JPH06345582A - Method and device for growing concentric crystal - Google Patents
Method and device for growing concentric crystalInfo
- Publication number
- JPH06345582A JPH06345582A JP5163785A JP16378593A JPH06345582A JP H06345582 A JPH06345582 A JP H06345582A JP 5163785 A JP5163785 A JP 5163785A JP 16378593 A JP16378593 A JP 16378593A JP H06345582 A JPH06345582 A JP H06345582A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- axis
- seed crystal
- raw material
- seed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、２種類以上の異種組成
領域が同心円状に配置された断面構造を持つ結晶の育成
方法及びその装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for growing a crystal having a sectional structure in which two or more kinds of different composition regions are concentrically arranged.
【０００２】[0002]
【従来の技術】従来より、火炎溶融法結晶育成装置（ベ
ルヌーイ装置）による火炎溶融法を用いた結晶成長が、
固体レーザ素子等に用いる結晶育成に広く用いられてい
る。この装置は、図３に示すように、原料粉を供給する
原料ホッパー９と、この原料ホッパーから供給された原
料粉を火炎で溶融させるガスバーナー１と、育成結晶５
を成長させる種結晶６が垂直に配置された構成となって
いる。結晶を育成するにはまず炎２を調節して種結晶６
上部を溶融させ、原料粉３が溶融して種結晶６の上に落
ちるようにする。以後、結晶回転機構７を用いて結晶を
回転させながら結晶移動機構８で種結晶６を引き下げる
ことにより単結晶５が育成されていく。2. Description of the Related Art Conventionally, crystal growth using a flame melting method with a flame melting method crystal growing apparatus (Bernoulli apparatus) has been
It is widely used for growing crystals used for solid-state laser devices and the like. As shown in FIG. 3, this apparatus comprises a raw material hopper 9 for supplying the raw material powder, a gas burner 1 for melting the raw material powder supplied from the raw material hopper with a flame, and a grown crystal 5.
The seed crystal 6 for growing the is arranged vertically. To grow crystals, first adjust the flame 2 and seed crystals 6
The upper part is melted so that the raw material powder 3 is melted and falls on the seed crystal 6. After that, the single crystal 5 is grown by pulling down the seed crystal 6 by the crystal moving mechanism 8 while rotating the crystal by using the crystal rotating mechanism 7.
【０００３】[0003]
【発明が解決しようとする課題】従来の装置において
も、原料粉末の組成を結晶育成の進行に合わせて変化さ
せることにより、図４のように結晶の育成軸方向すなわ
ち長手方向に関して、組成がＡからＢに変化した結晶を
得ることはできていた。しかし、育成軸に垂直な方向す
なわち径方向の組成を制御することは不可能であった。
同心円状に異種組成領域を持つ結晶は、高性能な光学素
子を実現するための構造体として優れている。たとえ
ば、固体レーザ用ロッドの場合、中心部に活性イオンを
含む領域があり、その周囲に活性イオンを含まないクラ
ッド部分をもつ構造であるとすると、このロッドの周囲
から光励起を行ってレーザ発振を行う場合、励起光が能
率よく中央の発振領域に集光されるので、発振しきい値
が低下し、発振効率を高めることができる。同時に発振
光のパターンも理想的になり安定化する。また別の応用
として、リングレーザがある。これは大出力レーザを実
現するための構造の一種で、中央部に非活性領域を、そ
の周囲に活性領域を形成することによって、熱負荷がロ
ッド中央部に集中するのを回避する方式であるが、これ
も、同心円状の異種組成領域をもつような複合結晶体を
得る技術によって実現されるものである。さらに、組成
変化による屈折率変化の作用を利用して光を中央部にと
じ込める、光導波路の形成も可能である。このように、
同心円状に異種組成領域をもつ結晶は、高性能な光学素
子を実現するために有用であるが、これを実現するため
の簡便で有効な手段がなかった。本発明はこのような従
来の事情に対処してなされたもので、異種組成領域が同
心円状に配置された同心円状結晶の育成方法およびその
装置を提供することを目的とする。Even in the conventional apparatus, by changing the composition of the raw material powder in accordance with the progress of crystal growth, as shown in FIG. It was possible to obtain a crystal that changed from B to B. However, it was impossible to control the composition in the direction perpendicular to the growth axis, that is, in the radial direction.
