JPH06338005A - Magnetic recording and reproducing device - Google Patents

Magnetic recording and reproducing device

Info

Publication number
JPH06338005A
JPH06338005A JP5145399A JP14539993A JPH06338005A JP H06338005 A JPH06338005 A JP H06338005A JP 5145399 A JP5145399 A JP 5145399A JP 14539993 A JP14539993 A JP 14539993A JP H06338005 A JPH06338005 A JP H06338005A
Authority
JP
Japan
Prior art keywords
circuit
change
oscillation
resistance
recorded information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5145399A
Other languages
Japanese (ja)
Inventor
Hiromichi Shibatani
弘道 柴谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP5145399A priority Critical patent/JPH06338005A/en
Publication of JPH06338005A publication Critical patent/JPH06338005A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a magnetic recording/reproducing device capable of detecting with a large signal amplitude against a noise. CONSTITUTION:An MR element 1, an inductance element 2 and a capacitance element 3 constitute a parallel resonance circuit as described in the figure and equivalently represent an impedance 4, then by combining it with capacitances 5, 6 and transistor 7, a colpitts type oscillating circuit is formed. When the equivalent impedance 4 becomes inductive by the change of a resistance R of the MR element, this colpitts type oscillating circuit is oscillated, thereby a sine-wave oscillating signal is obtained on an output terminal 8. When the equivalent impedance 4 becomes capacitive by the change of the resistance R, the colpitts type oscillating circuit is not formed and the oscillation is stopped, then the signal is not appeared on the output terminal. As the whole constitution, the resistance R is changed by magnetization of the medium such as a magnetic tape, etc., therefore, the oscillating state or the oscillation stopped state is formed in accordance with this change, and conversely the signal of the magnetic tape, etc., is detected from these states.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、磁気抵抗効果を利用し
て、磁気ディスクまたは磁気テープから記録情報を読み
出す磁気記録再生装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording / reproducing apparatus for reading recorded information from a magnetic disk or a magnetic tape by utilizing a magnetoresistive effect.

【0002】[0002]

【従来の技術】従来、磁気抵抗効果を利用する磁気再生
素子は、例えば、西川著:「磁気記録の理論」朝倉書店
1986.7月版9頁に記載されている。即ち、図4に
示す如くMR(磁気抵抗)素子1、直流電源13、電流
制限抵抗14、リード線15,16、信号出力端子1
7,18より構成されており、磁気記録層19の中の媒
体磁化20から発生する垂直方向磁界Hyにより、MR
素子1の磁化が、図4に示す如くi方向からM方向に変
化し、MR素子1の電気抵抗率ρがiとMのなす角θに
よって △ρ=△ρmcos2θ (5) だけ変化し、これに応じてMR素子の端子電圧eが、図
4(b)の等価回路で示したように変化するので、これ
を再生信号として取り出す。尚、△ρmはρの最大変化
量である。
2. Description of the Related Art Conventionally, a magnetic reproducing element utilizing the magnetoresistive effect is described, for example, in Nishikawa: "Theory of Magnetic Recording", Asakura Shoten, 1986. July edition, page 9. That is, as shown in FIG. 4, an MR (magnetoresistive) element 1, a DC power source 13, a current limiting resistor 14, lead wires 15 and 16, a signal output terminal 1
7 and 18, and the MR is generated by the perpendicular magnetic field Hy generated from the medium magnetization 20 in the magnetic recording layer 19.
The magnetization of the element 1 changes from the i direction to the M direction as shown in FIG. 4, and the electric resistivity ρ of the MR element 1 is Δρ = Δρ m cos 2 θ (5) depending on the angle θ formed by i and M. It changes, and accordingly, the terminal voltage e of the MR element changes as shown in the equivalent circuit of FIG. 4B, and this is taken out as a reproduction signal. Note that Δρ m is the maximum change amount of ρ.

【0003】ここで、MR素子はNi−Feなどの薄膜
で、予め直流電源13から電流制限抵抗14を通して、
MR素子1に記録トラック幅21方向に平行にiなる直
流電流を流しておく。
Here, the MR element is a thin film of Ni-Fe or the like, which is previously passed from the DC power source 13 through the current limiting resistor 14.
A direct current of i is applied to the MR element 1 in parallel with the recording track width 21.

