JP2564262B2 - Magnetoresistive head - Google Patents
Magnetoresistive headInfo
- Publication number
- JP2564262B2 JP2564262B2 JP60036374A JP3637485A JP2564262B2 JP 2564262 B2 JP2564262 B2 JP 2564262B2 JP 60036374 A JP60036374 A JP 60036374A JP 3637485 A JP3637485 A JP 3637485A JP 2564262 B2 JP2564262 B2 JP 2564262B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic shield
- shield
- magnetoresistive
- magnetoresistive head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は磁気記録媒体に書き込まれた情報を磁気抵抗
効果素子により読み出す磁気抵抗効果型ヘッドに係り、
特に安定な再生出力を得るに好適な磁気抵抗効果型磁気
ヘッドの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive head that reads information written on a magnetic recording medium by a magnetoresistive element,
Particularly, the present invention relates to the structure of a magnetoresistive effect magnetic head suitable for obtaining a stable reproduction output.
従来の磁気抵抗効果型磁気ヘッド（以下MRヘッドとい
う）は、特開昭（50−59023号に記載のように磁気抵抗
効果素子（以下MR素子という）の両側に磁気シールドを
対称あるいは非対称に配置する。もしくは特開昭58−62
818号に記載のように磁気シールド膜の膜厚を最短記録
波長程度とするとなっていた。これら従来技術において
は磁気抵抗効果型ヘッドが記録媒体から信号を読み取る
際、MR素子の両側に前記シールドを配置し分解能を高め
るという利点を有している。しかし、前記した公知例の
いづれについても、前記シールドが、磁気抵抗効果型ヘ
ッドとしての再生特性、とりわけ、再生波形の変動に影
響を与えるという問題に関して配慮されていなかった。In a conventional magnetoresistive effect type magnetic head (hereinafter referred to as MR head), magnetic shields are arranged symmetrically or asymmetrically on both sides of a magnetoresistive effect element (hereinafter referred to as MR element) as described in JP-A-50-59023. Alternatively, JP-A-58-62
As described in No. 818, the film thickness of the magnetic shield film has been set to about the shortest recording wavelength. These prior arts have the advantage that when the magnetoresistive head reads a signal from the recording medium, the shields are arranged on both sides of the MR element to improve the resolution. However, in any of the above-mentioned known examples, no consideration has been given to the problem that the shield affects the reproduction characteristics of the magnetoresistive head, especially the fluctuation of the reproduction waveform.
本発明の目的は、再生出力の変動を無くし、ノイズの
小さい磁気抵抗効果型ヘッドを提供することにある。An object of the present invention is to provide a magnetoresistive effect type head that eliminates fluctuations in reproduction output and has low noise.
MR素子の両側に配置されたシールドは、前記した様に
信号を読み取る際の分解能を高めることにあるため、前
記MR素子の極めて近傍に絶縁体を介して配置されてい
る。従がって、MR素子と前記シールドは、磁気的には、
つながっており、シールドに磁壁が発生し、発生した磁
壁移動がMR素子に悪影響を与え、再生出力の変動やノイ
ズを発生させることがわかった。従って本発明の特徴と
するところは前記シールドの平面形状を静磁エネルギー
が小さくなる様にし、シールドの磁壁発生をおさえ、再
生出力の変動やノイズの発生を防止することにある。Since the shields arranged on both sides of the MR element are to enhance the resolution when reading a signal as described above, they are arranged very close to the MR element via an insulator. Therefore, the MR element and the shield are magnetically
It was found that a magnetic domain wall is generated in the shield, and the magnetic domain wall movement that has occurred adversely affects the MR element, causing fluctuations in reproduction output and noise. Therefore, the feature of the present invention is to make the planar shape of the shield small so as to reduce the magnetostatic energy, suppress the generation of the magnetic domain wall of the shield, and prevent the fluctuation of the reproduction output and the generation of noise.
