JPS61196419A - Magneto-resistance effect type head - Google Patents

Magneto-resistance effect type head

Info

Publication number
JPS61196419A
JPS61196419A JP3637485A JP3637485A JPS61196419A JP S61196419 A JPS61196419 A JP S61196419A JP 3637485 A JP3637485 A JP 3637485A JP 3637485 A JP3637485 A JP 3637485A JP S61196419 A JPS61196419 A JP S61196419A
Authority
JP
Japan
Prior art keywords
magnetic
magnetic shield
shield
walls
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3637485A
Other languages
Japanese (ja)
Other versions
JP2564262B2 (en
Inventor
Toru Takeura
竹浦　亨
Hideo Tanabe
英男 田辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60036374A priority Critical patent/JP2564262B2/en
Publication of JPS61196419A publication Critical patent/JPS61196419A/en
Application granted granted Critical
Publication of JP2564262B2 publication Critical patent/JP2564262B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE:To obtain stable characteristics by making the magnetic shield of a magnetic shield type magneto-resistance head to a rounded plane shape. CONSTITUTION:As corner parts of a magnetic shield 4 are eliminated by combining rounded parts 7, 7' and rounded parts 8, 8' as shown in the figure of the magnetic shield 4, the concentration of magnetostatic energy of corner parts is eliminated and the generation of magnetic walls is reduced. By reducing the generation of magnetic walls, moving of magnetic walls to a magnetic field from the outside becomes hard to occur. Thus, a stable magnetic shield 4 small in change of magnetic permeability can be obtained, and a magnetic flux leaked from the magnetic shield 4 and adsorbed in an element 1 becomes stable. The fluctuation of reproducing outputs is small, and the generation of Barkhausen noise generated by moving of magnetic walls of the magnetically connected element 1.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は磁気記録媒体に誓き込まれた情報を磁気抵抗効
果素子により読み出す磁気抵抗効果型ヘッドに係り、特
に安定な再生出力を得るに好適な磁気抵抗効果型磁気ヘ
ッドの構造に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a magnetoresistive head that reads information stored in a magnetic recording medium using a magnetoresistive element, and is particularly suitable for obtaining stable reproduction output. The present invention relates to the structure of a magnetoresistive magnetic head.

〔発明の背景〕[Background of the invention]

従来の磁気抵抗効果型磁気ヘッド（以下ＭＲヘッドとい
う）は、特開昭５０−５９０２５号に記載のように磁気
抵抗効果素子（以下ＭＲ素子という）の両側に磁気シー
ルドを対称あるいは非対称に配置する。もしくは特開昭
５８−６２８１８号に記載のように磁気シールド膜の膜
厚を最短記録波長程度とするとなっていた。これら従来
技術においては磁気抵抗効果型ヘッドが記録媒体から信
号を読み取る際、ＭＲ素子の両側に前記シールドを配置
し分解能を高めるという利点を有している。しかし、前
記した公知例のいづれについても、前記シールドが、磁
気抵抗効果製ヘッドとしての再生特性、とりわけ、再生
波形の変動に影響を与えるという問題に関して配慮され
ていなかった。A conventional magnetoresistive magnetic head (hereinafter referred to as MR head) has magnetic shields arranged symmetrically or asymmetrically on both sides of a magnetoresistive element (hereinafter referred to as MR element) as described in Japanese Patent Laid-Open No. 50-59025. . Alternatively, as described in Japanese Patent Application Laid-Open No. 58-62818, the thickness of the magnetic shielding film was set to be approximately the same as the shortest recording wavelength. These conventional techniques have the advantage that when a magnetoresistive head reads signals from a recording medium, the shields are placed on both sides of the MR element to improve resolution. However, in none of the above-mentioned known examples, consideration was not given to the problem that the shield affects the reproduction characteristics of the magnetoresistive head, particularly the fluctuation of the reproduction waveform.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、再生出力の変動を無くし、ノイズの小
さい磁気抵抗効果型ヘッドを提供することにある。An object of the present invention is to provide a magnetoresistive head that eliminates fluctuations in reproduction output and has low noise.

