JPH06295972A - Positioning structure for lead frame of hybrid ic and manufacture of hybrid ic - Google Patents

Positioning structure for lead frame of hybrid ic and manufacture of hybrid ic

Info

Publication number
JPH06295972A
JPH06295972A JP8066293A JP8066293A JPH06295972A JP H06295972 A JPH06295972 A JP H06295972A JP 8066293 A JP8066293 A JP 8066293A JP 8066293 A JP8066293 A JP 8066293A JP H06295972 A JPH06295972 A JP H06295972A
Authority
JP
Japan
Prior art keywords
metal substrate
lead frame
lead
positioning
hybrid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8066293A
Other languages
Japanese (ja)
Other versions
JP3173215B2 (en
Inventor
Yukio Tsuzuki
幸夫 都築
Shinichi Hirose
伸一 広瀬
Yutaka Fujimoto
裕 藤本
Hatsuyuki Kato
初幸 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP8066293A priority Critical patent/JP3173215B2/en
Publication of JPH06295972A publication Critical patent/JPH06295972A/en
Application granted granted Critical
Publication of JP3173215B2 publication Critical patent/JP3173215B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

PURPOSE:To prevent imperfect molding due to position deviation of a lead frame, and imperfect connection of a lead part due to heat at the time of resin molding. CONSTITUTION:Position alignment protrusions 28 formed on a metal substrate 21 are engaged with engaging holes of fixing segment parts 34 formed in a frame part 29 of a lead frame 31, and a lead frame 31 is positioned and fixed to the metal substrate 21 by caulking tips of the positioning protrusions 28. After that, a circuit element like an IC chip 25 is mounted on the metal substrate 21, and lead parts 29 are electrically connected with a wiring part 24 on the metal substrate 21 via bonding wires 35. After the whole part is resin- molded, leads and roots of the fixing segment parts 34 are cut off, and a tie bar 32 is cut and removed. Thus the manufacture of an hybrid IC is completed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、金属基板に対するリー
ドフレームの位置決め精度を向上したハイブリッドIC
のリードフレームの位置決め構造及びハイブリッドIC
の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid IC having improved lead frame positioning accuracy with respect to a metal substrate.
Lead frame positioning structure and hybrid IC
The present invention relates to a manufacturing method of.

【0002】[0002]

【従来の技術】従来のハイブリッドICの一例として、
豊田織機技報No.25,APR.1992の第8頁〜
第12頁に示されているようなスマートパワーモジュー
ルがある。このものは、図5及び図6に示すように、金
属基板11上にドライブIC12等の回路素子を実装す
ると共に、多数本のリード部13を金属基板11の配線
部14に半田付けし、これら全体をモールド樹脂15で
モールドした構成となっている。
2. Description of the Related Art As an example of a conventional hybrid IC,
Toyota Loom Technical Report No. 25, APR. 1992 page 8 ~
There is a smart power module as shown on page 12. As shown in FIGS. 5 and 6, this device mounts a circuit element such as a drive IC 12 on a metal substrate 11 and solders a large number of lead portions 13 to a wiring portion 14 of the metal substrate 11, The entire structure is molded with the molding resin 15.

【0003】[0003]

【発明が解決しようとする課題】ところで、多数本のリ
ード部13は、樹脂モールド終了後に、フレーム部16
から切り離されるものであるから、リード部13を金属
基板11に半田付けする際には、多数本のリード部13
はフレーム部16によりリードフレーム17として一体
化されている。従って、各リード部13の配列ピッチは
正確に保たれた状態で半田付けされることになるが、金
属基板11に対するリードフレーム17の位置決め精度
は概して低く、位置決め治具に対するリードフレーム1
7の位置ずれと、金属基板11の固定位置のずれとが重
なり合って、金属基板11に対してリードフレーム17
が例えば0.2mm〜0.3mm程度も位置ずれした状
態で半田付けされてしまうことがある。このため、樹脂
モールド時に、金型へのリードフレーム17のセット状
態が不完全になってしまうことがあり、これが成形不良
品の発生原因となっている。
By the way, a large number of lead portions 13 are formed in the frame portion 16 after the resin molding is completed.
Therefore, when the lead portions 13 are soldered to the metal substrate 11, a large number of lead portions 13 are
Are integrated as a lead frame 17 by the frame portion 16. Therefore, the lead portions 13 are soldered while the arrangement pitch of the lead portions 13 is accurately maintained, but the positioning accuracy of the lead frame 17 with respect to the metal substrate 11 is generally low, and the lead frame 1 with respect to the positioning jig is
7 and the fixed position of the metal substrate 11 overlap with each other, and the lead frame 17
However, the solder may be soldered in a state of being displaced by about 0.2 mm to 0.3 mm. For this reason, the setting state of the lead frame 17 in the mold may be incomplete during resin molding, which is a cause of defective molding.

