JP3206097B2 - Surface emitting semiconductor laser - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-emitting type semiconductor laser which oscillates a laser beam in a direction perpendicular to a substrate.

[0002]

2. Description of the Related Art As a surface emitting semiconductor laser having a resonator in a direction perpendicular to a substrate (hereinafter referred to as a "surface emitting semiconductor laser"), for example, the proceedings of the 50th Annual Meeting of the Japan Society of Applied Physics Third volume p. 909 29a-ZG-
7 (issued September 27, 1989) is known.

In such a surface emitting semiconductor laser, a buried layer is formed of a pn junction layer composed of a p-type AlGaAs layer and an n-type AlGaAs layer. This is the p-type GaAs
This is to prevent a current from flowing to portions other than the s active layer.

On the other hand, the applicant of the present application has already proposed a surface emitting semiconductor laser in which such a buried layer is formed only by a single epitaxial layer of a II-VI compound semiconductor (Japanese Patent Application No. 2-242000). ). Such a surface emitting semiconductor laser has the advantages that the resistance of the buried layer can be increased, so that sufficient current confinement can be obtained, and that alignment of the interface with the columnar region is not required.

As shown in FIG. 11, this surface emitting semiconductor laser first comprises (403) an n-type GaAs buffer layer on a (402) n-type GaAs substrate, (404) a distributed reflection type multilayer mirror,
(405) n-type Al _0.4 Ga _0.6 As cladding layer, (406) p-type GaAs active layer, (407) p-type Al _0.4 Ga _0.6 As cladding layer, and (408) p-type Al _0.1 Ga _0.9 As contact layer. After that, (407) p-type Al _0.4 Ga _0.6 A
The s cladding layer and the (408) p-type Al _0.1 Ga _0.9 As contact layer are vertically etched leaving a cylindrical area,
Further, (409) ZnS _0.06 Se is formed around the columnar region.
_0.94 is formed and embedded, and then (408) p-type Al
_On the upper surface of the _0.1 Ga _0.9 As contact layer, a (411) dielectric multilayer mirror is vapor-deposited in a region slightly smaller than the cylindrical diameter, and finally a (410) p-type ohmic electrode and a (401) n-type ohmic electrode are formed. It is constituted by.

[0006]

In such a surface emitting semiconductor laser, in order to control the light output, an automatic power control (hereinafter, referred to as APC) for detecting the output light intensity of the semiconductor laser and controlling the driving current. It is desirable to configure a circuit. In the conventional method, the chip having the semiconductor laser is different from the chip having the photodiode. The two chips are mounted in one package, and the return light of the output light of the semiconductor laser and a part of the output light are converted to the photodiode. And the APC circuit was configured.

A surface emitting semiconductor laser emits laser light only in one direction perpendicular to the substrate, as shown in FIG. Therefore, a method in which laser light is emitted in two directions as in a conventional edge-emitting type semiconductor laser, one of which is used as a required laser light, and the other is used for monitoring is used. Can not. Therefore, in the surface emitting semiconductor laser, a part of the laser emission light is extracted by a photodiode mounted separately from the laser chip, and the output is detected.

However, according to the study of the present inventors,
When the above-described method is used, the following problems occur.

The semiconductor chip constituting the surface emitting semiconductor laser and the semiconductor chip constituting the photodiode for monitoring the amount of light must be separately mounted in one package. Therefore, the yield in the mounting process, individual accuracy adjustment, characteristic check, and the like deteriorate the overall yield and characteristics, and the manufacturing cost increases.

Since the surface emitting semiconductor laser chip and the photodiode chip are mounted separately to constitute one element, it is not possible to reduce the size of one element. In addition, the feature that a free two-dimensional array, which is a feature of the surface emitting semiconductor laser, is possible is greatly restricted because a photodiode must be separately mounted.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. It is an object of the present invention to provide a simple manufacturing method, high reliability, good characteristics, and high yield. An object of the present invention is to provide a semiconductor laser having a structure for detecting output light, which does not impair the characteristics.

