JPH06349757A - Heat-treating device - Google Patents

Abstract

PURPOSE:To provide a phosphorus deposition device which can form N<+>-layers having a uniform sheet resistance on wafers in the same charge rod. CONSTITUTION:The title device is provided with a first gas nozzle 21 through which a reactive gas containing N2, O2, and POCl3 is supplied to wafers 5 arranged in the interior of a quartz tube 3 and second gas nozzle 22 through which the reactive gas is supplied to wafers 5B arranged from the wafer port to the cental part of the tube 3. Since the reactive gas is supplied into the tube 3 through the nozzles 21 and 22 and a plurality of holes provided in corresponding to the wafers 5A and 5B, N<+>-layers having a uniform sheet resistance are formed on the surfaces of the wafers 5A and 5B.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention heats a large number of objects to be processed in a single row in a reaction furnace and allows a reaction gas to flow into the reaction furnace for surface treatment of the objects. The present invention relates to a heat treatment apparatus, and is particularly suitable for a phosphorus deposition apparatus for forming an N ⁺ layer on the surface of a wafer.

[0002]

2. Description of the Related Art Conventionally, a Linde deposition apparatus is constructed as shown in FIG. 6 or 7, for example. FIG. 6 is a sectional configuration diagram of the vertical lindeposition apparatus, and FIG. 7 is a sectional configuration diagram of the horizontal lindeposition apparatus. In FIG. 6, 1 is a heater, 2 is a gas nozzle, 3 is a quartz tube, 4 is a quartz board, 5 is a wafer, 6 is a push rod, 7 is a heat cap, and 8 is an exhaust port. Further, in FIG. 7, 9 is a heater, 10 is a gas nozzle, 11 is a quartz tube, 12 is a quartz board, 13 is a wafer, and 1 is a wafer.
4 is an exhaust port.

When an N ⁺ layer is formed on the surface of the wafer 5 or 13 by using the phosphorus deposition apparatus as shown in FIG. 6 or 7, the quartz is adjusted by adjusting the heat generation state of the heaters 1 and 9. N ₂ gas, O ₂ gas and POCl ₃ gas are caused to flow into the quartz tubes 3 and 11 from the nozzles 2 and 10 while keeping the tubes 3 and 11 at an appropriate temperature.

By the way, in the vertical phosphorus deposition apparatus shown in FIG. 6, the quartz tube 3 is surrounded by the heater 1, and N ₂ , O ₂ ,
POCl ₃ gas is supplied to form an N ⁺ layer on the surface of the wafer 5. Then, the gas after the reaction is exhausted from the exhaust port 8. The quartz board 4 is taken in and out by moving the push rod 6 up and down by an elevator. Further, in the horizontal Lindeposition apparatus shown in FIG. 7, similarly,
The quartz tube 11 is surrounded by the heater 9, and the gas nozzle 10 allows N ₂ , O ₂ , and P to enter the quartz tube 11.
OCl ₃ gas is supplied to form an N ⁺ layer on the surface of the wafer 13. The gas after the reaction is exhausted from the exhaust port 14.

However, when the Linde deposition apparatus having the above-mentioned structure is used, N is formed on the surfaces of the wafers 5 and 13.
^{When the +} layer is formed, the sheet resistance ρs of this N ⁺ layer is low on the gas supply port side of the gas nozzles 2 and 10, and the exhaust ports 8 and 1
There is a problem that the height increases on the 4th side, and variations occur between wafers in the same charge rod.

[0006]

As described above, the conventional heat treatment apparatus has a problem that the surface treatment characteristics of the object to be treated are not uniform even within the same charge rod. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heat treatment apparatus capable of uniformizing the surface treatment characteristics of an object to be treated within the same charge rod.

[0007]

That is, according to the present invention, in order to achieve the above object, a large number of objects to be treated are accommodated in a reactor in a state of being arranged in at least one row and heated, and this reaction is carried out. In a heat treatment apparatus for treating a surface of an object to be processed by flowing a reaction gas into the furnace, first gas supply means for supplying the reaction gas to one side of the row of the object to be processed,
A second gas supply means for supplying a reaction gas is provided on the other side of the row of the object to be processed, and the surface treatment of the object to be processed is performed.

