JPH06331975A - Color liquid crystal display - Google Patents
Color liquid crystal displayInfo
- Publication number
- JPH06331975A JPH06331975A JP5142524A JP14252493A JPH06331975A JP H06331975 A JPH06331975 A JP H06331975A JP 5142524 A JP5142524 A JP 5142524A JP 14252493 A JP14252493 A JP 14252493A JP H06331975 A JPH06331975 A JP H06331975A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- light
- crystal display
- colored layers
- color
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、カラー液晶ディスプレ
イに関し、特に対向する２枚の透明基板の一方に、スイ
ッチング素子をアレイ状に配置したアクティブマトリク
スカラー液晶ディスプレイに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color liquid crystal display, and more particularly to an active matrix color liquid crystal display having switching elements arranged in an array on one of two transparent substrates facing each other.
【０００２】[0002]
【従来の技術】従来の液晶ディスプレイ（以下ＬＣＤと
略す）、特にアクティブマトリクスＬＣＤ（以下ＡＭ−
ＬＣＤと略す）では図５に見られるように、信号線５１
と走査線５２の交点に、各単位画素５３に対応するスイ
ッチング素子５４を、アレイ状に配置する構造を有す
る。スイッチング素子５４は、各単位画素５３を個々独
立にＯＮ／ＯＦＦさせる機能を有し、従来のＡＭ−ＬＣ
Ｄでは薄膜トランジスタ（以下ＴＦＴと略す）や、Meta
l-Insulator-Metal ダイオード（以下ＭＩＭダイオード
と略す）等がスイッチング素子として利用されている。2. Description of the Related Art Conventional liquid crystal displays (hereinafter abbreviated as LCD), particularly active matrix LCDs (hereinafter AM-).
In LCD), as shown in FIG.
The switching element 54 corresponding to each unit pixel 53 is arranged in an array at the intersection of the scanning line 52 and the scanning line 52. The switching element 54 has a function of individually turning ON / OFF each unit pixel 53, and has a conventional AM-LC.
In D, a thin film transistor (hereinafter abbreviated as TFT) or Meta
An l-insulator-metal diode (hereinafter abbreviated as MIM diode) or the like is used as a switching element.
【０００３】図６及び図７を用いてＴＦＴを利用したカ
ラーＡＭ−ＬＣＤについて説明する。カラーＡＭ−ＬＣ
Ｄでは、図６に見られるように、ＴＦＴアレイ基板１
と、カラー表示機能をもたせるために透明基板２１に着
色層２２を重ねたカラーフィルター基板（以下ＣＦ基板
と略す）２を対向させて、両基板間に液晶３をはこみ込
む。液晶３はＴＦＴアレイ基板１及びＣＦ基板２の上に
形成された配向膜４上に分子の光軸が一定方向を向くよ
うに配向される。ＴＦＴアレイ基板１上のＴＦＴ素子１
２は、透明基板１１上に、ゲート電極１３、絶縁膜１
４、アモルファスＳｉ１５、ドレイン電極１６、ソース
電極１７、及びカバー絶縁膜１８を有し、ソース電極１
７には透明表示電極１９を接続する。図５の信号線５１
がドレイン電極１６に、走査線５２がゲート電極１３
に、スイッチング素子５４がＴＦＴ素子１２に、単位画
素５３が透面表示電極１９に相当する。A color AM-LCD using a TFT will be described with reference to FIGS. 6 and 7. Color AM-LC
In D, as seen in FIG. 6, the TFT array substrate 1
Then, a color filter substrate (hereinafter abbreviated as CF substrate) 2 in which a colored layer 22 is superposed on a transparent substrate 21 in order to have a color display function is opposed to each other, and a liquid crystal 3 is embedded between both substrates. The liquid crystal 3 is aligned on the alignment film 4 formed on the TFT array substrate 1 and the CF substrate 2 so that the optical axes of the molecules are oriented in a certain direction. TFT element 1 on TFT array substrate 1
2 is a gate electrode 13 and an insulating film 1 on the transparent substrate 11.
4, an amorphous Si 15, a drain electrode 16, a source electrode 17, and a cover insulating film 18, and the source electrode 1
A transparent display electrode 19 is connected to 7. Signal line 51 of FIG.
Is the drain electrode 16, and the scanning line 52 is the gate electrode 13
The switching element 54 corresponds to the TFT element 12, and the unit pixel 53 corresponds to the transparent display electrode 19.
【０００４】ＣＦ基板２は、透明基板２１、遮光膜２
３、着色層２２、透明電極２４からなる。遮光膜２３
は、通常ＴＦＴアレイ基板１に対向させた場合、ＴＦＴ
素子１２、ゲート電極１３、ドレイン電極１６の上部に
位置するように設置され、光透過用の開口部が設けられ
る。遮光膜２３の材質は金属、樹脂などである。着色層
２２は樹脂等で形成され、赤、緑、青の各着色層が規則
正しく配列されている。また着色層２２は、さらに樹脂
によって被覆される場合がある。配列の規則はカラーＬ
ＣＤの用途（ＴＶ用、ＯＡ機器用等）によって、モザイ
ク型、トライアングル型、ストライプ型などがあるが、
ストライプ型の場合の平面透過図を図７に示す。The CF substrate 2 includes a transparent substrate 21 and a light shielding film 2.