【0004】しかも、樹脂モールド時の熱の影響で、リ
ード部13の接続部の半田が軟化するため、リードフレ
ーム17をクランプする治具から加わる力でリード部1
3の半田接続が不完全になったり剥離しまうことがあ
り、これも不良品の発生原因となっている。
Moreover, since the solder at the connecting portion of the lead portion 13 is softened by the influence of heat during resin molding, the lead portion 1 is applied by the force applied from the jig for clamping the lead frame 17.
The solder connection 3 may be incomplete or peeled off, which is also a cause of defective products.

【0005】本発明は、このような事情を考慮してなさ
れたものであり、金属基板に対するリードフレームの位
置決め精度を向上できるハイブリッドICのリードフレ
ームの位置決め構造を提供することを第1の目的とし、
更に、リードフレームの位置ずれに起因する成形不良を
防止できると共に、樹脂モールド時の熱でリード部が接
続不良になることを防止できて、製品の歩留りを向上で
きるハイブリッドICの製造方法を提供することを第2
の目的とする。
The present invention has been made in view of the above circumstances, and a first object thereof is to provide a lead frame positioning structure for a hybrid IC capable of improving the positioning accuracy of the lead frame with respect to the metal substrate. ,
Further, it is possible to prevent a molding defect due to the displacement of the lead frame and prevent a lead part from being poorly connected due to heat at the time of resin molding, thereby providing a hybrid IC manufacturing method capable of improving a product yield. Second thing
The purpose of.

【0006】[0006]

【課題を解決するための手段】上記目的を達成するため
に、本発明のハイブリッドICのリードフレームの位置
決め構造は、金属基板に形成された位置決め突起と、前
記リードフレームのフレーム部に形成されて前記位置決
め突起に嵌め込まれる嵌合孔を有する固定片部とを備
え、前記位置決め突起を前記固定片部の嵌合孔に嵌合し
た状態で、前記位置決め突起の先端部をかしめ付けるこ
とにより、前記金属基板に対してリードフレームを位置
決め固定するように構成したものである。
To achieve the above object, a positioning structure for a lead frame of a hybrid IC according to the present invention comprises a positioning protrusion formed on a metal substrate and a frame portion of the lead frame. A fixed piece portion having a fitting hole to be fitted into the positioning projection, wherein the positioning projection is fitted into the fitting hole of the fixed piece portion, and by caulking the tip end portion of the positioning projection, The lead frame is positioned and fixed to the metal substrate.

【0007】この位置決め構造を利用してハイブリッド
ICを製造する場合には、金属基板に形成した位置決め
突起を、リードフレームのフレーム部に形成した固定片
部の嵌合孔に嵌合して、前記位置決め突起の先端部をか
しめ付けることにより、前記金属基板に対してリードフ
レームを位置決め固定した後、前記金属基板上に回路素
子を実装すると共に、前記リードフレームのリード部と
前記金属基板とをワイヤボンディングで電気的に接続
し、この後、全体を樹脂モールドした後、前記リードフ
レームのリード部と固定片部の根元を切断して、ハイブ
リッドICを製造するようにすれば良い。
When a hybrid IC is manufactured by utilizing this positioning structure, the positioning protrusion formed on the metal substrate is fitted into the fitting hole of the fixing piece formed on the frame portion of the lead frame, After the lead frame is positioned and fixed to the metal substrate by caulking the tip end of the positioning protrusion, the circuit element is mounted on the metal substrate, and the lead portion of the lead frame and the metal substrate are wired. After electrically connecting by bonding and then resin-molding the whole, the roots of the lead portion and the fixed piece portion of the lead frame may be cut to manufacture a hybrid IC.

【0008】[0008]

【作用】本発明の位置決め構造によれば、金属基板に形
成した位置決め突起を、リードフレームのフレーム部に
形成した固定片部の嵌合孔に嵌合した状態で、位置決め
突起の先端部をかしめ付けて、両者を位置決め固定する
ものであるから、両者を位置決め治具を介さずに直接位
置決め固定でき、従来の位置決め治具による位置ずれ要
因を取り除くことができる。この場合、金属基板に対す
るリードフレームの位置決め精度は、固定片部の嵌合孔
の位置精度と位置決め突起の位置精度や両者の半径差に
よって決まるが、両者の位置精度は例えばプレスの加工
精度によって高精度に決めることができ、且つ、両者の
半径差は例えば0.05mmもあれば十分に嵌合可能で
あるため、例えば誤差±0.05mm以下という高精度
の位置決めが可能となる。
According to the positioning structure of the present invention, the positioning projection formed on the metal substrate is caulked at the tip of the positioning projection while being fitted into the fitting hole of the fixing piece formed on the frame portion of the lead frame. In addition, since both are positioned and fixed, it is possible to directly position and fix both without using a positioning jig, and it is possible to eliminate the cause of positional deviation due to the conventional positioning jig. In this case, the positioning accuracy of the lead frame with respect to the metal substrate is determined by the positioning accuracy of the fitting hole of the fixing piece, the positioning accuracy of the positioning protrusions, and the difference in radius between the two. The accuracy can be determined, and the radius difference between the two can be sufficiently fitted if it is, for example, 0.05 mm, so that high-accuracy positioning with an error of ± 0.05 mm or less is possible.