【0004】実際には感度を上げるためと、直線性を向
上させるために、図5(a)にM0で示すようにバイア
ス磁界を外部から印加することにより、基準の動作角θ
0を45°とし、同図(b)に示すように、式(5)で
表される抵抗率変化の中腹の点にもってくる。
In practice, in order to increase the sensitivity and to improve the linearity, a bias magnetic field is externally applied as indicated by M 0 in FIG.
When 0 is set to 45 °, it comes to the middle point of the resistivity change represented by the equation (5) as shown in FIG.

【0005】このときのMR素子1の全抵抗Rの値をR
0とし、動作角θが±△θだけ変化した場合、全抵抗は
(R0±△R)に変わるものとする。従来、一般にMR
素子1として用いられているNi−Feや、Co−Fe
の薄膜の場合、△R/R0の値は2〜3%と非常に小さ
いものである。
The value of the total resistance R of the MR element 1 at this time is R
When the operating angle θ changes by ± Δθ, the total resistance changes to (R 0 ± ΔR). Conventionally, generally MR
Ni-Fe and Co-Fe used as the element 1
In the case of the above thin film, the value of ΔR / R 0 is as small as 2-3%.

【0006】[0006]

【発明が解決しようとする課題】従来のMRヘッドから
の再生信号の取り出し方は、図4(b)の等価回路に示
すように、MR素子1の両端に誘起される電圧をそのま
ま利用していたので、次のような欠点があった。
As shown in the equivalent circuit of FIG. 4 (b), the conventional method of extracting the reproduction signal from the MR head utilizes the voltage induced across the MR element 1 as it is. Therefore, there were the following drawbacks.

【0007】即ち、MR素子1の抵抗分Rの変化分を△
Rとすると、外部磁界が零の時の抵抗分R0との比△R
/R0の値は、2〜3%であるので、検出感度が低い。
That is, the change amount of the resistance component R of the MR element 1 is Δ
Let R be the ratio ΔR with the resistance R 0 when the external magnetic field is zero.
Since the value of / R 0 is 2-3%, the detection sensitivity is low.

【0008】本発明はかかる課題を解決するためになさ
れたもので、微弱な変化しかない抵抗分可変素子のみか
らの出力ではなくて、ノイズに対して信号振幅の大きな
検出が可能な磁気記録再生装置を得ることを目的とす
る。
The present invention has been made to solve the above problems, and magnetic recording / reproduction capable of detecting a large signal amplitude with respect to noise, rather than an output from only a resistance variable element which has only a weak change. The purpose is to obtain the device.

【0009】[0009]