3, a colored layer 22, and a transparent electrode 24. Light-shielding film 23
Is a TFT when facing the TFT array substrate 1.
It is installed so as to be located above the element 12, the gate electrode 13, and the drain electrode 16, and an opening for transmitting light is provided. The material of the light shielding film 23 is metal, resin or the like. The colored layer 22 is made of resin or the like, and the red, green, and blue colored layers are regularly arranged. The colored layer 22 may be further covered with resin. The arrangement rule is color L
There are mosaic type, triangle type, stripe type, etc. depending on the use of CD (for TV, OA equipment, etc.).
FIG. 7 shows a plane transmission diagram in the case of the stripe type.
【０００５】次にＴＦＴを、スイッチング素子としたカ
ラーＡＭ−ＬＣＤの動作の概略を図６を参照して述べ
る。ゲート電極１３に電圧をかけると、アモルファスＳ
ｉ１５内にチャネルが形成され、ソース電極１７及び透
明表示電極１９は、ドレイン電極１６と同電位になる。
ドレイン電極１６から透明表示電極１９に注入された電
荷は、ゲート電極１３の電圧を切って、アモルファスＳ
ｉ１５内のチャネルが消滅した後も、透明表示電極１９
と、ＣＦ基板２の透明電極２４間をコンデンサとなし
て、一定時間保持される。アモルファスＳｉ１５内に、
チャネルが形成されない間は、透明表示電極１９と、透
明電極２４間の電位は、ドレイン電圧の変化に影響を受
けない。液晶３は、透明表示電極１９と、透明電極２４
間の電位差に従って、配向方向を変化させる。すなわ
ち、液晶分子の光軸方向が、電位差に従って変化するこ
とになり、透明表示電極１９と、透明電極２４間の光透
過率が電位差に依存して変化する。色表示は赤、緑、青
の着色層を透過した、各々の色の透過光の混合として表
現されるので、各単位画素部（＝透面素子電極１９）の
光透過量の変化が色変化として対応する。このように、
カラーＡＭ−ＬＣＤでは個々の単位画素を独立して駆動
させ、カラー表示をすることができる。Next, the outline of the operation of the color AM-LCD in which the TFT is used as a switching element will be described with reference to FIG. When voltage is applied to the gate electrode 13, amorphous S
A channel is formed in i15, and the source electrode 17 and the transparent display electrode 19 have the same potential as the drain electrode 16.
The charges injected from the drain electrode 16 into the transparent display electrode 19 turn off the voltage of the gate electrode 13 to cause an amorphous S
Even after the channel in i15 disappears, the transparent display electrode 19
Then, a space is formed between the transparent electrodes 24 of the CF substrate 2 and is held for a certain period of time. In the amorphous Si15,
While the channel is not formed, the potential between the transparent display electrode 19 and the transparent electrode 24 is not affected by the change in drain voltage. The liquid crystal 3 includes a transparent display electrode 19 and a transparent electrode 24.
The orientation direction is changed according to the potential difference between the two. That is, the optical axis direction of the liquid crystal molecules changes according to the potential difference, and the light transmittance between the transparent display electrode 19 and the transparent electrode 24 changes depending on the potential difference. Since the color display is expressed as a mixture of transmitted light of each color transmitted through the red, green, and blue colored layers, a change in the amount of light transmission of each unit pixel portion (= transparent surface element electrode 19) causes a color change. Correspond as. in this way,
In the color AM-LCD, each unit pixel can be independently driven to perform color display.
【０００６】[0006]
【発明が解決しようとする課題】この従来のＴＦＴをス
イッチング素子とした、カラーＡＭ−ＬＣＤ（以下カラ
ーＴＦＴＬＣＤと称す）は、カラーＴＦＴＬＣＤ内に入
射する光によって、ＴＦＴ素子内に、光電流によるチャ
ネルが形成され、単位画素部に保持された電圧が変化す
るという問題点を有す。特に、ＣＦ基板上に遮光膜を有
するカラーＴＦＴＬＣＤでは、遮光膜からの反射光がア
モルファスＳｉ内部に光電流を生じさせるという問題点
がある。光電流によりチャネルが形成され、単位画素部
の電圧が変化すると、所望の光透過率が得られないこと
になり、表示画面上は色むらといった欠陥となり現れ
る。A color AM-LCD (hereinafter referred to as a color TFT LCD) using the conventional TFT as a switching element is a channel due to a photocurrent in the TFT element by light incident on the color TFT LCD. Is formed, and the voltage held in the unit pixel portion changes. Particularly, in a color TFT LCD having a light shielding film on a CF substrate, there is a problem that the reflected light from the light shielding film causes a photocurrent inside the amorphous Si. When a channel is formed by the photocurrent and the voltage of the unit pixel portion changes, the desired light transmittance cannot be obtained, and defects such as color unevenness appear on the display screen.
