GB2307596A - Radio communications module - Google Patents

Radio communications module Download PDF

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Publication number
GB2307596A
GB2307596A GB9624155A GB9624155A GB2307596A GB 2307596 A GB2307596 A GB 2307596A GB 9624155 A GB9624155 A GB 9624155A GB 9624155 A GB9624155 A GB 9624155A GB 2307596 A GB2307596 A GB 2307596A
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United Kingdom
Prior art keywords
radio communications
communications module
chips
substrate
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9624155A
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GB9624155D0 (en
Inventor
Hiroaki Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of GB9624155D0 publication Critical patent/GB9624155D0/en
Publication of GB2307596A publication Critical patent/GB2307596A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Waveguide Connection Structure (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

2307596 1 RADIO COMMWICATIONS MODULE The present invention relates to a
radio communications module of a very small size and, more particularly, to a radio communications module for use in a portable communications terminal.
The mounting arrangement of a conventional radio communications module is shown in Fig. 6. A bare chip 42 of high-frequency components, such as ICs, is bonded to a ceramic multi layer substrate 41 and wire-bonded to pads 43 formed on the ceramic multilayer substrate 41.
However, in the conventional radio communications module, when wire bonding is performed, a space where a wire-connected pad 43 is provided is required on the ceramic multilayer substrate 41, and therefore, the mounting density cannot be increased. Also, since the heat resistance of the ceramic multilayer substrate 41 is great, an increase in the mounting density causes the apparatus temperature to increase. Further, since the dielectric constant Er of the ceramic multilayer substrate 41 is high, for example, Er = 8, wiring 44 becomes too fine in order to achieve matching, causing the wiring loss in the wiring 44 to increase. Therefore, both the consumption of power and noise become large.
Accordingly, it is an object of the present invention to provide a radio communications module in which the mounting density of chips of highfrequency components is increased to achieve a small size.
To achieve the above-described object, according to one aspect of the present invention, there is provided a radio communications 2 module in which chips of high-frequency components are flip-chip mounted on a metal-based thin-film multilayer substrate having a low dielectric constant.
According to another aspect of the present invention, a radio communications module is mounted on a tape carrier package.
According to a further aspect of the present invention, there is provided a radio communications module wherein the chips are mounted in recesses formed in the thin-film multi layer substrate.
As described above, when chips of high-frequency components having bumps formed thereon are flip-chip mounted on a metal-based thin-film multilayer substrate, the mounting density of chips is increased, and wiring loss, consumption of power, and noise are reduced. Thus, the high- frequency characteristics and the heat dissipation characteristic are improved.
Further, by using a tape carrier package (TCP) as a mounting arrangement, inductance can be reduced to less than that in which wire bonding is used, and the high-frequency characteristics can be improved.
Further, when chips are mounted in recesses provided in a dielectric layer of a metal-based thin-film multilayer substrate and a ground electrode is formed on the top surface of the dielectric layer of the metal-based thin-film multilayer substrate, heat dissipation characteristic is improved and interference signals from external sources and radiation from internal circuits can be prevented.
3 The above and further objects, aspects and novel features of the invention will become more apparent from the following detailed description when read in connection with the accompanying drawings.
Embodiments of this invention will now be described by way of example only, with reference to the accompanying drawings of which:
Fig. 1 is a schematic perspective view of the construction of first embodiment of a radio communications module of the present invention; Fig. 2 is a schematic side view of the radio communications module of Fig. 1; Fig. 3A is a perspective view of a tape carrier package (TCP); Fig. 3B is a perspective view of a radio communications module in accordance with a second embodiment of the present invention; Fig. 4 is a perspective view showing the radio communications module connected to the TCP shown in Fig. 1; Fig. 5 is a schematic diagram of the construction of a third embodiment of a radio communications module of the present invention; and Fig. 6 is a schematic perspective view of the construction of a conventional radio communications module.
Fig. 1 is a perspective view of a radio communications module 1 of the present invention. Fig. 2 is a schematic side view of the radio communications module shown in Fig. 1.
A thin-film multilayer substrate 2 has a dielectric layer 2b having a dielectric constant Er made of a polyimide resin, an 1 4 epoxy resin, or the like, and a metallic base 2a. Wiring 3 is formed within and on the surface of the dielectric layer 2b. Since the dielectric layer 2b of the thin-film multi layer substrate 2 has a low dielectric constant er of 4 or less, it is possible to reduce the transmission loss by increasing the width of the wiring 3 formed within or on the surface of the dielectric layer 2b to be greater than that of the prior art and it is thereby possible to achieve matching. Therefore, wiring loss, consumption of power, distortion, and noise can be reduced.
Chips 4 that comprise active and passive high-frequency components of a high-frequency circuit are connected by bumps 4a on the chips 4 (i.e., flip-chip mounted) to the wiring 3 formed on the surface of the dielectric layer 2b of the thin-film multilayer substrate 2. This high- frequency circuit consists of, for example, a gallium arsenide power amplification module (GaAs PA/Mod), a high-frequency SAW filter, a dielectric filter, a voltage controlled oscillator, a gallium arsenide low-noise amplifier mixer (GaAs LNA.MIX), a SAW discriminator, a silicon demodulator (Si Demod), and an intermediate frequency SAW filter.
A viahole 5 extends from the wiring 3 on the surface of the thin-film multilayer substrate 2 to the metallic base 2a, which the via holes serves to allow generated heat from the chips 4 to escape to the metallic base 2a through the bumps 4a and the viahole 5, and also serves for ground connection.
A second embodiment of the present invention will now be described with reference to Figs. 3A and 3B, and Fig. 4. Fig. 3A shows a tape carrier package (TCP) 20, and Fig. 3B shows the radio communications module 1 shown in Fig. 1. This TCP 20 has finger terminals 21 at positions corresponding to wiring terminals 3a of the radio communications module 1. Bumps 3b are formed on the wiring terminals 3a of the radio communications module 1. As shown in Fig. 4, the TCP 20 is mounted on the radio communications module 1, and the ends of the finger terminals 21 are brought into contact with corresponding bumps 3b and are connected thereto by thermal compression bonding. In this way, a plurality of radio communications modules 1 are connected to the TCP 20. When this radio communications module 1 is mounted on a set substrate, the TCP 20 is cut at the broken lines (Fig. 4) and the finger terminals 21 are connected.
In this embodiment, since the radio communications module 1 is connected by the finger terminals 21 of the TCP 20 having a thickness considerably greater than that of a bonding wire, inductance is small, and satisfactory high-frequency characteristics are exhibited.
Next, a third embodiment of the present invention will be described with reference to Fig. 5. In Fig. 5, reference numeral 30 denotes a radio communications module of this embodiment. A dielectric layer 32 made of a resin or the like is formed on a metallic base 31. A thin-film multilayer wiring 32a is formed within the dielectric layer 32, and a ground electrode 32b is formed on the surface of the dielectric layer 32. This ground electrode 32b, as indicated by the broken line, is connected to the metallic base 31 through a viahole, a side short-circuit electrode or the like. A 6 recess 33 is formed by cutting away a part of the dielectric layer 32. The bottom surface of the recess 33 comprises the dielectric layer 32 and the thin-film multilayer wiring 32a is exposed on a part of the dielectric layer 32 on the bottom surface of the recess 33. Then, the chip 4 is connected to the exposed thin-film multilayer wiring 32a via the bumps 4a, whereby the chip 4 is contained in the recess 33.
Since in this embodiment the recess 33 is provided in a part of the dielectric layer 32 and the thickness of a second part of the dielectric layer 32 corresponding to the bottom surface of the recess 33 is made thinner than the thickness of a first part, the heat resistance of the dielectric layer 32 is decreased, making it possible to allow the generated heat of the chips 4 to be more easily dissipated to the metallic base 31. Further, since the ground electrode 32b is provided on the top surface of the dielectric layer 32, it is possible to prevent interference signals from external sources and radiation from internal circuits.
when chips comprising high-frequency components having bumps formed thereon are flip-chip mounted on a metal-based thin-film multilayer substrate, mounting density is increased and compactness can be achieved. can be reduced.
When a TCP is used as a mounting arrangement, it is possible to reduce inductance to less than that when wire bonding is used and to improve high-frequency characteristics.
Also, wiring loss, consumption of power, and noise 7 In addition, in the third embodiment, a recess is provided in a dielectric layer of a metal-based thin-film multilayer substrate and a chip can be placed in this recess with a ground electrode formed on the top surface of the dielectric layer. This results in improved heat dissipation characteristics and prevention of interference signals from an external source and radiation from an internal circuit. many different embodiments of the present invention may be constructed without departing from the spirit and scope of the present invention. It should be understood that the present invention is not limited to the specific embodiments described in this specification. To the contrary, the present invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention as hereafter claimed. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications, equivalent structures and functions.
8

Claims (1)

  1. CLAIMS: 1. A radio communications module chips of high-frequency
    components are flip-chip mounted comprising: a substrate having a low dielectric constant and conductors thereon; and a plurality of highfrequency component chips having conductive bumps thereon, said conductive bumps being conductively connected to said conductors on said substrate, said chips being thereby mounted on said substrate. 2. A radio communications module as in claim 1, wherein said low dielectric constant is 4 or less. 3. A radio communications module as in claim 1, wherein said substrate is a metal-based thin-film multilayer substrate. 4. A radio communications module as in claim 3, wherein said low dielectric constant is 4 or less. 5. A radio communications module as in claim 3, further comprising a viahole extending through said substrate from said conductors to said metal base, for conducting heat from said chips to said metal base and for serving as a ground connection from said conductors to said metal base. 6. A radio communications module according to claim 1, wherein said chips have said conductive bumps on bottom surfaces thereof and are mounted in recesses formed in said substrate, said conductors being on corresponding bottom surfaces of said recesses.
    1 L A 9 7. A radio communications module comprising a ground electrode on a surrounding said recesses in which 8. A radio communications module according to claim 1, further top surface of said substrate and said chips are mounted. according to claim 1, wherein said chips have said conductive bumps on bottom suirfaces thereof. 9. A radio communications module according to claim 1, said radio communications module being mounted on a tape carrier package. 10. A radio communications module according to claim 9, wherein said substrate of said module is mounted on said tape carrier package and said conductive bumps on said chips are connected to finger electrodes on said tape carrier package. 11. A radio communications module substantially as hereinbefore described with reference to Figures 1 to 5 of the accompanying drawings.
GB9624155A 1995-11-21 1996-11-20 Radio communications module Withdrawn GB2307596A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7303027A JPH09148373A (en) 1995-11-21 1995-11-21 Radio communication module

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GB9624155D0 GB9624155D0 (en) 1997-01-08
GB2307596A true GB2307596A (en) 1997-05-28

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
GB2341482A (en) * 1998-07-30 2000-03-15 Bookham Technology Ltd Mounting optoelectronic devices on lead frames
EP1114445A1 (en) * 1998-07-30 2001-07-11 Motorola, Inc. Electronic device with a thermal control capability
US6628178B2 (en) * 2000-08-30 2003-09-30 Tdk Corporation Radio frequency module parts including surface acoustic wave elements and manufacturing method thereof
US7088983B2 (en) 1999-02-03 2006-08-08 Rohm Co., Ltd. Semiconductor device for radio communication device, and radio communication device using said semiconductor device

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Publication number Priority date Publication date Assignee Title
WO2001003188A1 (en) * 1999-07-01 2001-01-11 Intermec Ip Corp. Integrated circuit attachment process and apparatus
EP1460759A4 (en) 2001-12-28 2009-09-02 Panasonic Corp Surface acoustic wave device, electronic component using the device, and composite module
JP7424849B2 (en) * 2020-01-31 2024-01-30 太陽誘電株式会社 Filters, multiplexers and communication modules

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US5297333A (en) * 1991-09-24 1994-03-29 Nec Corporation Packaging method for flip-chip type semiconductor device
EP0638926A1 (en) * 1993-08-13 1995-02-15 Fujitsu Limited Process of fabricating semiconductor unit employing bumps to bond two components
EP0638931A2 (en) * 1993-08-12 1995-02-15 Fujitsu Limited Multi-chip module
WO1996017505A1 (en) * 1994-12-01 1996-06-06 Motorola Inc. Method, flip-chip module, and communicator for providing three-dimensional package

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US5194933A (en) * 1990-10-05 1993-03-16 Fuji Electric Co., Ltd. Semiconductor device using insulation coated metal substrate
DE4222402A1 (en) * 1992-07-08 1994-01-13 Daimler Benz Ag Arrangement for the multiple wiring of multi-chip modules
US5402003A (en) * 1993-11-12 1995-03-28 Trw Inc. Low dielectric constant interconnect for multichip modules

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Publication number Priority date Publication date Assignee Title
US5297333A (en) * 1991-09-24 1994-03-29 Nec Corporation Packaging method for flip-chip type semiconductor device
EP0638931A2 (en) * 1993-08-12 1995-02-15 Fujitsu Limited Multi-chip module
EP0638926A1 (en) * 1993-08-13 1995-02-15 Fujitsu Limited Process of fabricating semiconductor unit employing bumps to bond two components
WO1996017505A1 (en) * 1994-12-01 1996-06-06 Motorola Inc. Method, flip-chip module, and communicator for providing three-dimensional package

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2341482A (en) * 1998-07-30 2000-03-15 Bookham Technology Ltd Mounting optoelectronic devices on lead frames
US6162653A (en) * 1998-07-30 2000-12-19 Bookham Technology, Plc Lead frame attachment for optoelectronic device
EP1114445A1 (en) * 1998-07-30 2001-07-11 Motorola, Inc. Electronic device with a thermal control capability
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JPH09148373A (en) 1997-06-06
GB9624155D0 (en) 1997-01-08
DE19648308A1 (en) 1997-05-22

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