【0009】更に、上記かしめによるリードフレームの
位置決め固定構造によって、リード部の固定と電気的接
続の各機能の役割分担が可能になり、リード部の電気的
接続方式として、接続信頼性が極めて高く且つ高速ボン
ディングが可能でコストの安い“ワイヤボンディング”
を利用することができる。しかも、ワイヤボンディング
を用いれば、その後の樹脂モールド工程等の熱処理工程
での接続部の強度低下や剥離の心配が全く無くなる。ま
た、かしめとワイヤボンディングによる組立は、従来の
半田付けのようなフラックス洗浄が不要であり、組立工
程がクリーンであるという利点もある。
Further, the lead frame positioning and fixing structure by caulking allows the functions of fixing the lead portion and electrical connection to be shared, and the connection reliability of the lead portion is extremely high. "Wire bonding" that enables high-speed bonding and is inexpensive
Can be used. In addition, if wire bonding is used, there is no fear of deterioration of the strength or peeling of the connection portion in the subsequent heat treatment process such as the resin molding process. Further, the assembly by crimping and wire bonding also has an advantage that a flux cleaning such as the conventional soldering is unnecessary and the assembly process is clean.

【0010】その上、予め、一体に多数連結された各リ
ードフレームにそれぞれ金属基板をかしめ付けた状態
で、回路素子の実装とワイヤボンディングを行うことが
でき、リード部の半田付けを廃止できるので、量産性の
ある通常のモノリシックICと同様の組立が可能とな
る。
In addition, the circuit element can be mounted and the wire bonding can be performed in advance in the state where the metal substrates are respectively crimped to the lead frames that are integrally connected in advance, and the soldering of the lead portions can be eliminated. It is possible to assemble the same as a mass-produced normal monolithic IC.

【0011】[0011]

【実施例】以下、本発明をSIP(Single In
line Package)タイプのハイブリッドIC
に適用した一実施例について図1乃至図4を参照して説
明する。図1と図2はハイブリッドICの製造途中のワ
イヤボンディング工程時(樹脂モールド前)の状態を示
す拡大平面図と断面図であり、ハイブリッドICの完成
形態は図4(f)に拡大断面図で示されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to SIP (Single In
line package) type hybrid IC
An embodiment applied to the present invention will be described with reference to FIGS. 1 and 2 are an enlarged plan view and a sectional view showing a state at the time of a wire bonding process (before resin molding) in the course of manufacturing the hybrid IC, and a completed form of the hybrid IC is an enlarged sectional view in FIG. 4 (f). It is shown.

【0012】まず、本実施例のハイブリッドICの構成
を説明する。金属基板21は金属板22上に絶縁層23
を介して配線部24を形成して構成されている。この場
合、金属板22は、プレス加工性,強度,耐応力腐食割
れ性等を考慮して例えば厚さ1.5mmの合金アルミA
5052−H34により形成されている。これ以外の金
属でも、製造するハイブリッドICの構造上、強度的に
問題がなければ、金属板22は、純アルミニウムを用い
ても良く、或は、銅や銅合金にニッケルメッキを施した
ものを用いても良い。但し、金属板22の厚さは放熱性
を損なわないように0.5mm以上にすることが好まし
い。
First, the structure of the hybrid IC of this embodiment will be described. The metal substrate 21 has an insulating layer 23 on the metal plate 22.
The wiring portion 24 is formed via the. In this case, the metal plate 22 is made of, for example, alloy aluminum A having a thickness of 1.5 mm in consideration of press workability, strength, stress corrosion cracking resistance and the like.
5052-H34. If there is no problem in strength with the structure of the hybrid IC to be manufactured using metals other than the above, the metal plate 22 may be pure aluminum, or may be copper or a copper alloy plated with nickel. You may use. However, the thickness of the metal plate 22 is preferably 0.5 mm or more so as not to impair heat dissipation.

【0013】一方、絶縁層23は、例えば約20μmの
厚さのポリイミド樹脂若しくは熱伝導性を改良したSi
2 フィラを含んだ例えば厚さ80μmのエポキシ樹脂
により形成されている。この絶縁層23は金属板22の
上面全体に均一の厚さで積層されている。この絶縁層2
3上に形成された配線部24は、例えば厚さ80μmの
銅箔上に約5μmのニッケルメッキを施し、その上に例
えば約300オングストロームの厚さの金膜が無電解メ
ッキされている。
On the other hand, the insulating layer 23 is made of, for example, a polyimide resin having a thickness of about 20 μm or Si having improved thermal conductivity.
It is made of, for example, an epoxy resin having an O 2 filler and a thickness of 80 μm. The insulating layer 23 is laminated on the entire upper surface of the metal plate 22 with a uniform thickness. This insulating layer 2
The wiring portion 24 formed on the metal layer 3 is, for example, a copper foil having a thickness of 80 μm plated with nickel of about 5 μm, and a gold film having a thickness of, for example, about 300 angstrom is electrolessly plated thereon.