（発明の概要」 ＭＲ素子の両側に配置されたシールドは、前記した様に
信号を読み取る際の分解能を高めることにあるため、前
記ＭＲ素子の極めて近傍に？３縁体を弁して配置されて
いる。従がって、ＭＲ素子と前記シールドは、磁気的に
は、つながってυす、シールドに磁壁が発生し、発生し
た磁壁移動がＭＲ素子に悪影響を与え、再生出力の変動
やノイズを発生させることがわかったっ従って本発明の
％徴とするところは前記シールドの平面形状な静磁エネ
ルギーが小さくなる様にし、シールドの磁壁発生をおさ
え、再生出力の変動やノイズの発生を防止すること着こ
める。(Summary of the Invention) The purpose of the shields placed on both sides of the MR element is to increase the resolution when reading signals as described above, so the shields are placed very close to the MR element with three edges. Therefore, the MR element and the shield are magnetically connected and a domain wall is generated in the shield, and the generated domain wall movement adversely affects the MR element, causing fluctuations in reproduction output and noise. Therefore, the feature of the present invention is to reduce the static magnetic energy of the planar shape of the shield, suppress the generation of domain walls of the shield, and prevent fluctuations in reproduction output and generation of noise. I can wear it.

（＠明の実施例」 以下、本発明の一実施例を第１図、第２図により説明す
る。第１図は本発明の一実施例による磁気抵抗効果型ヘ
ッドの断面図でるる。磁気抵抗効果索子１と、該素子１
に電流を流し、再生出力を検出するための引き出し導体
２と、該素子１と引き出し導体２が他と電気的に短絡し
ないように絶縁材５０及び５０′を介し、軟磁性膜の磁
気シールド（例えば膜厚０．１〜５μｍ位のツクーマロ
イ膜等）５を配置した構造となっている。(@Akira's Embodiment) Hereinafter, an embodiment of the present invention will be explained with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional view of a magnetoresistive head according to an embodiment of the present invention.Magnetic Resistance effect cable 1 and the element 1
A lead-out conductor 2 is used to apply current to the lead-out conductor 2 for detecting the playback output, and a soft magnetic film magnetic shield ( For example, it has a structure in which a Tsukuumalloy film (such as a Tsukuumalloy film with a film thickness of about 0.1 to 5 μm) is disposed.

磁気抵抗効果型ヘッドは素子１にノ（イアス磁界を印加
して使われ、前記した両側の磁気シールド６の内側（こ
バイアス磁界印加膜な配置するが、　　　　′ここでは
、本発明と直接関係しないので省略している。また、こ
れらの構造は、蒸着・スノくツタ９エツチング等の薄膜
形成技術により容易に形成することができる。The magnetoresistive head is used by applying a bias magnetic field to the element 1, and the bias magnetic field application film is placed inside the magnetic shields 6 on both sides described above, but this is not directly related to the present invention. Furthermore, these structures can be easily formed using thin film forming techniques such as vapor deposition and burlap etching.

磁気シールド６の役目は、素子１の真下の磁束変化だけ
を感知することを目的とし、該素子１から離れたところ
の磁束変化をしゃ断する役目ン持っている。しかし、実
際には磁気シールド３に磁束発生源記録媒体の磁化反転
位置が近づくにつれ、磁気シールドに吸い込まれた磁束
が該素子１と磁気７−ルド３との磁気抵抗の割合に応じ
て、磁気シールド３から漏れて、該素子１に吸い込まれ
再生出力として検出される。The role of the magnetic shield 6 is to sense only changes in the magnetic flux directly below the element 1, and has the role of blocking changes in the magnetic flux away from the element 1. However, in reality, as the magnetization reversal position of the magnetic flux source recording medium approaches the magnetic shield 3, the magnetic flux absorbed into the magnetic shield becomes It leaks from the shield 3, is sucked into the element 1, and is detected as a reproduced output.

したがって、磁気シールド５が該索子１に与える影響の
１つは、磁束発生源が該索子１の真Ｆにないときに該索
子１の再生出力変動が磁気シールド３からの漏れ磁束の
急激な増加、ろるいは、急激な減少ｔこよって発生する
ことである。Therefore, one of the effects that the magnetic shield 5 has on the cord 1 is that when the magnetic flux generation source is not at the true F of the cord 1, fluctuations in the reproduction output of the cord 1 are caused by leakage magnetic flux from the magnetic shield 3. A sudden increase or slowness occurs due to a sudden decrease.

