JPH06295941A - Wire bonding device - Google Patents
Wire bonding deviceInfo
- Publication number
- JPH06295941A JPH06295941A JP5081675A JP8167593A JPH06295941A JP H06295941 A JPH06295941 A JP H06295941A JP 5081675 A JP5081675 A JP 5081675A JP 8167593 A JP8167593 A JP 8167593A JP H06295941 A JPH06295941 A JP H06295941A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- wire
- wire bonding
- piezoelectric element
- electrode pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/78822—Rotational mechanism
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はワイヤボンディング装置
に関するものであり、詳細には、半導体装置内の半導体
ペレットとリードとを金属細線にて電気的接続するため
のワイヤボンディング装置における金属細線の接合力強
化並びにキャピラリの偏摩耗防止手段を提供するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding apparatus, and more particularly, to bonding a metal wire in a wire bonding apparatus for electrically connecting a semiconductor pellet and a lead in a semiconductor device with a metal wire. (EN) A means for strengthening force and preventing uneven wear of a capillary.
【０００２】[0002]
【従来の技術】半導体装置内の半導体ペレットの電極パ
ッドとリードの遊端部とは、金線あるいはアルミ線等の
金属細線によって電気的に接続されており、この金属細
線の接続工程を図２を参照しながら説明する。2. Description of the Related Art An electrode pad of a semiconductor pellet and a free end of a lead in a semiconductor device are electrically connected to each other by a fine metal wire such as a gold wire or an aluminum wire. Will be described with reference to.
【０００３】同図において（１５）はワイヤボンディン
グ装置で、アーム（６）の一端に超音波振動子（７）を
装着し、その他端に金属細線（２）の送り出し、圧着手
段としてキャピラリ（１）を垂設している。キャピラリ
（１）は、軸心部に金属細線（２）の挿通孔（１Ａ）を
穿設し、金属細線（２）が引出される挿通孔（１Ａ）の
下端部（１Ｅ）を円錐状に拡径することによって、円環
状の加圧面に形成している。（３）は上記キャピラリ
（１）の下方に配置されたリードフレームで、ペレット
マウント部（３Ａ）とリード（３Ｂ）とが外周縁部で連
結されている（図示省略）。（４）は半田（５）によっ
てペレットマウント部（３Ａ）に接続固定された半導体
ペレットで、上面に被ボンディング面である電極パッド
（４Ａ）が形成されている。In the figure, (15) is a wire bonding apparatus, in which an ultrasonic transducer (7) is attached to one end of an arm (6), a thin metal wire (2) is sent out to the other end, and a capillary (1) is used as a crimping means. ) Is installed vertically. The capillary (1) has an insertion hole (1A) for the metal thin wire (2) at the center of the axis, and the lower end (1E) of the insertion hole (1A) through which the metal thin wire (2) is drawn out has a conical shape. By expanding the diameter, it is formed into an annular pressing surface. Reference numeral (3) is a lead frame arranged below the capillary (1), and the pellet mount portion (3A) and the lead (3B) are connected at an outer peripheral edge portion (not shown). (4) is a semiconductor pellet which is connected and fixed to the pellet mount portion (3A) by solder (5), and an electrode pad (4A) which is a surface to be bonded is formed on the upper surface.
【０００４】この電極パッド（４Ａ）と上記リード（３
Ｂ）とは、下記のような要領で金属細線（２）によって
電気的に接続される。先ず、図２（Ａ）に示すように、
キャピラリ（１）の挿通孔（１Ａ）から下方に引き出さ
れた金属細線（２）の先端部にスパーク放電等の成形手
段を利用して金属球（２Ａ）を形成する。この後、キャ
ピラリ（１）が下降し、金属球（２Ａ）を半導体ペレッ
ト（４）の上面に形成されている電極パッド（４Ａ）に
押し付ける。キャピラリ（１）に所定圧力（Ｐ）を印加
しながら金属球（２Ａ）及び電極パッド（４Ａ）に超音
波振動子（７）から超音波振動（Ｔ）を伝達する。The electrode pad (4A) and the lead (3)
B) is electrically connected by a thin metal wire (2) in the following manner. First, as shown in FIG.