【課題を解決するための手段】上記の目的を達成するた
めに、この発明の磁気記録再生装置は、請求項1におい
て、磁気抵抗素子、インダクタンス素子、及びキャパシ
タンス素子からなる並列共振回路と、2つの直列接続し
たキャパシタンス素子と、を並列に接続した回路をトラ
ンジスタに接続してなるコルピッツ型発振回路であっ
て、前記磁気抵抗素子の抵抗変化をリアクタンスの変化
に変換して、前記コルピッツ型発振回路の発振出力を、
前記磁気抵抗素子からの記録情報として読み出すもので
あり、請求項2において、(磁気抵抗素子、インダクタ
ンス素子、及びキャパシタンス素子からなる並列共振回
路と、もしくは、)磁気抵抗素子、インダクタンス素
子、及びキャパシタンス素子からなる並列共振回路と直
列に接続したインダクタンス素子と、キャパシタンス素
子と、を並列に接続した回路をトランジスタに設けたハ
ートレイ型発振回路であって、前記磁気抵抗素子の抵抗
変化をリアクタンスの変化に変換して、前記ハートレイ
型発振回路の発振出力を、前記磁気抵抗素子からの記録
情報として読み出すものであり、請求項3において、磁
気抵抗素子、インダクタンス素子、及びキャパシタンス
素子からなる並列共振回路と、キャパシタンス素子とを
直列に接続した回路を、トランジスタに接続してなるコ
ルピッツ型発振回路であって、前記磁気抵抗素子の抵抗
変化をリアクタンスの変化に変換して、前記コルピッツ
型発振回路の発振出力を、前記磁気抵抗素子からの記録
情報として読み出すものであり、さらに請求項4におい
て、磁気抵抗素子、インダクタンス素子、及びキャパシ
タンス素子からなる並列共振回路と、インダクタンス素
子を直列に接続した回路を、トランジスタに接続してな
るハートレイ型の発振回路であって、前記磁気抵抗素子
の抵抗変化をリアクタンスの変化に変換して、前記ハー
トレイ型発振回路の発振出力を、前記磁気抵抗素子から
の記録情報として読み出すものである。
In order to achieve the above object, a magnetic recording / reproducing apparatus of the present invention is characterized in that, in claim 1, a parallel resonance circuit comprising a magnetoresistive element, an inductance element and a capacitance element, and 2 A Colpitts type oscillation circuit in which a circuit in which two capacitance elements connected in series are connected in parallel is connected to a transistor, wherein a resistance change of the magnetoresistive element is converted into a change in reactance, and the Colpitts type oscillation circuit is provided. Oscillation output of
The data is read out as recorded information from the magnetoresistive element, and in claim 2, a magnetic resonance element, an inductance element, and a capacitance element (or a parallel resonance circuit including a magnetoresistive element, an inductance element, and a capacitance element). A Hartley oscillator circuit in which a transistor is provided with a circuit in which an inductance element connected in series with a parallel resonant circuit consisting of and a capacitance element are provided in a transistor, and the resistance change of the magnetoresistive element is converted into a change in reactance. Then, the oscillation output of the Hartley type oscillation circuit is read out as recorded information from the magnetoresistive element, and the parallel resonance circuit including a magnetoresistive element, an inductance element and a capacitance element, and Circuit with elements connected in series , A Colpitts type oscillation circuit connected to a transistor, wherein a resistance change of the magnetoresistive element is converted into a change of reactance, and an oscillation output of the Colpitts type oscillation circuit is recorded as information recorded from the magnetoresistive element. In addition, a Hartley oscillation circuit according to claim 4, wherein a parallel resonance circuit including a magnetic resistance element, an inductance element, and a capacitance element and a circuit in which an inductance element is connected in series are connected to a transistor. Therefore, the change in resistance of the magnetoresistive element is converted into a change in reactance, and the oscillation output of the Hartley oscillation circuit is read out as recorded information from the magnetoresistive element.

【0010】[0010]

【作用】本発明は、磁気抵抗(MR)素子などの抵抗分
可変素子をインダクタンス,キャパシタンス素子と組み
合わせて共振回路を構成し、抵抗変化をリアクタンスの
変化に変換して、前述の共振回路などから成る発振回路
の発振条件に近い条件を満たすことにより、微弱な抵抗
変化を発振の有無に転換し、それにより外部磁界の検出
感度を大幅に向上している。
According to the present invention, a variable resistance element such as a magnetoresistive (MR) element is combined with an inductance and a capacitance element to form a resonance circuit, and a resistance change is converted into a change in reactance. A weak resistance change is converted into the presence or absence of oscillation by satisfying the conditions close to the oscillation conditions of the oscillating circuit, thereby significantly improving the detection sensitivity of the external magnetic field.

【0011】[0011]

【実施例】【Example】

(実施例1)図1は本発明の第1の実施例を示す回路図
である。同図において、1はMR素子、2はインダクタ
ンス素子、3はキャパシタンス素子で、これらは、図の
ような並列共振回路を構成し、等価的にインピーダンス
4を構成し、キャパシタンス5,6とを組み合わせてト
ランジスタ7のベース・コレクタ間に結合してコルピッ
ツ型発振回路を成している。
(Embodiment 1) FIG. 1 is a circuit diagram showing a first embodiment of the present invention. In the figure, 1 is an MR element, 2 is an inductance element, 3 is a capacitance element, and these constitute a parallel resonance circuit as shown in the figure, equivalently configure an impedance 4, and combine capacitances 5 and 6. Is connected between the base and collector of the transistor 7 to form a Colpitts type oscillation circuit.