さらに、磁気シールド３が該索子１に与えるもう１つの
影響として、該索子１の磁壁に悪影響を与えることによ
るパルクツ１ウゼンノイズ等の発生である。パルクツ１
ウゼンノイズの発生は、該素子１だけでも発生し、該索
子１の磁壁移動によって発生する。ところが磁気シール
ド３を配置することによって発生率が高くなる。該素子
１に比べ体積（面積×厚み）が非常に大きい磁気シール
ドの垂直方向の磁気エネルギーは、該素子１の磁壁移動
に影響を与える程の大きなものとなる場合が有る。した
がって該索子１の磁壁の移動により発生するパルクツ１
ウゼンノイズは、磁気シールド６からの磁気エネルギー
の変化によって影響を受けている。Furthermore, another influence that the magnetic shield 3 has on the cable 1 is the generation of noise such as noise due to an adverse effect on the domain wall of the cable 1. Parktsu 1
The noise is generated by the element 1 alone, and is caused by the movement of the domain wall of the cable 1. However, by arranging the magnetic shield 3, the occurrence rate increases. The magnetic energy in the perpendicular direction of the magnetic shield, which has a much larger volume (area x thickness) than the element 1, may be so large as to affect the domain wall movement of the element 1. Therefore, the pulses 1 generated due to the movement of the domain wall of the cord 1
Uzen noise is affected by changes in magnetic energy from the magnetic shield 6.

前記記述の磁気シールド３からの磁束の漏れの変化と前
記磁気シールドの垂直方向の磁気エネルギーの変化は、
磁気シールド３の磁区構造とこれによって形成される磁
壁に非常に大きな関係がおる。磁束の漏れの変化につい
て仮に該索子１の磁気抵抗と磁気シールド３の厚みを一
定とするならば、磁束の漏れの変化は磁気シールド３の
透磁率の変化によるものでるり、透磁率は磁壁が増える
と小さくなり磁壁が減ると大きくなるという関係を示す
。The change in magnetic flux leakage from the magnetic shield 3 and the change in magnetic energy in the vertical direction of the magnetic shield described above are as follows:
There is a very large relationship between the magnetic domain structure of the magnetic shield 3 and the domain wall formed thereby. Regarding changes in magnetic flux leakage, if the magnetic resistance of the cord 1 and the thickness of the magnetic shield 3 are constant, the change in magnetic flux leakage is due to a change in the magnetic permeability of the magnetic shield 3, and the magnetic permeability is the same as the domain wall. It shows the relationship that as the domain wall increases, it becomes smaller and as the domain wall decreases, it becomes larger.

磁気エネルギーの変化は、磁壁が多く発生すると、磁気
シールド３の厚み方向に同〈磁区が多くなり、磁気エネ
ルキーが大きくなる。逆に磁壁の発生が少ない場合は磁
気エネルギーは小さくなる。As for changes in magnetic energy, when more domain walls are generated, there are more domains in the thickness direction of the magnetic shield 3, and the magnetic energy key becomes larger. Conversely, when fewer domain walls occur, the magnetic energy becomes smaller.

第１図を用いて説明したような構造の磁気抵抗効果型ヘ
ッドの平面図を第２図に示す。磁気シールド４のように
７，７′の丸みと８，８′の丸みを組み合せたことによ
り、磁気シールド４０角部を無くした。これにより角部
への静磁エネルギーの集中がなくなり磁壁の発生が少な
くなる。FIG. 2 shows a plan view of a magnetoresistive head having the structure described with reference to FIG. By combining the roundness at 7, 7' and the radius at 8, 8' like the magnetic shield 4, the magnetic shield 40 eliminates the corner portion. This eliminates the concentration of magnetostatic energy at the corners and reduces the occurrence of domain walls.

磁壁の発生を少なくすることにより外部からの磁界に対
しての磁壁の移動が起こりにくくなる。By reducing the occurrence of domain walls, movement of domain walls in response to external magnetic fields becomes less likely to occur.

