JPH06350191A - Surface light emitting element - Google Patents
Surface light emitting elementInfo
- Publication number
- JPH06350191A JPH06350191A JP13634393A JP13634393A JPH06350191A JP H06350191 A JPH06350191 A JP H06350191A JP 13634393 A JP13634393 A JP 13634393A JP 13634393 A JP13634393 A JP 13634393A JP H06350191 A JPH06350191 A JP H06350191A
- Authority
- JP
- Japan
- Prior art keywords
- carriers
- resonator
- reflecting mirror
- laser
- spontaneous emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1078—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with means to control the spontaneous emission, e.g. reducing or reinjection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光伝送や光情報処理用
の面発光素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface emitting device for optical transmission and optical information processing.
【０００２】[0002]
【従来の技術】光伝送や光情報処理用の光源である半導
体レーザの研究が進められている。その中で、面型半導
体レーザは、（１）モノリシックな共振器形成が可能、
（２）素子分離前のウェハー単位の検査が可能、（３）
動的単一波長動作、（４）大放射面積、狭出射円形ビー
ム、（５）高密度２次元レーザアレー、（６）積層によ
る３次元アレーデバイスの集積化が可能、などの特徴が
ある。面型半導体レーザについては、伊賀らによって先
駆的な研究が行われ、彼らの一連の研究結果は１９８８
年発行の伊賀他著のジャーナル・オブ・カンタム・エレ
クトロニクス（Ｊｏｕｒｎａｌ ｏｆ Ｑｕａｎｔｕｍ
Ｅｌｅｃｔｒｏｎｉｃｓ）第２４巻１８４５ページ記
載の論文に歴史的な経緯を含めてまとめられている。2. Description of the Related Art Research on a semiconductor laser, which is a light source for optical transmission and optical information processing, is under way. Among them, the surface-type semiconductor laser is capable of (1) forming a monolithic resonator,
(2) Wafer-by-wafer inspection before element separation is possible, (3)
It features dynamic single-wavelength operation, (4) large emission area, narrow emission circular beam, (5) high-density two-dimensional laser array, and (6) integration of three-dimensional array device by stacking. A pioneering research was conducted by Iga et al. On the surface-type semiconductor laser, and the results of their series of research are 1988.
Published by Iga et al., Journal of Quantum Electronics (Journal of Quantum)
(Electronics) Vol. 24, page 1845, including historical background.
【０００３】更に面型光機能素子は、前述の面型半導体
レーザの長所を活かした光情報処理を行う素子であり、
大容量の情報処理を目指した２次元並列光情報処理を可
能にすると期待されている。このような面型光機能素子
の１つとして、垂直共振器型面入出力光電融合素子があ
り、この文献として１９９１年発行の沼居他著のアプラ
イドフィジックス・レターズ（Ａｐｐｌｉｅｄ Ｐｈｙ
ｓｉｃｓ Ｌｅｔｔｅｒｓ）第５８巻１２５０ページ記
載の論文をあげることが出来る。Further, the surface-type optical functional element is an element for performing optical information processing by making use of the advantages of the surface-type semiconductor laser described above.
It is expected to enable two-dimensional parallel optical information processing aiming at large-capacity information processing. As one of such surface-type optical functional elements, there is a vertical resonator type surface-input / output optoelectronic device, which is referred to by Numai et al., Applied Physics Letters (Applied Phy).
Sics Letters) Volume 58, page 1250 can be cited.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
面発光素子には次のような課題が存在する。面発光素子
は２次元に集積化することで、並列光伝送や並列光情報
処理に適していると考えられる。しかしながら、従来の
面発光素子では、消費電力が必ずしも小さくないため、
２次元集積化が困難であった。However, the conventional surface emitting device has the following problems. It is considered that the surface emitting element is suitable for parallel optical transmission and parallel optical information processing by being integrated in two dimensions. However, in the conventional surface emitting device, the power consumption is not always small,
Two-dimensional integration was difficult.
【０００５】そこで、本発明の目的は、２次元集積化に
適した消費電力の小さい面発光素子を実現することであ
る。Therefore, an object of the present invention is to realize a surface-emitting device with low power consumption suitable for two-dimensional integration.