A crystal having concentrically different composition regions is excellent as a structure for realizing a high-performance optical element. For example, in the case of a solid-state laser rod, if the structure has a region containing active ions in the center and a clad part containing no active ions around it, laser excitation is performed from around this rod. In this case, the excitation light is efficiently collected in the central oscillation region, so that the oscillation threshold value is lowered and the oscillation efficiency can be improved. At the same time, the pattern of the oscillated light becomes ideal and stabilized. Another application is a ring laser. This is a type of structure for realizing a high-power laser. It is a method of avoiding the heat load from concentrating on the center of the rod by forming an inactive region in the center and an active region around it. However, this is also realized by a technique of obtaining a composite crystal body having concentric heterogeneous composition regions. Further, it is possible to form an optical waveguide that can confine light in the central portion by utilizing the effect of the change in the refractive index due to the change in composition. in this way,
A crystal having different composition regions in a concentric circle is useful for realizing a high-performance optical element, but there has been no simple and effective means for realizing this. The present invention has been made in view of such conventional circumstances, and an object thereof is to provide a method and an apparatus for growing a concentric crystal in which heterogeneous composition regions are concentrically arranged.
【０００４】[0004]
【課題を解決するための手段】本発明は、２種類以上の
異種組成領域が同心円状に配置された断面構造を有する
結晶の育成方法であって、円筒状の種結晶をその軸が水
平になるように配置し、次いで該種結晶の軸を回転軸と
して回転させつつ、溶融した原料を軸に垂直な方向から
供給し、かつ前記種結晶を前記溶融原料の供給方向に対
して退動させることよりなり、種結晶の組成と溶融原料
の組成とが異種組成であることを特徴とする同心円状結
晶育成方法である。The present invention is a method for growing a crystal having a cross-sectional structure in which two or more kinds of different composition regions are concentrically arranged, and a cylindrical seed crystal having a horizontal axis. And then feed the molten raw material from a direction perpendicular to the axis while rotating the seed crystal with the axis of the seed crystal as a rotation axis, and retreat the seed crystal with respect to the feeding direction of the molten raw material. The concentric crystal growth method is characterized in that the composition of the seed crystal and the composition of the molten raw material are different compositions.
【０００５】また、その方法を実施するための装置は、
２種類以上の異種組成領域が同心円状に配置された断面
構造を有する結晶の育成装置であって、円筒状の種結晶
をその軸が水平になるように保持する結晶保持部と、前
記種結晶の軸を回転軸として回転させる結晶回転機構
と、前記種結晶を軸に垂直な方向に移動させる結晶移動
機構とを備え、溶融した結晶原料は前記種結晶の側面部
に供給されることを特徴とする。An apparatus for implementing the method is also
A crystal growing device having a cross-sectional structure in which two or more kinds of different composition regions are concentrically arranged, and a crystal holding part for holding a cylindrical seed crystal such that its axis is horizontal, and the seed crystal. A crystal rotation mechanism for rotating the seed crystal as a rotation axis and a crystal movement mechanism for moving the seed crystal in a direction perpendicular to the axis, and a molten crystal raw material is supplied to a side surface portion of the seed crystal. And
【０００６】[0006]
【作用】本発明では、従来用いられてきたベルヌーイ装
置の原理を利用しつつ、構成要素の配置や形状を変える
ことにより、図５に示したような断面構造、すなわち同
心円状に異なった組成の領域をもつ棒状結晶が育成され
るようにしたものである。即ち、本発明においては、種
結晶棒の長軸を水平にし、その軸を回転軸として回転さ
せて、その表面が炎で溶けるか、溶ける寸前の状態に
し、そこに、異なる組成の原料粉融体を上方から種結晶
の側面部に付着させながら種結晶を下方に移動させるこ
とにより、同心円状に組成の異なる領域を持つ結晶棒が
得られる。さらに、育成の途中で原料組成を適宜変える
ことにより複雑な断面組成領域を持つ素子の作成も可能
である。In the present invention, while utilizing the principle of the Bernoulli apparatus which has been conventionally used, the arrangement and shape of the constituent elements are changed to obtain a cross-sectional structure as shown in FIG. A rod-shaped crystal having a region is grown. That is, in the present invention, the major axis of the seed crystal rod is horizontal, and the axis is rotated about the axis of rotation, and the surface thereof is melted by a flame or is in a state of being about to melt, and there are raw material powders having different compositions. By moving the seed crystal downward while adhering the body to the side surface of the seed crystal from above, a crystal rod having concentric regions having different compositions can be obtained. Further, it is possible to produce an element having a complicated sectional composition region by appropriately changing the raw material composition during the growth.