以下、本発明の一実施例を第１図，第２図により説明
する。第１図は本発明の一実施例による磁気抵抗効果型
ヘッドの断面図である。磁気抵抗効果素子１と、該素子
１に電流を流し、再生出力を検出するための引き出し導
体２と、該素子１と引き出し導体２が他と電気的に短絡
しないように絶縁材50及び50′を介し、軟磁性膜の磁気
シールド（例えば膜厚0.1〜５μｍ位のパーマロイ膜
等）３を配置した構造となっている。磁気抵抗効果型ヘ
ッドは素子１にバイアス磁界を印加して使われ、前記し
た両側の磁気シールド３の内側にバイアス磁界印加膜を
配置するが、ここでは、本発明と直接関係しないので省
略している。また、これらの構造は、蒸着・スパッタ，
エッチング等の薄膜形成技術により容易に形成すること
ができる。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a sectional view of a magnetoresistive head according to an embodiment of the present invention. Magnetoresistive element 1, lead conductor 2 for detecting a reproduction output by passing a current through the element 1, and insulating materials 50 and 50 'so that the element 1 and the lead conductor 2 are not electrically short-circuited with each other. A magnetic shield (for example, a permalloy film having a film thickness of about 0.1 to 5 μm) 3 of a soft magnetic film is arranged through the above. The magnetoresistive head is used by applying a bias magnetic field to the element 1, and a bias magnetic field applying film is arranged inside the magnetic shields 3 on both sides, but it is omitted here because it is not directly related to the present invention. There is. In addition, these structures are
It can be easily formed by a thin film forming technique such as etching.
磁気シールド３の役目は、素子１の真下の磁束変化だ
けを感知することを目的とし、該素子１から離れたとこ
ろの磁束変化をしゃ断する役目を持っている。しかし、
実際には磁気シールド３に磁束発生源記録媒体の磁化反
転位置が近づくにつれ、磁気シールドに吸い込まれた磁
束が該素子１と磁気シールド３との磁気抵抗の割合に応
じて、磁気シールド３から漏れて、該素子１に吸い込ま
れ再生出力として検出される。したがって、磁気シール
ド３が該素子１に与える影響の１つは、磁束発生源が該
素子１の真下にないときに該素子１の再生出力変動が磁
気シールド３からの漏れ磁束の急激な増加、あるいは、
急激な減少によって発生することである。The role of the magnetic shield 3 is to sense only the magnetic flux change just below the element 1, and has the role of blocking the magnetic flux change away from the element 1. But,
Actually, as the magnetization reversal position of the magnetic flux generation source recording medium approaches the magnetic shield 3, the magnetic flux absorbed in the magnetic shield leaks from the magnetic shield 3 according to the ratio of the magnetic resistance between the element 1 and the magnetic shield 3. Then, it is sucked into the element 1 and detected as a reproduction output. Therefore, one of the effects of the magnetic shield 3 on the element 1 is that when the magnetic flux generation source is not directly below the element 1, fluctuations in the reproduction output of the element 1 cause a sharp increase in the leakage magnetic flux from the magnetic shield 3, Alternatively,
It is caused by a sharp decrease.
さらに、磁気シールド３が該素子１に与えるもう１つ
の影響として、該素子１の磁壁に悪影響を与えることに
よるバルクハウゼンノイズ等の発生である。バルクハウ
ゼンノイズの発生は、該素子１だけでも発生し、該素子
１の磁壁移動によって発生する。ところが磁気シールド
３を配置することによって発生率が高くなる。該素子１
に比べ体積（面積×厚み）が非常に大きい磁気シールド
の垂直方向の磁気エネルギーは、該素子１の磁壁移動に
影響を与える程の大きなものとなる場合が有る。したが
って該素子１の磁壁の移動により発生するバルクハウゼ
ンノイズは、磁気シールド３からの磁気エネルギーの変
化によって影響を受けている。Further, another effect of the magnetic shield 3 on the element 1 is the generation of Barkhausen noise or the like due to the adverse effect on the domain wall of the element 1. The Barkhausen noise is generated even in the element 1 alone, and is generated by the domain wall movement of the element 1. However, the placement rate of the magnetic shield 3 increases. The element 1
The magnetic energy in the vertical direction of the magnetic shield having a very large volume (area × thickness) in comparison with the above may be large enough to affect the domain wall movement of the element 1. Therefore, Barkhausen noise generated by the movement of the domain wall of the element 1 is affected by the change in the magnetic energy from the magnetic shield 3.
前記記述の磁気シールド３からの磁束の漏れの変化と
前記磁気シールドの垂直方向の磁気エネルギーの変化
は、磁気シールド３の磁区構造とこれによって形成され
る磁壁に非常に大きな関係がある。磁束の漏れの変化に
ついて仮に該素子１の磁気抵抗と磁気シールド３の厚み
を一定とするならば、磁束の漏れの変化は磁気シールド
３の透磁率の変化によるものであり、透磁率は磁壁が増
えると小さくなり磁壁が減ると大きくなるという関係を
示す。The change in the leakage of the magnetic flux from the magnetic shield 3 and the change in the magnetic energy in the perpendicular direction of the magnetic shield 3 described above are very closely related to the magnetic domain structure of the magnetic shield 3 and the domain wall formed thereby. Regarding the change in leakage of magnetic flux If the magnetic resistance of the element 1 and the thickness of the magnetic shield 3 are constant, the change in leakage of magnetic flux is due to the change in magnetic permeability of the magnetic shield 3, and the magnetic permeability depends on the domain wall. It shows the relationship that it increases as the number increases and decreases as the domain wall decreases.