[0012]

SUMMARY OF THE INVENTION A semiconductor laser according to the present invention includes a light emitting portion for emitting light in a direction perpendicular to a semiconductor substrate, and has a resonator structure formed in a direction perpendicular to the semiconductor substrate. A surface emitting semiconductor laser in which at least one semiconductor layer forming the resonator is formed in a columnar shape, a photodiode for detecting output light of the surface emitting semiconductor laser on the same substrate as the semiconductor substrate An electrode is provided on a part of the surface of the photodiode, and a dielectric layer is formed on a surface of a portion other than the electrode on the surface of the photodiode, wherein the resonator structure portion is provided. And the photodiode are separated by a separation groove.

In the semiconductor laser, preferably,
The periphery of the columnar semiconductor layer and the periphery of the photodiode are buried with a II-VI group compound semiconductor epitaxial layer.

In the above-mentioned semiconductor laser, a dielectric layer is formed on the surface of the portion other than the electrode provided on the surface of the photodiode, and more preferably, the dielectric layer is formed by: Reflectance at oscillation wavelength of 10
% Or less.

[0015]

According to the above structure, the surface emitting semiconductor laser and the photodiode are manufactured on the same substrate, so that the reflected light of the output light of the surface emitting semiconductor laser, for example, the glass of the emission window of the surface emitting semiconductor laser package. The light reflected inside the photodiode can be introduced into the photodiode from the portion of the photodiode surface where the dielectric layer is provided, and the amount of light can be detected. By separating the detection sections with the separation grooves, light leaking from the light emitting section in the horizontal direction of the substrate does not reach the detection section, and the output laser light of the surface emitting semiconductor laser can be directly measured and controlled. It becomes possible.

Further, the photodiode does not require a special structure, and the semiconductor laser structure can be used as a photodiode structure by driving a device having the same structure as the resonator of the surface emitting semiconductor laser in reverse bias. Therefore, a special process or the like is not required for manufacturing a photodiode, and a surface-emitting laser can be manufactured with high density and high yield on the same substrate.

In the semiconductor laser, preferably,
The periphery of the columnar semiconductor layer and the periphery of the photodiode are buried with a II-VI group compound semiconductor epitaxial layer, so that leakage of current to the high-resistance buried layer does not occur, With a simple structure, it is possible to electrically separate a surface emitting semiconductor laser (vertical resonator structure portion) from a photodiode portion.

In the semiconductor laser, a dielectric layer is preferably formed on a surface of the photodiode other than the portion where the electrode is provided, so that the dielectric layer more preferably has a reflectance at an oscillation wavelength. By setting the layer to 10% or less, the detection sensitivity can be improved.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

(Reference Example) FIG. 1 is a perspective view showing a cross section of a light emitting portion and a detection portion of a semiconductor laser (100) as a reference example, and FIGS.
(F) is a sectional view showing a manufacturing step of the semiconductor laser in the example.

Hereinafter, the semiconductor laser (10
FIG. 2A to FIG.
It is explained according to.

First, on a (102) n-type GaAs substrate,
(103) An n-type GaAs buffer layer is formed, and further, an n-type Al _0.7 Ga _0.3 As layer and an n-type Al _0.1 Ga _0.9 As layer, and 30 pairs having a reflectance of 98% or more with respect to light near a wavelength of 870 nm (104) A distributed reflection type multilayer mirror is formed. Subsequently, (105) n-type Al _0.4 Ga _0.6 As clad layer, (106) p-type GaAs active layer, (107) p-type Al _0.4 G
a _0.6 As clad layer, (108) p-type Al _0.1 Ga _0.9 As
The contact layers are sequentially grown epitaxially by MOCVD (FIG. 2A). At this time, in this embodiment,
The growth temperature was set to 700 ° C., the growth pressure was set to 150 Torr, organic metals of TMGa (trimethylgallium) and TMAl (trimethylaluminum) were used as Group III materials, AsH ₃ was used as Group V materials, and H ₂ was used as an n-type dopant. Se and DEZn as a p-type dopant
(Diethyl zinc) is used.