A metal sphere (2A) is formed at the tip of the thin metal wire (2) drawn downward from the insertion hole (1A) of the capillary (1) using a forming means such as spark discharge. After this, the capillary (1) descends and presses the metal sphere (2A) against the electrode pad (4A) formed on the upper surface of the semiconductor pellet (4). While applying a predetermined pressure (P) to the capillary (1), ultrasonic vibration (T) is transmitted from the ultrasonic vibrator (7) to the metal sphere (2A) and the electrode pad (4A).
【０００５】即ち、図２（Ｃ）に示すように、金属球
（２Ａ）と電極パッド（４Ａ）に、キャピラリ（１）の
軸線方向に沿う押圧力（Ｐ）の作用下に、この押圧力
（Ｐ）と直交方向の超音波振動（Ｔ）を伝達させる。垂
直方向の押圧力（Ｐ）と水平方向の振動（Ｔ）との合力
が金属球（２Ａ）に印加されることによって金属球（２
Ａ）と電極パッド（４Ａ）との間に摩擦熱が発生する。
この結果、金属球（２Ａ）は熔融して電極パッド（４
Ａ）に接続される。That is, as shown in FIG. 2C, the pressing force (P) along the axial direction of the capillary (1) acts on the metal sphere (2A) and the electrode pad (4A). Ultrasonic vibration (T) orthogonal to (P) is transmitted. The resultant force of the pressing force (P) in the vertical direction and the vibration (T) in the horizontal direction is applied to the metal ball (2A), so that
Friction heat is generated between A) and the electrode pad (4A).
As a result, the metal balls (2A) are melted and the electrode pads (4
A) is connected.
【０００６】次に、キャピラリ（１）をリード（３Ｂ）
側に移動して、挿通孔（１Ａ）から金属細線（２）を引
出し、図２（Ｂ）に示すように、キャピラリ（１）の下
端（１Ｅ）から引出された金属細線（２）をリード（３
Ｂ）に押し付ける。そして、キャピラリ（１）から金属
細線（２）に超音波振動を加え、金属細線（２）を接続
する。最後に、キャピラリ（１）を少し上昇させ、超音
波振動によって弱くなった金属細線（２）の部分を引切
る。このようにして、電極パッド（４Ａ）とリード（３
Ｂ）とが金属細線（２）によって電気的に接続される。Next, the capillary (1) is lead (3B).
Side, and pull out the thin metal wire (2) from the insertion hole (1A), and lead the thin metal wire (2) pulled out from the lower end (1E) of the capillary (1) as shown in FIG. 2 (B). (3
Press on B). Then, ultrasonic vibration is applied from the capillary (1) to the thin metal wire (2) to connect the thin metal wire (2). Finally, the capillary (1) is slightly raised to cut off the portion of the thin metal wire (2) weakened by ultrasonic vibration. In this way, the electrode pad (4A) and the lead (3
B) is electrically connected to the metal wire (2).