【0012】そして、等価インピーダンス4がMR素子
1の抵抗Rの変化により、インダクティブになると、こ
のコルピッツ型発振回路は発振し、出力端子8に正弦波
発振信号が得られる。一方、同じく抵抗Rの変化によ
り、キャパシティブになると、図1はコルピッツ型発振
回路を構成せず、発振は停止し、出力端子に信号は現れ
ない。全構成としては、磁気テープなどの媒体磁化によ
り、抵抗Rが変化するので、この変化により図1の回路
は発振或いは発振停止の状態となり、逆に、この状態か
ら磁気テープなどの信号を検出できる。
When the equivalent impedance 4 becomes inductive due to the change of the resistance R of the MR element 1, this Colpitts type oscillation circuit oscillates and a sine wave oscillation signal is obtained at the output terminal 8. On the other hand, when the resistance R is also changed to be capacitive, the Colpitts oscillator circuit is not configured in FIG. 1, the oscillation is stopped, and the signal does not appear at the output terminal. In the entire configuration, the resistance R changes due to the magnetization of the medium such as the magnetic tape, so that the change causes the circuit of FIG. .

【0013】次に、図1の点線の枠で囲んだ等価インピ
ーダンス4の動作につき詳述する。
Next, the operation of the equivalent impedance 4 surrounded by the dotted line frame in FIG. 1 will be described in detail.

【0014】端子11,12からみたインピーダンスZ
は、 Z=[{(R+jωL)/jωC}/{R+jωL+(1/jωC)}] =[R+jω{L(1-ω2LC)-CR2}]/{1-ω2(LC+C2R2)} (1) で表され、リアクタンス分Xは、 X=ω{L(1-ω2LC)-CR2}/{1-ω2(LC+C2R2)} (2) となる。ここで抵抗分RがR0を中心値として、±△R
変化すると、 R=R0±△R (3) で表され、式(2)は、 X=ω{L(1-ω2LC)-C(R0±△R)2}/[1-ω2{LC-C2(R0±△R)2}] (4) となる。このリアクタンス分は角周波数ωと共に図3の
ように変化し、その変化は、R=R0のときは実線で示
すように、R=R0+△Rのときは破線で示すように、
R=R0−△Rのときには一点鎖線で示すようになる。
即ち、特定の角周波数での等価インピーダンス4のリア
クタンス成分をRの変化により、インダクティブにもキ
ャパシティブにもすることが可能となる。
Impedance Z as seen from terminals 11 and 12
Is Z = [{(R + jωL) / jωC} / {R + jωL + (1 / jωC)}] = [R + jω {L (1-ω 2 LC) -CR 2 }] / {1-ω 2 (LC + C 2 R 2 )} (1), and the reactance component X is X = ω {L (1-ω 2 LC) -CR 2 } / {1-ω 2 (LC + C 2 R 2 )} (2). Here, the resistance R is ± ΔR with R 0 as the center value.
When it changes, it is represented by R = R 0 ± ΔR (3), and the equation (2) is expressed by X = ω {L (1-ω 2 LC) -C (R 0 ± ΔR) 2 } / [1- ω 2 {LC-C 2 (R 0 ± △ R) 2 }] (4) The reactance is changed as shown in FIG. 3 with the angular frequency omega, the change, as when the R = R 0 shown by a solid line, when the R = R 0 + △ R as shown by the broken line,
When R = R 0 −ΔR, it becomes as indicated by the alternate long and short dash line.
That is, the reactance component of the equivalent impedance 4 at a specific angular frequency can be made inductive or capacitive by changing R.

【0015】尚、図3において、ωR0は、R=R0
時、式(4)の分母が零になる角周波数、ω +△Rは、R
=R0+△Rの時、式(4)の分母が零になる角周波
数、ω -△RはR=R0−△Rの時、式(4)の分母が零
となる角周波数である。そして、図3に斜線で示した等
価インピーダンス4がインダクティブになる範囲での
み、図1のコルピッツ型発振器が発振するので、特定の
R値(RCとする)よりも大きなRの範囲で発振するよ
うに図1の回路定数L,C,C1,C2を設定できる。こ
の場合、図4(a)において、磁気記録装置19の媒体
磁化20による媒体表面垂直磁界Hyの強度により、M
R素子1の抵抗率ρが式(5)のように変化するので、
媒体磁化20と図1の発振回路の発振,発振停止の二つ
の状態を、図6(a)〜(d)に示すように媒体磁化の
極性に対応させることができ、媒体磁化20の向きを検
出できる。
In FIG. 3, ωR0Is R = R0of
When, the angular frequency at which the denominator of equation (4) becomes zero, ω + △ RIs R
= R0Angular frequency where the denominator of equation (4) becomes zero when + ΔR
Number, ω -△ RIs R = R0-When ΔR, the denominator of equation (4) is zero.
Is the angular frequency. Then, the hatched lines in FIG.
In the range where the valence impedance 4 becomes inductive
Only the Colpitts oscillator of Fig. 1 oscillates, so
R value (RCAnd oscillates in the range of R larger than
Sea urchin circuit constants L, C, C1, C2Can be set. This
4A, the medium of the magnetic recording device 19
Depending on the strength of the magnetic field Hy perpendicular to the medium surface due to the magnetization 20,
Since the resistivity ρ of the R element 1 changes as shown in equation (5),
Medium magnetization 20 and oscillation of oscillation circuit of FIG. 1 and oscillation stop
Of the medium magnetization as shown in FIGS.
The orientation of the medium magnetization 20 can be detected by adjusting the polarity.
You can get out.