Thereafter, the surface is formed by thermal CVD.
(112) An SiO ₂ layer is formed, and further, by a reactive ion beam etching method (hereinafter referred to as “RIBE method”), (113) a columnar light emitting portion and a columnar detecting portion covered with a resist are left. (107) Etching is performed halfway through the p-type Al _0.4 Ga _0.6 As cladding layer (FIG. 2B). At this time, in this embodiment, a mixed gas of chlorine and argon is used as the etching gas, and the gas pressure is set to 1 × 10
^-3 Torr, and the extraction voltage is 400 V. Here, the reason why the etching is performed only in the middle of the (107) p-type Al _0.4 Ga _0.6 As cladding layer is that the structure for confining the injected carriers and light in the horizontal direction of the active layer is a rib waveguide type refractive index waveguide. This is because of the structure.

Next, the (107) p-type Al _0.4 Ga _0.6 A
A buried layer is formed on the s-cladding layer. For this purpose, in this embodiment, first, (113) the resist is removed,
Next, the (109) Z
The nS _0.06 Se _0.94 layer is buried and grown (FIG. 2)
(C)).

Next, the (112) SiO ₂ layer is removed, and subsequently, four pairs of (111) SiO ₂ are formed on the surface of the (108) contact layer.
/ Α-Si dielectric multilayer mirror is formed by electron beam evaporation, and reactive ion etching (hereinafter referred to as “RIE”).
Method), and is removed while leaving a region slightly smaller than the diameter of the light emitting portion (FIG. 2D).
The reflectivity of this dielectric multilayer mirror at a wavelength of 870 nm is 94%.

Further, (120) a light emitting section is separated from a (121) detecting section. (122) In order to form a separation groove, (113) a resist is again used as a mask and (107) a p-type Etching is performed halfway through the Al _0.4 Ga _0.6 As cladding layer (FIG. 2E).

Thereafter, a (110) p-type ohmic electrode is deposited on the surface of the light emitting portion other than the (111) dielectric multilayer mirror and a part of the surface forming the detecting portion. At that time, the electrode in contact with the light emitting unit and the electrode in contact with the detection unit are separated so that current can be supplied independently. The reason why the electrodes are formed only on a part of the surface of the detection unit and the surface of the detection unit is left exposed is that the reflected light of the laser light emitted from the light emitting unit is taken into the detection unit from the surface side. That's why. Further, a (101) n-type ohmic electrode is deposited on the (102) n-type Al _0.1 Ga _0.9 As substrate side (FIG. 2 (f)). Finally, alloying at 400 ° C. is performed in an N ₂ atmosphere.

By the above steps, as shown in FIG.
It is possible to obtain a (100) surface emitting semiconductor laser having a rib waveguide structure, (120) a light emitting portion, and (121) a detector having the same structure as the light emitting portion.

FIG. 3 is a schematic view showing an example when the surface emitting semiconductor laser according to the present invention is mounted on a package. (120) Part of the (123) laser light emitted from the light emitting section is reflected by (124) glass and (121) is introduced into the detecting section.

FIG. 4 is a diagram showing the relationship between the driving current and the oscillation light output for the light emitting portion of the surface emitting semiconductor laser of this embodiment and the relationship between the current flowing to the detecting portion at that time. At room temperature, continuous oscillation was achieved, and the threshold current was as low as 1 mA. Further, the current flowing through the detection unit is hardly measured below the threshold current, and there is no influence of the lateral leakage light from the light emitting unit. When the current exceeds the threshold current, laser oscillation starts, so that the laser light reflected inside the glass of the exit window of the package enters the detection unit, and the current flowing to the detection unit increases accordingly. In the present reference example, when the optical output is 1 mW, the amount of current flowing to the detection unit is 40
Although it was a detectable size of μA, the detection sensitivity could be improved by applying a reverse bias to the pn junction constituting the detection section.

Embodiment 1 FIG. 5 shows a semiconductor laser (20) according to a first embodiment of the present invention.
FIG. 6A is a perspective view showing a cross section of the light emitting section and the detecting section, and FIGS. 6A to 6F are cross sectional views showing manufacturing steps of the semiconductor laser (200) in this embodiment.