【０００７】通常、光電流によるチャネルの形成を抑制
するため、ゲート電極に逆電圧をかけるが、そのため多
大な駆動電力を要するという問題がある。遮光膜は、ゲ
ート電極、ドレイン電極からの横電界による、液晶の配
向異常に伴う表示不良（以下ディスクリネーションと称
する）を、表示画面から遮蔽するため不可欠のものであ
る。特開昭６２−２５０４１６号のように、ＴＦＴ側に
遮光層を設けたり、ＣＦ側の遮光膜を廃し、着色層の重
なりで遮光しようという試みもあるが、十分な遮光効果
を得るためには、着色層の重なりを十分厚くしなければ
ならず、段差によるディスクリネーション発生の可能性
が考えられるので好ましくない。Usually, a reverse voltage is applied to the gate electrode in order to suppress the formation of a channel due to a photocurrent, but there is a problem that a large amount of driving power is required. The light-shielding film is indispensable for shielding from the display screen a display defect (hereinafter referred to as disclination) due to an abnormal alignment of liquid crystal due to a lateral electric field from the gate electrode and the drain electrode. As disclosed in Japanese Patent Laid-Open No. 62-250416, there is an attempt to provide a light-shielding layer on the TFT side or to abolish the light-shielding film on the CF side so that the colored layers overlap to shield light. However, the overlapping of the colored layers must be made sufficiently thick, and disclination may occur due to steps, which is not preferable.
【０００８】[0008]
【課題を解決するための手段】本発明は、カラー液晶デ
ィスプレイにおいて、対向する２枚の透明基板のうち一
方が、少なくとも透明基板上に所定パターンで形成され
る遮光膜と、前記透明基板上に、前記遮光膜の一部を覆
う形で形成され、かつ他の色の着色層と互いに重なる部
分を持つ、各々赤、緑、青の着色層と透明電極とを有す
るカラー液晶ディスプレイである。本発明のカラー液晶
ディスプレイは、ＣＦ基板の、対向するＴＦＴアレイ基
板上に形成した、ＴＦＴ素子と対向する部分の着色層
を、複数層重ねるという構造を有する。さらに着色層の
重なり部分では、着色層表面に故意に凹凸を形成する場
合もある。According to the present invention, in a color liquid crystal display, one of two transparent substrates facing each other is provided with a light-shielding film formed on at least the transparent substrate in a predetermined pattern, and a transparent film on the transparent substrate. A color liquid crystal display which has red, green, and blue colored layers and transparent electrodes which are formed so as to cover a part of the light-shielding film and have portions overlapping with colored layers of other colors. The color liquid crystal display of the present invention has a structure in which a plurality of colored layers, which are formed on the opposing TFT array substrate of the CF substrate and face the TFT element, are stacked. Further, in the overlapping portion of the colored layers, irregularities may be intentionally formed on the surface of the colored layers.
【０００９】[0009]
【作用】着色層を複数層重ねることによって、光の吸収
率を大きくし、遮光膜からの反射を低減するという効果
が得られる。遮光膜を覆う部分の着色層を全領域にわた
って重ねると、それによる段差を原因とするディスクリ
ネーションが発生する。これを表示画面から遮蔽するた
めには、遮光膜領域を広げなければならず、開口率が低
下し画面が暗くなるという問題が生ずる。この問題を回
避するためには、着色層を重ねる領域をＴＦＴ素子に光
が反射する部分のみに限定する。遮光領域の拡大が必要
となっても最小限に留められるためである。さらに、重
なり部分で着色層表面に凹凸を形成するのは、凹凸によ
る光の乱反射を利用して、ＴＦＴ素子内に反射される光
を低減するためである。ただし、着色層表面の凹凸形成
は、ＣＦ基板製造工程、またＣＦ基板構造の制約により
不可能な場合もある。By stacking a plurality of colored layers, the effect of increasing the light absorption rate and reducing the reflection from the light shielding film can be obtained. When the colored layer covering the light-shielding film is overlapped over the entire area, a disclination due to a step due to it is generated. In order to shield this from the display screen, the light-shielding film region must be widened, which causes a problem that the aperture ratio decreases and the screen becomes dark. In order to avoid this problem, the region where the colored layers are overlapped is limited to only the portion where the TFT element reflects light. This is because even if the light-shielding area needs to be expanded, it can be minimized. Further, the reason why the unevenness is formed on the surface of the colored layer at the overlapping portion is to reduce the light reflected in the TFT element by utilizing the irregular reflection of light by the unevenness. However, it may be impossible to form the unevenness on the surface of the colored layer due to the CF substrate manufacturing process and the restrictions of the CF substrate structure.