【0014】以上のように構成された金属基板21上に
は、パワーICやモノリシックIC等のICチップ25
やコンデンサ等のその他の回路素子が実装されている。
尚、ICチップ25は、金属基板21上に半田や銀ペー
スト等により固定され、ICチップ25と配線部24と
がボンディングワイヤ26で電気的に接続されている。
このボンディングワイヤ26としては、電流容量に合わ
せて適当な太さの金線或はアルミニウム線を用いれば良
い。
An IC chip 25 such as a power IC or a monolithic IC is provided on the metal substrate 21 having the above structure.
Other circuit elements such as capacitors and capacitors are mounted.
The IC chip 25 is fixed on the metal substrate 21 with solder, silver paste, or the like, and the IC chip 25 and the wiring portion 24 are electrically connected by a bonding wire 26.
As the bonding wire 26, a gold wire or an aluminum wire having an appropriate thickness according to the current capacity may be used.

【0015】上記金属基板21の両サイドには、位置決
め用の孔27(図1参照)がそれぞれ形成され、更に、
金属基板21の4辺部のうち、リード部29を配置する
1辺部を除く残り3辺部には、位置決め突起28がそれ
ぞれ1個ずつ形成されている。各位置決め突起28は、
例えば直径1mm,高さ1mm(かしめ前)の大きさに
形成され、金属基板21の裏面(絶縁層23が形成され
ていない面)側からパンチング加工により形成されてい
る。
Positioning holes 27 (see FIG. 1) are formed on both sides of the metal substrate 21, respectively.
One positioning protrusion 28 is formed on each of the remaining three sides of the four sides of the metal substrate 21 except the one side on which the lead portion 29 is arranged. Each positioning protrusion 28 is
For example, it is formed to have a diameter of 1 mm and a height of 1 mm (before caulking), and is formed by punching from the back surface (surface on which the insulating layer 23 is not formed) side of the metal substrate 21.

【0016】一方、多数本のリード部29は、樹脂モー
ルド工程を終了するまでは、フレーム部30によりリー
ドフレーム31として一体化されている。更に、各リー
ド部29は、製造工程中の変形防止のために途中部でタ
イバー32により連結されている。また、フレーム部3
0には、前記3箇所の位置決め突起28に対応して、嵌
合孔33(図2参照)を有する固定片部34が3箇所に
形成されている。そして、この固定片部34の嵌合孔3
3を位置決め突起28に嵌合した状態で、位置決め突起
28の先端部をかしめ付けることにより、金属基板21
に対してリードフレームを位置決め固定するものであ
る。この位置決め固定状態において、各配線部24のパ
ッド24aの位置が各リード部29の延長線上に位置す
るように、各配線部24のパッド24aの位置が設定さ
れている。各配線部24のパッド24aと各リード部2
9とは、ボンディングワイヤ35で電気的に接続されて
いる。このボンディングワイヤ35としては、前述と同
じく、電流容量に合わせて適当な太さの金線或はアルミ
ニウム線を用いれば良い。
On the other hand, the plurality of lead portions 29 are integrated as a lead frame 31 by the frame portion 30 until the resin molding process is completed. Further, each lead portion 29 is connected by a tie bar 32 at an intermediate portion in order to prevent deformation during the manufacturing process. Also, the frame part 3
At 0, three fixing pieces 34 having fitting holes 33 (see FIG. 2) are formed corresponding to the three positioning protrusions 28. Then, the fitting hole 3 of the fixing piece portion 34
3 is fitted in the positioning protrusion 28, the front end of the positioning protrusion 28 is caulked, whereby the metal substrate 21
The lead frame is positioned and fixed with respect to. In this positionally fixed state, the position of the pad 24a of each wiring portion 24 is set such that the position of the pad 24a of each wiring portion 24 is located on the extension line of each lead portion 29. The pads 24a of each wiring part 24 and each lead part 2
9 is electrically connected by a bonding wire 35. As the bonding wire 35, a gold wire or an aluminum wire having an appropriate thickness according to the current capacity may be used, as described above.

【0017】以上説明した金属基板21,ICチップ2
5等の回路素子及びリード部29のボンディング部分
は、モールド樹脂36により樹脂モールドされ、この樹
脂モールド後に、リード部29と固定片部34の根元が
切断され、且つタイバー32が切除されて、ハイブリッ
ドICが完成される。このハイブリッドICは、放熱性
を高めるために、金属基板21の裏面側を樹脂モールド
せずに外部に露出させている。
The metal substrate 21 and the IC chip 2 described above
The circuit elements such as 5 and the bonding portion of the lead portion 29 are resin-molded with a molding resin 36, and after the resin molding, the roots of the lead portion 29 and the fixing piece portion 34 are cut, and the tie bar 32 is cut off. IC is completed. In this hybrid IC, the back side of the metal substrate 21 is exposed to the outside without resin molding in order to enhance heat dissipation.