これにより透磁率の変化か少ない安定な磁気シールド４
が得られ、磁気シールド４から漏れて該素子１に吸い込
まれる磁束も安定し、再生出力の変動が少く、さらに磁
気的に連絡されている該索子１の磁壁移動によって発生
するバルクハウゼンノイズの発生が低減される磁気抵抗
効果型ヘッドの形成が可能になる。This results in a stable magnetic shield with little change in magnetic permeability 4
is obtained, the magnetic flux leaking from the magnetic shield 4 and sucked into the element 1 is also stabilized, there is little fluctuation in the reproduction output, and furthermore, Barkhausen noise generated by the domain wall movement of the magnetically connected cord 1 is reduced. It becomes possible to form a magnetoresistive head in which generation is reduced.

第３図は本発明の第二の実施例を示す平面図である。第
１図を用いて説明したような構造の磁気抵抗効果型ヘッ
ドにおいて、第３図に示す磁気シールド５のよう壷こ９
．９′の丸みと１０の半円を組み合せたことにより、第
２図で説明した効果と同様の効果を得ることかできる。FIG. 3 is a plan view showing a second embodiment of the present invention. In the magnetoresistive head having the structure explained using FIG. 1, a pot 9 like the magnetic shield 5 shown in FIG.
．． By combining the roundness of 9' and the semicircle of 10, an effect similar to that explained in FIG. 2 can be obtained.

第４図は本発明の第三の実施例を示す平面図でるる。ま
ず磁気シールド６を円形１１で形成し、それに磁気抵抗
効果素子１と引き出し導体２を形成し、次に機械加工等
によりＡ−Ａ’まで加工して磁気抵抗効果型ヘッドとす
るものでるる。この様な平面形状においては１２．１２
’の部分に磁壁が発生しやすくなるが、円形部１１によ
り静磁エネルギーが小さくされているため第２図で説明
　　゛したことと同様の効果を得ることが出来る。又第
２図、第５図では、７．７’や９，９′の丸みの部分に
磁気抵抗効果素子１を合せるため高精度の合せ精度、さ
らには高精度の機械加工等の加工精度等が必要となるか
、第４図の方法により形成すると合せ精度に関係なく艮
好な効果が得られるので素子形成工程の簡略化ができる
。FIG. 4 is a plan view showing a third embodiment of the present invention. First, the magnetic shield 6 is formed into a circular shape 11, the magnetoresistive element 1 and the lead conductor 2 are formed thereon, and then the magnetic shield 6 is machined up to A-A' to form a magnetoresistive head. In such a planar shape, 12.12
Although domain walls are more likely to occur in the portion ', since the static magnetic energy is reduced by the circular portion 11, the same effect as explained in FIG. 2 can be obtained. In addition, in FIGS. 2 and 5, in order to align the magnetoresistive element 1 with the rounded portions of 7.7' and 9,9', high alignment accuracy and high precision machining etc. are required. However, if formed by the method shown in FIG. 4, a good effect can be obtained regardless of the alignment accuracy, and the element forming process can be simplified.

第５図、６図は本発明の第四の実施例を示す。5 and 6 show a fourth embodiment of the present invention.

第５図は、第１図と同様バイアス磁界印加膜を省略した
磁気抵抗効果型ヘッドの断面図である。FIG. 5 is a cross-sectional view of a magnetoresistive head in which the bias magnetic field applying film is omitted as in FIG. 1.

磁気抵抗効果素子２１と、該素子２１に電流を流し再生
出力を検出するための引き出し導体２２と、該素子２１
と引き出し導体２２が他と電気的に短絡しないように絶
縁材５ｏ及び５１′を介し、片側を軟磁性フェライトの
磁気シールド（例えば、Ｍｎ０Ｆｅ＊Ｏａ　、　Ｎｉ０
Ｆｅ＊Ｏｓ　、　ＭｎＺｎ２Ｆｅ諺Ｏａ　、　ＮｉＺｎ
２ＦｅｔＯＪ２０、他側を蒸層、スパッタ、エツチング
等により形成した軟磁性膜の磁気シールド（例えば、０
．１〜５μｍの厚さのパーマロイ膜等）２５を配置した
構造となっている。A magnetoresistive element 21, a lead-out conductor 22 for passing current through the element 21 and detecting a reproduced output, and the element 21.
In order to prevent the lead-out conductor 22 from being electrically short-circuited with other parts, one side is covered with a magnetic shield of soft magnetic ferrite (for example, Mn0Fe*Oa, Ni0
Fe*Os, MnZn2FeOa, NiZn
2FetOJ20, and the other side is a magnetic shield of a soft magnetic film formed by vapor layering, sputtering, etching, etc. (for example, 0
．． It has a structure in which a permalloy film, etc.) 25 with a thickness of 1 to 5 μm is arranged.