【００１０】[0010]
【実施例】次に本発明の実施例について図面を参照して
説明する。 〔実施例１〕図１は、本発明の第１実施例のカラーＴＦ
ＴＬＣＤの断面図、図２は本発明の第１実施例のカラー
ＬＣＤのＣＦ基板の平面透過図である。ＴＦＴアレイ基
板１上に、ＴＦＴ素子１２を形成する場合、透明基板１
１上に、ゲート電極１３、絶縁膜１４、アモルファスＳ
ｉ１５、ドレイン電極１６、ソース電極１７を各々フォ
トレジスト工程によって形成する。さらに表示部となる
透明表示電極１９と、カバー絶縁膜１８を形成すると、
ＴＦＴアレイ基板１が完成する。透明表示電極１９は、
ＣＦ基板２にＴＦＴアレイ基板１を対向させた場合、透
明基板２１上に形成した遮光膜２３の開口部と対向し、
これが表示画素となる。ＣＦ基板２には、遮光膜２３以
外に赤、緑、青の着色層２２と、透明電極２４が設けら
れている。カラーＴＦＴＬＣＤは、ＴＦＴアレイ基板１
及び、ＣＦ基板２の表面に配向膜４を形成し、これらを
対向させて液晶３を封入して得られる。Embodiments of the present invention will now be described with reference to the drawings. [Embodiment 1] FIG. 1 shows a color TF according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view of the TLCD, and FIG. 2 is a transparent plan view of the CF substrate of the color LCD according to the first embodiment of the present invention. When the TFT element 12 is formed on the TFT array substrate 1, the transparent substrate 1
1, the gate electrode 13, the insulating film 14, and the amorphous S
i15, the drain electrode 16, and the source electrode 17 are formed by a photoresist process. Further, when the transparent display electrode 19 which becomes the display portion and the cover insulating film 18 are formed,
The TFT array substrate 1 is completed. The transparent display electrode 19 is
When the TFT array substrate 1 faces the CF substrate 2, it faces the opening of the light shielding film 23 formed on the transparent substrate 21,
This becomes a display pixel. In addition to the light-shielding film 23, the CF substrate 2 is provided with red, green and blue colored layers 22 and a transparent electrode 24. Color TFT LCD is TFT array substrate 1
Further, the alignment film 4 is formed on the surface of the CF substrate 2, and the liquid crystal 3 is sealed by facing them.
【００１１】本発明のカラーＴＦＴＬＣＤの特徴は、Ｃ
Ｆ基板２の着色層２２の形状にある。図１に見られるＣ
Ｆ基板２の断面図では、ＴＦＴ素子１２と、対向する部
分の着色層２２が、赤、青、緑と３層になっている。こ
れを平面透過図に示したものが図２である。各色の着色
層２２はストライプ形状であるが、ＴＦＴ素子１２と対
向する部分のみ、遮光膜２３下で突起もしくは独立した
島状の着色層２２が重なっている。これらの重なりは、
着色層２２をフォトレジスト工程、もしくは印刷工程に
よって形成する際、図２の各々の着色層形状のマスクに
より、赤、青、緑の順に着色層２２を形成することによ
って得られる。これらの重なりの色順は任意であり、任
意の色順に着色層を形成していくことにより、任意の色
順の重なりが得られる。The characteristic of the color TFT LCD of the present invention is that C
It is in the shape of the colored layer 22 of the F substrate 2. C seen in Figure 1
In the cross-sectional view of the F substrate 2, the TFT element 12 and the colored layer 22 in the facing portion are three layers of red, blue, and green. FIG. 2 shows this in a plan view. The colored layer 22 of each color has a striped shape, but only the portion facing the TFT element 12 is overlapped with the colored layer 22 having protrusions or independent islands under the light shielding film 23. These overlaps are
When the colored layer 22 is formed by the photoresist process or the printing process, it is obtained by forming the colored layer 22 in the order of red, blue, and green by using the mask of each colored layer shape in FIG. The color order of these overlaps is arbitrary, and by forming the colored layers in any color order, an overlap in any color order can be obtained.
【００１２】図１に見られる着色層２２の三層の重なり
によって、遮光膜２３からのアモルファスＳｉ１５への
反射光が低減される。遮光膜２３上の着色層２２が厚さ
１μｍの時、一層の場合はアモルファスＳｉ１５上への
反射率が約３５％、二層では約１５％、三層で約５％に
低下する。これに伴い、アモルファスＳｉ１５内に発生
する光電流が低下し、チャネルの形成を抑制するため
に、ゲート電極に印加しておく逆電圧の限界値が小さく
なる。例えば、ｎチャネル型ＴＦＴで着色層２２が一層
の場合、光電流による色ムラ抑制のために必要なゲート
電極の逆電圧は、−５Ｖであったが、二層の場合は−３
Ｖ、三層の場合−１Ｖまで低減できた。Due to the overlapping of the three colored layers 22 shown in FIG. 1, the reflected light from the light shielding film 23 to the amorphous Si 15 is reduced. When the thickness of the colored layer 22 on the light-shielding film 23 is 1 μm, the reflectance on the amorphous Si 15 is about 35% in the case of one layer, about 15% in the case of two layers, and about 5% in the case of three layers. Along with this, the photocurrent generated in the amorphous Si 15 is reduced, and the limit value of the reverse voltage applied to the gate electrode is reduced in order to suppress the formation of the channel. For example, in the case of an n-channel TFT having one colored layer 22, the reverse voltage of the gate electrode required for suppressing color unevenness due to photocurrent was -5 V, but in the case of two layers, it was -3.