In the semiconductor laser (200) of this embodiment, both the light-emitting portion and the detection portion cover from the (208) p-type Al _0.1 Ga _0.9 As contact layer to the (205) n-type Al _0.4 Ga _0.6 As clad layer. It differs from the first embodiment in that it is formed in a columnar shape.

Hereinafter, the structure and manufacturing process of this embodiment will be described with reference to FIGS.

First, on a (202) n-type GaAs substrate,
(203) An n-type GaAs buffer layer is formed, and an n-type AlAs layer and an n-type Al _0.1 Ga _0.9 As layer are further formed.
30 that has a reflectance of 98% or more for light near 70 nm
A pair of (204) distributed reflection type multilayer mirrors is formed. Subsequently, (205) n-type Al _0.4 Ga _0.6 As clad layer, (206)
A p-type GaAs active layer, a (207) p-type Al _0.4 Ga _0.6 As cladding layer, and a (208) p-type Al _0.1 Ga _0.9 As contact layer are sequentially epitaxially grown by MOCVD (FIG. 6A). At this time, in this embodiment, the growth temperature is set to 700 ° C., the growth pressure is set to 150 Torr,
Organic materials such as TMGa (trimethylgallium) and TMAl (trimethylaluminum) are
AsH ₃ as a group material and H as an n-type dopant
₂ Se is used, and DEZn (diethyl zinc) is used as a p-type dopant.

Then, the surface is formed by thermal CVD.
(212) An SiO ₂ layer is formed, and further, by a RIBE method, (213) An n-type Al _0.4 Ga _0.6 As clad layer is left (205) n-type Al _0.4 Ga _0.6 As clad layer leaving a light-emitting portion and a detection portion covered with a resist. Then, etching is performed (FIG. 6B). On this occasion,
In this embodiment, a mixed gas of chlorine and argon is used as the etching gas, and the gas pressure is set to 1 × 10 ⁻³ To.
rr, and the extraction voltage is 400V.

Next, a buried layer is formed on the etched region. For this reason, in this embodiment, first,
(213) The resist is removed, and then the MBE method or MOC
A (209) ZnS _0.06 Se _0.94 layer is buried and grown by VD method or the like (FIG. 6C).

Further, the (212) SiO ₂ layer is removed, and subsequently, four pairs of (211) Si
An O ₂ / α-Si dielectric multilayer mirror is formed by electron beam evaporation, and is removed by dry etching using RIE except for a region slightly smaller than the diameter of the light emitting portion. The reflectivity of this dielectric multilayer mirror at a wavelength of 870 nm is 9
4%. Furthermore, (221) (21)
5) An SiO ₂ dielectric layer is formed by electron beam evaporation, and the film thickness is controlled so that the reflectance of the surface of the detecting portion is 10% or less at a wavelength of 870 nm (FIG. 6D).

Further, (220) a light emitting portion is separated from a (221) detection portion. (222) In order to form a separation groove, (213) a resist is again used as a mask, and (207) a p-type Etching is performed halfway through the Al _0.4 Ga _0.6 As cladding layer (FIG. 6E).

Thereafter, a (210) p-type ohmic electrode is deposited on the surface other than the (211) dielectric multilayer mirror and the (215) SiO ₂ dielectric layer. At that time, the electrode in contact with the light emitting unit and the electrode in contact with the detection unit are separated so that current can be supplied independently. (202) On the n-type GaAs substrate side, (20
1) Deposit an n-type ohmic electrode (FIG. 6 (f)). Finally, alloying at 400 ° C. is performed in an N ₂ atmosphere.

By the above steps, as shown in FIG.
A (200) surface emitting semiconductor laser having an embedded structure (220) having a light emitting portion and a (221) detecting portion having the same structure as the light emitting portion can be obtained.

The (200) of the present embodiment thus created
Also in the surface emitting semiconductor laser, a threshold current was as extremely low as 1 mA as in Example 1 described above, and a surface emitting semiconductor laser capable of controlling the laser light output by the current flowing through the detection unit was obtained.

Further, in this embodiment, by providing a dielectric layer on the surface of the detecting section so that the reflectance at the oscillation wavelength is 10% or less, the reflected light can be detected efficiently, and the detecting section can be efficiently detected. The sensitivity of was improved.