【0018】次に、上記構成のハイブリッドICの製造
方法を具体的に説明する。予め、リードフレーム31を
打ち抜き形成する際に、同時に、フレーム部30に嵌合
孔33を有する固定片部34を形成しておく。更に、予
め、絶縁層23と配線部24が形成された金属基板21
に、裏面(絶縁層23が形成されていない面)側からパ
ンチング加工して位置決め突起28を形成する[図4
(a)参照]。この際、金属基板21の裏面側からパン
チ37を用いてパンチング加工することにより、金属基
板21の表面の絶縁層23や配線部24に傷が付かない
ようにする。
Next, a method of manufacturing the hybrid IC having the above structure will be specifically described. In advance, when the lead frame 31 is punched and formed, at the same time, the fixing piece portion 34 having the fitting hole 33 is formed in the frame portion 30. Further, the metal substrate 21 on which the insulating layer 23 and the wiring portion 24 are formed in advance.
Then, the positioning protrusion 28 is formed by punching from the back surface (the surface on which the insulating layer 23 is not formed) side [FIG.
(See (a)]. At this time, punching is performed from the back surface side of the metal substrate 21 using the punch 37 so that the insulating layer 23 and the wiring portion 24 on the surface of the metal substrate 21 are not scratched.

【0019】この後、図4(b)に示すように、金属基
板21の位置決め突起28をリードフレーム31の嵌合
孔33に嵌合して、位置決め突起28の先端部をかしめ
付けて、両者を位置決め固定する。この際、図1及び図
3に示すように、予め、一体に多数連結された各リード
フレーム31にそれぞれ金属基板21をかしめ付ける。
これにより、以後の工程を、量産性のある通常のモノリ
シックICの製造工程と同様の手順で能率良く行うこと
ができる。
After that, as shown in FIG. 4B, the positioning protrusion 28 of the metal substrate 21 is fitted into the fitting hole 33 of the lead frame 31, and the tip of the positioning protrusion 28 is caulked. Position and fix. At this time, as shown in FIGS. 1 and 3, the metal substrates 21 are respectively crimped to the lead frames 31 that are integrally connected in advance.
As a result, the subsequent steps can be efficiently performed in the same procedure as the manufacturing steps of a normal mass-produced monolithic IC.

【0020】次いで、図4(c)に示すように、ICチ
ップ25等の回路素子を金属基板21上に半田や銀ペー
スト等により固定した後、図4(d)に示すように、I
Cチップ25と配線部24との間及びリード部29と配
線部24との間をそれぞれボンディングワイヤ26,3
5により電気的に接続する。この後、この組立品をモー
ルド金型に収納して、図4(e)に示すように、金属基
板21,ICチップ25等の回路素子及びリード部29
のボンディング部分を、モールド樹脂36により樹脂モ
ールドした後、リード部29と固定片部34の根元を切
断すると共に、タイバー32を切除すれば、図4(f)
に示すようなハイブリッドICの製造が完了する。
Next, as shown in FIG. 4 (c), after fixing the circuit element such as the IC chip 25 on the metal substrate 21 with solder, silver paste or the like, as shown in FIG. 4 (d), I
Bonding wires 26 and 3 are provided between the C chip 25 and the wiring portion 24 and between the lead portion 29 and the wiring portion 24, respectively.
5 for electrical connection. Thereafter, this assembly is housed in a molding die, and as shown in FIG. 4E, the circuit element such as the metal substrate 21, the IC chip 25, and the lead portion 29.
4 (f) by cutting the roots of the lead portion 29 and the fixed piece portion 34 and cutting off the tie bar 32 after resin-molding the bonding portion of the above with the molding resin 36.
The manufacturing of the hybrid IC as shown in FIG.

【0021】以上説明した本実施例によれば、金属基板
21に形成した位置決め突起28を、リードフレーム3
1のフレーム部30に形成した固定片部34の嵌合孔3
3に嵌合した状態で、位置決め突起28の先端部をかし
め付けて、両者を位置決め固定するものであるから、両
者を位置決め治具を介さずに直接位置決め固定でき、従
来の位置決め治具による位置ずれ要因を取り除くことが
できる。この場合、金属基板21に対するリードフレー
ム31の位置決め精度は、嵌合孔33の位置精度と位置
決め突起28の位置精度や両者の半径差によって決まる
が、両者の位置精度はプレスの加工精度によって高精度
に決めることができ、且つ両者の半径差は例えば0.0
5mmもあれば十分に嵌合可能であるため、例えば誤差
±0.05mm以下という高精度の位置決めが可能とな
る。このため、樹脂モールド時に、金型へのリードフレ
ーム31のセットが常に位置ずれなく正確に行われるよ
うになり、成形不良が発生しなくなる。
According to this embodiment described above, the positioning protrusions 28 formed on the metal substrate 21 are attached to the lead frame 3
The fitting hole 3 of the fixed piece portion 34 formed in the frame portion 30 of No. 1
In the state in which the positioning projections 28 are fitted to each other, they are positioned and fixed by caulking the tip ends of the positioning projections 28. Therefore, both of them can be directly positioned and fixed without using a positioning jig. The shift factor can be removed. In this case, the positioning accuracy of the lead frame 31 with respect to the metal substrate 21 is determined by the positioning accuracy of the fitting hole 33, the positioning accuracy of the positioning protrusion 28, and the difference in radius between the two, but the positioning accuracy of both is highly accurate due to the processing accuracy of the press. And the radius difference between the two is, for example, 0.0
If the distance is 5 mm, the fitting can be sufficiently performed, so that the positioning can be performed with high accuracy, for example, an error of ± 0.05 mm or less. For this reason, the lead frame 31 is set in the mold accurately at all times during resin molding, and molding defects do not occur.