【０００７】[0007]
【実施例】次に本発明の実施例について説明する。 実施例１ 図１は本発明による同心円状結晶育成装置の構成図であ
る。原料ホッパー９およびガスバーナー１の口金部の形
状は、その断面が図２に示したように長方形で、その長
辺の長さは、必要結晶の長さ以上とする。結晶保持部１
１に保持された種結晶６の長さも必要とする結晶以上の
ものとする。そして結晶回転機構７は種結晶がその軸を
回転軸として回転するようになっている。この結晶回転
速度は重要で、従来のベルヌーイ装置より幅広い可変範
囲を要する。結晶の移動機構８は従来の機構と全く同一
でよい。この装置を用い、種結晶棒の長軸を水平にし、
その軸を回転軸として回転させて、その表面が炎で溶け
るか、溶ける寸前の状態にし、そこに、異なる組成の原
料粉融体を上方から付着させながら種結晶を下方に移動
させることにより、同心円状に組成の異なる領域を持つ
結晶棒が得られる。さらに、育成の途中で原料組成を適
宜変えることにより複雑な断面組成領域を持つ素子の作
成も可能である。EXAMPLES Next, examples of the present invention will be described. Example 1 FIG. 1 is a configuration diagram of a concentric crystal growing apparatus according to the present invention. The shapes of the raw material hopper 9 and the mouthpiece of the gas burner 1 are rectangular in cross section as shown in FIG. 2, and the length of the long side is not less than the length of the necessary crystal. Crystal holder 1
The length of the seed crystal 6 held at 1 is not less than the required crystal. The crystal rotation mechanism 7 is configured so that the seed crystal rotates about its axis. This crystal rotation speed is important and requires a wider variable range than conventional Bernoulli devices. The crystal moving mechanism 8 may be exactly the same as the conventional mechanism. With this device, the major axis of the seed crystal rod is made horizontal,
By rotating that axis as a rotation axis, the surface is melted by a flame or is in the state of being about to melt, by moving the seed crystal downward while adhering the raw material powder melts of different compositions from above, A crystal rod having concentric regions with different compositions can be obtained. Further, it is possible to produce an element having a complicated sectional composition region by appropriately changing the raw material composition during the growth.
【０００８】実施例２ 実施例１記載の装置を用い、種結晶棒としてＮｄを１％
含む直径４ｍｍ、有効長１０ｍｍのＹ3Ａｌ5Ｏ12（ＹＡ
Ｇ）棒を用いた。炎を調節し、水平に置いた種結晶棒の
上部のみが半溶融状態になるようにしてからＹＡＧ原料
粉末を上部ホッパーから供給し、結晶棒を毎時３ｍｍの
速度で下方に移動させた。結晶回転速度は毎分６回転と
した。１時間の付着実験育成の結果得られた結晶棒は直
径約７ｍｍで周囲の約３ｍｍの部分がＮｄを含まない領
域であった。また同寸法のＮｄを含まない種結晶ＹＡＧ
結晶棒を用い、Ｎｄ１．５％を含むＹＡＧ原料粉末を用
いて同様に結晶育成を行い、リング状に活性領域をもつ
固体レーザロッドを得ることができた。Example 2 Using the apparatus described in Example 1, 1% of Nd was used as a seed crystal rod.
Includes a diameter of 4 mm and an effective length of 10 mm Y 3 Al 5 O 12 (YA
G) A stick was used. The flame was adjusted so that only the upper portion of the horizontally placed seed crystal rod was in a semi-molten state, and then the YAG raw material powder was supplied from the upper hopper, and the crystal rod was moved downward at a speed of 3 mm per hour. The crystal rotation speed was 6 rotations per minute. The crystal rod obtained as a result of the 1-hour adhesion experiment growth had a diameter of about 7 mm and a peripheral portion of about 3 mm was a region containing no Nd. Seed crystal YAG of the same size without Nd
Crystal growth was similarly performed using a crystal rod and YAG raw material powder containing 1.5% of Nd, and a solid-state laser rod having a ring-shaped active region could be obtained.
【０００９】[0009]
【発明の効果】以上説明したように、本発明によれば、
たとえばクラッド付きレーザロッド等の異なった光学特
性をもつ領域で囲まれた光学素子を製作することができ
る。この方法は量産化に適しており、製造コストも低
い。さらに種結晶に他の育成方法で得られた結晶を用い
ることができるのも利点のひとつである。本発明は実施
例で説明した以外の多くの光学素子の作製にも広く応用
可能である。As described above, according to the present invention,
For example, it is possible to fabricate an optical element surrounded by regions having different optical properties, such as a clad laser rod. This method is suitable for mass production and has a low manufacturing cost. Furthermore, it is one of the advantages that a crystal obtained by another growing method can be used as the seed crystal. The present invention can be widely applied to manufacture many optical elements other than those described in the embodiments.
【図１】本発明による結晶育成装置の構成図である。FIG. 1 is a configuration diagram of a crystal growth apparatus according to the present invention.
【図２】本発明による結晶育成装置のバーナー口金部を
示す図である。FIG. 2 is a view showing a burner cap portion of the crystal growing apparatus according to the present invention.
【図３】従来の火炎溶融型結晶育成装置の構成図であ
る。FIG. 3 is a configuration diagram of a conventional flame melting type crystal growing device.
【図４】従来の育成結晶の組成構造を示す図である。FIG. 4 is a diagram showing a composition structure of a conventional grown crystal.