【０００６】[0006]
【課題を解決するための手段】本発明の面発光素子は、
少なくとも活性層を含む側面が多層膜から構成される反
射鏡で被覆され、かつ前記反射鏡が金属反射鏡で被覆さ
れていることを特徴とする。The surface emitting device of the present invention comprises:
At least the side surface including the active layer is covered with a reflecting mirror composed of a multilayer film, and the reflecting mirror is covered with a metal reflecting mirror.
【０００７】あるいは、本発明の面発光素子は、素子上
部の反射鏡と前記側面の反射鏡とが導電層によって接続
されていることを特徴とする。Alternatively, the surface emitting element of the present invention is characterized in that the reflecting mirror on the upper side of the element and the reflecting mirror on the side surface are connected by a conductive layer.
【０００８】[0008]
【作用】請求項１の発明では、レーザ共振器の側面が多
層反射膜と金属反射膜で被覆されていることが特徴であ
る。このような構造にすると、自然放出光は、レーザ共
振器の外に放出されることがなくなり、レーザ共振器中
にとどまることになる。その結果、自然放出光は、再び
活性層で吸収されキャリアを再生する。すなわち、通常
のレーザ共振器では、キャリアの一部が共振器外へ失わ
れる自然放出光に変換されて消費されるが、自然放出光
に変換されたキャリアが再びキャリアに変換される（フ
ォトン・リサイクリング）ことにより、共振器内のキャ
リア密度が実効的に高くなり、レーザ発振の閾値が低く
なる。発振閾電流が小さくなることにより、駆動電流が
小さくて済むので低消費電力化が図れる。The invention is characterized in that the side surface of the laser resonator is covered with a multilayer reflection film and a metal reflection film. With such a structure, the spontaneous emission light is not emitted to the outside of the laser resonator and stays in the laser resonator. As a result, the spontaneous emission light is again absorbed by the active layer to regenerate the carrier. That is, in a normal laser resonator, some of the carriers are converted into spontaneous emission light that is lost to the outside of the resonator and consumed, but the carriers converted into spontaneous emission light are converted back into carriers (photon By recycling, the carrier density in the resonator is effectively increased, and the threshold value of laser oscillation is decreased. By reducing the oscillation threshold current, it is possible to reduce the driving current and thus reduce power consumption.
【０００９】請求項２の発明では、素子上部の反射鏡と
前記側面の反射鏡とが導電層によって接続されているこ
とを特徴としている。一般に半導体多層反射膜の電気抵
抗は大きいが、例えばＺｎ拡散等により接続部の多層膜
を無秩序化して、無秩序化された部分から電流注入する
ことにより電気抵抗を低減することが可能となる。電気
抵抗が低減されれば、発熱によるキャリアの活性層から
のオーバーフローが小さくなるので、高効率な動作が実
現できる。すなわち、所要の光出力を得ようとすれば、
効率が高いため消費電力が小さくて済む。The invention of claim 2 is characterized in that the reflecting mirror on the upper side of the element and the reflecting mirror on the side surface are connected by a conductive layer. Generally, the semiconductor multi-layer reflective film has a large electric resistance, but it is possible to reduce the electric resistance by making the multi-layer film of the connection portion disordered by, for example, Zn diffusion and injecting a current from the disordered portion. When the electric resistance is reduced, the overflow of carriers from the active layer due to heat generation is reduced, so that highly efficient operation can be realized. That is, to obtain the required light output,
High efficiency means low power consumption.
【００１０】[0010]
【実施例】図面を参照して、本実施例を詳細に説明す
る。図１は、本発明の第１の実施例の面発光素子の構造
を示す図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS This embodiment will be described in detail with reference to the drawings. FIG. 1 is a diagram showing a structure of a surface emitting device according to a first embodiment of the present invention.