【0022】更に、上記かしめによるリードフレーム3
1の位置決め固定構造により、リード部29の固定と電
気的接続の各機能の役割分担が可能になり、リード部2
9の電気的接続方式として、接続信頼性が極めて高く且
つ高速ボンディングが可能でコストの安い“ワイヤボン
ディング”を利用することができる。しかも、ワイヤボ
ンディングを用いれば、その後の樹脂モールド工程での
170℃程度の温度では、接着部の強度低下や剥離の心
配が全く無くなって、リード部29の接続不良が発生し
なくなり、前述した成形不良防止効果と相俟って、製品
の歩留りを向上できる。しかも、かしめとワイヤボンデ
ィングによる組立は、従来の半田付けのようなフラック
ス洗浄が不要であり、組立工程がクリーンであるという
利点もある。
Further, the lead frame 3 by caulking as described above.
With the positioning and fixing structure of No. 1, it becomes possible to divide the roles of each function of fixing the lead portion 29 and electrical connection.
As the electrical connection method of No. 9, "wire bonding" which has extremely high connection reliability, high-speed bonding and low cost can be used. In addition, if wire bonding is used, at a temperature of about 170 ° C. in the subsequent resin molding process, there is no fear of the strength of the adhesive portion being peeled off or peeling, and the connection failure of the lead portion 29 will not occur, and the above-mentioned molding will be performed. Combined with the defect prevention effect, the product yield can be improved. Moreover, the assembly by caulking and wire bonding has an advantage that the flux cleaning unlike the conventional soldering is unnecessary and the assembly process is clean.

【0023】その上、予め、一体に多数連結された各リ
ードフレーム31にそれぞれ金属基板21をかしめ付け
た状態で、ICチップ25等の回路素子の実装とワイヤ
ボンディングを行うことができ、リード部29の半田付
けを廃止できるので、量産性のある通常のモノリシック
ICと同様の組立が可能となり、量産効果によるコスト
ダウンも可能である。これに対し、従来の半田付け法で
は、ICチップのワイヤボンディング時の熱的影響を考
慮して、リード部の半田付けを最後に行う必要があるの
で、一般のモノリシックICの製造工程との互換性はな
く、量産性が悪いという欠点がある。
In addition, the circuit board such as the IC chip 25 can be mounted and the wire bonding can be performed while the metal substrate 21 is crimped to each of the lead frames 31 that are integrally connected in advance. Since the soldering of 29 can be eliminated, the same assembly as a normal monolithic IC having mass productivity can be performed, and the cost can be reduced by the mass production effect. On the other hand, in the conventional soldering method, it is necessary to solder the lead part lastly in consideration of the thermal effect at the time of wire bonding of the IC chip, and therefore, it is compatible with the manufacturing process of a general monolithic IC. However, it has the disadvantage of poor productivity and poor mass productivity.

【0024】また、本実施例では、各配線部24のパッ
ド24aの位置が各リード部29の延長線上に位置する
ように構成されているので、ワイヤボンディング時にワ
ーク又はボンディングヘッドを回転させずに、リード部
29をワイヤボンディングすることができ、ワイヤボン
ディングを能率良く行うことができる。但し、本発明
は、上記構成に限定されず、配線スペース上の制約か
ら、各配線部24のパッド24aの位置を各リード部2
9の延長線からずらした構成としても良く、この場合で
も、本発明の所期の目的は十分に達成できる。
Further, in this embodiment, since the position of the pad 24a of each wiring portion 24 is located on the extension line of each lead portion 29, the work or the bonding head is not rotated during wire bonding. The lead portion 29 can be wire-bonded, and the wire bonding can be efficiently performed. However, the present invention is not limited to the above configuration, and the position of the pad 24a of each wiring portion 24 is set to the position of each lead portion 2 due to restrictions on the wiring space.
The configuration may be shifted from the extension line of 9, and even in this case, the intended purpose of the present invention can be sufficiently achieved.