In the first embodiment in addition to the reference example, the buried layer is made of ZnS0.06Se0.94 which is a II-VI group compound semiconductor.
By using the layer, the electrical resistance of the light emitting unit and the detecting unit can be separated by a single layer because of its high resistance.

Embodiment 2 FIG. 7 shows a semiconductor laser (30) according to a second embodiment of the present invention.
FIG. 8 is a perspective view showing a cross section of the light emitting unit and the detecting unit of FIG.
(A) to (f) and FIG. 9A are cross-sectional views showing a manufacturing process of the semiconductor laser (300) in this embodiment.

The semiconductor laser (300) of the present embodiment is obtained by using (307)
The present embodiment differs from the first and second embodiments in that a light emitting portion is formed of a plurality of columnar portions separated from each other by a separation groove in a p-type Al _0.5 Ga _0.5 As clad layer.

Hereinafter, the structure and manufacturing process of this embodiment will be described with reference to FIGS. 8 (a) to 8 (f) and FIG. 9 (a).

First, on a (302) n-type GaAs substrate,
(303) An n-type GaAs buffer layer is formed, and an n-type Al _0.9 Ga _0.1 As layer and an n-type Al _0.2 Ga _0.8 As layer are further formed.
25 pairs of (304) semiconductor multilayer mirrors having a reflectance of 8% or more are formed. Subsequently, (305) n-type Al _0.5 Ga _0.5
As clad layer, (306) p-type Al _0.13 Ga _0.87 As active layer, (307) p-type Al _0.5 Ga _0.5 As clad layer, (308)
P-type Al _0.15 Ga _0.85 As contact layer is sequentially MOCV
Epitaxial growth is performed by method D (FIG. 8A). In this embodiment, the growth condition at this time is set to a growth temperature of 720.
° C, a growth pressure of 150 Torr, and TMGa (trimethylgallium) and TMA
An organic metal of 1 (trimethylaluminum) is used, AsH ₃ is used as a group V raw material, H ₂ Se is used as an n-type dopant, and DEZn (diethyl zinc) is used as a p-type dopant.

Next, the surface is subjected to atmospheric pressure thermal CVD (31).
2) An SiO ₂ layer is formed, a photoresist is applied thereon, and a photolithography process is performed to form a required pattern. At that time, the resist pattern is formed under pattern forming conditions such that the side surface is perpendicular to the substrate surface. After the formation, the temperature heating which causes drooping of the side surface is not performed.

Thereafter, using this pattern as a mask,
Reactive ion etching (RIE) using CF ₄ gas as an etching gas is performed. (312) The SiO ₂ layer is removed. At this time, the (312) S between the light emitting part and the detecting part with a large space
Etching is performed so that the iO ₂ layer is completely removed and the (312) SiO ₂ layer between a plurality of columnar portions forming a light emitting portion with a small interval is left. As described above, a pattern made of the (313) resist and the (312) SiO ₂ layer having a required pattern shape and a side surface perpendicular to the substrate can be formed (FIG. 8B).

Subsequently, this vertical side was provided (313)
Using the resist as a mask, etching is performed using a RIBE method, leaving a light emitting portion and a detection portion in a columnar shape. At this time, due to the difference in the presence of the (312) SiO ₂ layer, the gap between the plurality of columnar portions forming the light emitting portion is (307) halfway through the p-type Al _0.5 Ga _0.5 As cladding layer, and between the light emitting portion and the detecting portion. Between (305) n
Etching is performed to a part of the mold Al _0.5 Ga _0.5 As clad layer (FIG. 8C). At this time, in this embodiment, a mixed gas of chlorine and argon is used as the etching gas, the gas pressure is 5 × 10 ⁻⁴ Torr, and the plasma extraction voltage is 400.
V, ion current density 400 μA /
cm ² , and the sample temperature is kept at 20 ° C.

Here, the light emitting portion is made of (307) p-type Al _0.5 Ga
_{The reason} why etching is performed only halfway through the _0.5 As clad layer is that the injection of carriers and light confined in the horizontal direction of the active layer is made a refractive index waveguide type rib waveguide structure, and a part of the light in the active layer is activated. This is to enable transmission in the layer horizontal direction.