第６図は、第５図で示した構造の平面図であり、磁気シ
ールド２３の平面形状は第２図〜第４図で示した形状と
なっている。FIG. 6 is a plan view of the structure shown in FIG. 5, and the planar shape of the magnetic shield 23 is the shape shown in FIGS. 2 to 4.

かかる構造において、磁気シールド２３の前記素子１へ
の影響は前記記述のごとくである。一方軟磁性フエライ
トは、磁気異方性を持たす磁区構造も不規則となってい
るため、静磁エネルギーの集中が起こらず軟磁性フェラ
イトからなる磁気シールド２０を通過し、前記索子２１
に流れる磁束は急激な変化が起こらない。In such a structure, the influence of the magnetic shield 23 on the element 1 is as described above. On the other hand, since soft magnetic ferrite has an irregular magnetic domain structure with magnetic anisotropy, the static magnetic energy does not concentrate and passes through the magnetic shield 20 made of soft magnetic ferrite.
There are no sudden changes in the magnetic flux flowing through the area.

また、前記理由より磁気シールド２０の平面形状はどの
ような形状としてもさしつかえなく、磁気シールド２０
を磁気抵抗効果型ヘッド素子形成用基体とし用いること
もできる。Further, for the above-mentioned reasons, the planar shape of the magnetic shield 20 may be any shape;
It can also be used as a substrate for forming a magnetoresistive head element.

この事により、磁気シールド２３及び磁気シールド２０
の索子１への影響をなくシ、磁気抵抗効果型ヘッドの再
生出力及び再生波形の急激な変化やノイズ発生を防止す
る事が可能となり、良好な特性を有する磁気抵抗効果型
ヘッドを得ることが出来る。Due to this, the magnetic shield 23 and the magnetic shield 20
To obtain a magnetoresistive head having good characteristics by eliminating the influence on the cable 1, making it possible to prevent rapid changes in the reproduction output and reproduction waveform of the magnetoresistive head, and preventing noise generation. I can do it.

また、磁気抵抗効果型ヘッドの索子形成工程において、
素子形成基体として磁気シールド２０を兼用する場合、
必然的に磁気シールド２０は磁気シールド２３の平面形
状より大きくなり、磁気シールド（素子形成用基体）２
０に対する索子１゜導体２２．磁気シールド２３の相対
位置に対する位置合せを考慮しなくて良くなり、製造し
やすい構造となる。In addition, in the process of forming a cord of a magnetoresistive head,
When the magnetic shield 20 is also used as the element formation substrate,
The magnetic shield 20 is inevitably larger than the planar shape of the magnetic shield 23, and the magnetic shield (substrate for element formation) 2
0 to 1° conductor 22. There is no need to consider alignment with respect to the relative position of the magnetic shield 23, resulting in a structure that is easy to manufacture.

〔発明の効果〕〔Effect of the invention〕

磁気シールド型凪気抵抗ヘッドの磁気シールドを丸みを
持った平面形状とすることを特徴とする本発明によれば
、磁気シールドを単磁区となりやすい形状とすることに
より磁壁の移動が無くなり透磁率の変化がなくなり安定
なシールド効果が得られ、同時に再生出刃の変動もなく
なり安定な特性が得られ信頼性の尚い読み取りヘッドを
提供する事が出来る０According to the present invention, which is characterized in that the magnetic shield of the magnetically shielded calm resistance head has a rounded planar shape, by making the magnetic shield a shape that tends to form a single magnetic domain, movement of the domain wall is eliminated and the magnetic permeability is reduced. There is no change and a stable shielding effect is obtained, and at the same time there is no fluctuation in the regenerated cutting edge and stable characteristics are obtained, making it possible to provide a highly reliable reading head.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例に係る磁気抵抗効果型ヘッド
の断面図、第２図は第１図に示された磁気抵抗効果型ヘ
ッドの平面図、第３図は本発明の第二の実施例の平面図
、第４図は本発明の第三の実施例の平面図、第５図は本
発明の第四の実施例を示す磁気抵抗効果型ヘッドの断面
図、第６図は第５図の平面図でるる。 １．２１・・・磁気抵抗効果素子、 ２．２２・・・引き出し導体、 ３　、４　、５　、６　、２０．２５・・・磁気シール
ド、７．７’、９．９’、１０，１１．２４，２４’、
２５，２５’・・・磁気シールド丸み部、１２．１２’
・・・磁気シールド角形部、５０　、５０’・・・絶縁
材。 ゛・ニーFIG. 1 is a sectional view of a magnetoresistive head according to an embodiment of the present invention, FIG. 2 is a plan view of the magnetoresistive head shown in FIG. 1, and FIG. 4 is a plan view of a third embodiment of the present invention, FIG. 5 is a sectional view of a magnetoresistive head showing a fourth embodiment of the present invention, and FIG. 6 is a plan view of a third embodiment of the present invention. The plan view of Figure 5 is Ruru. 1.21... Magnetoresistive element, 2.22... Output conductor, 3, 4, 5, 6, 20.25... Magnetic shield, 7.7', 9.9', 10, 11 .24,24',
25, 25'...magnetic shield rounded part, 12.12'
... Magnetic shield square part, 50, 50'... Insulating material.゛・nee