【００１１】以下、製作手順にしたがって本実施例の構
造について説明する。ｎ形ＧａＡｓ基板１０上に分子線
ビームエピタキシー（以下ＭＢＥと略す）によりｎ形Ｇ
ａＡｓ／ＡｌＡｓ多層反射膜２０、ｎ形ＧａＡｓ層１
１、Ｉｎ0 . 2 Ｇａ0 . 8 Ａｓ活性層１２、ｐ形ＧａＡ
ｓクラッド層１３を順次成長する。ｐ形ＧａＡｓクラッ
ド層１３、Ｉｎ0 . 2 Ｇａ0 . 8 Ａｓ活性層１２、ｎ形
ＧａＡｓ層１１、ｎ形ＧａＡｓ／ＡｌＡｓ多層反射膜２
０の一部を素子上部からみたときに正方形となるように
エッチングした後、ｐ形ＧａＡｓ／ＡｌＡｓ多層反射膜
２１を全面に成長する。絶縁膜２２として窒化シリコン
膜を選択的に形成した後、ｐ形ＧａＡｓ／ＡｌＡｓ多層
反射膜２１を覆うようにアノード電極Ａｕ３１を形成す
る。このｐ形ＧａＡｓ／ＡｌＡｓ多層反射膜２１上のア
ノード電極３１は金属反射膜として機能する。またウェ
ハーの一部をエッチングした後ｎ形ＧａＡｓ／ＡｌＡｓ
多層反射膜２０上にカソード電極３０を形成する。 図
２は、本発明の第２の実施例の面発光素子の構造を示す
図である。第１の実施例との違いは素子上部の反射鏡と
前記側面の反射鏡とが導電層２４によって接続されてい
ることである。この導電層は、全ての層を成長後Ｚｎ拡
散により接続部の多層膜を無秩序化したものである。The structure of this embodiment will be described below in accordance with the manufacturing procedure. An n-type G is formed on the n-type GaAs substrate 10 by molecular beam epitaxy (hereinafter abbreviated as MBE).
aAs / AlAs multilayer reflective film 20, n-type GaAs layer 1
1, In 0. 2 Ga 0 . 8 As active layer 12, p-type GaA
The s clad layer 13 is sequentially grown. p-type GaAs cladding layer 13, In 0. 2 Ga 0 . 8 As active layer 12, n-type GaAs layer 11, n-type GaAs / AlAs multilayer reflective film 2
After etching a part of 0 so as to be a square when viewed from the top of the element, a p-type GaAs / AlAs multilayer reflective film 21 is grown on the entire surface. After selectively forming a silicon nitride film as the insulating film 22, an anode electrode Au31 is formed so as to cover the p-type GaAs / AlAs multilayer reflective film 21. The anode electrode 31 on the p-type GaAs / AlAs multilayer reflective film 21 functions as a metal reflective film. Also, after etching a part of the wafer, n-type GaAs / AlAs
The cathode electrode 30 is formed on the multilayer reflective film 20. FIG. 2 is a diagram showing the structure of the surface emitting element of the second embodiment of the present invention. The difference from the first embodiment is that the reflector on the upper side of the element and the reflector on the side surface are connected by a conductive layer 24. This conductive layer is obtained by disordering the multilayer film of the connection portion by Zn diffusion after growing all layers.
【００１２】以上のような構造にすることによって、電
力／光変換効率が２０％以上の素子を実現することが可
能となる。With the above structure, it is possible to realize a device having a power / light conversion efficiency of 20% or more.
【００１３】なお、半導体材料については上述のＧａＡ
ｓ系に限定する必要はなく、例えばＩｎＰ系の材料であ
ってもよい。Regarding the semiconductor material, the above-mentioned GaA is used.
The material is not limited to the s-based material, and may be an InP-based material, for example.
【００１４】[0014]
【発明の効果】面発光素子として、２次元集積化に適し
た消費電力の小さい素子を実現することができる。As a surface emitting element, an element with low power consumption suitable for two-dimensional integration can be realized.
【図１】本発明の第１の実施例の面発光素子の構造を示
す図である。FIG. 1 is a diagram showing a structure of a surface emitting element according to a first embodiment of the present invention.
【図２】本発明の第２の実施例の面発光素子の構造を示
す図である。FIG. 2 is a diagram showing a structure of a surface emitting element according to a second embodiment of the present invention.
