JPH0634305U - Magnetostatic wave resonator - Google Patents
Magnetostatic wave resonatorInfo
- Publication number
- JPH0634305U JPH0634305U JP7581392U JP7581392U JPH0634305U JP H0634305 U JPH0634305 U JP H0634305U JP 7581392 U JP7581392 U JP 7581392U JP 7581392 U JP7581392 U JP 7581392U JP H0634305 U JPH0634305 U JP H0634305U
- Authority
- JP
- Japan
- Prior art keywords
- magnetostatic wave
- thin film
- wave resonator
- electrode fingers
- oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
(57)【要約】 (修正有)
【目的】 静磁波共振子を用いた発振器の位相雑音の改
善を行うこと。
【構成】 非磁性基板1上に液相エピタキシャル成長法
によりフェリ磁性薄膜2を形成し、薄膜2上に電極指6
を静磁波の伝搬する反射端面7a,7bのどちらか一方
に集中して形成した構造の静磁波共振子。
(57) [Summary] (Modified) [Purpose] To improve the phase noise of an oscillator using a magnetostatic wave resonator. [Structure] A ferrimagnetic thin film 2 is formed on a non-magnetic substrate 1 by a liquid phase epitaxial growth method, and electrode fingers 6 are formed on the thin film 2.
Of the magnetostatic wave propagating on either one of the reflection end faces 7a and 7b through which the magnetostatic wave propagates.
Description
【0001】[0001]
本考案は、GGG(ガドリニウム・ガリウム・ガーネット)等の非磁性基板上 に形成したYIG(イットリウム・鉄・ガーネット)等のフェリ磁性薄膜の磁気 スピン共鳴を利用した静磁波共振子に関わり、発振器等に用いた場合その位相雑 音を向上させるものである。 The present invention relates to a magnetostatic wave resonator using magnetic spin resonance of a ferrimagnetic thin film such as YIG (yttrium, iron, garnet) formed on a non-magnetic substrate such as GGG (gadolinium, gallium, garnet), an oscillator, etc. When used for, it improves the phase noise.
【0002】[0002]
GGG非磁性基板上に、液相エピタキシャル成長させたYIG薄膜を所要の形 状に加工したフェリ磁性薄膜静磁波共振子が提案されている。 図2(a)、(b)は従来の静磁波共振子の構造を示したものである。図にお いて静磁波共振子はGGG基板1の上にYIG薄膜2を液相エピタキシャル法に より形成し、更にこの薄膜上にAuあるいはAl膜からなる一本または複数本の 電極指3及びこれらの電極指3の両側にパッド電極4a、4bを写真蝕刻技術に より形成した構造となっており、所望の大きさにダイサー加工等を施され、誘電 体基板5上に設置される。ここで電極指3は不要共振モード等が除去されるよう 計算され規則正しく配列性を持ち、中心線X―Xに対し線対称であるように形成 されている。 この静磁波共振子に外部から磁場がYIG薄膜2に垂直に印加されると静磁波 が励起されることを利用し発振器等の共振器として用いられている。 There has been proposed a ferrimagnetic thin film magnetostatic wave resonator obtained by processing a liquid phase epitaxially grown YIG thin film into a required shape on a GGG non-magnetic substrate. 2A and 2B show a structure of a conventional magnetostatic wave resonator. In the figure, a magnetostatic wave resonator is formed by forming a YIG thin film 2 on a GGG substrate 1 by a liquid phase epitaxial method, and further forming one or a plurality of electrode fingers 3 made of Au or Al film on these thin films and these electrodes. The pad electrodes 4a and 4b are formed on both sides of the electrode finger 3 by a photo-etching technique. The pad electrodes 4a and 4b are diced to a desired size, and are placed on the dielectric substrate 5. Here, the electrode fingers 3 are calculated so that unnecessary resonance modes and the like are removed, have regular arraying, and are formed so as to be line-symmetric with respect to the center line XX. The magnetostatic wave resonator is used as a resonator such as an oscillator by utilizing the fact that a magnetostatic wave is excited when a magnetic field is applied to the YIG thin film 2 from the outside perpendicularly to the magnetostatic wave resonator.
【0003】[0003]
前述したような電極指の配列および対称性をくずすことなく加工するには精度 が要求されるが、作業によっては精度が若干異なることがあり、そのため静磁波 共振子の共振特性ばらつきや劣化が生じ、その結果、発振器の位相雑音が劣化し てしまう問題があった。この時の発振器の位相雑音を測定した結果、図3(b) のようになった。 Precision is required to process without breaking the arrangement and symmetry of the electrode fingers as described above, but the precision may be slightly different depending on the work, which causes variations and deterioration in the resonance characteristics of the magnetostatic wave resonator. As a result, there was a problem that the phase noise of the oscillator deteriorates. As a result of measuring the phase noise of the oscillator at this time, the result is as shown in FIG.
【0004】[0004]
本考案は前記課題を解決するために、非磁性基板上にフェリ磁性薄膜を形成し 、前記フェリ磁性薄膜上に一本または複数本の電極指とパッド電極を形成して、 前記フェリ磁性薄膜の内部にマイクロ波帯にて静磁波を励起、伝搬、共鳴を起こ させる構造とした静磁波共振子であって、前記電極指が静磁波の伝搬する反射端 面のどちらか一方に集中して形成されていることを特徴とする静磁波共振子であ る。 In order to solve the above problems, the present invention forms a ferrimagnetic thin film on a nonmagnetic substrate, forms one or more electrode fingers and a pad electrode on the ferrimagnetic thin film, and A magnetostatic wave resonator having a structure that excites, propagates, and resonates a magnetostatic wave in the microwave band, and is formed by the electrode fingers concentrated on one of the reflection end faces through which the magnetostatic wave propagates. It is a magnetostatic wave resonator characterized by being used.