【0016】(実施例2)図2は本発明の第2の実施例
を示す回路図である。また図2において、図1と同一も
しくは同一の機能を有するものには同一の符号を付して
いる。即ち、本実施例では、図1のコルピッツ型発振回
路の代わりに、ハートレイ型発振回路を用いるものであ
る。図2に示す例では、等価インピーダンス4は、その
リアクタンス分が、インダクティブとなる範囲で動作し
ており、L2として発振回路を構成しているが、L1を等
価インピーダンス4で置き代えて発振回路を構成するこ
ともできる。
(Embodiment 2) FIG. 2 is a circuit diagram showing a second embodiment of the present invention. Further, in FIG. 2, the same reference numerals are given to those having the same or the same functions as those in FIG. That is, in this embodiment, a Hartley type oscillation circuit is used instead of the Colpitts type oscillation circuit of FIG. In the example shown in FIG. 2, the equivalent impedance 4, the reactance component is, is operating in a range of the inductive and also forms the oscillation circuit as L 2, instead of placing the L 1 in equivalent impedance 4 Oscillation A circuit can also be configured.

【0017】(実施例3)本発明の第3の実施例として
図示してないが、次のようなものもある。即ち、第1,
第2の実施例では、等価インピーダンス4のリアクタン
ス分が、図3に示すインダクティブとなる範囲を使用し
ていたが、図3に示すキャパシティブとなる範囲を使用
することもできる。
(Third Embodiment) Although not shown as a third embodiment of the present invention, there is the following one. That is, the first
In the second embodiment, the reactance component of the equivalent impedance 4 uses the inductive range shown in FIG. 3, but the capacitive range shown in FIG. 3 may be used.

【0018】具体例として、この場合、等価インピーダ
ンス4を図1のコルピッツ型発振回路の5のC1あるい
は6のC2に置き代えて、また、図2のハートレイ型発
振回路の10のC′に置き代えて使用することになる。
As a concrete example, in this case, the equivalent impedance 4 is replaced with C 1 of 5 or C 2 of 6 of the Colpitts type oscillation circuit of FIG. 1, and C'of 10 of the Hartley type oscillation circuit of FIG. Will be used instead of.

【0019】[0019]

【発明の効果】以上説明した通り、本発明は、新しい機
能として従来の微弱な抵抗変化による信号出力(振幅:
数mV)の代わりに、記録媒体の磁化の向きにより大振
幅の高周波信号(振幅:数V)の発振の有無という大き
な効果(検出感度の向上)が得られる。
As described above, the present invention has a new function of signal output (amplitude:
Instead of several mV), a large effect (improvement in detection sensitivity) of the presence or absence of oscillation of a high-frequency high-frequency signal (amplitude: several V) depending on the magnetization direction of the recording medium is obtained.

【0020】また、性能,効率の向上として、抵抗変化
のみによる熱擾乱ノイズの大きい方式の代わりに、抵抗
変化をリアクタンス変化に変換し、高周波信号の発振の
有無という信号振幅対ノイズの大きな信号検出方式を提
供できる。
Further, in order to improve the performance and efficiency, instead of the method in which the thermal agitation noise is large due to only the resistance change, the resistance change is converted into a reactance change, and a signal detection with a large signal amplitude vs. noise such as the presence or absence of the oscillation of the high frequency signal is detected. A method can be provided.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例のコルピッツ型発振回路
図である。
FIG. 1 is a Colpitts oscillator circuit diagram of a first embodiment of the present invention.

【図2】本発明を実施したハートレイ型発振回路であ
る。
FIG. 2 is a Hartley oscillator circuit embodying the present invention.