In the case of V and three layers, it could be reduced to -1V.
【００１３】〔実施例２〕図３に本発明の第２の実施例
のカラーＴＦＴＬＣＤの断面図、図４に第２の実施例に
使用したＣＦ基板の平面透過図である。第２の実施例の
着色層の配例はトライアングル型である。第２の実施例
のＣＦ基板作成において、着色層の形成は印刷工程によ
って行う。まず透明基板２１上に遮光膜２３を形成した
後、赤の着色層２２を図４のパターンに従って印刷す
る。次に青の着色層２２を図４のパターンに従って印刷
する。最後に緑の着色層２２を図４のパターンに従って
印刷する。この時、着色層２２はＴＦＴ素子１上で他の
色の着色層２２と重なる部分の表面に凹凸を設ける。こ
の凹凸は、着色層２２を印刷する版上に凹凸を形成して
おき、これを転写することによって形成される。さらに
樹脂コート膜２５により、着色層２２を被覆した後透明
電極２４を形成する。ただし、着色層の形成の色順は任
意であり、それに従って着色層重なりの色順も任意に決
定される。[Embodiment 2] FIG. 3 is a sectional view of a color TFT LCD according to a second embodiment of the present invention, and FIG. 4 is a plan view of a CF substrate used in the second embodiment. The arrangement of the colored layers of the second embodiment is a triangle type. In forming the CF substrate of the second embodiment, the colored layer is formed by a printing process. First, after forming the light shielding film 23 on the transparent substrate 21, the red colored layer 22 is printed according to the pattern of FIG. Next, the blue colored layer 22 is printed according to the pattern of FIG. Finally, the green colored layer 22 is printed according to the pattern of FIG. At this time, the colored layer 22 is provided with unevenness on the surface of the portion overlapping the colored layer 22 of another color on the TFT element 1. The unevenness is formed by forming the unevenness on the plate on which the colored layer 22 is printed and transferring the unevenness. Furthermore, the transparent electrode 24 is formed after the colored layer 22 is covered with the resin coat film 25. However, the color order for forming the colored layers is arbitrary, and the color order for overlapping the colored layers is also determined accordingly.
【００１４】着色層表面上の凹凸によって、着色層に入
射し、着色層下部の遮光膜から反射する光は、散乱され
る。従って、着色層の重なり部分の表面に凹凸を設けて
おくと、着色層の重なりによる吸収率の増大と光の乱反
射の効果により、ＴＦＴ素子内アモルファスＳｉ上に反
射される光量は、着色層表面に凹凸を設けていない場合
に比べ更に低減する。例えば、実施例１と同様、着色層
厚さが１μｍの時、第２の実施例では、着色層３層の重
ねの時、アモルファスＳｉ１５上への反射は約２％まで
低減される。また、実施例１と同様、着色層３層重ねに
よりアモルファスＳｉ１５上への反射を５％にするため
には着色層厚さは０．７μｍで良い。すなわち、カラー
ＴＦＴＬＣＤ開口部の光透過率を大きくすることがで
き、より高輝度の画面が得られる。Light incident on the colored layer and reflected from the light-shielding film below the colored layer is scattered by the unevenness on the surface of the colored layer. Therefore, if unevenness is provided on the surface of the overlapping portions of the colored layers, the amount of light reflected on the amorphous Si in the TFT element is increased by the effect of diffused reflection of light due to the increase of the absorptance due to the overlapping of the colored layers. It is further reduced as compared with the case where no unevenness is provided. For example, as in Example 1, when the thickness of the colored layer is 1 μm, in the second example, when three colored layers are stacked, the reflection on the amorphous Si 15 is reduced to about 2%. Further, as in the case of Example 1, the thickness of the colored layer may be 0.7 μm in order to achieve 5% reflection on the amorphous Si 15 by stacking three colored layers. That is, the light transmittance of the color TFT LCD opening can be increased, and a screen with higher brightness can be obtained.