Further, the heat treatment apparatus of the present invention includes a reaction furnace for accommodating a wafer placed on a board, a heating means for heating the inside of the reaction furnace, N ₂ , O ₂ and POC.
supplying a reactant gas containing l _3, a first reaction gas discharging means for supplying a wafer side, which are arranged behind the reactor, the reaction gas from the placed wafer side near the center of the board A vertical Lindeposition apparatus comprising a second reactive gas ejecting means and forming an N ⁺ layer on the surface of each wafer by the reactive gas ejected from the first and second reactive gas ejecting means. It is characterized by

The first reaction gas discharge means is the N
A reaction gas containing ₂ , O ₂ and POCl ₃ is discharged from a portion of about ½ of the entire length of the board through a plurality of holes facing a wafer mounted on the back side of the reaction furnace. The second reaction gas discharge means supplies the reaction gas containing the N ₂ , O ₂ and POCl ₃ to about 1 of the entire length of the board.
It is characterized in that it is supplied from a plurality of / 2 portions through a plurality of holes facing the wafer placed in front of the reaction furnace.

Further, the heat treatment apparatus of the present invention includes a reaction furnace for accommodating a wafer placed on a board, heating means for heating the inside of the reaction furnace, N ₂ , O ₂ and POC.
The reaction gas containing l _3, a first reaction gas discharging means for supplying the wafer side placed in the vicinity of the loading and unloading opening of the board in the reactor, is placed the reaction gas in the vicinity of the center of the board And a second reactive gas discharge means for supplying from the wafer side, and a horizontal type Linde for forming an N ⁺ layer on the surface of each wafer by the reactive gas discharged from the first and second reactive gas discharge means. It is characterized by configuring a position device.

The first reaction gas discharge means is the N
A reaction gas containing ₂ , O ₂ , and POCl ₃ is supplied from a portion of about ½ of the entire length of the board through a plurality of holes facing the wafer mounted on the loading / unloading side of the board, The second reaction gas discharge means is the N
Reacting gas containing ₂ , O ₂ and POCl ₃ is supplied from a half of the entire length of the board through a plurality of holes facing the wafer arranged on the inner side of the reaction furnace. Characterize.

[0012]

In the heat treatment apparatus according to the first aspect, the reaction gas can be supplied to the wafers on one side and the other side of the row of the object to be processed by the first gas supply means and the second gas supply means, respectively. As compared with the conventional device that supplies the reaction gas from only one side, the surface treatment characteristics of the object to be treated in the same charge rod can be made uniform.

In the heat treatment apparatus according to claim 2, the first
With the reaction gas discharge means and the second reaction gas discharge means, N ₂ , O ₂ and POCl ₃ are respectively supplied to the wafer placed on the back side of the reaction furnace and the wafer placed near the center of the board. Since the containing reaction gas can be supplied, an N ⁺ layer having a uniform sheet resistance can be formed in the same charge rod as compared with a conventional vertical phosphorus deposition apparatus that supplies the reaction gas only from the inner side of the reaction furnace.

According to a third aspect of the present invention, in the apparatus of the second aspect, by supplying the reaction gas from a plurality of holes facing the wafer, the supply amount of the reaction gas can be made constant between the wafers, and N ⁺ The sheet resistance of the layer can be made more uniform.

In the heat treatment apparatus according to claim 4, the first
N ₂ from the wafer side mounted near the wafer loading / unloading port in the reaction furnace and N ₂ from the wafer side mounted near the center of the board by the reaction gas discharging means and the second reaction gas discharging means, respectively. Since the reaction gas containing O ₂ and POCl ₃ can be supplied, the N ⁺ layer having a uniform sheet resistance in the same charge rod as compared to the conventional horizontal phosphorus deposition apparatus that supplies the reaction gas only from the inner side of the reaction furnace. Can be formed.

As described in claim 5, in the apparatus of claim 4, by supplying the reaction gas from a plurality of holes facing the wafer, the supply amount of the reaction gas can be made constant between the wafers, and N ⁺ The sheet resistance of the layer can be made more uniform.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a vertical Lindeposition apparatus for explaining a heat treatment apparatus according to an embodiment of the present invention. 1, the same components as those in FIG. 6 are designated by the same reference numerals. A heater 1 for heating the inside of the quartz tube 3 is provided around the quartz tube 3 serving as a reaction furnace. A heat cap 7 is provided on one end side of the quartz tube 3, and the other end side is closed. The quartz tube 3 accommodates a large number of wafers 5 mounted on the quartz board 4 in a row. A push rod 6 is connected to the quartz board 4, and the wafer 5 placed on the quartz board 4 is taken in and out by moving the push rod 6 up and down by an elevator.