The resist has vertical side surfaces.
(313) Using a resist, and further using an RIBE method of irradiating ions in a beam shape perpendicularly to the etching sample as an etching method, by using a RIBE method, (320) the light emitting portion close to the substrate, In addition to being able to be separated by a simple separation groove, it is possible to manufacture a vertical optical resonator necessary for improving the characteristics of a surface emitting semiconductor laser. Next, the (307) p-type Al _0.5 Ga _0.5
A buried layer is formed on the As clad layer. For this purpose, in this embodiment, first, (313) the resist is removed,
Next, by MBE or MOCVD, (30
9) ZnS _0.06 Se _0.94 layer is buried and grown (Fig. 8).
(D)).

Further, the (312) SiO 2 layer and the polycrystalline ZnSSe formed thereon are removed, and
A pair of (311) SiO2 / .alpha.-Si dielectric multilayer film reflecting mirrors is formed by electron beam evaporation, and is removed by dry etching using RIE except for a region slightly smaller than the diameter of the light emitting portion. The reflectance at a wavelength of 780 nm of the dielectric multilayer mirror is 95% or more. Here, in the (300) semiconductor laser of the present embodiment, since the (311) dielectric multilayer mirror was formed also on the separation groove buried with ZnS _0.06 Se _0.94 , it was perpendicular to the region sandwiched between the light emitting parts. Since a resonator structure is formed, the light leaking to the separation groove side also effectively contributes to laser oscillation, and the leaked light is used.
Light emission is synchronized with the phase of the light emitting unit.

Also, (321) a part of the surface of the detection unit
SiO_Two The dielectric layer is formed by electron beam evaporation,
So that the reflectance of the surface is 10% or less at a wavelength of 870 nm.
Control the film thickness (FIG. 8 (e)). Further, separate the (320) light emitting unit and (321) detecting unit (32)
2) Mask (313) resist again to form separation grooves
(307) p-type Al using the RIBE method _0.5Ga
_0.5Etching is performed up to the middle of the As clad layer (Fig.
8 (f)).

Thereafter, a (310) p-type ohmic electrode is deposited on the surface other than the (311) dielectric multilayer mirror and the (315) SiO ₂ dielectric layer. At that time, the electrode in contact with the light emitting unit and the electrode in contact with the detection unit are separated so that current can be supplied independently. Further, the (302) n-type GaAs substrate side (30
1) An n-type ohmic electrode is deposited (FIG. 9A). Finally, alloying at 400 ° C. is performed in an N ₂ atmosphere.

As described above, the steps shown in FIGS.
A (300) surface emitting semiconductor laser having a (320) light emitting portion and a (321) detecting portion having the structure shown in (a) can be obtained.

(300) of the present embodiment thus created
Also in the surface-emitting semiconductor laser, the laser output light can be detected by the detection unit having the same structure as the light-emitting unit, as in the first embodiment, in addition to the above-described reference example. By applying a reverse bias,
The detection sensitivity could be improved.

In each of the above embodiments, GaAlAs
Although the system surface-emitting type semiconductor laser has been described, the present invention can also be suitably applied to other group III-V type surface-emitting type semiconductor lasers. In particular, the active layer can change the oscillation wavelength by changing the Al composition. .

Further, it goes without saying that the surface emitting semiconductor laser of the present invention can be applied to not only printing apparatuses such as printers and copiers but also facsimile machines, displays and communication equipment.

FIG. 10 is a schematic diagram of an auto power control (APC) circuit manufactured by using the surface emitting semiconductor laser of this embodiment.

[0061]

As described above in detail, according to the present invention, the laser output light is directly detected by forming the photodiode on the same semiconductor substrate as the semiconductor substrate constituting the surface emitting semiconductor laser. Thus, a controllable surface emitting semiconductor laser with an APC circuit can be manufactured.

Further, by making the structure of the photodiode the same as that of the surface emitting semiconductor laser, it is not necessary to prepare a special manufacturing process for incorporating the photodiode, so that the reliability is high. A surface-emitting semiconductor laser with a high yield can be easily manufactured.