【００１５】しかし、一方第２の実施例では、着色層表
面の凹凸が、ディスクリネーションの発生の原因になら
ないように、樹脂コート膜２５で被覆して平坦化をはか
らなければならない。また、着色層２２をフォトレジス
ト工程を利用して形成すると、部分的に凹凸を形成する
工程を別に加えなければならず、製造工程が繁雑にな
る。このように、第２の実施例ではＣＦ基板の構造、製
造工程などに制約をうける。従って、カラーＴＦＴＬＣ
Ｄに要求される特性に従って、ＣＦ基板に要求される構
造、特性などにより、第１の実施例の方式もしくは第２
の実施例の方式を選択することが望ましい。On the other hand, in the second embodiment, the unevenness of the colored layer surface must be covered with the resin coat film 25 for flattening so as not to cause disclination. In addition, if the colored layer 22 is formed by using a photoresist process, a process of partially forming irregularities must be added, which complicates the manufacturing process. As described above, the structure and manufacturing process of the CF substrate are restricted in the second embodiment. Therefore, color TFTLC
The method of the first embodiment or the second method according to the structure and characteristics required for the CF substrate according to the characteristics required for D.
It is desirable to select the method of the above embodiment.
【００１６】[0016]
【発明の効果】以上説明したように本発明は、ＣＦ基板
の着色層をＴＦＴ素子と対向する部分で複数層重ねる構
造をとることにより、ＣＦ基板遮光膜からＴＦＴ素子内
への光入射を低減できるという効果を有する。これによ
りＴＦＴ素子内に発生する光電流を抑制し、ゲート電極
への逆電圧を低減することができる。すなわち、カラー
ＴＦＴＬＣＤの駆動電力を低減することができるという
効果を有する。さらに、上記の着色層重ね領域のみに着
色層表面に故意に凹凸を導入することにより、着色層表
面で光を散乱させ、ＴＦＴ素子内への光入射をさらに低
減するという効果を複合して奏される場合も有するもの
である。As described above, according to the present invention, by adopting a structure in which a plurality of colored layers of the CF substrate are overlapped with each other in a portion facing the TFT element, light incident from the CF substrate light shielding film into the TFT element is reduced. It has the effect of being able to. Thereby, the photocurrent generated in the TFT element can be suppressed and the reverse voltage to the gate electrode can be reduced. That is, there is an effect that the driving power of the color TFT LCD can be reduced. Further, by intentionally introducing irregularities on the surface of the colored layer only in the overlapping region of the colored layer, light is scattered on the surface of the colored layer, and the effect of further reducing the incidence of light into the TFT element is combined. There is also a case to be done.
【図１】本発明の第１実施例のカラーＴＦＴＬＣＤの断
面図。FIG. 1 is a sectional view of a color TFT LCD according to a first embodiment of the present invention.
【図２】本発明の第１実施例のカラーＴＦＴＬＣＤのＣ
Ｆ基板の平面透過図。FIG. 2 C of the color TFT LCD of the first embodiment of the present invention
The plane transparent figure of F board.
【図３】本発明の第２実施例のカラーＴＦＴＬＣＤの断
面図。FIG. 3 is a sectional view of a color TFT LCD according to a second embodiment of the present invention.
【図４】本発明の第２実施例のカラーＬＣＤのＣＦ基板
の平面透過図。FIG. 4 is a transparent plan view of a CF substrate of a color LCD according to a second embodiment of the present invention.
【図５】ＡＭ−ＬＣＤの配線平面略図。FIG. 5 is a schematic wiring plan view of an AM-LCD.
【図６】従来のカラーＴＦＴＬＣＤの断面図。FIG. 6 is a sectional view of a conventional color TFT LCD.
【図７】ストライプ状着色層を有する従来のカラーＴＦ
ＴＬＣＤの平面図。FIG. 7: Conventional color TF having a striped colored layer
The top view of TLCD.
１ ＴＦＴアレイ基板 ２ ＣＦ基板 ３ 液晶 ４ 配向膜 １１ 透明基板 １２ ＴＦＴ素子 １３ ゲート電極 １４ 絶縁膜 １５ アモルファスＳｉ １６ ドレイン電極 １７ ソース電極 １８ カバー絶縁膜 １９ 透明表示電極 ２１ 透明基板 ２２ 着色層 ２３ 遮光膜 ２４ 透明電極 ２５ 樹脂コート膜 ５１ 信号線 ５２ 走査線 ５３ 単位画素 ５４ スイッチング素子 1 TFT array substrate 2 CF substrate 3 Liquid crystal 4 Alignment film 11 Transparent substrate 12 TFT element 13 Gate electrode 14 Insulating film 15 Amorphous Si 16 Drain electrode 17 Source electrode 18 Cover insulating film 19 Transparent display electrode 21 Transparent substrate 22 Coloring layer 23 Light-shielding film 24 transparent electrode 25 resin coat film 51 signal line 52 scanning line 53 unit pixel 54 switching element
Claims (4)
する２枚の透明基板のうち一方が、少なくとも透明基板
上に所定パターンで形成される遮光膜と、前記透明基板
上に、前記遮光膜の一部を覆う形で形成され、かつ他の
色の着色層と互いに重なる部分を持つ、各々赤、緑、青
の着色層と透明電極とを有することを特徴とするカラー
液晶ディスプレイ。1. In a color liquid crystal display, one of two facing transparent substrates has at least a light-shielding film formed in a predetermined pattern on the transparent substrate, and a part of the light-shielding film on the transparent substrate. A color liquid crystal display, characterized in that it has red, green, and blue colored layers and transparent electrodes, each of which is formed in a covering shape and has a portion overlapping with another colored layer.