磁気エネルギーの変化は、磁壁が多く発生すると、磁
気シールド３の厚み方向に向く磁区が多くなり、磁気エ
ネルギーが大きくなる。逆に磁壁の発生が少ない場合は
磁気エネルギーは小さくなる。As for the change in magnetic energy, when many domain walls are generated, more magnetic domains are oriented in the thickness direction of the magnetic shield 3, and the magnetic energy is increased. On the contrary, when the number of domain walls is small, the magnetic energy is small.
第１図を用いて説明したような構造の磁気抵抗効果型
ヘッドの平面図を第２図に示す。磁気シールド４のよう
に7,7′の丸みと8,8′の丸みを組み合せたことにより、
磁気シールド４の角部を無くした。これにより角部への
静磁エネルギーの集中がなくなり磁壁の発生が少なくな
る。磁壁の発生を少なくすることにより外部からの磁界
に対しての磁壁の移動が起こりにくくなる。FIG. 2 is a plan view of the magnetoresistive head having the structure described with reference to FIG. By combining the roundness of 7,7 'and the roundness of 8,8' like the magnetic shield 4,
The corners of the magnetic shield 4 have been eliminated. As a result, the magnetostatic energy is not concentrated on the corners and the generation of magnetic domain walls is reduced. By reducing the generation of domain walls, the domain walls are less likely to move with respect to the magnetic field from the outside.
これにより透磁率の変化が少ない安定な磁気シールド
４が得られ、磁気シールド４から漏れて該素子１に吸い
込まれる磁束も安定し、再生出力の変動が少く、さらに
磁気的に連絡されている該素子１の磁壁移動によって発
生するバルクハウゼンノイズの発生が低減される磁気抵
抗効果型ヘッドの形成が可能になる。As a result, a stable magnetic shield 4 with a small change in magnetic permeability can be obtained, the magnetic flux leaking from the magnetic shield 4 and sucked into the element 1 is also stable, the fluctuation of the reproduction output is small, and the magnetic shield is magnetically connected. It is possible to form a magnetoresistive head in which the generation of Barkhausen noise caused by the movement of the domain wall of the element 1 is reduced.
第３図は本発明の第二の実施例を示す平面図である。
第１図を用いて説明したような構造の磁気抵抗効果型ヘ
ッドにおいて、第３図に示す磁気シールド５のように9,
9′の丸みと10の半円を組み合せたことにより、第２図
で説明した効果と同様の効果を得ることができる。FIG. 3 is a plan view showing a second embodiment of the present invention.
In the magnetoresistive head having the structure as described with reference to FIG. 1, the magnetic shield 5 shown in FIG.
By combining the roundness of 9'and the semicircle of 10, it is possible to obtain the same effect as described with reference to FIG.
第４図は本発明の第三の実施例を示す平面図である。
まず磁気シールド６を円形11で形成し、それに磁気抵抗
効果素子１と引き出し導体２を形成し、次に機械加工等
によりＡ−Ａ′まで加工して磁気抵抗効果型ヘッドとす
るものである。この様な平面形状においては12,12′の
部分に磁壁が発生しやすくなるが、円形部11により静磁
エネルギーが小さくされているため第２図で説明したこ
とと同様の効果を得ることが出来る。又第２図，第３図
では、7,7′や9,9′の丸みの部分に磁気抵抗効果素子１
を合せるため高精度の合せ精度、さらには高精度の機械
加工等の加工精度等が必要となるが、第４図の方法によ
り形成すると合せ精度に関係なく良好な効果が得られる
ので素子形成工程の簡略化ができる。FIG. 4 is a plan view showing a third embodiment of the present invention.
First, the magnetic shield 6 is formed in a circular shape 11, the magnetoresistive effect element 1 and the lead conductor 2 are formed on the circular shield 11, and then machined up to AA 'to form a magnetoresistive head. In such a plane shape, magnetic domain walls are easily generated in the 12, 12 'portions, but since the magnetostatic energy is reduced by the circular portion 11, the same effect as described with reference to FIG. 2 can be obtained. I can. Also, in FIGS. 2 and 3, the magnetoresistive effect element 1 is shown in the rounded portions 7, 7'and 9, 9 '.