【図５】本発明による育成結晶の組成断面構造を示す図
である。FIG. 5 is a diagram showing a composition cross-sectional structure of a grown crystal according to the present invention.
１ ガスバーナー ２ 火炎 ３ 原料粉 ４ 溶融体 ５ 育成結晶 ６ 種結晶（棒） ７ 結晶回転機構 ８ 結晶移動機構 ９ 原料ホッパー １０ メッシュ １１ 結晶保持部 DESCRIPTION OF SYMBOLS 1 Gas burner 2 Flame 3 Raw material powder 4 Melt 5 Growth crystal 6 Seed crystal (rod) 7 Crystal rotation mechanism 8 Crystal movement mechanism 9 Raw material hopper 10 Mesh 11 Crystal holding part
Claims (2)
配置された断面構造を有する結晶の育成方法であって、
円筒状の種結晶をその軸が水平になるように配置し、次
いで該種結晶の軸を回転軸として回転させつつ、溶融し
た原料を軸に垂直な方向から供給し、かつ前記種結晶を
前記溶融原料の供給方向に対して退動させることよりな
り、種結晶の組成と溶融原料の組成とが異種組成である
ことを特徴とする同心円状結晶育成方法。1. A method for growing a crystal having a sectional structure in which two or more kinds of different composition regions are concentrically arranged,
A cylindrical seed crystal is arranged so that its axis is horizontal, and then while the axis of the seed crystal is rotated as a rotation axis, the molten raw material is supplied from a direction perpendicular to the axis, and the seed crystal is A method for growing a concentric crystal, which is characterized in that the composition of the seed crystal and the composition of the melting raw material are different compositions, which is made to recede with respect to the supply direction of the melting raw material.
配置された断面構造を有する結晶の育成装置であって、
円筒状の種結晶をその軸が水平になるように保持する結
晶保持部と、前記種結晶の軸を回転軸として回転させる
結晶回転機構と、前記種結晶を軸に垂直な方向に移動さ
せる結晶移動機構とを備え、溶融した結晶原料は前記種
結晶の側面部に供給されることを特徴とする同心円状結
晶育成装置。2. A crystal growing device having a cross-sectional structure in which two or more kinds of different composition regions are concentrically arranged,
A crystal holding unit that holds a cylindrical seed crystal so that its axis is horizontal, a crystal rotation mechanism that rotates the seed crystal axis around the axis of rotation, and a crystal that moves the seed crystal in a direction perpendicular to the axis. A concentric crystal growing device comprising a moving mechanism, and a melted crystal raw material is supplied to a side surface portion of the seed crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5163785A JPH06345582A (en) | 1993-06-10 | 1993-06-10 | Method and device for growing concentric crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5163785A JPH06345582A (en) | 1993-06-10 | 1993-06-10 | Method and device for growing concentric crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06345582A true JPH06345582A (en) | 1994-12-20 |
Family
ID=15780667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5163785A Pending JPH06345582A (en) | 1993-06-10 | 1993-06-10 | Method and device for growing concentric crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06345582A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002220287A (en) * | 2001-01-19 | 2002-08-09 | Shinetsu Quartz Prod Co Ltd | Translucent ceramic and its manufacturing method |
| JP2002220278A (en) * | 2001-01-19 | 2002-08-09 | Shinetsu Quartz Prod Co Ltd | Light-transmitting ceramic and method of manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5266443A (en) * | 1975-11-29 | 1977-06-01 | Sumitomo Electric Ind Ltd | Production of glass fibers for light transmission |
| JPS5843336A (en) * | 1981-09-09 | 1983-03-14 | Hitachi Ltd | Fan casing for window type room air conditioner |
| JPH03149504A (en) * | 1989-11-07 | 1991-06-26 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of single-crystal optical fiber |
-
1993
- 1993-06-10 JP JP5163785A patent/JPH06345582A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5266443A (en) * | 1975-11-29 | 1977-06-01 | Sumitomo Electric Ind Ltd | Production of glass fibers for light transmission |
| JPS5843336A (en) * | 1981-09-09 | 1983-03-14 | Hitachi Ltd | Fan casing for window type room air conditioner |
| JPH03149504A (en) * | 1989-11-07 | 1991-06-26 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of single-crystal optical fiber |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002220287A (en) * | 2001-01-19 | 2002-08-09 | Shinetsu Quartz Prod Co Ltd | Translucent ceramic and its manufacturing method |
| JP2002220278A (en) * | 2001-01-19 | 2002-08-09 | Shinetsu Quartz Prod Co Ltd | Light-transmitting ceramic and method of manufacturing the same |
| JP4587350B2 (en) * | 2001-01-19 | 2010-11-24 | 信越石英株式会社 | Method for producing translucent ceramic body |
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