted on the cap. Hybrid integrated circuit device. 2. A hybrid integrated circuit device having a base stem and a cap, wherein first and second hybrid integrated circuit boards are mounted on an upper surface and a lower surface of the base stem, respectively.