Claims (1)

【特許請求の範囲】[Claims] １、磁気抵抗効果素子と、抵抗変化検出用引き出し導体
と、前記磁気抵抗効果素子の両側に絶縁体を介して配置
された軟磁性の磁気シールドとより成る磁気抵抗効果型
ヘッドにおいて、前記磁気シールドの少なくとも片側の
磁気シールドの平面形状を、直線と少なくとも一種類以
上の任意の半径を有する曲線との組み合せ、あるいは少
なくとも二種類以上の任意の半径を有する曲線同志の組
み合せで構成することを特徴とする磁気抵抗効果型ヘッ
ド。1. In a magnetoresistive head comprising a magnetoresistive element, a lead-out conductor for resistance change detection, and a soft magnetic magnetic shield placed on both sides of the magnetoresistive element with an insulator in between, the magnetic shield The planar shape of the magnetic shield on at least one side of the magnetic shield is composed of a combination of a straight line and a curved line having at least one type of arbitrary radius, or a combination of curved lines having at least two or more types of arbitrary radius. Magnetoresistive head.
JP60036374A 1985-02-27 1985-02-27 Magnetoresistive head Expired - Lifetime JP2564262B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60036374A JP2564262B2 (en) 1985-02-27 1985-02-27 Magnetoresistive head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60036374A JP2564262B2 (en) 1985-02-27 1985-02-27 Magnetoresistive head

Publications (2)

Publication Number Publication Date
JPS61196419A true JPS61196419A (en) 1986-08-30
JP2564262B2 JP2564262B2 (en) 1996-12-18

Family

ID=12468062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60036374A Expired - Lifetime JP2564262B2 (en) 1985-02-27 1985-02-27 Magnetoresistive head

Country Status (1)

Country Link
JP (1) JP2564262B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002007153A3 (en) * 2000-07-13 2002-11-07 Seagate Technology Llc Domain control in shields of a magnetic transducer
JP2019117086A (en) * 2017-12-27 2019-07-18 Tdk株式会社 Magnetic sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193518A (en) * 1983-04-04 1984-11-02 Yokogawa Hewlett Packard Ltd Write/read transducer head

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193518A (en) * 1983-04-04 1984-11-02 Yokogawa Hewlett Packard Ltd Write/read transducer head

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002007153A3 (en) * 2000-07-13 2002-11-07 Seagate Technology Llc Domain control in shields of a magnetic transducer
GB2380052A (en) * 2000-07-13 2003-03-26 Seagate Technology Llc Domain control in shields of a magnetic transducer
US6710982B2 (en) 2000-07-13 2004-03-23 Seagate Technology Llc Domain control in shields of a magnetic transducer
GB2380052B (en) * 2000-07-13 2004-07-28 Seagate Technology Llc Domain control in shields of a magnetic transducer
JP2019117086A (en) * 2017-12-27 2019-07-18 Tdk株式会社 Magnetic sensor
US11366183B2 (en) 2017-12-27 2022-06-21 Tdk Corporation Magnetic sensor with a chamfered magnetic body facing a magnetoresistive element

Also Published As

Publication number Publication date
JP2564262B2 (en) 1996-12-18

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