【０００７】[0007]
【発明が解決しようとする課題】図２（Ｃ）に示すよう
に、垂直方向の押圧力（Ｐ）と水平方向の超音波振動
（Ｔ）との合力を金属細線（２）の先端部分に形成され
た金属球（２Ａ）及びその下方に位置する電極パッド
（４Ａ）に作用させ、両者の間に発生する摩擦熱で金属
球（２Ａ）を熔融させ金属細線（２）の先端部を電極パ
ッド（４Ａ）に接続しているが、このボンディング方式
では、キャピラリ（１）の下端（１Ｅ）に、垂直方向の
押圧力（Ｐ）と超音波振動子（７）からの水平方向の超
音波振動（Ｔ）が伝達される。この際、キャピラリ
（１）の下端部（１Ｅ）が円環状の加圧面に形成されて
いるため、金属球（２Ａ）とその下方に位置している電
極パッド（４Ａ）の間には、図２（Ｄ）に斜線を付した
部分として示すような振幅（Ｌ）を有する長円状の有効
押圧領域（Ｒ0）が確保される。As shown in FIG. 2C, the resultant force of the vertical pressing force (P) and the horizontal ultrasonic vibration (T) is applied to the tip of the metal thin wire (2). The formed metal ball (2A) and the electrode pad (4A) located below it are made to act, and the frictional heat generated between the two melts the metal ball (2A) to cause the tip of the thin metal wire (2) to become an electrode. Although connected to the pad (4A), in this bonding method, a vertical pressing force (P) and a horizontal ultrasonic wave from the ultrasonic transducer (7) are applied to the lower end (1E) of the capillary (1). Vibration (T) is transmitted. At this time, since the lower end portion (1E) of the capillary (1) is formed on the annular pressing surface, the gap between the metal sphere (2A) and the electrode pad (4A) located therebelow may be An oblong effective pressing region (R0) having an amplitude (L) as shown by the hatched portion in 2 (D) is secured.
【０００８】キャピラリ（１）の下端部（１Ｅ）の内側
の領域、即ち、金属細線（２）の挿通域（Ｒ1）と外側
の領域、即ち、金属球（２Ａ）の露出域（Ｒ2）で、上
記有効押圧領域（Ｒ0）よりも押圧力（Ｐ）の垂直方向
分力が弱くなり、水平方向の超音波振動の振幅（Ｌ）は
同一でも押圧力（Ｐ）の分力が減少した分だけ、摩擦熱
の発生量が減少してしまう。また、振幅（Ｌ）を有する
超音波振動（Ｔ）の方向変換点（Ｐ1）で、キャピラリ
（１）が瞬間的に停止するため、押圧力（Ｐ）の大きさ
は一定に保持されていてもキャピラリ（１）の振動速度
が一様でなくなり、摺接抵抗が周期的に変化してしま
う。結果的に、摩擦力の発生条件が一定に維持されず、
金属球（２Ａ）と電極パッド（４Ａ）との接合強度が低
下し、絶縁不良等の品質欠陥が引起される。In the region inside the lower end portion (1E) of the capillary (1), that is, in the insertion region (R1) of the thin metal wire (2) and in the outer region, that is, in the exposed region (R2) of the metal ball (2A). The vertical component of the pressing force (P) becomes weaker than the effective pressing area (R0), and the component of the pressing force (P) decreases even if the amplitude (L) of ultrasonic vibration in the horizontal direction is the same. However, the amount of frictional heat generated is reduced. Further, since the capillary (1) is momentarily stopped at the direction change point (P1) of the ultrasonic vibration (T) having the amplitude (L), the magnitude of the pressing force (P) is kept constant. However, the vibration speed of the capillary (1) is not uniform, and the sliding contact resistance changes periodically. As a result, the condition for generating frictional force is not maintained constant,
The bonding strength between the metal sphere (2A) and the electrode pad (4A) is reduced, causing quality defects such as insulation failure.
【０００９】更に、金属細線（２）をリード（３Ｂ）に
圧着する際に、キャピラリ（１）の下端部（１Ｅ）に、
上記摺接抵抗の不均一に起因する偏摩耗が起こる。一
方。電極パッド（４Ａ）側では、上記水平方向の超音波
振動によって押圧力（Ｐ）の作用下にキャピラリ（１）
が振幅（Ｌ）で直線運動するため、押しつぶされた金属
球（２Ａ）が長円偏平状に変形し、その一部分が電極パ
ッド（４Ａ）かはみ出すことによって配線に短絡等の品
質欠陥を発生させる原因となる。Furthermore, when the thin metal wire (2) is pressure-bonded to the lead (3B), it is attached to the lower end (1E) of the capillary (1).