する２枚の透明基板のうち、一方に形成される着色層の
相互の重なりが、前記透明基板上に形成された該遮光膜
上にあることを特徴とする請求項１記載のカラー液晶デ
ィスプレイ。2. In a color liquid crystal display, the colored layers formed on one of the two transparent substrates facing each other overlap each other on the light-shielding film formed on the transparent substrate. The color liquid crystal display according to claim 1.
する２枚の透明基板のうち、一方に形成される着色層の
相互の重なりが、該透明基板に対向するもう一方の透明
基板上に配置された、スイッチング素子と対向する位置
にあることを特徴とする請求項１記載のカラー液晶ディ
スプレイ。3. In a color liquid crystal display, a colored layer formed on one of two transparent substrates facing each other is arranged such that the overlapping of the colored layers is arranged on the other transparent substrate facing the transparent substrate. The color liquid crystal display according to claim 1, wherein the color liquid crystal display is located at a position facing the switching element.
する２枚の透明基板のうち、一方に形成される着色層の
相互に重なる部分のみ、着色層表面に故意に形成される
凹凸を有することを特徴とする請求項１記載のカラー液
晶ディスプレイ。4. A color liquid crystal display, characterized in that, of two transparent substrates facing each other, only the portions of the colored layers formed on one side that overlap each other have irregularities intentionally formed on the surface of the colored layer. The color liquid crystal display according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5142524A JP2806741B2 (en) | 1993-05-24 | 1993-05-24 | Color liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5142524A JP2806741B2 (en) | 1993-05-24 | 1993-05-24 | Color liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06331975A true JPH06331975A (en) | 1994-12-02 |
| JP2806741B2 JP2806741B2 (en) | 1998-09-30 |
Family
ID=15317366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5142524A Expired - Fee Related JP2806741B2 (en) | 1993-05-24 | 1993-05-24 | Color liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2806741B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08328000A (en) * | 1995-06-01 | 1996-12-13 | Semiconductor Energy Lab Co Ltd | Active matrix type liquid crystal display device |
| KR20010032543A (en) * | 1997-11-28 | 2001-04-25 | 모리시타 요이찌 | Reflection-type display device and image device using reflection-type display device |
| JP2001281704A (en) * | 2000-01-26 | 2001-10-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
| JP2002023148A (en) * | 2000-04-18 | 2002-01-23 | Semiconductor Energy Lab Co Ltd | Electrooptical device |
| JP2002116450A (en) * | 2000-10-10 | 2002-04-19 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device and its manufacturing method |
| US6770908B2 (en) | 2000-07-26 | 2004-08-03 | Seiko Epson Corporation | Electro-optical device, substrate for electro-optical device, and projecting type display device |
| KR100552279B1 (en) * | 1997-11-26 | 2006-04-28 | 삼성전자주식회사 | Color filter substrate |
| JP2008116873A (en) * | 2006-11-08 | 2008-05-22 | Epson Imaging Devices Corp | Liquid crystal display device |
| US7423709B2 (en) | 2000-10-20 | 2008-09-09 | Nec Lcd Technologies, Ltd. | Color filter substrate, manufacturing method of color filter substrate, active matrix type liquid crystal display, and manufacturing method of active matrix type liquid crystal display |
| JP2009192795A (en) * | 2008-02-14 | 2009-08-27 | Seiko Instruments Inc | Liquid crystal display |
| JP2010217926A (en) * | 2000-01-26 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
| JP2011180616A (en) * | 2000-04-18 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | Electro-optic device and electronic equipment |
| JP2018087969A (en) * | 2016-11-22 | 2018-06-07 | 株式会社半導体エネルギー研究所 | Display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250416A (en) * | 1986-04-23 | 1987-10-31 | Stanley Electric Co Ltd | Tft built-in type color liquid crystal display element |
| JPH0224604A (en) * | 1988-07-14 | 1990-01-26 | Toppan Printing Co Ltd | Color filter |
| JPH0359522A (en) * | 1989-07-28 | 1991-03-14 | Hitachi Ltd | Liquid crystal display device |
-
1993
- 1993-05-24 JP JP5142524A patent/JP2806741B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250416A (en) * | 1986-04-23 | 1987-10-31 | Stanley Electric Co Ltd | Tft built-in type color liquid crystal display element |
| JPH0224604A (en) * | 1988-07-14 | 1990-01-26 | Toppan Printing Co Ltd | Color filter |
| JPH0359522A (en) * | 1989-07-28 | 1991-03-14 | Hitachi Ltd | Liquid crystal display device |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08328000A (en) * | 1995-06-01 | 1996-12-13 | Semiconductor Energy Lab Co Ltd | Active matrix type liquid crystal display device |
| KR100552279B1 (en) * | 1997-11-26 | 2006-04-28 | 삼성전자주식회사 | Color filter substrate |
| KR20010032543A (en) * | 1997-11-28 | 2001-04-25 | 모리시타 요이찌 | Reflection-type display device and image device using reflection-type display device |
| JP2001281704A (en) * | 2000-01-26 | 2001-10-10 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