Gas nozzles 21 and 22 (gas dispersion type gas nozzles) having different lengths are provided in the quartz tube 3. One gas nozzle 21 has a length reaching the depth of the quartz tube 3, and the other gas nozzle 22 has a length. , Quartz board 4
Has a length reaching almost the central part of the. 2A and 2B, the gas nozzle 21 has a plurality of holes 23 formed so as to face the wafer 5 in a portion below the central portion, as shown in the side and front views, respectively. The gas nozzle 22 has a plurality of holes 23 facing the wafer 5, as shown in the side and front views of FIGS. 2 (c) and 2 (d), respectively. The gas nozzle 21 is provided with N ₂ , O ₂ , P on the wafer 5A arranged on the inner side of the quartz tube 3.
The reaction gas containing OCl ₃ is supplied, and the gas nozzle 22 is disposed on the side of the heat cap 7 for the wafer 5.
A reaction gas having the same composition is supplied to B. These gas nozzles 21 and 22 introduce reaction gas (N ₂ , O ₂ , POCl ₃ gas) from the gas introduction ports 21I and 22I,
The structure is such that gas is discharged from holes 23 formed facing the gas discharge ports 21O and 22O and the wafers 5A and 5B.
Then, the two gas nozzles 21 and 22 having different lengths are provided.
Thus, the reaction gas is uniformly fed over the entire area of the reaction furnace (quartz tube 3). Then, the gas after the reaction is exhausted from the exhaust port 8 provided on the upper part of the quartz tube 3.

FIG. 3 compares the relationship between the wafer mounting position and the sheet resistance ρs of the formed N ⁺ layer in the conventional vertical deposition apparatus shown in FIG. 6 and the vertical deposition apparatus according to the present invention. Is shown. FIG. 4 also shows a comparison between the mounting position of the wafer and the variation in the sheet resistance ρs in the conventional device and the device of the present invention. As is clear from these figures, by using the vertical type phosphorus deposition apparatus of the present invention, it is possible to form an N ⁺ layer having good sheet resistance uniformity in the same charge rod.

The deposition conditions of FIGS. 3 and 4 are as follows: growth temperature 900 ° C., growth pressure 0.15 Torr, N
₂ gas flow rate 10 liters / min, O ₂ gas flow rate 1
Liter / min, flow rate of POCl ₃ gas 140 mg /
It is min.

FIG. 5 is for explaining a second embodiment of the present invention, in which the present invention is applied to a horizontal Lindeposition apparatus. In the second embodiment, instead of the gas nozzle 10 in the apparatus shown in FIG. 7, two long and short gas dispersion type gas nozzles 21 and 22 are used as in the first embodiment. That is, a heater 9 for heating the inside of the quartz tube 11 is provided around the quartz tube 11 serving as a reaction furnace.
A wafer loading / unloading port is provided at one end of the quartz tube 11, and the other end is closed. An exhaust port 14 is formed at the inlet / outlet port. The quartz tube 11 accommodates a large number of wafers 13 mounted in a row on the quartz board 12. Gas nozzles 21 and 22 having different lengths are provided in the quartz tube 11, one gas nozzle 21 has a length reaching the inlet / outlet port of the quartz tube 11, and the other gas nozzle 22.
Has a length reaching near the center of the quartz board 12. In the gas nozzle 21, a plurality of holes 23 are formed facing the wafer 13 from the loading / unloading port side to the vicinity of the center of the board 12 as in the first embodiment. A plurality of holes 23 are formed in the gas nozzle 22 so as to face the wafer. The gas nozzle 21 is a wafer 13A arranged from the loading / unloading side of the wafer 13 to the vicinity of the center.
To supply a reaction gas containing N ₂ , O ₂ , and POCl ₃ , and the gas nozzle 22 supplies a reaction gas having the same composition to the wafer 13B arranged on the back side.
These gas nozzles are provided with a reaction gas (N ₂ ,
O ₂ and POCl ₃ gas) are introduced, and the reaction gas is discharged from the gas discharge port and the hole 23 facing the wafer 13. Then, the gas nozzles 2 having different lengths
The reaction gas is evenly fed into the entire furnace by 1, 22. The gas after the reaction is exhausted from the exhaust port 14 provided at the above-mentioned inlet / outlet port of the quartz tube 11.

As described above, even when the present invention is applied to the horizontal type Lindeposition apparatus, the reaction gas can be uniformly fed over the entire area of the furnace as in the case of the vertical type Linde deposition apparatus. , Substantially the same effect can be obtained.