Uneven wear due to the non-uniform sliding contact resistance occurs. on the other hand. On the electrode pad (4A) side, the capillary (1) is subjected to the pressing force (P) by the horizontal ultrasonic vibration.
Moves linearly with an amplitude (L), the crushed metal sphere (2A) deforms into an oblong flat shape, and a part of it protrudes from the electrode pad (4A), causing a quality defect such as a short circuit in the wiring. Cause.
【００１０】[0010]
【００１１】上記課題の解決手段として本発明は、キャ
ピラリに穿設した挿通孔から下方に引出された金属細線
の先端部分に形成した金属球をキャピラリの下端面で被
ボンディング面に押し付け、加圧・振動させて金属細線
を被ボンディング面に接続する装置において、上記キャ
ピラリの支持アームの先端部分に、当該キャピラリの下
端面に円周方向に沿う往復円運動を発生させる加振構体
を装着したことを特徴とするワイヤボンディング装置を
提供するものである。According to the present invention, as a means for solving the above-mentioned problems, a metal ball formed at the tip of a thin metal wire drawn downward from an insertion hole formed in a capillary is pressed against the surface to be bonded by the lower end surface of the capillary and pressed. In a device for vibrating and connecting a thin metal wire to a surface to be bonded, a vibrating structure that causes a reciprocating circular motion along the circumferential direction on the lower end surface of the capillary is attached to the tip end portion of the supporting arm of the capillary. The present invention provides a wire bonding device.
【００１２】加振構体は、上記支持アームの先端部分に
固設された圧電素子と、この圧電素子からキャピラリの
上端側胴部に向って延びる直線往復動型の押圧レバー
と、上記キャピラリの上端から半径方向に向って突出
し、上記押圧レバーの先端部分と係合し、直線状の往復
動ストロークをキャピラリの円周方向に沿う往復円運動
に変換する受圧部材から構成する。The vibrating structure includes a piezoelectric element fixed to the tip of the support arm, a linear reciprocating pressure lever extending from the piezoelectric element toward the upper body of the capillary, and the upper end of the capillary. From a pressure receiving member that protrudes in the radial direction from, engages with the tip end portion of the pressing lever, and converts a linear reciprocating stroke into a reciprocating circular movement along the circumferential direction of the capillary.
【００１３】[0013]
【作用】圧電素子による押圧レバーの直線往復動を、キ
ャピラリの上端から半径方向に向って突出する受圧部材
で受け、往復円運動に変換してキャピラリの下端押圧面
に伝達する。キャピラリが金属細線の軸心を中心として
円周方向に往復運動することによって、金属球に作用す
る押圧力と摺動抵抗を一定化し、電極パッドからの金属
球のはみ出し並びにキャピラリの下端面の偏摩耗を防止
する。The linear reciprocating motion of the pressing lever by the piezoelectric element is received by the pressure receiving member protruding in the radial direction from the upper end of the capillary, converted into a reciprocating circular motion and transmitted to the lower end pressing face of the capillary. The reciprocating motion of the capillary in the circumferential direction around the axis of the thin metal wire makes the pressing force and sliding resistance acting on the metal ball constant, so that the metal ball sticks out from the electrode pad and the lower end surface of the capillary is deviated. Prevent wear.
【００１４】[0014]
【実施例】以下、図１を参照しながら本発明装置の実施
例を説明する。尚、以下の記述において、従来技術を示
す図２と同一の構成部材は、同一の参照番号で表示し、
重複事項に関しては説明を省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the device of the present invention will be described below with reference to FIG. In the following description, the same components as those in FIG. 2 showing the prior art are designated by the same reference numerals,
Description of duplicate items is omitted.
【００１５】本発明に係るワイヤボンディング装置（２
０）は、キャピラリ（１）を上下動可能に支持するアー
ム（６）の先端部分に、このキャピラリ（１）の下端面
（１Ｅ）に円周方向（Ｒ）に沿う往復回転運動を発生さ
せる加振構体（２１）を装着することによって構成され
ている。The wire bonding apparatus (2
0) causes a reciprocating rotary motion along the circumferential direction (R) at the lower end surface (1E) of the capillary (1) at the tip of the arm (6) that supports the capillary (1) so that it can move up and down. It is configured by mounting a vibrating structure (21).