１０ 半導体基板 １１ ｎ−半導体層 １２ 活性層 １３ ｐ−半導体層 ２０ ｎ−半導体多層膜 ２１ ｐ−半導体多層膜 ２２ 絶縁膜 ２４ 導電層 ３０ 電極 ３１ 電極 10 semiconductor substrate 11 n-semiconductor layer 12 active layer 13 p-semiconductor layer 20 n-semiconductor multilayer film 21 p-semiconductor multilayer film 22 insulating film 24 conductive layer 30 electrode 31 electrode
Claims (2)
面が多層膜から構成される反射鏡で被覆され、かつ前記
反射鏡が金属反射鏡で被覆されていることを特徴とする
面発光素子。1. A surface emitting device, wherein at least a side surface of the surface emitting device including an active layer is covered with a reflecting mirror formed of a multilayer film, and the reflecting mirror is covered with a metal reflecting mirror.
が導電層によって接続されていることを特徴とする請求
項１記載の面発光素子。2. The surface emitting device according to claim 1, wherein the reflector on the upper side of the element and the reflector on the side surface are connected by a conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13634393A JPH06350191A (en) | 1993-06-08 | 1993-06-08 | Surface light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13634393A JPH06350191A (en) | 1993-06-08 | 1993-06-08 | Surface light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06350191A true JPH06350191A (en) | 1994-12-22 |
Family
ID=15172987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13634393A Pending JPH06350191A (en) | 1993-06-08 | 1993-06-08 | Surface light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06350191A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998043329A1 (en) * | 1997-03-21 | 1998-10-01 | Novalux, Inc. | High power laser devices |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386580A (en) * | 1986-09-30 | 1988-04-16 | Shimadzu Corp | Light emitting diode |
| JPH01308091A (en) * | 1988-06-07 | 1989-12-12 | Canon Inc | Surface emission type semiconductor laser device |
-
1993
- 1993-06-08 JP JP13634393A patent/JPH06350191A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386580A (en) * | 1986-09-30 | 1988-04-16 | Shimadzu Corp | Light emitting diode |
| JPH01308091A (en) * | 1988-06-07 | 1989-12-12 | Canon Inc | Surface emission type semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998043329A1 (en) * | 1997-03-21 | 1998-10-01 | Novalux, Inc. | High power laser devices |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0709939B1 (en) | Light emitting device and its fabrication method | |
| JP3143662B2 (en) | Opto-electronic semiconductor devices | |
| US5545903A (en) | Radiation-emitting semiconductor diode and method of manufacturing same | |
| JPH06196681A (en) | Light-receiving-and-emitting integrated element | |
| JP2003513476A (en) | Long wavelength pseudomorphic InGaNPAsSb type I and type II active layers for GaAs material systems | |
| JP2857256B2 (en) | Vertical semiconductor laser | |
| JPH09107153A (en) | Short-wave vcsel having active region with no aluminum | |
| JPH04225588A (en) | Semiconductor laser structure | |
| JP3206097B2 (en) | Surface emitting semiconductor laser | |
| JPH0738196A (en) | Surface light emitting element | |
| US6846685B2 (en) | Vertical-cavity surface-emitting semiconductor laser | |
| JPH05283796A (en) | Surface emission type semiconductor laser | |
| JPH1154793A (en) | Element for electromagnetic radiation in predetermined wavelength and its manufacture | |
| JP3206080B2 (en) | Semiconductor laser | |
| JPH0629612A (en) | Manufacture of surface emission-type semiconductor laser and laser obtained by above manufacture | |
| JP3829153B2 (en) | Optical semiconductor device | |
| JP4134366B2 (en) | Surface emitting laser | |
| JPH08181384A (en) | Surface emitting laser and its forming method | |
| JP2757633B2 (en) | Surface emitting semiconductor laser | |
| JP3712686B2 (en) | Planar optical semiconductor device | |
| JPH06350191A (en) | Surface light emitting element | |
| CN114830467A (en) | Light emitting device and method of manufacturing the same | |
| JPH1022586A (en) | Semiconductor light emitting device | |
| JPH0856055A (en) | Semiconductor laser system | |
| JPH06326409A (en) | Surface emission element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19960611 |