[0023]

As described above, according to the present invention,
It is possible to obtain a heat treatment apparatus capable of uniformizing the surface treatment characteristics of an object to be treated within the same charge rod.

[Brief description of drawings]

FIG. 1 is a cross-sectional configuration diagram of a vertical Lindeposition apparatus for explaining a heat treatment apparatus according to a first embodiment of the present invention.

FIG. 2 is a front view and a side view showing a gas nozzle extracted from the apparatus of FIG.

FIG. 3 is a diagram showing a comparison between the mounting position of a wafer and the sheet resistance of a formed N ⁺ layer in the vertical Lindeposition apparatus of the present invention and the conventional vertical Lindeposition apparatus.

FIG. 4 is a diagram showing a comparison between a mounting position of a wafer and a variation in sheet resistance in a vertical Lindeposition apparatus of the present invention and a conventional vertical Lindeposition apparatus.

FIG. 5 is a cross-sectional configuration diagram of a horizontal Lindeposition apparatus for explaining a heat treatment apparatus according to a second embodiment of the present invention.

FIG. 6 is a cross-sectional configuration diagram of a vertical Linde deposition apparatus for explaining a conventional heat treatment apparatus.

FIG. 7 is a cross-sectional configuration diagram of a horizontal Linde deposition apparatus for explaining a conventional heat treatment apparatus.

[Explanation of symbols]

1, 9 ... Heater (heating means), 3, 11 ... Quartz tube (reactor), 4, 12 ... Quartz board, 5, 13 ... Wafer 21, 22 ... Gas nozzle (21: first gas supply means, first 1 reaction gas discharge means, 22: second gas supply means, second reaction gas discharge means), 23 ...

Claims (5)

[Claims] 1. A heat treatment apparatus for accommodating and heating a large number of objects to be processed in a reaction furnace in a state of being arranged in at least one row, and introducing a reaction gas into the reaction furnace to perform surface treatment of the objects to be processed. In, a first gas supply means for supplying a reaction gas to one side of the row of the object to be treated, and a second gas supply means for supplying a reaction gas to the other side of the row of the object to be treated are provided. A heat treatment apparatus for performing surface treatment of the object to be treated. 2. A reaction furnace containing a wafer mounted on a board, a heating means for heating the inside of the reaction furnace, and a reaction gas containing N ₂ , O ₂ and POCl ₃ in the reaction furnace. And a second reaction gas discharge means for supplying the reaction gas from the wafer side mounted near the center of the board. A heat treatment apparatus comprising a vertical phosphorus deposition apparatus for forming an N ⁺ layer on the surface of each wafer by the reaction gas discharged from the first and second reaction gas discharging means. 3. The first reaction gas discharge means is the N
A reaction gas containing ₂ , O ₂ and POCl ₃ is discharged from a portion of about ½ of the entire length of the board through a plurality of holes facing a wafer mounted on the back side of the reaction furnace. The second reaction gas discharge means supplies the reaction gas containing the N ₂ , O ₂ and POCl ₃ to about 1 of the entire length of the board.
3. The heat treatment apparatus according to claim 2, wherein the heat is supplied from a part of / 2 through a plurality of holes facing the wafer placed in front of the reaction furnace. 4. A reaction furnace containing a wafer mounted on a board, a heating means for heating the inside of the reaction furnace, and a reaction gas containing N ₂ , O ₂ and POCl ₃ in the reaction furnace. And a second reaction gas for supplying the reaction gas from the side of the wafer placed near the loading / unloading port of the board and the reaction gas for supplying the reaction gas from the side of the wafer placed near the center of the board. And a discharge means,
A heat treatment apparatus comprising a horizontal phosphorus deposition apparatus for forming an N ⁺ layer on the surface of each wafer by the reaction gas discharged from the first and second reaction gas discharging means. 5. The first reaction gas discharge means is the N
A reaction gas containing ₂ , O ₂ , and POCl ₃ is supplied from a portion of about ½ of the entire length of the board through a plurality of holes facing the wafer mounted on the loading / unloading side of the board, The second reaction gas discharge means is the N
Reacting gas containing ₂ , O ₂ and POCl ₃ is supplied from a half of the entire length of the board through a plurality of holes facing the wafer arranged on the inner side of the reaction furnace. The heat treatment apparatus according to claim 4, wherein the heat treatment apparatus is a heat treatment apparatus.