【００１６】加振構体（２１）は、キャピラリ支持アー
ム（６）の先端部分に固設された圧電素子（８）と、こ
の圧電素子（８）からキャピラリ（１）の上端側胴部に
向って接線を形成するように延びる押圧レバー（９）
と、上記キャピラリ（１）の上端側胴部から半径方向に
向って突出し、上記押圧レバー（９）の先端部分と係合
するレバー状の受圧部材（１０）から構成されている。
支持アーム（６）とキャピラリ（１）の間には押圧力
（Ｐ）の作用時にキャピラリ（１）を回転可能に支持す
る目的でマイクロベアリング（１１）が配設されてい
る。又、支持アーム（６）の先端部上面にキャピラリ
（１）の上端面を被嵌するように断面逆Ｕ字状係止部材
（２２）を固定すると共に、その係止面とキャピラリ上
端面との間に同極一対の磁石（２３）（２３）を上下に
重ねて配設し、キャピラリ（１）の上端面を磁石（２
３）の反発力にて非接触に係止する。The vibrating structure (21) is provided with a piezoelectric element (8) fixed to the tip of the capillary support arm (6), and from this piezoelectric element (8) to the upper body of the capillary (1). Lever extending so as to form a tangent line (9)
And a lever-shaped pressure receiving member (10) that projects in the radial direction from the upper body portion of the capillary (1) and engages with the tip portion of the pressing lever (9).
A micro bearing (11) is provided between the support arm (6) and the capillary (1) for the purpose of rotatably supporting the capillary (1) when a pressing force (P) is applied. A locking member (22) having an inverted U-shaped cross section is fixed so that the upper end surface of the capillary (1) is fitted on the upper end surface of the support arm (6), and the locking surface and the upper end surface of the capillary are A pair of magnets (23) (23) of the same polarity are vertically stacked between the two, and the upper end surface of the capillary (1) is attached to the magnet (2).
3) Non-contact locking with repulsive force.
【００１７】上記構成において、金属細線（２）の先端
に金属球（２Ａ）を形成した後、支持アーム（６）毎、
下降させると、キャピラリ（１）が上端面を磁石（２
３）（２３）によって非接触を保持しつつ係止部材（２
２）により係止されて電極パッド（４Ａ）に向って下降
し、金属球（２Ａ）を半導体ペレット（４）の上面に形
成されている電極パッド（４Ａ）に押し付ける。そこ
で、圧電素子（８）で発生した直線往復運動を押圧レバ
ー（９）及び受圧部材（１０）を介してキャピラリ
（１）の円周方向に沿う往復円運動（Ｒ）に変換しなが
ら金属球（２Ａ）に押圧力（Ｐ）を作用させる。キャピ
ラリ（１）が金属細線（２）の軸心を中心として円周方
向に往復円運動（Ｒ）することによってキャピラリ
（１）の下端面（１Ｅ）は押圧力（Ｐ）の作用下に同一
位置で回動し、金属球（２Ａ）を摺動抵抗による摩擦熱
で熔融させる。In the above structure, after forming the metal ball (2A) at the tip of the thin metal wire (2), each supporting arm (6) is
When lowered, the capillary (1) will move the upper end face to the magnet (2
3) The locking member (2
It is locked by 2) and descends toward the electrode pad (4A), and the metal ball (2A) is pressed against the electrode pad (4A) formed on the upper surface of the semiconductor pellet (4). Therefore, the linear reciprocating motion generated by the piezoelectric element (8) is converted into a reciprocating circular motion (R) along the circumferential direction of the capillary (1) via the pressing lever (9) and the pressure receiving member (10) while the metal ball is being moved. A pressing force (P) is applied to (2A). The lower end surface (1E) of the capillary (1) is the same under the action of the pressing force (P) because the capillary (1) reciprocates circularly (R) in the circumferential direction around the axis of the thin metal wire (2). The metal ball (2A) is rotated at a position to be melted by frictional heat due to sliding resistance.
【００１８】この結果、金属細線（２）と電極パッド
（４Ａ）が十分な位置決め精度を保持した状態で強固に
接合される。As a result, the thin metal wire (2) and the electrode pad (4A) are firmly joined while maintaining sufficient positioning accuracy.
【００１９】[0019]
【発明の効果】本発明装置（２０）を使用してワイヤボ
ンディングを実行すると、キャピラリ（１）の下端面
（１Ｅ）に同一位置で円運動を繰返させながら押圧力
（Ｐ）を作用させることによって、電極パッド（４Ａ）
の上面からの金属球（２Ａ）のはみ出しが防止される。
また、従来型のワイヤボンディング装置（１５）で問題
とされていた往復直線運動によるキャピラリ（１）の下
端面（１Ｅ）の偏摩耗、並びにこれに起因する不均一加
圧が抑制され、金属細線（２）と、電極パッド（４Ａ）
及びリード（３Ｂ）との接合強度が大幅に増大する。結
果的に、接続不良に起因する不良品の発生が減少し、ワ
イヤボンディング装置（２０）の耐久性も向上する。When wire bonding is performed using the device (20) of the present invention, the pressing force (P) is applied to the lower end surface (1E) of the capillary (1) while repeating the circular motion at the same position. Depending on the electrode pad (4A)
The metal sphere (2A) is prevented from protruding from the upper surface of the.
In addition, uneven wear of the lower end surface (1E) of the capillary (1) due to reciprocating linear motion, which has been a problem in the conventional wire bonding apparatus (15), and uneven pressure due to this are suppressed, and the thin metal wire is suppressed. (2) and electrode pad (4A)
Also, the bonding strength with the lead (3B) is significantly increased. As a result, the occurrence of defective products due to poor connection is reduced, and the durability of the wire bonding device (20) is also improved.
【図１】（Ａ）は本発明に係るワイヤボンディング装置
の斜視図である。（Ｂ）はその要部縦断面図である。
（Ｃ）はキャピラリの下端部の往復円運動方向と金属球
の相対位置を説明する部分横断面図である。FIG. 1A is a perspective view of a wire bonding apparatus according to the present invention. (B) is a longitudinal cross-sectional view of the relevant part.
(C) is a partial cross-sectional view for explaining the reciprocal circular movement direction of the lower end of the capillary and the relative position of the metal ball.
【図２】（Ａ）は従来型ワイヤボンディング装置の正面
図である。（Ｂ）はその作動状態を説明する斜視図であ
る。（Ｃ）はキャピラリの下端部の縦断面図である。
（Ｄ）は従来型キャピラリの下端部の往復直線運動方向
と、金属球の相対位置を説明する部分横断面図である。FIG. 2A is a front view of a conventional wire bonding apparatus. (B) is a perspective view explaining the operating state. (C) is a vertical cross-sectional view of the lower end portion of the capillary.
(D) is a partial transverse cross-sectional view for explaining the reciprocal linear movement direction of the lower end of the conventional capillary and the relative position of the metal ball.
１ キャピラリ １Ｅ キャピラリの下端部 ２ 金属細線 ２Ａ 金属球 ３Ｂ リード ４Ａ 電極パッド ６ 支持アーム ８ 圧電素子 ９ 押圧レバー １０ 受圧レバー ２０ ワイヤボンディング装置 ２１ 加振構体 Ｐ 押圧力 Ｒ キャピラリの往復円運動方向 1 Capillary 1E Lower end of capillary 2 Metal fine wire 2A Metal sphere 3B Lead 4A Electrode pad 6 Support arm 8 Piezoelectric element 9 Push lever 10 Pressure receiving lever 20 Wire bonding device 21 Exciting structure P Push force R Direction of circular movement of capillary
Claims (2)
通孔から下方に引出された金属細線の先端部分に金属球
を形成し、この金属球をキャピラリの下端面で被ボンデ
ィング面に押し付け、加圧・振動させて金属細線を被ボ
ンディング面に電気的接続する装置において、 上記キャピラリを円周方向に往復回転動させる加振構体
を装着したことを特徴とするワイヤボンディング装置。1. A metal sphere is formed at a tip portion of a thin metal wire drawn downward from a through hole of a capillary supported by a support arm, and the metal sphere is pressed against a surface to be bonded by a lower end surface of the capillary and pressed. A device for electrically connecting a thin metal wire to a surface to be bonded by vibrating, wherein a vibrating structure for reciprocally rotating the capillary in a circumferential direction is attached to the wire bonding device.
ームの先端部分に固設された圧電素子と、この圧電素子
からキャピラリの上端側胴部に向って延びる可動押圧レ
バーと、上記キャピラリの上端から半径方向に向って突
出し、上記可動押圧レバーの先端部分と係合して直線状
の往復動ストロークを円周方向に沿う往復円運動に変換
する受圧部材から構成したことを特徴とするワイヤボン
ディング装置。2. A vibrating structure according to claim 1, a piezoelectric element fixed to a tip portion of the support arm, a movable pressing lever extending from the piezoelectric element toward an upper end side body of the capillary, and It is composed of a pressure receiving member which projects from the upper end of the capillary in the radial direction and engages with the tip portion of the movable pressing lever to convert a linear reciprocating stroke into a reciprocating circular movement along the circumferential direction. Wire bonding equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5081675A JPH06295941A (en) | 1993-04-08 | 1993-04-08 | Wire bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5081675A JPH06295941A (en) | 1993-04-08 | 1993-04-08 | Wire bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06295941A true JPH06295941A (en) | 1994-10-21 |
Family
ID=13752933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5081675A Pending JPH06295941A (en) | 1993-04-08 | 1993-04-08 | Wire bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06295941A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010095490A1 (en) * | 2009-02-23 | 2010-08-26 | 株式会社新川 | Method for manufacturing semiconductor device, and bonding apparatus |
| WO2014021141A1 (en) * | 2012-08-03 | 2014-02-06 | 株式会社カイジョー | Bonding device |
| CN113539906A (en) * | 2021-07-26 | 2021-10-22 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Bonding head system and bonding machine |
-
1993
- 1993-04-08 JP JP5081675A patent/JPH06295941A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010095490A1 (en) * | 2009-02-23 | 2010-08-26 | 株式会社新川 | Method for manufacturing semiconductor device, and bonding apparatus |
| JP2010199142A (en) * | 2009-02-23 | 2010-09-09 | Shinkawa Ltd | Bonding method and bonding device |
| JP4595018B2 (en) * | 2009-02-23 | 2010-12-08 | 株式会社新川 | Semiconductor device manufacturing method and bonding apparatus |
| CN102326241A (en) * | 2009-02-23 | 2012-01-18 | 株式会社新川 | Method for manufacturing semiconductor device, and bonding apparatus |
| US8292160B2 (en) | 2009-02-23 | 2012-10-23 | Shinkawa Ltd. | Method of manufacturing semiconductor device, and bonding apparatus |
| WO2014021141A1 (en) * | 2012-08-03 | 2014-02-06 | 株式会社カイジョー | Bonding device |
| KR20140084181A (en) * | 2012-08-03 | 2014-07-04 | 가부시끼가이샤가이죠 | Bonding device |
| US9339888B2 (en) | 2012-08-03 | 2016-05-17 | Kaijo Corporation | Bonding apparatus |
| CN113539906A (en) * | 2021-07-26 | 2021-10-22 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Bonding head system and bonding machine |
| CN113539906B (en) * | 2021-07-26 | 2024-01-26 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Bonding head system and bonding machine |
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