【0025】尚、本発明は、位置決め突起28(嵌合孔
33)の個数は3個に限定されず、2個若しくは4個以
上であっても良く、また、リードフレーム31と同じ
く、金属基板21も多数連結して、樹脂モールド後に1
個ずつ金属基板21を分断するようにしても良い。ま
た、本実施例では、ハイブリッドICの放熱性を高める
ために、金属基板21の裏面側を樹脂モールドせずに外
部に露出させているが、発熱量の少ないハイブリッドI
Cについては、金属基板の裏面側も樹脂モールドしても
良い。
In the present invention, the number of the positioning projections 28 (fitting holes 33) is not limited to three, and may be two or four or more, and, like the lead frame 31, a metal substrate. 21 are also connected, and 1 after resin molding
The metal substrate 21 may be divided into individual pieces. Further, in this embodiment, in order to improve the heat dissipation of the hybrid IC, the back surface side of the metal substrate 21 is exposed to the outside without being resin-molded.
As for C, the back side of the metal substrate may be resin-molded.

【0026】その他、本発明は、上記実施例のようなS
IPタイプのハイブリッドICに限らず、DIP(Du
al Inline Package)タイプのハイブ
リッドICにも適用して実施できる等、要旨を逸脱しな
い範囲内で種々変更して実施できることは言うまでもな
い。
In addition, in the present invention, S as in the above embodiment is used.
Not only IP type hybrid ICs, but also DIP (Du
It goes without saying that various modifications can be made without departing from the scope of the invention, such as application to a hybrid IC of an al Inline Package) type.

【0027】[0027]

【発明の効果】以上の説明から明らかなように、本発明
によれば、金属基板に形成した位置決め突起を、リード
フレームのフレーム部に形成した固定片部の嵌合孔に嵌
合した状態で、位置決め突起の先端部をかしめ付けて、
両者を位置決め固定するものであるから、両者を位置決
め治具を介さずに直接位置決め固定できて、位置決め精
度を高精度化でき、樹脂モールド時に、金型へのリード
フレームのセットが常に位置ずれなく正確に行われるよ
うになり、成形不良が発生しなくなる。
As is apparent from the above description, according to the present invention, the positioning protrusion formed on the metal substrate is fitted in the fitting hole of the fixing piece formed on the frame portion of the lead frame. , Caulk the tip of the positioning protrusion,
Since both are positioned and fixed, they can be directly positioned and fixed without a positioning jig, and the positioning accuracy can be improved, and the lead frame set in the mold is always aligned during resin molding. Accurately performed, no defective molding occurs.

【0028】しかも、かしめ構造によって、リード部の
固定と電気的接続の各機能の役割分担が可能になるの
で、リード部の電気的接続方式として、接続信頼性が極
めて高く且つ高速ボンディングが可能でコストの安い
“ワイヤボンディング”を利用することができて、樹脂
モールド工程等の熱処理工程での接続部の強度低下や剥
離の心配が全く無くなり、リード部の接続不良が発生し
なくなる。しかも、かしめとワイヤボンディングによる
組立は、従来の半田付けのようなフラックス洗浄が不要
であり、組立工程がクリーンであるという利点もある。
Moreover, since the caulking structure allows the functions of fixing the lead portion and the electrical connection to be shared, the connection reliability of the lead portion is extremely high and high-speed bonding is possible. Since "wire bonding", which is low in cost, can be used, there is no fear of strength deterioration or peeling of the connection portion during the heat treatment process such as the resin molding process, and the connection failure of the lead portion does not occur. Moreover, the assembly by caulking and wire bonding has an advantage that the flux cleaning unlike the conventional soldering is unnecessary and the assembly process is clean.

【0029】その上、予め、一体に多数連結された各リ
ードフレームにそれぞれ金属基板をかしめ付けた状態
で、回路素子の実装とワイヤボンディングを行うことが
でき、リード部の半田付けを廃止できるので、量産性の
ある通常のモノリシックICと同様の組立が可能とな
り、量産効果によるコストダウンも可能である。
In addition, the circuit element can be mounted and the wire bonding can be performed in advance in the state where the metal substrates are respectively caulked to the lead frames that are integrally connected in advance, and the soldering of the lead portions can be eliminated. It is possible to assemble in the same manner as a mass-produced normal monolithic IC, and it is possible to reduce the cost due to the mass-production effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例におけるワイヤボンディング
工程時(樹脂モールド前)の状態を示す拡大平面図
FIG. 1 is an enlarged plan view showing a state during a wire bonding process (before resin molding) according to an embodiment of the present invention.

【図2】図1のII−II線に沿って示す拡大断面図FIG. 2 is an enlarged sectional view taken along line II-II in FIG.

【図3】多数連結されたリードフレームに多数の金属基
板をかしめ付けた状態を示す拡大側面図
FIG. 3 is an enlarged side view showing a state in which a large number of metal substrates are caulked to a large number of connected lead frames.

【図4】(a)〜(f)はそれぞれハイブリッドICの
製造手順を説明する工程図
FIG. 4A to FIG. 4F are process diagrams for explaining a hybrid IC manufacturing procedure.

