JPH0645272Y2 - 通過形swr測定装置 - Google Patents
通過形swr測定装置Info
- Publication number
- JPH0645272Y2 JPH0645272Y2 JP1989092007U JP9200789U JPH0645272Y2 JP H0645272 Y2 JPH0645272 Y2 JP H0645272Y2 JP 1989092007 U JP1989092007 U JP 1989092007U JP 9200789 U JP9200789 U JP 9200789U JP H0645272 Y2 JPH0645272 Y2 JP H0645272Y2
- Authority
- JP
- Japan
- Prior art keywords
- swr
- output
- terminal
- wave power
- potentiometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Monitoring And Testing Of Transmission In General (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989092007U JPH0645272Y2 (ja) | 1989-08-04 | 1989-08-04 | 通過形swr測定装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989092007U JPH0645272Y2 (ja) | 1989-08-04 | 1989-08-04 | 通過形swr測定装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0330870U JPH0330870U (cg-RX-API-DMAC7.html) | 1991-03-26 |
| JPH0645272Y2 true JPH0645272Y2 (ja) | 1994-11-16 |
Family
ID=31641456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989092007U Expired - Lifetime JPH0645272Y2 (ja) | 1989-08-04 | 1989-08-04 | 通過形swr測定装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645272Y2 (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921686B2 (en) | 1995-02-21 | 2005-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
-
1989
- 1989-08-04 JP JP1989092007U patent/JPH0645272Y2/ja not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921686B2 (en) | 1995-02-21 | 2005-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US7045403B2 (en) | 1995-02-21 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
| US7615423B2 (en) | 1995-02-21 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing insulated gate thin film semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0330870U (cg-RX-API-DMAC7.html) | 1991-03-26 |