【0005】[0005]
以下本考案を実施例に基づいて詳しく説明する。 図1(a)、(b)は本考案の実施例を示す図である。GGG基板1の上にY IG薄膜2を液相エピタキシャル法により形成し、更にこの薄膜上にAuあるい はAl膜からなる一本または複数本の電極指6及びこれらの電極指6の両側にパ ッド電極4a、4bを写真蝕刻技術により形成したものであり、所望の大きさに ダイサー加工等を施され、誘電体基板5上に設置される。ここで電極指6は図1 (b)に示すように、静磁波の伝搬する反射端面7a側に集中して形成してある 。このような構造の静磁波共振子を共振器に用い、発振器を作製して位相雑音を 測定した結果、図3(a)のようになり、従来構造の共振子を用いた場合に比べ 約3dBの位相雑音の改善が確認された。また、従来構造の静磁波共振子を用い た発振器にみられるような、共振子の加工精度による位相雑音の劣化はみられな かった。また、本実施例では電極指6は反射端面7a側に形成したが、もう一方 の反射端面7b側に集中して形成した場合でも同様の効果がみられる。 Hereinafter, the present invention will be described in detail based on embodiments. 1A and 1B are views showing an embodiment of the present invention. A Y IG thin film 2 is formed on a GGG substrate 1 by a liquid phase epitaxial method, and one or a plurality of electrode fingers 6 made of Au or Al film are formed on this thin film and both sides of these electrode fingers 6 are formed. The pad electrodes 4a and 4b are formed by a photo-etching technique, and are diced into a desired size, and placed on the dielectric substrate 5. Here, as shown in FIG. 1B, the electrode fingers 6 are formed in a concentrated manner on the side of the reflection end face 7a where the magnetostatic wave propagates. A magnetostatic wave resonator having such a structure is used as a resonator, and an oscillator is produced to measure the phase noise. The result is as shown in FIG. It was confirmed that the phase noise was improved. In addition, the deterioration of phase noise due to the processing accuracy of the resonator, which is seen in oscillators using conventional magnetostatic wave resonators, was not observed. Further, in the present embodiment, the electrode fingers 6 are formed on the side of the reflection end surface 7a, but the same effect can be obtained even when the electrode fingers 6 are concentrated on the side of the other reflection end surface 7b.
【0006】[0006]
以上述べた通り、本考案によれば、静磁波共振子のフェリ磁性薄膜上に形成さ れる電極指を静磁波の伝搬する反射端面のどちらか一方に集中して形成すること により、共振子の加工精度による共振特性のばらつき、劣化を抑制し、発振器の 位相雑音を改善を図ることができる。 As described above, according to the present invention, the electrode fingers formed on the ferrimagnetic thin film of the magnetostatic wave resonator are concentrated on either one of the reflection end faces through which the magnetostatic wave propagates. It is possible to improve the phase noise of the oscillator by suppressing the variation and deterioration of the resonance characteristic due to the processing accuracy.
【図1】(a)は本考案による実施例を示す斜視図であ
り、(b)は平面図である。FIG. 1A is a perspective view showing an embodiment according to the present invention, and FIG. 1B is a plan view.
【図2】(a)は従来技術による斜視図であり、(b)
は平面図である。FIG. 2 (a) is a perspective view according to the related art, and FIG.
Is a plan view.
【図3】(a)は本考案による発振器の位相雑音の周波
数特性図であり、(b)は従来技術による発振器の位相
雑音の周波数特性図である。FIG. 3A is a frequency characteristic diagram of phase noise of an oscillator according to the present invention, and FIG. 3B is a frequency characteristic diagram of phase noise of an oscillator according to the related art.
1 GGG基板 2 YIG薄膜 3、6 電極指 4a、4b パッド電極 5 誘電体基板 7a、7b 反射端面 1 GGG substrate 2 YIG thin film 3, 6 Electrode fingers 4a, 4b Pad electrode 5 Dielectric substrate 7a, 7b Reflection end face
Claims (1)
し、前記フェリ磁性薄膜上に一本または複数本の電極指
とパッド電極を形成して、前記フェリ磁性薄膜の内部に
マイクロ波帯にて静磁波を励起、伝搬、共鳴を起こさせ
る構造とした静磁波共振子であって、前記電極指が静磁
波の伝搬する反射端面のどちらか一方に集中して形成さ
れていることを特徴とする静磁波共振子。1. A ferrimagnetic thin film is formed on a non-magnetic substrate, and one or more electrode fingers and a pad electrode are formed on the ferrimagnetic thin film so that a microwave band is formed inside the ferrimagnetic thin film. A magnetostatic wave resonator having a structure that excites, propagates, and resonates a magnetostatic wave, characterized in that the electrode fingers are formed in a concentrated manner on either one of the reflection end faces through which the magnetostatic wave propagates. Magnetostatic wave resonator.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7581392U JPH0634305U (en) | 1992-10-06 | 1992-10-06 | Magnetostatic wave resonator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7581392U JPH0634305U (en) | 1992-10-06 | 1992-10-06 | Magnetostatic wave resonator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0634305U true JPH0634305U (en) | 1994-05-06 |
Family
ID=13587001
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7581392U Pending JPH0634305U (en) | 1992-10-06 | 1992-10-06 | Magnetostatic wave resonator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0634305U (en) |
-
1992
- 1992-10-06 JP JP7581392U patent/JPH0634305U/en active Pending
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