【図5】従来例を説明するための図1相当図FIG. 5 is a view corresponding to FIG. 1 for explaining a conventional example.

【図6】図5のVI−VI線に沿って示す拡大断面図6 is an enlarged cross-sectional view taken along line VI-VI in FIG.

【符号の説明】[Explanation of symbols]

21…金属基板、22…金属板、23…絶縁層、24…
配線部、25…ICチップ(回路素子)、26…ボンデ
ィングワイヤ、28…位置決め突起、29…リード部、
30…フレーム部、31…リードフレーム、32…ダイ
バ、33…嵌合孔、34…固定片部、35…ボンディン
グワイヤ、36…モールド樹脂。
21 ... Metal substrate, 22 ... Metal plate, 23 ... Insulating layer, 24 ...
Wiring portion, 25 ... IC chip (circuit element), 26 ... Bonding wire, 28 ... Positioning protrusion, 29 ... Lead portion,
30 ... Frame part, 31 ... Lead frame, 32 ... Diver, 33 ... Fitting hole, 34 ... Fixing piece part, 35 ... Bonding wire, 36 ... Mold resin.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 加藤 初幸 愛知県刈谷市昭和町1丁目1番地 日本電 装株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hatsuko Kato 1-1-1, Showamachi, Kariya city, Aichi Nihon Denso Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ハイブリッドICの金属基板に対してリ
ードフレームを位置決め状態に固定するものであって、 前記金属基板に形成された位置決め突起と、 前記リードフレームのフレーム部に形成され、前記位置
決め突起に嵌め込まれる嵌合孔を有する固定片部とを備
え、 前記位置決め突起を前記固定片部の嵌合孔に嵌合した状
態で、前記位置決め突起の先端部をかしめ付けることに
より、前記金属基板に対してリードフレームを位置決め
固定するように構成したことを特徴とするハイブリッド
ICのリードフレームの位置決め構造。
1. A positioning means for fixing a lead frame to a metal substrate of a hybrid IC in a positioning state, wherein the positioning protrusion is formed on the metal substrate, and the positioning protrusion is formed on a frame portion of the lead frame. And a fixed piece portion having a fitting hole to be fitted to the metal substrate, wherein the positioning projection is fitted into the fitting hole of the fixed piece portion, and by caulking the tip of the positioning projection, A lead IC positioning structure for a hybrid IC, wherein the lead frame is positioned and fixed to the lead frame.
【請求項2】 金属基板に形成した位置決め突起を、リ
ードフレームのフレーム部に形成した固定片部の嵌合孔
に嵌合して、前記位置決め突起の先端部をかしめ付ける
ことにより、前記金属基板に対してリードフレームを位
置決め固定した後、前記金属基板上に回路素子を実装す
ると共に、前記リードフレームのリード部と前記金属基
板とをワイヤボンディングで電気的に接続し、この後、
全体を樹脂モールドした後、前記リードフレームのリー
ド部と固定片部の根元を切断して、ハイブリッドICを
製造するハイブリッドICの製造方法。
2. The metal substrate by fitting a positioning protrusion formed on a metal substrate into a fitting hole of a fixing piece portion formed on a frame portion of a lead frame, and caulking a tip portion of the positioning protrusion. After positioning and fixing the lead frame with respect to, while mounting the circuit element on the metal substrate, electrically connecting the lead portion of the lead frame and the metal substrate by wire bonding, after this,
A method of manufacturing a hybrid IC, comprising manufacturing the hybrid IC by resin-molding the whole and then cutting the lead portions of the lead frame and the roots of the fixing pieces.
JP8066293A 1993-04-07 1993-04-07 Hybrid IC lead frame positioning structure and hybrid IC manufacturing method Expired - Fee Related JP3173215B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8066293A JP3173215B2 (en) 1993-04-07 1993-04-07 Hybrid IC lead frame positioning structure and hybrid IC manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8066293A JP3173215B2 (en) 1993-04-07 1993-04-07 Hybrid IC lead frame positioning structure and hybrid IC manufacturing method

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012731A (en) * 2005-06-29 2007-01-18 Sanyo Electric Co Ltd Circuit device and its manufacturing method
WO2007147470A1 (en) * 2006-06-21 2007-12-27 Hansatronic Gmbh Method for producing an injection-moulded part comprising an integrated flexible printed circuit board
JP2008124136A (en) * 2006-11-09 2008-05-29 Denso Corp Semiconductor package, and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007012731A (en) * 2005-06-29 2007-01-18 Sanyo Electric Co Ltd Circuit device and its manufacturing method
JP4610426B2 (en) * 2005-06-29 2011-01-12 三洋電機株式会社 Circuit device manufacturing method
WO2007147470A1 (en) * 2006-06-21 2007-12-27 Hansatronic Gmbh Method for producing an injection-moulded part comprising an integrated flexible printed circuit board
JP2008124136A (en) * 2006-11-09 2008-05-29 Denso Corp Semiconductor package, and manufacturing method thereof

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