【図3】本発明の基本となる磁気抵抗(MR)素子を含
む共振回路の素子の抵抗Rが変化した場合のリアクタン
ス分を表す図である。
FIG. 3 is a diagram showing a reactance component when a resistance R of an element of a resonance circuit including a magnetoresistive (MR) element, which is a basis of the present invention, changes.

【図4】従来のMR素子を用いる信号再生ヘッドの動作
原理を示す図である。
FIG. 4 is a diagram showing an operating principle of a signal reproducing head using a conventional MR element.

【図5】従来のMR素子を感度,直線性を改善して動作
させる方法を示す説明図である。
FIG. 5 is an explanatory diagram showing a method of operating a conventional MR element with improved sensitivity and linearity.

【図6】記録媒体磁化の極性と、図1,図2の回路の発
振状態との関係を示す図である。
FIG. 6 is a diagram showing the relationship between the polarity of the recording medium magnetization and the oscillation state of the circuits of FIGS. 1 and 2.

【符号の説明】[Explanation of symbols]

1 磁気抵抗(MR)素子 2 等価インピーダンスを構成するインダクタンス 3 キャパシタンス 4 等価インピーダンス 5,6 コルピッツ型発振回路を構成するキャパシタン
ス 7 トランジスタ 8 発振出力端子 9,10 それぞれハートレイ型発振回路を構成するイ
ンダクタンス,キャパシタンス 11,12 等価インピーダンスの端子 13 MR素子用の直流電源 14 電流制限抵抗 15,16 リード線 17,18 信号出力端子 19 ディスク,テープなどの媒体の磁気記録層 20 媒体磁化 Hy 媒体磁化による媒体表面の磁界の垂直成分 i 直流電源によりMR素子の中を流れる電流 M HyによりMR素子の磁化が回転する向き θ iとMがなす角 e 17,18間に発生する信号出力 21 磁気記録層上における記録トラック幅 M0 Mの中心値 θ00のなす角で45° +△θ θ0からの増分 −△θ θ0からの減分
1 Magnetoresistive (MR) element 2 Inductance forming equivalent impedance 3 Capacitance 4 Equivalent impedance 5,6 Colpitts type oscillation circuit forming capacitance 7 Transistor 8 Oscillation output terminal 9, 10 Inductance and capacitance forming Hartley type oscillation circuit respectively 11, 12 Equivalent impedance terminal 13 DC power supply for MR element 14 Current limiting resistance 15, 16 Lead wire 17, 18 Signal output terminal 19 Magnetic recording layer of medium such as disk or tape 20 Medium magnetization Hy Medium of medium surface by medium magnetization Vertical component of magnetic field i Direction of rotation of magnetization of MR element by current M Hy flowing in MR element by DC power supply Signal output generated between angle e 17 and 18 formed by θ i and M 21 Recording on magnetic recording layer track width M 0 M Increment from the center value θ 0 M 45 ° + △ θ θ 0 at an angle of 0 - decrement from △ theta theta 0

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 磁気抵抗素子、インダクタンス素子、及
びキャパシタンス素子からなる並列共振回路と、2つの
直列接続したキャパシタンス素子と、を並列に接続した
回路をトランジスタに接続してコルピッツ型発振回路を
構成し、前記磁気抵抗素子の抵抗変化をリアクタンスの
変化に変換して発振条件を制御することにより、記録情
報による前記磁気抵抗素子の抵抗変化を前記コルピッツ
型発振回路の発振出力の有無に変換して前記記録情報を
読み出すことを特徴とする磁気記録再生装置。
1. A Colpitts oscillator circuit is constructed by connecting a parallel resonance circuit composed of a magnetoresistive element, an inductance element, and a capacitance element, and two parallel-connected capacitance elements in parallel to a transistor. By converting the resistance change of the magnetoresistive element into a change of reactance to control the oscillation condition, the resistance change of the magnetoresistive element due to the recorded information is converted into the presence or absence of the oscillation output of the Colpitts type oscillation circuit, A magnetic recording / reproducing apparatus characterized by reading recorded information.
【請求項2】 磁気抵抗素子、インダクタンス素子、及
びキャパシタンス素子からなる並列共振回路と直列に接
続したインダクタンス素子と、キャパシタンス素子と、
を並列に接続した回路をトランジスタに接続してハート
レイ型発振回路を構成し、前記磁気抵抗素子の抵抗変化
をリアクタンスの変化に変換して発振条件を制御するこ
とにより、記録情報による前記磁気抵抗素子の抵抗変化
を前記ハートレイ型発振回路の発振出力の有無に変換し
て前記記録情報を読み出すことを特徴とする磁気記録再
生装置。
2. An inductance element connected in series with a parallel resonance circuit composed of a magnetic resistance element, an inductance element, and a capacitance element, and a capacitance element,
Is connected in parallel to a transistor to form a Hartley oscillation circuit, and the resistance change of the magnetoresistive element is converted into a change in reactance to control the oscillation condition, whereby the magnetoresistive element based on recorded information is controlled. The magnetic recording / reproducing apparatus is characterized in that the recorded information is read by converting the resistance change of the above into the presence or absence of the oscillation output of the Hartley type oscillation circuit.
【請求項3】 磁気抵抗素子、インダクタンス素子、及
びキャパシタンス素子からなる並列共振回路と、キャパ
シタンス素子とを直列に接続した回路を、トランジスタ
に接続してコルピッツ型発振回路を構成し、前記磁気抵
抗素子の抵抗変化をリアクタンスの変化に変換して発振
条件を制御することにより、記録情報による前記磁気抵
抗素子の抵抗変化を前記コルピッツ型発振回路の発振出
力の有無に変換して前記記録情報を読み出すことを特徴
とする磁気記録再生装置。
3. A Colpitts oscillator circuit is formed by connecting a parallel resonance circuit including a magnetoresistive element, an inductance element, and a capacitance element and a capacitance element connected in series to a transistor to form a Colpitts type oscillation circuit. To change the resistance change of the magnetoresistive element due to the recorded information into the presence or absence of the oscillation output of the Colpitts type oscillation circuit to read the recorded information. And a magnetic recording / reproducing apparatus.
【請求項4】 磁気抵抗素子、インダクタンス素子、及
びキャパシタンス素子からなる並列共振回路と、インダ
クタンス素子とを直列に接続した回路を、トランジスタ
に接続してハートレイ型発振回路を構成し、前記磁気抵
抗素子の抵抗変化をリアクタンスの変化に変換して発振
条件を制御することにより、記録情報による前記磁気抵
抗素子の抵抗変化を前記ハートレイ型発振回路の発振出
力の有無に変換して前記記録情報を読み出すこと特徴と
する磁気記録再生装置。
4. A Hartley oscillation circuit is formed by connecting a parallel resonance circuit composed of a magnetic resistance element, an inductance element, and a capacitance element, and a circuit in which an inductance element is connected in series to a transistor to form a Hartley oscillation circuit. To change the resistance change of the magnetoresistive element due to the recorded information to the presence or absence of the oscillation output of the Hartley type oscillation circuit to read the recorded information. Characteristic magnetic recording / reproducing device.
JP5145399A 1993-05-26 1993-05-26 Magnetic recording and reproducing device Pending JPH06338005A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5145399A JPH06338005A (en) 1993-05-26 1993-05-26 Magnetic recording and reproducing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5145399A JPH06338005A (en) 1993-05-26 1993-05-26 Magnetic recording and reproducing device

Publications (1)

Publication Number Publication Date
JPH06338005A true JPH06338005A (en) 1994-12-06

Family

ID=15384363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5145399A Pending JPH06338005A (en) 1993-05-26 1993-05-26 Magnetic recording and reproducing device

Country Status (1)

Country Link
JP (1) JPH06338005A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358455B1 (en) * 1999-03-17 2002-10-25 인터내셔널 비지네스 머신즈 코포레이션 Readback amplifier for wideband readout of magneto-resistive heads for data storage
US6975110B2 (en) 2003-04-23 2005-12-13 Keio University Magnetic sensor utilizing magnetoresistance effect, method for driving magnetic sensor utilizing magnetoresistance effect and magnetic recording systems

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100358455B1 (en) * 1999-03-17 2002-10-25 인터내셔널 비지네스 머신즈 코포레이션 Readback amplifier for wideband readout of magneto-resistive heads for data storage
US6975110B2 (en) 2003-04-23 2005-12-13 Keio University Magnetic sensor utilizing magnetoresistance effect, method for driving magnetic sensor utilizing magnetoresistance effect and magnetic recording systems

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