It is necessary to have a high degree of precision in aligning, and further, a high degree of precision in machining such as machining. However, if the method shown in FIG. 4 is used, good effects can be obtained regardless of the precision of alignment. Can be simplified.
第５図,6図は本発明の第四の実施例を示す。第５図
は、第１図と同様バイアス磁界印加膜を省略した磁気抵
抗効果型ヘッドの断面図である。磁気抵抗効果素子21
と、該素子21に電流を流し再生出力を検出するための引
き出し導体22と、該素子21と引き出し導体22が他と電気
的に短絡しないように絶縁材50及び51′を介し、片側を
軟磁性フェライトの磁気シールド（例えば、MnOFe2O3,N
iOFe2O3,MnZn2Fe2O4,NiZn2Fe2O4）20,他側を蒸着，スパ
ッタ，エッチング等により形成した軟磁性膜の磁気シー
ルド（例えば、0.1〜５μｍの厚さのパーマロイ膜等）2
3を配置した構造となっている。5 and 6 show a fourth embodiment of the present invention. FIG. 5 is a sectional view of the magnetoresistive head in which the bias magnetic field applying film is omitted as in FIG. Magnetoresistive element 21
A lead conductor 22 for passing a current through the element 21 to detect a reproduction output, and an insulating material 50 and 51 'to prevent the element 21 and the lead conductor 22 from being electrically short-circuited with the other, and soften one side. Magnetic shield of magnetic ferrite (eg MnOFe 2 O 3 , N
iOFe 2 O 3, MnZn2Fe 2 O 4, NiZn2Fe 2 O 4) 20, deposited the other side, sputtering, magnetic shielding of the soft magnetic film formed by etching or the like (e.g., permalloy film having a thickness of 0.1~5μm, etc.) 2
It has a structure where 3 are arranged.
第６図は、第５図で示した構造の平面図であり、磁気
シールド23の平面形状は第２図〜第４図で示した形状と
なっている。FIG. 6 is a plan view of the structure shown in FIG. 5, and the plane shape of the magnetic shield 23 is the shape shown in FIGS. 2 to 4.
かかる構造において、磁気シールド23の前記素子１へ
の影響は前記記述のごとくである。一方軟磁性フェライ
トは、磁気異方性を持たず磁区構造も不規則となってい
るため、静磁エネルギーの集中が起こらず軟磁性フェラ
イトからなる磁気シールド20を通過し、前記素子21に流
れる磁束は急激な変化が起こらない。In such a structure, the influence of the magnetic shield 23 on the element 1 is as described above. On the other hand, since the soft magnetic ferrite has no magnetic anisotropy and the magnetic domain structure is irregular, the magnetic flux that passes through the magnetic shield 20 made of soft magnetic ferrite without concentration of magnetostatic energy and flows to the element 21. Does not change rapidly.
また、前記理由よい磁気シールド20の平面形状はどの
ような形状としてもさしつかえなく、磁気シールド20を
磁気抵抗効果型ヘッド素子形成用基体とし用いることも
できる。Further, the plane shape of the magnetic shield 20 may be any shape for the above reason, and the magnetic shield 20 may be used as a magnetoresistive head element forming substrate.
この事により、磁気シールド23及び磁気シールド20の
素子１への影響をなくし、磁気抵抗効果型ヘッドの再生
出力及び再生波形の急激な変化やノイズ発生を防止する
事が可能となり、良好な特性を有する磁気抵抗効果型ヘ
ッドを得ることが出来る。As a result, it is possible to eliminate the influence of the magnetic shield 23 and the magnetic shield 20 on the element 1 and prevent abrupt changes in the reproduction output and reproduction waveform of the magnetoresistive head and noise generation, and to obtain good characteristics. It is possible to obtain the magnetoresistive head.
また、磁気抵抗効果型ヘッドの素子形成工程におい
て、素子形成基体として磁気シールド20の兼用する場
合、必然的に磁気シールド20は磁気シールド23の平面形
状より大きくなり、磁気シールド（素子形成用基体）20
に対する素子1,導体22,磁気シールド23の相対位置に対
する位置合せを考慮しなくて良くなり、製造しやすい構
造となる。Further, in the element forming process of the magnetoresistive head, when the magnetic shield 20 is also used as the element forming base, the magnetic shield 20 is necessarily larger than the planar shape of the magnetic shield 23, and the magnetic shield (element forming base) is formed. 20
It is not necessary to consider the alignment of the element 1, the conductor 22, and the magnetic shield 23 with respect to the relative position, and the structure is easy to manufacture.