| US8017456B2 (en) | 2000-01-26 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2010217926A (en) * | 2000-01-26 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device |
| JP2011180616A (en) * | 2000-04-18 | 2011-09-15 | Semiconductor Energy Lab Co Ltd | Electro-optic device and electronic equipment |
| JP2015064604A (en) * | 2000-04-18 | 2015-04-09 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2019086797A (en) * | 2000-04-18 | 2019-06-06 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2018063444A (en) * | 2000-04-18 | 2018-04-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2017111452A (en) * | 2000-04-18 | 2017-06-22 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2016053745A (en) * | 2000-04-18 | 2016-04-14 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP2002023148A (en) * | 2000-04-18 | 2002-01-23 | Semiconductor Energy Lab Co Ltd | Electrooptical device |
| JP2012190043A (en) * | 2000-04-18 | 2012-10-04 | Semiconductor Energy Lab Co Ltd | Electro-optic device |
| JP2013054384A (en) * | 2000-04-18 | 2013-03-21 | Semiconductor Energy Lab Co Ltd | Electro-optic device |
| JP2013190833A (en) * | 2000-04-18 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | Electro-optic device |
| JP2014067067A (en) * | 2000-04-18 | 2014-04-17 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JP2014115660A (en) * | 2000-04-18 | 2014-06-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JP2014157362A (en) * | 2000-04-18 | 2014-08-28 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device and electronic apparatus |
| US6770908B2 (en) | 2000-07-26 | 2004-08-03 | Seiko Epson Corporation | Electro-optical device, substrate for electro-optical device, and projecting type display device |
| JP2002116450A (en) * | 2000-10-10 | 2002-04-19 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device and its manufacturing method |
| US7423709B2 (en) | 2000-10-20 | 2008-09-09 | Nec Lcd Technologies, Ltd. | Color filter substrate, manufacturing method of color filter substrate, active matrix type liquid crystal display, and manufacturing method of active matrix type liquid crystal display |
| JP2008116873A (en) * | 2006-11-08 | 2008-05-22 | Epson Imaging Devices Corp | Liquid crystal display device |
| JP2009192795A (en) * | 2008-02-14 | 2009-08-27 | Seiko Instruments Inc | Liquid crystal display |
| JP2018087969A (en) * | 2016-11-22 | 2018-06-07 | 株式会社半導体エネルギー研究所 | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2806741B2 (en) | 1998-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7212267B2 (en) | Liquid crystal display device with color filter substrate height greater in reflection region than transmission region | |
| EP1109053B1 (en) | Display apparatus with colour filter and method of manufacturing the same | |
| US7750996B2 (en) | Liquid crystal display device | |
| US7486355B2 (en) | Color filter panel and liquid crystal display including the same | |
| KR100734461B1 (en) | Liquid crystal display device | |
| US7616277B2 (en) | Transflective LCD device having dual thickness color filter | |
| US7442566B2 (en) | Liquid crystal display device and manufacturing method for the same | |
| JP3485997B2 (en) | Liquid crystal display | |
| KR100907479B1 (en) | Color filter substrate and liquid crystal display having the same | |
| KR100989339B1 (en) | Liquid crystal display device and method for manufacturing there of | |
| KR20010040214A (en) | Liquid crystal display panel and method of fabricating the same | |
| JP2806741B2 (en) | Color liquid crystal display | |
| JPH1048640A (en) | Active matrix type liquid crystal display device | |
| JP3625396B2 (en) | Display device | |
| EP2299298A1 (en) | Color filter substrate and liquid crystal display device | |
| US6741305B2 (en) | Color display device | |
| US7342620B2 (en) | Color filter array panel comprising a blue pixel contrast ratio greater than twice the red pixel contrast ratio and liquid crystal display including the same | |
| WO2007077644A1 (en) | Liquid crystal display device | |
| JP4159668B2 (en) | LCD panel | |
| JP4511248B2 (en) | Liquid crystal display | |
| JPH0990339A (en) | Liquid crystal display device | |
| JP2003322845A (en) | Liquid crystal display device | |
| KR20050055435A (en) | Liquid crystal display panel and method of fabricating the same | |
| JP2001290144A (en) | Liquid crystal display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19960723 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070724 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080724 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090724 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100724 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110724 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |