JPH0643657A - Method for applying photosensitive resist to deformed substrate - Google Patents
Method for applying photosensitive resist to deformed substrateInfo
- Publication number
- JPH0643657A JPH0643657A JP5874192A JP5874192A JPH0643657A JP H0643657 A JPH0643657 A JP H0643657A JP 5874192 A JP5874192 A JP 5874192A JP 5874192 A JP5874192 A JP 5874192A JP H0643657 A JPH0643657 A JP H0643657A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- photosensitive resist
- prescribed
- deformed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電子機器に使用される
薄膜抵抗器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film resistor used in electronic equipment.
【0002】[0002]
【従来の技術】着膜された平滑な基板表面に感光性レジ
ストを均一に塗布する一般な手法は回転塗布方式であっ
た。2. Description of the Related Art A general method for uniformly coating a photosensitive resist on a film-formed smooth substrate surface is a spin coating method.
【0003】[0003]
【発明が解決しようとする課題】着膜された平滑な基板
に感光性レジストを均一に塗布する手法は回転塗布方式
が一般的であるが、穴あき基板などの変形絶縁基板は回
転塗布方式を行うと感光性レジスト膜がムラになり、均
一な膜厚が得られないため所望のフォトエッチングを行
うことが不可能であった。A spin coating method is generally used as a method for uniformly coating a photosensitive resist on a film-formed smooth substrate, but a spin coating method is used for a modified insulating substrate such as a perforated substrate. If this is done, the photosensitive resist film becomes uneven and a uniform film thickness cannot be obtained, making it impossible to carry out the desired photoetching.
【0004】[0004]
【課題を解決するための手段】本発明は抵抗膜等を着膜
した変形絶縁基板に感光性レジストを塗布するため、図
1に示すスプレー方式を用いるものである。The present invention uses a spray method shown in FIG. 1 to apply a photosensitive resist to a deformed insulating substrate having a resistance film or the like formed thereon.
【0005】スプレー方式を用いることにより均一な感
光性レジスト膜厚が得られ所望のフォトエッチングを行
うことが可能になった。By using the spray method, it is possible to obtain a uniform photosensitive resist film thickness and perform desired photoetching.
【0006】[0006]
【実施例1】図3に示す様なT形形状の薄膜アッテネー
タの量産を可能にするもので絶縁基板として図2に示す
50mm×40mm×0.4mm,穴の大きさが4mm×2.5
mmの穴あき変形セラミック基板を用いた。該基板に蒸着
法によりニッケルクロム系の抵抗膜及び一次電極膜を着
膜する。[Embodiment 1] A T-shaped thin film attenuator as shown in FIG. 3 can be mass-produced. The insulating substrate is 50 mm × 40 mm × 0.4 mm shown in FIG. 2, and the hole size is 4 mm × 2.5.
A perforated deformed ceramic substrate of mm was used. A nickel-chrome-based resistance film and a primary electrode film are deposited on the substrate by vapor deposition.
【0007】次に該基板に感光性レジストをスプレー方
式により約2μの膜厚で塗布し、フォトエッチング法で
パターン形成した後、350℃1時間の熱処理を施し、
レーザトリミングで抵抗値調整を行った。Next, a photosensitive resist is applied to the substrate by a spray method to a film thickness of about 2 μm, a pattern is formed by a photo-etching method, and then heat treatment is performed at 350 ° C. for 1 hour.
The resistance value was adjusted by laser trimming.
【0008】次に該基板をスナップに沿ってモジュール
単位に分割して図3に示す製品が完成した。Next, the substrate was divided into modules along the snap to complete the product shown in FIG.
【0009】本製品の仕様は、R1=427Ω,R2=R
3=2.5Ω,±25ppm/℃である。The specifications of this product are: R 1 = 427Ω, R 2 = R
3 = 2.5Ω, ± 25 ppm / ° C.
【0010】[0010]
【実施例2】トランジスタ等の半導体の熱暴走を防ぐた
めの保護回路及び動作点安定のための温度補償に用いる
温度センサの熱伝導を最適にし、かつ取付けを簡略化す
るために放熱板自体に直接薄膜温度センサを成膜するも
のであり、絶縁基板として図4に示す30mm×15mm×
15mmのブロック型アルミニュウム製放射板を用いた。[Second Embodiment] A heat dissipation plate itself is used in order to optimize the heat conduction of a protection circuit for preventing thermal runaway of a semiconductor such as a transistor and a temperature sensor used for temperature compensation for stabilizing an operating point and to simplify mounting. A thin film temperature sensor is directly formed into a film, and the insulating substrate is 30 mm × 15 mm × shown in Fig. 4.
A 15 mm block type aluminum radiation plate was used.
【0011】該基板にスパッタ法により絶縁層をもうけ
た後蒸着法により感温膜としてニッケルを着膜する。After forming an insulating layer on the substrate by a sputtering method, nickel is deposited as a temperature sensitive film by a vapor deposition method.
【0012】次に該基板に感光性レジストをスプレー方
式により約2μの膜厚で塗布しフォトエッチング法でパ
ターン形成した後、320℃1時間の熱処理を施して図
5に示す製品が完成した。Next, a photosensitive resist was applied on the substrate by a spray method to a film thickness of about 2 μm, a pattern was formed by a photo-etching method, and then heat treatment was performed at 320 ° C. for 1 hour to complete the product shown in FIG.
【0013】本製品の仕様は、約10kΩ,約+500
0ppm/℃である。The specification of this product is about 10 kΩ, about +500
It is 0 ppm / ° C.
【0014】[0014]
【発明の効果】本発明により変形したセラミック等の絶
縁基板表面に、均一に感光性レジストを塗布することが
可能になった。According to the present invention, it becomes possible to uniformly apply a photosensitive resist to the surface of an insulating substrate such as a deformed ceramic.
【0015】[0015]
【図1】本発明の方式を示す側図面である。FIG. 1 is a side view showing a method of the present invention.
【図2】本発明の方式で薄膜アッテネータを製造するの
に使用した基板を示す上図面である。FIG. 2 is a top view showing a substrate used to manufacture a thin film attenuator according to the method of the present invention.
【図3】本発明の方式で製造した薄膜アッテネータを示
す上図面である。FIG. 3 is a top view showing a thin film attenuator manufactured by the method of the present invention.
【図4】本発明の方式で保護回路用薄膜抵抗温度センサ
を製造するのに使用した基板を示す立体図である。FIG. 4 is a perspective view showing a substrate used to manufacture a thin film resistance temperature sensor for a protection circuit according to the method of the present invention.
【図5】本発明の方式で製造した保護回路用薄膜抵抗温
度センサを示す正図面である。FIG. 5 is a front view showing a thin film resistance temperature sensor for a protection circuit manufactured by the method of the present invention.
【図6】本発明の方式で製造した保護回路用薄膜抵抗温
度センサ及びトランジスタ基板を示す全体図である。FIG. 6 is an overall view showing a thin film resistance temperature sensor for a protection circuit and a transistor substrate manufactured by the method of the present invention.
1 スプレーのノズル 2 感光性レジスト 3 基板 4 ニッケルクロム系抵抗膜 5 電極膜 6 ニッケル膜 7 トランジスタ 1 Spray Nozzle 2 Photosensitive Resist 3 Substrate 4 Nickel Chromium Resistive Film 5 Electrode Film 6 Nickel Film 7 Transistor
Claims (2)
に着膜した皮膜をエッチングするために該基板にフォト
エッチング用感光性レジストを均一に塗布することを可
能にした方法。1. A method which enables a photosensitive resist for photo-etching to be uniformly applied to an insulating substrate such as a perforated ceramic substrate in order to etch the film deposited on the substrate.
に着膜した皮膜をエッチングするために該基板にフォト
エッチング用感光性レジストを均一に塗布することを可
能にした方法。2. A method which enables a photosensitive resist for photo-etching to be uniformly applied to the surface of an insulating substrate such as an uneven ceramic to etch a film deposited on the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5874192A JPH0643657A (en) | 1992-02-13 | 1992-02-13 | Method for applying photosensitive resist to deformed substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5874192A JPH0643657A (en) | 1992-02-13 | 1992-02-13 | Method for applying photosensitive resist to deformed substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0643657A true JPH0643657A (en) | 1994-02-18 |
Family
ID=13092954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5874192A Pending JPH0643657A (en) | 1992-02-13 | 1992-02-13 | Method for applying photosensitive resist to deformed substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0643657A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010119997A (en) * | 2008-11-21 | 2010-06-03 | Miyako Roller Industry Co | Method of coating with resist |
-
1992
- 1992-02-13 JP JP5874192A patent/JPH0643657A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010119997A (en) * | 2008-11-21 | 2010-06-03 | Miyako Roller Industry Co | Method of coating with resist |
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