磁気シールド型磁気抵抗ヘッドの磁気シールドを丸み
を持った平面形状とすることを特徴とする本発明によれ
ば、磁気シールドを単磁区となりやすい形状とすること
により磁壁の移動が無くなり透磁率の変化がなくなり安
定なシールド効果が得られ、同時に再生出力の変動もな
くなり安定な特性が得られ信頼性の高い読み取りヘッド
を提供する事が出来る。According to the present invention, which is characterized in that the magnetic shield of the magnetic shield type magnetoresistive head has a rounded planar shape, the magnetic shield has a shape that is likely to be a single magnetic domain, thereby eliminating the movement of the domain wall and changing the permeability. It is possible to provide a highly reliable read head in which a stable shield effect is obtained, and at the same time, fluctuations in reproduction output are eliminated and stable characteristics are obtained.
第１図は本発明の一実施例に係る磁気抵抗効果型ヘッド
の断面図、第２図は第１図に示された磁気抵抗効果型ヘ
ッドの平面図、第３図は本発明の第二の実施例の平面
図、第４図は本発明の第三の実施例の平面図、第５図は
本発明の第四の実施例を示す磁気抵抗効果型ヘッドの断
面図、第６図は第５図の平面図である。 1,21……磁気抵抗効果素子、 2,22……引き出し導体、 3,4,5,6,20,23……磁気シールド、 7,7′,9,9′10,11,24,24′,25,25′……磁気シールド丸
み部、 12,12′……磁気シールド角形部、 50,50′……絶縁材。1 is a sectional view of a magnetoresistive head according to an embodiment of the present invention, FIG. 2 is a plan view of the magnetoresistive head shown in FIG. 1, and FIG. 3 is a second view of the present invention. FIG. 4 is a plan view of a third embodiment of the present invention, FIG. 5 is a sectional view of a magnetoresistive head showing a fourth embodiment of the present invention, and FIG. It is a top view of FIG. 1,21 …… Magnetoresistive element, 2,22 …… Lead-out conductor, 3,4,5,6,20,23 …… Magnetic shield, 7,7 ′, 9,9′10,11,24,24 ′, 25,25 ′ …… Magnetic shield rounded part, 12,12 ′ …… Magnetic shield square part, 50,50 ′ …… Insulation material.
Claims (1)
出し導体と、前記磁気抵抗効果素子の両側に絶縁体を介
して配置された軟磁性の磁気シールドを有する磁気抵抗
効果型ヘッドにおいて、前記磁気シールドの少なくとも
片側の磁気シールドの平面形状を、直線と少なくとも一
種類以上の任意の半径を有する曲線との組合せ、あるい
は少なくとも二種類以上の任意の半径を有する曲線同志
の組合せで構成し、且つ、前記曲線の曲率中心が前記磁
気シールドの面内にある様に実質的に凸状形状をなして
構成したことを特徴とする磁気抵抗効果型磁気ヘッド。1. A magnetoresistive head having a magnetoresistive effect element, a resistance change detecting lead conductor, and a soft magnetic shield arranged on both sides of the magnetoresistive effect element with an insulator interposed therebetween. The planar shape of the magnetic shield on at least one side of the magnetic shield is constituted by a combination of a straight line and a curve having at least one kind of arbitrary radius, or a combination of curves having at least two kinds of arbitrary radii, and A magnetoresistive effect magnetic head having a substantially convex shape so that the center of curvature of the curve lies within the surface of the magnetic shield.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60036374A JP2564262B2 (en) | 1985-02-27 | 1985-02-27 | Magnetoresistive head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60036374A JP2564262B2 (en) | 1985-02-27 | 1985-02-27 | Magnetoresistive head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61196419A JPS61196419A (en) | 1986-08-30 |
| JP2564262B2 true JP2564262B2 (en) | 1996-12-18 |
Family
ID=12468062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60036374A Expired - Lifetime JP2564262B2 (en) | 1985-02-27 | 1985-02-27 | Magnetoresistive head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2564262B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100525569B1 (en) * | 2000-07-13 | 2005-11-03 | 시게이트 테크놀로지 엘엘씨 | Domain control in shields of a magnetic transducer |
| JP6605570B2 (en) * | 2017-12-27 | 2019-11-13 | Ｔｄｋ株式会社 | Magnetic sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4555740A (en) * | 1983-04-04 | 1985-11-26 | Hewlett-Packard Company | Thin film transducer head for inductive recording and magnetoresistive reading |
-
1985
- 1985-02-27 JP JP60036374A patent/JP2564262B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61196419A (en) | 1986-08-30 |
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