Further, by embedding a high-resistance II-VI compound semiconductor epitaxial layer around the columnar semiconductor layer and between the photodiode and the photodiode, it is possible to easily separate the surface emitting semiconductor laser from the photodiode. became.

Further, by forming a dielectric layer for lowering the reflectance on the exposed portion of the photodiode surface, the detection sensitivity could be improved.

In particular, when the semiconductor lasers are two-dimensionally integrated at high density to form an array, the number of photodiodes can be reduced, so that the present invention is very useful.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a cross section of a surface emitting semiconductor laser according to a reference example.

FIGS. 2A to 2F are cross-sectional views illustrating a manufacturing process of a surface-emitting semiconductor laser according to a reference example.

FIG. 3 is a schematic diagram showing an example when a surface emitting semiconductor laser is mounted on a package.

FIG. 4 is a diagram showing a relationship between a drive current of a surface emitting semiconductor laser and an oscillation light output according to a reference example and a relationship between a current flowing to a detection unit at that time.

FIG. 5 is a perspective view illustrating a cross section of the surface emitting semiconductor laser according to the first embodiment.

FIGS. 6A to 6F are cross-sectional views illustrating a manufacturing process of the surface emitting semiconductor laser according to the first embodiment.

FIG. 7 is a perspective view illustrating a surface emitting semiconductor laser according to a second embodiment.

8A to 8F are cross-sectional views illustrating a manufacturing process of the surface emitting semiconductor laser according to the second embodiment.

FIG. 9A is a sectional view illustrating a manufacturing step of the surface emitting semiconductor laser according to the second embodiment, and is a view subsequent to FIG. 8F;

FIG. 10 is a schematic diagram of an auto power control (APC) circuit manufactured using the surface emitting semiconductor laser of the example.

FIG. 11 is a perspective view showing an example of a conventional semiconductor laser.

Claims (9)

(57) [Claims] 1. A semiconductor device comprising: a light emitting portion that emits light in a direction perpendicular to a semiconductor substrate; and a resonator structure formed in a direction perpendicular to the semiconductor substrate. A surface-emitting type semiconductor laser in which one layer is formed in a columnar shape, comprising: a photodiode for detecting output light of the surface-emitting type semiconductor laser on the same substrate as the semiconductor substrate; The part is provided with an electrode,
A dielectric layer is formed on the surface of the portion of the photodiode other than the portion on which the electrode is provided, and that the resonator structure portion and the photodiode are separated by a separation groove. Characteristic semiconductor laser. 2. The semiconductor laser according to claim 1, wherein a periphery of said columnar semiconductor layer and a periphery of said photodiode are buried with a II-VI group compound semiconductor epitaxial layer. 3. The method according to claim 1, wherein the dielectric layer has a reflectance of 1 at an oscillation wavelength.
3. The semiconductor laser according to claim 1, wherein said semiconductor laser is a layer having a thickness of 0% or less. 4. The semiconductor laser according to claim 1, wherein said photodiode is an element driven in reverse bias. 5. The semiconductor laser according to claim 1, further comprising an auto power control circuit, wherein the driving current is controlled by an output light intensity detected by the photodiode. 6. The resonator structure and the photodiode portion have a structure in which at least a first cladding layer, an active layer, a second cladding layer, and a contact layer are sequentially stacked from a semiconductor substrate side. 6. The semiconductor laser according to claim 1, wherein a portion from the contact layer to a part of the second cladding layer has a columnar structure in each of the device structure portion and the photodiode portion. 7. The resonator structure portion and the photodiode portion have a structure in which at least a first clad layer, an active layer, a second clad layer, and a contact layer are sequentially stacked from a semiconductor substrate side. 6. The semiconductor laser according to claim 1, wherein the portion from the contact layer to a portion of the first cladding layer has a columnar structure in each of the device structure portion and the photodiode portion. 8. The semiconductor laser according to claim 7, wherein at least a second cladding layer is further separated by a separation groove in the resonator structure to form a plurality of columnar portions. 9. The semiconductor laser according to claim 1, wherein a plurality of said resonator structure portions and said photodiodes are respectively arranged two-dimensionally.